CN105470169A - GaN-device-oriented dielectric growing system and operating method thereof - Google Patents
GaN-device-oriented dielectric growing system and operating method thereof Download PDFInfo
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- CN105470169A CN105470169A CN201510809602.6A CN201510809602A CN105470169A CN 105470169 A CN105470169 A CN 105470169A CN 201510809602 A CN201510809602 A CN 201510809602A CN 105470169 A CN105470169 A CN 105470169A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
- C23C16/0263—Irradiation with laser or particle beam
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Abstract
The invention discloses a GaN-device-oriented dielectric growing system and an operating method thereof. According to the embodiment, the dielectric growing system comprises a remote plasma modification system, at least one of a low-pressure chemical vapor deposition (LPCVD) system and an atomic layer deposition (ALD) system, and a clustering closed transmission system. To be specific, the remote plasma modification system is used for carrying out modification processing on a surface of a GaN mateiral surface on a wafer; the at least one of the LPCVD system and the ALD system is used for deposing one or more dielectric layers on the surface of the GaN matrial after the modificiation processing; and the clustering closed transmission system in airtight communication with the remote plasma modification system and the at least one of the LPCVD system and the ALD system is used for transmitting the wafer to the at least one of the LPCVD system and the ALD system from the remote plasma modification system.
Description
Technical field
Disclosure relate generally to semiconductor manufacturing, more specifically, relates to a kind of dielectric growth system towards gallium nitride (GaN) device and method of operation thereof.
Background technology
At third generation semiconductor gallium nitride (GaN) device fabrication arts, interfacial state problem is the common problem of long-standing problem industry, is that gallium nitride electronic device develops difficult point in the urgent need to address and bottleneck.In order to solve this GaN difficulties of interfacial state, domestic and international researcher has carried out the exploration of various ways, mainly concentrates on the aspect such as dielectric growth mode and dielectric front surface preliminary treatment.But because all Alternatives are distributed in different uniterm systems, there is the pollution problems such as the oxidation in technique linking or transfer process thus.In addition, the problem worse device interfaces states such as the excessive or reaction of the energy of plasma of surface preparation is residual, to device performance and reliability totally unfavorable.
Summary of the invention
Object of the present disclosure is to provide a kind of dielectric growth system towards gallium nitride (GaN) device and method of operation thereof at least in part
According to an aspect of the present disclosure, provide a kind of dielectric growth system towards gallium nitride (GaN) device, comprising: remote plasma modification system, for the GaN material modifying surface process on wafer; In low-pressure chemical vapor phase deposition (LPCVD) system and atomic layer deposition (ALD) system one of at least, at the one or more dielectric layer of deposit on the surface of the GaN material through modification; And a collection bunch formula closes transfer system, with one of at least air tight communication in remote plasma modification system and described LPCVD system and ALD system, for wafer to be sent to described LPCVD system and ALD system one of at least from remote plasma modification system.
According to embodiment, a collection bunch formula is closed transfer system and can be comprised: air tight housing; Be located at the movable mechanical arm in cavity; Be located at the sheet holder of movable mechanical arm front end, supported by movable mechanical arm; Be located at the loading stage in cavity, be configured to wafer is loaded in sheet holder; And the multiple Transfer pipes to be communicated with cavity, respectively with one of at least air tight communication in described LPCVD system and ALD system, wherein, movable mechanical arm is configured to can be movable thus stretch into or exit each Transfer pipe.
According to embodiment, in Transfer pipe and remote plasma modification system, described LPCVD system and ALD system one of at least between can be provided with the controlled airtight valve of opening and closing.
According to embodiment, this system can also comprise the vacuum pump or source nitrogen that are communicated with inside cavity.
According to embodiment, the slide holder of remote plasma modification system can have the heating function that temperature is up to 500 DEG C.
According to embodiment, remote plasma modification system can adopt Hall type plasma.
