CN105470656B - A kind of adjustable line polarisation beam splitters surpassing surface based on gradient - Google Patents
A kind of adjustable line polarisation beam splitters surpassing surface based on gradient Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
- H01Q15/244—Polarisation converters converting a linear polarised wave into a circular polarised wave
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Abstract
The invention belongs to super field of surface technology, specially a kind of adjustable line polarisation beam splitters surpassing surface based on gradient.6 TGMS units are rotated 30 °, are obtained the TGMS hyperelements with phase gradient by the present invention successively in the direction of the clock based on TGMS units;TGMS hyperelements are subjected to several two-dimension periodic continuation along two orthogonal directions of x and y in the horizontal plane again, and the often row TGMS units on the directions x are fed to get to the adjustable line polarisation beam splitters with multiple functions by the micro-strip offset line of TGMS lower layers;The TGMS units are three-layer metal structure, and upper layer is made of the big metal patch of an equity and opening microstrip line, and the opening among microstrip line is for loading PIN diodes;Middle level is metal floor and center is made of the annular groove of double layer of metal cylinder and package upper layer cylinder;Lower metal structure is brush structure.The present invention substantially increases the transfer efficiency of line polarization wave beam separator(Reach 89% or more), realize the switching and regulation and control of wave beam mask work frequency range.
Description
Technical field
The invention belongs to super field of surface technology, and in particular to a kind of adjustable line polarization wave beam point surpassing surface based on gradient
From device.
Background technology
Anisotropic media(Metamaterial, MTM)Refer to nature itself and be not present, people are manually micro- using sub-wavelength
Structural unit and " special " artificial composite structure with certain electroresponse or magnetic response that designs according to electromagnetic theory or
Material.Although people can arbitrarily manipulate electromagnetic wave by three-dimensional anisotropic media, height loss and the complexity made greatly limit
Its application is made, therefore current truly application and few.As a kind of two dimensional flat form of anisotropic media, surpass
Surface in response to and give birth to, due to its unique electromagnetic property and planar structure and can be with the high speed such as aircraft, guided missile, rocket and satellite
Operational objective is conformal without destroying the characteristics such as its contour structures and aerodynamics, in recent years by the favor of researcher and extensively
General concern.By refractive index/phase, whether gradual change can be divided into the super surface of gradient on super surface(Gradient Metasurface, GMS)
With uniform super surface(Homogenous Metasurface, HMS).2011, the discovery of broad sense Snell refraction/reflection laws
Completely new approach and field that people control electromagnetic wave and light are opened, the field is being pushed to generate field technology innovation, GMS
Therefore as anisotropic media new branch and research hotspot.Since GMS being based on SPA sudden phase anomalies and polarizing control thought as a kind of
The two-dimensional gradient structure of design can flexibly control the excitation and transmission of electromagnetic wave, realize unusual refraction/reflection, polarization
Rotation and the unusual function such as asymmetric transmission, have a more powerful electromagnetic wave ability of regulation and control, and GMS is on stealthy surface, conformal
Antenna, digital coding, offset printing etc. show huge potential using value, become a subject system of various countries' plunder
High point and Frontier.
Based on geometry Bell's phase(Geometry Berry Phase)GMS due to need to only pass through the main shaft of rotating unit
Required reflected phase or transmission phase can be obtained without optimizing a large amount of structural parameters, designer need to only pay close attention to reflectivity
Or transmissivity modulus value, the workload and complexity of GMS designs are considerably reduced, the difficulty for designing big phase range is reduced
Degree.Once but previous GMS working frequencies change, and structural parameters, efficiency must be redesigned to obtain same electromagnetic property
It is low, reusability is poor.Simultaneously because the effect of dispersion of phase, the bandwidth of operation of GMS is still relatively narrow, there is an urgent need for expanding, although rotation
GMS is not since its geometry Bell's phase has dispersion characteristics phase bandwidth very wide, but it is only suitable for cross polarization.As super surface is ground
Study carefully deeply and electromagnetic wave control technique development, people by introduce in the cells regulation and control device realize to resonant frequency with
The real-time monitoring of surface impedance so that the dynamic regulation of unusual electromagnetic property is possibly realized, and adjustable super sufacing is new function
The realization and verification of device and electromagnetic wave modulation device provide new method, become the powerful measure for solving above-mentioned bottleneck.But
The research on previous adjustable super surface is limited only to HMS, is yet there are no so far about adjustable GMS(Tunable GMS, TGMS)Disclosure
Report.Simultaneously because the introducing of PIN diode, Q values are very high, and phase hit can be completed in very narrow frequency range in GMS,
And be asymptotic behavior outside in band, the bandwidth of phase dynamic regulation is very narrow.
