CN105489674B - 具有防止补偿掺杂的太阳能电池的制造 - Google Patents

具有防止补偿掺杂的太阳能电池的制造 Download PDF

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CN105489674B
CN105489674B CN201610090150.5A CN201610090150A CN105489674B CN 105489674 B CN105489674 B CN 105489674B CN 201610090150 A CN201610090150 A CN 201610090150A CN 105489674 B CN105489674 B CN 105489674B
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蒂莫西·D·丹尼斯
李波
彼得·约翰·卡曾斯
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Abstract

一种太阳能电池制造工艺，包括在太阳能电池衬底的背面上的多晶硅层(104)上印刷掺杂物源(105、106)。对掺杂物源(105、106)进行固化，以将来自掺杂物源(105、106)的掺杂物扩散至多晶硅层(104)中，从而形成扩散区(107、108)，并对掺杂物源(105、106)进行交联，以使它们对后面执行的纹理化工艺具有抵抗性。为了防止补偿掺杂，阻止来自掺杂物源(105、106)之一的掺杂物释放气体并扩散到其它掺杂物源中。例如，来自N型掺杂物源(106)的磷被阻止扩散到包括硼的P型掺杂物源(105)中。

Description

具有防止补偿掺杂的太阳能电池的制造
本申请是基于申请日为2011年04月22日、申请号为201180032257.X(国际申请号为PCT/US2011/033613)、发明创造名称为“具有防止补偿掺杂的太阳能电池的制造”的中国专利申请的分案申请。
与联邦政府资助的研究或开发相关的声明
本公开是在政府支持下按照美国能源部授予的第DEFC36-07GO17043号合同进行。
发明背景
1.技术领域
本发明整体涉及太阳能电池，特别是但不排他地涉及太阳能电池制造工艺和结构。
2.背景技术
太阳能电池是熟知的用于将太阳辐射转换成电能的装置。它们可以在半导体晶片上用半导体加工技术制造而成。太阳能电池括P型和N型扩散区。投射在太阳能电池上的太阳辐射产生迁移至扩散区的电子和空穴，从而在扩散区之间形成电压差。在背接触太阳能电池中，扩散区和与它们相连的金属触指均位于太阳能电池的背面上。金属触指允许将外部电路连接到太阳能电池上并由太阳能电池提供电力。
效率是太阳能电池的一个重要性能，因为这直接关系到太阳能电池的发电能力。相应的，用于改进太阳能电池效率的技术是广泛期望的。此外，还期望降低制造太阳能电池的成本，从而使它们相对其它能源具有竞争力。
发明内容
在一个实施例中，一种太阳能电池制造工艺包括在太阳能电池衬底的背面上的多晶硅层上印刷掺杂物源。对掺杂物源进行固化，以将来自掺杂物源的掺杂物扩散至多晶硅层中，从而形成扩散区，并对掺杂物源进行交联，以使它们对后面执行的纹理化工艺具有抵抗性。为了防止补偿掺杂(counterdoping)，阻止来自其中一个掺杂物源的掺杂物释放气体并扩散到其它掺杂物源中。例如，来自N型掺杂物源的磷被阻止扩散到包括硼的P型掺杂物源中。
本领域的普通技术人员在阅读包括附图和权利要求书的本公开全文之后，本发明的这些和其他特征对于他们而言将是显而易见的。
附图说明
图1-图5展示了多个截面图，其示意性地示出了根据本发明的一个实施例的太阳能电池的制造。
图6示意性地展示了根据本发明的一个实施例的防止补偿掺杂的腔室的净化。
图7和图8展示了多个截面图，其示意性地示出了根据本发明的一个实施例的几个选择性的处理步骤，其中包括在掺杂物源上形成覆盖层。
不同附图中的相同的参考标号表示相同或相似的组件。
具体实施方式
在本公开中，提供了很多具体说明，如装置、工艺参数、材料、处理步骤、结构，以对本发明的各个实施例提供透彻的了解。但是，领域内的技术人员将会认识到，可在没有这些具体细节中的一个或多个的情况下实践本发明。在其他实例下，没有示出或描述已知细节以免混淆本发明的各方面。
