CN105489386A - Solar cell frame with quick gas detection function - Google Patents
Solar cell frame with quick gas detection function Download PDFInfo
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- CN105489386A CN105489386A CN201610023645.6A CN201610023645A CN105489386A CN 105489386 A CN105489386 A CN 105489386A CN 201610023645 A CN201610023645 A CN 201610023645A CN 105489386 A CN105489386 A CN 105489386A
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 211
- 239000011521 glass Substances 0.000 claims description 79
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 67
- 229910021426 porous silicon Inorganic materials 0.000 claims description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 206010070834 Sensitisation Diseases 0.000 claims description 58
- 230000008313 sensitization Effects 0.000 claims description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 56
- 238000002360 preparation method Methods 0.000 claims description 50
- 238000009792 diffusion process Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 30
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 29
- 239000010935 stainless steel Substances 0.000 claims description 29
- 229910001220 stainless steel Inorganic materials 0.000 claims description 29
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 28
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 28
- 238000004140 cleaning Methods 0.000 claims description 28
- 239000008367 deionised water Substances 0.000 claims description 28
- 229910021641 deionized water Inorganic materials 0.000 claims description 28
- 239000003792 electrolyte Substances 0.000 claims description 25
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 25
- 239000002041 carbon nanotube Substances 0.000 claims description 24
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 24
- 230000003197 catalytic effect Effects 0.000 claims description 24
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 24
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical group CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 21
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 21
- 238000005260 corrosion Methods 0.000 claims description 21
- 235000019441 ethanol Nutrition 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 238000003756 stirring Methods 0.000 claims description 21
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 244000137852 Petrea volubilis Species 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 14
- 238000009434 installation Methods 0.000 claims description 14
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 14
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 230000006870 function Effects 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 7
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 239000004570 mortar (masonry) Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 229920006267 polyester film Polymers 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 7
- 238000004080 punching Methods 0.000 claims description 7
- 150000003222 pyridines Chemical class 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 229960001866 silicon dioxide Drugs 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 7
- 239000006228 supernatant Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 31
- 230000008859 change Effects 0.000 description 11
- 230000009466 transformation Effects 0.000 description 11
- 230000004044 response Effects 0.000 description 10
- PDWBGRKARJFJGI-UHFFFAOYSA-N 2-phenylcyclohexa-2,4-dien-1-one Chemical compound O=C1CC=CC=C1C1=CC=CC=C1 PDWBGRKARJFJGI-UHFFFAOYSA-N 0.000 description 5
- 238000012422 test repetition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000000505 pernicious effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell frame with a quick gas detection function. A detecting device is mounted on the external surface of the solar cell frame. The detecting device is based on a self-powering sensing element and comprises a data reading module and a gas identification module. The self-powering sensing element comprises a dye-sensitized solar cell module and a gas sensor module. The dye-sensitized solar cell module is used as the working power supply of the gas sensor module and generates a self-powering effect. Quick detection for harmful gases in the working environment of the solar cell frame can be realized. Furthermore the solar cell frame has advantages of high sensitivity and high repeatability.
Description
Technical field
The present invention relates to field of solar energy, more specifically relate to a kind of solar cell frame with fast detecting gas function.
Background technology
Solar cell frame, also known as solar components frame, refers to the aluminium alloy extrusions fixed frame that solar cell panel assembly is formed or support.Its Main Function fixes, sealed solar energy battery component, extends its useful life etc.
But, due to the extensive use of solar cell, need it to adapt to different environment, such as to the measuring ability etc. of environmental gas.
Summary of the invention
The object of the invention is to avoid weak point of the prior art and a kind of solar cell frame with fast detecting gas function is provided.
Object of the present invention is achieved through the following technical solutions:
A kind of solar cell frame with fast detecting gas function, this solar cell frame outer surface installation detecting device, described checkout gear is based on self energizing sensing element, and this self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Dye sensitization of solar module can as the working power of gas sensor module, self-energizing effect is produced to it, and then the fast detecting that can realize pernicious gas in operational environment residing for solar cell frame, highly sensitive, and repeatability is high, reaches the object of efficiency utilization solar energy simultaneously.
Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolyte between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 85nm, and the described length to carbon nano-tube on electrode is 9 μm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film as the composite sensitive material detecting gas together with porous silicon, and the aperture of described porous silicon is 10 ~ 30nm; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the cuboid framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outer surface of described framework by adhesive, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 45mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tube furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component is made up of diffusion control rete, instruction support powder and glass tube; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
Usefulness of the present invention is:
(1) the present invention is based on DSSC technology and gas sensor technology, design self-energizing gas sensor, namely the energy of working sensor is provided with DSSC; DSSC is connected with porous silicon-base gas sensor, comprises solar module, sensor assembly, data read module and gas detection module; Solar cell is used as the working power of transducer by solar power generation, produce self-energizing effect to gas sensor, and maximum using solar energy resources, decreases energy waste and environmental pollution.
(2) in DSSC in electrode, usually adopt Pt as to electrode catalyst agent material, but platinum is a kind of noble metal, expensive, the present invention adopts carbon nano-tube to substitute Pt as catalyst, makes simple, catalytic efficiency is high, cheap; Preparation cost reduces greatly, is conducive to wideling popularize application; In addition, in the present invention, gas sensor module adopts porous silicon to be sensitive material, simultaneously at porous silicon surface evaporation tungsten oxide layer film, porous silica material and tungsten oxide material are combined as composite sensitive material, in the quick environment-identification of energy, the situation of change of gas, highly sensitive, convenient and swift.
(3) the present invention is provided with the gas identification module that can identify gas type after data read module, the instruction support powder used in the gas detect component arranged in this module judges gas type fast, its work does not need dye sensitization solar cell module to provide energy when running, overall province has saved the energy, and achieves passive detection emission gases; Efficient and convenient.
Accompanying drawing explanation
Utilize accompanying drawing to be described further invention, but the embodiment in accompanying drawing does not form any limitation of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the following drawings.
Fig. 1 is the schematic diagram of solar cell frame of the present invention.
Fig. 2 is the structural representation of dye sensitization solar cell module of the present invention.
Fig. 3 is gas sensor module schematic top plan view of the present invention.
Fig. 4 is the sectional view of gas sensor module of the present invention.
Fig. 5 be dye sensitization solar cell module of the present invention and gas sensor module in conjunction with schematic diagram.
Fig. 6 is the structural representation of gas identification module of the present invention.
Embodiment
In general, after the gas component of senser in gas sensor in extraneous test environment changes, its physical quantity measured accordingly also can change, the specific gas componant changed detects by gas sensor, and then transformed the change of the signal of telecommunication of reflection gas componant change, such as resistance, electric capacity, dielectric etc.
Porous silicon is a kind of material with open structure, and it can by monocrystalline silicon or polysilicon be oxidized in hydrofluoric acid obtains.Porous silicon has the advantage such as good optical property, huge surface area, and at present, porous silicon is to humidity, organic gas, NO
x, CO
x, O
2, HCl etc. shows detection.Take porous silicon as the gas sensor of sensitive material, after mainly utilizing its adsorbed gas, the change of conductivity is to detect gas.When porous silicon is placed in detected gas environment, gas can in porous silicon surface generation suction-operated, gas molecule can capture hole or electronics from porous silicon surface, cause the resistance of porous silicon to change, namely can be recorded the change of gas concentration to be measured by the change of measuring porous silicon resistance or conductance.
There is following technical problem in the gas sensor in current correlation technique: at gas sensor operationally, need external power supply or battery to drive its work, a large amount of use battery can cause environmental pollution and energy waste, to environment, there is potential harm, therefore, the new gas transducer seeking a kind of environmental protection and energy saving is needed.Solar energy, as the continuable novel energy of one, is the basis of human survival and development.In future, solar power generation will become the main energy sources form of human society.At present, solar cell is mainly with silicon solar cell, DSSC and organic solar batteries form, wherein, the silicon solar cell of major part to be monocrystalline and polysilicon be representative on market, although it has, transformation efficiency is high, the advantage of stable performance, but when preparing silicon solar cell, refining high-purity silicon material needs the at substantial energy.
