CN105439120A - Preparation method and application of high-purity carbon - Google Patents
Preparation method and application of high-purity carbon Download PDFInfo
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- CN105439120A CN105439120A CN201510920643.2A CN201510920643A CN105439120A CN 105439120 A CN105439120 A CN 105439120A CN 201510920643 A CN201510920643 A CN 201510920643A CN 105439120 A CN105439120 A CN 105439120A
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
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- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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Abstract
The invention discloses preparation method and application of high-purity carbon. According to the preparation method, a carbon material is placed in vacuum, a nitrogen atmosphere or an argon atmosphere and maintained at a temperature of 800 to 3500 DEG C and a pressure of 0.01 to 1 MPa for 2 to 8 h so as to prepare the high-purity carbon with carbon content of 99.99%. The high-purity carbon prepared in the invention provides a high-purity carbon base material for development and application of electronic, optical or medicinal products. By controlling the ranges of temperature and pressure, the preparation method for the high-purity carbon rapidly and highly efficiently removes impurities in the carbon material through gasification or gasification and decomposition of the mpurities in the carbon material in virtue of high temperature; the preparation method is simple in process and convenient to operate, does not need any complex chemical reaction for preparation of the high-purity carbon, has wide application prospects and is worth promotion in the industry; and the prepared high-purity carbon has high purity and good electrical and biological properties and is especially applicable as a high-purity carbon base material for development and application of electronic, optical or medicinal products.
Description
Technical field
The invention belongs to technical field of production of high-purity carbon, be specifically related to a kind of preparation method and its usage of high-purity carbon.
Background technology
Carbon has a lot of existence form at occurring in nature, and carbon compound is the chemical substance enriched very much, and carbon is bioelement.Its simple substance also has a lot of form as unformed, laminate structure (sheet, spherical, tubulose), tetrahedroid structure etc.The naturally occurring carbon of occurring in nature is based on graphite and diamond, and natural graphite impurity is often higher, and diamond is a kind of high-purity carbon, and therefore diamond is able to widespread use at subjects such as optics, electronics and mechanical workouts.Nearly all organism is all take carbon as the organic molecule that main chain is formed, so the artificial manufacture of charcoal is relatively simple, burn incompletely is carried out to organism and can obtain charcoal, but the charcoal formed like this has a lot of impurity, as ash contents such as metal, metal oxide, silicon oxide compound and calcium oxygenate.Impure charcoal is subject to a lot of restriction in actual application, and diamond is also limited as a kind of natural resource, and it is also very limited in the application aware in the such as field such as medical science, electricity and optics.So preparation high-purity carbon can play a role in promoting to electricity, optics, calorifics and life science etc. under existing cognitive condition for us.
Summary of the invention
The object of the invention is to solve the problem, provide a kind of high-purity carbon preparation method and its usage, this preparation method is simple to operate, and the carbon content of obtained high-purity carbon is high and resistivity is little.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of preparation method of high-purity carbon, carbonaceous material is placed in vacuum or inert atmosphere, simultaneously 800 ~ 3500 DEG C, under 0.01 ~ 1MPa condition, be incubated 2 ~ 8 hours, namely obtained carbon content can reach the high-purity carbon of 99.99%.
In technique scheme, described carbonaceous material is at least one in gac, carbon black, graphite, carbon aerogels, microcrystalline carbon and diamond.
In technique scheme, described gac comprises coconut husk charcoal, bamboo charcoal, coke and asphalt carbon.
In technique scheme, described carbon black comprises channel black, dim, acetylene black, channel black and furnace black.
In technique scheme, described graphite comprises natural graphite and synthetic graphite.
In technique scheme, the carbon content of obtained high-purity carbon is 99% ~ 99.99%.
In technique scheme, the resistivity of obtained high-purity carbon is 6 × 10
-6 ~ 11 × 10
-5.
Common melting point substance (boiling point) is generally below 2000 DEG C, only has the boiling point of only a few material more than 3000 DEG C, as tungsten and alloy material thereof.And the boiling point of carbon atom is considerably beyond 3000 DEG C.Therefore by high temperature, other gasification substances in carbonaceous material or gasification are decomposed, the material of gasification is taken away by the method for being aspirated by gas, only leaves carbon, i.e. obtained high-purity carbon.What deserves to be explained is, in the present invention, temperature of reaction is 800 ~ 3500 DEG C, because carbonaceous material is different, its impurities is different, therefore wherein 800 DEG C of minimum temperatures that are the impurity gasification that makes carbonaceous material mid-boiling point minimum, and preferable reaction temperature is 2000 ~ 3500 DEG C.In the present invention, soaking time 2 ~ 8 hours, within 2 hours, be wherein the shortest time that in carbonaceous material, foreign matter content tends towards stability, preferred soaking time is 2 ~ 4 hours.Further, vacuum or inert atmosphere are to provide oxygen-free environment, and wherein, inert atmosphere can be nitrogen atmosphere or argon gas atmosphere.
