CN105487354B - Resist remover compositions - Google Patents
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- CN105487354B CN105487354B CN201510574060.9A CN201510574060A CN105487354B CN 105487354 B CN105487354 B CN 105487354B CN 201510574060 A CN201510574060 A CN 201510574060A CN 105487354 B CN105487354 B CN 105487354B
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Abstract
The present invention discloses a kind of Resist remover compositions.The Resist remover compositions show excellent stripping ability, and the corrosion of the metal line in resist stripping technology can be made to minimize and prevent from forming spot on substrate.The present invention also provides a kind of methods that resist is removed using the Resist remover compositions.
Description
Technical field
The present invention relates to a kind of Resist remover compositions.More particularly it relates to a kind of corrosion inhibitor stripper
Composition, which shows excellent stripping ability, and can make hardware cloth in resist stripping technology
The corrosion of line minimizes and can prevent from forming spot (stain) on substrate.
Background technique
With the demand growth to high resolution flat display, people have made efforts to improve the pixel number of unit area,
For example, reducing the width of wiring by the harsh fabrication schedule of such as dry etch process.Moreover, expanding flat-panel monitor needs
Transmission speed of the signal in wiring is improved as wiring raw material by using copper, because of the resistance of the resistivity ratio aluminium of copper
Rate is low.Then, high-performance remover must be used in stripping technology.
Specifically, remover needs to have the residue formed after dry-etching removal ability, and (outstanding to metal line
It is copper and aluminium) corrosion resistance.In addition, remover should be economically beneficial about cost competitiveness, it is added
The many plate bases of work.
Usually using monoethanolamine, monoisopropanolamine etc. water-soluble organic amine or such as gamma-butyrolacton and
The organic solvent of DMSO removes resist.The amine of metal causes corrosion in order to prevent, uses such as catechol, resorcinol, benzene
And the various corrosion inhibitors of triazole etc., and have proposed the Resist remover compositions containing this kind of corrosion inhibitor.
However, standard resist remover combination is known in stripping performance, place during processing or long-term storage
There are problems in terms of reason amount and low stability.For example, the Korean Patent Shen of uncensored Publication No. 10-2006-0117666
A kind of photoresist release agent compositions please be disclose, comprising compound identical with chemical formula 1 of the invention and as work
Property ingredient organic amine compound, and be necessarily required to two or more different corrosion inhibitors for preventing metal line
Corrosion.The presence of a large amount of corrosion inhibitors compromises the performance of Resist remover compositions, for example, stripping ability reduces and complete
Extend at stripping technology the time it takes.
Therefore, resist stripping composition needs to overcome the problem of encountering in related fields, and needs to show excellent
Different anti-corrosion effects and quick and excellent stripping performance.
In addition, the demand to the higher flat-panel monitor of resolution ratio has needed to prevent on substrate during stripping technology
There is the advanced technology of the pollution of such as spot.
[document of related fields]
[patent document]
The uncensored South Korea patent application of Publication No. 10-2006-0117666
Summary of the invention
Then, the present invention already allows for the above problem occurred in the prior art, and the object of the present invention is to provide
A kind of Resist remover compositions, which has strong removal ability to Resist residues, to gold
Belonging to wiring (such as thin copper film and aluminium wiring) has excellent corrosion resistance, and can be effectively prevented the formation of spot.
To achieve the goals above, one aspect of the present invention provides a kind of Resist remover compositions, includes:
The glycol ether compound (A) indicated by following formula 1；
The compound (B) indicated by following formula 2；
Alkali compounds (C)；
Primary alconol (D)；With
Polar aprotic solvent (E),
Wherein, there are the Log Octanol/water Partition Coefficients of negative (-) by the glycol ether compound (A) that following formula 1 indicates
(P) (Log P) value:
[chemical formula 1]
R-(OCH2CH2)n-OH
Wherein, R is methyl (- CH3) or ethyl (- CH2CH3), and n is integer 2 or 3,
[chemical formula 2]
Wherein, R1 to R8 is identical or different, and is each independently hydrogen atom or C1~C4 alkyl.
Specific embodiment
In the following, detailed description will be given of the present invention.
