CN105483423A - Manufacturing method of copper/diamond composite material with high thermal conductivity - Google Patents
Manufacturing method of copper/diamond composite material with high thermal conductivity Download PDFInfo
- Publication number
- CN105483423A CN105483423A CN201610023760.3A CN201610023760A CN105483423A CN 105483423 A CN105483423 A CN 105483423A CN 201610023760 A CN201610023760 A CN 201610023760A CN 105483423 A CN105483423 A CN 105483423A
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- Prior art keywords
- copper
- diamond composite
- diamond
- preparation
- thermal conductivity
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
Abstract
The invention discloses a manufacturing method of a copper/diamond composite material with the high thermal conductivity and belongs to the technical field of composite materials. Alloy element titanium is added on a copper matrix, and the copper/diamond composite material is manufactured through an air-pressure infiltration method. According to the optimum manufacturing parameters, the content of alloy element titanium is 0.5 wt.%, the infiltration temperature is 1,150 DEG C, the heat preservation pressure is 1.0 MPa, and the temperature preservation time is 30 min. The thermal conductivity of the manufactured copper/diamond composite material is 752 W/mK, and the coefficient of thermal expansion is 6.5*10<-6>/K. By the adoption of the manufacturing method of the copper/diamond composite material, a good technical solution is provided for efficient heat dissipation of large-power devices.
Description
Technical field
The invention belongs to technical field of composite materials, particularly a kind of preparation method with the copper/diamond composite of high heat conductance.
Background technology
Miniaturization and the integrated heat flow density of power device that causes of electronic devices and components sharply increase, and correspondingly require that electronic package material has high thermal conductivity, to improve the heat-sinking capability of heat control system.Diamond is the material that occurring in nature thermal conductivity is the highest, and metallic copper also has high thermal conductivity, and therefore diamond particles dispersion copper base (copper/diamond) matrix material has good heat conduction potentiality.But, due between diamond and copper without chemical reaction and wetting angle is large, both interface cohesion are poor, and the copper reported/diamond composite thermal conductivity is only 100 ~ 200W/mK, even far below the thermal conductivity 400W/mK of copper.
In order to solve interface cohesion problem between diamond and copper thus improve heat conductivity, a large amount of research work carried out by document, comprises different preparation methods such as adopting powder metallurgy, discharge plasma sintering, vacuum heating-press sintering, ultra-high voltage infiltration, pressure-free impregnation; At metal plating such as diamond particle surfaces plating chromium, boron, titaniums; The alloying elements such as chromium, boron, zirconium are added in Copper substrate.By above technique means, the thermal conductivity of copper/diamond composite is improved, and reaches the level of 500 ~ 600W/mK.But adamantine thermal conductivity is up to 2000W/mK, and its heat conduction potentiality give full play to not yet.
Summary of the invention
Key technical problem to be solved by this invention is, by adding alloying element titanium in Copper substrate, utilizes gas pressure infiltration legal system for copper/diamond composite, obtains the copper/diamond composite with high heat conductance.
Technical scheme of the present invention is:
Have a preparation method for the copper/diamond composite of high heat conductance, it is characterized in that, the composition range of Copper substrate interalloy element titanium is 0.3 ~ 2.0wt.%, utilizes gas pressure infiltration legal system for copper/diamond composite.Concrete preparation method is:
1) by vacuum induction melting method, copper billet and the melting of titanium block are obtained copper-titanium alloy ingot casting;
2) diamond particles is seated in pattern, the pattern filled is placed in graphite sleeve and also copper titanium ingot casting is placed on pattern top, the whole mould filled is placed on the induction heating district of high pressure gas auxiliary infiltration device, connects vacuum system and boost charge-air system;
3) vacuum tightness is evacuated to body of heater and is less than 0.1Pa;
4) mold heated to 1100 ~ 1200 DEG C are incubated 10 ~ 60min;
5) open boost charge-air system and inject high-purity argon gas to body of heater, after furnace inner gas pressure reaches 0.1 ~ 3.0MPa, close boost charge-air system and at 1100 ~ 1200 DEG C heat-insulation pressure keeping 10 ~ 60min;
6) stop heating, furnace temperature takes out mold releasability after being chilled to room temperature, obtains copper/diamond composite product.
