CN105428292B - A kind of alignment methods of grating mask and silicon chip { 111 } crystal face - Google Patents
A kind of alignment methods of grating mask and silicon chip { 111 } crystal face Download PDFInfo
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Abstract
The present invention provides the alignment methods of a kind of grating mask and silicon chip { 111 } crystal face, include the following steps：A multiple registration mark figures with diffraction properties) are made on silicon chip, each registration mark figure has two long sides parallel with the positioning side of the silicon chip；B) by step A) obtained silicon chip carries out wet etching, and so that the long side of the registration mark figure is ended along { 111 } crystal face of silicon chip, obtains the silicon chip with multiple first registration mark figures；C) datum line of positioning characterization grating mask obtains the diffraction spot of the long side of the multiple first registration mark figure using the long side of the multiple first registration mark figure of laser irradiation, and the datum line is overlapped with the diffraction spot.The alignment methods only need to make a registration mark figure, compare without micro- sem observation, can zero error position { 111 } crystal face, and characterized using its diffraction characteristic.This method is directed at overall error≤± 0.016 °.
Description
Technical field
The micrometer-nanometer processing technology field made the present invention relates to grating mask more particularly to a kind of grating mask and silicon chip
{ 111 } alignment methods of crystal face.
Background technology
High Performance X-ray transmission grating has in the key areas such as inertial confinement fusion (ICF) and astronomical observation
Rigid demand has the characteristics that high linear density and high-diffraction efficiency, it is desirable that grating groove profile keeps high-aspect-ratio and smooth
Diffraction surfaces.Anisotropic wet etch is important technology prepared by silicon substrate transmission grating, and wherein grating mask and silicon chip { 111 } is brilliant
The alignment precision in face determines the rate of lateral etching and the roughness of side wall.Alignment precision is higher, and side wall is more smooth, laterally carves
Erosion rate is smaller, and for the silicon grating of high-aspect-ratio, process tolerance is also higher.
Currently, the alignment methods generally use sector or circle marker of grating mask and silicon chip { 111 } crystal face etch
{ 111 } crystal face, then be aligned with characterizing method with grating mask with corresponding positioning.
The spaces MIT nanotechnology laboratory is existed using fan maker beacon wet etching method combination electron microscope<110>Silicon
On piece positions vertical { 111 } crystal face of rectangular strip of lateral etching width minimum, then by Position-Sensitive Detector, makes interference fringe
It is aligned therewith, complete mask manufacture.The alignment methods are only applicable to complicated scanning light beam interference system, and due to close to vertical
Directly many rectangular strip lateral etching similar widths of { 111 } crystal face are difficult to differentiate, and the position error of vertical { 111 } crystal face is made to exist
0.1 ° or so, account for the 90% of overall error.Another alignment methods are oriented using fan maker beacon wet etching method<110>Silicon
Vertical { 111 } crystal face of piece, and reference grating in parallel is produced on silicon chip, make reference grating and interference in the optical path
Striped is aligned.This method has obtained higher alignment precision, is not directed to particular system, more pervasive.But still use microscope
The fan-shaped item of lateral etching width minimum is found to position { 111 } crystal face, is positioned manually error accounts for overall error 75%；And it uses
Twi-lithography completes the making of reference grating, and time-consuming, and process is cumbersome, and the area that registration mark occupies monocrystalline silicon is big, and technique has
It is to be optimized.
Go out the method that hexagon positions { 111 } crystal face using circle marker wet etching and is also widely used for large period
During grating mask makes, but it is limited to the size of circle marker, this method error is larger at 0.2 ° or so, and it is close not to be suitable for high line
Spend the making of transmission grating.
It is the thinking using three-step-march, i.e., in existing alignment methods：The first step-positioning crystal orientation utilizes round or fan
The marks such as shape etch { 111 } crystal face, then the lines for representing crystal orientation are found with means such as microscopes, and are located into vertical
{ 111 } crystal face；Second step-characterization crystal orientation represents { 111 } crystal face using the lines, makes reference grating in parallel or straight
Scan tracing is connect, { 111 } crystal face is characterized；Third step-mask registration, by the reference grating or solid wire of characterization { 111 } crystal face
Item and the alignments such as the interference fringe in grating mask direction are represent, to complete the alignment of grating mask and { 111 } crystal face.It is above-mentioned
In step, positioning crystal orientation is the main source of error, accounts for 70% of overall error or more, and poor operability needs to utilize microscope
It finds and compares repeatedly, it is time-consuming and laborious, and precision is difficult to improve.
