CN105468218A - Capacitive touch screen of GF1 (Glass Film) structure, and manufacture method of capacitive touch screen - Google Patents
Capacitive touch screen of GF1 (Glass Film) structure, and manufacture method of capacitive touch screen Download PDFInfo
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- CN105468218A CN105468218A CN201510847273.4A CN201510847273A CN105468218A CN 105468218 A CN105468218 A CN 105468218A CN 201510847273 A CN201510847273 A CN 201510847273A CN 105468218 A CN105468218 A CN 105468218A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title abstract description 23
- 239000011521 glass Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 31
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 238000007711 solidification Methods 0.000 claims description 13
- 230000008023 solidification Effects 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 13
- 238000007639 printing Methods 0.000 claims description 11
- 239000004568 cement Substances 0.000 claims description 8
- 239000005357 flat glass Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 230000035699 permeability Effects 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052709 silver Inorganic materials 0.000 abstract description 17
- 239000004332 silver Substances 0.000 abstract description 17
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000001360 synchronised effect Effects 0.000 description 7
- 230000006698 induction Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000009955 starching Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses a capacitive touch screen of a GF1 (Glass Film) structure, and a manufacture method of the capacitive touch screen. The capacitive touch screen of the GF1 structure comprises an ITO (Indium Tin Oxide) film layer and a flexible circuit board, wherein the ITO film layer is provided with an X-direction ITO circuit and a Y-direction ITO circuit, wherein the X-direction ITO circuit and the Y-direction ITO circuit are in integral forming; the X-direction ITO circuit comprises an X-direction ITO electrode wire and a X-direction ITO outgoing wire, wherein the X-direction ITO electrode wire and the X-direction ITO outgoing wire are in integral forming; the Y-direction ITO circuit comprises a Y-direction ITO electrode wire and a Y-direction ITO outgoing wire, wherein the Y-direction ITO electrode wire and the Y-direction ITO outgoing wire are in integral forming; and the X-direction ITO outgoing wire and the Y-direction ITO outgoing wire are connected with the flexible circuit board. The capacitive touch screen does not need to manufacture a silver paste wire to connect the ITO electrode wire and the flexible circuit board, so that the registering problem of the ITO wire and the sliver paste wire is avoided. The capacitive touch screen has the advantages of simple structure, high manufacture precision and high finished product yield and can save manufacture cost.
Description
Technical field
The present invention relates to touch screen technology field, particularly relate to capacitance touch screen of a kind of GF1 structure and preparation method thereof.
Background technology
In existing capacitance touch screen manufacture craft, after ito thin film (i.e. ITOFilm) upper making ITO circuit, elargol line need be processed into by silver slurry and be connected with FPC to realize ITO circuit, just can connect by realizing circuit.Elargol line connection ITO circuit and FPC is adopted to have the following disadvantages: (1) cost is high, and domestic elargol cost is substantially at 5000RMB/KG, and the unit/KG up to ten thousand easily of import.(2) elargol line processing technology is complicated, yield is low and life efficiency is low.No matter the processing of existing elargol line adopts directly is printed, or again with laser or exposure imaging after printing, its processing technology substantially all needs in 2 ~ 5 each operations, and yields only has about 95% substantially.(3) elargol line is opaque, is difficult to realize the even Rimless design of narrow frame.
Summary of the invention
The technical problem to be solved in the present invention is, for adopting elargol line to connect Problems existing in ITO circuit and FPC process in existing capacitance touch screen manufacturing process, provides capacitance touch screen of a kind of GF1 structure and preparation method thereof.
The technical solution adopted for the present invention to solve the technical problems is: a kind of capacitance touch screen of GF1 structure, comprises ito thin film layer and flexible circuit board; Described ito thin film layer is provided with integrated X-direction ITO circuit and Y-direction ITO circuit; Described X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line; Described Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line; Described X-direction ITO extension line is connected with described flexible circuit board with described Y-direction ITO extension line.
Preferably, the capacitance touch screen of described GF1 structure also comprises cover-plate glass and OCA optical cement layer; Described ito thin film layer is fitted on described cover-plate glass by described OCA optical cement layer.
Preferably, a minor face place of the capacitance touch screen of described GF1 structure is provided with the link of described flexible circuit board, and described X-direction ITO extension line is connected with described link respectively with described Y-direction ITO extension line.
