CN105453283A - 用于光半导体装置用引线框的基体及其制造方法、使用该基体的光半导体装置用引线框及其制造方法、以及光半导体装置 - Google Patents
用于光半导体装置用引线框的基体及其制造方法、使用该基体的光半导体装置用引线框及其制造方法、以及光半导体装置 Download PDFInfo
- Publication number
- CN105453283A CN105453283A CN201380078695.9A CN201380078695A CN105453283A CN 105453283 A CN105453283 A CN 105453283A CN 201380078695 A CN201380078695 A CN 201380078695A CN 105453283 A CN105453283 A CN 105453283A
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- Prior art keywords
- optical semiconductor
- semiconductor device
- lead frame
- matrix
- device lead
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Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 114
- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000005096 rolling process Methods 0.000 claims abstract description 71
- 239000011159 matrix material Substances 0.000 claims description 100
- 238000002310 reflectometry Methods 0.000 claims description 48
- 230000003746 surface roughness Effects 0.000 claims description 27
- 239000003921 oil Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000010731 rolling oil Substances 0.000 claims description 6
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 claims description 3
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 claims description 3
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- KRRRBSZQCHDZMP-UHFFFAOYSA-N selanylidenesilver Chemical compound [Ag]=[Se] KRRRBSZQCHDZMP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 2
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 2
- 229910001370 Se alloy Inorganic materials 0.000 claims description 2
- 239000002140 antimony alloy Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 22
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 229910001316 Ag alloy Inorganic materials 0.000 description 9
- 229910000881 Cu alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 210000003205 muscle Anatomy 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- MXBPEVXRPBRJNW-UHFFFAOYSA-N antimony;selanylidenesilver Chemical compound [Sb].[Ag]=[Se] MXBPEVXRPBRJNW-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007519 figuring Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000021110 pickles Nutrition 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/073298 WO2015029211A1 (ja) | 2013-08-30 | 2013-08-30 | 光半導体装置用リードフレーム用の基体とその製造方法、これを用いた光半導体装置用リードフレームとその製造方法、および光半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105453283A true CN105453283A (zh) | 2016-03-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201380078695.9A Pending CN105453283A (zh) | 2013-08-30 | 2013-08-30 | 用于光半导体装置用引线框的基体及其制造方法、使用该基体的光半导体装置用引线框及其制造方法、以及光半导体装置 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101894160B1 (ko) |
CN (1) | CN105453283A (ko) |
WO (1) | WO2015029211A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110031091A (zh) * | 2017-12-20 | 2019-07-19 | 德州仪器公司 | 用于引线框亮度测量的方法及*** |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6476227B2 (ja) * | 2017-03-31 | 2019-02-27 | Jx金属株式会社 | 銅又は銅合金の板条並びにトラバースコイル及びその製造方法 |
JP7093317B2 (ja) * | 2019-02-06 | 2022-06-29 | Jx金属株式会社 | トラバースコイル及びその製造方法 |
JP7366480B1 (ja) * | 2022-04-04 | 2023-10-23 | 古河電気工業株式会社 | リードフレーム材およびその製造方法、ならびにリードフレーム材を用いた半導体パッケージ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61148883A (ja) | 1984-12-22 | 1986-07-07 | Toshiba Corp | 光半導体装置用リ−ドフレ−ム |
JPH0987899A (ja) | 1995-09-21 | 1997-03-31 | Furukawa Electric Co Ltd:The | 電子機器用銅合金材料の製造方法 |
JP2005029849A (ja) | 2003-07-07 | 2005-02-03 | Kobe Steel Ltd | リフレクター用Ag合金反射膜、及び、このAg合金反射膜を用いたリフレクター、並びに、このAg合金反射膜の形成用のAg合金スパッタリングターゲット |
JP4367457B2 (ja) | 2006-07-06 | 2009-11-18 | パナソニック電工株式会社 | 銀膜、銀膜の製造方法、led実装用基板、及びled実装用基板の製造方法 |
KR101718575B1 (ko) * | 2010-06-15 | 2017-03-21 | 후루카와 덴키 고교 가부시키가이샤 | 광반도체 장치용 리드 프레임, 광반도체 장치용 리드 프레임의 제조방법, 및 광반도체 장치 |
JP5089795B2 (ja) * | 2010-06-23 | 2012-12-05 | 古河電気工業株式会社 | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 |
JP5411357B2 (ja) * | 2010-09-28 | 2014-02-12 | Jx日鉱日石金属株式会社 | 圧延銅箔 |
JP5950563B2 (ja) * | 2011-12-14 | 2016-07-13 | 古河電気工業株式会社 | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 |
-
2013
- 2013-08-30 KR KR1020167002836A patent/KR101894160B1/ko active IP Right Grant
- 2013-08-30 CN CN201380078695.9A patent/CN105453283A/zh active Pending
- 2013-08-30 WO PCT/JP2013/073298 patent/WO2015029211A1/ja active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110031091A (zh) * | 2017-12-20 | 2019-07-19 | 德州仪器公司 | 用于引线框亮度测量的方法及*** |
Also Published As
Publication number | Publication date |
---|---|
WO2015029211A1 (ja) | 2015-03-05 |
KR20160051729A (ko) | 2016-05-11 |
KR101894160B1 (ko) | 2018-08-31 |
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Application publication date: 20160330 |