According to an aspect of the present invention, the present invention proposes a kind of Resist remover compositions, includes:
The glycol ether compound (A) indicated by following formula 1；
The compound (B) indicated by following formula 2；
Alkali compounds (C)；
Primary alconol (D)；With
Polar aprotic solvent (E),
Wherein, there are the Log Octanol/water Partition Coefficients of negative (-) by the glycol ether compound (A) that following formula 1 indicates
(P) (Log P) value:
[chemical formula 1]
R-(OCH2CH2)n-OH
Wherein, R is methyl (- CH3) or ethyl (- CH2CH3), and n is integer 2 or 3,
[chemical formula 2]
Wherein, R1 to R8 is identical or different, and is each independently hydrogen atom or C1~C4 alkyl.
Each ingredient is described as follows.
(A) glycol ether compound indicated by chemical formula 1
Resist remover compositions of the invention include the glycol ether compound (A) indicated by following formula 1,
In, which has Log Octanol/water Partition Coefficients (P) (Log P) value of negative (-).
[chemical formula 1]
R-(OCH2CH2)n-OH
Wherein, R is methyl (- CH3) or ethyl (- CH2CH3), and n is integer 2 or 3.
Due to its affinity to water, the glycol ether compound indicated by chemical formula 1 (A) facilitates corrosion inhibitor stripper group
It closes object and removes Resist residues and other organic materials from substrate.That is, the glycol ether compound easily leads to
Crossing makes Resist residues dissolve or be swollen to remove Resist residues from substrate.
Usually used glycol ether compound can enumerate in conventional Resist remover compositions are as follows: ethylene glycol list isopropyl
Ether, ethylene glycol monobutyl ether, diethylene glycol list isopropyl ether, diethylene glycol monobutyl ether, polyethylene glycol, poly glycol monomethyl ether, poly- second
Glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, Tripropylene glycol monomethyl Ether, propylene glycol methyl ether acetate and four
Hydrogen furfuryl alcohol.However, the shortcomings that these compounds, is that Resist remover compositions do not have anti-stain effect to substrate.
In order to overcome the disadvantage, the glycol ether compound indicated by chemical formula 1 is used.The example of glycol ethers includes: diethyl
Glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether and Triethylene glycol ethyl ether, but not limited to this.These chemical combination
Object can be used alone or be applied in combination.
Due to the glycol ether compound containing chemical formula 1, Resist remover compositions of the invention are able to achieve to substrate
Anti-stain effect.Glycol ether compound can classify according to Octanol/water Partition Coefficients (P).
The glycol ether compound of chemical formula 1 according to the present invention is characterized in that the negative Log calculated by following mathematical expression 1
Octanol/water Partition Coefficients (P) (Log P) value.
[mathematical expression 1]
Kow=Co/Cw
Wherein, Co is concentration of the solute in octanol, and Cw is the concentration of solute in water, and Kow represents distribution system
Number, and Kow=P, and Log Kow=Log P.
Resist remover compositions of the invention have prevent the dirt as caused by remover in resist lift-off processing
The excellent ability that stain is formed.This can be predicted with Octanol/water Partition Coefficients (P), and this has been demonstrated experimentally.In this side
Face is calculated according to mathematical formula 1 Octanol/water Partition Coefficients.
The glycol ether compound that the Log value (Log Kow=Log P) of distribution coefficient is negative, which is used to prepare to have substrate, to be resisted
The Resist remover compositions of spot effect.
It is calculated according to mathematical formula 1 the Log value of the Octanol/water Partition Coefficients of various glycol ethers, and by result table 1 listed below
In.Then, it is found that diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and triethylene glycol monomethyl ether are suitable for the present invention.
Table 1
| Glycol ethers | Octanol/water Partition Coefficients (Log Kow) |
| Diethylene glycol monomethyl ether | -1.10 |
| Diethylene glycol monoethyl ether | -0.54 |
| Triethylene glycol monomethyl ether | -0.70 |
| Diethylene glycol monobutyl ether | +0.15 |
| Diethylene glycol monohexyl ether | +1.70 |
The content of total weight based on Resist remover compositions, the glycol ether compound indicated by chemical formula 1 is preferred
For 5 weight % to 70 weight %, and content is more preferably 10 weight % to 30 weight %.The glycol etherificate indicated by chemical formula 1
It closes the content of object and less than 5 weight % the composition is not had or anti-stain effect with very little to substrate.On the other hand,
When the amount of glycol ether compound is more than 70 weight %, for the substrate the piece number that the composition can be removed, the composition can
Reduce stripping ability.
