CN105502333A - Boron nitride-coated carbon nanotube, and preparation method and application thereof - Google Patents
Boron nitride-coated carbon nanotube, and preparation method and application thereof Download PDFInfo
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- CN105502333A CN105502333A CN201510857614.6A CN201510857614A CN105502333A CN 105502333 A CN105502333 A CN 105502333A CN 201510857614 A CN201510857614 A CN 201510857614A CN 105502333 A CN105502333 A CN 105502333A
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- C01B2202/00—Structure or properties of carbon nanotubes
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- C01B2202/22—Electronic properties
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Abstract
The invention relates to a boron nitride-coated carbon nanotube, and a preparation method and application thereof, belonging to the fields of nano-materials and preparation technology. According to the invention, in virtue of film in-situ reaction technology, the outer surface of a carbon nanotube is coated with a boron nitride film with controllable thickness through solution volatilization deposition of boron oxide and chemical gas phase reaction on the premise that the geometric structure of the carbon nanotube is not changed, so the surface properties of the carbon nanotube are not changed; and thus, field emission performance of the carbon nanotube is improved.
Description
Technical field
The present invention relates to coated carbon nanotube of a kind of boron nitride and its production and use, belong to nano material preparation technology and Application Areas.
Background technology
Carbon nanotube by after the Iijima Late Cambrian in NEC company (NEC) laboratory, caused the extensive concern of scientist from 1991 with the performance of its uniqueness, predictedly will cause revolutionary change in a lot of fields.Carbon nanotube physical strength high (its intensity is 100-1000 times of steel), conduction, thermal conductivity are good, there is very large length-to-diameter ratio and minimum tip curvature radius, stable chemical nature, have metallicity and semiconductive concurrently, have lower Turn-on voltage and threshold field strength, therefore it is a kind of desirable field emitting electronic source.But for the commercial applications of carbon nanotube, emission, launch stability and homogeneity aspect are still not ideal enough, therefore finding the method that can improve and improve Field Emission of Carbon Nanotubes is that it moves towards the essential step of industrialization.The surface electronic work function reducing carbon nanotube is one of important channel of improving its field emission performance, and changes the effective means that carbon nano tube surface character is its surperficial work function of reduction.Therefore, how controllably surface modification to be carried out to carbon nanotube and affect the application of this material in Flied emission field.
Mainly contain following two kinds of methods at present to change the electronic structure of carbon nanotube, thus realize the effective change to carbon nano tube surface character.
(1) adsorb: absorption is the local electronic structure that can be changed carbon nanotube by binding molecule or atom, strengthen the localized modes at carbon nanotube tip, or reduce the work function at carbon nanotube tip, strengthen tunneling effect, and then change the field emission performance of carbon nanotube.Such as Water Molecular Adsorption on the carbon nanotubes after, the ionization energy of carbon nanotube reduces, and reduce the difficulty of electron emission, and the formation of water molecule cluster can reduce the ionization energy of carbon nanotube further; Carbon monoxide adsorbs on the carbon nanotubes after, very strong key can be formed with the pentagon carbon atom at carbon nanotube tip, so destroy cutting-edge structure, change its field emission performance.But the shortcoming of this method is that reactive force between adsorptive and carbon nanotube is more weak, under heating and high-voltage easily de-pair, causes the instability of Flied emission.
(2) adulterate: doping changes the most frequently used method of semiconducting electrical conductivity matter.Such as, nitrogen-atoms and boron atom (respectively an electronics more than carbon atom and a few electronics) are the most frequently used N-shaped and P type foreign atom, and they change the electronic structure of carbon nanotube by introducing donor level and acceptor level near Fermi surface.Compared with pure carbon nanotube, the carbon nanotube of N doping can show higher current density and stable transmitter current under lower threshold voltage; Carbon nanotube is by after basic metal (potassium, rubidium, caesium) doping, geometry is almost constant, but the electronic state near Fermi surface obviously changes, metallic carbon nanotubes and semiconductive carbon nano tube cannot be distinguished, field intensity factor increases, thus causing Turn-on voltage to reduce, transmitter current increases, and launches more stable.But this method can only change the Local Electronic Structure of carbon nanotube, and can textural defect be introduced, and the position of accurate controlled doping of having no way and concentration, be not suitable for the application of industry member and popularize.
