CN105428267A - 高可靠超小金属陶瓷表面贴器件的封装工艺 - Google Patents
高可靠超小金属陶瓷表面贴器件的封装工艺 Download PDFInfo
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- CN105428267A CN105428267A CN201510940790.6A CN201510940790A CN105428267A CN 105428267 A CN105428267 A CN 105428267A CN 201510940790 A CN201510940790 A CN 201510940790A CN 105428267 A CN105428267 A CN 105428267A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 240000006409 Acacia auriculiformis Species 0.000 claims description 17
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- 238000005516 engineering process Methods 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000035939 shock Effects 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 3
- 230000032683 aging Effects 0.000 claims description 3
- 239000011195 cermet Substances 0.000 claims description 3
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- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Ceramic Products (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
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CN201510940790.6A CN105428267B (zh) | 2015-12-16 | 2015-12-16 | 高可靠超小金属陶瓷表面贴器件的封装工艺 |
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CN201510940790.6A CN105428267B (zh) | 2015-12-16 | 2015-12-16 | 高可靠超小金属陶瓷表面贴器件的封装工艺 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373925A (zh) * | 2016-11-30 | 2017-02-01 | 济南市半导体元件实验所 | 一种抗大电流冲击高可靠表面贴装的二极管及其制备方法 |
CN109188232A (zh) * | 2018-09-06 | 2019-01-11 | 河北工业大学 | 一种igbt模块状态评估与剩余寿命预测模型的构建方法 |
CN109560026A (zh) * | 2018-12-03 | 2019-04-02 | 北京遥感设备研究所 | 一种真空电子组件力学环境适应性装置 |
CN111283286A (zh) * | 2020-03-09 | 2020-06-16 | 成都川美新技术股份有限公司 | 两种射频接头的装配方法和电子产品 |
CN111710653A (zh) * | 2020-06-09 | 2020-09-25 | 格物感知(深圳)科技有限公司 | 一种多芯片混合封装抗发热、磁场的方法 |
CN112938889A (zh) * | 2021-02-01 | 2021-06-11 | 南京理工大学 | 基于图形化金锡焊的mems惯性传感器低应力封装结构及方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684987A (ja) * | 1992-04-27 | 1994-03-25 | Nec Corp | 半導体装置の樹脂封止金型及び製造方法 |
CN102157405A (zh) * | 2010-12-22 | 2011-08-17 | 北京时代民芯科技有限公司 | 基于熔封封帽工艺的芯片真空共晶焊接方法 |
CN203367260U (zh) * | 2013-06-27 | 2013-12-25 | 北京新雷能科技股份有限公司 | 一种功率陶瓷外壳和功率芯片封装结构 |
CN103985646A (zh) * | 2014-05-15 | 2014-08-13 | 中国电子科技集团公司第十三研究所 | 替代氢气炉进行芯片烧结的方法 |
CN104362106A (zh) * | 2014-10-13 | 2015-02-18 | 华东光电集成器件研究所 | 一种集成电路外引线焊接方法 |
-
2015
- 2015-12-16 CN CN201510940790.6A patent/CN105428267B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684987A (ja) * | 1992-04-27 | 1994-03-25 | Nec Corp | 半導体装置の樹脂封止金型及び製造方法 |
CN102157405A (zh) * | 2010-12-22 | 2011-08-17 | 北京时代民芯科技有限公司 | 基于熔封封帽工艺的芯片真空共晶焊接方法 |
CN203367260U (zh) * | 2013-06-27 | 2013-12-25 | 北京新雷能科技股份有限公司 | 一种功率陶瓷外壳和功率芯片封装结构 |
CN103985646A (zh) * | 2014-05-15 | 2014-08-13 | 中国电子科技集团公司第十三研究所 | 替代氢气炉进行芯片烧结的方法 |
CN104362106A (zh) * | 2014-10-13 | 2015-02-18 | 华东光电集成器件研究所 | 一种集成电路外引线焊接方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373925A (zh) * | 2016-11-30 | 2017-02-01 | 济南市半导体元件实验所 | 一种抗大电流冲击高可靠表面贴装的二极管及其制备方法 |
CN106373925B (zh) * | 2016-11-30 | 2018-07-20 | 济南市半导体元件实验所 | 一种抗大电流冲击高可靠表面贴装的二极管及其制备方法 |
CN109188232A (zh) * | 2018-09-06 | 2019-01-11 | 河北工业大学 | 一种igbt模块状态评估与剩余寿命预测模型的构建方法 |
CN109188232B (zh) * | 2018-09-06 | 2021-04-27 | 河北工业大学 | 一种igbt模块状态评估与剩余寿命预测模型的构建方法 |
CN109560026A (zh) * | 2018-12-03 | 2019-04-02 | 北京遥感设备研究所 | 一种真空电子组件力学环境适应性装置 |
CN111283286A (zh) * | 2020-03-09 | 2020-06-16 | 成都川美新技术股份有限公司 | 两种射频接头的装配方法和电子产品 |
CN111710653A (zh) * | 2020-06-09 | 2020-09-25 | 格物感知(深圳)科技有限公司 | 一种多芯片混合封装抗发热、磁场的方法 |
CN112938889A (zh) * | 2021-02-01 | 2021-06-11 | 南京理工大学 | 基于图形化金锡焊的mems惯性传感器低应力封装结构及方法 |
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