(B) compound indicated by chemical formula 2
Resist remover compositions of the invention include the compound (B) indicated by following formula 2:
[chemical formula 2]
Wherein, the R1 to R8 that may be the same or different is each independently hydrogen atom or C1~C4 alkyl.
In above-mentioned Resist remover compositions, the compound (B) indicated by chemical formula 1 determines to resist metal line
Corrosive nature.
The example of the compound indicated by chemical formula 2 includes, but are not limited to: 4- methyl -4,5,6,7- tetrahydro -1H- benzos
[1,2,3] triazole, 5- methyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole, 5,6- dimethyl -4,5,6,7- tetrahydro -
1H- benzo [1,2,3] triazole and 4,6- dimethyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole.These compounds can be with
It is used singly or in combination.
The dosage of total weight based on Resist remover compositions, the compound indicated by chemical formula 2 (B) is preferably
0.0001 weight % to 0.1 weight %, and dosage is more preferably 0.001 weight % to 0.005 weight %.When by 2 table of chemical formula
When the content of the compound shown is less than 0.0001 weight %, metal line can quilt after it contacts the remover combination for a long time
Partly corrode.On the other hand, Resist remover compositions of compound (A) content greater than 0.1 weight % are due to viscosity liter
Height can reduce stripping ability, and since its cost increases and can be low efficiency in terms of cost performance.
(C) alkali compounds
Resist remover compositions of the invention include alkali compounds (C).
In above-mentioned Resist remover compositions, alkali compounds (C) is for enhancing stripping ability.
Alkali compounds be used for strongly penetrate into resist under various treatment conditions (such as in dry ecthing or wet corrosion
Carve, in ashing or ion implanting processing) in the polymeric matrix of degradation or crosslinking, and destroy the intermolecular linkage of polymer substrate
Or intramolecular bond.Due to the effect, alkali compounds forms empty on substrate in the structural instability part of remaining resist
Resist is modified as amorphous polymer gelling by gap, to be easy to remove resist from substrate.
Alkali compounds be TMAH (tetramethylammonium hydroxide), TEAH (tetraethyl ammonium hydroxide), carbonate, phosphate,
Ammonia and amine.These compounds can be used alone or be applied in combination.
The example of amine includes: primary amine, such as methylamine, ethamine, single isopropylamine, n-butylamine, sec-butylamine, isobutyl amine, tert-butylamine
And amylamine；Secondary amine, such as dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, dibutyl amine, di-iso-butylmanice, methyl ethyl-amine, methyl-prop
Amine, methyl isopropylamine, methylbutylamine and methyl tert-butyl amine；Tertiary amine, such as diethyl hydroxylamine, trimethylamine, triethylamine, tripropyl amine (TPA),
Tri-n-butylamine, triamylamine, dimethyl amine, methyl-diethyl-amine and methyl-di-n-propylamine；Alkanolamine, such as choline, monoethanolamine, diethyl
Hydramine, triethanolamine, single Propanolamine, 2- ethylaminoethanol, 2- (ethylamino) ethyl alcohol, 2- (methylamino) ethyl alcohol, N- methyl two
Ethanol amine, N, N- dimethylethanolamine, N, N- DEAE diethylaminoethanol, 2- (2- aminoethylamino) -1- ethyl alcohol, 1- amino -
2- propyl alcohol, 2- amino -1- propyl alcohol, 3- amino -1- propyl alcohol, 4- amino-n-butyl alcohol, 2- [(methylol) amino] ethyl alcohol and two butanol
Amine；Alkoxyamine, such as (butoxymethyl) diethylamine, (methoxy) diethylamine, (methoxy) dimethylamine, (fourth
Oxygroup methyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxy) diethanol amine, (hydroxyethoxymethyl) two
Ethamine, methyl (methoxy) aminoethane, methyl (methoxy) ethylaminoethanol, methyl (butoxymethyl) amino second
Pure and mild 2- (2- amino ethoxy) ethyl alcohol；And cyclammonium, such as 1- (2- ethoxy) piperazine, 1- (2- amino-ethyl) piperazine, 1- (2-
Ethoxy) methyl piperazine, N- (3- aminopropyl) morpholine, 2- methyl piperazine, 1- methyl piperazine, 1- amino -4- methyl piperazine, 1-
Benzyl diethylenediamine, 1-php, N-methylmorpholine, 4- ethyl morpholine, N- formyl-morpholine, N- (2- ethoxy) morpholine and N-
(3- hydroxypropyl) morpholine, but not limited to this.