Invention content
It is an object of the invention to design, a kind of working frequency range is controllable and the adjustable line polarization wave beam separation of high conversion efficiency
Device.
6 TGMS units are pressed up time by the adjustable line polarisation beam splitters that the present invention designs based on TGMS units
Needle direction rotates 30 ° successively, obtains the TGMS hyperelements with phase gradient;Again by TGMS hyperelements in the horizontal plane along x, y
Two-dimension periodic continuation is carried out on two orthogonal directionsN x*N yIt is a(WhereinN x、N yThe number of hyperelement respectively on the direction x, y)And
The often row TGMS units on the directions x are fed by the micro-strip offset line of TGMS lower layers, then obtain that there are multiple functions
Adjustable line polarisation beam splitters namely TGMS.The domain of adjustable line polarisation beam splitters is as shown in Figure 6.
In the present invention, TGMS units are by three-layer metal structure, two layer medium plate and the metal for connecting three-layer metal structure
Change via composition, as shown in Figure 1.Wherein, upper layer metal structure is made of the big metal patch of an equity and opening microstrip line, micro-strip
Opening among line is for loading PIN diodes.The present invention ingenious mesh for introducing a pair of of metal patch near main resonance structure
Be by adjusting patch size and to make it in order to introduce new resonance two resonance frequencies can be realized in mutual cooperation with main resonance
Rate smoothly transitting and cascading, and to effectively reduce Q values, has expanded the phase and frequency modification scope of TGMS tablets.Middle level
Metal structure is metal floor and center is made of the annular groove of double layer of metal cylinder and package upper layer cylinder, cylinder and metallization
Via is electrically connected completely, and annular groove is for being isolated cylinder and floor.Due to the effect of metal floor, the invention belongs to reflectors
System, electromagnetic wave incident to TGMS units, which does not transmit, only to be reflected.Lower metal structure is brush structure, by the circle of symmetrical openings
Ring structure(SRR)And the thin microstrip line composition of two high impedances that is symmetrical above and below and loading lumped inductance.The load of lumped inductance
Main there are two functions, and one is to provide a high reactance value, plays the function of direct current biasing, prevent high-frequency microwave signal from entering straight
Stream source and Dc bias is not influenced, to which the stability of circuit can be improved;Second is that preventing the electricity that upper-layer micro-strip structure generates
It flows through metallization VIA to flow along guide rail, to eliminate the amplitude inconsistency for drawing two separation circular polarisation wave beams.When work, lead to
It crosses upper layer rotational structure and generates geometry Bell's phase that the separation of linear polarization wave beam needs, lower layer's SRR structures keep synchronous rotary simultaneously
Direct current biasing is carried out to upper layer PIN pipes by metallization VIA, while the asymmetric effect of understructure will be by intermediate floor
Layer isolation.