According to another aspect of the present disclosure, provide a kind of method operating the above-mentioned dielectric growth system towards GaN device, comprising: the wafer being provided with GaN material is put into a collection bunch formula and close transfer system; Collection bunch formula is closed in transfer system the vacuum environment of being pumped into certain pressure, or be filled with the nitrogen of certain pressure after the environment that is evacuated; Close transfer system by a collection bunch formula, wafer is sent into remote plasma modification system, with to the GaN material modifying surface process on wafer; And close transfer system by a collection bunch formula, wafer is taken out from remote plasma modification system, and to send into successively in described LPCVD system and ALD system one of at least, with at the one or more dielectric layer of deposit on the surface of the GaN material through modification.
According to embodiment, when by described LPCVD system dielectric layer deposited, deposition temperature can between 600 DEG C ~ 850 DEG C; When by described ALD system dielectric layer deposited, deposition temperature can between 90 DEG C ~ 500 DEG C.
According to embodiment, when carrying out surface modification treatment, the slide holder of load wafer can be heated to 150 DEG C ~ 500 DEG C.
According to embodiment, the method can also comprise: when remote plasma modification system, LPCVD system and ALD system work alone, and makes remote plasma modification system, LPCVD system and ALD system and a collection bunch formula close transfer system isolated; And when being sent into by wafer in remote plasma modification system, LPCVD system or ALD system or therefrom take out wafer, making collection bunch formula close, transfer system is corresponding with sending into remote plasma modification system, LPCVD system or the ALD system that maybe will take out wafer is communicated with.
According to embodiment, the method can also comprise: vacuumize this dielectric growth system or be filled with nitrogen wherein, a collection bunch formula is closed in transfer system, remote plasma modification system and described LPCVD system and ALD system and one of at least reaches same chamber pressure.
According to embodiment of the present disclosure, the surface modification of the high all even low damage in GaN material surface can be realized by remote plasma modification system, the high growth temperature of such as passivation layer medium can be realized by LPCVD deposition system, the high-quality growth of such as gate dielectric layer can be realized by ALD deposition system, can transmit in environment in anaerobic and shift between various process system, effectively avoid the problems such as the oxidation of material surface, carbonization, soda acid contamination.Like this, totally enclosed multipurpose medium preparation system can be realized, for realizing the interface state dielectric growth towards GaN device, boost device performance and reliability.
Accompanying drawing explanation
By referring to the description of accompanying drawing to disclosure embodiment, above-mentioned and other objects of the present disclosure, feature and advantage will be more clear, in the accompanying drawings:
Fig. 1 is the block diagram of the dielectric growth system towards gallium nitride (GaN) device diagrammatically illustrated according to disclosure embodiment;
Fig. 2 diagrammatically illustrates the vertical view closing transfer system according to the collection bunch formula of disclosure embodiment;
Fig. 3 diagrammatically illustrates the partial cross section figure of the dielectric growth system towards GaN device according to disclosure embodiment;
Fig. 4 (a) is the flow chart of the method for the operating procedure integrated platform diagrammatically illustrated according to disclosure embodiment; And
Fig. 4 (b) illustrates in greater detail the operation 405 in Fig. 4 (a).
Embodiment
Below, with reference to the accompanying drawings embodiment of the present disclosure is described.But should be appreciated that, these describe just exemplary, and do not really want to limit the scope of the present disclosure.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present disclosure.
Various structural representations according to disclosure embodiment shown in the drawings.These figure not draw in proportion, wherein in order to the object of clear expression, are exaggerated some details, and may eliminate some details.
Fig. 1 is the block diagram of the dielectric growth system towards gallium nitride (GaN) device diagrammatically illustrated according to disclosure embodiment.
As shown in Figure 1, the dielectric growth system 10 of this embodiment can comprise towards technology processing system such as remote plasma modification system 11, low-pressure chemical vapor phase deposition (LPCVD) system 13 and atomic layer deposition (ALD) system 15 of GaN device and the closed transfer system 100 of collection bunch formula (cluster) for transmitting wafer between these technology processing systems.At this, so-called " collection bunch formula ", refers to the multisystem combining form around central transmission cavity layout.
