CN105406357A - Plasmon photon source device and method for generating surface plasmon photon - Google Patents
Plasmon photon source device and method for generating surface plasmon photon Download PDFInfo
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- CN105406357A CN105406357A CN201510916835.6A CN201510916835A CN105406357A CN 105406357 A CN105406357 A CN 105406357A CN 201510916835 A CN201510916835 A CN 201510916835A CN 105406357 A CN105406357 A CN 105406357A
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- photon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Abstract
The invention provides a plasmon photon source device and a method for generating a surface plasmon photon. The method for generating the surface plasmon photon, provided by the invention, comprises the following steps of preparing a layer of graphene on the surface of a dielectric layer to serve as a surface plasmon transmission carrier; preparing a semiconductor layer on the graphene so that the dielectric layer and the semiconductor layer jointly form a waveguide layer of a plasmon photon source to limit a surface plasmon mode; forming a layer of semiconductor quantum dots in the semiconductor layer; and radiating the semiconductor layer with external laser so that a photon radiated by stimulation of the quantum dots is converted to the plasmon photon transmitted in the graphene due to the strong coupling effect of plasmon.
Description
Technical field
The present invention relates to surface phasmon photonics applications field, more particularly, the present invention relates to a kind of a kind of methods producing surface phasmon photon from excimer photon source device and semiconductor-quantum-point stimulated radiation such as a kind of.
Background technology
Surface phasmon is that charge density wave that conductive surface comes from free electron collective oscillation combines formation one with its electromagnet mode propagates exciton.Research nearly ten years shows, the unique optical properties utilizing surface phasmon in metal Nano structure to have can improve the resolution of near-field microscope, promote the efficiency of light-emitting diode, the regulation and control of electromagnetic field are realized at nanoscale, realize stealthy etc., and comprising data storage, nonlinear optics, sub-wavelength structure waveguide, the Applied research fields such as solar cell provide new opportunity, surface phasmon is Development of Novel photonic device simultaneously, wideband communication system, the small photon circuit that yardstick is minimum, Novel optical sensor and measuring technique provide possibility.Quantum information technology is an emerging cutting edge technology of research information process, and object is improving arithmetic speed, guarantee information security, increasing the limit breaking through existing classical information system in information capacity and raising accuracy of detection etc.The key realizing quantum information process based on phasmon be have easy and simple to handle, be easy to the integrated reliable phasmon photon source of light path.
Summary of the invention
The object of the invention is to for meeting the needs realizing quantum information application based on phasmon, providing a kind of and producing the method for surface phasmon photon and corresponding phasmon photon source device by laser irradiation semiconductor-quantum-point.
In order to realize above-mentioned technical purpose, according to the present invention, providing a kind of method producing surface phasmon photon, comprising:
First step: prepare a layer graphene at dielectric layer surface, as surface phasmon transmitting carrier;
Second step: prepare one semiconductor layer on Graphene, thus make dielectric layer and semiconductor layer jointly form the ducting layer of phasmon photon source, with limiting surface phasmon pattern;
Third step: form layer of semiconductor quantum dot in semiconductor layer inside;
4th step: utilize outside laser irradiating semiconductor layer, the photon that quantum dot stimulated radiation is gone out changes into due to phasmon close coupling effect the phasmon photon propagated in Graphene.
Preferably, the distance of semiconductor-quantum-point layer and Graphene is between 1nm-100nm.
Preferably, the spacing of each quantum dot is at more than 20nm.
Preferably, in third step, self-organizing growth technique is adopted to form one deck quantum dot in semiconductor layer inside.
Preferably, the material of semiconductor layer is III-V material.
Preferably, the material of semiconductor layer is InGaAsP material.
In order to realize above-mentioned technical purpose, according to the present invention, additionally provide a kind of phasmon photon source device, comprising: dielectric layer, the layer graphene as surface phasmon transmitting carrier being formed in dielectric layer surface, the one semiconductor layer be formed on Graphene; Wherein, layer of semiconductor quantum dot is formed in semiconductor layer inside; Wherein, dielectric layer and semiconductor layer form the ducting layer of phasmon photon source device jointly, are used for limiting surface phasmon pattern; And wherein, semiconductor layer is under swashing light-struck situation by outside, and the photon making quantum dot stimulated radiation go out changes into due to phasmon close coupling effect the phasmon photon propagated in Graphene.
Preferably, the distance of semiconductor-quantum-point layer and Graphene is between 1nm-100nm.
Preferably, the spacing of each quantum dot is at more than 20nm.
Preferably, the material of semiconductor layer is III-V material.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 schematically shows the flow chart of the method producing surface phasmon photon according to the preferred embodiment of the invention.
