CN105428434A - Polysilicon surface reverse pyramid structure and preparation method thereof - Google Patents
Polysilicon surface reverse pyramid structure and preparation method thereof Download PDFInfo
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- CN105428434A CN105428434A CN201610005713.6A CN201610005713A CN105428434A CN 105428434 A CN105428434 A CN 105428434A CN 201610005713 A CN201610005713 A CN 201610005713A CN 105428434 A CN105428434 A CN 105428434A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 113
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 103
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 226
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 202
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 93
- 239000010703 silicon Substances 0.000 claims abstract description 93
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 59
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 36
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 claims abstract description 36
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 99
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 84
- 238000006243 chemical reaction Methods 0.000 claims description 51
- 239000011259 mixed solution Substances 0.000 claims description 43
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 42
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 34
- 230000035484 reaction time Effects 0.000 claims description 26
- 230000002000 scavenging effect Effects 0.000 claims description 22
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 21
- 229910021645 metal ion Inorganic materials 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 239000002086 nanomaterial Substances 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 239000002253 acid Substances 0.000 abstract description 5
- 238000012958 reprocessing Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000002210 silicon-based material Substances 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000010307 cell transformation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 241001466460 Alveolata Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Weting (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a polysilicon surface reverse pyramid structure and a preparation method thereof. Back silicon is manufactured by use of different methods, then, a sample is placed in a mixed liquid of hydrogen peroxide and ethanolamine, then washed black silicon is placed in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride for reprocessing, and thus the polysilicon surface reverse pyramid structure is formed. According to the invention, by use of a wet chemical method different from soda acid corrosion, the method can reduce the influence of anisotropy to the maximum degree, and the back silicon with different nano structures is enabled to have a nanometer textured structure with a regular reverse pyramid structure through oxidation corrosion. Compared to a conventional polysilicon textured structure, the polysilicon reverse pyramid light tripping structure is higher in utilization rate of light and lower in reflectivity. Due to the feature of its reverse pyramid structure, compared to high surface recombination of the small yet dense structure of conventional black silicon, the surface recombination of the polysilicon surface reverse pyramid structure is obviously reduced, and the efficiency of a solar battery is higher.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly a kind of polysilicon surface inverted pyramid structure and preparation method thereof.
Background technology
Conventional polysilicon suede structure is micron order vermicular texture, and it is the anisotropic properties utilizing silicon that the matte of polysilicon makes, and uses acid corrosion to form alveolate texture on surface, has certain light trapping effect, can reduce the reflectivity of silicon chip surface.
A kind of new nanometer light trapping structure is now also had generally to be referred to as " black silicon ", its various circular cones by the method nanoscale of suitable etching or corrosion, the forest structure of cylinder or the pore space structure of dense distribution, there is good light trapping effect, significantly can reduce the reflectivity of silicon chip surface, be considered to the structure that effectively can improve solar cell transformation efficiency.There are many laboratories can prepare black silicon by diverse ways at present.As femtosecond laser pulse method, plasma etching method and metal ion auxiliary etch method etc.Distinct methods can prepare different black silicon structures and reflectivity can do very low.But this original black silicon nanometer light trapping structure has structure usually compared with little, close, dark and defect is many, even has impurity contamination on surface, although optically with the obvious advantage, does not mate with current crystal silicon solar battery manufacturing process.If black silicon structure is not optimized, by the decrease in efficiency causing serious surface recombination to make solar cell on the contrary.
Polysilicon surface inverted pyramid light trapping structure is use a kind of wet chemical method being different from acid and alkali corrosion to make, reduce anisotropic impact to greatest extent, the black silicon of different nanostructure can be become the nanometer suede structure of the well-regulated inverted pyramid structure of tool by oxide etch.Compared with prior art, its beneficial effect is that the structure of the black Si reconstructed surface of polycrystalline is inverted pyramid structure and structure is comparatively large, hole is darker, better ensure that the characteristic of black silicon antiradar reflectivity makes again silicon chip be easy to passivation, thus improve the electrical property of polycrystalline solar cell, effectively improve the transformation efficiency of battery.And less demanding to equipment, can be used widely in industrialization production process.