Remote plasma modification system 11 may be used for the process of GaN material modifying surface.At this, after so-called " long-range " refers to plasma generation, be transported to the reaction surface (that is, GaN material surface) of target devices through space.Using plasma can be Hall type plasma, and namely plasma is through the rear plasma launched of Hall magnetic field deflection, and this type of gas ions has the uniform feature of energy height.In addition, the reaction surface (that is, the slide holder that the wafer carrying GaN material is located at) of employing can have high-temperature heating function, and temperature reaches as high as 500 DEG C, such as, be heated to about 150 DEG C ~ 500 DEG C.So, high even low injured surface preliminary treatment can be realized.
LPCVD system 13 and ALD system 15 separately all can at the one or more dielectric layers of deposit on the surface of the GaN material through modification.Such as, LPCVD system 13 can at GaN material surface deposition interface state passivation dielectric layer, and the deposition temperature realizing interface state medium can between 600 DEG C ~ 850 DEG C; ALD system 15 can at GaN material surface deposition interface state gate dielectric layer, and the deposition temperature realizing interface state medium can between 90 DEG C ~ 500 DEG C.。
Collection bunch formula closes transfer system 100 and each technology processing system (11,13, the 15) air tight communication in system 10, thus can be formed in system 10 one with the airtight cavity environment of the airtight isolation in the external world (such as, anaerobic or be filled with non-reactive gas as nitrogen).This collection bunch formula is closed transfer system 100 and is comprised conveyer (such as, following mechanical arm), thus wafer (such as, GaN material is the material layer on wafer, or wafer itself is GaN wafer) under this airtight cavity environment, another process system can be sent to from a kind of technology processing system.Below, transfer system 100 will be closed to this collection bunch formula to describe in further detail.
Although figure 1 illustrates three kinds of technology processing systems (11,13,15), the disclosure is not limited thereto.Such as, dielectric growth system 10 can also comprise other technology processing systems such as etching apparatus (as, sense coupling equipment), other deposition apparatus (e.g., plasma enhancing atomic force deposition apparatus) or annealing furnace (quick anneal oven) etc.In addition, the one or more technology processing systems shown in Fig. 1 can omit, and such as dielectric growth system 10 can only include a kind of deposition system in LPCVD system 13 and ALD system 15.
Fig. 2 diagrammatically illustrates the vertical view closing transfer system according to the collection bunch formula of disclosure embodiment.
As shown in Figure 2, this collection bunch formula is closed transfer system 100 and can be comprised the air tight housing 103 limited by chamber wall 101.Chamber wall 101 can comprise various suitable material, as steel.In order to access is outside in external reference cavity or in cavity, chamber wall 101 can have multiple opening (such as, 115-1,115-2,115-3,117 and 119).In order to ensure the air-tightness of cavity 103, these openings can be provided with airtight valve.Alternatively, when opening is connected to other equipment, airtight valve can be set at other equipment and this opening joint.Preferably, airtight valve is equipped with at opening and other equipment places.The opening and closing of these airtight valves controls by control signal.Such as, valve can with driving mechanism, and driving mechanism can drive valve closure or openness.Suitable electric control signal can be provided, to need to drive valve according to equipment operating to driving mechanism.
In cavity 103, mobilizable mechanical arm 105 can be provided with.Such as, mechanical arm 105 can rotate around axle 107 in cavity 103.Certainly, the activity of mechanical arm 105 is not limited to rotate, and mechanical arm 105 also can carry out the motions (such as, together with axle 107 translation) such as translation.In addition, mechanical arm 105 can also stretch, and namely changes the length that it extends from axle 107.There is multiple such telescoping mechanism, do not repeat them here.Show in phantom in Fig. 2 and to rotate relative to the mechanical arm 105 shown in solid line and mechanical arm after extending.In the front end of mechanical arm 105, sheet holder 109 can be provided with.Sheet holder 109 may be used for placing pending wafer 111 (such as, GaN wafer).Sheet holder 109 can be integrally formed with mechanical arm 105.