Therefore, a set of convenient, controlled change carbon nano tube surface character is developed thus the method reducing surperficial work function has actual meaning to this material in the application in Flied emission field.
Summary of the invention
In order to solve problems of the prior art, carbon nanotube that the object of the present invention is to provide a kind of boron nitride coated and its production and use, the present invention utilizes film reaction in－situ technology, by the method for solution evaporation deposited oxide boron and chemical gas phase reaction under the prerequisite not changing carbon nanotube geometry, controllably at the boron nitride pellicle that the coated thickness of carbon nanotube outside surface is controlled, change the surface properties of carbon nanotube, thus realize raising and the improvement of Field Emission of Carbon Nanotubes.
For reaching above-mentioned purpose, the present invention adopts following technical scheme:
The carbon nanotube that boron nitride is coated, it is at the controlled boron nitride pellicle of the coated thickness of carbon nanotube outside surface, the field emission performance>=30.0mA/cm of the carbon nanotube that described boron nitride is coated
2.
Preferably, the field emission performance>=60.0mA/cm of the carbon nanotube that described boron nitride is coated
2; Further preferably,>=92.5mA/cm
2.
Preferably, described boron nitride thickness is 3-50nm.
Preferably, described carbon nanotube is Single Walled Carbon Nanotube, double-walled carbon nano-tube or multi-walled carbon nano-tubes.
Preferably, described carbon nanotube is carbon nano pipe array.
The preparation method of the carbon nanotube that the present invention also provides above-mentioned boron nitride coated, the method comprises the following steps:
(1) boron trioxide is dissolved in the saturated ethanolic soln of obtained boron trioxide in dehydrated alcohol, then above saturated ethanolic soln carbon nanotube being suspended in described boron trioxide, by the volatilization of described solution at the coated boron trioxide film of described carbon nanotube outside surface;
(2) carbon nanotube of the coated boron trioxide of step (1) gained is put into chemical vapour deposition reactor furnace, under the protection of argon gas and hydrogen, be warming up to 600-1200 DEG C, preferably to 900 DEG C; Then under argon shield, react with ammonia, be then down to room temperature (referring generally to 10-30 DEG C), obtain the carbon nanotube that boron nitride is coated.
The preparation method of the carbon nanotube that above-mentioned boron nitride is coated, wherein:
In step (1)
The described temperature preparing the saturated ethanolic soln of boron trioxide is 30-100 DEG C, is preferably 60 DEG C;
Described carbon nanotube is preferably carbon nano pipe array sample;
The volatilizes of described solution is 0.5-5h;
The volatilization mode of described solution is nature volatilization;
Described carbon nanotube, apart from described liquid level of solution 0.1-20cm, is preferably 5-10cm.
Research finds, can control the coated integrity of crystal film and thickness by the change of volatilizes.In order to obtain the completely coated carbon nanotube of boron nitride, the selection of described crystal film thickness is condition premised on the field emission performance that must improve carbon nanotube to greatest extent.
In step (2)
Carry out at ambient pressure;
The flow of described temperature rise period argon gas is 0-1000sccm, is preferably 300sccm;
The flow of described temperature rise period hydrogen is 0-500sccm, is preferably 30sccm;
Described temperature rise rate is 5-50 DEG C/min, is preferably 17 DEG C/min;
The flow of described step of reaction argon gas is 0-1000sccm, is preferably 300sccm;
The flow of described step of reaction ammonia is 0-500sccm, is preferably 30sccm;
The described reaction times is 5-60min, is preferably 15min;
Described rate of temperature fall is 1-50 DEG C/min, is preferably 15 DEG C/min.
Research finds, by temperature of reaction, NH
3flow and reaction times can control the thickness of boron nitride film.In order to obtain the completely coated carbon nanotube of boron nitride, the selection of crystal thickness is condition premised on the field emission performance that must improve carbon nanotube to greatest extent.
