CN105449036B - 一种用于丝网印刷不良片的返工处理方法 - Google Patents
一种用于丝网印刷不良片的返工处理方法 Download PDFInfo
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- CN105449036B CN105449036B CN201510872005.8A CN201510872005A CN105449036B CN 105449036 B CN105449036 B CN 105449036B CN 201510872005 A CN201510872005 A CN 201510872005A CN 105449036 B CN105449036 B CN 105449036B
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- screen printing
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- 238000007650 screen-printing Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 66
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims description 15
- 238000005554 pickling Methods 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011259 mixed solution Substances 0.000 claims description 10
- 238000003672 processing method Methods 0.000 claims description 10
- 230000002000 scavenging effect Effects 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 3
- 230000002950 deficient Effects 0.000 abstract description 12
- 239000004332 silver Substances 0.000 abstract description 8
- 229910052709 silver Inorganic materials 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- -1 aluminum ions Chemical class 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 238000004506 ultrasonic cleaning Methods 0.000 abstract 2
- 230000008569 process Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
Description
开路电压 | 短路电流 | 串联电阻 | 并联电阻 | 填充因子 | 转换效率 | 反向漏电 | |
传统方法印刷后 | 0.6315 | 8.6504 | 0.0015 | 75.39 | 79.33 | 17.81 | 1.0153 |
本发明方法印刷后 | 0.6346 | 8.6908 | 0.0016 | 465.90 | 79.59 | 18.04 | 0.0394 |
Claims (3)
Priority Applications (1)
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CN201510872005.8A CN105449036B (zh) | 2015-12-03 | 2015-12-03 | 一种用于丝网印刷不良片的返工处理方法 |
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CN201510872005.8A CN105449036B (zh) | 2015-12-03 | 2015-12-03 | 一种用于丝网印刷不良片的返工处理方法 |
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CN105449036A CN105449036A (zh) | 2016-03-30 |
CN105449036B true CN105449036B (zh) | 2017-10-03 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106876521A (zh) * | 2017-02-14 | 2017-06-20 | 苏州爱康光电科技有限公司 | 一种硅太阳能电池印刷不良片返工方法 |
CN107731962B (zh) * | 2017-10-23 | 2019-05-14 | 英利能源(中国)有限公司 | 一种太阳能电池印刷返工品处理方法 |
CN112768553B (zh) * | 2020-12-30 | 2023-05-02 | 横店集团东磁股份有限公司 | 一种丝网印刷返工片的清洗方法 |
CN113889551B (zh) * | 2021-08-12 | 2023-12-01 | 中威新能源(成都)有限公司 | 光伏电池印刷不良片的回收方法及返工方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102306683A (zh) * | 2011-09-09 | 2012-01-04 | 浙江嘉毅能源科技有限公司 | 一种经丝网印刷后返工硅片的处理方法 |
CN102437234A (zh) * | 2011-10-31 | 2012-05-02 | 浙江宝利特新能源股份有限公司 | 一种太阳能电池片印刷返工次品的处理方法 |
CN103400890A (zh) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | 一种晶硅太阳电池pecvd色差片去膜重镀的返工工艺 |
Family Cites Families (1)
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JP4482844B2 (ja) * | 2000-05-31 | 2010-06-16 | 栗田工業株式会社 | ウェハの洗浄方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102306683A (zh) * | 2011-09-09 | 2012-01-04 | 浙江嘉毅能源科技有限公司 | 一种经丝网印刷后返工硅片的处理方法 |
CN102437234A (zh) * | 2011-10-31 | 2012-05-02 | 浙江宝利特新能源股份有限公司 | 一种太阳能电池片印刷返工次品的处理方法 |
CN103400890A (zh) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | 一种晶硅太阳电池pecvd色差片去膜重镀的返工工艺 |
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