In cavity 103, loading stage 113 can also be provided with.Loading stage 113 can be placed with multiple pending wafer 111, and wafer 111 can be loaded into one by one in sheet holder 109 (making the wafer load maintainer of sheet holder 109 and loading stage 113 to punctual when mechanical arm 105 turns to).In addition, after the processing of wafers in sheet holder 119, by wafer feel trim actuator, wafer can be unloaded in wafer rack from sheet holder 119.Wafer feel trim actuator can be implemented in such as loading stage 113 together with wafer load maintainer, or wafer feel trim actuator can be separated realization with loading stage 113.The load/unload of wafer can be controlled by control signal.There is multiple such wafer load/unload mechanism, do not repeat them here.
In order to put into pending wafer and take out from loading stage (or from being separated the wafer rack realized) wafer be disposed in loading stage, the position that can correspond at chamber wall 101 arranges wafer channel 117.As mentioned above, the controlled airtight valve of opening and closing can be set at wafer channel 117 place.When needs are put into wafer to loading stage or take out wafer from loading stage, airtight valve can be controlled and open, and during wafer is processed, airtight valve can be controlled and close.
This collection bunch formula closes transfer system 100 can also comprise multiple Transfer pipe 115-1,115-2 and 115-3 of being communicated with cavity 103.These Transfer pipes can be connected to different technology processing systems, such as, and above-mentioned remote plasma modification system 11, LPCVD system 13 and ALD system 15 etc.In fig. 2, these Transfer pipes are depicted as the opening on chamber wall 101.But the disclosure is not limited thereto.Such as, Transfer pipe can also stretch out from chamber wall 101 (such as, in pipe-like), to be connected to the process equipment compared with distant positions place.Transfer pipe itself is also bubble-tight, to avoid destroying the airtight environment in cavity 103.
Although it is pointed out that in Fig. 2 at this and three Transfer pipes have been shown, the Transfer pipe of more or less (such as, 2) can be comprised.
The atmosphere passage 119 on chamber wall 101 is also show in Fig. 2.This atmosphere passage 119 can be used for the required atmosphere (such as, vacuum or non-reactive gas) guaranteed in cavity 103.Such as, atmosphere passage 119 can be connected to vacuum pump, to be vacuumized in cavity 103 by vacuum pump; Or atmosphere passage 119 can be connected to source nitrogen, to be filled with nitrogen by cavity 103.This vacuum pump or source nitrogen can be closed transfer system 100 with a collection bunch formula and be wholely set, such as, invest on chamber wall 101.Atmosphere passage 119 place even can not arrange airtight valve, even if or arrange airtight valve also can stay open during to processing of wafers, so that vacuum pump can continue vacuumizing in cavity 103 or continuing to be filled with nitrogen in cavity 103.
In addition, this collection bunch formula closes transfer system 100 can also comprise control device (not shown), in order to control each building block.Such as, control device can comprise microprocessor, memory and input-output apparatus etc.Microprocessor can generate control signal, to control each parts carrying out suitable action according to the program stored in memory or code segment.According to the conventional process of institute's application, some routines can be worked out, are stored in memory.Input-output apparatus can make operator can input instruction (such as to control device, programming or the selected routine prestored), and export relevant information (such as, current device state, operation stage, abnormal alarm etc.) to operator.Such input-output apparatus is such as touch-screen.
Alternatively, this collection bunch formula closes transfer system 100 can comprise control interface (not shown), for being connected with external control devices (such as, all-purpose computer).Control interface can to close in transfer system 100 each action component (such as with a collection bunch formula, mechanical arm, airtight valve, loading stage, vacuum pump or source nitrogen etc.) drive unit be connected, to drive these parts to carry out corresponding action (start/stop etc. of the On/Off of such as, the rotation/flexible of mechanical arm, airtight valve, the wafer loading/resonance of loading stage, vacuum pump or source nitrogen).
