CN105502276B - Method for preparing test electrodes on microparticles - Google Patents

Method for preparing test electrodes on microparticles Download PDF

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Publication number
CN105502276B
CN105502276B CN201610008779.0A CN201610008779A CN105502276B CN 105502276 B CN105502276 B CN 105502276B CN 201610008779 A CN201610008779 A CN 201610008779A CN 105502276 B CN105502276 B CN 105502276B
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microparticle
support substrate
electron beam
focused ion
ion beam
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CN201610008779.0A
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CN105502276A (en
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顾长志
李无瑕
金爱子
李俊杰
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Institute of Physics of CAS
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Institute of Physics of CAS
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment

Abstract

The invention provides a method for preparing test electrodes on microparticles, relating to the field of processing and preparation of novel materials and devices. The method is characterized by preparing the test electrodes on the surfaces of the microparticles by a focused ion beam/electron beam dual-beam system and comprises the following specific steps: selecting a supporting substrate; dispersing and arranging the microparticles on the supporting substrate; fixing the dispersed and arranged microparticles on the supporting substrate; and processing electrode strips on the surfaces of the fixed microparticles, extending the electrode strips onto the supporting substrate and depositing and processing electrode contact blocks on the supporting substrate to achieve preparation of the test electrodes. The method for preparing the test electrodes on the microparticles has the beneficial effects that the test electrodes are prepared on the surfaces of the microparticles by the focused ion beam/electron beam dual-beam system; the method is simple in processing steps and low in difficulty, consumes little time, has higher flexibility and is suitable for some unconventional micro-dimension devices.

