CN105469914B - It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force - Google Patents

It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force Download PDF

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Publication number
CN105469914B
CN105469914B CN201510797401.9A CN201510797401A CN105469914B CN 105469914 B CN105469914 B CN 105469914B CN 201510797401 A CN201510797401 A CN 201510797401A CN 105469914 B CN105469914 B CN 105469914B
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electrode
field
ground electrode
electric field
thin
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CN105469914A (en
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尹朋博
胡伟
谢雄杰
许佐明
罗晓庆
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B19/00Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009Forming specific nanostructures
    • B82B3/0028Forming specific nanostructures comprising elements which are movable in relation to each other, e.g. slidable or rotatable
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/008Processes for improving the physical properties of a device

Abstract

The device that nano-particle is orientated in thin-film material, including the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are driven using electric field force the invention provides a kind of;First high-field electrode and the first ground electrode composition first electrode arranged in parallel;Second high-field electrode and the second ground electrode also composition second electrode arranged in parallel;First electrode and second electrode arrangement symmetrical above and below.The present invention provides a kind of device that nano-particle orientation in thin-film material is driven using electric field force, utilize the boundary electric field of plate electrode, positive/negative plate is staggered, electric field of the direction of an electric field parallel to electrode surface, and upper bottom crown symmetric arrays, make the depth of parallelism of electric field higher, thin-film material is placed in sample room, will be by the electric field parallel to electrode surface, i.e. parallel to thin-film material length direction, the apparatus structure is simple, cheap, is studied available for laboratory science, also available for film with high orientation degree industrial production.