The present invention also comprises the coated carbon nanotube of boron nitride obtained as stated above.
Field emission performance>=the 30.0mA/cm of the carbon nanotube that boron nitride of the present invention is coated
2, can up to 92.5mA/cm
2and more than.
The purposes of the carbon nanotube that the present invention also provides above-mentioned boron nitride coated, described purposes comprises for the device based on the principle such as field-electron emission or thermal electron emission.
The present invention utilizes film reaction in－situ technology, by the method for solution evaporation deposited oxide boron and chemical gas phase reaction under the prerequisite not changing carbon nanotube geometry, controllably at the boron nitride pellicle that the coated thickness of carbon nanotube outside surface is controlled, change the surface properties of carbon nanotube, thus realize raising and the improvement of Field Emission of Carbon Nanotubes.
Beneficial effect of the present invention:
(1) the present invention is volatilized and is deposited boron trioxide (B
2o
3) simple and convenient, different sample surfaces structures can be adapted to, and generate that the reaction of boron nitride is spontaneous to be carried out, compared with other evaporation coating methods, the completely coated of carbon nanotube can be realized; (2) the method can realize boron trioxide (B under the prerequisite of not destroying carbon nanometer tube geometry
2o
3) deposition and to the conversion of boron nitride (BN); (3) semi-conductor of to be hexagonal boron nitride or cubic boron nitride be all broad stopband, there is negative surperficial affinity characteristic, the surface properties of carbon nanotube can be changed, reduce the Turn-on voltage of carbon nano tube field-emission, improve the Flied emission current density of carbon nanotube; (4) physicochemical property of boron nitride are stablized, and resistivity is high, good insulating, has the characteristic of not easily adsorbed gas, can avoid the interference of the gas such as water molecules and oxygen molecule, thus increase the stability of Field Emission of Carbon Nanotubes; (5) the method is also applicable to additive method to carry out boron nitride to carbon nanotube coated.
Accompanying drawing explanation
Fig. 1 is preparation method's schematic diagram of the coated carbon nanotube of boron nitride of the present invention;
Wherein, substrate represents the substrate supporting carbon nanotube, and SWCNTsarrays represents carbon nanotube bundles array, and hBN represents hexagonal boron nitride;
Fig. 2 is scanning electron microscope (SEM) figure and the Raman spectrogram of each carbon nanotube of experimental example 1, wherein scheme the SEM that (a) is original carbon nanotubes (not coated boron nitride) and scheme (the little figure in the upper right corner is the SEM of single bunch of carbon nanotube), figure (b) for the little figure in the SEM figure upper right corner after the coated boron trioxide of carbon nanotube outer wall be the SEM of single bunch of carbon nanotube), the little figure in the SEM figure upper right corner that figure (c) is the carbon nanotube of boron nitride coated after chemical gaseous phase depositing process process is the SEM of single bunch of carbon nanotube), figure (d) is original carbon nanotubes (CNTs, not coated boron nitride), (B after the coated boron trioxide of carbon nanotube outer wall
2o
3/ CNTs), the Raman spectrogram of carbon nanotube (hBN/CNTs) after chemical gaseous phase depositing process process,
Fig. 3 be the forward and backward field emission performance of the coated boron nitride of carbon nanotube compare (CNT be boron nitride coated before Field Emission of Carbon Nanotubes, BNcoatedCNT be boron nitride coated after Field Emission of Carbon Nanotubes).
Embodiment
Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Embodiment 1
The carbon nanotube that boron nitride is coated, it is in the controlled boron nitride of the coated a layer thickness of carbon nanotube outside surface, and described boron nitride thickness is 3-5nm, and its field emission performance is 92.5mA/cm
2; Described carbon nanotube is the array-like sample based on double-walled carbon nano-tube.
Embodiment 2
The carbon nanotube that boron nitride is coated, it is in the controlled boron nitride of the coated a layer thickness of carbon nanotube outside surface, and described boron nitride thickness is 8-10nm, and its field emission performance is 60.0mA/cm
2; Described carbon nanotube is based on the array-like sample of 3-5 layer wall thickness.
