CN105470321A - Multi-energy-band solar absorbing material and preparation method therefor - Google Patents
Multi-energy-band solar absorbing material and preparation method therefor Download PDFInfo
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- CN105470321A CN105470321A CN201510875151.6A CN201510875151A CN105470321A CN 105470321 A CN105470321 A CN 105470321A CN 201510875151 A CN201510875151 A CN 201510875151A CN 105470321 A CN105470321 A CN 105470321A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000011358 absorbing material Substances 0.000 title abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000002994 raw material Substances 0.000 claims abstract description 23
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000000227 grinding Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 32
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000004570 mortar (masonry) Substances 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000003708 ampul Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001778 solid-state sintering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000000584 ultraviolet--visible--near infrared spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a multi-energy-band solar absorbing material and a preparation method therefor. The method comprises the steps: carrying out the batching of reaction raw materials according to the stoichiometric ratio of In2-xNixS3; placing the reaction raw materials in a quartz glass tube, carrying out the vacuum pumping of the quartz glass tube, and sealing the quartz glass tube thereafter; placing the sealed quartz glass tube in a sintering furnace, increasing the temperature to a first target temperature so as to carry out sintering, keeping the temperature for a first preset time, and then enabling the quartz glass tube to be cooled to the room temperature along with the sintering furnace; opening the quartz glass tube, taking out a sample formed by the reaction raw materials from the quartz glass tube, and carrying out grinding; and enabling the sample after grinding to be packaged in the quartz glass tube in a vacuum manner for sintering, so as to obtain a target powder sample.
Description
Technical field
The present invention relates to photoelectric functional material and technical field of solar batteries, more particularly, the present invention relates to the preparation method of a kind of multipotency band solar absorptive material and this multipotency band solar absorptive material.
Background technology
Compared with the non-renewable conventional energy resource such as coal, oil, natural gas, solar energy has aboundresources, cleanliness without any pollution, not by advantages such as region restrictions.Utilize the mode of solar energy a lot, comprise photothermal deformation, opto-electronic conversion and Photochemical convertion etc.In many Solar use modes, the most attractive concern be based on photoelectric solar cell.In recent decades, solar utilization technique researching and developing, commercially produce, all obtain tremendous development in market development, become one of new industry of world's fast and stable development.Therefore, realizing effective utilization of solar energy is one of important research direction of the interdisciplinary fields such as current material, physics, chemistry.
Generally wish solar cell have conversion efficiency high, manufacture that less energy consumption, cost are low, abundant raw material, the characteristic such as durable and nuisanceless.Through the effort of decades, solar cell achieves considerable raising in conversion efficiency etc.With crystalline silicon be the first generation solar cell of representative because aboundresources, conversion efficiency is high, is the solar cell that exploitation is the fastest now.The shortcoming that but silica-base material also exists the absorption coefficient of light low (indirect gap semiconductor), raw materials consumption is large, manufacturing process is complicated, cost is high, the energy recovery cycle is long.With the second generation hull cell that cadmium telluride, Copper Indium Gallium Selenide are representative, because have, raw material dosage is few, absorption coefficient is high, gap tunable, low cost and other advantages, causes the research interest of people.Simultaneously to make full use of solar spectrum, improve the laminated cell for the purpose of solar battery efficiency, the third generation new ideas solar cells such as multipotency band solar cell also start to attract much attention.Compared to silica-based and hull cell, third generation solar cell cost and efficiency comprehensive in, cost performance is higher, thus has vast potential for future development.
In traditional solar energy and semiconductor absorbing material, Electron absorption photon transits to conduction band from valence band, thus produces photo-generated carrier.The photon so just causing energy to be less than bandwidth cannot be absorbed by material, and the photon that energy is greater than bandwidth then only has part energy by material use, and the part exceeding bandwidth is interacted by Electron-phonon etc. and is converted into heat energy thus causes energy loss.After introduce impurity Intermediate Gray in semi-conducting material band gap, thus utilize solar spectrum to decrease energy loss better.In sum, impurity band can be introduced in acceptor's semiconductor band gap by suitable element doping.Doped semiconductor preparation synthesis is relatively simple, can introduce higher doping content, thus causes stronger impurity multipotency band to absorb and be conducive to reducing charge carrier non-radiative recombination.Therefore, by selecting element-specific doping to induce the generation of parent compound impurity band to be a kind of practicable effective ways.
But prior art does not also propose the simple and multipotency band solar absorptive material of raw material safety of a kind of preparation method.