Description

It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force
Technical field
The present invention relates to the nano modification technical field of thin-film material, and in particular to one kind utilizes electric field force driving film material The device that nano-particle is orientated in material.
Background technology
The dispersity of nano-particle directly determines the performance of nano composite material, and numerous experts and scholars, which study, finds nanometer Particle directional profile can cause composite to possess extremely excellent optical property, mechanical performance and electrical property in particular directions Can, these performances be common nano composite material it is incomparable.To reach this purpose, traditionally use and be machined into The method of type, i.e. material are cooled and shaped in the presence of shear stress or tensile stress, and this method has obtained widely should With.For recent two decades with the development of technology, electric field force is increasingly becoming another new particle after flow orientation and stretching orientation The method of orientation, numerous foreign study persons impose DC electric field or AC field into the polymer of molten state, realize nanometer Particle, such as CNT, ceramic particle, graphite microchip, montmorillonite etc., the orientation in polymeric matrix, and measure analysis New material it is each to performance.
Such as the patent of No. 13 announcements of in August, 2012 " is used for the dress of electric field induction montmorillonite orientations in polyethylene Put and method " (Patent No. 102831992), describe electric field induced orientation device.Wherein Top electrode connects high pressure, and bottom electrode connects Ground, two electrodes are positioned opposite, thin-film material as upper/lower electrode among, therefore the electric field force direction in material suffered by nano-particle For parallel thickness direction.But to solve the problem in experiment and engineering, many situations are it is desirable that parallel to thin-film material The electric field of length direction, and prior art device is all mainly field parallel in thickness direction.
The content of the invention
In order to meet the needs of prior art, the invention provides one kind to utilize nanoparticle in electric field force driving thin-film material The device of son orientation.
The technical scheme is that:
Described device includes the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
First high-field electrode and the first ground electrode the composition first electrode arranged in parallel;Second high-field electrode and Two ground electrodes also composition second electrode arranged in parallel;The first electrode and second electrode arrangement symmetrical above and below;
First high-voltage motor is connected with the first ground electrode using mortise and tenon formula, the second high-voltage motor and the second ground electricity Pole is also connected using mortise and tenon formula.
Preferably, first high-field electrode and the second high-field electrode are semicircle copper plate;The semicircle red copper The bonding jumper being equally spaced is provided with the middle part of plate;High-pressure stage is equipped with first high-field electrode and the second high-field electrode Leading-out terminal;
First ground electrode and the second ground electrode are also semicircle copper plate;Set in the middle part of the semicircle copper plate It is equipped with the bonding jumper being equally spaced;Ground electrode leading-out terminal is equipped with first ground electrode and the second ground electrode;
The first electrode forms disk by the first high-field electrode and the first ground electrode;The second electrode is by the second high pressure Electrode and the second ground electrode composition disk;The diameter of first electrode and second electrode disk is equal;
Preferably, first high-field electrode and the second high-field electrode are semicircle copper plate;The semicircle red copper The bonding jumper being equally spaced is provided with the middle part of plate;First ground electrode and the second ground electrode are also semicircle red copper Plate;The bonding jumper being equally spaced is provided with the middle part of the semicircle copper plate;
A diameter of 120mm of the semicircle copper plate, thickness are 5~10mm;The length of the bonding jumper is 70mm, wide Spend for 0.1mm, the spacing of two neighboring bonding jumper is 2mm;
Preferably, the edge of first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode is entered Row chamfered;
Preferably, the space that the first electrode and second electrode arrangement symmetrical above and below are formed is the sample for placing thin-film material Product room;
Preferably, first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are molded in epoxy Resin is immersed in insulating oil;
Preferably, the edge and sample room of the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode Distance be less than 100 μm.
Compared with immediate prior art, excellent effect of the invention is:
A kind of device that nano-particle orientation in thin-film material is driven using electric field force provided by the invention, utilizes flat board electricity The boundary electric field of pole, both positive and negative polarity are staggered, and direction of an electric field is parallel to the electric field of electrode surface, and upper bottom crown symmetric arrays, Make that the depth of parallelism of electric field is higher, and thin-film material is placed in sample room, will by the electric field force of parallel thin-film material length direction, Fill up conventional art blank.And the apparatus structure is simple, cheap, it can be used for laboratory science research, can also use In film with high orientation degree industrial production.
Brief description of the drawings
The present invention is further described below in conjunction with the accompanying drawings.
Fig. 1:A kind of knot that the device that nano-particle is orientated in thin-film material is driven using electric field force in the embodiment of the present invention Structure schematic diagram;
Fig. 2:Ground electrode structural representation in the embodiment of the present invention;
Fig. 3:Mesohigh electrode structure schematic diagram of the embodiment of the present invention;
Fig. 4:The profile of ground electrode and high-field electrode in the embodiment of the present invention;
Fig. 5:The Electric Field Distribution simulation result schematic diagram of electrode surface in the embodiment of the present invention;
Wherein, 1:High-pressure stage leading-out terminal;2:First high-field electrode;3:First ground electrode;4:Ground point pole leading-out terminal;5: Second high-field electrode;6:Second ground electrode.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
It is provided by the invention it is a kind of using electric field force drive thin-film material in nano-particle be orientated device implementation for example Shown in Fig. 1, it is specially:
The nano-particle aligning device includes the first high-field electrode 2, the second high-field electrode 5, the first ground electricity in the present embodiment The ground electrode 6 of pole 3 and second.Wherein,
3 composition first electrode arranged in parallel of first high-field electrode 2 and the first ground electrode;
6 composition second electrode arranged in parallel of second high-field electrode 5 and the second ground electrode;
First high-voltage motor is connected with the first ground electrode using mortise and tenon formula, and the second high-voltage motor also uses with the second ground electrode Mortise and tenon formula connects.
First electrode and second electrode arrangement symmetrical above and below, and first electrode is formed with second electrode arrangement symmetrical above and below Space to place the sample room of thin-film material, electrode arrangement symmetrical above and below can increase the depth of parallelism of the electric field line in sample room. Wherein, the Electric Field Distribution simulation result of electrode surface is as shown in Figure 5.
1st, the first high-field electrode and the second high-field electrode
As shown in figure 3, the first high-field electrode and the second high-field electrode are semicircle copper plate, the semicircle copper plate Middle part is provided with the bonding jumper being equally spaced;High-pressure stage leading-out terminal is equipped with first high-field electrode and the second high-field electrode 1。
A diameter of 120mm of semicircle copper plate in the present embodiment, thickness are 5~10mm;The length of bonding jumper is 70mm, Width is 0.1mm, and the spacing of two neighboring bonding jumper is 2mm.And the edge of the first high-field electrode and the second high-field electrode is entered Row chamfered, so as to reduce the concentration of the electric field under high voltage and shelf depreciation.
2nd, the first ground electrode and the second ground electrode
As shown in Fig. 2 the first ground electrode and the second ground electrode are semicircle copper plate, the middle part of the semicircle copper plate It is provided with the bonding jumper being equally spaced;Ground electrode leading-out terminal 4 is equipped with first ground electrode and the second ground electrode.
A diameter of 120mm of semicircle copper plate in the present embodiment, thickness are 5~10mm;The length of bonding jumper is 70mm, Width is 0.1mm, and the spacing of two neighboring bonding jumper is 2mm.And the edge of the first ground electrode and the second ground electrode is fallen Angle is handled, so as to reduce the concentration of the electric field under high voltage and shelf depreciation.
First high-field electrode 2, the second high-field electrode 5, the profile of the first ground electrode 3 and the second ground electrode 6 are such as Fig. 4 institutes Show.
First electrode and second electrode are the equal disk of diameter in the present invention, the first high-field electrode, the second high-field electrode, First ground electrode and the second ground electrode are molded in epoxy resin or soluble poly tetrafluoroethene, now, the first high-field electrode, The distance of second high-field electrode, the edge of the first ground electrode and the second ground electrode and sample room is less than 100 μm.
Or immerse the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode in insulating oil, Insulating oil can use transformer oil, cable oil or silicone oil in the present embodiment.
The matrix material for using the thin-film material of nano-particle aligning device provided by the invention can be polyethylene, poly- third Alkene, polyvinyl chloride, epoxy resin etc., nano-particle can be carbon fiber, CNT, montmorillonite etc..
Finally it should be noted that:Described embodiment is only some embodiments of the present application, rather than whole realities Apply example.Based on the embodiment in the application, spectrum logical technical staff in this area is obtained under the premise of creative work is not made Every other embodiment, belong to the application protection scope.

