CN105489716A - Preparation method for flexible LED array based on inorganic semiconductor material - Google Patents
Preparation method for flexible LED array based on inorganic semiconductor material Download PDFInfo
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- CN105489716A CN105489716A CN201610006965.0A CN201610006965A CN105489716A CN 105489716 A CN105489716 A CN 105489716A CN 201610006965 A CN201610006965 A CN 201610006965A CN 105489716 A CN105489716 A CN 105489716A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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Abstract
The invention discloses a preparation method for a flexible LED array based on an inorganic semiconductor material. The preparation method comprises the steps of growing an LED epitaxial wafer with a sacrificial layer on a semiconductor substrate, forming annularly-patterned photoresist mask by photoetching, and etching until reaching the lower contact layer of the LED epitaxial wafer; manufacturing a side passivating layer through a photoetching process; forming a patterned metal pattern, and forming ohmic contact after performing annealing and alloying; etching an annular low table surface and exposing the sacrificial layer; etching the sacrificial layer for a certain length; spin coating a flexible polymer material; etching a polymer material covering an inner ring and the upward side of partial metal electrode to expose partial metal electrode for preparing metal interconnection; performing metal sputtering and patterning processing for preparing LED unit interconnection; spin coating the flexible polymer material; exposing the inner ring sacrificial layer; etching the residual sacrificial layer; peeling off the inorganic LED array coated with the flexible polymer; and completing the preparation for the inorganic LED array.
Description
Technical field
The invention belongs to semiconductor photoelectronic device technology and technical field of nano material, specifically a kind of preparation method of the flexible led array based on inorganic semiconductor material and organic flexible base material.
Background technology
Based on the inorganic integrated device of novel flexible of inorganic semiconductor material and organic flexible base material, be that flexible substrate is combined with traditional inorganic semiconductor technological perfectionism; Compared with conventional organic flexible LED, it has the following advantages, and brightness is high, the life-span is long, stability is high, efficiency is high; Have both flexible advantage; These advantages of inorganic flexible LED make it have a wide range of applications in medical treatment & health and daily life; Comprise: miniature flexible LED can make the health monitor or Image-forming instrument that patient are wrapped as blanket; As the light source of optical dynamic therapy, more can have superiority than laser; The pad of finger that photo-detector that also can be similar to size using it is integrated is fabricated into gloves is as closely sensor glove to carry out operation; Make flexible LED implant, make its successfully implant into body, play the comprehensive function of vital sign monitor, blood tester, imaging center and dispensary; As light source on the medical equipment conduit that LED array can be attached to concentration of glucose in measure venous; In addition utilize flexible led array to prepare the facial mask of laminating human body, eye mask, body film, make photon delicate skin comfortableization, facilitation.
In recent years, along with the fast development of micro-nano technology technology and material science, many flexible device preparation methods arise at the historic moment, and organic flexible LED obtains broad development and application; Although organic flexible LED cost is low, it is simple to make, organic flexible LED luminous efficiency is low, brightness is little, poor stability, life-span are short, in wet condition can be affected by environment.The mobility of inorganic semiconductor material and device operating frequencies, the high several quantity higher than inorganic semiconductor of conductance.Inorganic LED has that energy efficiency is high, the life-span is long and the advantage such as good stability, and preparation inorganic flexible LED avoids the problems referred to above, but dimension is received process technology and had higher requirement, preparation technology's relative complex.
Summary of the invention
The object of the invention is to the preparation method proposing a kind of inorganic flexible LED array, namely to punch corrosion sacrificial layer method: inorganic flexible LED array prepared by the present invention, have that efficiency is high, brightness is high, the life-span is long, good stability, the structurally ordered advantage such as controlled, reproducible.