Invention content
Present invention solves the technical problem that being to provide a kind of alignment of superhigh precision grating mask and silicon chip { 111 } crystal face
Method.
In view of this, this application provides the alignment methods of a kind of grating mask and silicon chip { 111 } crystal face, including following step
Suddenly：
A), multiple registration mark figures with diffraction properties are made on silicon chip, each registration mark figure has
Two long sides parallel with the positioning side of the silicon chip；
B), by step A) obtained silicon chip carries out wet etching, and make the long side of the registration mark figure along silicon chip
{ 111 } crystal face ends, and obtains the silicon chip with multiple first registration mark figures；
C), the datum line of positioning characterization grating mask, using the length of the multiple first registration mark figure of laser irradiation
Side obtains the diffraction spot of the long side of the multiple first registration mark figure, and the datum line is overlapped with the diffraction spot.
Preferably, the registration mark figure is rectangle.
Preferably, the long side of the rectangle is 50~1000 μm, and width is 10~50 μm.
Preferably, the quantity of the registration mark figure is more than 20, and the gross area is less than 1mm2。
Preferably, the silicon chip is<110>Silicon chip or<100>Silicon chip.
Preferably, the time of the wet etching is less than 4h.
Preferably, the etching liquid of the wet etching is anisotropic etching liquid.
This application provides a kind of methods that grating mask is aligned with silicon chip { 111 } crystal face, are made on silicon chip first
The registration mark figure with diffraction properties for making one piece of small area, with the progress of wet etching, registration mark figure
Two long sides can strictly along monocrystalline silicon { 111 } crystal face etch end, until etching complete, the two of entire registration mark figure
Long side tilts completely, and shows new diffraction properties, can using the diffraction characteristic of registration mark figure after wet etching
Directly to characterize { 111 } crystal face, by the localization criteria line of the diffraction spot of registration mark figure and characterization mask grating mask direction
Alignment, is aligned to complete { 111 } crystal face with the high-precision of grating mask.The alignment methods only need to make a registration mark
Figure compares after the wet etching of short time without micro- sem observation, can zero error position { 111 } crystal face, and utilize
Its diffraction characteristic is characterized.Test result shows alignment methods alignment provided by the present application overall error≤± 0.016 °.
Description of the drawings
Fig. 1 is the schematic diagram of rectangle alignment criteria of the present invention；
Fig. 2 is the wet etching structure evolution schematic diagram of rectangle registration mark of the present invention；
Fig. 3 is the production flow diagram of rectangle registration mark of the present invention；
Fig. 4 is the schematic diagram that rectangle registration mark of the present invention is aligned with grating mask.
Specific implementation mode
For a further understanding of the present invention, the preferred embodiment of the invention is described with reference to embodiment, still
It should be appreciated that these descriptions are only the feature and advantage further illustrated the present invention, rather than to the claims in the present invention
Limitation.
The embodiment of the invention discloses the alignment methods of a kind of grating mask and silicon chip { 111 } crystal face, include the following steps：
A), multiple registration mark figures with diffraction properties are made on silicon chip, each registration mark figure has
Two long sides parallel with the positioning side of the silicon chip；
B), by step A) obtained silicon chip carries out wet etching, and make the long side of the registration mark figure along silicon chip
{ 111 } crystal face ends, and obtains the silicon chip with multiple first registration mark figures；
C), the datum line of positioning characterization grating mask, using the length of the multiple first registration mark figure of laser irradiation
Side obtains the diffraction spot of the long side of the multiple first registration mark figure, and the datum line is overlapped with the diffraction spot.