Description

A kind of method for preparing test electrode on microparticle
Technical field
The present invention relates to new material and the processing preparation field of device, prepare test on more particularly to a kind of microparticle The method of electrode.
Background technology
With the continuous development of science and technology, many new materials are also constantly succeeded in developing, such as iron-based superconductor.But it is a lot New material mostly typically is monocrystalline, and the area of material is relatively, all tens microns with thickness.It is new for these For material, for probing into the research of its structure and aspect of performance, it is required for being tested, and needs by from base before testing Draw test electrode in bottom material surface.
For or new material in irregular shape small to size and device, according to photoetching of the prior art, gold Category depositing operation or electric plating method carry out electrode machining, and deposit thickness is close to the thickness of base material, is so easily caused Base material cannot not form effectively continuous electrical connection between coplanar.
Accordingly, it would be desirable to a kind of method that can prepare test electrode on microparticle, is unconventional shape or micro-dimension device The physical property research of part and new material provides a kind of simple, flexible, efficient means.
The content of the invention
The invention aims to provide that a kind of processing step is simple, difficulty is low, it is time-consuming less, and with the micro- of high flexibility The method for preparing test electrode on granule.
Especially, the invention provides preparing the method for testing electrode on a kind of microparticle, by focused ion beam/electronics Beam double-beam system prepares test electrode on the surface of microparticle, and concrete steps include:
Step 1, selection support substrate;
Step 2, in the support substrate dispersion arrangement microparticle;
Step 3, will dispersion arrangement after microparticle be fixed in the support substrate;
Step 4, fixed microparticle Surface Machining electrode strip and the electrode strip extended to into the support substrate On, the deposition process electrode contact block in the support substrate, to realize the preparation of the test electrode.
Alternatively, the microparticle in the step 2 is titrated in the support substrate after ultrasonic disperse.
Alternatively, the microparticle in the step 2 is directly placed in the support substrate.
Alternatively, the step 2 is after the microparticle is disperseed, then will dispersion with conductive carbon ribbon, copper strips or elargol The support substrate for having microparticle is fixed on the sample carrier of the focused ion beam/electron beam double-beam system, is put into the focusing On sample stage in the sample room of ion beam/electron beam double-beam system, and the focused ion beam/electron beam double-beam system is taken out Vacuum.
Alternatively, the step 3 be the step 2 disperse microparticle when, directly will be described micro- by insulating polymer Granule is fixed in the support substrate.
Further, in the step 4, the processing of electrode strip is specifically included:Using poly- at the predetermined surface of the microparticle Pyrophosphate ion Shu Jinhang microcells are etched, and to obtain contact hole, the chemical vapor deposition for then being induced using focused ion beam introduces gas State molecular source, grows the electrode strip at the contact hole.
Alternatively, the microparticle in the step 3 passes through focused ion beam or the deposition technique of electron beam-induced exists The microparticle carries out microcell precipitation with the edge of the support substrate contact position, so as to realize the fixation of the microparticle.
Further, the processing of electrode strip described in the step 4 specifically adopts poly- at the predetermined surface of the microparticle The deposition technique of pyrophosphate ion beam or electron beam-induced grows the electrode strip.
Alternatively, the support substrate in the step 1 is from insulation bulk substrates or other with dielectric layer Substrate.
Alternatively, the support substrate and the microparticle can be with the focused ion beam/electron beam double-beam systems Sample stage rotates the arbitrarily angled deposition to realize the electrode strip at the support substrate and the microparticle contact surface.
The method for preparing test electrode on the microparticle of the present invention, can be with by focused ion beam/electron beam double-beam system Test electrode is prepared on the surface of microparticle, it is to avoid the thickness of test electrode is close with the thickness of base material and cannot be formed The problem of effectively continuous electrical connection, processing step is simple, difficulty is low, it is time-consuming less, and with higher motility.The present invention's Method, it is adaptable to some unconventional microsized devices, is new type high temperature superconduction, diamond and graphene particles substrate devices Physical property research with move towards using a kind of effective method of offer and approach.
According to the detailed description below in conjunction with accompanying drawing to the specific embodiment of the invention, those skilled in the art will be brighter The above-mentioned and other purposes of the present invention, advantages and features.
Description of the drawings
Describe some specific embodiments of the present invention hereinafter with reference to the accompanying drawings by way of example, and not by way of limitation in detail. In accompanying drawing, identical reference denotes same or similar part or part.It should be appreciated by those skilled in the art that these What accompanying drawing was not necessarily drawn to scale.In accompanying drawing:
Fig. 1 is the preparation flow figure of the method for preparing test electrode on microparticle according to an embodiment of the invention.
Specific embodiment
Fig. 1 is the preparation flow figure of the method for preparing test electrode on microparticle according to an embodiment of the invention 3.Ginseng See Fig. 1, the present invention prepares test electrode, concrete steps by focused ion beam/electron beam double-beam system on the surface of microparticle 3 Including:
Step S1, selection support substrate 1;
Step S2, in the support substrate dispersion arrangement microparticle;
Step S3, will dispersion arrangement after microparticle be fixed in the support substrate;
Step S4, fixed microparticle Surface Machining electrode strip and the electrode strip extended to into the support substrate On, the deposition process electrode contact block in the support substrate, to realize the preparation of the test electrode.
The method for preparing test electrode on the microparticle 3 of the present invention, by focused ion beam/electron beam double-beam system micro- The surface of granule 3 prepares test electrode, processing step is simple, difficulty is low, it is time-consuming less, and with higher motility.The present invention Method, it is adaptable to some unconventional microsized devices, are new type high temperature superconduction, diamond and graphene particles substrate devices Physical property research with move towards using a kind of effective method of offer and approach.
In step sl, referring to (a) in Fig. 1, choose support substrate 1.The support substrate 1 is from insulation bulk substrates Or other substrates with support substrate 1.When support substrate 1 is from insulation bulk substrates, can first in insulation bulk substrates 1 One layer of dielectric layer 2 of upper deposition.Support substrate 1 is using front needing to carry out washing and drying treatment.
In step s 2, referring to (b) in Fig. 1, disperse the microparticle 3 of arranging in the support substrate 1.It is described micro- The dispersion arrangement of granule 3 can be titrated in the support substrate 1 using ultrasonic disperse.The dispersion arrangement of the microparticle 3 is also Can adopt and be directly placed in the support substrate 1.
After the completion of the dispersion arrangement of the microparticle 3, using conductive carbon ribbon, copper strips or elargol by the support substrate 1 It is fixed on the sample carrier of the focused ion beam/electron beam double-beam system, is put into focused ion beam/electron beam double-beam system On sample stage in sample room, and to the focused ion beam/electron beam double-beam system evacuation, so that the test electrode Preparation carry out in vacuum environment.The preparation process of whole test electrode is completed under vacuum conditions, for sensitive sample, such as The material of water breakthrough and other chemical drugss is unable to, is all extremely advantageous.
In step s3, referring to (c) in Fig. 1, the microparticle 3 is fixed in the support substrate 1.When focus on from After the completion of the evacuation of beamlet/electron beam double-beam system, focused ion beam and electron beam is opened, by electron beam patterning and sample The movement of platform, finding needs the microparticle 3 of processing test electrode.
The fixation of the microparticle 3 can be fixed on the support substrate 1 when microparticle 3 is disperseed using insulating polymer On, insulating polymer is preferably insulating cement.The fixation of the microparticle 3 can also adopt focused ion beam 8 or electron beam-induced Deposition technique, the microparticle 3 with 1 contact position of the support substrate edge pass through electron beam or focused ion beam 8 it is oblique Incident deposit 4 carries out microcell precipitation, so as to realize the fixation of the microparticle 3.
In step s 4, referring to (d) in Fig. 1, the microparticle 3 Surface Machining electrode strip 6 and by the electrode Bar 6 is extended in the support substrate 1, the deposition process electrode contact block 7 in the support substrate 1, to realize the test The preparation of electrode.As the fixation of microparticle 3 in step S3 can have two kinds of fixed solutions, therefore, the processing side in step S4 Case correspondingly also has two kinds.
If scheme one, the microparticle 3 are fixed in the support substrate 1 using insulating polymer, then the electrode The processing of bar 6 is specifically included:Microcell etching is carried out using focused ion beam 8 at the predetermined surface of the microparticle 3, to obtain Contact hole 5, the chemical vapor deposition for then being induced using focused ion beam 8 introduce gaseous molecular source, at the contact hole 5 Grow the electrode strip 6.
If scheme two, microparticle 3 are fixed on described support using the induction and deposition technology of electron beam or focused ion beam 8 and serve as a contrast On bottom 1, then the processing of the electrode strip 6 can specifically continue at the predetermined surface of the microparticle 3 using electron beam or Electrode strip 6 described in the induction and deposition technology direct growth of focused ion beam 8.
After the electrode strip 6 grows, referring to (e) in Fig. 1, the electrode strip 6 is extended to into the support substrate 1 On, the deposition process electrode contact block 7 in the support substrate 1, so that realize the preparation of the test electrode.
Repeat above step, you can to obtain the processing of multiple test electrodes.
Referring to (d) in Fig. 1, the dielectric substrate and the microparticle 3 can be double with the focused ion beam/electron beam The sample stage of beam system rotates arbitrarily angled θ to realize the electrode at the dielectric substrate and 3 contact surface of the microparticle The deposition of bar 6.
In the preparation process of test electrode, sample stage can incline different angles so that processing dimension and positioning are more Plus precisely, the thickness that deposit thickness is far smaller than microparticle 3 is made, so as to define continuous electricity of the microparticle 3 not between coplanar Connection.
The method for preparing test electrode on the microparticle 3 of the present invention can be under the high-resolution of nanoscale, and it is fixed to pinpoint Position complete, yield rate is very high.
So far, although those skilled in the art will appreciate that detailed herein illustrate and describe multiple showing for the present invention Example property embodiment, but, without departing from the spirit and scope of the present invention, still can be direct according to present disclosure It is determined that or deriving many other variations or modifications for meeting the principle of the invention.Therefore, the scope of the present invention is understood that and recognizes It is set to and covers all these other variations or modifications.