Fig. 2 schematically shows the cross section structure figure of phasmon photon source device according to the preferred embodiment of the invention.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
For achieving the above object, the present invention utilizes two-dimensional material Graphene to replace metal making devices to realize laser irradiation semiconductor-quantum-point and produces surface phasmon photon, the surface phasmon propagated in Graphene is wherein utilized to have extremely strong sub-wavelength Local Characteristic, irradiate lower semiconductor quantum dot generation stimulated radiation at outside laser, radiated photons is converted into the phasmon photon of the propagation in Graphene under Graphene and semiconductor-quantum-point coupling.
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described.
< first preferred embodiment >
Fig. 1 schematically shows and irradiates by laser the flow chart that semiconductor-quantum-point produces the method for surface phasmon photon according to the preferred embodiment of the invention.
As shown in Figure 1, irradiate by laser the method that semiconductor-quantum-point produces surface phasmon photon according to the preferred embodiment of the invention to comprise:
First step S1: at dielectric layer A surface preparation one layer graphene C, as surface phasmon transmitting carrier;
Such as, dull and stereotyped semiconductor technology can be adopted to perform first step S1.
Second step S2: prepare one semiconductor layer B on Graphene C, thus make dielectric layer A and semiconductor layer B jointly form the ducting layer of phasmon photon source, with limiting surface phasmon pattern;
Such as, semiconductor layer B can adopt iii-v, such as InGaAsP material.
Such as, dull and stereotyped semiconductor technology can be adopted equally to perform second step S2.
Third step S3: form layer of semiconductor quantum dot D in semiconductor layer B inside; Such as, the semiconductor technologies such as self-organizing growth are adopted to form one deck quantum dot D in semiconductor layer B inside.
Preferably, the distance of semiconductor-quantum-point layer D and Graphene C is between 1nm-100nm.And preferably, the spacing of quantum dot is wide enough so that impact each other minimizes; Such as, more than the spacing 20nm of each quantum dot, makes quantum dot impact each other negligible.
4th step S4: utilize outside laser irradiating semiconductor layer B, the photon that quantum dot D stimulated radiation is gone out (as Fig. 2 with arrow curve shown in) change into due to phasmon close coupling effect the phasmon photon propagated in Graphene C.
< second preferred embodiment >
Correspondingly, Fig. 2 schematically shows the cross section structure figure of phasmon photon source device according to the preferred embodiment of the invention.
As shown in Figure 2, phasmon photon source device comprises according to the preferred embodiment of the invention: dielectric layer A, the layer graphene C as surface phasmon transmitting carrier being formed in dielectric layer A surface, the one semiconductor layer B be formed on Graphene C; Wherein, layer of semiconductor quantum dot D is formed in semiconductor layer B inside; Wherein, dielectric layer A and semiconductor layer B forms the ducting layer of phasmon photon source device jointly, is used for limiting surface phasmon pattern; And wherein, semiconductor layer B by outside swash light-struck situation under, photon that quantum dot D stimulated radiation is gone out (as Fig. 2 with arrow curve shown in) change into due to phasmon close coupling effect the phasmon photon propagated in Graphene C.
Equally, such as, semiconductor layer B can adopt iii-v, such as InGaAsP material.
Equally, preferably, the distance of semiconductor-quantum-point layer D and Graphene C is between 1nm-100nm.And preferably, the spacing of quantum dot is wide enough so that impact each other minimizes; Such as, more than the spacing 20nm of each quantum dot, makes quantum dot impact each other negligible.
In the present invention, luminous element is by one deck quantum dot in semiconductor layer, and the two-dimensional material Graphene near it is as surface plasmon waveguide, is the carrier of phasmon photon.Due to the sub-wavelength Local Characteristic of surface phasmon, between the photon in quantum dot light emitting body and Graphene, strong Coherent coupling effect can be there is.There are two energy levels in quantum dot, namely quantum dot is made up of a ground state and an excitation state, and the relation between quantum dot two energy level difference Δ and illumination photons frequency w is depended in the stimulated radiation of quantum dot.When the photon irradiated on the semiconductor and quantum dot resonate (Δ=w), the most of converting photons gone out due to the stimulated radiation of strong Coherent coupling quantum of action point is the phasmon photon propagated in Graphene.
The present invention adopts two-dimensional material Graphene as the carrier of surface phasmon, and the converting photons that the stimulated radiation of outside laser irradiation lower semiconductor quantum dot goes out is the surface phasmon photon propagated in Graphene.Produce scheme have that device topography is simple based on surface phasmon photon of the present invention, compact conformation, easily and the feature such as external circuit is integrated.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the term " first " in specification, " second ", " the 3rd " etc. describe only for distinguishing each assembly, element, step etc. in specification, instead of for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. produce a method for surface phasmon photon, it is characterized in that comprising:
First step: prepare a layer graphene at dielectric layer surface, as surface phasmon transmitting carrier;
Second step: prepare one semiconductor layer on Graphene, thus make dielectric layer and semiconductor layer jointly form the ducting layer of phasmon photon source, with limiting surface phasmon pattern;
Third step: form layer of semiconductor quantum dot in semiconductor layer inside;
4th step: utilize outside laser irradiating semiconductor layer, the photon that quantum dot stimulated radiation is gone out changes into due to phasmon close coupling effect the phasmon photon propagated in Graphene.