According to embodiment of the present disclosure, can arrange unified system control panel for dielectric growth system 10, this system control panel can each parts (11,13,15,100) in control medium growing system 10.
Fig. 3 diagrammatically illustrates the partial cross section figure of the dielectric growth system according to disclosure embodiment.
As shown in Figure 3, this technique integrated platform 20 can comprise a collection bunch formula and close transfer system, and a collection bunch formula closes transfer system 100 as above described in conjunction with Figure 2.It is to be noted at this, the sectional view of Fig. 3 not with the vertical view with Fig. 2 one to one mode draw, but for convenience's sake, only diagrammatically illustrate the section components (same parts represents with same tag) that collection bunch formula closes transfer system 100.Transfer system 100 is closed about this collection bunch formula, can see the description of above composition graphs 2.
This dielectric growth system 20 can also comprise process equipment 200.As mentioned above, process equipment 200 can comprise etching apparatus (as, sense coupling equipment), deposition apparatus (as, plasma enhancing atomic force deposition apparatus) or annealing furnace (quick anneal oven) etc., such as above-mentioned remote plasma modification system 11, LPCVD system 13 and ALD system 15.The slide glass cavity 203 that process equipment 200 can comprise the main cavity 201 for carrying out PROCESS FOR TREATMENT and be communicated with main cavity.By slide glass cavity 203, in main cavity 201, load pending wafer or from main cavity 201, take out the wafer be disposed.This process equipment can have various ways, does not repeat them here.
A collection bunch formula is closed transfer system 100 and can be connected to process equipment 200 (particularly, being connected to slide glass cavity 203) by Transfer pipe 115-3.At Transfer pipe 115-3 place, airtight valve 121 can be provided with.Such as, under the state that airtight valve at each Transfer pipe place is closed, mechanical arm 105 from alignment with loading stage 113 (therefrom loading pending wafer) or in alignment with another Transfer pipe place (taking out the wafer be disposed in this process equipment from the process equipment be connected with this another Transfer pipe), can rotate in alignment with Transfer pipe 115-3.Then, airtight valve 121 can be opened, thus mechanical arm 105 can extend through Transfer pipe 115-3, the pending wafer 111 be placed in sheet holder is sent into the slide glass cavity 203 of process equipment 200.In slide glass cavity 203, wafer 111 can be loaded on the sheet holder (not shown) of process equipment 200, process to send into main cavity 201, such as surface treatment, etching, deposit or annealing.When processing, mechanical arm 105 can be retracted in cavity 103, and airtight valve 121 can be closed.After pending, airtight valve 121 can be opened, and mechanical arm 105 can stretch in slide glass cavity 203 again, with wafer 111 treated in the sheet holder of receiving process equipment 200, and is contracted in cavity 103.Then, airtight valve 121 can be closed.Afterwards, mechanical arm 105 can rotate, treated wafer (through another Transfer pipe) is sent into another process equipment to carry out another PROCESS FOR TREATMENT, or send into loading stage to take out (that is, complete to processing of wafers in this integrated technique platform).In this process, in cavity 103, oxygen-free atmosphere can be kept, such as, by vacuumizing cavity 103 or be filled with nitrogen in cavity 103 always always always.
The situation at Transfer pipe 115-3 place is diagrammatically illustrated in Fig. 3.The situation of other Transfer pipes as places such as 115 and 115-2 is similar.
Although it is pointed out that at this circular trace showing mechanical arm 105 in fig. 2 with chain-dotted line, the disclosure is not limited thereto.Such as, the slewing area of mechanical arm 105 can be not whole circumference, but a part for circumference, or some ad-hoc locations (position such as, aimed at loading stage and each Transfer pipe) can be turned to.