Total weight based on Resist remover compositions, the content of alkali compounds are preferably 0.01 weight % to 10 weights
% is measured, and content is more preferably 0.5 weight % to 5 weight %.The content of alkali compounds lower than 0.01 weight % reduces anti-
Agent stripping ability is lost, this will lead to Resist residues and remains on substrate.On the other hand, alkanolamine higher than 10 weight %
Content, which may result in, quickly increases the corrosion rate of metal line.
(D) primary alconol
Resist remover compositions of the invention include primary alconol (D).
Primary alconol in above-mentioned Resist remover compositions is used for dissolving cured imaging polymers, and anti-in removing
Deionized water (DIW) can be made to be easily removed stripping solution in flushing processing after erosion agent, it is against corrosion to make to dissolve in stripper
The reprecipitation of agent is minimized.
The example of primary alconol includes: tetrahydrofurfuryl alcohol, hydroxymethylcyclopentene, 4- methylol -1,3- dioxolanes, 2- methyl -4-
Methylol -1,3- dioxolanes, 2,2- dimethyl -1,3- dioxolanes -4- methanol, 1,3- propylene glycol, 1,3 butylene glycol, 1,4-
Butanediol and 2-methyl cellosolve, but it is not limited to this.These compounds can be used alone or be applied in combination.
Total weight based on Resist remover compositions, the content of primary alconol are preferably 1 weight % to 40 weight %, and more
Preferably 5 weight % to 30 weight %.When stripper solution contains the primary alconol of the weight range, can be used in developing technique
Deionized water (DIW) is easily removed stripper solution.
(E) polar aprotic solvent
Resist remover compositions of the invention include polar aprotic solvent (E).
Polar aprotic solvent enjoys the resist for having the advantage that and guaranteeing removal degradation or crosslinking during etch process etc.
Polymer, and improve stripping ability of the composition for the substrate the piece number that it can be removed.
Polar aprotic solvent is for dissolving by the imaging polymers of alkali compounds gelation.That is, polarity
Aprotic solvent effectively makes photoresist solvation, facilitates alkali compounds rapid osmotic into photoresist, from
And improve stripping performance.In addition, polar aprotic solvent can be such that deionized water is easy in removing the developing technique after resist
Remover combination is removed, to prevent adsorbing/adhering to again again for the resist of remover combination and dissolution as far as possible.It is preferred that
Ground, polar aprotic solvent have neither excessively high only low boiling point, to realize suitable stripping ability, and it is a kind of or
Various polarity aprotic solvent can be used in combination.
The example for being suitable for the invention polar aprotic solvent includes: pyrrolidone-2 compounds, such as N- methylpyrrole
Alkanone (NMP), N- ethyl pyrrolidone etc.；Imidazolidinone compound, such as 1,3-Dimethyl-2-imidazolidinone, 1,3- dipropyl
Base -2- imidazolone etc.；Lactone compound, such as gamma-butyrolacton；Sulfoxide compound, such as dimethyl sulfoxide (DMSO), ring fourth
Sulfone etc.；Phosphate compound, such as triethyl phosphate, tributyl phosphate etc.；Carbonate products, such as dimethyl carbonate, carbon
Sour ethyl etc.；And amide compound, such as formamide, N-METHYLFORMAMIDE, N- ethyl-formamide, N, N- dimethyl formyl
Amine, N, N- diethylformamide, acetamide, N- methylacetamide, DMAC N,N' dimethyl acetamide, N, N- dimethylpropionamide, N-
(2- ethoxy) acetamide, 3- methoxyl group-N, N- dimethylpropionamide, 3- (2- ethyl hexyl oxy)-N, N- dimethylpropionamide
With 3- butoxy-N, N- dimethylpropionamide.These compounds can be used alone or be applied in combination.