The present invention by adding alloying element titanium in Copper substrate, utilize gas pressure infiltration legal system for copper/diamond composite, the thermal conductivity of copper/diamond composite is promoted to the higher level of 752W/mK, meets the active demand of high power device heat radiation to high-thermal conductivity electronic packaging material.
Compared with the copper/diamond composite prepared by other method, beneficial effect of the present invention is:
1) by adding alloying element titanium and utilize gas pressure infiltration method in Copper substrate, the thermal conductivity of prepared copper/diamond composite is high, and thermal expansivity is low, has excellent over-all properties;
2) be add alloying element titanium in Copper substrate equally, the thermal conductivity that hot pressed sintering prepares copper/diamond composite is only 295W/mK; Be utilize gas pressure infiltration method equally, prepared by fine copper and diamond, the thermal conductivity of copper/diamond composite is only 141W/mK; In conjunction with adding alloying element titanium and air pressure method of impregnation in Copper substrate, then can obtain the copper/diamond composite of thermal conductivity up to 752W/mK.
Embodiment
Embodiment 1:
By vacuum induction melting method by copper billet and the melting of titanium block, obtain the copper-titanium alloy ingot casting that composition is 99.5wt.%Cu-0.5wt.%Ti.Be that the diamond particles of 230 μm is seated in pattern by granularity, the pattern filled to be placed in graphite sleeve and the alloy block that composition is 99.5wt.%Cu-0.5wt.%Ti is placed on pattern top, again the whole mould filled is placed on the induction heating district of high pressure gas auxiliary infiltration device, connects vacuum system and boost charge-air system.Open pumped vacuum systems, body of heater is vacuumized until vacuum tightness is less than 0.1Pa.ON cycle water, starts induction heater, by mold heated to 1150 DEG C insulation 15min.Open boost charge-air system and inject high-purity argon gas to body of heater, after furnace inner gas pressure reaches 1.0MPa, close boost charge-air system and heat-insulation pressure keeping 15min.Stop heating, close recirculated water when furnace temperature is down to below 100 DEG C, take out mold releasability, disc-shaped copper/diamond composite product that acquisition diameter is 20mm, thickness is 4mm.Prepared copper/diamond composite thermal conductivity is 752W/mK, and thermal expansivity is 6.5 × 10
-6/ K.
Embodiment 2:
By vacuum induction melting method by copper billet and the melting of titanium block, obtain the copper-titanium alloy ingot casting that composition is 99.7wt.%Cu-0.3wt.%Ti.Be that the diamond particles of 165 μm is seated in pattern by granularity, the pattern filled to be placed in graphite sleeve and the alloy block that composition is 99.7wt.%Cu-0.3wt.%Ti is placed on pattern top, again the whole mould filled is placed on the induction heating district of high pressure gas auxiliary infiltration device, connects vacuum system and boost charge-air system.Open pumped vacuum systems, body of heater is vacuumized until vacuum tightness is less than 0.1Pa.ON cycle water, starts induction heater, by mold heated to 1150 DEG C insulation 10min.Open boost charge-air system and inject high-purity argon gas to body of heater, after furnace inner gas pressure reaches 2.5MPa, close boost charge-air system and heat-insulation pressure keeping 30min.Stop heating, close recirculated water when furnace temperature is down to below 100 DEG C, take out mold releasability, disc-shaped copper/diamond composite product that acquisition diameter is 20mm, thickness is 4mm.Prepared copper/diamond composite thermal conductivity is 664W/mK.