Summary of the invention
Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, provides a kind of preparation method with the multipotency band solar absorptive material of multipotency bandwidth spectrum solar absorption ability and the simple raw material safety of this multipotency band solar absorptive material.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of multipotency band solar absorptive material, wherein said multipotency band solar absorption semi-conducting material is chemical general formula is In
2-xni
xs
3compound, wherein 0 < x < 2.
Preferably, the value of x is in 0.02,0.05,0.1,0.15 and 0.2.
Preferably, the matrix semiconductors compound of described multipotency band solar absorption semi-conducting material is In
2s
3binary compound, the part In atom of parent compound is replaced by Ni atom.
Preferably, the doping content of transition group atom Ni is between 2at%-10at%.
Preferably, 3d electronics splitting in crystalline field of transition group atom Ni produces interstitial impurity and can be with, and has multipotency band solar absorption ability.
According to the present invention, additionally provide a kind of multipotency band solar absorptive material preparation method, comprising:
First step: according to In
2-xni
xs
3stoichiometric proportion reaction raw materials is prepared burden, wherein 0 < x < 2;
Second step: reaction raw materials is placed in quartz glass tube, vacuumizes quartz glass tube, after this by the quartz glass seal of tube;
Third step: the quartz glass tube of sealing is put into sintering furnace, is warming up to first object temperature to carry out sintering and to be incubated for first scheduled time, then makes quartz glass tube be cooled to room temperature with sintering furnace;
4th step: open quartz glass tube, the sample taking out reaction raw materials formation from quartz glass tube grinds;
5th step: the sample after grinding again Vacuum Package is sintered to obtain target powder sample in quartz glass tube.
Preferably, the value of x is in 0.02,0.05,0.1,0.15 and 0.2.
Preferably, first object temperature is 800 DEG C, and described first scheduled time is 48 hours.
Preferably, 5th step comprises: by the sample after grinding again Vacuum Package in quartz glass tube, the quartz glass tube of sealing is put into sintering furnace, slowly be warming up to the second target temperature to carry out sintering and to be incubated for second scheduled time, then make quartz glass tube be cooled to room temperature with sintering furnace.
Preferably, the second target temperature is 800 DEG C, and second scheduled time was 48 hours.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 schematically shows the flow chart of multipotency band solar absorptive material preparation method according to the preferred embodiment of the invention.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
The present invention utilizes the splitting in crystalline field of the d electronics of transition group atom Ni can be with to produce interstitial impurity, thus realizes multipotency band solar absorption.In
2s
3have non-poison, good stability, the features such as photoelectric characteristic is excellent are a kind of very important photovoltaic materials.In
2s
3experiment band gap is 1.85 ~ 2.2eV, and this value is in the optimization range corresponding to high efficiency impurity band solar cell (2.0 ~ 2.5eV).Therefore with In
2s
3as acceptor, realize impurity band by doping and form the photo-absorption region just widening this material, strengthen solar absorption.
The multipotency band solar absorption semi-conducting material that the present invention is formed is chemical general formula is In
2-xni
xs
3compound, wherein 0 < x < 2.
Such as, the matrix semiconductors compound of described multipotency band solar absorption semi-conducting material is In
2s
3binary compound, the part In atom of parent compound is replaced by Ni atom.
Preferably, the doping content of transition group atom Ni is between 2at%-10at%.3d electronics splitting in crystalline field of transition group atom Ni produces interstitial impurity and can be with, and has multipotency band solar absorption ability.
The present invention is based on Coordinative Chemistry concept, take modern quantum mechanics energy band analysis method, have devised the In adopting bridging atom Ni doping
2s
3material, and by the serial In of solid state sintering reaction preparation
2-xni
xs
3(preferably, x=0.02,0.05,0.1,0.15,0.2) powder body material.UV-vis-NIR absorption spectrum test display this kind of material has the optical signature of multipotency band absorption thus achieves wide spectral solar absorption.
Fig. 1 schematically shows the flow chart of multipotency band solar absorptive material preparation method according to the preferred embodiment of the invention.
As shown in Figure 1, multipotency band solar absorptive material preparation method comprises according to the preferred embodiment of the invention:
First step S1: according to In
2-xni
xs
3stoichiometric proportion reaction raw materials is prepared burden; Preferably, x=0.02,0.05,0.1,0.15,0.2.Such as, reaction raw materials can be simple substance element or binary compound.