This application provides a kind of methods that grating mask is aligned with silicon chip { 111 } crystal face, are made on silicon chip first
The registration mark figure with diffraction properties for making one piece of small area, with the progress of wet etching, registration mark figure
Two long sides can strictly along monocrystalline silicon { 111 } crystal face etch end, until etching complete, the two of entire registration mark figure
Long side tilts completely, and shows new diffraction properties, can using the diffraction characteristic of registration mark figure after wet etching
Directly to characterize { 111 } crystal face, by the localization criteria line of the diffraction spot of registration mark figure and characterization mask grating mask direction
Alignment, is aligned to complete { 111 } crystal face with the high-precision of grating mask.The alignment methods only need to make a registration mark
Figure compares after the wet etching of short time without micro- sem observation, can zero error position { 111 } crystal face, and utilize
Its diffraction characteristic is characterized, and alignment overall error is preferably minimized.
The application is to realize the making of grating mask by characterization { 111 } crystal face.In grating mask and { 111 } crystal face pair
In accurate process, the application has made multiple registration mark figures with grating mask characteristic on silicon chip first, and single
Two long sides of registration mark figure are parallel with the positioning side of silicon chip；The registration mark figure that i.e. the application makes is similar to rectangle,
Only the short side of rectangle can be straight line in this application, can also be curve, and to this application, there is no limit.It is herein described right
Quasi- contour pattern is preferably rectangular.
As shown in FIG. 1, FIG. 1 is the schematic diagrames of rectangle registration mark of the present invention, wherein 1 is silicon chip, and 2 is before wet etchings
Rectangle registration mark, 3 be the rectangle registration mark after the completion of wet etching, and 4 be { 111 } crystal face in practice.
According to the present invention, the size of rectangle registration mark be consider the wet etching time, make angle of inclination and
Registration mark diffraction efficiency optimization design.Design principle is：(1) lateral etching width is less than the width of single rectangle；(2) square
The length and quantitative commitments diffraction spot naked eyes of shape are visible；(3) ensure that the wet etching time is short as possible.The above principle is made mutually
About, the wet etching time is preferably smaller than 4h, and the length of single rectangle is preferably 50~1000 microns, and width is preferably 10~50 micro-
The total quantity of rice, rectangle is more than 20；The registration mark gross area is less than 1mm2, it can be produced on any position of silicon chip, greatly
Improve effective usable floor area of silicon chip.
After the completion of registration mark graphic making, silicon chip is then carried out wet etching by the application, makes the registration mark figure
The long side of shape is ended along { 111 } crystal face of silicon chip, obtains the silicon chip with multiple first registration mark figures.It is herein described
The etching liquid of wet etching is preferably anisotropic etching liquid, more preferably the KOH solution of 50wt%.The application registration mark figure
Shape wet etching structure evolution schematic diagram is as shown in Fig. 2, W in Fig. 20For the width of rectangle registration mark, L is rectangle registration mark
Length, W be rectangle registration mark overall width, θ be wet etching before and after the inclined angle of rectangular strip, y1It is brilliant for nearly { 111 }
The lateral etching width at face end, y2For the lateral etching width at remote { 111 } crystal face end, y1t1、y1t2Respectively close { 111 } crystal face end
In time t1、t2When lateral etching width, y2t1、y2t2Respectively remote { 111 } crystal face end is in time t1、t2When lateral etching
Width.As shown in Figure 2, when wet etching, the left and right etching width of single rectangular mask top (intersection) will appear difference.Tool
The process of body is：
By the mechanism of anisotropic wet etch it is found that the lateral etching width y at nearly vertical { 111 } crystal face end1Equal to vertical
The directly lateral etching width of { 111 } crystal face, is expressed as：
y1=v (111) t；
The lateral etching width y at remote vertical { 111 } crystal face end2It is expressed as：
y2=v (θ) t,
Wherein, θ is the misalignment angle on rectangular strip side and vertical { 111 } crystal face.In actual fabrication, rectangular strip 2 with it is actual
{ 111 } the angular deviation θ of crystal face 4 is difficult to avoid that, v (111) ＜ ＜ v (θ), when anisotropic wet etch, the side meeting of rectangular strip
It strictly promotes and etches along { 111 } crystal face, as time increases, { 111 } crystal face etched constantly increases, until rectangular strip
{ 111 } crystal face etches cut-off completely in range.At this point, form one it is inclined new with 2 angle o degree of former rectangle registration mark
Rectangle registration mark 3.Correspondingly, rectangle registration mark 3 shows new diffraction properties.