图1-图5展示了多个截面图，其示意性地示出了根据本发明的一个实施例的太阳能电池的制造。在图1-图5以及图7、图8的实例中，所制造的太阳能电池是背接触太阳能电池，其中太阳能电池的P型和N型扩散区以及相应的金属触指形成于太阳能电池衬底的背面上。
图1-5示意性地示出了一个流程，其包括下面的处理步骤：
a)损伤蚀刻步骤
b)多晶硅淀积
c)印刷掺杂物源
d)固化步骤段
e)沟槽形成
f)纹理化步骤
在该实例中，以所展示的顺序执行上面所述处理步骤。需要注意的是，为了清晰，省去了其它对于本发明的理解不是必须的处理步骤。例如，其它处理步骤，如为P型和N型扩散区构造金属触点，其位于纹理化工艺后，用于完成太阳能电池的制造。
图1展示了太阳能电池衬底101，其具有背面102和正面103。在正常工作期间，正面103朝向太阳，用于采集太阳辐射。背面102与正面103相对。准备衬底101用于在损伤蚀刻过程中处理成为太阳能电池。在该实例中，衬底101包括N型硅晶片，由于晶片供应商所使用的锯割过程是从衬底101的硅锭对其进行切割的，因而通常得到的硅晶片的表面是损伤的。如从供应商所得到的，衬底101的厚度可以是大约100至200微米。在一个实施例中，损伤蚀刻步骤包括利用包括氢氧化钾的湿蚀刻工艺，从衬底101的每侧去除大约10至20微米。损伤蚀刻步骤还可包括清洗衬底101，从而去除金属污染。在衬底101的正面和背面形成介电薄层(未标示)。该介电薄层包括在衬底101的两面都热生长厚度小于或等于20埃(例如，16埃)的二氧化硅。衬底101的正表面及形成于其上面的材料也被称为位于太阳能电池的正面上，因为在正常工作期间，它们朝向太阳，用于接收太阳辐射。同样，衬底101的背表面及形成于其上面的材料也被称为位于太阳能电池的与正面相对的背面上。
在图2中，多晶硅层104形成于衬底101的背面102上的介电薄层上。通过低压化学汽相淀积，在制造过程的该阶段无掺杂物的多晶硅层104的厚度可被制作为大约2200埃。
在图3中，将掺杂物源105和106印刷在多晶硅层104上。在下文可更加清晰地显现的是，掺杂物源105和106提供掺杂物，用于在太阳能电池背面上的多晶硅层104中形成扩散区。掺杂物源105和106可用于形成任何已知的太阳能电池，但是图3中只展示了其中的一个，以进行清晰的图示。
包括可印刷印料的掺杂物源105和106具有不同的导电类型。在图3的实例中，掺杂物源105是P型掺杂物源，而掺杂物源106是N型掺杂物源。通过印刷，如喷墨印刷或丝网印刷，掺杂物源105和106形成于多晶硅层104上。喷墨印刷有利于允许喷墨印刷喷嘴在衬底101上一次就能够同时印刷掺杂物源105和106。也可在独立的过程中分别印刷掺杂物源105和106，这取决于工艺。
在图4中，执行固化步骤，从而交联掺杂物源105、交联掺杂物源106、将掺杂物源105的掺杂物扩散到多晶硅层104中以在多晶硅层104中形成P型扩散区107、将掺杂物源106的掺杂物扩散到多晶硅层104中以在多晶硅层104中形成N型扩散区108。由于在多晶硅层104上具有多个掺杂物源105和106，因此在多晶硅层104中具有多个P型扩散区107和N型扩散区108。交联掺杂物源105和交联掺杂物源106使得掺杂物源105和106更耐久和坚韧，以承受随后的执行于太阳能电池的沟槽和正面上的纹理化步骤(参见图5)。交联和扩散执行于同一固化步骤中以减少工艺步骤的数量，从而降低太阳能电池的制造成本。固化步骤可在600℃至1100℃之间的温度范围内(例如，950℃)执行大约30分钟。
为了改善太阳能电池的性能，执行固化步骤时使得来自掺杂物源106的N型掺杂物至P型掺杂物源105的扩散被阻止或最小化。发明人进行的研究指出，在固化步骤，来自掺杂物源106的N型掺杂物可补偿掺杂掺杂物源105中的P型掺杂物。发明人发现，补偿掺杂源于N型掺杂物(在该实例中包括磷)排出气体进入P型掺杂物(在该实例中包括硼)。在某些情况下，P型掺杂物源105中产生的磷的浓度大于硼的浓度。发明人还发现，来自掺杂物源106的N型掺杂物可掺杂P型扩散区107与N型扩散区108之间的区域(在图4中标记为112)。补偿掺杂，即来自掺杂物源106的N型掺杂物扩散至P型掺杂物源105中，由于降低了太阳能电池衬底101的寿命并降低太阳能电池的效率，从而降低了太阳能电池的性能。在固化步骤，来自P型掺杂物源105的P型掺杂物也扩散至N型掺杂物源106中。但是，发明人进行的研究指出，这种扩散对太阳能电池的性能的影响不会像N型掺杂物源106的N型掺杂物扩散至P型掺杂物源105中对太阳能电池的性能的影响那么大。具有防止补偿掺杂的固化步骤的执行有利于解决发明人所指出的问题。