In TGMS units,p x、p yRespectively period of the TGMS units along the direction x, y(That is length),p x=p yIt must be sufficiently large
The metal patch under rotational condition could be accommodated completely, and secondly metal structure is fixed under situation and increasedp xWithp yLoss can be reduced, is put
The severe degree of slow phase change, but too conference influences the sub-wavelength characteristic of unit, thus it is comprehensive choose 11.5mm≤p x=p y<
15mm;d 1For patch and opening microstrip line between spacing,d 1Smaller reflection is bigger, and cross polarization encourages lower two reflection amplitudes
Consistency it is better, but consider actual processing in intensive metal influence of arrangement PIN pipes welding and short circuit occurs, therefore choose
0.3mm≤d 1≤0.5mm;d 2For be open microstrip line width,d 2Bore dia is had to be larger than, i.e.,d 3<d 2,d 3For the big of via diameter
It is small,d 3Smaller loss is smaller, reflection is bigger, frequency is lower, but is restricted by actual processing drill bit size, therefore chooses 0.3mm
≤d 3≤0.5mm;w 1For the width of patch,w 2For the width of the thin microstrip line of high impedance in brush structure, generallyw 2It is the smaller the better,
But for ease of effectively welding and processing, selection 0.15mm≤w 2≤ 0.5mm,R 1、R 2For outer, the inside radius of annulus in brush structure,
Its size byh 4+h 5/2>(R 1+R 2)/ 2 constraints;h 1Withh 2The thickness of respectively upper and lower layer dielectric-slab,h 1Bigger reflectance factor becomes
Change is more flat, and bandwidth is wider, but is to ensure certain bandwidth and axial sub-wavelength characteristic, and selection 3mm≤h 1≤ 6mm,h 2It is smaller to get over
Good and selectionh 2≤0.5mm;h 3For the height of patch,h 4For be open microstrip line top half metal length,h 4Smaller reflection width
It is better to spend bigger and reflection amplitudes consistency, but must ensure that it covers via, that is, meetsh 4+h 5/2>(R 1+R 2)/2;h 5For opening
Length, for ease of effective welding of PIN pipes, choose 1mm≤h 5≤1.5mm;h 6For the size of annular indentation in brush structure,
To ensure that two offset lines are in off state up and down, chooseh 6≥0.8mm。
In the present invention, the TGMS hyperelements with phase gradient rotate 30 ° successively in the direction of the clock by 6 TGMS units
It obtains, wherein lower layer's micro-strip offset line, lumped inductance and two layer medium plate are fixed, remaining is with rotating jointly.First list
Member rotation angle beφ 1=0 °, the rotation angle of second ~ the 6th unit is followed successively byφ 2=30 °,φ 3=60 °,φ 4=90 °,φ 5=120 ° andφ 6=150°.The above-mentioned 6 TGMS units with different rotary angle and phase are increased suitable by rotation angle
Sequence is arranged in order in the x-direction and upper, middle and lower-ranking structure is connected respectively, then TGMS of the synthesis with phase gradient is super single
Member.
Since the rotation angle between adjacent 2 subelements in TGMS hyperelements of the present invention is 30 ° and includes 6 units,
Therefore the reflected phase difference of adjacent cells generation is(Geometry Bell's phase gradient)Δ φ=± 60 ° and TGMS hyperelement can be complete
The phase change of 360 ° of covering.
The adjustable line polarisation beam splitters that the present invention designs, since the offset line of each unit on the directions x joins end to end,
Therefore 6 are often arrangedN xA TGMS units can be carried out unified feed by two offset lines.When voltage is more than 0V(Forward bias)When, PIN
Pipe is connected;When voltage is 0V(Reverse bias)When, PIN pipes disconnect.
The present invention can conditioning technology with rotation GMS be combined, by rotate GMS units introduce PIN diode and pair
Resonance structure realizes the dynamic regulation of TGMS cell geometry Bell's phases, is greatly enlarged the bandwidth of phase dynamic regulation;Together
When inhibit circular polarisation component to the conversion for carrying non-geometric Bell's phase component by well-designed, improve linear polarization wave beam
The transfer efficiency of separator, the paradoxical reflex transfer efficiency of TGMS tablets reaches 89% under the disconnection of PIN pipes, conducting two states
More than.The present invention is based on the linear polarization wave beam separation functions of TGMS under reflection system to be directly extended under transmission system simultaneously.