Fig. 3 is that rectangle registration mark of the present invention etches front and back flow chart, and 5 be wet etching mask in figure, and 6 be silicon substrate,
Fig. 3 a are the side view of rectangle registration mark before wet etching, and Fig. 3 b are the side view of rectangle registration mark when wet etching is completed
With side view partial cutaway view, Fig. 3 c be wet etching after remove mask rectangle registration mark side view.
According to the present invention, after obtaining the new registration mark figure with Grating Properties, the application is then carried out to fiducial mark
{ 111 } crystal face of will profiles characteristic and the alignment procedures of grating mask, the i.e. datum line of positioning characterization grating mask, using laser
The long side for irradiating the multiple first registration mark figure obtains the diffraction of the long side of the multiple first registration mark figure
Spot overlaps the datum line with the diffraction spot.Fig. 4 is that rectangle registration mark of the present invention is directed at schematic diagram with grating mask,
7 be laser in figure, and 8 be grating mask, and 9 be receiving screen, and 10 be the position baseline for characterizing grating mask direction, and 11 be rectangle
The diffraction pattern of registration mark 3.
In above process, the datum line of characterization grating mask is positioned first, and the direction of grating mask is interference fringe
Direction, orient one first with the mask graph in the reference element (plane mirror etc.) or ultraviolet photolithographic in holographic light path
Item characterizes the datum line in grating mask direction, and concrete operations are：Beam of laser is used to be beaten in holographic light path with multiple incidence angles
Plane mirror on, draw a straight line being made of reflection spot on receiving screen, which is characterization grating mask direction
Datum line；Or beaten on the mask graph in ultraviolet photolithographic with beam of laser, one is drawn on receiving screen by diffraction spot
The straight line of composition, the straight line are the datum line for characterizing grating mask direction；Then by beam of laser incidence rectangle registration mark
It is set diffraction time occur；Adjustment includes the silicon chip orientation of rectangle registration mark, makes the diffraction spot and characterization grating of registration mark
The position baseline in mask direction is completely superposed, and so far, that is, completes the alignment of grating mask and silicon chip { 111 } crystal face.
In above-mentioned alignment procedures, the alignment of position error and diffraction spot and datum line of the alignment error from datum line
Error, size depend on the distance D of the resolution error Δ l that hot spot is overlapped with datum line, hot spot to reference element or silicon chip.It examines
Actual experiment is measured, if Δ l=1mm, D >=5000mm, then the alignment error calculation formula of rectangle registration mark and grating mask is such as
Shown in lower, it is computed total alignment error and is less than or equal to ± 0.016 °.
The alignment methods of herein described grating mask and silicon chip { 111 } crystal face, are used for<110>Silicon chip, by primary short
The wet etching of time positions and characterizes vertical { 111 } crystal face；It can also be used for<100>Silicon chip, by the wet method of a short time
Etching positions and characterizes inclination { 111 } crystal face；The interference fringe and silicon chip in grating mask direction are characterized suitable for holographic lithography
{ 111 } alignment of crystal face, is also applied in ultraviolet photolithographic, the alignment of grating lines and { 111 } crystal face on mask plate.
The present invention is a kind of superhigh precision alignment methods of grating mask and silicon chip { 111 } crystal face, is made on silicon chip 1 first
The rectangle registration mark 2 with diffraction properties for making one piece of small area, with the progress of wet etching, four side meetings of rectangle
It strictly etches and ends along { 111 } crystal face of monocrystalline silicon, until etching is completed, the side of entire rectangle tilts completely, and shows
New diffraction properties can directly characterize { 111 } crystal face 4 using the diffraction characteristic of rectangle registration mark 3；By rectangle pair
The diffraction spot 11 of fiducial mark will 3 is aligned with the position baseline 10 of characterization grating mask 8, is covered with grating to complete { 111 } crystal face 4
The high-precision of mould 8 is aligned.The alignment methods, it is only necessary to a rectangle registration mark is made, after the wet etching of short time,
Compare without micro- sem observation, can zero error position { 111 } crystal face, and characterized using its diffraction characteristic.