Embodiment 3
The carbon nanotube that boron nitride is coated, it is in the controlled boron nitride of the coated a layer thickness of carbon nanotube outside surface, and described boron nitride thickness is 20-30nm, and its field emission performance is 30.0mA/cm
2; Described carbon nanotube is the carbon nano pipe array of more than 10 layers of wall thickness.
Embodiment 4
The present embodiment provides the preparation method of the carbon nanotube that boron nitride is coated described in a kind of embodiment 1, comprises the following steps:
(1) 15g boron trioxide is dissolved in the saturated ethanolic soln of obtained boron trioxide in 150mL ethanol solution at 60 DEG C, then, at room temperature, the carbon nano pipe array sample prepared is suspended in superjacent (carbon nano pipe array sample is from liquid level about 5cm), naturally volatilizees the method for (volatilization 3h) at the coated one deck boron trioxide of carbon nanotube outside surface (B by solution
2o
3) film;
(2) just the carbon nanotube-sample of the coated boron trioxide of step (1) gained puts into chemical vapour deposition (CVD) Reaktionsofen; at ambient pressure; under the protection of 300sccm argon gas and 30sccm hydrogen; with the ramp to 900 DEG C of 17 DEG C/min; then under the effect of 300sccm argon gas and 30sccm ammonia; reaction 15mins, is then down to room temperature with the speed of 15 DEG C/min, thus obtains the coated carbon nanotube of boron nitride.
Embodiment 5
The present embodiment provides the preparation method of the carbon nanotube that boron nitride is coated described in a kind of embodiment 2, comprises the following steps:
(1) 15g boron trioxide is dissolved in the saturated ethanolic soln of obtained boron trioxide in 150mL ethanol solution at 60 DEG C, then, at room temperature, the carbon nano pipe array sample prepared is suspended in superjacent (carbon nano pipe array sample is from liquid level about 5cm), naturally volatilizees the method for (volatilization 6h) at the coated one deck boron trioxide of carbon nanotube outside surface (B by solution
2o
3) film;
(2) just the carbon nanotube-sample of the coated boron trioxide of step (1) gained puts into chemical vapour deposition (CVD) Reaktionsofen; at ambient pressure; under the protection of 300sccm argon gas and 30sccm hydrogen; with the ramp to 900 DEG C of 17 DEG C/min; then under the effect of 300sccm argon gas and 30sccm ammonia; reaction 15mins, is then down to room temperature with the speed of 15 DEG C/min, thus obtains the coated carbon nanotube of boron nitride.
Embodiment 6
The present embodiment provides the preparation method of the carbon nanotube that boron nitride is coated described in a kind of embodiment 3, comprises the following steps:
(1) 15g boron trioxide is dissolved in the saturated ethanolic soln of obtained boron trioxide in 150mL ethanol solution at 60 DEG C, then, at room temperature, the carbon nano pipe array sample prepared is suspended in superjacent (carbon nano pipe array sample is from liquid level about 5cm), naturally volatilizees the method for (volatilization 12h) at the coated one deck boron trioxide of carbon nanotube outside surface (B by solution
2o
3) film;
(2) just the carbon nanotube-sample of the coated boron trioxide of step (1) gained puts into chemical vapour deposition (CVD) Reaktionsofen; at ambient pressure; under the protection of 300sccm argon gas and 30sccm hydrogen; with the ramp to 900 DEG C of 17 DEG C/min; then under the effect of 300sccm argon gas and 30sccm ammonia; reaction 15mins, is then down to room temperature with the speed of 15 DEG C/min, thus obtains the coated carbon nanotube of boron nitride.