Therefore, how to increase the absorption of silicon chip surface light, simultaneously do not increase its surface recombination, solar cell transformation efficiency can be improved, and method convenient feasible can industrialization, significant.
Summary of the invention
Goal of the invention: the invention provides a kind of polysilicon surface inverted pyramid structure and preparation method thereof, to solve the problems of the prior art.
Technical scheme: to achieve these goals, the present invention by the following technical solutions:
A preparation method for polysilicon surface inverted pyramid structure, is characterized in that, comprises the following steps:
Step one, polysilicon damaged layer on surface of silicon slice are removed: the polysilicon silicon chip after cleaning is placed in hydrofluoric acid and HNO
3mixed solution in, carry out surperficial mechanical damage layer removal;
Step 2, the black silicon structure of polysilicon silicon chip surface make: adopt metal ion auxiliary etch method or use femto-second laser pulse method or reactive ion etching method to carry out black silicon making;
The making of step 3, polysilicon silicon chip surface inverted pyramid texture: first the mixed liquor that the black silicon of said method is placed in containing hydrogen peroxide and monoethanolamine is embathed, the mixed liquor then washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride embathes again; Or the mixed liquor only black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride embathes; Inverted pyramid structure can be obtained at polysilicon silicon chip surface;
The cleaning of step 4, polysilicon silicon chip: polysilicon silicon chip surface with inverted pyramid structure cleans in HF solution, then put into pure water cleaning, finally dry.
Further, hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 12% ~ 15%, HNO
3volume fraction 60% ~ 65%, pure water volume fraction 20% ~ 28%, reaction temperature is 7 ~ 9 DEG C, and the reaction time is 1-2min.
Further, metal ion auxiliary etch method in described step 2: the mixed solution that the polysilicon silicon chip after removal damage layer is placed in hydrofluoric acid and silver nitrate is carried out Argent grain deposition, the mixed solution polysilicon silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion, obtains nano black silicon;
Further, in described step 2 metal ion auxiliary etch method, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 92%-99%, hydrofluoric acid 0.1% ~ 3% and silver nitrate 0.1% ~ 5%, reaction temperature is 8 DEG C-30 DEG C, and the reaction time is 10 ~ 100s; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 85%-98%, hydrogen peroxide 1%-5% and hydrofluoric acid 1%-10%, and reaction temperature is 8 DEG C-60 DEG C, and the reaction time is 120s-500s.
Further, femto-second laser pulse method in described step 2: carry out black silicon making with laser pulse method, polysilicon silicon chip is formed mask layer, mask layer is formed predetermined pattern via-hole array, graphic mask polysilicon silicon chip is etched, polysilicon silicon chip is formed predetermined pattern groove array, remove mask layer, polysilicon silicon chip is placed in sulphur hexafluoride or hydrogen sulfide gas, use the laser of 400-1000 wavelength, its pulse is 500-2100 irradiation silicon chip, obtains nano black silicon;
Further, reactive ion etching method in described step 2: polysilicon silicon chip is placed in vacuum chamber, with low energy ion beam uniform irradiation polysilicon silicon chip, is then placed in reactive ion etching vacuum chamber by postradiation polysilicon silicon chip, obtained black silicon sample;
Further, in described step 3, the mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 68%-97%, monoethanolamine 0%-2%, ammoniacal liquor 1% ~ 10% and hydrogen peroxide 2%-20%, reaction temperature is 8 DEG C-30 DEG C, and the reaction time is 60s-500s; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 73%-94.9%, hydrogen peroxide 4%-7%, hydrofluoric acid 0.1%-3%, metaphosphoric acid 0%-2% and ammonium fluoride 1%-15%, reaction temperature is 50 DEG C-80 DEG C, and the reaction time is 50s-600s.