Total weight based on Resist remover compositions, the content of polar aprotic solvent (E) are preferably 5 weight %
To 75 weight %, and content is more preferably 10 weight % to 50 weight %.If polar aprotic solvent in the content range,
Then Resist remover compositions can advantageously fulfil the function for the imaging polymers that removal is caused to degrade or be crosslinked by etching etc.
Energy.
Resist remover compositions of the invention also may include any one of corrosion inhibitor (F) and deionized water (G)
Or two kinds.
Corrosion inhibitor (F) does not end up on substrate since it dissolves good especially in water and polar solvent, and energy
Prevent the corrosion of such as metal line of aluminium wiring and/or thin copper film.
The example of corrosion inhibitor includes: monocarboxylic acid, formic acid, acetic acid, propionic acid etc.；Dicarboxylic acids, such as oxalic acid, the third two
Acid, succinic acid, glutamic acid, adipic acid, pimelic acid, maleic acid, fumaric acid, glutaconate etc.；Tricarboxylic acids, such as trimellitic acid,
Tricarballylic acid etc.；Organic acid, such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxo
Carboxylic acid (oxicarboxylic acid)；Organic acid amide ester, such as succinamide ester, malic acid carboxylic acid amide esters, maleic acid acyl
Amine ester, amides ester, oxalic acid amide esters, malonic acid carboxylic acid amide esters, glutaramide ester, amide ester, lactamide ester,
Citric mide ester, tartaric acid carboxylic acid amide esters, glycollic acid ester, benzoic acid amides ester and uric acid carboxylic acid amide esters；Azole compounds, such as benzene
And triazole, tolyl-triazole, methyl toluene base triazole, 2,2'- [[[benzotriazole] methyl] imino group] di-methylcarbinol, 2,2'-
[[[methyl-1-hydrogen-benzotriazole-1- base] methyl] imino group] double methanol, 2,2'- [[[ethyl-1- hydrogen-benzotriazole-1-
Base] methyl] imino group] di-methylcarbinol, 2,2'- [[[methyl-1-hydrogen-benzotriazole-1- base] methyl] imino group] di-methylcarbinol, 2,
The double carboxylic acids of 2'- [[[methyl-1-hydrogen-benzotriazole-1- base] methyl] imino group], 2,2'- [[[methyl-1-hydrogen-benzotriazole-
1- yl] methyl] imino group] double methylamines, 2,2'- [[[amine -1- hydrogen-benzotriazole -1- base] methyl] imino group] di-methylcarbinol, 4- first
Base-1- hydrogen-benzotriazole and 5- methyl-1-hydrogen-benzotriazole；Quinine, such as 1,2- benzoquinones, Isosorbide-5-Nitrae-benzoquinones, Isosorbide-5-Nitrae-
Naphthoquinones, anthraquinone etc.；And alkyl gallates, such as catechol, pyrogallic acid, gallicin, gallic acid
Propyl ester, lauryl gallate, octyl gallate and gallic acid, but it is not limited to them.These compounds can be with
It is used singly or in combination.
Total weight based on Resist remover compositions, the content of corrosion inhibitor are preferably 3 weight % hereinafter, and content
More preferably 0.001 weight % to 1 weight %.In the range, corrosion inhibitor not only can be effectively prevented in stripping technology or
Corrode the metal line made of aluminum or aluminum alloy and copper or copper alloy in DIW developing technique, but also can be effectively prevented two
Secondary pollution and stripping ability decline, both of which are attributed to composition and are adsorbed onto metal line.
Deionized water (G) in Resist remover compositions can promote the activation of alkali compounds (C) to improve removing
Rate, and can quickly and completely remove remaining organic pollutant and resist solution on substrate.Further, when go from
When sub- water includes in Resist remover compositions, deionized water can be such that primary alconol is easily mixed with polar aprotic solvent, and
And deionized water (DIW) can be made quickly and completely to remove stripper solution in the developing technique after stripping technology.
Total weight based on Resist remover compositions, the content of deionized water be preferably 50 weight % hereinafter, and
More preferably 1 weight % to 35 weight %.If deionized water content is greater than 50 weight %, Resist remover compositions may
Resist solvability is reduced, and then reduces the substrate the piece number that it can be removed.In addition, when substrate is dipped in wherein for a long time
When, Resist remover compositions can cause the corrosion of metal line.
