CN105470644A - Millimeter wave MIMO antenna - Google Patents
Millimeter wave MIMO antenna Download PDFInfo
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- CN105470644A CN105470644A CN201610013444.8A CN201610013444A CN105470644A CN 105470644 A CN105470644 A CN 105470644A CN 201610013444 A CN201610013444 A CN 201610013444A CN 105470644 A CN105470644 A CN 105470644A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
- H01Q1/523—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between antennas of an array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
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Abstract
The invention discloses a millimeter wave MIMO antenna. The millimeter wave MIMO antenna comprises a first radiating element, a second radiating element, an excitation port, a feed via hole, an impedance matching structure, an impedance changer, first metal via holes and second metal via holes, wherein the first radiating element and the second radiating element are printed on the front of a substrate, the excitation port is directly fed by coplanar waveguide of 50 Ohm and is etched on the back of the substrate; the feed via hole is used for connecting a feed part and a radiating element unit, a bottom surface disk of the impedance matching structure is etched on the back of the substrate and plays a role of a capacitor so as to cancel inductance introduced through the feed via hole and realize impedance matching; the impedance changer is etched on the back of the substrate so as to realize good matching between the radiating elements and the feed part; two rows of via holes are formed at two ends, at the feed positions, of the first metal via holes; and the second metal via holes form a reflection cavity around the two radiating elements. The antenna disclosed by the invention is independently controllable, compact in structure, small in size, good in characteristics and high in isolation degree.
Description
Technical field
The present invention relates to the technical field of mimo antenna, refer in particular to a kind of millimeter wave mimo antenna of small-sized wideband high-isolation.
Background technology
Millimeter wave refers to the electromagnetic wave of frequency within the scope of 30GHz-300GHz, and the wave-length coverage of its correspondence is 1mm-10mm.In recent years, due to the present situation that frequency spectrum resource is crowded, and to the sustainable growth of high-speed communication demand, millimeter wave field has become a field of extremely enlivening of the research of international electromagnetic ripple frequency spectrum resource, development and utilization.Millimeter wave frequency band has a large amount of continuous print frequency spectrum resource, for the realization of ultrahigh speed broadband wireless communications provides possibility.
2010, millimeter wave National Key Laboratory of Southeast China University proposes the nearly telecommunication standards Q-LINKPAN of development China's millimeter wave, and (Q represents the Q-wave band at 40 ~ 50GHz here, LINKPAN represents both can support that short distance covers (PAN) at a high speed, also long distance high-speed transfer (LINK) can be supported), and conduct a research the same year.In September, 2012 IEEE802.11aj task groups (TG) formally sets up.This standard promotes primarily of the enterprise of China and research institution. and comprise 59 ~ 64GHz and 43.5 ~ 47GHz, two frequency ranges, wherein IEEE802.1laj (45GHz) is mainly based on short range standard Q-LINKPAN-S.In December, 2013, Ministry of Industry and Information issues the notice of point-to-point wireless access system and mobile service middle width strip wireless access system frequency usage matters in 40 ~ 50GHz frequency range fixed service respectively.Short distance high rate communication (PAN) is assigned with 5.9GHz (42.3GHz-47GHz, 47.2GHz-48.4GHz), mobile service planning in frequency range is used for BWA, and remote high rate communication (LINK) is assigned with 3.6GHz (40.5GHz-42.3GHz, 48.4GHz-50.2GHz), the fixed service planning in frequency range is used for point-to-point wireless access system.These millimetre-wave attenuator technology indicating China will be launched at Q-wave band.
The physical layer transmission of Q-LINKPAN or IEEE802.1laj (45GHz) is intended adopting multiple-input and multiple-output MIMO technology (i.e. MIMO technique).This technology under limited frequency spectrum resource condition, can improve capacity and the reliability of wireless communication system effectively, is also therefore widely applied in many wireless communication systems.Millimeter wave frequency band use in mobile communication system, loads hundreds of antenna by permission base station, and can work simultaneously, and therefore this key technology is also referred to as " MassiveMIMO ".The development of China's millimetre-wave attenuator technology, both provided opportunity to millimeter wave antenna design, also brought challenges simultaneously.Meanwhile, along with the high speed development of mobile intelligent terminal, the design being applied to the millimeter wave antenna of mobile phone terminal also will become focus and the difficult point of future studies.