The present invention proposes a kind of preparation method of the flexible led array based on inorganic semiconductor material, comprises the steps:
Step 1: use growth technology, growth has the LED of sacrifice layer on a semiconductor substrate;
Step 2: cleaning LED, photoetching forms the photoresist mask of ring-shaped figure, etches annular LED unit upper table surface;
Step 3: utilize lithographic etch process to make side passivation layer at described annular LED unit upper table surface;
Step 4: metal patternization, forms ohmic contact after annealed alloy;
Step 5: photoetching forms photoresist mask, etches annular following table, exposes sacrifice layer, complete the preparation of inorganic LED unit;
Step 6: photoetching forms photoresist mask, exposes the sacrifice layer around following table, corrosion sacrificial layer to undercutting certain length in following table;
Step 7: spin coating flexible polymeric materials, and heat-treated described inorganic LED unit covering;
Step 8: photo etched mask, the described flexible polymeric materials etching in described upper table surface inner ring and cover above part metals electrode, exposes part metals electrode to prepare metal interconnected contact;
Step 9: metal sputtering also carries out graphical treatment to prepare the interconnect metallization lines between LED unit array;
Step 10: spin coating flexible polymeric materials, for covering described interconnect metallization lines, and heat-treats, and the flexible polymeric materials forming described interconnect metallization lines is coated up and down;
Step 11: the flexible polymeric materials in chemical wet etching upper table surface inner ring, exposes the sacrifice layer in described upper table surface inner ring;
Step 12: corrode remaining sacrifice layer;
Step 13: peel off the inorganic LED unit array of transfer printing, complete the preparation of inorganic flexible LED unit array.
The preparation method of this flexible led array based on inorganic semiconductor material provided by the invention, compared with the micro-support of photoresist bridge of routine, the micro-method for supporting of sidewall, the advantage such as there is simple to operate, structural area controlled, reproducible and stability be high greatly, in order.
Accompanying drawing explanation
For illustrating content of the present invention and advantage further, below in conjunction with accompanying drawing and example in detail as rear, wherein:
The infrared LED epitaxy junction composition described in preparation method of the flexible led array based on inorganic semiconductor material that Fig. 1 proposes for the present invention.
Fig. 2 is the described LED function cellular construction figure of the preparation method of the flexible led array based on inorganic semiconductor material that the present invention proposes.
LED component sectional view after the step 6 undercutting sacrifice layer described in preparation method of the flexible led array based on inorganic semiconductor material that Fig. 3 proposes for the present invention.
Fig. 4 is that the described step 11 of the preparation method of the flexible led array based on inorganic semiconductor material that the present invention proposes processes rear LED component sectional view.
Fig. 5 is that the described step 12 of the preparation method of the flexible led array based on inorganic semiconductor material that the present invention proposes processes rear LED component sectional view.
Fig. 6 is the described transfer process schematic diagram of the preparation method of the flexible led array based on inorganic semiconductor material that the present invention proposes.
Fig. 7 is that interconnected LED is transferred to the flexible seal of flexible substrates 11 by the described of the preparation method of the flexible led array based on inorganic semiconductor material that the present invention proposes.
In figure: 1 is P contact layer, 2 is the LED epitaxial loayer removing P, N contact layer, and 3 is N contact layer, and 4 is sacrifice layer, 5 is substrate, and 6 is P electrode, and 7 is passivation layer, and 8 is N electrode, 9 is interconnecting metal, and 10 is flexible polymeric materials polyimides, and 11 is flexible transfer seal or flexible transfer substrate.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The present invention proposes a kind of preparation method of inorganic flexible LED array, namely uses growth technology, and growth has the LED of sacrifice layer on a semiconductor substrate; Cleaning LED, photoetching forms the photoresist mask of ring-shaped figure, is etched to contact layer under LED; Lithographic etch process makes side passivation layer, effectively reduces the side leakage current because lateral oxidation layer causes; Adopt ultrasonic stripping means or corrosion of metals method to form patterned metallic pattern, after annealed alloy, form ohmic contact; Photoetching forms photoresist mask, etches ring-like following table, exposes sacrifice layer, completes the preparation of inorganic LED unit; Photoetching forms photoresist mask, only exposes sacrifice layer around following table, corrosion sacrificial layer undercutting certain length; A kind of special flexible polymeric materials of spin coating, and heat-treated LED unit covering; Photo etched mask, etches the polymeric material covered above inner ring and part metals electrode, exposes part metals electrode metal interconnected to prepare; Metal sputtering also carries out graphical treatment to prepare LED unit interconnected; Spin coating flexible polymeric materials, and heat-treat; Chemical wet etching inner ring polymeric material, exposes inner ring sacrifice layer; Corrode remaining sacrifice layer; Peel off the inorganic LED array of flexible polymer parcel, complete the preparation of inorganic flexible LED array.