2. the method for generation surface phasmon photon according to claim 1, it is characterized in that, the distance of semiconductor-quantum-point layer and Graphene is between 1nm-100nm.
3. the method for generation surface phasmon photon according to claim 1 and 2, it is characterized in that, the spacing of each quantum dot is at more than 20nm.
4. the method for generation surface phasmon photon according to claim 1 and 2, is characterized in that, in third step, adopts self-organizing growth technique to form one deck quantum dot in semiconductor layer inside.
5. the method for generation surface phasmon photon according to claim 1 and 2, is characterized in that, the material of semiconductor layer is III-V material.
6. the method for generation surface phasmon photon according to claim 1 and 2, is characterized in that, the material of semiconductor layer is InGaAsP material.
7. a phasmon photon source device, is characterized in that comprising: dielectric layer, the layer graphene as surface phasmon transmitting carrier being formed in dielectric layer surface, the one semiconductor layer be formed on Graphene; Wherein, layer of semiconductor quantum dot is formed in semiconductor layer inside; Wherein, dielectric layer and semiconductor layer form the ducting layer of phasmon photon source device jointly, are used for limiting surface phasmon pattern; And wherein, semiconductor layer is under swashing light-struck situation by outside, and the photon making quantum dot stimulated radiation go out changes into due to phasmon close coupling effect the phasmon photon propagated in Graphene.
8. phasmon photon source device according to claim 7, is characterized in that, the distance of semiconductor-quantum-point layer and Graphene is between 1nm-100nm.
9. the phasmon photon source device according to claim 7 or 8, is characterized in that, the spacing of each quantum dot is at more than 20nm.
10. the phasmon photon source device according to claim 7 or 8, is characterized in that, the material of semiconductor layer is III-V material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526724A (en) * | 2016-12-28 | 2017-03-22 | 广西师范大学 | SPP propagation device based on cadmium sulfide nanowire and graphene nanobelt |
| CN106653957A (en) * | 2016-10-27 | 2017-05-10 | 中国科学院理化技术研究所 | Surface plasmon electro-excitation and electrical modulation integrated device and manufacturing method thereof |
| CN110031988A (en) * | 2019-04-24 | 2019-07-19 | 西安柯莱特信息科技有限公司 | A kind of surface phasmon generation light source adjusting different communication modes |
| WO2019165712A1 (en) * | 2018-03-01 | 2019-09-06 | 东南大学 | Surface plasmon ultraviolet nano pulse laser having multi-resonance competition mechanism |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066136A (en) * | 2012-12-27 | 2013-04-24 | 东南大学 | Light conversion film for improving quantum efficiency |
| CN104926155A (en) * | 2015-05-28 | 2015-09-23 | 福州大学 | Preparation method for metal/organic shell core quantum dot-semiconductor quantum dot composite luminous film |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066136A (en) * | 2012-12-27 | 2013-04-24 | 东南大学 | Light conversion film for improving quantum efficiency |
| CN104926155A (en) * | 2015-05-28 | 2015-09-23 | 福州大学 | Preparation method for metal/organic shell core quantum dot-semiconductor quantum dot composite luminous film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653957A (en) * | 2016-10-27 | 2017-05-10 | 中国科学院理化技术研究所 | Surface plasmon electro-excitation and electrical modulation integrated device and manufacturing method thereof |
| CN106653957B (en) * | 2016-10-27 | 2018-08-10 | 中国科学院理化技术研究所 | A kind of surface phasmon electroexcitation and electricity modulation integrated device and preparation method thereof |
| CN106526724A (en) * | 2016-12-28 | 2017-03-22 | 广西师范大学 | SPP propagation device based on cadmium sulfide nanowire and graphene nanobelt |
| WO2019165712A1 (en) * | 2018-03-01 | 2019-09-06 | 东南大学 | Surface plasmon ultraviolet nano pulse laser having multi-resonance competition mechanism |
| US10971895B2 (en) | 2018-03-01 | 2021-04-06 | Southeast University | Surface plasmon infrared nano pulse laser having multi-resonance competition mechanism |
| CN110031988A (en) * | 2019-04-24 | 2019-07-19 | 西安柯莱特信息科技有限公司 | A kind of surface phasmon generation light source adjusting different communication modes |
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| CN105406357B (en) | 2018-12-11 |
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