CN105428189A - Slow wave structure of coplanar waveguide - Google Patents
Slow wave structure of coplanar waveguide Download PDFInfo
- Publication number
- CN105428189A CN105428189A CN201610003957.0A CN201610003957A CN105428189A CN 105428189 A CN105428189 A CN 105428189A CN 201610003957 A CN201610003957 A CN 201610003957A CN 105428189 A CN105428189 A CN 105428189A
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- slow wave
- wave structure
- conduction band
- planar waveguide
- coplanar waveguide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
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Abstract
The invention discloses a slow wave structure of a coplanar waveguide, wherein the slow wave structure of the coplanar waveguide belongs to the technical field of microwave electrovacuum and relates to a travelling wave tube amplifier device. The slow wave structure of the coplanar waveguide comprises a dielectric substrate (2) and a metal layer (1) on the surface of the dielectric substrate (2). The metal layer (1) comprises a central conduction band and grounded metal surfaces at two sides of the central conduction band. The shape of the central conduction band is a periodical bent curve. The central conduction band is isolated from the grounded metal surfaces at two sides. The slow wave structure of the coplanar waveguide can effectively settle a problem of electron accumulation on a microstrip slow wave structure, and serial connection or parallel connection with other microwave devices is easily realized, thereby easily realizing small size and integration of a vacuum device. The vacuum device with the structure of the invention has relatively low working voltage, and the coupling impedance curve and the dispersion curve are relatively flat, thereby realizing wide frequency band of the vacuum device and reducing gain fluctuation of the vacuum device in the working frequency band. Therefore the slow wave structure of the coplanar waveguide has relatively high potential and is suitable for a miniature planar travelling wave tube.
Description
Technical field
The present invention's design belongs to microwave electric vacuum technology field, relates to travelling-wave tube amplifier part.
Background technology
Travelling-wave tube amplifier is microwave vacuum device high-frequency signal being amplified by electromagnetic field and electron beam generation energy exchange, and travelling wave tube leans on the speed of continuous modulation electron beam to realize the microwave tube of enlarging function.Travelling wave tube makes it have very important effect in vacuum electronics field because of its high power, high-gain, high efficiency, broadband and long-life, is widely used in the fields such as electronic countermeasures, communication, guidance.
Present stage is the most widely used in each field is helix TWT and coupled-cavity TWT, although it is large that this two classes travelling wave tube has power, with wide advantage, but it is bulky and very heavy, compared with solid state device, the demand of lightweight, the microwave power source that volume is little of modern electronic technology active demand cannot be met.While higher frequency development, due to the relation of transition effect, also there is the problem that difficulty of processing is large.Along with the development of science and technology, traditional electron tube receives the challenge of solid state device more and more, and solid state device volume is little, lightweight, but power is little, narrow bandwidth, cannot meet the requirement of change system to power and bandwidth.In conjunction with the advantage of vacuum device and solid state device, develop there is broadband, high efficiency, lightweight, volume is little, the novel microwave power source that can meet China's aerospace engineering and satellite demand of new generation is very necessary.How in the new situation, constantly play the advantage of vacuum device, solving the key technology difficult problem existed in technical development process is electrovacuum service workers problem in the urgent need to address.
Propose multiple micro-band class plane slow wave structure both at home and abroad at present, comprise two-dimentional U-shaped, the micro-band slow wave structure of V-type, three-dimensional rectangular coil line structure, Folding frame structure, reel micro-band slow wave structure etc.In conjunction with the feature of vacuum device and solid state device, scholars propose the concept of planar travelling wave tube, and this device has broadband, high efficiency, the advantage that lightweight, volume is little.This kind of plane slow wave structure also exists the development that some key issues govern the miniature TWT based on this kind of slow wave structure.One of them is exactly the problem of electron accumulation on medium substrate: vacuum device operationally, always having electronics gets in slow wave structure, the flow rate of electron tube can not reach 100% in the middle of actual, traditional device is as helix TWT, electronics is all generally directly get on helix, and the helix of metal is owing to having good electric conductivity, therefore electronics can directly be conducted away.And current plane slow wave structure is all adopt the mode of printed circuit board to process in medium substrate, when electronics is got on medium substrate time, due to the non-conductive property of medium, electronics will accumulate on medium substrate, cause current potential to decline, thus change the focus condition of electron beam, this process not only can damage medium substrate, affect the performance of slow wave structure, and travelling wave tube when serious, can be caused to work.