Preferably, the live width of described X-direction ITO electrode line and described Y-direction ITO electrode line is 35-100um; The live width of described X-direction ITO extension line is 80-300um; The live width of described Y-direction ITO extension line is 80-300um.
Preferably, the line-spacing of X-direction ITO electrode line and Y-direction ITO electrode line is 30-100um; The line-spacing of X-direction ITO extension line is 80-300um; The line-spacing of Y-direction ITO extension line is 80-300um.
The present invention also provides a kind of method for making of capacitance touch screen of GF1 structure, comprises the steps:
S1: the X-direction ITO circuit being made into one shaping on ito thin film layer and Y-direction ITO circuit; Described X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line, and described Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line;
S2: described X-direction ITO extension line and described Y-direction ITO extension line are tied in flexible circuit board.
Preferably, described step S1 comprises:
S111: be covered with dry film on ito thin film layer;
S112: printing opacity light shield is placed on described ito thin film layer, and use printing opacity light shield described in parallel UV light permeability to be radiated on described dry film to form solidification dry film; Described printing opacity light shield comprises the unthreaded hole corresponding with X-direction ITO electrode line, X-direction ITO extension line, Y-direction ITO electrode line and Y-direction ITO extension line;
S113: the Na being 9-11g/l by described ito thin film layer by concentration with the speed of 3.6-5.0m/min
2cO
3solution, to wash away uncured described dry film;
S114: the wang aqueous solution being 5.5-8.5mol/L by described ito thin film layer by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on the described ito thin film layer of the described dry film covering be not cured;
S115: the NaOH solution being 0.6-1.8mol/l by described ito thin film layer by concentration with the speed of 4.0-5.4m/min, to wash away described solidification dry film, to be formed with integrated X-direction ITO circuit and Y-direction ITO circuit on described ito thin film layer.
Preferably, being 35-100um for the width of the part of irradiating described X-direction ITO electrode line and described Y-direction ITO electrode line in described unthreaded hole, is 80-300um for irradiating the width of the part of described X-direction ITO extension line; Be 80-300um for irradiating the width of the part of described Y-direction ITO extension line.
Preferably, being 35-100um for the spacing of the part of irradiating described X-direction ITO electrode line and described Y-direction ITO electrode line in described unthreaded hole, is 80-300um for irradiating the spacing of the part of described X-direction ITO extension line; Be 80-300um for irradiating the spacing of the part of described Y-direction ITO extension line.
The present invention compared with prior art tool has the following advantages: the capacitance touch screen of GF1 structure provided by the present invention, by being provided with integrated X-direction ITO circuit and Y-direction ITO circuit wherein on ito thin film layer, X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line, Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line, X-direction ITO extension line is connected with flexible circuit board with Y-direction ITO extension line, without the need to making silver slurry line to be connected with flexible circuit board by ITO electrode line, be conducive to the cost saving elargol line, and there is not the free problem of silver slurry.The capacitive touch screen structure of this GF1 structure is simple and making precision is higher, X-direction ITO electrode line and the synchronous processing of X-direction ITO extension line complete, Y-direction ITO electrode line and Y-direction ITO extension line synchronously complete, and simple and its finished product yield of production process is more than 99%.Owing to starching line without the need to making silver, X-direction ITO electrode line, X-direction ITO extension line synchronous Y-direction ITO electrode line and Y-direction ITO extension line are ITO material and are made, and ITO material is transparent, are conducive to realizing the even Rimless design of narrow frame.
The method for making of the capacitance touch screen of GF1 structure provided by the present invention, the capacitance touch screen of the GF1 structure produced, ito thin film layer is provided with integrated X-direction ITO circuit and Y-direction ITO circuit, wherein, X-direction ITO circuit comprises integrated X-direction ITO electrode line and X-direction ITO extension line, Y-direction ITO circuit comprises integrated Y-direction ITO electrode line and Y-direction ITO extension line, and X-direction ITO extension line is connected with flexible circuit board with Y-direction ITO extension line, simplify manufacture craft, raising efficiency also effectively can reduce cost of manufacture.This method for making, without the need to making silver slurry line separately to be connected with flexible circuit board by ITO electrode line, is conducive to the cost saving elargol line, and there is not the free problem of silver slurry.The method for making of the capacitive touch screen structure of this GF1 structure, makes X-direction ITO electrode line and the synchronous processing of X-direction ITO extension line complete, and Y-direction ITO electrode line and Y-direction ITO extension line synchronously complete, and simple and its finished product yield of production process is more than 99%.Owing to starching line without the need to making silver, X-direction ITO electrode line, X-direction ITO extension line synchronous Y-direction ITO electrode line and Y-direction ITO extension line are ITO material and are made, and ITO material is transparent, are conducive to realizing the even Rimless design of narrow frame.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of the capacitance touch screen of GF1 structure in one embodiment of the invention.