Experimental example 1
Respectively to original carbon nanotubes (not coated boron nitride), after the coated boron trioxide of outer wall that embodiment 4 is obtained, after carbon nanotube and chemical gaseous phase depositing process process, the carbon nanotube (i.e. embodiment 1) of coated boron nitride carries out related experiment, result as shown in Figure 2:
Wherein:
The SEM that figure (a) is original carbon nanotubes (not coated boron nitride) schemes (the little figure in the upper right corner is the SEM figure of single bunch of carbon nanotube), figure (b) is the SEM figure (the little figure in the upper right corner is the SEM figure of single bunch of carbon nanotube) after the coated boron trioxide of carbon nanotube outer wall, c SEM that () is the carbon nanotube of boron nitride coated after chemical gaseous phase depositing process process schemes (the little figure in the upper right corner is the SEM figure of single bunch of carbon nanotube), and figure (d) is original carbon nanotubes (CNTs), (B after the coated boron trioxide of carbon nanotube outer wall
2o
3/ CNTs), the Raman spectrogram of carbon nanotube (hBN/CNTs, i.e. embodiment 1) after chemical gaseous phase depositing process process.The result of SEM shows that carbon nanotube is evenly coated by boron nitride by carbon nanotube.The result of Raman spectrum shows that the quality of carbon nanotube in whole experimentation does not receive impact.In figure (d), X-coordinate represents Raman shift, and ordinate zou represents the intensity of Raman spectrum.
Experimental example 2
Respectively to original carbon nanotubes (not coated boron nitride), the carbon nanotube of the coated boron nitride of embodiment 1 carries out field emission performance experiment, result is as shown in Fig. 3 (X-coordinate represents the strength of electric field added on the carbon nanotubes, and ordinate zou represents emission).By comparing the field emission performance of carbon nanotube before and after coated boron nitride, after coated boron nitride is described, carbon nano tube field-emission current density improves, and cut-in voltage reduces (field emission performance raising).
Although above the present invention is described in detail with a general description of the specific embodiments, on basis of the present invention, can make some modifications or improvements it, this will be apparent to those skilled in the art.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, all belong to the scope of protection of present invention.
Claims (8)
1. the carbon nanotube that boron nitride is coated, is characterized in that, it is at the controlled boron nitride pellicle of the coated thickness of carbon nanotube outside surface, its field emission performance>=30.0mA/cm
2.
2. carbon nanotube according to claim 1, is characterized in that, its field emission performance>=60.0mA/cm
2; Preferably, its field emission performance>=92.5mA/cm
2.
3. carbon nanotube according to claim 1, is characterized in that, described boron nitride thickness is 3-50nm.
4. the carbon nanotube according to any one of claim 1-3, is characterized in that, described carbon nanotube is Single Walled Carbon Nanotube, double-walled carbon nano-tube or multi-walled carbon nano-tubes; Preferably, described carbon nanotube is carbon nano pipe array.
5. the preparation method of carbon nanotube described in any one of claim 1-4, it is characterized in that, the method comprises the following steps:
(1) boron trioxide is dissolved in the saturated ethanolic soln of obtained boron trioxide in dehydrated alcohol, then above saturated ethanolic soln carbon nanotube being suspended in described boron trioxide, by the volatilization of described solution at the coated boron trioxide film of described carbon nanotube outside surface;
(2) carbon nanotube of the coated boron trioxide of step (1) gained is put into chemical vapour deposition reactor furnace, under the protection of argon gas and hydrogen, be warming up to 600-1200 DEG C, preferably to 900 DEG C; Then under argon shield, react with ammonia, be then down to room temperature, obtain the carbon nanotube that boron nitride is coated.
6. preparation method according to claim 5, is characterized in that, the temperature preparing the saturated ethanolic soln of boron trioxide described in step (1) is 30-100 DEG C, is preferably 60 DEG C;
Preferably, the volatilizes of described solution is 0.5-5h;
Preferably, the volatilization mode of described solution is nature volatilization;
Preferably, described carbon nanotube is apart from described liquid level of solution 0.1-20cm, more preferably 5-10cm.