Research and the invention of millimeter wave antenna and mimo antenna uncoupling have achieved certain achievement.Along with the fast development of millimeter wave wireless communication, the focusing on of much research how to realize millimeter wave antenna broadband on.In many millimeter wave antenna research and invention design, the technology such as SIW (substrate integration wave-guide), multi-layer PCB (printed circuit board (PCB)), LTCC (low temperature charcoal burns pottery) are mentioned and use.Due to opening for free of 60GHz frequency range, the Antenna Design of quite a few invention is mainly applied to this frequency range, and is applied in the invention of the millimeter wave antenna of Q-wave band, then relatively few a lot.In mimo antenna, miniaturized, the research & design of broadband antenna also receives attention.The multiple method for improving the isolation between small-sized mimo antenna unit of oneself proposition of many related invention.And the invention being applied in the small-sized mimo antenna design of Q-wave band is considerably less.
2012, the people such as KeGong deliver the article being entitled as " SubstrateIntegratedWaveguideCavity-BackedWideSlotAntenna for60-GHzBands " at IEEETransactionsonAntennasandPropagation, by above loading wide gap at IW (substrate integration wave-guide) thus realizing the broadband of antenna, available individual layer pcb board processes.
The people such as AmerHagras delivered in 2012 the article being entitled as " Low-mutualcouplingantennaarrayformillimeter-waveMIMOappl ications " at IEEEAntennasandPropagationSocietyInternationalSymposium, this Antenna Operation is in 60GHz frequency range, adopt dielectric resonator antenna as element antenna, be etched in the line of rabbet joint on floor for " blocking " surface current, and the metal tape between two antennas is equivalent to a resonant element when Antenna Operation, these two measures can reduce the mutual coupling between antenna element.
2013, the people such as T.Zhang deliver the article being entitled as " AQ-Banddual-modecavity-backedwidebandpatchantennawithind ependentlycontrollableresonances " at 2013ProceedingsoftheInternationalSymposiumonAntennas & Propagation, except the resonance frequency of paster antenna itself, feed via hole and disk are placed between paster antenna and feed structure, make to reach good impedance matching at high frequency treatment, occurred the characteristic of double resonance.When two resonant frequency points near time, impedance bandwidth will increase.
In existing millimeter wave antenna design, how main consideration increases impedance bandwidth problem, and consider the independent controlled problem of performance, rare consideration is carried out the design of MIMO to antenna and is studied the mutual coupling problem how reduced between antenna element, and the present invention adopts a kind of isolation structure to reduce the mutual coupling between different antennae radiating element, the peak gain of antenna can also be increased simultaneously.In impedance matching, also introduce special antenna structure and introduce multiple mode of resonance, and then improve impedance matching, reach the object of wide impedance bandwidth.The wide bandwidth, the isolation that achieve Unit two and four unit MIMO antenna arrays are high, size is little, can carry out the characteristics such as independence is controlled.
Summary of the invention
The object of the invention is to the deficiencies in the prior art and shortcoming, a kind of millimeter wave mimo antenna of small-sized wideband high-isolation is proposed, this antenna independence is controlled, compact conformation, size are little, characteristic good, achieve the problems such as low-cross coupling, wide bandwidth, small size simultaneously, there is the designing requirement of the mobile terminal mimo antenna system of controllability, be more suitable for being integrated in mobile terminal device system.
For achieving the above object, technical scheme provided by the present invention is: a kind of millimeter wave mimo antenna, include two different radiating elements, be respectively the first radiating element and the second radiating element, and excitation port, feed via hole, the impedance matching structure of bottom surface disk, impedance variation device, the first metallic vias, the second metallic vias; Described first radiating element and the second radiating element are printed on the front of substrate, and this first radiating element is rectangular patch unit, and this second radiating element is U-shaped chip unit, and this rectangular patch unit is placed in the U-shaped mouth of U-shaped chip unit; Described excitation port, by the co-planar waveguide direct feed of 50 ohm, is etched in the back side of substrate; Described feed via hole, for connecting feed part and radiating element portion, is arranged in U-shaped chip unit; The bottom surface disk of described impedance matching structure is etched in the back side of substrate, and its effect is equivalent to an electric capacity, can offset the inductance that feed via hole is introduced, realize impedance matching; Described impedance variation device is etched in the back side of substrate, makes characteristic impedance become 50 ohm from 75 ohm, to realize the impedance matching between radiating element and feed part; Described first metallic vias is formed with two at two ends, feed place and is drained through hole, for suppressing the generation of feed place surface wave; Described second metallic vias forms a reflection chamber around two radiating elements, for improving the peak gain of antenna.