It should be noted that, in the present invention, to gac, carbon black, graphite, carbon aerogels, microcrystalline carbon and diamond, all without particular requirement, buy by market and obtain.
In technique scheme, obtained high-purity carbon is used for providing high-purity carbon base mateiral for electronics, optics or pharmaceutical industries product development and application.
The invention has the beneficial effects as follows: the preparation method of high-purity carbon provided by the invention, by control temperature, pressure range, utilize high temperature that the impurity gasification in carbonaceous material or gasification are decomposed, rapidly and efficiently remove carbonaceous material impurities, technique is simple, simple operation, does not need complicated chemical reaction can obtain the high-purity carbon of high purity 99.99%, have broad application prospects, be worth popularization in the field of business.High-purity carbon purity prepared by preparation method provided by the invention is high, has good electrical and biology performance, is particularly useful for for electronics, optics or pharmaceutical industries product development and application provide high-purity carbon base mateiral.
Accompanying drawing explanation
Fig. 1 is the energy spectrum analysis figure of microcrystalline carbon obtain to by carbonaceous material high-purity carbon in the embodiment of the present invention 4, and wherein scheming A is high-carbon sample drawing, and figure B is high-purity carbon electronic energy spectrum.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described further:
Below will with acetylene black, microcrystalline carbon, natural graphite, synthetic graphite for carbonaceous material, high purity carbon under different technology conditions respectively, acetylene black, microcrystalline carbon, natural graphite, synthetic graphite are without each performance perameter during preparation method's process provided by the invention, as shown in table 1:
Table 1: carbonaceous material property parameter
Embodiment 1
With acetylene black, microcrystalline carbon, natural graphite, synthetic graphite for carbonaceous material, in nitrogen atmosphere, in 800 DEG C, under 1MPa condition, be incubated 2 hours, obtained high-purity carbon.
Embodiment 2
With acetylene black, microcrystalline carbon, natural graphite, synthetic graphite for carbonaceous material, in argon atmosphere, in 2000 DEG C, under 1MPa condition, be incubated 4 hours, obtained high-purity carbon.
Embodiment 3
With acetylene black, microcrystalline carbon, natural graphite, synthetic graphite for carbonaceous material, in nitrogen atmosphere, in 3000 DEG C, under 1MPa condition, be incubated 4 hours, obtained high-purity carbon.
Embodiment 4
With acetylene black, microcrystalline carbon, natural graphite, synthetic graphite for carbonaceous material, in a vacuum, in 3500 DEG C, under 0.01MPa condition, be incubated 4 hours, obtained high-purity carbon.
To in embodiment 1 ~ 4, carry out ultimate analysis with the high-purity carbon that acetylene black, microcrystalline carbon, natural graphite, synthetic graphite obtain respectively for carbonaceous material, result is as shown in table 2:
Table 2: the high-purity carbon results of elemental analyses that embodiment 1 ~ 4 obtains
To in embodiment 4, carry out ultimate analysis and electricity, biology test with acetylene black, microcrystalline carbon, natural graphite, synthetic graphite for high-purity carbon that carbonaceous material obtains respectively, result is as shown in table 3:
Table 3: the high-purity carbon ultimate analysis that embodiment 4 obtains and electricity, biology test result
| Carbon content (%) | Resistivity (Ω .m) | Toxicity (LD50) | Chinese People's Anti-Japanese Military and Political College enterobacteria (%) | |
| Acetylene black | 99.60 | 7×10 -6 | Nothing | 45 |
| Microcrystalline carbon | 99.99 | 11×10 -5 | Nothing | 78 |
| Natural graphite | 99.80 | 6×10 -6 | Nothing | 20 |
| Synthetic graphite | 99.90 | 13×10 -6 | Nothing | 22 |
As shown in Figure 1, embodiment 4 microcrystalline carbon obtain by carbonaceous material high-purity carbon can spectrogram, EDAX results is as shown in table 4:
Table 4: embodiment 4 microcrystalline carbon is obtained high-purity carbon EDAX results by carbonaceous material
From table 1 ~ 4 comparative analysis, utilize preparation method provided by the invention to prepare high-purity carbon, the carbon content of carbonaceous material all has and significantly promotes, and finally can obtain almost full carbon material.From the angle of preparation high-purity carbon, the carbon content of original carbonaceous material is higher, impurity is fewer, therefore, preferred microcrystalline carbon is as the carbonaceous material of preparation high-purity carbon, above-mentioned acetylene black, natural graphite, synthetic graphite are common commercially available prod, and microcrystalline carbon is purchased from Bazhong City Yong Run agricultural science and technology company limited.