在图5中，沟槽115形成于多晶硅层104中。随机地纹理化衬底101的正表面以形成纹理化表面109。纹理化工艺还可随机地纹理化沟槽115。在一个实施例中，利用包括氢氧化钾和异丙醇的湿蚀刻工艺，对衬底101的正表面和沟槽115进行纹理化以使其具有随机的棱锥体。纹理化表面109有助于增加太阳辐射的采集。蚀刻工艺中使用的蚀刻剂可潜在地破坏掺杂物源105和106。固化步骤交联各个掺杂物源105和106以使它们对蚀刻剂具有更强的抵抗性。在固化步骤中防止来自N型掺杂物源106的N型掺杂物扩散至P型掺杂物源105中或将其最小化，这也有助于使得掺杂物源105和106对纹理化工艺中所使用的蚀刻剂具有更强的抵抗性。
在一个实施例中，通过使用热稳定的印料来防止固化中的来自N型掺杂物源106的N型掺杂物扩散至P型掺杂物源105中或将其最小化。在一个实施例中，N型掺杂物源106包括热稳定的印料，其包括硼磷硅玻璃(BPSG)。可将BPSG的硼含量最优化以促进将磷推入多晶硅层104中，而不是在固化步骤中排出气体。例如，BPSG中硼的百分比重可从0.1％变化至5％，而磷的百分比重可从0.5％变化至8％。作为特定的实例，BPSG可具有(a)5％的硼和5％的磷、(b)3％的硼和5％的磷、或者(c)5％的硼和8％的磷。BPSG中硼和磷的百分比重可根据工艺有所变化。通常，硼的百分比重被保持在足够低以实现推入效果，而不对补偿掺杂N型掺杂物源106。BPSG为适合印刷的形式。
在一个实施例中，通过缩短固化时间来防止固化中的来自N型掺杂物源106的N型掺杂物扩散至P型掺杂物源105中或将其最小化。例如，可通过快速加热处理来固化图4的样品。作为一个具体示例，可对图4的样品进行1至2分钟的快速加热处理。相对较短的固化时间将从N型掺杂物源106排出的并扩散进入P型掺杂物源105中的N型掺杂物的数量最小化。
在一个实施例中，通过将P型掺杂物源105做成适当的厚度使得N型掺杂物不能深入扩散到P型掺杂物源105中，来防止固化中的来自掺杂物源106的N型掺杂物扩散至P型掺杂物源105中或将其最小化。例如，可将P型掺杂物源105制作成厚度至少为3000埃，以使其对N型掺杂物的补偿掺杂有更强的抵抗力。
在一个实施例中，通过将从N型掺杂物源106释放的气体从太阳能电池进行固化的腔室排出，来防止固化中的来自N型掺杂物源106的N型掺杂物扩散至P型掺杂物源105中或将其最小化。例如，如图6中所示，可将惰性气体(例如，氮气)在图4的样品的固化步骤期间流过腔室，从而在掺杂物(在该实例中为磷)有机会扩散至掺杂物源前将该掺杂物排出腔室。作为另一个实例，可在低压下在腔室中固化掺杂物源105和106。低压将释放的N型掺杂物排出腔室，而不是扩散到P型掺杂物源105中。
在一个实施例中，通过在固化步骤前在N型掺杂物源106上形成一个覆盖层，来防止固化中的来自N型掺杂物源106的N型掺杂物扩散至P型掺杂物源105中或将其最小化。在图7的实例中，在P型掺杂物源105上形成了一个覆盖层110，在N型掺杂物源106上形成了一个覆盖层111。覆盖层110可包括例如硅酸盐。在固化步骤中，覆盖层110和111防止从任何掺杂物源排出的掺杂物扩散到其它掺杂物源中。可根据实际应用使用一个或两个覆盖层。覆盖层110可阻止腔室中的掺杂物扩散到P型掺杂物源105中。覆盖层110还可以阻止来自P型掺杂物源105的掺杂物排出并进入腔室以及对太阳能电池的N型掺杂物源106或其它材料造成补偿掺杂的可能。覆盖层111可阻止来自N型掺杂物源106的掺杂物排出并扩散到P型掺杂物源105中，并可阻止腔室中的其它掺杂物扩散到N型掺杂物源106中。在图8中，衬底101的正表面和沟槽115被随机纹理化，如同图5。
本发明已公开了包括防止补偿掺杂的太阳能电池结构和制造工艺。虽然已提供了本发明的具体实施例，但是应当理解，这些实施例是用于举例说明的目的，而不用于限制。通过阅读本公开，许多另外的实施例对于本领域的普通技术人员而言将是显而易见的。