Under normal conditions, it can be realized by submerging and be combined with flat-panel monitor according to the present invention with corrosion inhibitor stripper
Object removes resist.However, the other technologies such as sprayed can also be used.After with compositions-treated display of the invention,
Even the organic solvent of such as alcohol can be replaced sufficiently to rinse display with water.
Resist remover compositions of the invention can be effectively applied in the resist removal technique of flat-panel monitor, and
And it is applicable to semiconductor and other electronic equipments.
According to another aspect of the present invention, the invention proposes: a method of for manufacturing flat display substrate, wrap
It includes, cleans flat display substrate with anti-corrosion agent composition of the invention；And a kind of FPD manufactured by this method
Device substrate.
Resist remover compositions of the invention can be prepared by mixing mentioned component with above-mentioned amount, and to mixing
It is not particularly limited.As long as it is known in the art, any mixed method can be used.
The present invention may be better understood by following embodiment, following embodiment is for illustrating and proposing, without being solved
It is interpreted as the limitation present invention.
Embodiment 1 to 11 and comparative example 1 to 5: the preparation of Resist remover compositions
Resist remover compositions are prepared using ingredient shown in table 2.
Table 2
(unit: weight %)
Note:
(A) glycol ether compound
A-1: diethylene glycol monoethyl ether
A-2: diethylene glycol monomethyl ether
A-3: triethylene glycol monomethyl ether
A-4: diethylene glycol list isopropyl ether
A-5: ethylene glycol monobutyl ether
A-6: diethylene glycol monobutyl ether
(B) compound indicated by chemical formula 2
B-1:4- methyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole
B-2:5,6- dimethyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole
(C) alkali compounds
C-1: diethyleneglycolamin
C-2: diethanol amine
C-3: monoisopropanolamine
(D) primary alconol
D-1: tetrahydrofurfuryl alcohol
D-2:4- methylol -2,2- dimethyl -1,3- dioxolanes
D-3:2,2- dimethyl -1,3- dioxolanes -4- methanol
(E) polar aprotic solvent
E-1:N- methyl pyrrolidone
* 142E-2:N- methylformamide
E-3:N- ethyl-formamide
(F) corrosion inhibitor
F-1: gallicin
F-2: tert-butyl -4- metoxyphenol
Test example: the performance evaluation of Resist remover compositions
Test example 1: test of the Resist remover compositions to the anti-stain effect of substrate
The Resist remover compositions of embodiment 1~11 and the Comparative Examples 1 to 5 examine the anti-stain effect of substrate
It looks into.For this purpose, providing by sputtering the glass substrate being formed on copper (Cu) layer.Further, by by resist (DWG-
520) baking 3 days at 115 DEG C and removing solvent realizes solidification to prepare resist used in this test.
The obtained resist is substantially dissolved in resist stripping with the amount of 0.3 weight %, 0.5 weight % or 1 weight %
From in agent composition.Hereafter, the Resist remover compositions dissolved with resist are heated to 50 DEG C and are maintained at 50 DEG C.It connects
, substrate is immersed in Resist remover compositions 2 minutes.After taking out Cu substrate in composition, pre- level pressure is used
The nitrogen of power removes remaining Resist remover compositions and resist on substrate to a certain extent, then places a substrate in
On smooth table top.
Then, 5 drops deionized water (DIW) are respectively added to the different loci of substrate with suction pipe, are then allowed to stand 1 minute.
Thereafter, it is rinsed substrate 1 minute with DIW, the DIW remained on substrate is then completely removed using nitrogen.
Use the spot formed on halogen lamp, digital camera and electron microscopy substrate.The results are shown in Table 3.
[evaluation criterion of anti-stain effect]
◎: very good
Zero: good
△: moderate
X: bad
Test example 2: corrosion resistance of the Resist remover compositions to metal line
Following experiment is carried out to evaluate the Resist remover compositions of embodiment 1~11 and the Comparative Examples 1 to 5 to hardware cloth
The corrosion resistance of line.
The substrate of Cu wiring exposure on it is immersed in the embodiment 1~11 and the Comparative Examples 1 to 5 being maintained at 50 DEG C
Resist remover compositions in 10 minutes.Then, by base-plate cleaning and drying, by scanning electron microscope (SEM,
Hitachi S-4700) check the corrosion resistances of Resist remover compositions.As a result it is summarized in following table 3.
