CN105469914B - It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force - Google Patents
It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force Download PDFInfo
- Publication number
- CN105469914B CN105469914B CN201510797401.9A CN201510797401A CN105469914B CN 105469914 B CN105469914 B CN 105469914B CN 201510797401 A CN201510797401 A CN 201510797401A CN 105469914 B CN105469914 B CN 105469914B
- Authority
- CN
- China
- Prior art keywords
- electrode
- field
- ground electrode
- electric field
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005684 electric field Effects 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 21
- 239000000203 mixture Substances 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 3
- 238000003491 array Methods 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052901 montmorillonite Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- LLYXJBROWQDVMI-UHFFFAOYSA-N 2-chloro-4-nitrotoluene Chemical compound CC1=CC=C([N+]([O-])=O)C=C1Cl LLYXJBROWQDVMI-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0028—Forming specific nanostructures comprising elements which are movable in relation to each other, e.g. slidable or rotatable
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/008—Processes for improving the physical properties of a device
Abstract
The device that nano-particle is orientated in thin-film material, including the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are driven using electric field force the invention provides a kind of;First high-field electrode and the first ground electrode composition first electrode arranged in parallel;Second high-field electrode and the second ground electrode also composition second electrode arranged in parallel;First electrode and second electrode arrangement symmetrical above and below.The present invention provides a kind of device that nano-particle orientation in thin-film material is driven using electric field force, utilize the boundary electric field of plate electrode, positive/negative plate is staggered, electric field of the direction of an electric field parallel to electrode surface, and upper bottom crown symmetric arrays, make the depth of parallelism of electric field higher, thin-film material is placed in sample room, will be by the electric field parallel to electrode surface, i.e. parallel to thin-film material length direction, the apparatus structure is simple, cheap, is studied available for laboratory science, also available for film with high orientation degree industrial production.
Description
Technical field
The present invention relates to the nano modification technical field of thin-film material, and in particular to one kind utilizes electric field force driving film material
The device that nano-particle is orientated in material.
Background technology
The dispersity of nano-particle directly determines the performance of nano composite material, and numerous experts and scholars, which study, finds nanometer
Particle directional profile can cause composite to possess extremely excellent optical property, mechanical performance and electrical property in particular directions
Can, these performances be common nano composite material it is incomparable.To reach this purpose, traditionally use and be machined into
The method of type, i.e. material are cooled and shaped in the presence of shear stress or tensile stress, and this method has obtained widely should
With.For recent two decades with the development of technology, electric field force is increasingly becoming another new particle after flow orientation and stretching orientation
The method of orientation, numerous foreign study persons impose DC electric field or AC field into the polymer of molten state, realize nanometer
Particle, such as CNT, ceramic particle, graphite microchip, montmorillonite etc., the orientation in polymeric matrix, and measure analysis
New material it is each to performance.
Such as the patent of No. 13 announcements of in August, 2012 " is used for the dress of electric field induction montmorillonite orientations in polyethylene
Put and method " (Patent No. 102831992), describe electric field induced orientation device.Wherein Top electrode connects high pressure, and bottom electrode connects
Ground, two electrodes are positioned opposite, thin-film material as upper/lower electrode among, therefore the electric field force direction in material suffered by nano-particle
For parallel thickness direction.But to solve the problem in experiment and engineering, many situations are it is desirable that parallel to thin-film material
The electric field of length direction, and prior art device is all mainly field parallel in thickness direction.
The content of the invention
In order to meet the needs of prior art, the invention provides one kind to utilize nanoparticle in electric field force driving thin-film material
The device of son orientation.
The technical scheme is that:
Described device includes the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
First high-field electrode and the first ground electrode the composition first electrode arranged in parallel;Second high-field electrode and
Two ground electrodes also composition second electrode arranged in parallel;The first electrode and second electrode arrangement symmetrical above and below;
First high-voltage motor is connected with the first ground electrode using mortise and tenon formula, the second high-voltage motor and the second ground electricity
Pole is also connected using mortise and tenon formula.