Claims (6)

1.一种太阳能电池结构，包括：
太阳能电池衬底，该太阳能电池衬底包括在正常工作期间朝向太阳以接收太阳辐射的正面，以及与正面相对的背面；
覆盖在太阳能电池衬底背面上的多晶硅层；以及
形成于多晶硅层上的第一掺杂物源和第二掺杂物源，第一和第二掺杂物源包括可印刷印料，第一掺杂物源包括硼磷硅玻璃(BPSG)，
其中第一掺杂物源为N型，第二掺杂物源为P型，所述第一掺杂物源和所述第二掺杂物源配置为分别用于形成所述太阳能电池结构的用于将投射在其上的太阳辐射转换为电能的N型扩散区和P型扩散区。
2.根据权利要求1所述的太阳能电池结构，还包括覆盖在太阳能电池衬底正面上的纹理化表面。
3.根据权利要求1所述的太阳能电池结构，其中第二掺杂物源包括硼。
4.一种太阳能电池结构，包括：
太阳能电池衬底，该太阳能电池衬底包括在正常工作期间朝向太阳以接收太阳辐射的正面，以及与正面相对的背面；
覆盖在太阳能电池衬底背面上的多晶硅层；以及
形成于多晶硅层上的第一掺杂物源和第二掺杂物源，第一和第二掺杂物源包括可印刷印料并具有相反的导电类型，第二掺杂物源具有大于3000埃的厚度，
其中第一掺杂物源为N型，第二掺杂物源为P型，所述第一掺杂物源和所述第二掺杂物源配置为分别用于形成所述太阳能电池结构的用于将投射在其上的太阳辐射转换为电能的N型扩散区和P型扩散区。
5.根据权利要求4所述的太阳能电池结构还包括覆盖在太阳能电池衬底正面上的纹理化表面。
6.根据权利要求4所述的太阳能电池结构，其中第二掺杂物源包括硼。
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US8377738B2 (en) 2013-02-19
US20120000522A1 (en) 2012-01-05
WO2012003032A1 (en) 2012-01-05
CN102959715A (zh) 2013-03-06
CN105489674A (zh) 2016-04-13
JP2013529856A (ja) 2013-07-22
AU2011271676A1 (en) 2013-01-17
JP6236479B2 (ja) 2017-11-22
KR101811188B1 (ko) 2017-12-20
KR20130098190A (ko) 2013-09-04
EP2589086A1 (en) 2013-05-08
AU2011271676B2 (en) 2015-03-05
JP5921540B2 (ja) 2016-05-24
JP2016129236A (ja) 2016-07-14
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