Description of the drawings
Fig. 1 is the topological structure of TGMS units.Wherein,(a)Full view;(b)Emulation setting;(c)Media layer damage;(d)Side
View(e)Superstructure;(f)Fabric.TGMS units are shone by the polarized plane electromagnetic wave of edge-z-axis incidence y-axis when work
It penetrates.
Fig. 2 is the equivalent-circuit model of TGMS units and PIN diodes.
Fig. 3 is the reflectance factor of TGMS units with the change curve of patch size.Wherein,(a)Amplitude;(b)Phase.
Fig. 4 is the main polarization reflection amplitudes and reflected phase curve of TGMS units when PIN switches disconnect.
The main polarization reflection amplitudes and reflected phase curve of TGMS units when Fig. 5 is PIN switch conductions.
Fig. 6 is the topological structure of TGMS hyperelements and TGMS.
Fig. 7 is that line polarization wave beam separator divides at different frequency with the scattered field of angle and frequency when PIN switches disconnect
Cloth.
Line polarization wave beam separator divides at different frequency with the scattered field of angle and frequency when Fig. 8 is PIN switch conductions
Cloth.
Fig. 9 is that line polarization wave beam separator exists(a)6.07GHZ(PIN switches disconnect)With(b)8.6GHz(PIN switches are led
It is logical)Place scatters field distribution with the normalization of angle.
Specific implementation mode
The present invention is further specifically described below by specific embodiment.
TGMS units are by three-layer metal structure, two layer medium plate and the metallization VIA group for connecting three-layer metal structure
At as shown in Figure 1.
Up/down layer dielectric-slab is all made of polytetrafluoroethylglass glass cloth plate, dielectric constant in the present embodimentε r =2.65, electricity is just
σ=0.001 loss tan is cut, the thickness of copper foil is 0.036mm, whereinp x=p y=12mm, patch and opening microstrip line between
Away fromd 1=0.4mm, the width for the microstrip line that is opend 2=0.5mm, via diameterd 3=0.3mm, the width of patchw 1=3mm, brush structure
The width of the middle thin microstrip line of high impedancew 2=0.4mm, the outer of annulus, inside radius in brush structureR 1=3mm、R 2=2.5mm, above and below
The thickness of layer dielectric-slabh 1=3mm、h 2=0.5mm, the height of patchh 3=9mm, the length for the microstrip line top half metal that is openh 4=
2.5mm, the length of openingh 5=1.5mm, the size of annular indentation in brush structureh 6=1mm。
Fig. 2 gives the equivalent-circuit model of TGMS units and PIN diodes, whereinR s,L s,C sRespectively represent PIN pipes
Dead resistance, package lead inductance and package capacitance,C jRepresent the junction capacity of tube core.When the switch is closed namely the positive guide of voltage
When logical,C j=0, at this time the equivalent-circuit model of diode can use very little series resistanceR sAnd inductanceL sIt is next equivalent, when switch is disconnected
When opening namely when voltage reversal biases, the equivalent-circuit model of diode can use series inductanceL sWithC 1It is next equivalent, hereC 1Wrap
ContainC jInclude againC s.PIN diode uses MA4PBL027 using PIN pipes in the present embodiment, whereinL s=0.7nH,C j=0.03pF,
When leakage current is 10mAR sAbout 3.5 Ω.When electric field polarizes along y-axis, acted on by x-axis direction magnetic field, metal floor with it is upper
Coupling between layer metal structure forms two local magnetic resonances, produces two operating modes, wherein its split shed microstrip line
Magnetic response is generated by first series armL 1、C 1WithR 1It is next equivalent, and the magnetic response that the both sides directions y symmetric metal patch generates
By two series armsL 2、C 2WithR 2Parallel equivalent, here inductanceL 1Include the lead-in inductance of the line inductance and PIN pipes of microstrip line,
CapacitanceC 1By tube core capacitanceC jAnd package capacitanceC sComposition,L 2Indicate the line inductance of patch,C 2Indicate the tablet that patch is formed over the ground
Capacitance, andR 1WithR 2It is respectively intended to the loss of two resonance structures of characterization.Transmission of the electromagnetic wave in dielectric-slab be by impedanceZ c,
Length ishTransmission line it is equivalent, metal floor by be grounded it is equivalent.When electric field polarizes along x-axis, electric field will drive the directions x metal patch
Piece generate magnetic response and byL 3、C 3WithR 3It is equivalent, since the size of patch when both direction polarizes is different, magnetic resonance intensity
It is different with frequency.According to transmission line theory, above three series loop will generate three magnetic resonance frequencies and respectively by、WithIt indicates.