Described reflection chamber is medium integrated waveguide rectangular cavity, and two radiating elements are placed in the centre position of this medium integrated waveguide rectangular cavity.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
1, compare with existing mimo antenna battle array, the present invention introduces the different microband paste radiating element of two panels, effectively increase impedance bandwidth, and the independence achieving resonance point is controlled.Suitably adjust the size of chip unit and the size of feed via hole and disc structure, just can obtain good impedance bandwidth, and the impact that isolation is subject to is very little.That is, the design can adjust impedance bandwidth independently.
2, compare with existing mimo antenna battle array, invention introduces medium integrated waveguide (SIW) cavity configuration, this structure forms a reflection chamber between antennas, can improve the peak gain of antenna.In addition, owing to defining a structure comparatively closed, the mutual coupling between two antenna unit structures can also be reduced, make the impedance bandwidth of element antenna in mimo antenna battle array maintain the characteristic of original antenna, reduce the degree of coupling between unit simultaneously.This structure make between antenna element without the need to and add the structure of other decouplings outward, just can reach very high isolation.
3, compare with existing millimeter wave mimo antenna battle array, the present invention has wider impedance bandwidth, better isolation, less size, is applicable in various multifunctional small-size handhold device system.
Accompanying drawing explanation
Fig. 1 is the front schematic view of the millimeter wave mimo antenna being applied to Q-wave band.
Fig. 2 is the reverse side schematic diagram of the millimeter wave mimo antenna being applied to Q-wave band.
Fig. 3 is the S11 simulation result figure of the millimeter wave mimo antenna being applied to Q-wave band.
Fig. 4 is the front schematic view of two unit millimeter wave mimo antenna battle arrays.
Fig. 5 is the S parameter simulation result figure of two unit millimeter wave mimo antenna battle arrays.
Fig. 6 is the front schematic view of linear four unit millimeter wave mimo antenna battle arrays.
Fig. 7 is the S parameter simulation result figure of linear four unit millimeter wave mimo antenna battle arrays.
Fig. 8 is the front schematic view of two-dimentional four unit millimeter wave mimo antenna battle arrays.
Fig. 9 is the S parameter simulation result figure of two-dimentional four unit millimeter wave mimo antenna battle arrays.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
As depicted in figs. 1 and 2, millimeter wave mimo antenna described in the present embodiment, the medium substrate material used is Rogers5880, thickness is 0.508mm, include two different radiating elements, be respectively the first radiating element 1 and the second radiating element 2, and excitation port 9, feed via hole 3, the impedance matching structure 6 of bottom surface disk, impedance variation device 8, first metallic vias 4, second metallic vias 10; Described first radiating element 1 and the second radiating element 2 are printed on the front of substrate, and this first radiating element 1 is rectangular patch unit, and this second radiating element 2 is U-shaped chip unit, and this rectangular patch unit is placed in the U-shaped mouth of U-shaped chip unit; Described excitation port 9, by the co-planar waveguide direct feed of 50 ohm, is etched in the back side of substrate; Described feed via hole 3, for connecting feed part and radiating element portion, is arranged in U-shaped chip unit; The bottom surface disk 5 of described impedance matching structure 6 is etched in the back side of substrate, and its effect is equivalent to an electric capacity, can offset the inductance that feed via hole 3 is introduced, realize impedance matching; Described impedance variation device 8 is etched in the back side of substrate, and characteristic impedance can be made to be become 50 ohm (structures 9 in figure) from 75 ohm (structures 7 in figure), to realize the matched well between radiating element and feed part; Described first metallic vias 4 is formed with two at two ends, feed place and is drained through hole, for suppressing the generation of feed place surface wave; Described second metallic vias 10 forms a reflection chamber around two radiating elements, the peak gain of antenna can be improved, this reflection chamber is medium integrated waveguide (SIW) rectangular cavity, two radiating elements are placed in the centre position of this medium integrated waveguide rectangular cavity, by the effect that paster plays, can make the non-constant width of the impedance bandwidth of antenna, relative bandwidth reaches 24.4%, effectively can cover the whole Q-wave band of 40.5GHz to 50.2GHz.