7. the preparation method according to claim 5 or 6, is characterized in that, described in step (2), the flow of temperature rise period argon gas is 0-1000sccm, is preferably 300sccm;
Preferably, the flow of described temperature rise period hydrogen is 0-500sccm, more preferably 30sccm;
Preferably, described temperature rise rate is 5-50 DEG C/min, more preferably 17 DEG C/min;
Preferably, the flow of described step of reaction argon gas is 0-1000sccm, more preferably 300sccm;
Preferably, the flow of described step of reaction ammonia is 0-500sccm, more preferably 30sccm;
Preferably, the described reaction times is 5-60min, more preferably 15min;
Preferably, described rate of temperature fall is 1-50 DEG C/min, more preferably 15 DEG C/min.
8. the purposes of the carbon nanotube that boron nitride is coated described in any one of claim 1-5, or the purposes of the coated carbon nanotube of the boron nitride that described in any one of claim 6-7 prepared by method, described purposes comprises for the device based on field-electron emission or thermal electron emission principle.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107424887A (en) * | 2017-07-07 | 2017-12-01 | 国家纳米科学中心 | Photic thermionic emission source based on low work function composite nano materials and preparation method thereof |
| CN114212772A (en) * | 2021-11-05 | 2022-03-22 | 中国科学院金属研究所 | Method for preparing single-walled carbon nanotube @ hexagonal boron nitride composite film |
| CN114653371A (en) * | 2022-04-08 | 2022-06-24 | 江西师范大学 | Preparation method of high-defect boron nitride supported atomic-level dispersed metal catalyst |
| CN115703682A (en) * | 2021-08-12 | 2023-02-17 | 湖南碳导新材料科技有限公司 | Preparation method and application of coating electric insulation coating on surface of carbon material powder |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101259960A (en) * | 2008-03-28 | 2008-09-10 | 山东大学 | Method for preparing boron nitride coating carbon nano-tube/nano-wire and boron nitride nano-tube |
| CN103172050A (en) * | 2013-04-16 | 2013-06-26 | 中山大学 | Preparation method of boron nitride-coated carbon nanotubes |
| CN103910345A (en) * | 2014-03-24 | 2014-07-09 | 中国科学院深圳先进技术研究院 | Preparation method of boron nitride composite material |
-
2015
- 2015-11-30 CN CN201510857614.6A patent/CN105502333A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101259960A (en) * | 2008-03-28 | 2008-09-10 | 山东大学 | Method for preparing boron nitride coating carbon nano-tube/nano-wire and boron nitride nano-tube |
| CN103172050A (en) * | 2013-04-16 | 2013-06-26 | 中山大学 | Preparation method of boron nitride-coated carbon nanotubes |
| CN103910345A (en) * | 2014-03-24 | 2014-07-09 | 中国科学院深圳先进技术研究院 | Preparation method of boron nitride composite material |
Non-Patent Citations (1)
| Title |
|---|
| XIAOXIA YANG ET AL.: "Enhanced Field Emission from a Carbon Nanotube Array Coated with a Hexagonal Boron Nitride Thin Film", 《SMALL》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107424887A (en) * | 2017-07-07 | 2017-12-01 | 国家纳米科学中心 | Photic thermionic emission source based on low work function composite nano materials and preparation method thereof |
| CN107424887B (en) * | 2017-07-07 | 2020-07-07 | 国家纳米科学中心 | Photoinduced thermionic emission source based on low-work-function composite nano material and preparation method thereof |
| CN115703682A (en) * | 2021-08-12 | 2023-02-17 | 湖南碳导新材料科技有限公司 | Preparation method and application of coating electric insulation coating on surface of carbon material powder |
| CN115703682B (en) * | 2021-08-12 | 2023-08-22 | 湖南碳导新材料科技有限公司 | Preparation method and application of electric insulation coating on surface of carbon material powder |
| CN114212772A (en) * | 2021-11-05 | 2022-03-22 | 中国科学院金属研究所 | Method for preparing single-walled carbon nanotube @ hexagonal boron nitride composite film |
| CN114653371A (en) * | 2022-04-08 | 2022-06-24 | 江西师范大学 | Preparation method of high-defect boron nitride supported atomic-level dispersed metal catalyst |
| CN114653371B (en) * | 2022-04-08 | 2023-05-05 | 江西师范大学 | Preparation method of atomic-level dispersed metal catalyst supported by high-defect boron nitride |
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