Fig. 4 (a) diagrammatically illustrates according to the operating surface of the disclosure embodiment flow chart to the method for the dielectric growth system of GaN device.
Below, by composition graphs 1 ~ 3, the method 400 is made an explanation.
Particularly, as shown in Fig. 4 (a), in operation 401, wafer can be sent in this system, to process.Particularly, wafer can be put into a collection bunch formula and close transfer system 100, be placed on loading stage.Such as, with reference to figure 2, wafer channel 117 can be opened, pending (multiple) wafer is placed on loading stage 113.
Then, in operation 403, can closed cavity, and make in cavity, to become required atmosphere, such as substantial anaerobic state.Such as, wafer channel 117 and Transfer pipe 115-1,115-2 and 115-3 can be closed (such as, by closing the airtight valve that these passages are arranged), then through atmosphere passage 119, will the vacuum state (passing through vacuum pump) of certain pressure be pumped in cavity 103 or after the environment that is evacuated, be filled with the nitrogen (passing through source nitrogen) of certain pressure.
In addition, each process equipment (11,13,15) in dielectric growth system 10 also can vacuumize or inflated with nitrogen, makes each parts in dielectric growth system 10 (11,13,15,100) can arrive identical chamber pressure.Like this, subsequently when by members (particularly a collection bunch formula being closed transfer system to be communicated with each process equipment), stable operation can be realized.
Then, in operation 405, transfer system can be closed by a collection bunch formula, successively wafer be sent into each process equipment to process.Particularly, the wafer on loading stage can be loaded in sheet holder, then by mechanical arm, the wafer that sheet holder loads can be sent into each process equipment successively, to carry out respective handling.In the example depicted in fig. 1, first wafer can be sent in remote plasma modification system 11, with to the GaN material modifying surface process on wafer; And then wafer is sent into LPCVD system or ALD system so that in the GaN material through surface modification treatment dielectric layer deposited.
Fig. 4 (b) illustrates in greater detail the operation 405 in Fig. 4 (a).
As shown in Fig. 4 (b), in operation 4051, mechanical arm can rotate to Transfer pipe, and the airtight valve that can control this Transfer pipe place is opened.Such as, see Fig. 3, mechanical arm 105 can rotate to aligning Transfer pipe 115-3, and airtight valve 121 can be opened.
Then, in operation 4053, mechanical arm can pass sheet to process equipment (11,13,15), and retracts, and closes airtight valve.Such as, mechanical arm 105 can stretch in the slide glass cavity 203 of process equipment 200, wafer 111 is passed the sheet holder of sheet to process equipment 200, then retraction cavity 103, and closes airtight valve 121.
Then, in operation 4055, process equipment can process wafer.Such as, wafer 111 can be sent in the main cavity 201 of process equipment 200, to process it, and such as surface treatment, deposit etc.
Then, in operation 4057, can open airtight valve, mechanical arm can stretch into process equipment contact pin, and retracts.Such as, can open airtight valve 121, mechanical arm 105 stretches in the slide glass cavity 203 of process equipment 200, is received in the wafer 111 be disposed in process equipment 200, and cavity 103 of retracting interior (wafer 111 being taken back in cavity 103), then close airtight valve 121.
In addition, after taking out wafer from each process equipment, chamber pressure can be recovered.Such as, transfer system 100 be still pumped into the vacuum state of certain pressure or after the environment that is evacuated, be filled with the nitrogen of certain pressure.
Carried out process in all process equipments of wafer in this system after, mechanical arm can turn to loading stage, was unloaded on loading stage by wafer, to take out.
In one example, utilize dielectric growth system of the present invention, the thickness of interface oxygenous layer can be suppressed at below 1nm.And in common process, the thickness of interface oxygenous layer can at 3 ~ 6nm.In addition, by the surface treatment of remote hall plasma high-temperature, interface roughness can be suppressed at about 0.92nm; And not using the surface treatment of remote hall plasma high-temperature, interface roughness will at about 3.15nm.