As shown in Figure 3, first resonance point 31 in figure controls primarily of the first radiating element 1, regulates the size of the first radiating element 1, just can move resonance point 31; Second resonance point 32 is produced by the impedance matching structure 6 of bottom surface disk and feed via hole 3, wherein regulates the size of feed via hole 3 and disk 5, just can move resonance point 32; 3rd resonance point 33 controls primarily of the second radiating element 2, regulates the size of the second radiating element 2, can move resonance point 33.
In addition, because above-mentioned medium integrated waveguide rectangular cavity defines a structure comparatively closed, distance between the size of via hole and via hole, the leakage of intra-cavity energy can be suppressed, thus make between two antenna elements separate, therefore can also reduce the mutual coupling between two antenna unit structures, make that the impedance bandwidth of antenna element in mimo antenna battle array (S11) and Fig. 3's is close, reduce the degree of coupling (S21, S31, S41) between antenna element simultaneously.Therefore, this medium integrated waveguide rectangular cavity make between antenna element without the need to and add the structure of other decouplings outward, but reach very high isolation.
Number of antennas integrated is in a limited space more, and obtain high isolation will be more difficult.And in existing mimo antenna battle array design, be mainly devoted to the mutual coupling problem how reduced between antenna element, so the structure of decoupling can be added between antennas but also virtually make the size of antenna array increase like this.Meanwhile, Q-wave band is from 40.5GHz to 50.2GHz, and span is 9.7GHz, also needs to consider how to increase or retain the original impedance bandwidth of bay, can cover whole Q-wave band.
By analyzing above and can knowing, the present invention had both contained increase bandwidth, improved impedance matching, improved the structure of isolation, also had the performance of Independent adjustable.Millimeter wave mimo antenna shown in Fig. 1 and Fig. 2 is applied in the mimo antenna battle array of Unit two and Unit four and is specifically described by we below.
Fig. 4 is the front elevation of two unit millimeter wave mimo antenna battle arrays, and Fig. 6 is the front elevation of linear four unit millimeter wave mimo antenna battle arrays, and Fig. 8 is the front elevation of two-dimentional four unit millimeter wave mimo antenna battle arrays.From the millimeter wave mimo antenna that Fig. 1 and Fig. 2 provides, the two unit millimeter wave mimo antenna battle arrays that Fig. 4 provides contain two antenna elements and two excitation port 9, and excitation port 9, at the two ends of medium substrate, is close between two SIW chambeies, there is no additional more decoupling arrangements, now S
21all-15dB is less than, as shown in Figure 5 in whole working frequency range.The linear four unit millimeter wave mimo antenna battle arrays that Fig. 6 provides contain four antenna elements and four excitation port 9, be analogous to the mimo antenna battle array of Unit two, adjacent excitation port 9 is at the two ends of medium substrate, the one side of cavity is shared between adjacent S IW chamber, there is no additional more decoupling arrangements, now S
21, S
31, S
41all-15dB is less than, as shown in Figure 7 in whole working frequency range.The two dimension four unit millimeter wave mimo antenna battle array that Fig. 8 provides contains four antenna elements and four excitation port 9, and excitation port 9, on each limit of medium substrate, shares the one side of cavity, do not have additional more decoupling arrangements, now S between adjacent S IW chamber
21, S
31, S
41also all-15dB is less than, as shown in Figure 9 in whole working frequency range.
The examples of implementation of the above are only the preferred embodiment of the present invention, not limit practical range of the present invention with this, therefore the change that all shapes according to the present invention, principle are done, all should be encompassed in protection scope of the present invention.
Claims (2)
1. a millimeter wave mimo antenna, it is characterized in that: include two different radiating elements, be respectively the first radiating element and the second radiating element, and excitation port, feed via hole, the impedance matching structure of bottom surface disk, impedance variation device, the first metallic vias, the second metallic vias; Described first radiating element and the second radiating element are printed on the front of substrate, and this first radiating element is rectangular patch unit, and this second radiating element is U-shaped chip unit, and this rectangular patch unit is placed in the U-shaped mouth of U-shaped chip unit; Described excitation port, by the co-planar waveguide direct feed of 50 ohm, is etched in the back side of substrate; Described feed via hole, for connecting feed part and radiating element portion, is arranged in U-shaped chip unit; The bottom surface disk of described impedance matching structure is etched in the back side of substrate, and its effect is equivalent to an electric capacity, can offset the inductance that feed via hole is introduced, realize impedance matching; Described impedance variation device is etched in the back side of substrate, makes characteristic impedance become 50 ohm from 75 ohm, to realize the impedance matching between radiating element and feed part; Described first metallic vias is formed with two at two ends, feed place and is drained through hole, for suppressing the generation of feed place surface wave; Described second metallic vias forms a reflection chamber around two radiating elements, for improving the peak gain of antenna.