[evaluation criterion of corrosion resistance]
◎: it is very good, it is corrosion-free
Zero: it is good, it is almost corrosion-free
△: it is moderate, it is partially corroded, surface roughness changes
×: it is bad, it has been corroded and has been etched
Test example 3: the test of the stripping ability of Resist remover compositions
Carry out the removing of the Resist remover compositions of testing example 1~11 and the Comparative Examples 1 to 5 according to following experiment
Ability.
The film layer of Mo or Cu is formed on the glass substrate, with the examination for stripping ability usually using thin film sputtering method
It tests.After forming photoresist pattern, above-mentioned metal film is etched with wet etching and/or dry etching method.
The Resist remover compositions of Examples 1 to 10 and the Comparative Examples 1 to 5 are constantly maintained at 50 DEG C, then by glass
Glass substrate is immersed up to 5 minutes in every kind of composition, for evaluating stripping ability.Then, substrate is rinsed up to 1 minute with deionized water
To remove the stripper solution being likely to remain at thereon, and substrate is completely dried to remove and be likely to remain at thereon with nitrogen
Deionized water.At scanning electron microscope (SEM, Hitachi S-4700), check with watch substrate whether deteriorate or
Residue with cured resist or dry-etching on it.As a result it is summarized in following table 3.
[evaluation criterion of stripping ability]
◎: very good
Zero: good
△: moderate, remnant parts exist
X: it is bad, removal of residue cannot be removed
Table 3
From the data of table 3, it is apparent that the corrosion inhibitor stripper of embodiment according to the present invention 1~5 and 10 combines
Object shows excellent stripping ability to Mo substrate and Cu substrate, and shows excellent corrosion resistance to Cu wiring.
The Resist remover compositions comprising deionized water of embodiment 6 to 9 are compared to the combination for being free of deionized water
Object, some reductions of stripping ability, however, it was found that whole resists can be removed within the slightly extended time.On the other hand, compare
The Resist remover compositions of example 3 show very bad stripping ability, even if it does not contain deionized water.
It was found that Resist remover compositions of the invention have anti-stain effect, because as resist of the invention is shelled
Content decline from agent composition, forms more spots.In addition, Resist remover compositions of the invention are relative to comparative example
Resist remover compositions, anti-stain excellent effect.
Since with excellent resist stripping ability, Resist remover compositions of the invention can be effectively removed anti-
Agent is lost, and ensures that the metal line for farthest protecting such as aluminium and/or copper is not corroded, without damaging wiring.Into
One step, cost needed for preparing Resist remover compositions is reduced using only a kind of corrosion inhibitor.
In addition, Resist remover compositions prevent the formation of spot.
As described above, disclosing preferred forms of the invention in the description.Although specific term has been used for this
Specification, but these terms are used only to describe the present invention, the appended power of the meaning or limitation and is not intended to limit the present invention
The scope of the present invention described in benefit requirement.Therefore, it will be appreciated by those skilled in the art that the possible various modifications of embodiment and
Equivalent implementations.Therefore, technical scope of the invention should be defined by the technical spirit of claims.
Claims (11)
1. a kind of Resist remover compositions, include:
Based on the total weight of the Resist remover compositions,
The glycol ether compound (A) of 5 weight % to 70 weight % indicated by following formula 1；
The compound (B) of 0.0001 weight % to 0.1 weight % indicated by following formula 2；
The alkali compounds (C) of 0.01 weight % to 10 weight %；
The primary alconol (D) of 1 weight % to 40 weight；With
The polar aprotic solvent (E) of 5 weight % to 75 weight %,
Wherein, there are the Log Octanol/water Partition Coefficients (P) of negative (-) by the glycol ether compound (A) that following formula 1 indicates
(Log P) value:
[chemical formula 1]
R-(OCH2CH2)n-OH
Wherein, R is methyl (- CH3) or ethyl (- CH2CH3), and n is integer 2 or 3,
[chemical formula 2]
Wherein, R1 to R8 is identical or different, and is each independently hydrogen atom or C1~C4 alkyl.
2. Resist remover compositions according to claim 1, wherein the glycol ether compound (A) be selected from by
In the group that diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether and Triethylene glycol ethyl ether form at least
It is a kind of.
