CN105430861A - Temperature-controlled low-temperature plasma generation method - Google Patents
Temperature-controlled low-temperature plasma generation method Download PDFInfo
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- CN105430861A CN105430861A CN201510938928.9A CN201510938928A CN105430861A CN 105430861 A CN105430861 A CN 105430861A CN 201510938928 A CN201510938928 A CN 201510938928A CN 105430861 A CN105430861 A CN 105430861A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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Abstract
The invention provides a temperature-controlled low-temperature plasma generation method, and belongs to the technical field of plasma discharge reactors. According to the method, a gas supply device supplies a gas with a certain pressure under the conditions of an atmospheric pressure and a room temperature; the gas is introduced into a gas control device and is transmitted to a vortex tube according to certain flow and pressure; the gas which is cooled in real time enters a plasma generator and discharges to generate a low-temperature plasma under the control of a high voltage power supply; and a temperature monitoring device can detect and display the temperature of the gas which is cooled by the vortex tube and the temperature of the generated low-temperature plasma. Through matched adjustment of the power supply voltage, the frequency and the gas pressure and flow, the controlled temperature of the low-temperature plasma from 200 DEG C to -4 DEG C is achieved; a working gas is cooled by a passive vortex tube in real time; the temperature-controlled plasma which is lower than a low temperature or even the room temperature can be obtained after the plasma generator discharges; and only the flow and the pressure of the working gas input into the vortex tube need to be adjusted in the control of the plasma temperature.
Description
Technical field
The present invention relates to a kind of low temperature plasma production method, belong to plasma discharge reactor having technical field.
Background technology
Atmos low-temperature plasma is widely used in fields such as material surface modifying, sterilization, biomedicines.When surface modification is carried out to polymer and biomaterial etc., the performance impact of temperature to material of plasma is remarkable, especially, when having bioactive object to carry out modification to cell, bacterium, skin, tissue etc., the plasma temperature reaching more than protein coagulating temperature can by direct for organism deactivation, and this will make modifying process be difficult to control; When plasma is used for etching semiconductor material, temperature can directly affect the nanostructure and surface integrity that etch.Simultaneously, the temperature of the cold plasma of material surface modifying is difficult to control usually, its temperature is generally more than room temperature, make action of plasma when material surface, be equivalent to superposition heating process, this is that plasma application is in the field such as Precision Machining and biologic medical problem demanding prompt solution.Publication number is that the patent of invention of CN100394542C describes the controlled plasma etching apparatus of a kind of gas temperature, at inlet end, gas-heated is changed to the movement velocity of gas molecule by heating wire with the temperature controlling gas, the homogeneous media in reaction chamber is distributed.Publication number is that the patent of invention of CN103165368A proposes the adjustable plasm restraint device of a kind of temperature, arrange that in the region that gas passes through the pipeline being filled with heat exchange fluid realizes the temperature of regulation and control plasm restraint device, can by the numerical value of the temperature constant of device between 50 DEG C ~ 90 DEG C.Publication number is that the patent of invention of CN103906336A describes the adjustable gas discharge plasma generating means of a kind of pressure and temp, and the pressure in employing pump steady pressure gas tank is within the scope of 0 ~ 1.1Mpa, and employing heating plate can by gas-heated to the highest 100 DEG C.Foregoing invention all adopts and to heat gas or the mode of heat exchange controls the temperature of plasma and device, cannot obtain and control room temperature and the low temperature plasma lower than room temperature state.
Summary of the invention
The invention provides a kind of low temperature plasma production method of temperature-controllable, adopt the temperature mode of carrying out again after gas cooled discharging being controlled plasma.
The present invention adopts vortex tube refrigerating gas under atmospheric pressure room temperature condition, and the form of then being discharged by bare electrode produces low temperature plasma.
A low temperature plasma production method for temperature-controllable, the method device used comprises feeder, gas control equipment, vortex tube, high voltage source, plasma generator and device for detecting temperature; Feeder provides the working gas with certain pressure, and working gas leads to gas control equipment, transfers to vortex tube according to certain flow and pressure; Working gas, after vortex tube cooling, enters plasma generator; High voltage source controls the discharge process of plasma generator, and produces low temperature plasma; Device for detecting temperature is for monitoring the temperature of the low temperature plasma of cooled working gas temperature and generation; By adjusting the air pressure, flow and the vortex tube parameter that input vortex tube, the working gas temperature of control inputs plasma generator, thus the temperature controlling the low temperature plasma produced by plasma generator; Adjusted by the cooperation of supply voltage, frequency, gas pressure and flow, realize low-temperature plasma temperature from controlled within the scope of 200 DEG C ~-4 DEG C.
The working gas that feeder provides is one or more mixing in high-purity nitrogen, argon gas, helium, chlorine, oxygen, air dry after filtration.
Described plasma generator discharge type is bare electrode electric discharge, dielectric barrier discharge or hollow cathode discharge.
Described high voltage source is DC high-voltage power supply, low-frequency high-voltage power supply, radio-frequency power supply, microwave high pressure power supply or pulsed high voltage generator.
