CN105448673A - 一种碳化硅器件背面欧姆接触的制作方法 - Google Patents
一种碳化硅器件背面欧姆接触的制作方法 Download PDFInfo
- Publication number
- CN105448673A CN105448673A CN201610003058.0A CN201610003058A CN105448673A CN 105448673 A CN105448673 A CN 105448673A CN 201610003058 A CN201610003058 A CN 201610003058A CN 105448673 A CN105448673 A CN 105448673A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- back side
- carbon film
- carbide plate
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 171
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 70
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 92
- 238000000137 annealing Methods 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000003763 carbonization Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 238000001994 activation Methods 0.000 abstract description 11
- 229910018540 Si C Inorganic materials 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000000859 sublimation Methods 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 11
- 230000004913 activation Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610003058.0A CN105448673B (zh) | 2016-01-04 | 2016-01-04 | 一种碳化硅器件背面欧姆接触的制作方法 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201610003058.0A CN105448673B (zh) | 2016-01-04 | 2016-01-04 | 一种碳化硅器件背面欧姆接触的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105448673A true CN105448673A (zh) | 2016-03-30 |
CN105448673B CN105448673B (zh) | 2018-05-18 |
Family
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Family Applications (1)
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CN201610003058.0A Active CN105448673B (zh) | 2016-01-04 | 2016-01-04 | 一种碳化硅器件背面欧姆接触的制作方法 |
Country Status (1)
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CN (1) | CN105448673B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024597A (zh) * | 2016-05-30 | 2016-10-12 | 北京世纪金光半导体有限公司 | 一种碳化硅欧姆接触形成方法 |
CN106653827A (zh) * | 2016-12-27 | 2017-05-10 | 西安电子科技大学 | 具有可变角度沟槽结终端扩展终端结构及其制备方法 |
CN109037041A (zh) * | 2018-09-21 | 2018-12-18 | 黄兴 | 一种碳化硅的欧姆接触的制备方法及器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020179910A1 (en) * | 2001-03-15 | 2002-12-05 | Slater David B. | Low temperature formation of backside ohmic contacts for vertical devices |
WO2005076327A1 (ja) * | 2004-02-06 | 2005-08-18 | Matsushita Electric Industrial Co., Ltd. | 炭化珪素半導体素子及びその製造方法 |
US20090209090A1 (en) * | 2008-02-15 | 2009-08-20 | Hitachi, Ltd. | Manufacturing method of semiconductor device |
CN103354208A (zh) * | 2013-05-20 | 2013-10-16 | 泰科天润半导体科技(北京)有限公司 | 一种碳化硅沟槽型jfet的制作方法 |
-
2016
- 2016-01-04 CN CN201610003058.0A patent/CN105448673B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020179910A1 (en) * | 2001-03-15 | 2002-12-05 | Slater David B. | Low temperature formation of backside ohmic contacts for vertical devices |
WO2005076327A1 (ja) * | 2004-02-06 | 2005-08-18 | Matsushita Electric Industrial Co., Ltd. | 炭化珪素半導体素子及びその製造方法 |
US20090209090A1 (en) * | 2008-02-15 | 2009-08-20 | Hitachi, Ltd. | Manufacturing method of semiconductor device |
CN103354208A (zh) * | 2013-05-20 | 2013-10-16 | 泰科天润半导体科技(北京)有限公司 | 一种碳化硅沟槽型jfet的制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024597A (zh) * | 2016-05-30 | 2016-10-12 | 北京世纪金光半导体有限公司 | 一种碳化硅欧姆接触形成方法 |
CN106653827A (zh) * | 2016-12-27 | 2017-05-10 | 西安电子科技大学 | 具有可变角度沟槽结终端扩展终端结构及其制备方法 |
CN109037041A (zh) * | 2018-09-21 | 2018-12-18 | 黄兴 | 一种碳化硅的欧姆接触的制备方法及器件 |
Also Published As
Publication number | Publication date |
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CN105448673B (zh) | 2018-05-18 |
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CP01 | Change in the name or title of a patent holder |
Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20201019 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
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