3. Resist remover compositions according to claim 1, wherein the compound (B) is selected from by 4- methyl-
4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole, 5- methyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole, 5,6- bis-
Methyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3] triazole and 4,6- dimethyl -4,5,6,7- tetrahydro -1H- benzo [1,2,3]
At least one of the group of triazole composition.
4. Resist remover compositions according to claim 1, wherein the alkali compounds (C) is selected from by four
At least one of ammonium hydroxide, tetraethyl ammonium hydroxide, carbonate, phosphate, ammonia and group of amine composition.
5. Resist remover compositions according to claim 1, wherein the primary alconol (D) be selected from by tetrahydrofurfuryl alcohol,
Hydroxymethylcyclopentene, 4- methylol -1,3- dioxolanes, 2- methyl -4- methylol -1,3- dioxolanes, dimethyl -1 2,2-,
In the group that 3- dioxolanes -4- methanol, 1,3- propylene glycol, 1,3 butylene glycol, 1,4- butanediol and 2-methyl cellosolve form
It is at least one.
6. Resist remover compositions according to claim 1, wherein the polar aprotic solvent (E) is to be selected from
By pyrrolidone-2 compounds, imidazolidinone compound, lactone compound, sulfoxide compound, phosphate compound, carbonate compound
At least one of the group of object and amide compound composition.
7. Resist remover compositions according to claim 1, also comprising selected from by corrosion inhibitor and deionized water group
At at least one of group.
8. Resist remover compositions according to claim 7, wherein based on the Resist remover compositions
Total weight, the dosage of the corrosion inhibitor are 3 weight % or less.
9. Resist remover compositions according to claim 7, wherein based on the Resist remover compositions
Total weight, the dosage of the deionized water are 50 weight % or less.
10. a kind of method for manufacturing flat display substrate, including with according to any one of claim 1 to 9
Resist remover compositions rinse the flat display substrate.
11. a kind of flat display substrate, by manufacturing according to the method for claim 10.
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| KR102414295B1 (en) * | 2016-01-22 | 2022-06-30 | 주식회사 이엔에프테크놀로지 | Photoresist stripper composition |
| CN108535971B (en) * | 2017-03-03 | 2023-09-12 | 易案爱富科技有限公司 | Stripping liquid composition for removing photoresist |
| KR102372922B1 (en) * | 2017-03-29 | 2022-03-11 | 동우 화인켐 주식회사 | Resist stripper composition |
| EP3649513A4 (en) * | 2017-07-06 | 2021-03-31 | Dow Global Technologies LLC | Amide combinations for cleaning and stripping of electronic parts |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219958A (en) * | 1996-05-24 | 1999-06-16 | 雷克特和科尔曼公司 | Alkaline aqueous hard surface cleaning compositions |
| KR20060117667A (en) * | 2005-05-13 | 2006-11-17 | 주식회사 엘지화학 | Stripper composition for photoresist |
| KR20060117666A (en) * | 2005-05-13 | 2006-11-17 | 주식회사 엘지화학 | Stripper composition for photoresist |
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| JP3054145B1 (en) | 1999-04-22 | 2000-06-19 | 東京応化工業株式会社 | Photo-resist stripping composition and photo-resist stripping method using the same |
| KR100649418B1 (en) | 2002-08-22 | 2006-11-27 | 다이킨 고교 가부시키가이샤 | Removing solution |
| KR101082515B1 (en) * | 2008-04-07 | 2011-11-10 | 주식회사 엘지화학 | Stripper composition for photoresist and method for stripping photoresist |
| KR101734593B1 (en) * | 2012-03-29 | 2017-05-11 | 동우 화인켐 주식회사 | Resist stripper composition and a method of stripping resist using the same |
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|---|---|---|---|---|
| CN1219958A (en) * | 1996-05-24 | 1999-06-16 | 雷克特和科尔曼公司 | Alkaline aqueous hard surface cleaning compositions |
| KR20060117667A (en) * | 2005-05-13 | 2006-11-17 | 주식회사 엘지화학 | Stripper composition for photoresist |
| KR20060117666A (en) * | 2005-05-13 | 2006-11-17 | 주식회사 엘지화학 | Stripper composition for photoresist |
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| KR20160030835A (en) | 2016-03-21 |
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