The preparation method that the present invention gives prominence to based on the flexible led array of inorganic semiconductor material is as follows:
Step 1: use growth technology, growth has the LED of sacrifice layer on a semiconductor substrate;
Step 2: cleaning LED, photoetching forms the photoresist mask of ring-shaped figure, etches annular LED unit upper table surface;
Step 3: lithographic etch process makes side passivation layer, reduces the side leakage current because lateral oxidation layer causes;
Step 4: metal patternization, forms ohmic contact after annealed alloy;
Step 5: photoetching forms photoresist mask, etches annular following table, exposes sacrifice layer, completes the preparation of inorganic LED unit;
Step 6: photoetching forms photoresist mask, exposes sacrifice layer around following table, corrosion sacrificial layer undercutting certain length;
Step 7: a kind of flexible polymeric materials of spin coating, and heat-treated cellular construction covering;
Step 8: photo etched mask, etches the polymeric material covered above inner ring and part metals electrode, exposes part metals electrode to prepare metal interconnected contact;
Step 9: metal sputtering also carries out graphical treatment to prepare LED unit interconnected;
Step 10: spin coating flexible polymeric materials, and heat-treat;
Step 11: chemical wet etching inner ring polymeric material, exposes inner ring sacrifice layer;
Step 12: corrode remaining sacrifice layer;
Step 13: the inorganic LED array peeling off flexible polymer parcel, completes the preparation of inorganic flexible LED array.
Refer to shown in Fig. 1-Fig. 7, describe the preparation method of the flexible led array based on inorganic semiconductor material that the present invention proposes below by specific embodiment, comprise the steps:
Step 1: use growth technology, growth has the LED of sacrifice layer on a semiconductor substrate; For GaAs substrate 5, use metal organic vapor growth apparatus epitaxial sacrificial layer AlAs4, N-type contact layer Al0.1Ga0.9As3, N-type limiting layer Al0.3Ga0.7As, active area GaAs, P limiting layer Al0.3Ga0.7As, current extending Al0.1Ga0.9As, P type contact layer Al0.1Ga0.9As1 successively; As shown in Figure 1, Reference numeral 2 represents the epitaxial loayer comprising N-type limiting layer Al0.1Ga0.9As, active area GaAs, P limiting layer Al0.3Ga0.1As, current extending Al0.1Ga0.9As, in follow-up processing procedure, the process for this epitaxial loayer is consistent; Wherein N contact layer, P contact layer are heavy doping, and N-type limiting layer and P type limiting layer are light dope, active area background doped;
Step 2: by the epitaxially grown LED with sacrifice layer 4, is placed in acetone and ultrasonic 5 minutes of absolute ethyl alcohol (temperature 55 DEG C); Use deionized water rinsing again 20 times; Nitrogen dries up, and completes the cleaning of GaAs epitaxial wafer; Adopt photoetching technique, through spin coating photoresist, front baking, exposure, after dry, development, form annular patterned photoresist mask at GaAs epitaxial wafer, annulus inner ring radius is 10 microns, and outer shroud radius is 80 microns; ICP is adopted to be etched to N contact layer 3 upper surface; Complete cleaning photoetching glue;
Step 3: growth 300nm silicon dioxide, and form photoresist mask by photoetching, RIE etching silicon dioxide, prepares silicon dioxide side and surface passivation layer 7; Be placed in acetone and ultrasonic 5 minutes of absolute ethyl alcohol (temperature 55 DEG C); Use deionized water rinsing again 20 times; Nitrogen dries up, and completes cleaning photoetching glue;
Step 4: adopt negative photoresist, such as, AZ5214 is carried out general bursting into as negative photoresist carries out photoetching, epitaxial wafer is prepared the figure of the anti-version of electrode pattern; Splash-proofing sputtering metal gold germanium nickel 30nm, golden 100nm; Acetone soaks 30 minutes, uses the supersonic cleaning machine that power is 40w to carry out ultrasonic stripping, 30 seconds time, until gold is peeled off completely, obtains intact metal electrode figure; Described metal electrode comprises P electrode 6 and N electrode 8, and P electrode 6 is positioned on described LED upper table surface, and N electrode 8 is positioned at N contact layer 3 upper surface etching near upper table surface and expose; For annular table top, adopt the electrode structure of annular, meet