Fig. 3 gives the curve that the reflectance factor of TGMS units changes with patch size, it can be seen that when there is no patch,
Obviously it can be seen that the resonance of an acute variation, exists at resonant frequency 7.46GHz from amplitude and phase response curve
One reflection paddy, amplitude S11=0.8, phase change it is violent and far from resonance when phase present an asymptotic behavior, phase regulation and control
Frequency range it is very narrow, Q values are very high.On the contrary, the resonant intensity of unit obviously dies down and as patch is long when introducing patch
The continuous increase of degree gradually weakens, at this time the resonant frequency of patchWith the resonant frequency of opening microstrip lineIt connects very much
Closely, when patch length increase to a certain extent when, due toReduction makeGradually withSeparation, occurs two
A resonance point, the size by adjusting patch and opening microstrip line can be adjusted arbitrarilyWithFrequency ratio, to greatly
Ground expands the phase modification scope of TGMS units and broadens the bandwidth of operation of TGMS units.
It is theoretical according to spin of photon Hall effect, when the major axes orientation of TGMS unitsu、vWith unit two-dimension periodic continuation institute
In the coordinate of planex、yWhen coincidence, the reflection matrix of TGMS units under circular polarisation baseIt can be expressed as three Pauli squares
Battle arrayWith the linear combination of a unit matrix:
(1)
Wherein,For the reflection Jones matrix under linear polarization base.After rotating φ around z-axis
Reflection matrixIt is represented by:
(2)
Here spin matrix,For Spin transition operator and work as incidence wave
For dextrorotationOr(It is left-handed)When circularly polarised wave, meetWith.Due to metallic intermediate layer
The effect of plate, the electromagnetic response that the asymmetry of lower metal structure generates are shielded, will not be special to the electromagnetism of superstructure
Property generate any influence.Due to the Double Symmetry characteristic of superstructure,r xy=r yx≈ 0, simultaneouslyr xx+r yy=0, therefore reflection matrixCan be with abbreviation:
(3)
According to formula(3)It is found that reflection amplitudes, reach nearly 100% transfer efficiency, and reflect
Phase(Geometry Bell's phase)Have the variation of -2 φ or 2 φ.Therefore when incidence wave is single circularly polarised wave, back wave one
The phase of same polarization and carrying -2 φ or 2 φ, and since geometry Bell's phase that left-handed and right-handed circular polarization wave generates differs
180 °, therefore left-handed and right-handed circular polarization incidence wave will be reflected to after TGMS reflects in two opposite directions.
Fig. 4, Fig. 5 give the reflection amplitudes and phase curve that switch disconnects and TGMS units under two kinds of situations are connected, can
When finding out that switch disconnects, fromr yyAmplitude curve on it is observed that two resonance points≈ 6.07GHz and=
8.51GHz, resonant intensity is weaker and resonance paddy depth S11It is big to be more than 0.89, at the same at resonance ratio TGMS units reflected phase
Strong dispersion relationship is presented with frequency in variation aggravation, and phase change severe degree is directly proportional to resonant intensity, and fromr xxAmplitude
Any resonance is not observed on curve.In entire observation band limits |r xx|≈|r yy| andφ diffClose to 180 near 6GHz
Degree.When switch conduction, due toIt reduces rapidly, fromr yyAmplitude curve on a resonance only can be observed, and due to
Coupling between patch and opening microstrip lineHigh frequency offset has occurred when being disconnected compared with switch.Entire observation band limits
It is interior |r xx|≈|r yy| ≈ 1 andφ diffClose to 180 degree near 8.6GHz.
