CN105453282B - 减少重复反射的成形磷光体 - Google Patents
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- 230000003252 repetitive effect Effects 0.000 title description 2
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- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 230000008859 change Effects 0.000 abstract description 8
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
预形成的波长转换元件附连到发光元件并且成形为减少全内反射的重复发生。成形元件的侧面可以是倾斜的或以其它方式成形以便在波长转换元件的光提取表面上的反射光的入射角中引入改变。预形成的波长转换元件可以配置成在发光元件的阵列之上延伸,其中在发光元件之间具有成形为减少全内反射的重复发生的特征。
Description
对相关申请的交叉引用
本申请是2014年8月12日提交且题为“SHAPED PHOSPHOR TO REDUCE REPEATEDREFLECTIONS”的国际申请No. PCT/IB2014/063865的§371申请,其要求享有2013年8月20日提交的美国临时申请No. 61/867,773的优先权。将PCT/IB2014/063865和61/867,773并入本文。
技术领域
本发明涉及发光器件的领域,并且特别地涉及具有诸如磷光体之类的波长转换材料的发光器件。
背景技术
半导体发光器件不断扩大的使用已经产生针对这些器件的高度竞争性的市场。在该市场中,性能和价格通常对于提供厂商之间的产品区分是重要的。
用于改进器件的性能的一种技术是增加实际从器件发射的所生成的光的比例,并且对应地减少在器件内俘获并最终吸收的光的量。在不是光提取表面的器件表面上使用反射体是用于朝向光提取表面重定向光的常见技术,如在器件侧面上使用反射体那样。
图1A-1B图示了具有反射侧面的示例现有技术发光器件的制造,并且图1C图示了来自这样的器件的光发射。
在图1A中,通常称为基板的衬底110包括金属迹线120以用于典型地经由焊料凸块130将外部电源耦合到发光元件150。底部填充材料140向发光元件150提供机械支撑;底部填充材料140可以是反射性的。
在该示例中,波长转换元件160位于发光元件150的发光表面155上方。波长转换元件吸收由发光元件150发射的一些光并且发射以不同波长的光。从发光元件150发射的光和由波长转换元件160发射的光的混合物从光提取表面165离开器件。
在图1B中,应用反射材料170以围绕器件,使得撞击波长转换元件160的侧面/边缘162的光可以朝向光提取表面165重定向。
随后可以对衬底110进行切分/切片以提供经单分的器件。可选地,在单分器件之前或之后,可以模制或以其它方式形成诸如环氧树脂之类的保护材料以封装发光器件,并且可以对其进行成形以提供特定光学效果。
图1C图示了来自器件的提取表面165的示例光发射。表面165形成波长转换元件160与周围介质之间的界面,并且波长转换元件和周围介质的折射率将限定针对光提取的临界角,并且该临界角将在表面165上的每一个点处限定逸出锥体168。以小于临界角(即在逸出锥体内)的相对于表面法向的角度撞击表面的光101,102将通过表面逸出;以大于临界角的角度撞击表面的光106,107将经历全内反射(TIR),并且将被反射离开光提取表面165。如下文进一步详述的,在波长转换元件160内全内反射的光很可能被重复地全内反射,并且因此非常有可能在发光器件内被吸收。
发明内容
将有利的是减少具有波长转换元件的发光器件内所吸收的光的量,从而允许这样的光离开光提取表面,从而改进光提取效率。还将有利的是改进从具有波长转换元件的发光器件的阵列所发射的光的均匀性。
为了更好地解决这些关注点中的一个或多个,在本发明的实施例中,对预形成的波长转换元件进行成形以减少全内反射的重复发生。成形元件的侧面可以是倾斜的或者可以是其它形状以便在光提取表面上的反射光的入射角中引入改变。预形成的波长转换元件可以配置成在发光元件的阵列之上延伸,其中在发光元件之间具有成形为减少全内反射的重复发生的特征。
当光在直线结构内全内反射时,撞击相对(平行)表面的反射光将以相同入射角撞击它。如果来自上表面或下表面的反射光撞击直线结构的侧面,则其将以与表面上的入射角垂直的入射角撞击它。当来自侧面的反射光撞击上表面或下表面时,其将以与侧面上的入射角垂直的入射角撞击它。因此,从表面向侧面并且然后向相对表面反射的光将以与第一表面上的原始入射角相同的入射角撞击相对表面。在示例现有技术发光器件中,由于全内反射而不能从光提取表面165逸出的光将以相同入射角重复地撞击该表面165并且俘获在发光器件内直到其最终被吸收。尽管在光重进入发光元件150时角度改变可能由于表面155处的折射而发生,但是直线结构150,160的对称性质将往往导致重复的全内反射。