Preferably, first high-field electrode and the second high-field electrode are semicircle copper plate;The semicircle red copper
The bonding jumper being equally spaced is provided with the middle part of plate;High-pressure stage is equipped with first high-field electrode and the second high-field electrode
Leading-out terminal;
First ground electrode and the second ground electrode are also semicircle copper plate;Set in the middle part of the semicircle copper plate
It is equipped with the bonding jumper being equally spaced;Ground electrode leading-out terminal is equipped with first ground electrode and the second ground electrode;
The first electrode forms disk by the first high-field electrode and the first ground electrode;The second electrode is by the second high pressure
Electrode and the second ground electrode composition disk;The diameter of first electrode and second electrode disk is equal;
Preferably, first high-field electrode and the second high-field electrode are semicircle copper plate;The semicircle red copper
The bonding jumper being equally spaced is provided with the middle part of plate;First ground electrode and the second ground electrode are also semicircle red copper
Plate;The bonding jumper being equally spaced is provided with the middle part of the semicircle copper plate;
A diameter of 120mm of the semicircle copper plate, thickness are 5~10mm;The length of the bonding jumper is 70mm, wide
Spend for 0.1mm, the spacing of two neighboring bonding jumper is 2mm;
Preferably, the edge of first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode is entered
Row chamfered;
Preferably, the space that the first electrode and second electrode arrangement symmetrical above and below are formed is the sample for placing thin-film material
Product room;
Preferably, first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are molded in epoxy
Resin is immersed in insulating oil;
Preferably, the edge and sample room of the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode
Distance be less than 100 μm.
Compared with immediate prior art, excellent effect of the invention is:
A kind of device that nano-particle orientation in thin-film material is driven using electric field force provided by the invention, utilizes flat board electricity
The boundary electric field of pole, both positive and negative polarity are staggered, and direction of an electric field is parallel to the electric field of electrode surface, and upper bottom crown symmetric arrays,
Make that the depth of parallelism of electric field is higher, and thin-film material is placed in sample room, will by the electric field force of parallel thin-film material length direction,
Fill up conventional art blank.And the apparatus structure is simple, cheap, it can be used for laboratory science research, can also use
In film with high orientation degree industrial production.
Brief description of the drawings
The present invention is further described below in conjunction with the accompanying drawings.
Fig. 1:A kind of knot that the device that nano-particle is orientated in thin-film material is driven using electric field force in the embodiment of the present invention
Structure schematic diagram;
Fig. 2:Ground electrode structural representation in the embodiment of the present invention;
Fig. 3:Mesohigh electrode structure schematic diagram of the embodiment of the present invention;
Fig. 4:The profile of ground electrode and high-field electrode in the embodiment of the present invention;
Fig. 5:The Electric Field Distribution simulation result schematic diagram of electrode surface in the embodiment of the present invention;
Wherein, 1:High-pressure stage leading-out terminal;2:First high-field electrode;3:First ground electrode;4:Ground point pole leading-out terminal;5:
Second high-field electrode;6:Second ground electrode.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
It is provided by the invention it is a kind of using electric field force drive thin-film material in nano-particle be orientated device implementation for example
Shown in Fig. 1, it is specially:
The nano-particle aligning device includes the first high-field electrode 2, the second high-field electrode 5, the first ground electricity in the present embodiment
The ground electrode 6 of pole 3 and second.Wherein,
3 composition first electrode arranged in parallel of first high-field electrode 2 and the first ground electrode;
6 composition second electrode arranged in parallel of second high-field electrode 5 and the second ground electrode;
First high-voltage motor is connected with the first ground electrode using mortise and tenon formula, and the second high-voltage motor also uses with the second ground electrode
Mortise and tenon formula connects.
First electrode and second electrode arrangement symmetrical above and below, and first electrode is formed with second electrode arrangement symmetrical above and below
Space to place the sample room of thin-film material, electrode arrangement symmetrical above and below can increase the depth of parallelism of the electric field line in sample room.
Wherein, the Electric Field Distribution simulation result of electrode surface is as shown in Figure 5.
1st, the first high-field electrode and the second high-field electrode
As shown in figure 3, the first high-field electrode and the second high-field electrode are semicircle copper plate, the semicircle copper plate
Middle part is provided with the bonding jumper being equally spaced;High-pressure stage leading-out terminal is equipped with first high-field electrode and the second high-field electrode
1。
A diameter of 120mm of semicircle copper plate in the present embodiment, thickness are 5~10mm;The length of bonding jumper is 70mm,
Width is 0.1mm, and the spacing of two neighboring bonding jumper is 2mm.And the edge of the first high-field electrode and the second high-field electrode is entered
Row chamfered, so as to reduce the concentration of the electric field under high voltage and shelf depreciation.