Fig. 2 is the X-direction ITO circuit of the capacitance touch screen of GF1 structure in one embodiment of the invention and the schematic diagram of Y-direction ITO circuit.
Fig. 3 is the enlarged drawing of part A in Fig. 2.
Fig. 4 is the enlarged drawing of part B in Fig. 2.
Fig. 5 is the process flow diagram of the method for making of the capacitance touch screen of GF1 structure in one embodiment of the invention.
In figure: 11, X-direction ITO circuit; 111, X-direction ITO electrode line; 112, X-direction ITO extension line; 12, Y-direction ITO circuit; 121, Y-direction ITO electrode line; 122, Y-direction ITO extension line; 13, flexible circuit board; 14, cover-plate glass; 15, ito thin film layer; 16, OCA optical cement layer.
Embodiment
In order to there be understanding clearly to technical characteristic of the present invention, object and effect, now contrast accompanying drawing and describe the specific embodiment of the present invention in detail.
Fig. 1 illustrates the capacitance touch screen of the GF1 structure in the present embodiment.The capacitance touch screen of this GF1 structure comprises ito thin film layer 15, flexible circuit board 13, cover-plate glass 14 and OCA optical cement layer 16.As shown in figs 2-4, ito thin film layer 15 is provided with integrated X-direction ITO circuit 11 and Y-direction ITO circuit 12; X-direction ITO circuit 11 comprises integrated X-direction ITO electrode line 111 and X-direction ITO extension line 112, Y-direction ITO circuit 12 comprises integrated Y-direction ITO electrode line 121 and Y-direction ITO extension line 122.X-direction ITO extension line 112 is connected with flexible circuit board 13 with Y-direction ITO extension line 122.X-direction ITO circuit 11 and Y-direction ITO circuit 12 one-body molded and be arranged on ito thin film layer 15.Ito thin film layer 15 is fitted on cover-plate glass 14 by OCA optical cement layer 16.
In the capacitance touch screen of this GF1 structure, because X-direction ITO extension line 112 is directly connected with flexible circuit board 13 with Y-direction ITO extension line 122, without the need to making silver slurry line to be connected with flexible circuit board 13 by ITO electrode line (comprising X-direction ITO electrode line 111 and Y-direction ITO electrode line 121), be conducive to the cost saving elargol line, and there is not the free problem of silver slurry.The capacitive touch screen structure of this GF1 structure is simple and making precision is higher, X-direction ITO electrode line 111 and X-direction ITO extension line 112 synchronous processing complete, Y-direction ITO electrode line 121 and Y-direction ITO extension line 122 synchronously complete, and simple and its finished product yield of production process is more than 99%.Owing to starching line without the need to making silver, the synchronous Y-direction ITO electrode line 121 of X-direction ITO electrode line 111, X-direction ITO extension line 112 is ITO material with Y-direction ITO extension line 122 and is made, ITO material is transparent, be conducive to realizing narrow frame even Rimless be designed with to be beneficial to and realize narrow frame design.
One minor face place of the capacitance touch screen of GF1 structure is provided with the link of flexible circuit board 13, and X-direction ITO extension line 112 is connected with link respectively with Y-direction ITO extension line 122.X-direction ITO extension line 112 is connected with the minor face place of flexible circuit board 13 at the capacitance touch screen of GF1 structure with Y-direction ITO extension line 122, X-direction ITO extension line 112 and Y-direction ITO extension line 122 is adopted to substitute silver slurry line, because ITO is transparent, make its frame cabling the same with form, thus can realize ultra-narrow frame or Rimless design.Understandably, in the capacitance touch screen manufacturing process of GF1 structure, the ITO material that sheet resistance is lower is preferably adopted to make X-direction ITO electrode line 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122; The drive IC be connected with Y-direction ITO extension line 122 with X-direction ITO extension line 112 preferably adopts driving force better (as adopted the ITO of the sheet resistance of day east 100 Ω, drive IC is this ZT7548 of Renyi), to ensure induction precision and the sensitivity of the capacitance touch screen of GF1 structure.