TGMS units are carried out to rotate clockwise angle φ, wherein lower layer's micro-strip offset line, lumped inductance and two layer medium
Plate is fixed, remaining is with rotating jointly.The rotation angle of first unit isφ 1=0 °, the rotation of second ~ the 6th unit
Angle is followed successively byφ 2=30 °,φ 3=60 °,φ 4=90 °,φ 5=120 ° andφ 6=150°.There is different rotary angle by above-mentioned 6
It is arranged in order in the x-direction by the increased sequence of rotation angle with the TGMS units of phase and upper, middle and lower-ranking structure corresponds to respectively
Connection, then can synthesize the TGMS hyperelements with phase gradient.
Since the rotation angle between adjacent 2 subelements in TGMS hyperelements of the present invention is 30 ° and includes 6 units,
Therefore the reflected phase difference of adjacent cells generation is(Geometry Bell's phase gradient)Δ φ=± 60 ° and TGMS hyperelement can be complete
The phase change of 360 ° of covering.Two-dimension periodic continuation is carried out along x, two orthogonal directions of y in the horizontal plane to TGMS hyperelementsN x*N yIt is a(WhereinN x、N yThe number of hyperelement respectively on the direction x, y)And by the micro-strip offset line of TGMS lower layers to the directions x
On often row TGMS units feed, then can design the adjustable line polarisation beam splitters with multiple functions, namely
The domain of TGMS, final line polarization wave beam separator are as shown in Figure 6.Since the offset line of each unit on the directions x joins end to end,
Therefore 6 are often arrangedN xA TGMS units can be carried out unified feed by two offset lines.When voltage is more than 0V(Forward bias)When, PIN
Pipe is connected;When voltage is 0V(Reverse bias)When, PIN pipes disconnect.
According to generalized reflection, refractive index law, when electromagnetic wave is with incidence angle θiAccording to
When being mapped to TGMS, angle of reflection θrMeet, hereIt is produced for unit length TGMS
Raw phase gradient, may be calculated, λ is the wavelength of electromagnetic wave in free space,For refractive index.When
Angle of reflection can be reduced to when electromagnetic wave impinges perpendicularly on TGMS by free space, pass through conjunction
Reason designIt can make working frequencyf 0Place, namelyWith, according to the size of hyperelementCritical frequency can be calculatedf c.WhenWhen, at this time, the left-handed and right-handed circular polarization wave of scattering is
Communication mode, whenWhen constantly increasing,Constantly reducing, the deviation side of linear polarization wave beam is can control by rationally designing TGMS
To.Since arbitrary line polarization wave can be analyzed to two oppositely oriented circularly polarised waves, according to the theory of front, linear polarization
It will produce that two reflections that amplitude is identical but deviation direction is opposite are left-handed and right-handed circular polarization wave when wave is incident on TGMS.Therefore
Working condition by controlling switch can be with the deviation direction of the working frequency of control line polarisation beam splitters and wave beam.
As shown in fig. 7, when PIN is switched and disconnected, separator obviously works near 6.07GHz, left-handed, the dextrorotation of decomposition
Circularly polarised wave is reflected by approximate constant amplitude in two opposite directions respectively, and from Fig. 9(a)Unusual separation wave at the frequency can be calculated
The relative efficiency of beam is 89.1%, and deviation angle isAlthough and mirror image scatters to obtain certain journey near 9.5GHz
Degree compacting, but due toφ diff=140 ° and not up to requiredφ diff=180 °, therefore according to formula(2)Understand other components
Compacting is not clean.As shown in figure 8, when PIN switch conductions, separator obviously works near 8.6GHz, and deviation angle is, and from Fig. 9(b)The relative efficiency that unusual separation wave beam at the frequency can be calculated is up to 93%, decomposition left-handed and
Right-handed circular polarization wave equally by etc. amplitudes be reflected into two opposite directions, and have wider bandwidth of operation.To sum up, of the invention
Line polarization wave beam separator switch conduction and disconnect two kinds of situations under, line polarization wave can be divided into two wave beams and respectively by
It scatters in two opposite directions, has achieved the purpose that decompose line polarization wave and detach, while realizing and detaching work to wave beam
The dynamic regulation of working frequency and deviation direction.