2. a kind of millimeter wave mimo antenna according to claim 1, is characterized in that: described reflection chamber is medium integrated waveguide rectangular cavity, and two radiating elements are placed in the centre position of this medium integrated waveguide rectangular cavity.
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| CN201610013444.8A CN105470644B (en) | 2016-01-07 | 2016-01-07 | A kind of millimeter wave mimo antenna |
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| CN201610013444.8A CN105470644B (en) | 2016-01-07 | 2016-01-07 | A kind of millimeter wave mimo antenna |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106953168A (en) * | 2017-03-28 | 2017-07-14 | 华南理工大学 | A kind of plane millimeter wave mimo antenna |
| CN107394382A (en) * | 2017-07-18 | 2017-11-24 | 成都天锐星通科技有限公司 | A kind of bay |
| CN108493590A (en) * | 2018-01-15 | 2018-09-04 | 深圳市信维通信股份有限公司 | Antenna element, mimo antenna and handheld device |
| CN108565551A (en) * | 2018-06-04 | 2018-09-21 | 华南理工大学 | A kind of planar broad band millimeter wave mimo antenna |
| CN110364826A (en) * | 2018-04-11 | 2019-10-22 | 苹果公司 | Against the electronic device antenna array of dielectric layer installation |
| CN110518340A (en) * | 2019-08-30 | 2019-11-29 | 维沃移动通信有限公司 | A kind of antenna element and terminal device |
| CN110739514A (en) * | 2019-11-05 | 2020-01-31 | 南京迈矽科微电子科技有限公司 | Millimeter wave switching structure from substrate integrated waveguides to rectangular waveguides |
| CN112290194A (en) * | 2020-09-17 | 2021-01-29 | 深圳市信维通信股份有限公司 | Integrated small base station antenna |
| CN112736472A (en) * | 2020-12-25 | 2021-04-30 | 无锡国芯微电子***有限公司 | Millimeter wave broadband patch antenna |
| CN113161743A (en) * | 2021-03-12 | 2021-07-23 | 中山大学 | Dual-beam scanning array antenna based on reconfigurable Hadamard matrix |
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| CN106953168A (en) * | 2017-03-28 | 2017-07-14 | 华南理工大学 | A kind of plane millimeter wave mimo antenna |
| CN106953168B (en) * | 2017-03-28 | 2023-06-20 | 华南理工大学 | Plane millimeter wave MIMO antenna |
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| CN108493590B (en) * | 2018-01-15 | 2020-02-11 | 深圳市信维通信股份有限公司 | Antenna unit, MIMO antenna and handheld device |
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| CN108565551B (en) * | 2018-06-04 | 2023-08-22 | 华南理工大学 | Plane broadband millimeter wave MIMO antenna |
| CN108565551A (en) * | 2018-06-04 | 2018-09-21 | 华南理工大学 | A kind of planar broad band millimeter wave mimo antenna |
| CN110518340A (en) * | 2019-08-30 | 2019-11-29 | 维沃移动通信有限公司 | A kind of antenna element and terminal device |
| CN110739514A (en) * | 2019-11-05 | 2020-01-31 | 南京迈矽科微电子科技有限公司 | Millimeter wave switching structure from substrate integrated waveguides to rectangular waveguides |
| CN110739514B (en) * | 2019-11-05 | 2021-06-15 | 南京迈矽科微电子科技有限公司 | Millimeter wave switching structure from substrate integrated waveguide to rectangular waveguide |
| CN112290194A (en) * | 2020-09-17 | 2021-01-29 | 深圳市信维通信股份有限公司 | Integrated small base station antenna |
| CN112736472A (en) * | 2020-12-25 | 2021-04-30 | 无锡国芯微电子***有限公司 | Millimeter wave broadband patch antenna |
| CN113161743A (en) * | 2021-03-12 | 2021-07-23 | 中山大学 | Dual-beam scanning array antenna based on reconfigurable Hadamard matrix |
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