2nd, the first ground electrode and the second ground electrode
As shown in Fig. 2 the first ground electrode and the second ground electrode are semicircle copper plate, the middle part of the semicircle copper plate
It is provided with the bonding jumper being equally spaced;Ground electrode leading-out terminal 4 is equipped with first ground electrode and the second ground electrode.
A diameter of 120mm of semicircle copper plate in the present embodiment, thickness are 5~10mm;The length of bonding jumper is 70mm,
Width is 0.1mm, and the spacing of two neighboring bonding jumper is 2mm.And the edge of the first ground electrode and the second ground electrode is fallen
Angle is handled, so as to reduce the concentration of the electric field under high voltage and shelf depreciation.
First high-field electrode 2, the second high-field electrode 5, the profile of the first ground electrode 3 and the second ground electrode 6 are such as Fig. 4 institutes
Show.
First electrode and second electrode are the equal disk of diameter in the present invention, the first high-field electrode, the second high-field electrode,
First ground electrode and the second ground electrode are molded in epoxy resin or soluble poly tetrafluoroethene, now, the first high-field electrode,
The distance of second high-field electrode, the edge of the first ground electrode and the second ground electrode and sample room is less than 100 μm.
Or immerse the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode in insulating oil,
Insulating oil can use transformer oil, cable oil or silicone oil in the present embodiment.
The matrix material for using the thin-film material of nano-particle aligning device provided by the invention can be polyethylene, poly- third
Alkene, polyvinyl chloride, epoxy resin etc., nano-particle can be carbon fiber, CNT, montmorillonite etc..
Finally it should be noted that:Described embodiment is only some embodiments of the present application, rather than whole realities
Apply example.Based on the embodiment in the application, spectrum logical technical staff in this area is obtained under the premise of creative work is not made
Every other embodiment, belong to the application protection scope.
Claims (7)
1. a kind of drive the device that nano-particle is orientated in thin-film material using electric field force, it is characterised in that described device includes
First high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
First high-field electrode and the first ground electrode the composition first electrode arranged in parallel;Second high-field electrode and the second ground
Electrode also composition second electrode arranged in parallel;The first electrode and second electrode arrangement symmetrical above and below;
First high-field electrode is connected with the first ground electrode using mortise and tenon formula, second high-field electrode and the second ground electrode
Connected using mortise and tenon formula.
2. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature
It is, first high-field electrode and the second high-field electrode are semicircle copper plate;Set in the middle part of the semicircle copper plate
It is equipped with the bonding jumper being equally spaced;High-pressure stage leading-out terminal is equipped with first high-field electrode and the second high-field electrode;
First ground electrode and the second ground electrode are also semicircle copper plate;It is provided with the middle part of the semicircle copper plate
The bonding jumper being equally spaced;Ground electrode leading-out terminal is equipped with first ground electrode and the second ground electrode;
The first electrode forms disk by the first high-field electrode and the first ground electrode;The second electrode is by the second high-field electrode
Disk is formed with the second ground electrode;The diameter of first electrode and second electrode disk is equal.
3. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature
It is, first high-field electrode and the second high-field electrode are semicircle copper plate;Set in the middle part of the semicircle copper plate
It is equipped with the bonding jumper being equally spaced;First ground electrode and the second ground electrode are also semicircle copper plate;The semicircle
The bonding jumper being equally spaced is provided with the middle part of shape copper plate;
A diameter of 120mm of the semicircle copper plate, thickness are 5~10mm;The length of the bonding jumper is 70mm, and width is
0.1mm, the spacing of two neighboring bonding jumper is 2mm.
4. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature
It is, the edge of first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode is carried out at chamfering
Reason.
5. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature
It is, the space that first electrode and the second electrode arrangement symmetrical above and below is formed is the sample room for placing thin-film material.
6. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as claimed in claim 1, its feature
It is, first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are molded in epoxy resin or dipping
In insulating oil.