Claims (7)

1. a kind of drive the device that nano-particle is orientated in thin-film material using electric field force, it is characterised in that described device includes First high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
First high-field electrode and the first ground electrode the composition first electrode arranged in parallel;Second high-field electrode and the second ground Electrode also composition second electrode arranged in parallel;The first electrode and second electrode arrangement symmetrical above and below;
First high-field electrode is connected with the first ground electrode using mortise and tenon formula, second high-field electrode and the second ground electrode Connected using mortise and tenon formula.
2. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature It is, first high-field electrode and the second high-field electrode are semicircle copper plate;Set in the middle part of the semicircle copper plate It is equipped with the bonding jumper being equally spaced;High-pressure stage leading-out terminal is equipped with first high-field electrode and the second high-field electrode;
First ground electrode and the second ground electrode are also semicircle copper plate;It is provided with the middle part of the semicircle copper plate The bonding jumper being equally spaced;Ground electrode leading-out terminal is equipped with first ground electrode and the second ground electrode;
The first electrode forms disk by the first high-field electrode and the first ground electrode;The second electrode is by the second high-field electrode Disk is formed with the second ground electrode;The diameter of first electrode and second electrode disk is equal.
3. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature It is, first high-field electrode and the second high-field electrode are semicircle copper plate;Set in the middle part of the semicircle copper plate It is equipped with the bonding jumper being equally spaced;First ground electrode and the second ground electrode are also semicircle copper plate;The semicircle The bonding jumper being equally spaced is provided with the middle part of shape copper plate;
A diameter of 120mm of the semicircle copper plate, thickness are 5~10mm;The length of the bonding jumper is 70mm, and width is 0.1mm, the spacing of two neighboring bonding jumper is 2mm.
4. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature It is, the edge of first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode is carried out at chamfering Reason.
5. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature It is, the space that first electrode and the second electrode arrangement symmetrical above and below is formed is the sample room for placing thin-film material.
6. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature It is, first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are molded in epoxy resin or dipping In insulating oil.
7. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as described in claim 5 or 6, it is special Sign is that the first high-field electrode, the second high-field electrode, the first ground electrode and the edge of the second ground electrode and the distance of sample room are small In 100 μm.
CN201510797401.9A 2015-11-18 2015-11-18 It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force Active CN105469914B (en)

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CN107511910A (en) * 2017-07-24 2017-12-26 佛山科学技术学院 A kind of soft ceramic manufacture method of graphene
CN112652819B (en) * 2020-09-07 2022-09-13 上海大学 Mold and method for preparing polymer composite solid electrolyte by electric field induced orientation

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CN102831992B (en) * 2012-08-13 2014-07-16 重庆大学 Device and method for inducing orientation arrangement of montmorillonoid in polyethylene by using electric field
CN103956311B (en) * 2014-05-16 2017-02-22 厦门大学 Charged particle beam trajectory control device

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