CN105490646A - 共源共栅放大器及共射共栅放大器 - Google Patents
共源共栅放大器及共射共栅放大器 Download PDFInfo
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- CN105490646A CN105490646A CN201510828763.XA CN201510828763A CN105490646A CN 105490646 A CN105490646 A CN 105490646A CN 201510828763 A CN201510828763 A CN 201510828763A CN 105490646 A CN105490646 A CN 105490646A
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- nmos tube
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- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201510828763.XA CN105490646B (zh) | 2015-11-24 | 2015-11-24 | 共源共栅放大器及共射共栅放大器 |
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CN201510828763.XA CN105490646B (zh) | 2015-11-24 | 2015-11-24 | 共源共栅放大器及共射共栅放大器 |
Publications (2)
Publication Number | Publication Date |
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CN105490646A true CN105490646A (zh) | 2016-04-13 |
CN105490646B CN105490646B (zh) | 2018-04-06 |
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CN201510828763.XA Active CN105490646B (zh) | 2015-11-24 | 2015-11-24 | 共源共栅放大器及共射共栅放大器 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106712729A (zh) * | 2016-12-21 | 2017-05-24 | 锐迪科微电子(上海)有限公司 | 一种高线性度的cmos功率放大器 |
CN109004925A (zh) * | 2017-06-07 | 2018-12-14 | 格芯公司 | 具有后栅极偏置的开关的电路 |
CN109302152A (zh) * | 2017-10-25 | 2019-02-01 | 胡建全 | 一种基于衬底偏置的超低耗电流复用低噪声放大器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101729027A (zh) * | 2009-10-30 | 2010-06-09 | 华南理工大学 | 高增益放大器电路 |
CN102355200A (zh) * | 2011-08-01 | 2012-02-15 | 北京航空航天大学 | 一种单端输入差分输出的并行双频低噪声放大器及设计方法 |
CN102541146A (zh) * | 2010-12-07 | 2012-07-04 | 上海华虹Nec电子有限公司 | 抗高压mos管漏电流增大的带隙基准源的电路 |
US20140320211A1 (en) * | 2011-03-09 | 2014-10-30 | Hittite Microwave Corporation | Distributed amplifier with improved stabilization |
CN104579196A (zh) * | 2015-01-28 | 2015-04-29 | 中国科学院微电子研究所 | 一种射频信号放大器 |
CN104702226A (zh) * | 2015-03-31 | 2015-06-10 | 宜确半导体(苏州)有限公司 | 一种改进的共源共栅射频功率放大器 |
-
2015
- 2015-11-24 CN CN201510828763.XA patent/CN105490646B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101729027A (zh) * | 2009-10-30 | 2010-06-09 | 华南理工大学 | 高增益放大器电路 |
CN102541146A (zh) * | 2010-12-07 | 2012-07-04 | 上海华虹Nec电子有限公司 | 抗高压mos管漏电流增大的带隙基准源的电路 |
US20140320211A1 (en) * | 2011-03-09 | 2014-10-30 | Hittite Microwave Corporation | Distributed amplifier with improved stabilization |
CN102355200A (zh) * | 2011-08-01 | 2012-02-15 | 北京航空航天大学 | 一种单端输入差分输出的并行双频低噪声放大器及设计方法 |
CN104579196A (zh) * | 2015-01-28 | 2015-04-29 | 中国科学院微电子研究所 | 一种射频信号放大器 |
CN104702226A (zh) * | 2015-03-31 | 2015-06-10 | 宜确半导体(苏州)有限公司 | 一种改进的共源共栅射频功率放大器 |
Non-Patent Citations (3)
Title |
---|
DAKE WU ET: "A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
EHSAN KARGARAN ET: "Design of 0.5V, 450μW CMOS LNA Using Current Reuse and Forward Body Bias Technique", 《5TH EUROPEAN CONFERENCE ON CIRCUITS AND SYSTEMS FOR COMMUNICATIONS (ECCSC"10)》 * |
万求真: "低压低功耗CMOS收发机射频前端电路的设计与研究", 《中国博士学位论文全文数据库》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106712729A (zh) * | 2016-12-21 | 2017-05-24 | 锐迪科微电子(上海)有限公司 | 一种高线性度的cmos功率放大器 |
CN106712729B (zh) * | 2016-12-21 | 2020-02-14 | 锐迪科微电子(上海)有限公司 | 一种高线性度的cmos功率放大器 |
CN109004925A (zh) * | 2017-06-07 | 2018-12-14 | 格芯公司 | 具有后栅极偏置的开关的电路 |
CN109004925B (zh) * | 2017-06-07 | 2022-03-15 | 格芯(美国)集成电路科技有限公司 | 具有后栅极偏置的开关的电路 |
CN109302152A (zh) * | 2017-10-25 | 2019-02-01 | 胡建全 | 一种基于衬底偏置的超低耗电流复用低噪声放大器 |
CN109302152B (zh) * | 2017-10-25 | 2023-12-15 | 成都智芯测控科技有限公司 | 一种基于衬底偏置的超低耗电流复用低噪声放大器 |
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Publication number | Publication date |
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CN105490646B (zh) | 2018-04-06 |
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Effective date of registration: 20240122 Address after: Room 403 and 404, No. 8, Yongtai Taixing Road, Yongping Street, Baiyun District, Guangzhou City, Guangdong Province, 510000 Patentee after: Guangzhou Mudi Information Technology Co.,Ltd. Country or region after: China Address before: Room 906, Hexin Business Building, No. 154 Heguang Road, Tianhe District, Guangzhou City, Guangdong Province, 510655 Patentee before: GUANGZHOU YIXIN INFORMATION TECHNOLOGY Co.,Ltd. Country or region before: China |
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