Second step S2: reaction raw materials is placed in quartz glass tube, vacuumizes quartz glass tube, is preferably filled with argon gas subsequently to quartz glass tube, again vacuumizes quartz glass tube subsequently, after this by the quartz glass seal of tube; Preferably, by effective for quartz glass oxyhydrogen flame sealing by fusing; Preferably, the internal diameter of quartz glass tube is 10mm.Can vacuumize-be filled with the cycling of argon gas-vacuumize by multiple exercise, such as three times the least possible to guarantee managing interior oxygen content.
Third step S3: the quartz glass tube of sealing is put into sintering furnace (such as, temperature programmed control Muffle furnace) in, slowly be warming up to first object temperature to carry out sintering and to be incubated for first scheduled time, then make quartz glass tube be cooled to room temperature with Muffle furnace; Preferably, first object temperature is 800 DEG C.Preferably, described first scheduled time is 48 hours.
4th step S4: open quartz glass tube, the sample taking out reaction raw materials formation from quartz glass tube grinds; Such as, grind in agate mortar;
5th step S5: the sample after grinding again Vacuum Package is sintered to obtain target powder sample in quartz glass tube.Target powder sample can be used for for test and characterizes.Preferably, 5th step S5 comprises: by the sample after grinding again Vacuum Package in quartz glass tube, the quartz glass tube of sealing is put into sintering furnace (such as, temperature programmed control Muffle furnace) in, slowly be warming up to the second target temperature (such as 800 DEG C) to carry out sintering and to be incubated second scheduled time (such as 48 hours), then make quartz glass tube be cooled to room temperature with sintering furnace.
In sum, the bright material provided of this law has multipotency bandwidth spectrum solar absorption ability, and preparation method is simple, and raw material safety, is conducive to being applied to photovoltaic cell field.
The preferred embodiments of the present invention will be specifically described below.
Embodiment 1
Adopt In grain (99.999%), S powder (99.999%), Ni powder (99.99%) is according to In
2-xni
xs
3(x=0,0.02,0.05,0.1,0.15,0.2) stoichiometric proportion weighs, reaction raw materials is placed in quartz glass tube (internal diameter 10mm),-applying argon gas-vacuum pumping (three times, guarantee to manage interior oxygen content the least possible) is vacuumized, by effective for quartz glass oxyhydrogen flame sealing by fusing to it.The quartz glass tube of sealing by fusing is put into temperature programmed control Muffle furnace, and be slowly warming up to target temperature 800 DEG C and be incubated 48 hours, final sample cools to room temperature with the furnace.Open quartz ampoule and ground in agate mortar by gained sample, Vacuum Package again, again sinter target temperature 800 DEG C and be incubated 48 hours, sample cools to room temperature with the furnace.In agate mortar, grinding obtains target powder sample, for test and sign.
Embodiment 2
Adopt In
2s
3powder (99.9%) and NiS powder (99.9%) binary compound, S powder (99.99%) is according to In
2-xni
xs
3(x=0,0.02,0.05,0.1,0.15,0.2) stoichiometric proportion weighs, and grind in agate mortar, subsequently reaction raw materials is placed in quartz glass tube (internal diameter 10mm) ,-applying argon gas-vacuum pumping (three times is vacuumized to it, guarantee to manage interior oxygen content the least possible), by effective for quartz glass oxyhydrogen flame sealing by fusing.The quartz glass tube of sealing by fusing is put into temperature programmed control Muffle furnace, and be slowly warming up to target temperature 800 DEG C and be incubated 48 hours, final sample cools to room temperature with the furnace.Open quartz ampoule and ground in agate mortar by gained sample, Vacuum Package again, again sinter target temperature 800 DEG C and be incubated 48 hours, sample cools to room temperature with the furnace.In agate mortar, grinding obtains target powder sample, for test and sign.