In microwave technology, common transport line comprises microstrip transmission line, strip line, co-planar waveguide etc., wherein microstrip transmission line is most widely used general, it is made up of metallic signal lines above dielectric-slab and grounding metal plane below, and its characteristic impedance determines primarily of the ratio of holding wire width and dielectric-slab thickness.Microstrip line is widely used, but still there are two distinct disadvantage: 1) be difficult to realize high feature resistance; 2) to be more difficultly grounded.And co-planar waveguide is made up of two ground connection conducting surfaces of the center conduction band on dielectric substrate and center conduction band homonymy, its main mould is as the criterion TEM ripple.Co-planar waveguide is widely used in the transmission line form of microwave, millimetre-wave circuit as another kind, effectively can solve above-mentioned two problems.
Summary of the invention
The invention reside in the slow wave structure providing a kind of co-planar waveguide, ribbon-like electron note is adopted to carry out mutual effect with electromagnetic wave, there is wider bandwidth of operation and lower operating voltage, and the free electronics due to disturbance can be avoided directly to get in medium substrate, thus effectively solve the problem of the electron accumulation of micro-band slow wave structure, be a kind of slow wave structure being applicable to miniaturized planar travelling wave tube with larger potentiality.
The present invention is achieved through the following technical solutions above-mentioned purpose:
The present invention includes medium substrate 2 and the metal level 1 being positioned at medium substrate 2 surface, metal level 1 comprises center conduction band and is positioned at the grounding metal plane of conduction band both sides, center, and the shape of center conduction band is periodicity bending curve and the grounding metal plane of center conduction band and both sides is mutually isolated.
Two line of rabbet joint be parallel to each other are formed between above-mentioned center conduction band and the grounding metal plane of both sides;
Above-mentioned center conduction band can be N shape, V-arrangement or sinusoidal periodic bending curve, and the grounding metal plane of both sides can the identical cyclic variation structure of Shi Yu center conduction band, can also be that other the electronics that can prevent directly gets to structure on medium base plate;
According to the action principle of cyclic slow wave structure in conjunction with technical scheme of the present invention, the unit Cycle Length defining the described line of rabbet joint is p, then described Cycle Length p can constant or increasing or decreasing or change at random.
Travelling wave tube structurally comprises the parts such as electron gun, slow wave circuit, concentrated attenuator, energy coupler, focusing system and collector.The effect of electron gun forms the electron beam meeting designing requirement.Focusing system makes electron beam keep required form, ensures that electron beam passes through slow wave circuit and occurs effectively to interact with microwave field, finally receives electron beam by collector.Microwave signal to be amplified enters slow wave circuit through input energy coupler, and advances along slow wave circuit.In the present invention, metal level 1 and medium substrate 2 form co-planar waveguide, and after periodically being bent by co-planar waveguide, the phase velocity that electromagnetic wave is propagated in the structure shown here lower than the light velocity, thus will become a kind of co-planar waveguide slow wave structure.In the course of the work, ribbon-like electron note on the metal layer side passes through, and its speed is slightly larger than the phase velocity of electromagnetic wave in co-planar waveguide slow wave structure, and in the case, electron beam and electromagnetic wave phase mutual effect, give electromagnetic wave by energy, thus realize the amplification of signal.Center conduction band has certain thickness relative to medium substrate 2 upper surface, therefore defines to have and avoid electronics directly to get to co-planar waveguide slow wave structure in medium substrate 2.
By utilizing electromagnetic simulation software to be optimized design to this structure, can find, having the following advantages compared with the conventional microstrip slow wave structure of same size:
(1) the co-planar waveguide slow wave structure of the present invention's proposition is under the protection of metal level, and electronics almost only can be fallen on the metal level of co-planar waveguide, effectively avoids the problem of electron accumulation;
(2) the present invention proposes ground connection conducting surface and the holding wire of co-planar waveguide slow wave structure are positioned at the same side of dielectric substrate, easily the connecting or being connected in parallel of realization and other microwave devices, from being easy to realize the miniaturization of vacuum device and integrated;
(3) the co-planar waveguide slow wave structure that the present invention proposes has lower operating voltage, more smooth dispersion curve, thus makes travelling wave tube have wider bandwidth of operation, is applicable to the widebandization design of electron tube;
(4) the co-planar waveguide slow wave structure parasitic parameter that proposes of the present invention is little, easily improves integrated circuit density and radiation loss is relatively little, is conducive to the operating efficiency improving device.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of embodiment of slow wave structure of co-planar waveguide of the present invention.
Fig. 2 is the scale diagrams of the slow wave structure of monocycle co-planar waveguide.