When the air pressure of input vortex tube is 0.5MPa, when flow is 18 ~ 25mL/min, working gas is cooled to 7 DEG C ~ 1 DEG C by vortex tube, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.0kV, frequency 60kHz, through plasma generator produce the temperature of low temperature plasma be 15 DEG C ~ 4 DEG C.
When the air pressure of input vortex tube is 0.7MPa, when gas flow is 18 ~ 30mL/min, working gas is cooled to-10 DEG C ~-20 DEG C by gas cooler, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.5kV, frequency 70kHz, through plasma generator produce the temperature of low temperature plasma be 5 DEG C ~-4 DEG C.
Usefulness of the present invention is: adopt passive vortex tube to cool working gas in real time, can obtain low temperature even lower than the plasma of the temperature-controllable of room temperature after plasma generator electric discharge, and the control of plasma temperature only needs flow and the pressure of the working gas adjusting input vortex tube.
Accompanying drawing explanation
Accompanying drawing is the low temperature plasma production method schematic diagram of temperature-controllable of the present invention.
In figure: 1 feeder; 2 gas pipelines; 3 gas control equipments; 4 vortex tubes; 5 plasma generators; 6 high voltage sourcies; 7 device for detecting temperature; 8 low temperature plasmas.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
The invention provides a kind of low temperature plasma production method of temperature-controllable, use the equipment of the method to comprise feeder 1, gas pipeline 2, gas control equipment 3, vortex tube 4, plasma generator 5, high voltage source 6 and device for detecting temperature 7.
The working gas with certain pressure is provided by feeder 1, is delivered to gas control equipment 3 through gas pipeline 2, after regulating the flow of working gas and pressure, be delivered to vortex tube 4.Be delivered in plasma generator 5 through the cooled working gas of vortex tube 4, under the excitation of high voltage source 6, the front end of plasma generator 5 can produce low temperature plasma 8.Device for detecting temperature 7 can detect and show the temperature of working gas and the temperature of low temperature plasma of input plasma generator.
Embodiment 1
When room temperature 22 DEG C, supplying purity by gas cylinder is the high pure nitrogen of 99.999%, and gas pressure is 0.5MPa.Be be delivered to vortex tube after 18mL/min through gas control equipment adjust flux, adopting thermocouple digit thermometer to record cooled gas temperature is 7 DEG C.Cooled working gas is delivered to plasma generator.Plasma generator by simple alternating current low-frequency high-voltage Power supply, frequency 60kHz, voltage 3.0kV.The macro-temperature of the low temperature plasma of now plasma generator generation is about 15 DEG C.When the working gas flow of input vortex tube is increased to 25mL/min, vortex tube can by gas cooled to 1 DEG C, and the low temperature plasma macro-temperature of generation is 4 DEG C.
Embodiment 2
When room temperature 22 DEG C, adopt air compressor air feed, be delivered to gas control equipment by the compressed air drying of generation with after filtering.The gas pressure of gas control equipment control inputs vortex tube is 0.7MPa, and when flow is 18mL/min, vortex tube can by Air flow to-10 DEG C.Plasma generator is by simple alternating current low-frequency high-voltage Power supply, and frequency 70kHz, during voltage 3.5kV, can produce the low temperature plasma that macro-temperature is 5 DEG C.When the working gas flow of input vortex tube is increased to 30mL/min, working gas can be cooled to-20 DEG C by vortex tube, can produce the low temperature plasma that macro-temperature is-4 DEG C.
Claims (10)
1. a low temperature plasma production method for temperature-controllable, is characterized in that, the method device used comprises feeder, gas control equipment, vortex tube, high voltage source, plasma generator and device for detecting temperature; Feeder provides the working gas with certain pressure, and working gas leads to gas control equipment, transfers to vortex tube according to certain flow and pressure; Working gas, after vortex tube cooling, enters plasma generator; High voltage source controls the discharge process of plasma generator, and produces low temperature plasma; Device for detecting temperature is for monitoring the temperature of the low temperature plasma of cooled working gas temperature and generation; By adjusting the air pressure, flow and the vortex tube parameter that input vortex tube, the working gas temperature of control inputs plasma generator, controls the temperature of the low temperature plasma produced by plasma generator; Adjusted by the cooperation of supply voltage, frequency, gas pressure and flow, realize low-temperature plasma temperature from controlled within the scope of 200 DEG C ~-4 DEG C.
2. low temperature plasma production method according to claim 1, is characterized in that, the working gas that feeder provides is one or more mixing in nitrogen, argon gas, helium, chlorine, oxygen, air dry after filtration.
3. low temperature plasma production method according to claim 1 and 2, is characterized in that, described plasma generator discharge type is bare electrode electric discharge, dielectric barrier discharge or hollow cathode discharge.
4. low temperature plasma production method according to claim 1 and 2, is characterized in that, described high voltage source is DC high-voltage power supply, low-frequency high-voltage power supply, radio-frequency power supply, microwave high pressure power supply or pulsed high voltage generator.