Embodiment 3:
By vacuum induction melting method by copper billet and the melting of titanium block, obtain the copper-titanium alloy ingot casting that composition is 98.0wt.%Cu-2.0wt.%Ti.Be that the diamond particles of 230 μm is seated in pattern by granularity, the pattern filled to be placed in graphite sleeve and the alloy block that composition is 98.0wt.%Cu-2.0wt.%Ti is placed on pattern top, again the whole mould filled is placed on the induction heating district of high pressure gas auxiliary infiltration device, connects vacuum system and boost charge-air system.Open pumped vacuum systems, body of heater is vacuumized until vacuum tightness is less than 0.1Pa.ON cycle water, starts induction heater, by mold heated to 1150 DEG C insulation 15min.Open boost charge-air system and inject high-purity argon gas to body of heater, after furnace inner gas pressure reaches 1.0MPa, close boost charge-air system and heat-insulation pressure keeping 15min.Stop heating, close recirculated water when furnace temperature is down to below 100 DEG C, take out mold releasability, disc-shaped copper/diamond composite product that acquisition diameter is 20mm, thickness is 4mm.Prepared copper/diamond composite thermal conductivity is 123W/mK.
Claims (4)
1. have a preparation method for the copper/diamond composite of high heat conductance, it is characterized in that, the composition range of Copper substrate interalloy element titanium is 0.3 ~ 2.0wt.%, utilizes gas pressure infiltration legal system for copper/diamond composite; Concrete preparation method is:
1) by vacuum induction melting method, copper billet and the melting of titanium block are obtained copper-titanium alloy ingot casting;
2) diamond particles is seated in pattern, the pattern filled is placed in graphite sleeve and also copper titanium ingot casting is placed on pattern top, the whole mould filled is placed on the induction heating district of high pressure gas auxiliary infiltration device, connects vacuum system and boost charge-air system;
3) body of heater is vacuumized;
4) by mold heated;
5) open boost charge-air system and inject high-purity argon gas to body of heater, when furnace gas reaches certain pressure, close boost charge-air system and heat-insulation pressure keeping;
6) stop heating, furnace temperature takes out mold releasability after being chilled to room temperature, obtains copper/diamond composite product.
2. a kind of preparation method with the copper/diamond composite of high heat conductance according to claim 1, is characterized in that step 3) described low vacuum is in 0.1Pa.
3. a kind of preparation method with the copper/diamond composite of high heat conductance according to claim 1, is characterized in that step 4) described mold heated temperature is 1100 ~ 1200 DEG C, soaking time 10 ~ 60min.
4. a kind of preparation method with the copper/diamond composite of high heat conductance according to claim 1, it is characterized in that step 5) described high-purity argon gas furnace inner gas pressure is 0.1 ~ 3.0MPa, at 1100 ~ 1200 DEG C, the heat-insulation pressure keeping time is 10 ~ 60min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610023760.3A CN105483423A (en) | 2016-01-14 | 2016-01-14 | Manufacturing method of copper/diamond composite material with high thermal conductivity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610023760.3A CN105483423A (en) | 2016-01-14 | 2016-01-14 | Manufacturing method of copper/diamond composite material with high thermal conductivity |
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| CN105483423A true CN105483423A (en) | 2016-04-13 |
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| CN201610023760.3A Pending CN105483423A (en) | 2016-01-14 | 2016-01-14 | Manufacturing method of copper/diamond composite material with high thermal conductivity |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107116210A (en) * | 2016-10-27 | 2017-09-01 | 北京科技大学 | Cu-base composites fin of the oriented laminated arrangement of graphite flake and preparation method thereof |