The application grating mask and the alignment methods of silicon chip { 111 } crystal face are specially：
(1) it is positioned using registration mark figure wet etching and characterizes { 111 } crystal face；
Registration mark figure such as rectangle 2 is made at 1 edge of silicon chip, the long side of rectangle and the existing positioning side of silicon chip are right as possible
Together, no required precision；Wet etching enough time ends until the long side of rectangular is completely stringent along { 111 } crystal face；Removal
The wet etching mask 5 of registration mark makes the rectangle registration mark 3 in silicon substrate 6 be completely exposed.The step, does not need microscope
Approximate { 111 } crystal face is found, time-saving and efficiency, the positioning of repeatable zero error are realized.
(2) grating mask is made to be aligned with rectangle registration mark
The direction of grating mask 8 is the direction of interference fringe, first with the reference element (plane mirror in holographic light path
Deng) or ultraviolet photolithographic in mask graph orient the datum line 10 in a characterization grating mask direction；Beam of laser 8 is entered
Penetrating registration mark 3 makes it diffraction time occur；Adjustment includes 1 orientation of silicon chip of rectangle registration mark 3, makes the diffraction of registration mark
Spot 11 and the position baseline 10 in 8 direction of characterization grating mask are completely superposed, and so far, that is, complete grating mask 8 and silicon chip
{ 111 } alignment of crystal face 4.The results show that total alignment error of grating mask of the present invention and silicon chip { 111 } crystal face be ±
0.016 °, strong technical support is provided for the development of high linear density high-aspect-ratio grating.
The alignment methods that the present invention uses, it is only necessary to a rectangle registration mark is made, by the wet etching of short time
Afterwards, compare without micro- sem observation, can zero error position { 111 } crystal face, and characterized, will be aligned using its diffraction characteristic
Overall error is preferably minimized；Present invention preferably employs rectangle registration marks, and figure is simple, and area is up to 1mm2Within, it can be produced on
Any position of silicon chip significantly increases effective usable floor area of silicon chip；To being produced on<110>Silicon chip,<100>It is needed on silicon chip
The grating mask to be aligned with { 111 } crystal face high-precision is applicable in；To in holographic lithography or ultraviolet photolithographic, grating mask and silicon chip
{ 111 } alignment of crystal face is applicable in；Then alignment methods provided by the present application have universality.
For a further understanding of the present invention, with reference to embodiment to grating mask provided by the invention and silicon chip { 111 }
The alignment methods of crystal face are described in detail, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
With<110>For silicon chip, the single rectangle width W of rectangle registration mark0It it is 10 microns, length L is 100 microns, square
Shape quantity is 200, and the gross area of registration mark is 0.4mm2, for interference fringe in holographic lithography and silicon chip { 111 } crystal face
Alignment.The specific steps of alignment methods include：
1. making rectangle registration mark 2 on silicon chip 1, and etch into the etching mask of resistance to wet method such as silicon nitride or silica
In 5；
2. at 60 DEG C, wet etching 3 hours in 50wt%KOH solution form new rectangle registration mark 3 in silicon substrate 6,
Mask 5 is locally removed with HF solution or dry etching, rectangle registration mark 3 is made to be completely exposed, so far, silicon chip { 111 } crystal face 4
Zero error positioning is completed；
3. in the holographic light path for building completion, the selected reference element for representing 8 direction of grating mask, using beam of laser
7 scanning reflections record a datum line 10 on receiving screen 9；
4. the silicon chip 1 comprising rectangle registration mark 3 is placed on position to be exposed (temporarily to block interference region, prevent silicon
Piece is exposed), with the incident rectangle registration mark 3 of laser 7, a series of diffraction patterns 11 are will appear on receiving screen 9, adjust silicon chip
1, so that diffraction pattern 11 is aligned with datum line 10；
So far, grating mask 8 and the alignment of silicon chip { 111 } crystal face 4 are completed.
The present processes alignment error from step 3. and 4. in datum line 10 record and diffraction pattern 11 and base
The alignment of directrix 10 depends on the distance of the resolution error Δ l that hot spot is overlapped with datum line, hot spot to reference element or silicon chip
D；Δ l depends on human eye resolution capability to a certain extent, can improve alignment precision by increasing D, in the present embodiment, take Δ l
=1mm, D=5000mm, then the alignment error calculation formula of rectangle registration mark and grating mask is as follows, and it is total right to be computed
Quasi- error is ± 0.016 °.