Claims (10)

1. a kind of method for preparing test electrode on microparticle, by focused ion beam/electron beam double-beam system in microparticle Surface prepares test electrode, and concrete steps include:
Step 1, selection support substrate;
Step 2, in the support substrate dispersion arrangement microparticle;
Step 3, will dispersion arrangement after microparticle be fixed in the support substrate;
Step 4, fixed microparticle Surface Machining electrode strip and the electrode strip extended in the support substrate, Deposition process electrode contact block in the support substrate, to realize the preparation of the test electrode.
2. method according to claim 1, wherein, the microparticle in the step 2 is titrated after ultrasonic disperse In the support substrate.
3. method according to claim 1, wherein, the microparticle in the step 2 is directly placed at the support On substrate.
4. according to the method in claim 2 or 3, wherein, the step 2 is after the microparticle is disperseed, then with conduction Carbon ribbon, copper strips or elargol the support substrate for being dispersed with microparticle is fixed on into the focused ion beam/electron beam double-beam system Sample carrier on, be put on the sample stage in the sample room of the focused ion beam/electron beam double-beam system, and to the focusing Ion beam/electron beam double-beam system evacuation.
5. the method according to any one of claim 1-3, wherein, the step 3 is to disperse microparticle in the step 2 When, directly the microparticle is fixed in the support substrate by insulating polymer.
6. method according to claim 5, wherein, the processing of electrode strip in the step 4 is specifically included:At described micro- Etched using focused ion Shu Jinhang microcells at the predetermined surface of grain, to obtain contact hole, then induced using focused ion beam Chemical vapor deposition, introduce gaseous molecular source, the growth electrode strip at the contact hole.
7. the method according to any one of claim 1-3, wherein, the microparticle in the step 3 is by focusing on The deposition technique of ion beam or electron beam-induced carries out microcell at the edge of the microparticle with the support substrate contact position and sinks Form sediment, so as to realize the fixation of the microparticle.
8. method according to claim 7, wherein, the processing of electrode strip described in the step 4 is specifically at described micro- Focused ion beam or the deposition technique of electron beam-induced is adopted to grow the electrode strip at the predetermined surface of grain.
9. method according to claim 1, wherein, the support substrate in the step 1 is from insulation bulk substrates Or other substrates with dielectric layer.
10. method according to claim 1, wherein, the support substrate and the microparticle can with it is described focus on from The sample stage of beamlet/electron beam double-beam system rotates arbitrarily angled to realize at the support substrate and the microparticle contact surface The electrode strip deposition.
CN201610008779.0A 2016-01-06 2016-01-06 Method for preparing test electrodes on microparticles Active CN105502276B (en)

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