Above embodiment of the present disclosure is described.But these embodiments are only used to the object illustrated, and are not intended to limit the scope of the present disclosure.The scope of the present disclosure is by claims and equivalents thereof.Do not depart from the scope of the present disclosure, those skilled in the art can make multiple substituting and amendment, and these substitute and amendment all should fall within the scope of the present disclosure.
Claims (11)
1., towards a dielectric growth system for gallium nitride GaN device, comprising:
Remote plasma modification system, for the GaN material modifying surface process on wafer;
In low-pressure chemical vapor phase deposition LPCVD system and atomic layer deposition ALD system one of at least, at the one or more dielectric layer of deposit on the surface of the GaN material through modification; And
A collection bunch formula closes transfer system, with one of at least air tight communication in remote plasma modification system and described LPCVD system and ALD system, for being sent to described LPCVD system and ALD system one of at least by wafer from remote plasma modification system.
2. the dielectric growth system towards GaN device according to claim 1, wherein, a collection bunch formula is closed transfer system and is comprised:
Air tight housing;
Be located at the movable mechanical arm in cavity;
Be located at the sheet holder of movable mechanical arm front end, supported by movable mechanical arm;
Be located at the loading stage in cavity, be configured to wafer is loaded in sheet holder; And
The multiple Transfer pipes be communicated with cavity, respectively with one of at least air tight communication in described LPCVD system and ALD system,
Wherein, be configured to can be movable thus stretch into or exit each Transfer pipe for movable mechanical arm.
3. the dielectric growth system towards GaN device according to claim 2, wherein, in Transfer pipe and remote plasma modification system, described LPCVD system and ALD system one of at least between be provided with the controlled airtight valve of opening and closing.
4. the dielectric growth system towards GaN device according to claim 2, also comprises: the vacuum pump be communicated with inside cavity or source nitrogen.
5. the dielectric growth system towards GaN device according to claim 1, wherein, the slide holder of remote plasma modification system has the heating function that temperature is up to 500 DEG C.
6. the dielectric growth system towards GaN device according to claim 1, wherein, remote plasma modification system adopts Hall type plasma.
7. a method for the dielectric growth system towards GaN device of operation according to any one of claim 1 ~ 6, comprising:
The wafer being provided with GaN material is put into a collection bunch formula and close transfer system;
Collection bunch formula is closed in transfer system the vacuum environment of being pumped into certain pressure, or be filled with the nitrogen of certain pressure after the environment that is evacuated;
Close transfer system by a collection bunch formula, wafer is sent into remote plasma modification system, with to the GaN material modifying surface process on wafer; And
Close transfer system by a collection bunch formula, wafer is taken out from remote plasma modification system, and to send into successively in described LPCVD system and ALD system one of at least, with at the one or more dielectric layer of deposit on the surface of the GaN material through modification.
8. method according to claim 7, wherein, when by described LPCVD system dielectric layer deposited, deposition temperature is between 600 DEG C ~ 850 DEG C; When by described ALD system dielectric layer deposited, deposition temperature is between 90 DEG C ~ 500 DEG C.
9. method according to claim 7, wherein, when carrying out surface modification treatment, is heated to 150 DEG C ~ 500 DEG C by the slide holder of load wafer.
10. method according to claim 7, also comprises:
When remote plasma modification system, LPCVD system and ALD system work alone, remote plasma modification system, LPCVD system and ALD system and a collection bunch formula is made to close transfer system isolated; And
When being sent into by wafer in remote plasma modification system, LPCVD system or ALD system or therefrom take out wafer, collection bunch formula is closed, and transfer system is corresponding with sending into remote plasma modification system, LPCVD system or the ALD system that maybe will take out wafer is communicated with.
11. methods according to claim 7, wherein, the method also comprises: vacuumize this dielectric growth system or be filled with nitrogen wherein, a collection bunch formula is closed in transfer system, remote plasma modification system and described LPCVD system and ALD system and one of at least reaches same chamber pressure.
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