Embodiment 2
With<110>For silicon chip, the single rectangle width W of rectangle registration mark0It it is 20 microns, length L is 200 microns, square
Shape quantity is 100, and the gross area of registration mark is 0.8mm2, for interference fringe in holographic lithography and silicon chip { 111 } crystal face
Alignment.
The characterization of progress silicon chip { 111 } crystal face, the alignment of grating mask and registration mark and etc., pilot process and implementation
Example one is identical.
Remaining is identical as embodiment one.
Embodiment 3
With<100>For silicon chip, the single rectangle width W of rectangle registration mark0It it is 20 microns, length L is 200 microns, square
Shape quantity is 100, and the gross area of registration mark is 0.8mm2, brilliant with silicon chip { 111 } for mask graph in ultraviolet photolithographic
The alignment in face.
1. making rectangle registration mark 2 on silicon chip 1, and etch into the etching mask of resistance to wet method such as silicon nitride or silica
In 5；
2. carrying out wet etching at 60 DEG C, in 50wt%KOH solution about 4 hours, new rectangle alignment is formed in silicon substrate 6
Mark 3 locally removes mask 5 with HF solution or dry etching, rectangle registration mark 3 is made to be completely exposed, so far, silicon chip { 111 }
The zero error positioning of crystal face 4 is completed；
3. in ultraviolet photolithographic, the grating mask 8 made in advance on mask is beaten with beam of laser 7, is remembered on receiving screen 9
Its diffraction pattern is recorded, as datum line 10；
4. the silicon chip 1 comprising rectangle registration mark 3 is placed on position to be exposed, with the incident rectangle registration mark of laser 7
3, a series of diffraction patterns 11 are will appear on receiving screen 9, using the micro-adjusting mechanism of ultraviolet photolithographic machine, silicon chip 1 is adjusted, makes diffraction
Hot spot 11 is aligned with datum line 10；
So far, grating mask 8 and the alignment of silicon chip { 111 } crystal face 4 are completed.
This implementation alignment error from step 3. and 4. in datum line 10 record and diffraction pattern 11 and datum line 10
Alignment, size depends on the distance D of the resolution error Δ l that is overlapped with datum line of hot spot, hot spot to reference element or silicon chip；
Δ l depends on human eye resolution capability to a certain extent, alignment precision can be improved by increasing D, in the embodiment.Take Δ l=
1mm, D=5000mm, then the alignment error calculation formula of rectangle registration mark and grating mask is as follows, is computed total alignment
Error is ± 0.016 °.
The explanation of above example is only intended to facilitate the understanding of the method and its core concept of the invention.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvements and modifications, these improvement and modification are also fallen within the protection scope of the claims of the present invention.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (7)
1. the alignment methods of a kind of grating mask suitable for high linear density transmission grating and silicon chip { 111 } crystal face, including it is following
Step：
A), multiple registration mark figures with diffraction properties are made on silicon chip, each registration mark figure has and institute
State two parallel long sides of the positioning side of silicon chip；
B), by step A) obtained silicon chip carries out wet etching, and make the long side of the registration mark figure along { 111 } of silicon chip
Crystal face ends, and obtains the silicon chip with multiple first registration mark figures；
C), the datum line of positioning characterization grating mask is obtained using the long side of the multiple first registration mark figure of laser irradiation
To the diffraction spot of the long side of the multiple first registration mark figure, the datum line is overlapped with the diffraction spot.
2. alignment methods according to claim 1, which is characterized in that the registration mark figure is rectangle.
3. alignment methods according to claim 2, which is characterized in that the long side of the rectangle is 50~1000 μm, width
It is 10~50 μm.
4. alignment methods according to claim 1 or 2, which is characterized in that the quantity of the registration mark figure is more than 20,
The gross area is less than 1mm2。
5. alignment methods according to claim 1 or 2, which is characterized in that the silicon chip is<110>Silicon chip or<100>Silicon
Piece.
6. alignment methods according to claim 1 or 2, which is characterized in that the time of the wet etching is less than 4h.
7. alignment methods according to claim 1 or 2, which is characterized in that the etching liquid of the wet etching is each to different
Property etching liquid.
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