CN105428493B - A kind of GaN base LED and preparation method thereof - Google Patents
A kind of GaN base LED and preparation method thereof Download PDFInfo
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- CN105428493B CN105428493B CN201610006255.8A CN201610006255A CN105428493B CN 105428493 B CN105428493 B CN 105428493B CN 201610006255 A CN201610006255 A CN 201610006255A CN 105428493 B CN105428493 B CN 105428493B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000007788 roughening Methods 0.000 claims abstract description 13
- 238000000605 extraction Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 101100117236 Drosophila melanogaster speck gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of GaN base LED, by plating layer of ZnO film on common LED light-emitting surfaces, because the refractive index of ZnO is 2.0 or so, between air and GaN refractive index, the light that active layer is sent out is made to be more easy to be emitted, the present invention realizes significantly improving for light extraction efficiency of LED in combination with the micropore pattern of surface roughening and manufacturing cycle Structural assignments.The invention also discloses the preparation methods of above-mentioned GaN base LED structure.
Description
Technical field
It is specifically a kind of in light emitting diode the present invention relates to semiconductor, Laser Micro-Machining and optical information technology field
(LED) layer of ZnO film is plated on light-emitting surface, and to its surface using plasma roughening and femtosecond laser manufacturing cycle knot
The micropore pattern of structure arrangement, to realize the raising of light extraction efficiency of LED.
Background technology
Light emitting diode (LED) is a kind of New Solid light source, has the advantages such as green, efficient, energy saving, it is considered to be under
The lighting source of a generation.Be widely applied in mobile phone, camera, display, indicator light etc. at present, and auto lamp,
LCD backlight and nightscape lighting etc. also begin to show up prominently.With the quickening and energy-saving and emission-reduction of globalization urbanization process
Be rooted in the hearts of the people, LED will show huge development space in following Lighting Industry.At present, LED in the market is mainly base
In the LED of GaN material, extensive concern and quickly development are worldwide obtained, but GaN base LED is also faced with
A series of problems, most important one problem are how to further improve its luminous efficiency.With semiconductor technology progress and knot
Structure optimizes, and the internal quantum efficiency of GaN base LED has reached more than 80%, and external quantum efficiency only has 20%-30% or so.Therefore,
Low-level external quantum efficiency is the major technology bottleneck of high power GaN base LED development.It is improved by improving external quantum efficiency
Output power becomes one of lighting LED key technology.It can be seen that without too big promotion on internal quantum efficiency
Space, and the main reason for external quantum efficiency is low, is that light extraction efficiency of LED is very low, it will be following raising to promote light extraction efficiency
The main path of LED external quantum efficiencys.
The reason of causing light extraction efficiency very low be：Refractive index (the n of GaNGaN=2.5) with air (nair=1) folding in
It is larger to penetrate rate difference, corresponding to critical total internal θ=23 °, when the photon that active area generates during outgoing from close Jie of light
Matter GaN is incident in optically thinner medium air so that the outgoing photon more than the angle total reflection phenomenon will occur in interface and
It cannot escape out, reflected photon is absorbed by material generation thermal conductivity and the luminous efficiency of LED component is caused further to reduce again.
Therefore how to take effective mode that this part light is made to escape, be improve GaN base LED output powers starting point and
The key point that LED solid-state lighting light sources are widely applied.
Invention content
In view of this, the purpose of the present invention is to provide a kind of method for improving GaN base light extraction efficiency of LED, go out in LED
Layer of ZnO film is plated in smooth surface, and is roughened in combination with surface and is realized with the micropore pattern of manufacturing cycle Structural assignments
Light extraction efficiency of LED significantly improves.It arranges the present invention also provides the roughening of above-mentioned light-emitting surface surface and periodic structure micro-
The production method of sectional hole patterns.
In order to achieve the above objectives, the present invention provides following technical solutions：
A kind of GaN base LED, the LED include the sapphire substrates stacked successively, buffer layer GaN, N-shaped GaN semiconductors
Layer, MQW active layer, p-type GaN semiconductor layers, the n-type electrode pad being electrically connected on buffer layer N-shaped GaN are electrically connected to
P-type electrode pad on p-type GaN semiconductor layers, the LED further include ZnO film structure, and the ZnO film passes through spin-coating method
It is plated on p-type GaN semiconductor layers.
Preferably, the ZnO film thickness is 10~15nm.