Claims (3)
1. a kind of adjustable line polarisation beam splitters surpassing surface based on gradient, which is characterized in that with the super surface of adjustable gradient
Based on TGMS units, 6 TGMS units are rotated to 30 ° successively in the direction of the clock, obtain having the TGMS of phase gradient super
Unit;TGMS hyperelements are subjected to several two-dimension periodic continuation along two orthogonal directions of x and y in the horizontal plane again, and are led to
Cross the micro-strip offset lines of TGMS lower layers to the often row TGMS units on the directions x fed to get to multiple functions can
Line transfer polarisation beam splitters;
The TGMS units are by three-layer metal structure, two layer medium plate and the metallization VIA group for connecting three-layer metal structure
At;Wherein, upper layer metal structure is made of a reciprocity big metal patch and opening microstrip line, and the opening among microstrip line is for adding
Carry PIN diode;Middle layer metal structure is metal floor and center is by double layer of metal cylinder and the annular groove for wrapping up upper layer cylinder
Composition, cylinder are electrically connected completely with metallization VIA, and annular groove is for being isolated cylinder and floor;Lower metal structure is brush knot
Structure is made of the circular ring structure SRR and two thin microstrip lines of high impedance that are symmetrical above and below and loading lumped inductance of symmetrical openings;
When work, geometry Bell's phase that the separation of linear polarization wave beam needs is generated by upper layer rotational structure, lower layer's SRR structures keep same
Step rotation simultaneously carries out direct current biasing by metallization VIA to upper layer PIN diode, while the asymmetric effect of understructure will
It can be isolated by intermediate flooring layer.
2. the adjustable line polarisation beam splitters according to claim 1 for surpassing surface based on gradient, which is characterized in that have
The TGMS hyperelements of phase gradient rotate 30 ° successively in the direction of the clock by 6 TGMS units and obtain, and wherein lower layer's micro-strip biases
Line, lumped inductance and two layer medium plate are fixed, remaining is with rotating jointly;The rotation angle of first unit isφ 1=0 °,
The rotation angle of second ~ the 6th unit is followed successively byφ 2=30 °,φ 3=60 °,φ 4=90 °,φ 5=120 ° andφ 6=150°;On
State 6 TGMS units with different rotary angle and phase be arranged in order in the x-direction by the increased sequence of rotation angle and it is upper,
In, lower three-decker is connected respectively.
3. the adjustable line polarisation beam splitters according to claim 2 for surpassing surface based on gradient, which is characterized in that for
TGMS units,p x、p yRespectively TGMS units along the period in the direction x, y, choose 11.5mm≤p x=p y<15mm;d 1For patch with open
Spacing between mouth microstrip line, selection 0.3mm≤d 1≤0.5mm;The width of opening microstrip lined 2More than via diameterd 3, i.e.,d 3<d 2, selection 0.3mm≤d 3≤0.5mm;w 2For the width of the thin microstrip line of high impedance in brush structure, choose 0.15mm≤w 2≤
0.5mm,R 1、R 2For outer, the inside radius of annulus in brush structure, size byh 4+h 5/2>(R 1+R 2)/ 2 constraints,h 4It is micro- to be open
Length with line top half metal,h 5For the length of opening;h 1Withh 2The thickness of respectively upper and lower layer dielectric-slab chooses 3mm
≤h 1≤ 6mm choosesh 2≤0.5mm;h 6For the size of annular indentation in brush structure, chooseh 6≥0.8mm。
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