Further, the polysilicon silicon chip that surface step 3 obtained has an inverted pyramid structure is inserted in the mixed liquor of ammoniacal liquor and hydrogen peroxide again and is cleaned, then carries out step 4; The mixed liquor of described ammoniacal liquor and hydrogen peroxide, its percent concentration proportioning is pure water 70% ~ 97%, hydrogen peroxide 2% ~ 20% and ammoniacal liquor 1% ~ 10%, and reaction temperature is 8 DEG C-30 DEG C, and the reaction time is 30 ~ 180s.
Further, in described step 4, the volume fraction of HF is 1% ~ 5%, and the volume fraction of pure water is 95% ~ 99%, and scavenging period scope is 40 ~ 120s, and pure water scavenging period scope is 40 ~ 120s.
A kind of polysilicon surface inverted pyramid structure, polysilicon silicon chip surface has several inverted pyramid structures, each inverted pyramid structure is shown as square aperture on the surface of polysilicon silicon chip, four limits along square aperture extend respectively to polysilicon chip inner inclination, and four tapered planar are connected to form the taper of inverted pyramid structure; The length of side of the square aperture of inverted pyramid structure is 100-1000 nanometer, vertical depth is 50-800 nanometer, and the angle between its tapered planar normal tilted and polysilicon silicon chip surface normal is 20-65 degree; At polysilicon silicon chip on the surface, inverted pyramid structure is random distribution, and has superposition each other.
Beneficial effect: present invention employs a kind of wet chemical method being different from acid and alkali corrosion, the method can reduce anisotropic impact to greatest extent, by the black silicon of different nanostructure by oxide etch, the polysilicon inverted pyramid structure of rule can be made it have, the present invention can carry out reprocessing to the black silicon that different nanostructure and any method make, form polysilicon inverted pyramid structure, polysilicon inverted pyramid structure is relative to conventional multi-crystalline silicon matte, there is more excellent sunken light effect, higher to the utilance of light, reflectivity is lower, relative to the high surface recombination of the small and dense structure of the black silicon of tradition, its surface recombination obviously reduces, the aggregated(particle) structure that original polycrystalline structure basis is formed is larger, namely the size of inverted pyramid structure is larger, the vertical depth of inverted pyramid structure is darker, the present invention better ensure that the characteristic of black silicon antiradar reflectivity makes again silicon chip be easy to passivation, thus improve the electrical property of polycrystalline solar cell, effectively improve the transformation efficiency of solar cell, make the efficiency of solar cell higher, nanostructure is close to optical wavelength simultaneously, falls into light effect significantly, and in true environment, specific yield promotes significantly, the inventive method is simple, easy to operate, with low cost, less demanding to equipment, can be used widely in industrialization production process.
Accompanying drawing explanation
Fig. 1 is polycrystalline surface inverted pyramid structure SEM image in embodiment 1;
Fig. 2 is that the present invention contrasts the non-reprocessing SEM image of black silicon in 1;
Fig. 3 is that the present invention contrasts conventional matte SEM image in 2.
Embodiment
Below in conjunction with embodiment, the present invention is further described.
A kind of polysilicon surface inverted pyramid structure of the present invention and preparation method thereof, relate to and make the making of inverted pyramid solar cell on the polysilicon, make to adopt a kind of wet chemical method being different from acid and alkali corrosion, reduce anisotropic impact to greatest extent, the black silicon of different nanostructure can be become the nanometer suede structure of the well-regulated inverted pyramid structure of tool by oxide etch.
Embodiment 1
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making by metal ion auxiliary etch method method, mixed solution silicon chip being placed in hydrofluoric acid and silver nitrate carries out Argent grain deposition 10s, reaction temperature is 8 DEG C, the mixed solution polysilicon silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion 500s, reaction temperature is 60 DEG C, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in ammoniacal liquor, hydrogen peroxide and monoethanolamine embathe 60s, and reaction temperature is 8 DEG C; The mixed liquor washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride again embathes black silicon 600s again, and reaction temperature is 80 DEG C; Finally clean black silicon face at the mixed liquor of ammoniacal liquor and hydrogen peroxide, reaction temperature is 8 DEG C, and the reaction time is 30s;
Step 4, to clean in HF solution, then adopt pure water to clean, finally use drier to dry.After reconstruct, black silicon face SEM image as shown in Figure 1.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 12%, HNO
3volume fraction 60%, pure water volume fraction 28%, reaction temperature is 7 DEG C, and the reaction time is 2min.