LED scientific design, be beneficial to the recombination luminescence that LED is relatively uniform; Design P electrode 6 is annular electrode structure, and inner ring radius is 35 microns, and outer shroud radius is 45 microns, and N electrode 8 also adopts annular electrode structure, and inner ring radius is 100 microns, and outer shroud radius is 110 microns; Complete ultrasonic stripping, be placed in acetone and ultrasonic 3 minutes of absolute ethyl alcohol successively; With deionized water rinsing 20 times cleanings; Use quick anneal oven to carry out being warming up to 170 DEG C in 20 seconds, keep 20 seconds, within 10 seconds, be warming up to 335 DEG C and keep 5 seconds, within 10 seconds, rise to 450 DEG C, keep 60 seconds, 60 second time dropped to 100 DEG C, removed LED unit sheet after 100 DEG C; Complete annealed alloy, form ohmic contact;
Step 5: photoetching forms photoresist mask, and mask pattern is annular, wherein annulus outer shroud, and annulus inner ring radius is 7.5 microns, is slightly less than upper table surface inner ring radius, and outer shroud radius is 120 microns, N electrode 8 is included; Configuration corrosive liquid citrate buffer solution: H2O2=5: 1; This corrosive liquid can corrode GaAs, Al0.1Ga0.9As, can not corrode AlAs material; Use above-mentioned configured corrosive liquid corrosion N contact layer Al0.1Ga0.9As2 to AlAs sacrifice layer 4, etch annular following table, carry out routine cleaning; Remove remaining photoresist; Complete the preparation of inorganic LED unit, Fig. 2 is the LED unit structural section figure with annular upper table surface, annular following table, P electrode 6, N electrode 8 prepared;
Step 6: photoetching forms photoresist mask, the AlAs sacrifice layer 4 only around exposure unit; It is 120 microns that exposure AlAs sacrifice layer 4 forms inner ring radius, and outer shroud radius is the region of 140 microns; Adopt 10%HF acid corrosion AlAs sacrifice layer 4, AlAs sacrifice layer 4 fast erosion of exposure falls, we control corrosion rate time, makes its inside undercutting degree of depth account for 15 microns of LED unit; Reference etching time 1.5 minutes; Cleaning photoetching glue afterwards; The device sectional view obtained as shown in Figure 3; Inside undercutting AlAs sacrifice layer 4, being the flexible polymer parcel LED unit in order to form " work " font, preventing LED unit in subsequent processes cracked.
Step 7; Regulate sol evenning machine rotating speed 3000r minute, rotational time 30 seconds, spin-on polyimide flexible polymeric materials, hot plate be heat-treat 80 DEG C baking 10 minutes, rise to 140 DEG C of bakings 30 minutes, the polyimide film of about 3 micron thickness can be formed on above-mentioned LED epitaxial chip, cover the LED epitaxial chip with mesa structure uniformly, complete LED unit structural flexibility polyimides and cover;
Step 8: form photoresist mask by photoetching, because the polyimide film of non-imidization is dissolved in alkaline solution, AZ3038 is conventional weak caustic solution, takes convenient and safe, and it is good that corrosion rate stablizes controllability; Use the polyimides that AZ3038 alkalescence photoresist developing liquid etching is not covered by photoresist, until the polyimides exposed dissolves completely, we by this method, dissolve the polyimides in the polyimides at partial electrode place and upper table surface inner ring, dissolve the polyimides at partial electrode place, in order to expose portion metal electrode, in order to interconnecting metal during lower step making metal interconnected 9 directly can touch metal electrode; The polyimides dissolved in upper table surface inner ring is because prevent this part polyimides in step 10, due to spin-on polyimide again and heat treatment, be equivalent to the secondary heat treatment of polyimides, after polyimides aftertreatment herein, little in AZ3038 alkalescence photoresist developing liquid dissolution velocity, be unfavorable for the sacrifice layer at our subsequent etching inner ring place; 30 seconds reference times; Chip is placed on hot plate or baking oven, 250 DEG C are heated 1.5 hours, make polyimides imidization, and the polyimides after imidization cannot dissolve in AZ3038 alkalescence photoresist developing liquid, having the advantages that corrosion-resistant resistance is high, in follow-up technical process, performance sex change occurring without the need to worrying.