The preparation method of the GaN base LED, is as follows：
1) on the p-type light-emitting surface of the GaN base LED prepared spin coating layer of transparent ZnO film；
2) surface of plasma bombardment ZnO film being mixed to form using argon gas and hydrogen, in the work of high energy particle
Under, ZnO film surface forms the roughening structure of lint shape；
3) the GaN base LED chip after roughening is placed on the three-dimensional machinery mobile platform of fs-laser system, computer control
The movement of focusing objective len processed makes laser spot be scanned on GaN base LED chip light extraction face, changes the focusing energy control of femtosecond laser
System forms diameter at 1.5~2 μm on light-emitting surface, and depth is in the micropore of 40~45nm.
Preferably, the step 1) carries out spin coating using spin coating instrument, and rotation efficiency 8000r/s, rotational time is 50s.
Preferably, vacuum of the operating voltage of the step 2) plasma for chamber residing for 80-100 volts, plasma
Spend is 1 × 10-3~7 × 10-3Pa.
Preferably, the step 3) laser scanning carries out as follows：Using 20 x Microscope Objectives by wavelength be 800nm
Femtosecond laser focus on the light-emitting surface of GaN base LED chip, 5.8~20.2J/cm of incident laser energy2, pulsewidth 100~
120fs, repetition rate 1kHz.
Preferably, the volume ratio of the step 2) argon gas and hydrogen is 3:1.
The beneficial effects of the present invention are：Layer of ZnO film is plated on LED light-emitting surfaces the present invention provides a kind of
GaN base LED, because the refractive index of ZnO 2.0 or so, between air and GaN refractive index, makes the light that active layer is sent out more
Easily outgoing, and realize light extraction efficiency of LED in combination with the micropore pattern of surface roughening and manufacturing cycle Structural assignments
It significantly improves.
Description of the drawings
In order to make the purpose of the present invention, technical solution and advantageous effect clearer, the present invention provides drawings described below：
Fig. 1 shows the artworks of the spin coating ZnO film on the p-type light-emitting surface of the GaN base LED prepared；
Fig. 2 represents the electron microscope of the GaN base LED chip by surface roughening and micropore patterned structures；
Fig. 3 represents common LED and the optical output power of new construction LED and the relational graph of Injection Current；
Fig. 4 represents common LED and the electroluminescent light spectrogram of new construction LED.
Specific embodiment
The preferred embodiment of the present invention is described in detail below in conjunction with attached drawing.Specific item is not specified in embodiment
The experimental method of part, usually according to normal condition or according to the normal condition proposed by manufacturer.
Embodiment 1
1st, on the p-type light-emitting surface of GaN base LED (as shown in Figure 1a) prepared, using spin-coating method, spin coating one
The transparent ZnO film (as shown in Figure 1 b) of layer, the rotation efficiency of spin coating instrument are 8000r/s, and rotational time is 50s, the spin coating of ZnO
Thickness is 15nm；
2nd, on the GaN base LED of ZnO film is coated with, (argon gas is mixed using argon gas and hydrogen：Hydrogen=3:1) it is formed
Plasma directly bombards the surface of ZnO film, and in the effect of high energy particle, ZnO film surface can form lint shape
It is roughened structure (as illustrated in figure 1 c)；Use the design parameter of plasmon for：The operating voltage for generating plasma is 80-100
The vacuum degree of chamber residing for volt, plasma is 1 × 10-3~7 × 10-3Pa；
3rd, the GaN base LED chip after roughening is placed on the three-dimensional machinery mobile platform of fs-laser system, computer control
The movement of focusing objective len processed makes laser spot be scanned on GaN base LED chip light extraction face, design parameter：Speck is shown using 20
Mirror focuses on the femtosecond laser that wavelength is 800nm on the light-emitting surface of GaN base LED chip, incident laser energy 20.2J/cm2,
Pulsewidth 120fs, repetition rate 1kHz；
4th, it by changing the focusing energy of femtosecond laser, controls and diameter is formed on light-emitting surface at 1.5~2 μm, depth exists
The micropore (as shown in Figure 1 d) of 40~45nm.
Electron-microscope scanning is carried out to the light-emitting surface by surface roughening and the GaN base LED chip of micropore patterned structures, is obtained
Electron-microscope scanning figure as shown in Figure 2.
New construction LED prepared by embodiment 1 carries out optical output power with common LED and Injection Current compares, obtain as
Relational graph shown in Fig. 3 by Fig. 3 it is evident that the output power of new construction LED is significantly increased compared to common LED, carries
High-amplitude is more than 50%.