Under solar light irradiation, dye molecule absorbs luminous energy, and it is excited to excitation state by eigenstate, and due to the instability of excitation state, its excitation state electrons is transferred to from dye molecule the conductive layer that Nanometer Semiconductor Films passes through light anode, and then to external circuit; The dye molecule losing electronics can by I in the electrolyte that is close to
-revert to eigenstate, and I
-ion is oxidized to I
3-, electronics is transferred to electrode from external circuit, under the effect of catalyst, by I in electrolyte
3-be reduced to I
-, so circulate.
Based on this, the operation principle of device of the present invention is: DSSC is connected with gas sensor, data read module.Under solar radiation, in DSSC, dye molecule absorbs luminous energy, is excited, the electronics of release flows to external circuit through light anode, forms loop, to electrode by porous silicon-base gas sensor, data detection module, through the catalytic action of carbon nano-tube, go back I in original electrolyte
3-ion, so forms duty cycle; For gas sensor, under detected gas environment, porous silicon and tungsten oxide meeting adsorption gas molecule, its conductivity is caused to change, and then act on the change of electric current, now data monitoring module can detect change, finally shows this gas concentration in real time.
The invention provides a kind of solar cell frame with fast detecting gas function, this solar cell frame outer surface installation detecting device, described checkout gear is based on self energizing sensing element, and this self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Dye sensitization of solar module can as the working power of gas sensor module, self-energizing effect is produced to it, and then the fast detecting that can realize pernicious gas in operational environment residing for solar cell frame, highly sensitive, and repeatability is high, reaches the object of efficiency utilization solar energy simultaneously.
In conjunction with legend the present invention made and further illustrating:
Fig. 1 is solar cell frame schematic diagram of the present invention.Checkout gear 2 is installed on the outer surface of solar cell frame 1.
Fig. 2 is the structural representation of dye sensitization solar cell module of the present invention.
Fig. 3 is gas sensor module schematic top plan view of the present invention.
Fig. 4 is the sectional view of gas sensor module of the present invention.
Fig. 5 be dye sensitization solar cell module of the present invention and gas sensor module in conjunction with schematic diagram.
Fig. 6 is the structural representation of gas identification module of the present invention.
Wherein: the 10-stainless steel-based end, 11-silicon chip substrate, 12-silicon chip substrate, 13-dye sensitization solar cell module, 20-conductive catalytic layer, 21-Porous Silicon area, 23-gas sensor module, 30-electrolyte, 31-Au electrode, 32-tungsten oxide nano, 33-data read module, the substrate of 40-ITO electro-conductive glass, 43-framework, 50-to carbon nano-tube on electrode, 53-air admission hole, 60-TiO
2particle layer and dye molecules, 70-gas identification module, 71-shell body, 72-gas detect component, 73-diffusion control rete, 74-indicates support powder, 75-glass tube.
The invention will be further described with the following Examples.
Embodiment 1
A kind of solar cell frame with fast detecting gas function that embodiments of the invention provide, the outer surface installation detecting device of this solar cell frame, described checkout gear based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolyte between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 85nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the cuboid framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outer surface of described framework by adhesive, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 500nm, and the thickness of described Ni film is 10nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 45mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tube furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component is made up of diffusion control rete, instruction support powder and glass tube; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
Test data:
In obtained device, DSSC 9 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 10 ~ 30nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 11.6% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 9.3%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 5ppm, to the NO of 100ppm
2, sensitivity is 72, response time 7s; To NH
3the detection limit of gas is 5ppm, to the NH of 100ppm
3, sensitivity reaches 56, response time 4s.
Embodiment 2:
A kind of solar cell frame with fast detecting gas function that embodiments of the invention provide, the outer surface installation detecting device of this solar cell frame, described checkout gear based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolyte between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 38nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the cuboid framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outer surface of described framework by adhesive, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 7nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 30 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 2:3 and the mixed liquor of deionized water, and corrosion current is 40mA/cm
2, etching time is 2h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tube furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 60nm.