In sum, almost all chemical subtraction is depended on compared to the preparation of high-purity carbon in prior art, not only complex process, and deal with improperly and easily cause environmental pollution, the preparation method of high-purity carbon provided by the invention, by control temperature, pressure range, utilize high temperature that the impurity gasification in carbonaceous material or gasification are decomposed, rapidly and efficiently remove carbonaceous material impurities, technique is simple, simple operation, does not need complicated chemical reaction can obtain the high-purity carbon of high purity 99.99%, have broad application prospects, be worth popularization in the field of business.High-purity carbon purity prepared by preparation method provided by the invention is high, has good electrical and biology performance, is particularly useful for for electronics, optics or pharmaceutical industries product development and application provide high-purity carbon base mateiral.
Those of ordinary skill in the art will appreciate that, embodiment described here is to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to so special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combination of not departing from essence of the present invention according to these technology enlightenment disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (8)
1. a preparation method for high-purity carbon, is characterized in that: carbonaceous material is placed in vacuum or inert atmosphere, simultaneously 800 ~ 3500 DEG C, under 0.01 ~ 1MPa condition, be incubated 2 ~ 8 hours, namely obtains the high-purity carbon that carbon content can reach 99.99%.
2. the preparation method of high-purity carbon according to claim 1, is characterized in that: described carbonaceous material is at least one in gac, carbon black, graphite, carbon aerogels, microcrystalline carbon and diamond.
3. the preparation method of high-purity carbon according to claim 2, is characterized in that: described gac comprises coconut husk charcoal, bamboo charcoal, coke and asphalt carbon.
4. the preparation method of high-purity carbon according to claim 2, is characterized in that: described carbon black comprises channel black, dim, acetylene black, channel black and furnace black.
5. the preparation method of high-purity carbon according to claim 2, is characterized in that: described graphite comprises natural graphite and synthetic graphite.
6., according to the preparation method of the arbitrary described high-purity carbon of Claims 1 to 5, it is characterized in that: the carbon content of obtained high-purity carbon is 99% ~ 99.99%.
7., according to the preparation method of the arbitrary described high-purity carbon of Claims 1 to 5, it is characterized in that: the resistivity of obtained high-purity carbon is 6 × 10
-6~ 11 × 10
-5.
8. a purposes for the high-purity carbon prepared by the preparation method of the arbitrary described high-purity carbon of claim 1 ~ 7, is characterized in that: described high-purity carbon is used for providing high-purity carbon base mateiral for electronics, optics or pharmaceutical industries product development and application.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110116999A (en) * | 2019-06-05 | 2019-08-13 | 张家港宝诚电子有限公司 | A kind of apparatus and method using paraffin preparation high-purity carbon |
Citations (4)
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|---|---|---|---|---|
| CN101357761A (en) * | 2008-09-09 | 2009-02-04 | 河南天利碳素材料有限公司 | High pure graphitic profile and preparation technique thereof |
| CN101462716A (en) * | 2008-05-05 | 2009-06-24 | 陈怀军 | Preparation technique for purifying graphite by high temperature method |
| CN102557019A (en) * | 2011-12-27 | 2012-07-11 | 黑龙江科技学院 | Method and device for producing high-purity natural graphite |
| CN103011154A (en) * | 2012-06-25 | 2013-04-03 | 黑龙江科技学院 | Internal heating type continuous high-purity natural graphite production method and internal heating type continuous high-purity natural graphite production device |
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- 2015-12-11 CN CN201510920643.2A patent/CN105439120A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101462716A (en) * | 2008-05-05 | 2009-06-24 | 陈怀军 | Preparation technique for purifying graphite by high temperature method |
| CN101357761A (en) * | 2008-09-09 | 2009-02-04 | 河南天利碳素材料有限公司 | High pure graphitic profile and preparation technique thereof |
| CN102557019A (en) * | 2011-12-27 | 2012-07-11 | 黑龙江科技学院 | Method and device for producing high-purity natural graphite |
| CN103011154A (en) * | 2012-06-25 | 2013-04-03 | 黑龙江科技学院 | Internal heating type continuous high-purity natural graphite production method and internal heating type continuous high-purity natural graphite production device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110116999A (en) * | 2019-06-05 | 2019-08-13 | 张家港宝诚电子有限公司 | A kind of apparatus and method using paraffin preparation high-purity carbon |
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Application publication date: 20160330 |