In described step 2, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 92%, hydrofluoric acid 3% and silver nitrate 5%; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 85%, hydrogen peroxide 5% and hydrofluoric acid 10%.
In described step 3, the mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 68%, monoethanolamine 2%, ammoniacal liquor 10% and hydrogen peroxide 20%; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 73%, hydrogen peroxide 7%, hydrofluoric acid 3%, metaphosphoric acid 2% and ammonium fluoride 15%; Hydrogen peroxide and ammonia water mixture, its percent concentration proportioning is pure water 70%, hydrogen peroxide 20% and ammoniacal liquor 10%.
In described step 4, the volume fraction of HF is 4%, and the volume fraction of pure water is 96%, and scavenging period scope is 50s, and pure water scavenging period scope is 90s.
Embodiment 2
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making by metal ion auxiliary etch method method, mixed solution polysilicon silicon chip being placed in hydrofluoric acid and silver nitrate carries out Argent grain deposition 50s, reaction temperature is 20 DEG C, the mixed solution silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion 300s, reaction temperature is 40 DEG C, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in ammoniacal liquor, hydrogen peroxide and monoethanolamine embathe 300s, and reaction temperature is 20 DEG C; The mixed liquor washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride again embathes black silicon 300s again, and reaction temperature is 50 DEG C; Finally clean black silicon face at the mixed liquor of ammoniacal liquor and hydrogen peroxide, reaction temperature is 20 DEG C, and the reaction time is 100s;
Step 4, to clean in HF solution, then adopt pure water to clean, finally use drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is the volume fraction 60% of 13%, HNO3, pure water volume fraction 28%, and reaction temperature is 8 DEG C, and the reaction time is 1.5min.
In described step 2, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 96.9%, hydrofluoric acid 0.1% and silver nitrate 3%; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 90%, hydrogen peroxide 3% and hydrofluoric acid 7%.
In described step 3, the mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 75%, monoethanolamine 1%, ammoniacal liquor 7% and hydrogen peroxide 17%; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 80%, hydrogen peroxide 5%, hydrofluoric acid 1%, metaphosphoric acid 1% and ammonium fluoride 13%; Hydrogen peroxide and ammonia water mixture, its percent concentration proportioning is pure water 80%, hydrogen peroxide 15% and ammoniacal liquor 5%.
In described step 4, the volume fraction of HF is 1%, and the volume fraction of pure water is 99%, and scavenging period scope is 70s, and pure water scavenging period scope is 70s
Embodiment 3
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making by metal ion auxiliary etch method method, mixed solution polysilicon silicon chip being placed in hydrofluoric acid and silver nitrate carries out Argent grain deposition 50s, reaction temperature is 20 DEG C, the mixed solution silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion 300s, reaction temperature is 40 DEG C, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in ammoniacal liquor, hydrogen peroxide and monoethanolamine embathe 300s, and reaction temperature is 20 DEG C; The mixed liquor washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride again embathes black silicon 300s again, and reaction temperature is 50 DEG C; Finally clean black silicon face at the mixed liquor of ammoniacal liquor and hydrogen peroxide, reaction temperature is 20 DEG C, and the reaction time is 100s;
Step 4, clean in HF solution, pure water cleans, and uses drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 14%, HNO
3volume fraction 64%, pure water volume fraction 22%, reaction temperature is 9 DEG C, and the reaction time is 1min.
In described step 2, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 97.9%, hydrofluoric acid 2% and silver nitrate 0.1%; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 95%, hydrogen peroxide 2% and hydrofluoric acid 3%.