Fig. 3 is co-planar waveguide becomes slow wave structure schematic diagram by Cyclic flexion.
Fig. 4 is the slow wave structure of co-planar waveguide provided by the invention avoid electronics directly to stamp schematic diagram that medium substrate causes electron accumulation problem.
Fig. 5 is the slow wave structure of co-planar waveguide provided by the invention and the dispersion curve comparison diagram with the N shaped microstrip slow wave structure of size.
Fig. 6 is the slow wave structure of co-planar waveguide provided by the invention and the coupling impedance curve comparison figure with the N shaped microstrip slow wave structure of size.
Fig. 7 is several distressed structure monocycle schematic diagrames of the slow wave structure of this co-planar waveguide.
Embodiment
By reference to the accompanying drawings the specific embodiment of the present invention is described.
Embodiment:
A kind of slow wave structure of co-planar waveguide, as shown in Figure 1, this figure is a kind of concrete execution mode structural representation of the present invention, comprise metal level 1, medium substrate 2, described metal level 1 utilizes printed circuit technique to be printed on described dielectric substrate 2, and metal level 1 comprises center conduction band and is positioned at the grounding metal plane of conduction band both sides, center, and the shape of center conduction band is periodicity bending curve and the grounding metal plane of center conduction band and both sides forms two narrow grooves be parallel to each other.
As shown in Figure 2, define the size that above-mentioned N shape bends co-planar waveguide slow wave structure as follows: the dielectric constant of medium substrate 2 is ε, medium substrate thickness is h, lateral length is a, and Cycle Length is p, and central guiding bandwidth is w, central guiding tape thickness is t, center conduction band straight line portion length is b, and vacuum chamber height is h, and well width is w
2, both sides metal layer thickness is t
2.
The size following (unit: mm) of the structure of specific embodiments: a=1.2, b=0.5, p=0.28, w=0.02, t=0.04, h=0.1, w
2=0.11, t
2=0.015.
As shown in Figure 3, metal level 1 and medium substrate 2 form co-planar waveguide, and co-planar waveguide is bent by N shape thus forms the schematic diagram of slow wave structure, and the phase velocity that electromagnetic wave is advanced in this class formation will be less than the light velocity, therefore form co-planar waveguide slow wave structure.
By center conduction band being thickeied thus avoiding the accumulation of electronics in medium substrate as shown in Figure 4.Due to electronics existing lateral velocity in the process falling slow wave structure, also longitudinal velocity is had, its transverse and longitudinal speed ratio is generally less than 1:15, therefore under center conduction band meets certain thickness situation, electronics before falling dielectric substrate just economy-combat on the metal layer, and the both sides of center conduction band, owing to all having plated one one-tenth metal, therefore free electronics directly can only stamp metal level, thus avoids the accumulation of electronics in medium substrate.Compared with other planar microstrip slow wave structures, co-planar waveguide slow wave structure provided by the invention is planar travelling wave tube practically provides feasible scheme.
Utilize 3 D electromagnetic simulation software to bend co-planar waveguide slow wave line to N shape provided by the invention and carry out simulation calculation, obtain the high frequency characteristic data of this specific embodiments, and contrast with the N shaped microstrip slow wave structure of same size.
Fig. 5 is the comparison diagram of the slow wave structure of the co-planar waveguide of same size and the dispersion curve of microstrip line slow-wave structure.Can find out, the normalization phase velocity of co-planar waveguide slow wave structure is less, thus can make to adopt the vacuum device of this slow wave structure to have lower operating voltage; Meanwhile, the dispersion curve of the slow wave structure of co-planar waveguide is more smooth, and this makes electron beam can be synchronous with electromagnetic wave in wider frequency band range, thus makes the vacuum device adopting this slow wave structure have wider bandwidth.
Fig. 6 is the slow wave structure of the co-planar waveguide of same size and the coupling impedance curve comparison figure of microstrip line slow-wave structure, can find out, the coupling impedance of co-planar waveguide slow wave structure is less, but compared with microstrip line, the slow wave structure ground connection conducting surface of co-planar waveguide and holding wire are positioned at the same side of dielectric substrate, and easy realization being connected with other microwave devices or being connected in parallel.By the connection in series-parallel of multiple co-planar waveguide slow wave structure, the inferior position that single co-planar waveguide slow wave structure coupling impedance is relatively little can be made up, thus realize the high-power output of vacuum device and integrated.