Described data read module is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component is made up of diffusion control rete, instruction support powder and glass tube; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
Test data:
In obtained device, DSSC 7 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 5 ~ 25nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 10.2% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 8.1%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 12ppm, to the NO of 100ppm
2, sensitivity is 52, response time 9s; To NH
3the detection limit of gas is 9ppm, to the NH of 100ppm
3, sensitivity reaches 50, response time 6s.
Embodiment 3
A kind of solar cell frame with fast detecting gas function that embodiments of the invention provide, the outer surface installation detecting device of this solar cell frame, described checkout gear based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolyte between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 55nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the cuboid framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outer surface of described framework by adhesive, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 260nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.2M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 1:5 and the mixed liquor of deionized water, and corrosion current is 20mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tube furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component is made up of diffusion control rete, instruction support powder and glass tube; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
Test data:
In obtained device, DSSC 9 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 5 ~ 50nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 10.3% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 7.7%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 16ppm, to the NO of 100ppm
2, sensitivity is 51, response time 21s; To NH
3the detection limit of gas is 13ppm, to the NH of 100ppm
3, sensitivity reaches 29, response time 17s.
Embodiment 4
A kind of solar cell frame with fast detecting gas function that embodiments of the invention provide, the outer surface installation detecting device of this solar cell frame, described checkout gear based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolyte between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 80nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the cuboid framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outer surface of described framework by adhesive, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 350nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 5ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 6ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 2:3 and the mixed liquor of deionized water, and corrosion current is 48mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tube furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 70nm.
Described data read module is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component is made up of diffusion control rete, instruction support powder and glass tube; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
Test data:
In obtained device, DSSC 8 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 20 ~ 40nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 8.7% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 7.4%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 26ppm, to the NO of 100ppm
2, sensitivity is 39, response time 15s; To NH
3the detection limit of gas is 12ppm, to the NH of 100ppm
3, sensitivity reaches 37, response time 9s.
Embodiment 5
A kind of solar cell frame with fast detecting gas function that embodiments of the invention provide, the outer surface installation detecting device of this solar cell frame, described checkout gear based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolyte between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 100nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the cuboid framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outer surface of described framework by adhesive, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 25mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tube furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component is made up of diffusion control rete, instruction support powder and glass tube; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
Test data:
In obtained device, DSSC 9 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 30 ~ 70nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 11.7% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 9.7%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 14ppm, to the NO of 100ppm
2, sensitivity is 67, response time 15s; To NH
3the detection limit of gas is 25ppm, to the NH of 100ppm
3, sensitivity reaches 36, response time 23s.
Finally should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; although done to explain to the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (2)
1. one kind has the solar cell frame of fast detecting gas function, it is characterized in that: described solar cell frame outer surface installation detecting device, this checkout gear based on self energizing sensing element, and comprises data read module and gas identification module, this self energizing sensing element comprises dye sensitization solar cell module (13) and gas sensor module (23), described dye sensitization solar cell module (13) comprises electrode, light anode and is filled in described to the electrolyte (30) between electrode and light anode, described comprised to electrode the stainless steel-based end (10), the conductive catalytic layer (20) being close to the stainless steel-based end (10), the carbon nano-tube (50) be arranged on described conductive catalytic layer (20), the TiO that described smooth anode comprises ITO electro-conductive glass substrate (40) and is positioned in ITO electro-conductive glass substrate (40)
2particle and dye molecules (60), described TiO
2the particle diameter of particle is about 85nm, and the described length to carbon nano-tube on electrode (50) is 9 μm, described gas sensor module (23) comprises silicon chip substrate (11), tungsten oxide nano (32) and Au electrode (31), on the surface of described silicon chip substrate (11), corrosion has Porous Silicon area (21), the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film as the composite sensitive material detecting gas together with porous silicon, and the aperture of described porous silicon is 10 ~ 30nm, described dye sensitization solar cell module (13) and gas sensor module (23) are arranged at surface, and to have a diameter to be the specification of the air admission hole (53) of 0.5cm be in the cuboid framework (43) of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module (13) is bonded to the outer surface of described framework (53) by adhesive, and make light anode upward, described gas sensor module (23), it is inner that data read module (33) is arranged at described framework (53), described dye sensitization solar cell module (13), described gas sensor module (23) is connected by wire with data read module (33).