By new construction LED prepared by embodiment 1 and common LED carry out electroluminescent compare to obtain it is as shown in Figure 4 electroluminescent
Luminescent spectrum figure (under identical Injection Current, Injection Current size is 120mA), as can be seen from Fig., the middle cardiac wave of luminous spectrum
Length is not drifted about, meanwhile, the spectral intensity of new construction LED also has greatly improved.
Finally illustrate, preferred embodiment above is merely illustrative of the technical solution of the present invention and unrestricted, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (6)
1. a kind of GaN base LED, the LED include stack successively sapphire substrates, buffer layer GaN, N-shaped GaN semiconductor layers,
MQW active layer, p-type GaN semiconductor layers, the n-type electrode pad being electrically connected on buffer layer N-shaped GaN are electrically connected to p-type
P-type electrode pad on GaN semiconductor layers, which is characterized in that the LED further includes ZnO film structure, and the ZnO film leads to
Spin-coating method is crossed to be plated on p-type GaN semiconductor layers；The ZnO film thickness is 10 ~ 15nm,
The preparation method of the GaN base LED, is as follows：
1）The ZnO film of spin coating layer of transparent on the p-type light-emitting surface of the GaN base LED prepared；
2）The surface of plasma bombardment ZnO film being mixed to form using argon gas and hydrogen, under the action of high energy particle,
ZnO film surface forms the roughening structure of lint shape；
3）GaN base LED chip after roughening is placed on the three-dimensional machinery mobile platform of fs-laser system, computer control is poly-
The movement of focus objective lens makes laser spot be scanned on GaN base LED chip light extraction face, and the focusing energy hole for changing femtosecond laser exists
Diameter is formed on light-emitting surface at 1.5 ~ 2 μm, depth is in the micropore of 40 ~ 45nm.
2. the preparation method of GaN base LED described in claim 1, which is characterized in that be as follows：
1）The ZnO film of spin coating layer of transparent on the p-type light-emitting surface of the GaN base LED prepared；
2）The surface of plasma bombardment ZnO film being mixed to form using argon gas and hydrogen, under the action of high energy particle,
ZnO film surface forms the roughening structure of lint shape；
3）GaN base LED chip after roughening is placed on the three-dimensional machinery mobile platform of fs-laser system, computer control is poly-
The movement of focus objective lens makes laser spot be scanned on GaN base LED chip light extraction face, and the focusing energy hole for changing femtosecond laser exists
Diameter is formed on light-emitting surface at 1.5 ~ 2 μm, depth is in the micropore of 40 ~ 45nm.
3. the preparation method of GaN base LED according to claim 2, which is characterized in that the step 1）It is carried out using spin coating instrument
Spin coating, rotation efficiency 8000r/s, rotational time are 50s.
4. the preparation method of GaN base LED according to claim 2, which is characterized in that the step 2）The work of plasma
Voltage is that 80-100 is lied prostrate, the vacuum degree of chamber is 1 × 10 residing for plasma-3~7×10-3Pa.
5. the preparation method of GaN base LED according to claim 2, which is characterized in that step 3）The laser scanning is by as follows
Method carries out：The femtosecond laser that wavelength is 800 nm is focused on to the light-emitting surface of GaN base LED chip using 20 x Microscope Objectives
On, 5.8~20.2 J/cm of incident laser energy2, pulsewidth 100 ~ 120 f s, 1 kHz of repetition rate.
6. the preparation method of GaN base LED according to claim 2, which is characterized in that the step 2）The body of argon gas and hydrogen
Product ratio is 3:1.
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| CN201610006255.8A CN105428493B (en) | 2016-01-06 | 2016-01-06 | A kind of GaN base LED and preparation method thereof |
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| CN105428493B true CN105428493B (en) | 2018-06-26 |
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| KR20120092325A (en) * | 2011-02-11 | 2012-08-21 | 서울옵토디바이스주식회사 | Light emitting diode having photonic crystal structure and method of fabricating the same |
| TWI422068B (en) * | 2011-02-18 | 2014-01-01 | Univ Nat Cheng Kung | Roughening method and method for manufacturing light emitting diode having roughened surface |
| CN103682014A (en) * | 2012-09-03 | 2014-03-26 | 广东量晶光电科技有限公司 | LED with surface microstructure and manufacturing method thereof |
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Inventor after: Cang Zhigang Inventor after: Tang Xiaosheng Inventor after: Wei Jing Inventor after: Ye Ying Inventor before: Tang Xiaosheng Inventor before: Cang Zhigang Inventor before: Wei Jing Inventor before: Ye Ying |
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