Embodiment 3
Adopt In grain (99.999%), S powder (99.999%) is according to In
2s
3stoichiometric proportion weigh batching.Initial reaction raw material is placed in the effective oxyhydrogen flame sealing by fusing of quartz glass, grinds also again sealing by fusing sintering and obtain binary compound In after 800 DEG C of sintering
2s
3.Adopt the In prepared voluntarily
2s
3binary compound, S powder (99.99%), Ni powder (99.99%) is according to In
2-xni
xs
3(x=0,0.02,0.05,0.1,0.15,0.2) stoichiometric proportion weighs, and grind in agate mortar, subsequently reaction raw materials is placed in quartz glass tube (internal diameter 10mm) ,-applying argon gas-vacuum pumping (three times is vacuumized to it, guarantee to manage interior oxygen content the least possible), by effective for quartz glass oxyhydrogen flame sealing by fusing.The quartz glass tube of sealing by fusing is put into temperature programmed control Muffle furnace, and be slowly warming up to target temperature 800 DEG C and be incubated 48 hours, final sample cools to room temperature with the furnace.Open quartz ampoule and ground in agate mortar by gained sample, Vacuum Package again, again sinter target temperature 800 DEG C and be incubated 48 hours, sample cools to room temperature with the furnace.In agate mortar, grinding obtains target powder sample, for test and sign.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the term " first " in specification, " second ", " the 3rd " etc. describe only for distinguishing each assembly, element, step etc. in specification, instead of for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a multipotency band solar absorptive material, is characterized in that: described multipotency band solar absorption semi-conducting material is chemical general formula is In
2-xni
xs
3compound, wherein 0 < x < 2.
2. multipotency band solar absorptive material according to claim 1, is characterized in that, the value of x is one in 0.02,0.05,0.1,0.15 and 0.2.
3. multipotency band solar absorptive material according to claim 1 and 2, is characterized in that, the matrix semiconductors compound of described multipotency band solar absorption semi-conducting material is In
2s
3binary compound, the part In atom of parent compound is replaced by Ni atom.
4. multipotency band solar absorptive material according to claim 1 and 2, is characterized in that, the doping content of transition group atom Ni is between 2at%-10at%.
5. multipotency band solar absorptive material according to claim 1 and 2, is characterized in that, 3d electronics splitting in crystalline field of transition group atom Ni produces interstitial impurity and can be with, and has multipotency band solar absorption ability.
6. a multipotency band solar absorptive material preparation method, is characterized in that comprising:
First step: according to In
2-xni
xs
3stoichiometric proportion reaction raw materials is prepared burden, wherein 0 < x < 2;
Second step: reaction raw materials is placed in quartz glass tube, vacuumizes quartz glass tube, after this by the quartz glass seal of tube;
Third step: the quartz glass tube of sealing is put into sintering furnace, is warming up to first object temperature to carry out sintering and to be incubated for first scheduled time, then makes quartz glass tube be cooled to room temperature with sintering furnace;
4th step: open quartz glass tube, the sample taking out reaction raw materials formation from quartz glass tube grinds;
5th step: the sample after grinding again Vacuum Package is sintered to obtain target powder sample in quartz glass tube.
7. multipotency band solar absorptive material preparation method according to claim 6, is characterized in that, the value of x is one in 0.02,0.05,0.1,0.15 and 0.2.
8. the multipotency band solar absorptive material preparation method according to claim 6 or 7, it is characterized in that, first object temperature is 800 DEG C, and described first scheduled time is 48 hours.
9. the multipotency band solar absorptive material preparation method according to claim 6 or 7, it is characterized in that the 5th step comprises: by the sample after grinding again Vacuum Package in quartz glass tube, the quartz glass tube of sealing is put into sintering furnace, slowly be warming up to the second target temperature to carry out sintering and to be incubated for second scheduled time, then make quartz glass tube be cooled to room temperature with sintering furnace.
10. the multipotency band solar absorptive material preparation method according to claim 6 or 7, it is characterized in that, the second target temperature is 800 DEG C, and second scheduled time was 48 hours.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784067A (en) * | 2016-12-14 | 2017-05-31 | 上海电机学院 | A kind of wide spectrum solar absorption semiconductor and preparation method thereof |
| CN108091710A (en) * | 2017-12-13 | 2018-05-29 | 上海电机学院 | A kind of Intermediate Gray solar absorption semiconductor and preparation method thereof |
| CN110422873A (en) * | 2019-07-08 | 2019-11-08 | 上海电机学院 | A kind of AgGaS2Carrying semiconductor material and preparation method thereof among base |
| CN110422874A (en) * | 2019-07-31 | 2019-11-08 | 上海电机学院 | A kind of indium sulfide base impurity band semiconductor and its preparation method and application |
| US10661255B2 (en) * | 2016-06-20 | 2020-05-26 | Guangdong University Of Technology | Short channel ordered mesoporous carbon loaded indium cobalt sulfide and indium nickel sulfide ternary composite photocatalyst, the preparation method thereof and the use thereof |
| CN111233029A (en) * | 2020-03-11 | 2020-06-05 | 鄂尔多斯应用技术学院 | Cr-doped In2S3Intermediate belt material and preparation method thereof |
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