In described step 3, the mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 80%, monoethanolamine 1%, ammoniacal liquor 5% and hydrogen peroxide 14%; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 85%, hydrogen peroxide 4%, hydrofluoric acid 0.5%, metaphosphoric acid 0.5% and ammonium fluoride 10%; Hydrogen peroxide and ammonia water mixture, its percent concentration proportioning is pure water 90%, hydrogen peroxide 8% and ammoniacal liquor 2%.
In described step 4, the volume fraction of HF is 2%, and the volume fraction of pure water is 98%, and scavenging period scope is 90s, and pure water scavenging period scope is 50s.
Embodiment 4
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode 3min, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making by metal ion auxiliary etch method method, mixed solution polysilicon silicon chip being placed in hydrofluoric acid and silver nitrate carries out Argent grain deposition 100s, reaction temperature is 30 DEG C, the mixed solution silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion 120s, reaction temperature is 8 DEG C, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in ammoniacal liquor, hydrogen peroxide and monoethanolamine embathe 500s, and reaction temperature is 30 DEG C; The mixed liquor washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride again embathes black silicon 50s again, and reaction temperature is 50 DEG C; Finally clean black silicon face at the mixed liquor of ammoniacal liquor and hydrogen peroxide, reaction temperature is 30 DEG C, and the reaction time is 180s;
Step 4, clean in HF solution, pure water cleans, and uses drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 15%, HNO
3volume fraction 65%, pure water volume fraction 20%, reaction temperature is 7 DEG C, and the reaction time is 1min.
In described step 2, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 99%, hydrofluoric acid 0.5% and silver nitrate 0.5%; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 98%, hydrogen peroxide 1% and hydrofluoric acid 1%.
In described step 3, the mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 97%, monoethanolamine 0%, ammoniacal liquor 3% and hydrogen peroxide 7%; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 90%, hydrogen peroxide 4%, hydrofluoric acid 0.1%, metaphosphoric acid 0.5% and ammonium fluoride 5.4%; Hydrogen peroxide and ammonia water mixture, its percent concentration proportioning is pure water 97%, hydrogen peroxide 2% and ammoniacal liquor 1%.
In described step 4, the volume fraction of HF is 4%, and the volume fraction of pure water is 96%, and scavenging period scope is 60s, and pure water scavenging period scope is 110s.
Embodiment 5
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode 3min, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making by metal ion auxiliary etch method method, mixed solution polysilicon silicon chip being placed in hydrofluoric acid and silver nitrate carries out Argent grain deposition 100s, reaction temperature is 30 DEG C, the mixed solution silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion 120s, reaction temperature is 8 DEG C, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in ammoniacal liquor, hydrogen peroxide and monoethanolamine embathe 500s, and reaction temperature is 30 DEG C; The mixed liquor washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride again embathes black silicon 50s again, and reaction temperature is 50 DEG C; Finally clean black silicon face at the mixed liquor of ammoniacal liquor and hydrogen peroxide, reaction temperature is 30 DEG C, and the reaction time is 180s;
Step 4, to clean in HF solution, then adopt pure water to clean, use drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 15%, HNO
3volume fraction 65%, pure water volume fraction 20%, reaction temperature is 7 DEG C, and the reaction time is 1min.
In described step 2, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 99%, hydrofluoric acid 0.5% and silver nitrate 0.5%; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 98%, hydrogen peroxide 1% and hydrofluoric acid 1%.
In described step 3, the mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 97%, monoethanolamine 0%, ammoniacal liquor 1% and hydrogen peroxide 2%; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 94.9%, hydrogen peroxide 4%, hydrofluoric acid 0.1%, metaphosphoric acid 0% and ammonium fluoride 1%; Hydrogen peroxide and ammonia water mixture, its percent concentration proportioning is pure water 97%, hydrogen peroxide 2% and ammoniacal liquor 1%.
In described step 4, the volume fraction of HF is 2%, and the volume fraction of pure water is 98%, and scavenging period scope is 80s, and pure water scavenging period scope is 100s.