2. solar cell frame according to claim 1, is characterized in that,
The making of described dye sensitization solar cell module (13) comprises the steps:
S1: prepared by electrode: the stainless steel-based end (10) 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method to form conductive catalytic layer (20) at the stainless steel-based end (10) upper plating Cr film and Ni film, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyst, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml acetylacetone,2,4-pentanedione mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate (40) of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and is injected in cavity by electrolyte (30), forms dye sensitization solar cell module (13);
The preparation of described gas sensor module (23) comprises the following steps:
1. cutting silicon wafer substrate (11) size is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulfuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate (11) deionized water rinsing clean, then put into hydrofluoric acid and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluoric acid (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 45mA/cm
2, etching time is 1h, forms the Porous Silicon area (21) of size 1.5cm × 1cm on silicon chip substrate (11) surface;
3. silicon chip substrate (11) is put into magnetic control sputtering device, at its Porous Silicon area (21) surperficial evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate (11) is put into tube furnace, pass into nitrogen under sealing normal pressure, utilize CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method at the Au electrode (31) of Porous Silicon area (21) upper making two round point shapes, the diameter of described Au electrode (31) is 1mm, and thickness is 100nm.
Described data read module (33) is sent to the controller module being arranged at described checkout gear inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described checkout gear is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module (70), described gas identification module (70) is connected with described data read module (33) by wire, described gas identification module (70) is formed primarily of shell body (71) and the gas detect component (72) that is connected with shell body (71) detachable, and described gas detect component (72) is made up of diffusion control rete (73), instruction support powder (74) and glass tube (75); The preparation process of described gas detect component (72) is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of Muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion control film: adopt the thick polyester film of 0.5mm as diffusion control film, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion control film adhesive being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion control film.
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|---|---|---|---|---|
| CN112485296A (en) * | 2019-09-11 | 2021-03-12 | 中国科学院金属研究所 | Preparation method of self-powered gas sensor based on single-walled carbon nanotube |
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| CN101587781A (en) * | 2009-06-26 | 2009-11-25 | 大连理工大学 | Process for preparing dye-sensitized solar cell by complete spray coating process |
| CN102831753A (en) * | 2012-08-16 | 2012-12-19 | 上海霖睿自控设备有限公司 | Solar gas detecting and alarming system |
| CN103661176A (en) * | 2012-08-31 | 2014-03-26 | 陕西浩瀚数码科技有限公司 | Automotive intelligent temperature control system |
| JP2015152519A (en) * | 2014-02-18 | 2015-08-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Inspection device and inspection method |
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|---|---|---|---|---|
| CN101587781A (en) * | 2009-06-26 | 2009-11-25 | 大连理工大学 | Process for preparing dye-sensitized solar cell by complete spray coating process |
| CN102831753A (en) * | 2012-08-16 | 2012-12-19 | 上海霖睿自控设备有限公司 | Solar gas detecting and alarming system |
| CN103661176A (en) * | 2012-08-31 | 2014-03-26 | 陕西浩瀚数码科技有限公司 | Automotive intelligent temperature control system |
| JP2015152519A (en) * | 2014-02-18 | 2015-08-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Inspection device and inspection method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112485296A (en) * | 2019-09-11 | 2021-03-12 | 中国科学院金属研究所 | Preparation method of self-powered gas sensor based on single-walled carbon nanotube |
| CN112485296B (en) * | 2019-09-11 | 2022-04-05 | 中国科学院金属研究所 | Preparation method of self-powered gas sensor based on single-walled carbon nanotube |
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