5. low temperature plasma production method according to claim 3, is characterized in that, described high voltage source is DC high-voltage power supply, low-frequency high-voltage power supply, radio-frequency power supply, microwave high pressure power supply or pulsed high voltage generator.
6. the low temperature plasma production method according to claim 1,2 or 5, it is characterized in that, when the air pressure of input vortex tube is 0.5MPa, when flow is 18 ~ 25mL/min, working gas is cooled to 7 DEG C ~ 1 DEG C by vortex tube, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.0kV, frequency 60kHz, through plasma generator produce the temperature of low temperature plasma be 15 DEG C ~ 4 DEG C.
7. low temperature plasma production method according to claim 3, it is characterized in that, when the air pressure of input vortex tube is 0.5MPa, when flow is 18 ~ 25mL/min, working gas is cooled to 7 DEG C ~ 1 DEG C by vortex tube, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.0kV, frequency 60kHz, through plasma generator produce the temperature of low temperature plasma be 15 DEG C ~ 4 DEG C.
8. low temperature plasma production method according to claim 4, it is characterized in that, when the air pressure of input vortex tube is 0.5MPa, when flow is 18 ~ 25mL/min, working gas is cooled to 7 DEG C ~ 1 DEG C by vortex tube, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.0kV, frequency 60kHz, through plasma generator produce the temperature of low temperature plasma be 15 DEG C ~ 4 DEG C.
9. the low temperature plasma production method according to claim 1,2,5,7 or 8, it is characterized in that, when the air pressure of input vortex tube is 0.7MPa, when gas flow is 18 ~ 30mL/min, working gas is cooled to-10 DEG C ~-20 DEG C by gas cooler, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.5kV, frequency 70kHz, through plasma generator produce the temperature of low temperature plasma be 5 DEG C ~-4 DEG C.
10. low temperature plasma production method according to claim 6, it is characterized in that, when the air pressure of input vortex tube is 0.7MPa, when gas flow is 18 ~ 30mL/min, working gas is cooled to-10 DEG C ~-20 DEG C by gas cooler, adopt low-frequency sinusoidal AC plasma electrical source, when discharge voltage 3.5kV, frequency 70kHz, through plasma generator produce the temperature of low temperature plasma be 5 DEG C ~-4 DEG C.
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| CN201510938928.9A CN105430861A (en) | 2015-12-15 | 2015-12-15 | Temperature-controlled low-temperature plasma generation method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107320847A (en) * | 2017-06-21 | 2017-11-07 | 江苏康易达医疗科技有限公司 | A kind of Low-temperature Plasma Sterilization pen |
| CN109775800A (en) * | 2019-03-07 | 2019-05-21 | 大连理工大学 | A kind of preparation of plasma-activated water and store method |
| CN111556641A (en) * | 2020-06-05 | 2020-08-18 | 清华大学 | Exposed electrode type atmospheric pressure plasma generator system in low temperature range |
| CN111926545A (en) * | 2019-04-28 | 2020-11-13 | 博西华电器（江苏）有限公司 | Clothes dryer and control method thereof |
| CN112703034A (en) * | 2018-07-25 | 2021-04-23 | 离子生物技术有限公司 | Electro-medical device for blood coagulation and ulcer treatment and other skin lesion treatment in human and animal patients |
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| JP2007227068A (en) * | 2006-02-22 | 2007-09-06 | Noritsu Koki Co Ltd | Workpiece processing apparatus |
| CN102172105A (en) * | 2008-09-03 | 2011-08-31 | 冲野晃俊 | Plasma temperature control apparatus and plasma temperature control method |
| CN102625557A (en) * | 2012-03-30 | 2012-08-01 | 大连理工大学 | Generating device for atmospheric bare electrode cold plasma jet |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107320847A (en) * | 2017-06-21 | 2017-11-07 | 江苏康易达医疗科技有限公司 | A kind of Low-temperature Plasma Sterilization pen |
| CN112703034A (en) * | 2018-07-25 | 2021-04-23 | 离子生物技术有限公司 | Electro-medical device for blood coagulation and ulcer treatment and other skin lesion treatment in human and animal patients |
| CN112703034B (en) * | 2018-07-25 | 2024-04-30 | 医学等离子体有限公司 | Electro-medical device for treatment of blood clots and ulcers and other skin lesions in human and animal patients |
| CN109775800A (en) * | 2019-03-07 | 2019-05-21 | 大连理工大学 | A kind of preparation of plasma-activated water and store method |
| CN111926545A (en) * | 2019-04-28 | 2020-11-13 | 博西华电器（江苏）有限公司 | Clothes dryer and control method thereof |
| CN111556641A (en) * | 2020-06-05 | 2020-08-18 | 清华大学 | Exposed electrode type atmospheric pressure plasma generator system in low temperature range |
| CN111556641B (en) * | 2020-06-05 | 2021-04-16 | 清华大学 | Exposed electrode type atmospheric pressure plasma generator system in low temperature range |
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Application publication date: 20160323 |