Step 9: metal sputtering 400nmAu, forms photoresist mask by photoetching, adopts the Au that the corrosion of Au corrosive liquid exposes, preparation LED unit interconnection line 9; Cleaning photoetching glue;
Step 10: spin-on polyimide 10 flexible polymeric materials on the chip having prepared metal interconnecting wires 9, rotating speed 3000 turns minute, 30 seconds time; Hot plate is heat-treated, temperature 80 DEG C, toast 10 minutes, be then warming up to 140 DEG C, toast 30 minutes, complete the covering to Au interconnection; Define the interconnecting metal that polyimides is coated up and down, this is formed for the metal interconnected lead-in wire 9 after our flexibility and firmly protects, and prevents it from rupturing in Bending Deformation process; The device sectional view formed after the interconnecting metal that polyimides about 10 is coated as shown in Figure 4.
Step 11: photoetching forms photoresist mask, the polyimides 10 only in exposure upper table surface inner ring and the positive and negative electrode of LED unit interconnection; Expose LED unit interconnection positive and negative electrode be in order to device prepared after can carry out external powering up smoothly, make it normally work; Use the polyimides 10 that AZ3038 alkalescence photoresist developing liquid etching is not covered by photoresist, expose AlAs sacrifice layer 4 in upper table surface inner ring; In lower step process, AlAs sacrifice layer 4 could be corroded smoothly like this, between LED component with GaAs substrate 5, only rely on flexible polyimide 10 to be connected.
Step 12: adopt 10%HF acid solution corrosion AlAs sacrifice layer, all remaining AlAs sacrifice layers of erosion removal, reference etching time 15 minutes; Fig. 5 is the device sectional view formed after the remaining sacrifice layer of corrosion, the LED array of the micro-support of flexible polyimide 10 on substrate, LED array does not directly contact with substrate, forms micro-contact by polyimide film and the substrate wrapped up around LED unit, and in transfer process, the contact of this layer is ruptured.
Step 13: pass through transfer technique, adopt flexible seal 11, be transferred in flexible substrates 11 on film by the LED array that polyimides wraps up from GaAs substrate 5, Fig. 6 is transfer process schematic diagram, Fig. 7 is after LED array is transferred to the flexible seal of flexible substrates 11, the flexible LED schematic diagram of formation; Flexible seal and flexible base are generally same material, and as dimethyl silicone polymer (PDMS), obtained through different process, we all adopt 11 marks.So far, the preparation of inorganic flexible LED array is completed.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1., based on a preparation method for the flexible led array of inorganic semiconductor material, comprise the steps:
Step 1: use growth technology, growth has the LED of sacrifice layer on a semiconductor substrate;
Step 2: cleaning LED, photoetching forms the photoresist mask of ring-shaped figure, etches annular LED unit upper table surface;
Step 3: utilize lithographic etch process to make side passivation layer at described annular LED unit upper table surface;
Step 4: metal patternization, forms ohmic contact after annealed alloy;
Step 5: photoetching forms photoresist mask, etches annular following table, exposes sacrifice layer, complete the preparation of inorganic LED unit;
Step 6: photoetching forms photoresist mask, exposes the sacrifice layer around following table, corrosion sacrificial layer to undercutting certain length in following table;
Step 7: spin coating flexible polymeric materials, and heat-treated described inorganic LED unit covering;
Step 8: photo etched mask, the described flexible polymeric materials etching in described upper table surface inner ring and cover above part metals electrode, exposes part metals electrode to prepare metal interconnected contact;
Step 9: metal sputtering also carries out graphical treatment to prepare the interconnect metallization lines between LED unit array;
Step 10: spin coating flexible polymeric materials, for covering described interconnect metallization lines, and heat-treats, and the flexible polymeric materials forming described interconnect metallization lines is coated up and down;
Step 11: the flexible polymeric materials in chemical wet etching upper table surface inner ring, exposes the sacrifice layer in described upper table surface inner ring;
Step 12: corrode remaining sacrifice layer;
Step 13: peel off the inorganic LED unit array of transfer printing, complete the preparation of inorganic flexible LED unit array.
2., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, wherein said inorganic semiconductor material comprises GaAs, AlGaAs, AlGaInP, GaP, InP or GaSb.
3., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, wherein, described epitaxial wafer is P contact layer, P current extending, P limiting layer, active area, N limiting layer, N contact layer, sacrifice layer from top to bottom.
4. as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, wherein, described upper table surface ring-shaped figure can be the annular that circle, square, pentagon, hexagon or square outer shroud and circular inner form.
5., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, wherein, the outer shroud of described following table ring-shaped figure is greater than upper table surface outer shroud, and inner ring is less than upper table surface inner ring.
6., as claimed in claim 1 based on the preparation method of the type flexible led array of inorganic semiconductor material, the lithographic method of wherein said upper table surface, following table, flexible polymer adopts Ar ion etching, reactive ion etching, plasma etching or wet etching.
7., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, be wherein etched to sacrificial layer surface when making described following table.
8., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, wherein said refers to undercutting 20 microns to 80 microns to the sacrifice layer of undercutting certain length in following table.
9., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, the corrosion of wherein said sacrifice layer is by selecting different corrosive liquid proportionings, corrosion temperature and time control corrosion rate speed and the undercutting degree of depth.
10., as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, wherein said flexible polymeric materials has the characteristic of resistant to acetone and anti-interconnecting metal corrosive liquid.
11. as claimed in claim 1 based on the preparation method of the flexible led array of inorganic semiconductor material, and wherein said interconnect metallization lines adopts metal material or the multiple layer metal material with described flexible polymeric materials with adhesion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610006965.0A CN105489716B (en) | 2016-01-05 | 2016-01-05 | The preparation method of flexible led array based on inorganic semiconductor material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610006965.0A CN105489716B (en) | 2016-01-05 | 2016-01-05 | The preparation method of flexible led array based on inorganic semiconductor material |
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| CN105489716A true CN105489716A (en) | 2016-04-13 |
| CN105489716B CN105489716B (en) | 2017-10-13 |
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| CN201610006965.0A Active CN105489716B (en) | 2016-01-05 | 2016-01-05 | The preparation method of flexible led array based on inorganic semiconductor material |
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| CN107634130A (en) * | 2017-09-01 | 2018-01-26 | 哈尔滨工业大学 | A kind of flexible electronic device for stablizing temperature control using μ LED |
| CN108815714A (en) * | 2018-04-16 | 2018-11-16 | 中国科学院半导体研究所 | Extending photoelectricity acupuncture device flexible of one kind and preparation method thereof |
| CN112002999A (en) * | 2020-08-03 | 2020-11-27 | 首都师范大学 | Simple manufacturing method of THz antenna |
| CN115320271A (en) * | 2022-08-04 | 2022-11-11 | 中国科学院上海微***与信息技术研究所 | Transfer printing method of semiconductor film |
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| CN105609589A (en) * | 2016-01-29 | 2016-05-25 | 中国科学院半导体研究所 | Preparation method of inorganic semiconductor thin-film function unit suitable for transferring |
| CN105609589B (en) * | 2016-01-29 | 2017-11-03 | 中国科学院半导体研究所 | Suitable for the preparation method of the inorganic semiconductor film functional unit of transfer |
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| CN112002999A (en) * | 2020-08-03 | 2020-11-27 | 首都师范大学 | Simple manufacturing method of THz antenna |
| CN115320271A (en) * | 2022-08-04 | 2022-11-11 | 中国科学院上海微***与信息技术研究所 | Transfer printing method of semiconductor film |
| CN115320271B (en) * | 2022-08-04 | 2023-06-16 | 中国科学院上海微***与信息技术研究所 | Transfer printing method of semiconductor film |
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