| CN107326213A (en) * | 2017-06-13 | 2017-11-07 | 北京科技大学 | A kind of diamond particles disperse the preparation method of Cu-B alloy composite |
| CN108179302A (en) * | 2018-01-30 | 2018-06-19 | 哈尔滨工业大学 | A kind of preparation method of high heat-conductive diamond/carbon/carbon-copper composite material |
| CN108251733A (en) * | 2018-01-30 | 2018-07-06 | 哈尔滨工业大学 | A kind of preparation method of high heat-conductive diamond/carbon/carbon-copper composite material |
| CN111500892A (en) * | 2020-06-18 | 2020-08-07 | 哈尔滨锦威科技有限公司 | Preparation method of large-size flaky diamond/copper composite material with ultrahigh thermal conductivity |
| CN111748716A (en) * | 2020-06-01 | 2020-10-09 | 陕西斯瑞新材料股份有限公司 | Method for preparing Cu-Zr/Diamond copper-based composite material by using matrix alloying method |
| CN113737072A (en) * | 2021-09-15 | 2021-12-03 | 中南大学 | Preparation method of diamond/metal matrix composite material capable of being machined |
| CN115461480A (en) * | 2020-04-09 | 2022-12-09 | 住友电气工业株式会社 | Composite material, heat sink and semiconductor device |
| CN115852197A (en) * | 2022-12-23 | 2023-03-28 | 北京科技大学 | Copper/diamond composite material with ultrahigh thermal conductivity and preparation method thereof |
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| CN101487108A (en) * | 2008-12-05 | 2009-07-22 | 北京科技大学 | Preparation of nano dispersed phase reinforced copper alloy |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107116210A (en) * | 2016-10-27 | 2017-09-01 | 北京科技大学 | Cu-base composites fin of the oriented laminated arrangement of graphite flake and preparation method thereof |
| CN107326213A (en) * | 2017-06-13 | 2017-11-07 | 北京科技大学 | A kind of diamond particles disperse the preparation method of Cu-B alloy composite |
| CN108179302A (en) * | 2018-01-30 | 2018-06-19 | 哈尔滨工业大学 | A kind of preparation method of high heat-conductive diamond/carbon/carbon-copper composite material |
| CN108251733A (en) * | 2018-01-30 | 2018-07-06 | 哈尔滨工业大学 | A kind of preparation method of high heat-conductive diamond/carbon/carbon-copper composite material |
| CN108179302B (en) * | 2018-01-30 | 2019-12-10 | 哈尔滨工业大学 | preparation method of high-thermal-conductivity diamond/copper composite material |
| CN115461480A (en) * | 2020-04-09 | 2022-12-09 | 住友电气工业株式会社 | Composite material, heat sink and semiconductor device |
| CN115461480B (en) * | 2020-04-09 | 2023-10-24 | 住友电气工业株式会社 | Composite material, heat sink, and semiconductor device |
| CN111748716A (en) * | 2020-06-01 | 2020-10-09 | 陕西斯瑞新材料股份有限公司 | Method for preparing Cu-Zr/Diamond copper-based composite material by using matrix alloying method |
| CN111500892B (en) * | 2020-06-18 | 2021-08-31 | 哈尔滨锦威科技有限公司 | Preparation method of large-size flaky diamond/copper composite material with ultrahigh thermal conductivity |
| CN111500892A (en) * | 2020-06-18 | 2020-08-07 | 哈尔滨锦威科技有限公司 | Preparation method of large-size flaky diamond/copper composite material with ultrahigh thermal conductivity |
| CN113737072A (en) * | 2021-09-15 | 2021-12-03 | 中南大学 | Preparation method of diamond/metal matrix composite material capable of being machined |
| CN113737072B (en) * | 2021-09-15 | 2022-07-12 | 中南大学 | Preparation method of diamond/metal matrix composite material capable of being machined |
| CN115852197A (en) * | 2022-12-23 | 2023-03-28 | 北京科技大学 | Copper/diamond composite material with ultrahigh thermal conductivity and preparation method thereof |
| CN115852197B (en) * | 2022-12-23 | 2024-05-03 | 北京科技大学 | Copper/diamond composite material with ultrahigh thermal conductivity and preparation method thereof |
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Application publication date: 20160413 |
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