Embodiment 6
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making with laser pulse method, polysilicon silicon chip is formed mask layer, mask layer is formed predetermined pattern via-hole array, graphic mask silicon chip is etched, silicon chip is formed predetermined pattern groove array, remove mask layer, polysilicon silicon chip is placed in hydrogen sulfide gas, use the laser of 400 wavelength, its pulse is 2100 irradiation silicon chips, obtains nano black silicon sample;
Step 3, then the mixed liquor of black silicon sample hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride is embathed black silicon 600s again, reaction temperature is 80 DEG C;
Step 4, to clean in HF solution, then adopt pure water to clean, use drier to dry.After reconstruct, black silicon face SEM image as shown in Figure 1.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 12%, HNO
3volume fraction 60%, pure water volume fraction 28%, reaction temperature is 7 DEG C, and the reaction time is 2min.
In described step 3, the mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 73%, hydrogen peroxide 7%, hydrofluoric acid 3%, metaphosphoric acid 2% and ammonium fluoride 15%.
In described step 4, the volume fraction of HF is 3%, and the volume fraction of pure water is 97%, and scavenging period scope is 100s, and pure water scavenging period scope is 80s.
Embodiment 7
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode 3min, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making with laser pulse method, polysilicon silicon chip is formed mask layer, mask layer is formed predetermined pattern via-hole array, graphic mask silicon chip is etched, silicon chip is formed predetermined pattern groove array, remove mask layer, polysilicon silicon chip is placed in sulfur hexafluoride gas, use the laser of 1000 wavelength, its pulse is 500 irradiation silicon chips, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride embathe black silicon 50s again, and reaction temperature is 50 DEG C;
Step 4, in HF solution, clean 1min, then adopt pure water to clean 1min, finally use drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 15%, HNO
3volume fraction 65%, pure water volume fraction 20%, reaction temperature is 7 DEG C, and the reaction time is 1min.
In described step 3, the mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 90%, hydrogen peroxide 4%, hydrofluoric acid 0.1%, metaphosphoric acid 0.5% and ammonium fluoride 5.4%.
In described step 4, the volume fraction of HF is 3%, and the volume fraction of pure water is 97%, and scavenging period scope is 100s, and pure water scavenging period scope is 80s.
Embodiment 8
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making with laser pulse method, polysilicon silicon chip is formed mask layer, mask layer is formed predetermined pattern via-hole array, graphic mask silicon chip is etched, silicon chip is formed predetermined pattern groove array, remove mask layer, polysilicon silicon chip is placed in sulfur hexafluoride gas, use the laser of 800 wavelength, its pulse is 1500 irradiation silicon chips, obtains nano black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride embathe black silicon 300s again, and reaction temperature is 50 DEG C;
Step 4, to clean in HF solution, then adopt pure water to clean, finally use drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 14%, HNO
3volume fraction 64%, pure water volume fraction 22%, reaction temperature is 9 DEG C, and the reaction time is 1min.
In described step 3, the mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 85%, hydrogen peroxide 4%, hydrofluoric acid 0.5%, metaphosphoric acid 0.5% and ammonium fluoride 10%.
In described step 4, the volume fraction of HF is 1%, and the volume fraction of pure water is 99%, and scavenging period scope is 120s, and pure water scavenging period scope is 40s.
Embodiment 9
A manufacture method for polycrystalline surface inverted pyramid structure texture, comprises the following steps:
Step one, select P type polycrystalline silicon material, specification is 156cm*156cm, and thickness is 200um, and polysilicon silicon chip is placed in hydrofluoric acid and HNO
3mixed solution in corrode 3min, carry out surperficial mechanical damage layer removal;
Step 2, carry out black silicon making by reactive ion etching method, polysilicon silicon chip is placed in vacuum chamber, with low energy ion beam uniform irradiation polysilicon silicon chip, then postradiation polysilicon silicon chip is placed in reactive ion etching vacuum chamber, obtained black silicon sample;
Step 3, the mixed liquor then black silicon sample being placed in ammoniacal liquor, hydrogen peroxide and monoethanolamine embathe 500s, and reaction temperature is 30 DEG C; The mixed liquor washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride again embathes black silicon 50s again, and reaction temperature is 50 DEG C;
Step 4, to clean in HF solution, then adopt pure water to clean, finally use drier to dry.
Hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 15%, HNO
3volume fraction 65%, pure water volume fraction 20%, reaction temperature is 7 DEG C, and the reaction time is 1min.
In described step 3, the mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 94.9%, hydrogen peroxide 4%, hydrofluoric acid 0.1%, metaphosphoric acid 0% and ammonium fluoride 1%.
In described step 4, the volume fraction of HF is 5%, and the volume fraction of pure water is 95%, and scavenging period scope is 40s, and pure water scavenging period scope is 120s.
About the making of black silicon in step 2 of the present invention, other existing manufacture method can also be adopted.
A kind of polysilicon surface inverted pyramid structure, polysilicon silicon chip surface has several inverted pyramid structures, each inverted pyramid structure is shown as square aperture on the surface of polysilicon silicon chip, four limits along square aperture extend respectively to polysilicon chip inner inclination, and four tapered planar are connected to form the taper of inverted pyramid structure; The length of side of the square aperture of inverted pyramid structure is 100-1000 nanometer, vertical depth is 50-800 nanometer, and the angle between its tapered planar normal tilted and polysilicon silicon chip surface normal is 20-65 degree; At polysilicon silicon chip on the surface, inverted pyramid structure is random distribution, and has superposition each other.
Comparative example 1
Comparative example 1 is the nano black silicon structure not carrying out reprocessing, and as shown in Figure 2, directly use this black silicon to carry out battery making, its complex centre can be very many, seriously reduce battery efficiency for SEM image.
Comparative example 2
Conventional polysilicon surface texture manufacture method process is as follows: use hydrofluoric acid, nitric acid and pure water mixed liquor to carry out suede structure making to original silicon chip, with certain density alkali, silicon chip surface is cleaned again, finally again after hydrofluoric acid pickling and washing.
In test comparison example 2 conventional black silicon face reflectivity be 24%, SEM image as shown in Figure 3.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a preparation method for polysilicon surface inverted pyramid structure, is characterized in that, comprises the following steps:
Step one, polysilicon damaged layer on surface of silicon slice are removed: the polysilicon silicon chip after cleaning is placed in hydrofluoric acid and HNO
3mixed solution in, carry out surperficial mechanical damage layer removal;
Step 2, the black silicon structure of polysilicon silicon chip surface make: adopt metal ion auxiliary etch method or use femto-second laser pulse method or reactive ion etching method to carry out black silicon making;
The making of step 3, polysilicon silicon chip surface inverted pyramid texture: first the mixed liquor that the black silicon of said method is placed in containing hydrogen peroxide and monoethanolamine is embathed, the mixed liquor then washed black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride embathes again; Or the mixed liquor only black silicon being placed in hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride embathes; Inverted pyramid structure can be obtained at polysilicon silicon chip surface;
The cleaning of step 4, polysilicon silicon chip: polysilicon silicon chip surface with inverted pyramid structure cleans in HF solution, then put into pure water cleaning, finally dry.
2. the preparation method of polysilicon surface inverted pyramid structure according to claim 1, is characterized in that: hydrofluoric acid and HNO in described step one
3mixed solution in, the volume fraction of hydrofluoric acid is 12% ~ 15%, HNO
3volume fraction 60% ~ 65%, pure water volume fraction 20% ~ 28%, reaction temperature is 7 ~ 9 DEG C, and the reaction time is 1-2min.
3. the preparation method of polysilicon surface inverted pyramid structure according to claim 1, it is characterized in that: metal ion auxiliary etch method in described step 2: the mixed solution that the polysilicon silicon chip after removal damage layer is placed in hydrofluoric acid and silver nitrate is carried out Argent grain deposition, the mixed solution polysilicon silicon chip deposited being placed in hydrofluoric acid and hydrogen peroxide again carries out chemical corrosion, obtains nano black silicon.
4. the preparation method of polysilicon surface inverted pyramid structure according to claim 3, it is characterized in that: in described step 2 metal ion auxiliary etch method, in the mixed solution of hydrofluoric acid and silver nitrate, percent concentration proportioning is, pure water 92%-99%, hydrofluoric acid 0.1% ~ 3% and silver nitrate 0.1% ~ 5%, reaction temperature is 8 DEG C-30 DEG C, and the reaction time is 10 ~ 100s; In the mixed liquor of hydrofluoric acid and hydrogen peroxide, percent concentration proportioning is, pure water 85%-98%, hydrogen peroxide 1%-5% and hydrofluoric acid 1%-10%, and reaction temperature is 8 DEG C-60 DEG C, and the reaction time is 120s-500s.
5. the preparation method of polysilicon surface inverted pyramid structure according to claim 1, it is characterized in that: femto-second laser pulse method in described step 2: carry out black silicon making with laser pulse method, polysilicon silicon chip is formed mask layer, mask layer is formed predetermined pattern via-hole array, graphic mask polysilicon silicon chip is etched, polysilicon silicon chip is formed predetermined pattern groove array, remove mask layer, polysilicon silicon chip is placed in sulphur hexafluoride or hydrogen sulfide gas, use the laser of 400-1000 wavelength, its pulse is 500-2100 irradiation silicon chip, obtain nano black silicon.
6. the preparation method of polysilicon surface inverted pyramid structure according to claim 1, it is characterized in that: reactive ion etching method in described step 2: polysilicon silicon chip is placed in vacuum chamber, with low energy ion beam uniform irradiation polysilicon silicon chip, then postradiation polysilicon silicon chip is placed in reactive ion etching vacuum chamber, obtained black silicon sample.
7. the preparation method of polysilicon surface inverted pyramid structure according to claim 1, it is characterized in that: in described step 3, mixed liquor containing hydrogen peroxide and monoethanolamine, its percent concentration proportioning is pure water 68%-97%, monoethanolamine 0%-2%, ammoniacal liquor 1% ~ 10% and hydrogen peroxide 2%-20%, reaction temperature is 8 DEG C-30 DEG C, and the reaction time is 60s-500s; The mixed liquor of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, its percent concentration proportioning is pure water 73%-94.9%, hydrogen peroxide 4%-7%, hydrofluoric acid 0.1%-3%, metaphosphoric acid 0%-2% and ammonium fluoride 1%-15%, reaction temperature is 50 DEG C-80 DEG C, and the reaction time is 50s-600s.
8. the preparation method of polysilicon surface inverted pyramid structure according to claim 1, it is characterized in that: the polysilicon silicon chip that surface step 3 obtained has an inverted pyramid structure is inserted in the mixed liquor of ammoniacal liquor and hydrogen peroxide again and cleaned, carry out step 4 again, the mixed liquor of described ammoniacal liquor and hydrogen peroxide, its percent concentration proportioning is pure water 70% ~ 97%, hydrogen peroxide 2% ~ 20% and ammoniacal liquor 1% ~ 10%, reaction temperature is 8 DEG C-30 DEG C, and the reaction time is 30 ~ 180s.
9. the preparation method of polysilicon surface inverted pyramid structure according to claim 8, it is characterized in that: in described step 4, the volume fraction of HF is 1% ~ 5%, the volume fraction of pure water is 95% ~ 99%, and scavenging period scope is 40 ~ 120s, and pure water scavenging period scope is 40 ~ 120s.
10. according to the arbitrary described polysilicon surface inverted pyramid structure of claim 1-9, it is characterized in that: polysilicon silicon chip surface has several inverted pyramid structures, each inverted pyramid structure is shown as square aperture on the surface of polysilicon silicon chip, four limits along square aperture extend respectively to polysilicon chip inner inclination, and four tapered planar are connected to form the taper of inverted pyramid structure; The length of side of the square aperture of inverted pyramid structure is 100-1000 nanometer, vertical depth is 50-800 nanometer, and the angle between its tapered planar normal tilted and polysilicon silicon chip surface normal is 20-65 degree; At polysilicon silicon chip on the surface, inverted pyramid structure is random distribution, and has superposition each other.
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