如果波长转换元件被成形以便呈现平行表面之间的非垂直表面,而不是常规垂直侧壁,则从非垂直表面反射的光将不以相同入射角撞击相对表面。因为入射角在其从非垂直表面反射之后改变,所以反射光在逸出锥体内最终撞击光提取表面的几率增加,从而增加光提取效率。可替换地或此外,入射角可以通过提供漫反射表面而改变。
附图说明
参照附图,进一步详细地并且通过示例的方式来解释本发明,其中:
图1A-1B图示了具有反射侧面的示例现有技术发光器件的制造,并且图1C图示了来自这样的器件的示例发射。
图2A-2B图示了具有成形波长转换元件的示例发光器件的制造,并且图2C图示了来自这样的器件的示例发射。
图3图示了预形成的波长转换元件的示例形状。
图4图示了对波长转换片的示例切分以形成具有非垂直侧壁的波长转换板片(platelet)。
图5A-5E图示了位于发光元件的阵列上的示例成形波长转换元件。
贯穿各图,相同的参考标号指示类似或对应的特征或功能。出于说明性目的而包括各图并且其不意图限制本发明的范围。
具体实施方式
在以下描述中,出于解释而非限制的目的,阐述具体细节,诸如特定架构、界面、技术等,以便提供对本发明的概念的透彻理解。然而,对本领域技术人员而言将显而易见的是,可以在脱离这些具体细节的其它实施例中实践本发明。以类似方式,该描述的文本针对如图中所图示的示例实施例,并且不意图超出权利要求中所明确包括的限制之外地限制所要求保护的发明。出于简单且清楚的目的,省略公知器件、电路和方法的详细描述以免以非必要的细节使本发明的描述晦涩难懂。
如上文指出的,常规预形成的波长转换元件的垂直性质使得经内部反射的光以相同入射角撞击相对表面,从而引起反射光在发光器件内的连续再循环直到其最终被吸收。依照本发明的各方面,预形成的波长转换元件被成形以便提供非垂直镜面反射表面,以便在经内部反射的光的入射角中引入变化。依照本发明的其它方面,预形成的波长转换元件被成形以便提供一个或多个漫反射表面以便在经内部反射的光的入射角中引入变化。
在示例实施例中,假定反射表面为镜面反射,除非以其它方式指明。当在本文中使用该术语时,“反射表面”是在表面位于发光器件中时反射从发光元件发射的光的表面。也就是说,附连到波长转换元件的表面的材料可以是在表面处引起反射的反射材料。
图2A-2B图示了具有成形波长转换元件260的示例发光器件200的制造,所述成形波长转换元件260具有与光提取表面265非垂直的倾斜侧壁262。如图2A中所图示的,预形成的波长转换元件260附连到发光元件150的发光表面155。可以使用任何数目的附连技术,包括例如使用粘合剂、键合等等。在一些实施例中,发光表面155被粗糙化以增强来自发光元件150的光提取效率。
如图2B中所图示的,应用反射材料170以便反射可能撞击侧壁262的光。因为侧壁262与光提取表面265非垂直,所以反射光将以与光在侧壁262上的入射角非垂直的角度撞击表面265或表面155。
图2C图示了来自发光器件200的示例发射。如图1C的示例中那样,在逸出锥体168内撞击光提取表面265的光201将通过表面265逸出。
以处于逸出锥体168外部的入射角撞击光提取表面265的光206经历全内反射。如与图1C的现有技术示例相对照的,当反射光从非垂直侧壁262反射时,其不以与光206在提取表面265上的入射角垂直的角度撞击侧壁262。因而,从侧壁262反射的光以与原始经内部反射的光206的入射角不同的入射角撞击表面265或表面155。
在图2C的示例中,在镜面反射的情况下,经内部反射的光206从侧壁262反射并且在逸出锥体168内撞击提取表面265。因为反射光现在以逸出锥体168内的入射角撞击表面265,所以其作为光206a而通过表面265逸出。以类似方式,原本如果侧壁262与表面265垂直则将从表面265经内部反射的光207在逸出锥体168内撞击表面265并且作为光207a而通过表面265逸出。
要指出的是,即便从侧壁262反射的光不立即在逸出锥体168内撞击表面265,来自侧壁262的随后反射也将在光随后撞击表面265时改变光的入射角,并且最终这些反射之一可能在逸出锥体内撞击表面265并且通过表面265逸出。反之,具有与提取表面165垂直的侧壁的现有技术发光器件不向表面165上的入射角引入显著改变,经内部反射的光离开表面165的几率基本上为零。
图3图示了预形成的波长转换元件的示例形状。在图3中,波长转换元件360的四个侧壁362中的每一个倾斜成“远离”发光元件150,这类似于图2A-2C所图示的侧壁262。然而,因为经内部反射的光的路径中的任何非垂直表面的引入将向光提取表面上的入射角引入改变,所以侧壁的倾斜不需要处于任何特定取向。
具有非垂直表面的预形成的形状可以使用各种技术中的任一个来形成,包括锯切、研磨、镂铣(routing)、蚀刻等等。在一些实施例中,用于形成非垂直表面的技术可以取决于用于创建预形成的波长转换元件的材料。
在一些实施例中,可以形成具有嵌入的波长转换颗粒的结晶材料片并且随后对其进行切分以创建具有倾斜侧壁的“板片”。常规的锯切刀片可以取向成以便提供斜接切口,诸如图4中所图示的。在该实施例中,刀片以两个角度进行取向以制作相对切口410,420,从而形成板片460-1,460-2,460-3,460-4,460-5,每一个具有梯形轮廓。
非垂直侧壁的引入不限于位于各个发光元件上的板片。图5A-5E图示了位于衬底510上的发光元件150a-150d的阵列上的示例成形波长转换元件560a-560e。尽管仅图示了发光元件的一个阵列,但是衬底510可以包括发光元件的多个阵列。出于本公开的目的,术语“阵列”以通用含义进行使用,并且包括发光元件的任何有序布置,包括发光元件的“行”或“带”、发光元件的“环”等等。尤其要指出的是,发光元件的阵列布置成使得每一个发光元件的发光表面相对于彼此的位置是已知的。
如图5A中所图示的,单个波长转换元件560a被成形以便在安装于衬底510上的发光元件150a-150d的阵列的发光表面155a-155d之上延伸。衬底510可以是基板、印刷电路板或者其它安装表面。在一些实施例中,衬底510可以对应于在发光元件150a-150d的晶片级处理期间将发光元件形成或转移到其上的晶片。如上文指出的,可以使用各种技术中的任一个来将波长转换元件560a附连到发光表面155a-155d,并且表面155a-155d可以被粗糙化以增强来自发光元件150a-150d的光提取。
波长转换元件560a包括位于发光表面155a-155d之间且不与光提取表面565垂直的倾斜特征562a。反射材料位于由倾斜特征562a形成的裂缝内。在该示例中,倾斜特征562a在功能上类似于图2A-2C的侧壁262。当来自发光表面565的经内部反射的光撞击反射倾斜特征562a时,引入针对与提取表面565有关的随后入射角的改变。
尽管倾斜特征562a被图示为位于每一个发光表面155a-155d之间,但是其它实施例可以具有更少的特征,诸如每隔一个发光表面155a-155d之间的倾斜特征,或者取决于离中心的距离的特征的变化浓度,等等。特征的形状和位置可以基于光学模型的模拟或者基于实验以实现期望的光输出图案。
重要的是要指出,跨多个发光元件延伸的单个磷光体元件的使用促进比具有分立磷光体元件的发光器件的阵列更均匀的光输出分布。倾斜特征的形状和位置可以选择成通过增强从发光元件之间的区逸出的光的量来进一步增强该均匀性。
在图5B的示例中,特征562b与上表面565平行,但是被创建成以便漫反射从表面565内部反射的光。除提供对撞击特征562b的光的入射角的改变之外,漫反射可以服务于增加在每一个特征562b上方的区中离开表面565的光的量,从而进一步增强来自表面565的光输出的均匀性。
在该示例中,外表面562a是镜面反射的并且其倾斜服务于改变经内部反射的光的入射角,如在图5A的示例中那样。然而,本领域技术人员将认识到,外表面562a也可以是漫反射的,从而消除对于倾斜表面的需要。
在图5C中,波长转换元件560c被预处理以在由倾斜特征562c形成的每一个裂缝内应用反射材料566。在一些实施例中,在形成特征562c之后向波长转换元件560c的底侧应用反射材料566的层,然后从特征562c之间的平坦部分561移除反射材料566的层。在其它实施例中,经由覆盖平坦部分561的模板应用反射材料566。通过向由特征562c形成的裂缝应用反射材料566,器件的效率更少地取决于裂缝内的底层材料的应用和反射质量。
在图5D中,波长转换元件560d包括元件560d的周界附近的倾斜壁568以减少光提取区域并且增加来自器件的光的表观强度。
本领域技术人员将认识到,本发明的实施例不限于平面壁和特征。在图5E中,波长转换元件560e包括半球形特征562e。
在实施例5A-5E中的每一个中,特征562a-562e可以通过各种技术中的任一个来形成,包括以特定形状的钻头镂铣或者研磨、蚀刻等等。
虽然已经在附图和前述描述中详细图示和描述了本发明,但是这样的图示和描述要被视为是说明性或示例性而非限制性的;本发明不限于所公开的实施例。
例如,为了利用镜面反射以及漫反射,一个或多个反射表面可以是提供镜面反射和漫反射二者的表面。在这样的实施例中,由表面提供的镜面反射和漫反射的比例可以选择成进一步增强跨器件表面的光输出均匀性。
本领域技术人员在实践要求保护的发明时,通过研究附图、公开内容和随附权利要求,可以理解和实现对所公开的实施例的其它变型。在权利要求中,词语“包括”不排除其它元件或步骤,并且不定冠词“一”或“一个”不排除多个。单个处理器或其它单元可以履行在权利要求中叙述的若干项的功能。在相互不同的从属权利要求中叙述某些措施的仅有事实不指示这些措施的组合不能用于获益。权利要求中的任何参考标记不应当解释为限制范围。
Claims (18)
