CN105449050B - 一种晶体硅太阳能电池组件的制备方法 - Google Patents
一种晶体硅太阳能电池组件的制备方法 Download PDFInfo
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- CN105449050B CN105449050B CN201610014848.9A CN201610014848A CN105449050B CN 105449050 B CN105449050 B CN 105449050B CN 201610014848 A CN201610014848 A CN 201610014848A CN 105449050 B CN105449050 B CN 105449050B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 121
- 239000010703 silicon Substances 0.000 title claims abstract description 121
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 239000013078 crystal Substances 0.000 title claims abstract description 117
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000003475 lamination Methods 0.000 claims abstract description 36
- 230000005611 electricity Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 18
- 238000012545 processing Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 description 33
- 239000005038 ethylene vinyl acetate Substances 0.000 description 22
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 22
- 239000005336 safety glass Substances 0.000 description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 238000012360 testing method Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005424 photoluminescence Methods 0.000 description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000012216 screening Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102100036219 Cyclic nucleotide-gated olfactory channel Human genes 0.000 description 1
- 101000875054 Homo sapiens Cyclic nucleotide-gated olfactory channel Proteins 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
Classifications
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- H01L31/03767—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
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- Fluid Mechanics (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
组别 | 光衰比例平均值(%) | 均匀性描述 |
实施例1 | 1 | 均匀性较好 |
对比例1 | 2.4 | 均匀性较好 |
实施例2 | 1.1 | 均匀性较好 |
对比例2 | 5.2 | 均匀性较好 |
实施例3 | 1.2 | 均匀性较好 |
对比例3 | 1.5 | 均匀可接受 |
Claims (6)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610014848.9A CN105449050B (zh) | 2016-01-08 | 2016-01-08 | 一种晶体硅太阳能电池组件的制备方法 |
US15/155,713 US9722117B1 (en) | 2016-01-08 | 2016-05-16 | Method for manufacturing crystalline silicon solar cell modules |
MA041588A MA41588A (fr) | 2016-01-08 | 2016-05-18 | Procédé de fabrication de modules de cellules solaires en silicium cristallin |
EP16170504.1A EP3190630B1 (en) | 2016-01-08 | 2016-05-19 | Method for manufacturing crystalline silicon solar cell modules |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610014848.9A CN105449050B (zh) | 2016-01-08 | 2016-01-08 | 一种晶体硅太阳能电池组件的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105449050A CN105449050A (zh) | 2016-03-30 |
CN105449050B true CN105449050B (zh) | 2017-12-29 |
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Country Status (4)
Country | Link |
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US (1) | US9722117B1 (zh) |
EP (1) | EP3190630B1 (zh) |
CN (1) | CN105449050B (zh) |
MA (1) | MA41588A (zh) |
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CN107240622A (zh) * | 2017-06-08 | 2017-10-10 | 合肥华盖光伏科技有限公司 | 一种自粘型晶体硅太阳能电池组件组装工艺 |
CN113224206A (zh) * | 2021-04-29 | 2021-08-06 | 南通强生光电科技有限公司 | 一种多晶硅太阳能电池及其制备方法 |
CN114388643A (zh) * | 2021-12-31 | 2022-04-22 | 南通强生光电科技有限公司 | 一种晶体硅太阳能电池组件及其封装方法 |
Citations (3)
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CN101533872A (zh) * | 2009-04-29 | 2009-09-16 | 淮安伟豪新能源科技有限公司 | 晶硅太阳能光伏电池组封装工艺 |
CN102157582A (zh) * | 2011-01-20 | 2011-08-17 | 山东舜亦新能源有限公司 | 一种组件生产过程中的封装工艺 |
CN103762275A (zh) * | 2014-01-17 | 2014-04-30 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池片的衰减方法及衰减装置 |
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US20060283495A1 (en) * | 2005-06-06 | 2006-12-21 | Solaria Corporation | Method and system for integrated solar cell using a plurality of photovoltaic regions |
US20110017267A1 (en) * | 2009-11-19 | 2011-01-27 | Joseph Isaac Lichy | Receiver for concentrating photovoltaic-thermal system |
US20110271999A1 (en) * | 2010-05-05 | 2011-11-10 | Cogenra Solar, Inc. | Receiver for concentrating photovoltaic-thermal system |
US20130037107A1 (en) * | 2011-08-08 | 2013-02-14 | Du Pont Apollo Ltd. | Adhesive layer for photovoltaic module |
DE102011056843A1 (de) * | 2011-12-21 | 2013-06-27 | Centrotherm Photovoltaics Ag | Verfahren zur Stabilisierung eines Wirkungsgrades von Siliziumsolarzellen |
CN105074940B (zh) * | 2013-02-27 | 2017-04-26 | 日本瑞翁株式会社 | 太阳能电池组件及其制造方法 |
KR102230171B1 (ko) * | 2013-07-26 | 2021-03-22 | 뉴사우스 이노베이션즈 피티와이 리미티드 | 실리콘에서의 열처리 |
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2016
- 2016-01-08 CN CN201610014848.9A patent/CN105449050B/zh active Active
- 2016-05-16 US US15/155,713 patent/US9722117B1/en active Active
- 2016-05-18 MA MA041588A patent/MA41588A/fr unknown
- 2016-05-19 EP EP16170504.1A patent/EP3190630B1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101533872A (zh) * | 2009-04-29 | 2009-09-16 | 淮安伟豪新能源科技有限公司 | 晶硅太阳能光伏电池组封装工艺 |
CN102157582A (zh) * | 2011-01-20 | 2011-08-17 | 山东舜亦新能源有限公司 | 一种组件生产过程中的封装工艺 |
CN103762275A (zh) * | 2014-01-17 | 2014-04-30 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池片的衰减方法及衰减装置 |
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US9722117B1 (en) | 2017-08-01 |
US20170200844A1 (en) | 2017-07-13 |
CN105449050A (zh) | 2016-03-30 |
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