The live width of X-direction ITO electrode line 111 and Y-direction ITO electrode line 121 is 35-100um, and line-spacing is 30-100um; The live width of X-direction ITO extension line 112 is 80-300um, and line-spacing is 80-300um; The live width of Y-direction ITO extension line 122 is 80-300um, and line-spacing is 80-300um.Because ITO line is longer, its impedance is larger, therefore when making X-direction ITO electrode line 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122, need ensure that its live width is not less than minimum value, because impedance is excessive during to avoid making, affect the sensitivity of the capacitance touch screen of GF1 structure; And need ensure that its live width is not more than maximal value, if live width is excessive, the demand of ITO impedance can be met, but easily cause that production cost is too high, waste of material and affect induction precision and the sensitivity of the capacitance touch screen of GF1 structure.If the line-spacing of any two X-direction ITO electrode lines 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122 is too small, can manufacture difficulty be increased, affect production efficiency; If line-spacing is excessive, can reduces by the density of the capacitive sensing the formed point of X-direction ITO electrode line 111 and Y-direction ITO electrode line 121, affect induction precision.
The process flow diagram of the method for making of the capacitance touch screen of the GF1 structure in the open the present embodiment of Fig. 5.The method for making of the capacitance touch screen of this GF1 structure comprises the steps:
S1: the X-direction ITO circuit 11 being made into one shaping on ito thin film layer 15 and Y-direction ITO circuit 12.Wherein, X-direction ITO circuit 11 comprises integrated X-direction ITO electrode line 111 and X-direction ITO extension line 112, Y-direction ITO circuit 12 comprises integrated Y-direction ITO electrode line 121 and Y-direction ITO extension line 122.
Step S1 specifically comprises the steps:
S111: be covered with dry film on ito thin film layer 15.Dry film is a kind of photoresist, can solidify to form solidification dry film under the irradiation of ultraviolet light, and solidification dry film is alkaline soluble, is insoluble to acid.
S112: printing opacity light shield is placed on ito thin film layer 15, and use parallel UV light permeability printing opacity light shield to be radiated on dry film to form solidification dry film.Printing opacity light shield comprises the unthreaded hole corresponding with X-direction ITO electrode line 111, X-direction ITO extension line 112, Y-direction ITO electrode line 121 and Y-direction ITO extension line 122.
Wherein, this unthreaded hole is 35-100um for irradiating the width of the part of X-direction ITO electrode line 111 and Y-direction ITO electrode line 121, and spacing is 30-100um; Be 80-300um for irradiating the width of the part of X-direction ITO extension line 112, spacing is 80-300um; Be 80-300um for irradiating the width of the part of Y-direction ITO extension line 122, spacing is 80-300um.The X-direction ITO electrode line 111 covered under being radiated at by printing opacity light shield the solidification dry film that dry film formed to make parallel ultraviolet light and the live width of Y-direction ITO electrode line 121 are for 35-100um, and line-spacing is 30-100um; The live width of X-direction ITO extension line 112 is 80-300um, and line-spacing is 80-300um; The live width of Y-direction ITO extension line 122 is 80-300um, and line-spacing is 80-300um.
Because ITO line is longer, its impedance is larger, therefore when making X-direction ITO electrode line 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122, need ensure that its live width is not less than minimum value, because impedance is excessive during to avoid making, affect the sensitivity of the capacitance touch screen of GF1 structure; And ensure that its live width is not more than maximal value, if live width is excessive, the demand of ITO impedance can be met, but easily cause that production cost is too high, waste of material and affect induction precision and the sensitivity of the capacitance touch screen of GF1 structure.If the line-spacing of any two X-direction ITO electrode lines 111, Y-direction ITO electrode line 121, X-direction ITO extension line 112 and Y-direction ITO extension line 122 is too small, can manufacture difficulty be increased, affect production efficiency; If line-spacing is excessive, can reduces by the density of the capacitive sensing the formed point of X-direction ITO electrode line 111 and Y-direction ITO electrode line 121, affect induction precision.
S113: the Na being 9-11g/l by ito thin film layer 15 by concentration with the speed of 3.6-5.0m/min
2cO
3solution, to wash away uncured dry film.Understandably, Na
2cO
3solution can react with the dry film be not cured, and does not react with solidification dry film, ito thin film layer 15 is immersed the Na of concentration 9-11g/l with the speed of 3.6-5.0m/min
2cO
3solution, can eliminate the dry film be not cured, avoid affecting subsequent operation.
S114: the wang aqueous solution being 5.5-8.5mol/L by ito thin film layer 15 by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on the ito thin film layer 15 of the dry film covering be not cured.Because wang aqueous solution is hydrochloric acid and the nitric acid solution by 1:3 proportioning, can react with ITO, and solidify dry film and be insoluble to acid, therefore, ito thin film layer 15 is immersed with the speed of 3.8-5.2m/min the wang aqueous solution that concentration is 5.5-8.5mol/L, the ITO that the dry film that is not cured covers can be removed.
S115: the NaOH solution being 0.6-1.8mol/l by ito thin film layer 15 by concentration with the speed of 4.0-5.4m/min, to wash away solidification dry film, to be formed with integrated X-direction ITO circuit 11 and Y-direction ITO circuit 12 on ito thin film layer 15.Because solidification dry film is alkaline soluble, and ITO is insoluble to alkali, ito thin film layer 15 is immersed with the speed of 4.0-5.4m/min the NaOH solution that concentration is 0.6-1.8mol/l, can effectively remove solidification dry film, the integrated X-direction ITO circuit 11 covered under making solidification dry film and Y-direction ITO circuit 12 appear.Understandably, Na is adopted in the present embodiment
2cO
3solution, wang aqueous solution and NaOH solution low price, make its cost of manufacture lower, can be suitable for large-scale production.
S2: adopt ACF glue X-direction ITO extension line 112 and Y-direction ITO extension line 122 to be tied in flexible circuit board 13.Wherein, ACF glue (AnisotropicConductiveFilm, anisotropic conductive), utilizes conducting particles to connect IC chip and substrate electrode between the two makes it to become conducting, conducting short circuit between adjacent two electrodes can be avoided again simultaneously, and reach only in the object of Z-direction conducting.
S3: adopt OCA optical cement layer 16 to be fitted on cover-plate glass 14 by the ito thin film layer 15 being formed with integrated X-direction ITO circuit 11 and Y-direction ITO circuit 12, complete the making of the capacitance touch screen of GF1 structure.
Understandably, the capacitance touch screen of the GF1 structure adopting the method for making of the capacitance touch screen of this GF1 structure to produce, silver slurry line is substituted by ITO, expose together with peripheral frame line (X-direction ITO extension line 112 and Y-direction ITO extension line 122) when ITO exposes, development etches out, then X-direction ITO extension line 112 is directly connected with flexible circuit board 13 with Y-direction ITO extension line 122, its process, without the need to making silver slurry line separately to be connected with flexible circuit board 13 by ITO electrode line, is conducive to the cost saving elargol line.Starch line registering problem owing to there is not ITO electrode line with silver, silver slurry line also can be avoided to make or in use procedure, there is the appearance affecting the problem of finished product yield, ensure that the yield of the capacitance touch screen of GF1 structure is more than 99%.In the method for making of the capacitance touch screen of this GF1 structure, directly realize conducting function with ITO, thus saved the production process of elargol line, effectively can simplify the manufacture craft of the capacitance touch screen of GF1 structure, raising efficiency also effectively can reduce cost of manufacture.And, without the need to making silver slurry line in the method for making of the capacitance touch screen of this GF1 structure, the synchronous Y-direction ITO electrode line 121 of X-direction ITO electrode line 111, X-direction ITO extension line 112 is ITO material with Y-direction ITO extension line 122 and is made, ITO material is transparent, is conducive to realizing the even Rimless design of narrow frame.
The present invention is described by above-mentioned specific embodiment, it will be appreciated by those skilled in the art that, without departing from the present invention, can also carry out various conversion and be equal to substituting to the present invention.In addition, for particular condition or concrete condition, various amendment can be made to the present invention, and not depart from the scope of the present invention.Therefore, the present invention is not limited to disclosed specific embodiment, and should comprise the whole embodiments fallen within the scope of the claims in the present invention.
Claims (9)
1. a capacitance touch screen for GF1 structure, is characterized in that, comprises ito thin film layer (15) and flexible circuit board (13); Described ito thin film layer (15) is provided with integrated X-direction ITO circuit (11) and Y-direction ITO circuit (12), and described X-direction ITO circuit (11) comprises integrated X-direction ITO electrode line (111) and X-direction ITO extension line (112); Described Y-direction ITO circuit (12) comprises integrated Y-direction ITO electrode line (121) and Y-direction ITO extension line (122); Described X-direction ITO extension line (112) is connected with described flexible circuit board (13) with described Y-direction ITO extension line (122).
2. the capacitance touch screen of GF1 structure according to claim 1, is characterized in that, the capacitance touch screen of described GF1 structure also comprises cover-plate glass (14) and OCA optical cement layer (16); Described ito thin film layer (15) is fitted on described cover-plate glass (14) by described OCA optical cement layer (16).
3. the capacitance touch screen of GF1 structure according to claim 1, it is characterized in that, one minor face place of the capacitance touch screen of described GF1 structure is provided with the link of described flexible circuit board (13), and described X-direction ITO extension line (112) is connected with described link respectively with described Y-direction ITO extension line (122).
4. the capacitance touch screen of the GF1 structure according to any one of claim 1-3, is characterized in that, the live width of described X-direction ITO electrode line (111) and described Y-direction ITO electrode line (121) is 35-100um; The live width of described X-direction ITO extension line (112) is 80-300um; The live width of described Y-direction ITO extension line (122) is 80-300um.
5. the capacitance touch screen of GF1 structure according to claim 4, is characterized in that, the line-spacing of X-direction ITO electrode line (111) and Y-direction ITO electrode line (121) is 30-100um; The line-spacing of X-direction ITO extension line (112) is 80-300um; The line-spacing of Y-direction ITO extension line (122) is 80-300um.
6. the method for making of the capacitance touch screen of the GF1 structure described in any one of claim 1-5, is characterized in that, comprise the steps:
S1: the X-direction ITO circuit (11) being made into one shaping on ito thin film layer (15) and Y-direction ITO circuit (12); Described X-direction ITO circuit (11) comprises integrated X-direction ITO electrode line (111) and X-direction ITO extension line (112), and described Y-direction ITO circuit (12) comprises integrated Y-direction ITO electrode line (121) and Y-direction ITO extension line (122);
S2: described X-direction ITO extension line (112) and described Y-direction ITO extension line (122) are tied in flexible circuit board (13).
7. the method for making of the capacitance touch screen of GF1 structure according to claim 6, is characterized in that, described step S1 comprises:
S111: be covered with dry film on ito thin film layer (15);
S112: printing opacity light shield is placed on described ito thin film layer (15), and use printing opacity light shield described in parallel UV light permeability to be radiated on described dry film to form solidification dry film; Described printing opacity light shield comprises the unthreaded hole corresponding with X-direction ITO electrode line (111), X-direction ITO extension line (112), Y-direction ITO electrode line (121) and Y-direction ITO extension line (122);
S113: be the Na of 9-11g/l by described ito thin film layer (15) by concentration with the speed of 3.6-5.0m/min
2cO
3solution, to wash away uncured described dry film;
S114: be the wang aqueous solution of 5.5-8.5mol/L by described ito thin film layer (15) by concentration with the speed of 3.8-5.2m/min, to wash away the ITO on described ito thin film layer (15) that the described dry film that is not cured covers;
S115: be the NaOH solution of 0.6-1.8mol/l by described ito thin film layer (15) by concentration with the speed of 4.0-5.4m/min, to wash away described solidification dry film, to be formed with integrated X-direction ITO circuit (11) and Y-direction ITO circuit (12) on described ito thin film layer (15).
8. the method for making of the capacitance touch screen of GF1 structure according to claim 7, it is characterized in that, be 35-100um for the width of the part of irradiating described X-direction ITO electrode line (111) and described Y-direction ITO electrode line (121) in described unthreaded hole, the width for the part of irradiating described X-direction ITO extension line (112) is 80-300um; Width for the part of irradiating described Y-direction ITO extension line (122) is 80-300um.
9. the method for making of the capacitance touch screen of GF1 structure according to claim 8, it is characterized in that, be 35-100um for the spacing of the part of irradiating described X-direction ITO electrode line (111) and described Y-direction ITO electrode line (121) in described unthreaded hole, the spacing for the part of irradiating described X-direction ITO extension line (112) is 80-300um; Spacing for the part of irradiating described Y-direction ITO extension line (122) is 80-300um.
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