7. a kind of device that nano-particle orientation in thin-film material is driven using electric field force as described in claim 5 or 6, it is special
Sign is that the first high-field electrode, the second high-field electrode, the first ground electrode and the edge of the second ground electrode and the distance of sample room are small
In 100 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510797401.9A CN105469914B (en) | 2015-11-18 | 2015-11-18 | It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510797401.9A CN105469914B (en) | 2015-11-18 | 2015-11-18 | It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105469914A CN105469914A (en) | 2016-04-06 |
CN105469914B true CN105469914B (en) | 2018-03-16 |
Family
ID=55607524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510797401.9A Active CN105469914B (en) | 2015-11-18 | 2015-11-18 | It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105469914B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107511910A (en) * | 2017-07-24 | 2017-12-26 | 佛山科学技术学院 | A kind of soft ceramic manufacture method of graphene |
CN112652819B (en) * | 2020-09-07 | 2022-09-13 | 上海大学 | Mold and method for preparing polymer composite solid electrolyte by electric field induced orientation |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004502554A (en) * | 2000-03-22 | 2004-01-29 | ユニバーシティー オブ マサチューセッツ | Nano cylinder array |
JP4451299B2 (en) * | 2003-12-22 | 2010-04-14 | シャープ株式会社 | Display element and display device |
CN102831992B (en) * | 2012-08-13 | 2014-07-16 | 重庆大学 | Device and method for inducing orientation arrangement of montmorillonoid in polyethylene by using electric field |
CN103956311B (en) * | 2014-05-16 | 2017-02-22 | 厦门大学 | Charged particle beam trajectory control device |
-
2015
- 2015-11-18 CN CN201510797401.9A patent/CN105469914B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN105469914A (en) | 2016-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10356896B2 (en) | Self-repairing wiring | |
Amoli et al. | Ionic tactile sensors for emerging human‐interactive technologies: a review of recent progress | |
Han et al. | r-Shaped hybrid nanogenerator with enhanced piezoelectricity | |
Zhu et al. | Functional electrical stimulation by nanogenerator with 58 V output voltage | |
Wilson et al. | Structure modification of 0–3 piezoelectric ceramic/polymer composites through dielectrophoresis | |
CN105469914B (en) | It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force | |
CN109855526A (en) | A kind of resistance-type flexibility strain transducer and preparation method thereof based on dry mediation self assembly | |
CN109827681B (en) | Flexible strain sensor with amplification structure and preparation method thereof | |
US11552240B2 (en) | Machines and processes for producing polymer films and films produced thereby | |
CN103490005A (en) | Method for manufacturing high-electrical-property nano generator based on piezoelectric-frictional effect | |
CN104248997B (en) | A kind of digital microfluidic chip and control method thereof | |
CN208488191U (en) | A kind of honeycomb structure pressure sensor | |
JP5119176B2 (en) | Dielectric material manufacturing method and dielectric film manufactured thereby | |
US11203675B2 (en) | Machines and processes for producing polymer films and films produced thereby | |
CN108981980A (en) | A kind of nanoscale rotary table microstructure pressure sensor and preparation method thereof | |
CN105185898A (en) | Flexible transparent functional device and preparation method thereof | |
CN109456874A (en) | A kind of unicellular manipulation micro-fluidic chip of the two-way dielectrophoresis of cell | |
CN107496053A (en) | Electronic skin, preparation method and driving method | |
CN103346695A (en) | R-type combined type micro-nano generator | |
Lu et al. | An ultra-wide sensing range film strain sensor based on a branch-shaped PAN-based carbon nanofiber and carbon black synergistic conductive network for human motion detection and human–machine interfaces | |
Xiao et al. | Flexible triboelectric nanogenerator from micro-nano structured polydimethylsiloxane | |
Yan et al. | Charge-boosting strategy for wearable Nanogenerators enabled by integrated piezoelectric/conductive nanofibers | |
CN108801512A (en) | A kind of nano-hemisphere pressure sensor and preparation method thereof | |
TWI399488B (en) | A microfluidic driving system | |
CN113708658A (en) | Method for simultaneously improving piezoelectric and triboelectric transduction efficiencies of composite generator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |