CN105489740A - LED chip structure containing quantum dots - Google Patents
LED chip structure containing quantum dots Download PDFInfo
- Publication number
- CN105489740A CN105489740A CN201510862498.7A CN201510862498A CN105489740A CN 105489740 A CN105489740 A CN 105489740A CN 201510862498 A CN201510862498 A CN 201510862498A CN 105489740 A CN105489740 A CN 105489740A
- Authority
- CN
- China
- Prior art keywords
- layer
- photoresist
- led
- chip structure
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000003086 colorant Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000007779 soft material Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 238000004020 luminiscence type Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses an LED chip structure containing quantum dots. The LED chip structure comprises a substrate, wherein an N type semiconductor layer, a luminous layer and a P type semiconductor layer are arranged on the substrate in sequence to form an LED wafer; the semiconductor layers are provided with metal electrodes respectively; the LED chip structure also comprises a photoresist layer covering the exterior of the LED wafer; the photoresist layer is formed by transparent insulating photoresist through a photoetching process; and quantum dots are uniformly mixed in the photoresist. The photoresist is a soft material, so that the photoresist is more excellent than a hard material SiO2 in the aspects of impact resistance and compression resistance; therefore, the photoresist layer can replace a passivating layer to provide a better protection function; the passivating layer is replaced by the photoresist layer, so that two processes of setting the passivating layer and etching the passivating layer are not required, the production efficiency of the LED luminous chip is improved, and the manufacturing cost is lowered; and the quantum dots are arranged in the photoresist layer, so that light rays from the LED wafer can be adjusted according to the material adopted by the quantum dots, and the LED luminous chips with required various kinds of colors can be obtained.
Description
Technical field
The present invention relates to LED field, be specifically related to a kind of LED chip structure containing quantum dot.
Background technology
LED is the lighting of present extensive use, have that volume is little, brightness is high, power consumption is low, heating less, long service life, the advantage such as environmental protection, and there is various color category, be well received by consumers.Wherein the LED of white light and gold-tinted is mainly used in normal lighting.
The production of LED can be roughly divided into three steps: one is the making of LED luminescence chip, and two is the making of wiring board and the encapsulation of LED luminescence chip, and three is assemblings of LED.In LED, most important parts are LED luminescence chips, the main body of LED luminescence chip is a luminous PN junction, form primarily of N type semiconductor, P type semiconductor and the luminescent layer be clipped between the two, N type semiconductor and P type semiconductor are respectively arranged with metal electrode, and luminous after powered up.The light color that LED luminescence chip sends determines primarily of chip material, as existing LED luminescence chip adopts gallium nitride semiconductor material to make mostly, sends blue light.When adopting blue-ray LED luminescence chip to make other the LED containing quantum dot, need to infiltrate fluorescent material in encapsulation step, after the blue light of the light sent after fluorescent material is stimulated and LED luminescence chip, become the light of other colors.
In addition, existing LED luminescence chip generally covers one deck passivation layer (SiO outward at luminous PN junction
2layer), shield, photoresist layer (being formed by photoresist) is arranged on outside passivation layer.Because existing LED luminescence chip needs to add passivation layer and photoresist layer respectively in manufacturing process, also need the photoresist layer above to metal electrode and passivation layer to etch respectively afterwards, metal electrode is exposed, and operation is loaded down with trivial details, makes trouble, increases cost; Meanwhile, due to SiO
2be hard material, shock resistance, measuring body ability are poor, and passivation layer can not play a protective role very well.
Summary of the invention
For overcoming the deficiencies in the prior art; the object of the present invention is to provide a kind of LED chip structure containing quantum dot; utilize the photoresist of flexible material to replace passivation layer to protect chip body, in photoresist layer, infiltrate quantum dot simultaneously, regulate the light color that LED luminescence chip sends.
The present invention is the technical scheme solving the employing of its technical problem:
A kind of LED chip structure containing quantum dot, comprise substrate, described substrate is disposed with n type semiconductor layer, luminescent layer and p type semiconductor layer, form LED wafer, described n type semiconductor layer and p type semiconductor layer are respectively arranged with metal electrode, also comprise the photoresist layer directly overlayed outside LED wafer, described photoresist layer is formed by photoetching process by the photoresist of transparent insulation, and in described photoresist, Homogeneous phase mixing has quantum dot.
As the further improvement of technique scheme, described quantum dot is one or more in CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, PbS and PbTe.
As the further improvement of technique scheme, described photoresist layer is provided with the breach that metal electrode is exposed.
The invention has the beneficial effects as follows:
The photoresist layer that the present invention adopts the photoresist being impregnated with quantum dot to make covers LED wafer, because photoresist is flexible material, and the SiO of shock resistance, measuring body energy force rate hard material
2more outstanding, therefore photoresist layer can replace passivation layer and better plays a protective role; Photoresist layer replacement passivation layer also reduces and arranges passivation layer and etch passivation layer two procedures, improves the production efficiency of LED luminescence chip, and reduces manufacturing cost; Simultaneously due in photoresist layer with quantum dot, the material that can adopt according to quantum dot regulates the light that LED wafer sends, and obtains required shades of colour LED luminescence chip.
Accompanying drawing explanation
Be described further below in conjunction with accompanying drawing and example.
Fig. 1 is the structural representation of a kind of LED chip containing quantum dot of the present invention.
Embodiment
With reference to Fig. 1; a kind of LED white chip adopting photoresist to make protective layer provided by the invention; comprise substrate 10; described substrate 10 is disposed with from the bottom to top n type semiconductor layer 20, luminescent layer 30 and p type semiconductor layer 40; form LED wafer; wherein n type semiconductor layer 20 is provided with the metal electrode 52 be connected with power cathode, p type semiconductor layer 40 is provided with the metal electrode 51 be connected with positive source.The LED wafer of the present embodiment preferably adopts gallium nitride material to make, and sends blue light after energising excites.
LED wafer is outside equipped with photoresist layer 60, photoresist layer 60 adopts the photoresist being impregnated with quantum dot to be formed by photoetching process, described quantum dot is any one or a few the combination in CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, PbS and PbTe, and uniformly dispersing is in photoresist.Photoresist directly covers LED wafer, and on photoresist layer 60, corresponding two metal electrodes 51,52 are respectively arranged with the breach that metal electrode 51,52 is exposed.
The photoresist layer 60 that the present invention adopts the photoresist being impregnated with quantum dot to make covers LED wafer, because photoresist is flexible material, and the SiO of shock resistance, measuring body energy force rate hard material
2more outstanding, therefore photoresist layer 60 can replace passivation layer and better plays a protective role; Photoresist layer 60 replaces passivation layer and also reduces and arrange passivation layer and etch passivation layer two procedures, improves the production efficiency of LED luminescence chip, and reduces manufacturing cost; Simultaneously because photoresist layer 60 is interior with quantum dot, the material that can adopt according to quantum dot regulates the light that LED wafer sends, and obtains required shades of colour LED luminescence chip.
The above, just preferred embodiment of the present invention, the present invention is not limited to above-mentioned execution mode, as long as it reaches technique effect of the present invention with identical means, all should belong to protection scope of the present invention.
Claims (3)
1. the LED chip structure containing quantum dot, comprise substrate (10), described substrate (10) is disposed with n type semiconductor layer (20), luminescent layer (30) and p type semiconductor layer (40), form LED wafer, described n type semiconductor layer (20) and p type semiconductor layer (40) are respectively arranged with metal electrode (51; 52), it is characterized in that: also comprise the photoresist layer (60) directly overlayed outside LED wafer, described photoresist layer (60) is formed by photoetching process by the photoresist of transparent insulation, and in described photoresist, Homogeneous phase mixing has quantum dot.
2. a kind of LED chip structure containing quantum dot according to claim 1, is characterized in that: described quantum dot is one or more in CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, PbS and PbTe.
3. a kind of LED chip structure containing quantum dot according to claim 2, is characterized in that: described photoresist layer (60) is provided with and makes metal electrode (51; 52) breach exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510862498.7A CN105489740A (en) | 2015-11-30 | 2015-11-30 | LED chip structure containing quantum dots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510862498.7A CN105489740A (en) | 2015-11-30 | 2015-11-30 | LED chip structure containing quantum dots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105489740A true CN105489740A (en) | 2016-04-13 |
Family
ID=55676596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510862498.7A Pending CN105489740A (en) | 2015-11-30 | 2015-11-30 | LED chip structure containing quantum dots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105489740A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812092A (en) * | 2004-12-10 | 2006-08-02 | 安捷伦科技有限公司 | Flash module with quantum dot light conversion |
| US20100078667A1 (en) * | 2008-10-01 | 2010-04-01 | Wei-Kang Cheng | Light-emitting diode |
| CN101894892A (en) * | 2009-05-21 | 2010-11-24 | 沈育浓 | LED wafer package and manufacturing method thereof |
-
2015
- 2015-11-30 CN CN201510862498.7A patent/CN105489740A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812092A (en) * | 2004-12-10 | 2006-08-02 | 安捷伦科技有限公司 | Flash module with quantum dot light conversion |
| US20100078667A1 (en) * | 2008-10-01 | 2010-04-01 | Wei-Kang Cheng | Light-emitting diode |
| CN101894892A (en) * | 2009-05-21 | 2010-11-24 | 沈育浓 | LED wafer package and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160413 |
|
| RJ01 | Rejection of invention patent application after publication |