The slow wave structure of above-mentioned co-planar waveguide as shown in Figure 7, comprise following various forms of distressed structure: its center conduction band can be the periodic structures such as N shape, sine curve, V-arrangement, the ground connection conducting surface of both sides, except carrying out except identical cyclic variation with central guiding band, can also be that other the electronics that can prevent directly gets to structure on medium base plate.
Claims (7)
1. the slow wave structure of a co-planar waveguide, comprise medium substrate (2) and be positioned at the surperficial metal level (1) of medium substrate (2), described metal level (1) comprises center conduction band and is positioned at the grounding metal plane of conduction band both sides, center, it is characterized in that, the shape of described center conduction band is for periodically bending curve; The grounding metal plane of described center conduction band and both sides is mutually isolated.
2. the slow wave structure of co-planar waveguide according to claim 1, is characterized in that, forms two line of rabbet joint be parallel to each other between described center conduction band and the grounding metal plane of both sides.
3. the slow wave structure of co-planar waveguide according to claim 1 or 2, is characterized in that, the shape of described center conduction band is N shape, V-arrangement or sinusoidal periodically bend curve.
4. the slow wave structure of co-planar waveguide according to claim 1 or 2, is characterized in that, the unit Cycle Length defining the periodicity bending curve that described center conduction band is formed is p, and described unit Cycle Length p is constant.
5. the slow wave structure of co-planar waveguide according to claim 1 or 2, is characterized in that, the unit Cycle Length defining the periodicity bending curve that described center conduction band is formed is p, and described unit Cycle Length p successively decreases.
6. the slow wave structure of co-planar waveguide according to claim 1 or 2, is characterized in that, the unit Cycle Length defining the periodicity bending curve that described center conduction band is formed is p, and described unit Cycle Length p increases progressively.
7. the slow wave structure of co-planar waveguide according to claim 1 or 2, is characterized in that, the unit Cycle Length defining the periodicity bending curve that described center conduction band is formed is p, described unit Cycle Length p change at random.
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| CN201610003957.0A CN105428189B (en) | 2016-01-04 | 2016-01-04 | A kind of slow-wave structure of co-planar waveguide |
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| CN201610003957.0A CN105428189B (en) | 2016-01-04 | 2016-01-04 | A kind of slow-wave structure of co-planar waveguide |
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| CN105428189B CN105428189B (en) | 2017-06-30 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107335147A (en) * | 2017-06-29 | 2017-11-10 | 电子科技大学 | A kind of surface wave energy coupling head suitable for microwave physical therapy |
| CN108461367A (en) * | 2018-03-28 | 2018-08-28 | 电子科技大学 | A kind of microstrip line slow-wave structure |
| CN108682607A (en) * | 2018-05-03 | 2018-10-19 | 电子科技大学 | A kind of U-shaped micro-strip slow-wave structure of corrugated casing |
| CN112466731A (en) * | 2020-11-25 | 2021-03-09 | 中国舰船研究设计中心 | Microstrip meander line slow wave structure |
| CN113381153A (en) * | 2021-06-23 | 2021-09-10 | 天津大学 | Slow-wave slot line transmission line |
| CN114360987A (en) * | 2022-01-06 | 2022-04-15 | 电子科技大学 | Coplanar double-V-shaped line slow wave structure suitable for backward wave tube |
| CN114927398A (en) * | 2022-06-10 | 2022-08-19 | 电子科技大学 | Microstrip line slow wave structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107335147A (en) * | 2017-06-29 | 2017-11-10 | 电子科技大学 | A kind of surface wave energy coupling head suitable for microwave physical therapy |
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| CN108461367B (en) * | 2018-03-28 | 2020-09-18 | 电子科技大学 | Microstrip line slow wave structure |
| CN108682607A (en) * | 2018-05-03 | 2018-10-19 | 电子科技大学 | A kind of U-shaped micro-strip slow-wave structure of corrugated casing |
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| CN113381153A (en) * | 2021-06-23 | 2021-09-10 | 天津大学 | Slow-wave slot line transmission line |
| CN113381153B (en) * | 2021-06-23 | 2022-04-05 | 天津大学 | Slow-wave slot line transmission line |
| CN114360987A (en) * | 2022-01-06 | 2022-04-15 | 电子科技大学 | Coplanar double-V-shaped line slow wave structure suitable for backward wave tube |
| CN114360987B (en) * | 2022-01-06 | 2023-03-10 | 电子科技大学 | Coplanar double-V-shaped line slow wave structure suitable for backward wave tube |
| CN114927398A (en) * | 2022-06-10 | 2022-08-19 | 电子科技大学 | Microstrip line slow wave structure |
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