1.一种发光器件,包括:
多个发光元件,以及
附连到所述多个发光元件中的每一个的发光表面的预形成的波长转换元件,预形成的波长转换元件包括:
光提取表面;以及
既不垂直于也不平行于预形成的波长转换元件的光提取表面的多个反射侧表面,每个反射侧表面位于所述多个发光元件中的至少两个发光元件之间,并且包括沿所述多个发光元件中的至少一个发光元件的发光表面的周界的边缘,
其中多个反射侧表面布置成取决于离预形成的波长转换元件的中心部分的距离的变化浓度。
2.权利要求1所述的器件,其中多个反射侧表面包括波长转换元件的侧壁。
3.权利要求1所述的器件,其中反射涂层形成预形成的波长转换元件的多个反射侧表面的至少一个反射侧表面。
4.权利要求1所述的器件,其中多个反射侧表面的至少一个反射侧表面是倾斜平面表面。
5.权利要求1所述的器件,其中多个反射侧表面的至少一个反射侧表面是镜面反射的。
6.权利要求1所述的器件,其中预形成的波长转换元件是跨多个发光元件延伸的单个元件。
7.权利要求6所述的器件,其中多个反射侧表面的至少一个反射侧表面是位于至少一些发光表面之间的多个反射侧表面之一。
8.权利要求6所述的器件,其中反射涂层形成多个反射侧表面的至少一个反射侧表面中的每一个反射侧表面。
9.权利要求6所述的器件,其中多个反射侧表面的至少一个反射侧表面中的每一个反射侧表面是倾斜平面表面。
10.一种衬底,包括:
电气耦合到衬底上的电路迹线的多个发光元件,以及
附连到多个发光元件的发光表面的多个预形成的波长转换元件,
多个发光元件的预形成的波长转换元件中的每一个包括:
光提取表面;以及
多个反射侧表面,多个反射侧表面在多个发光元件中的至少两个发光元件之间的位置处,既不垂直于也不平行于波长转换元件的光提取表面,每个反射侧表面包括沿至少两个发光元件之一的发光表面的周界的边缘,
其中多个反射侧表面布置成取决于离预形成的波长转换元件的中心部分的距离的变化浓度。
11.权利要求10所述的衬底,其中多个反射侧表面的至少一个反射侧表面包括波长转换元件的侧壁。
12.权利要求10所述的衬底,其中反射涂层形成预形成的波长转换元件的至少一个反射侧壁。
13.权利要求10所述的衬底,其中多个反射侧表面的至少一个反射侧表面是倾斜平面表面。
14.权利要求10所述的衬底,其中多个反射侧表面的至少一个反射侧表面取向成以便提供比发光表面在给定维度中的范围更小的光提取区域在给定维度中的范围。
15.权利要求12所述的衬底,其中所述多个预形成的波长转换元件中的每一个预形成的波长转换元件附连到多于一个发光表面。
16.权利要求12所述的衬底,其中多个反射侧表面的至少一个反射侧表面是镜面反射的。
17.一种方法,包括:
在衬底上提供多个发光元件,以及
将预形成的波长转换元件附连到多个发光元件中的每一个发光元件的发光表面,预形成的波长转换元件包括:
光提取表面;以及
多个反射侧表面,多个反射侧表面在多个发光元件中的至少两个发光元件之间的位置处,既不垂直于也不平行于预形成的波长转换元件的光提取表面,每个反射侧表面包括沿所述至少两个发光元件之一的发光表面的周界的边缘,
其中多个反射侧表面布置成取决于离预形成的波长转换元件的中心部分的距离的变化浓度。
18.权利要求17所述的方法,其中多个反射侧表面的至少一个反射侧表面是镜面反射的。
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US201361867773P | 2013-08-20 | 2013-08-20 | |
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US (2) | US10109774B2 (zh) |
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Also Published As
Publication number | Publication date |
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CN105453282A (zh) | 2016-03-30 |
US20190067534A1 (en) | 2019-02-28 |
JP6694815B2 (ja) | 2020-05-20 |
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WO2015025247A1 (en) | 2015-02-26 |
EP3036777A1 (en) | 2016-06-29 |
US10109774B2 (en) | 2018-10-23 |
US11171266B2 (en) | 2021-11-09 |
KR102231532B1 (ko) | 2021-03-24 |
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