CN105405959A - Ternary system relaxation ferroelectric monocrystal piezoelectric transformer having high power density - Google Patents
Ternary system relaxation ferroelectric monocrystal piezoelectric transformer having high power density Download PDFInfo
- Publication number
- CN105405959A CN105405959A CN201510725277.5A CN201510725277A CN105405959A CN 105405959 A CN105405959 A CN 105405959A CN 201510725277 A CN201510725277 A CN 201510725277A CN 105405959 A CN105405959 A CN 105405959A
- Authority
- CN
- China
- Prior art keywords
- lead
- piezoelectric transformer
- ternary system
- single crystal
- relaxation ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000005621 ferroelectricity Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000010287 polarization Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 230000010365 information processing Effects 0.000 abstract description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 238000001453 impedance spectrum Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000028161 membrane depolarization Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 description 1
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention provides a ternary system relaxation ferroelectric monocrystal piezoelectric transformer having the high power density, the monocrystal piezoelectric transformer comprises a piezoelectric element, and a material of the piezoelectric element is lead magnesium niobate-lead indium niobate-lead titanate monocrystalline. The ternary system relaxation ferroelectric monocrystal piezoelectric transformer provided in the invention has the advantages of the small volume, the light weight and simple manufacture; the power density of a current piezoelectric transformer can be obviously improved, and requirements of micromation and integration of related information processing equipment are met; and the ternary system relaxation ferroelectric monocrystal piezoelectric transformer is a power device having simple structure and excellent comprehensive performance.
Description
Technical field
The invention belongs to electricity field, relate to a kind of transformer, particularly relate to a kind of ternary system relaxation ferroelectric single crystal piezoelectric transformer with high power density.
Background technology
Along with information processing apparatus microminiaturization, integrated in the urgent need to the reaching its maturity of drive circuit, transformer is extended to AC/DC, DC/DC from high pressure field (power is usually less) and changes constant power field of electronic devices, these power electronic devices require to realize larger power stage in smaller size smaller, prepare the focus that the novel transformer with high power density also becomes Recent study.
Piezoelectric transformer is a kind of based on piezoelectricity coupling effect, is realized the electronic devices and components of voltage up-down by impedance transformation.Compared with traditional electromagnetic transformers, have that transformation ratio is large, conversion efficiency is high, without unique advantage such as electromagnetic interference, high temperature resistant and short-circuit protection.
Piezoelectric is the core parts of piezoelectric transformer, the quality of piezoelectric performance directly determines the quality of transformer performance, the mainly piezoelectric ceramic that traditional piezoelectric transformer uses, for reducing its volume, bring to power density further, in the urgent need to finding novel High-power piezoelectric material.
With PMN-PT ((1-x) Pb (Mg
1/3nb
2/3) O
3-xPbTiO
3) (hereinafter abbreviated as PMN-PT) be representative binary system high-performance relaxor ferroelectric monocrystal material tripartite's alpha region piezoelectric property near accurate homotype phase boundary can reach the 5-10 of piezoceramic material doubly, wherein, piezoelectric coefficient d
33and d
312,500pC/N, 2, more than 000pC/N can be reached respectively, electromechanical coupling factor k
33and k
31all can reach more than 90%, therefore, in the application of transducer of new generation, driver and transducer, show extraordinary prospect, also result in the extensive concern of scientific and technological circle and industrial quarters.
Applicant utilizes the piezoelectric property of PMN-PT monocrystalline excellence, take the lead in reporting individual layer and multilayer Rosen type transformer, wherein individual layer Rosen type transformer open circuit step-up ratio reaches 138, and power density is about 4 times of pattern ceramic transformer of the same race, and conversion efficiency can reach 95%.
But, further research finds, the problem that coercive field is lower, depolarization temperature is not high enough is there is in binary system PMN-PT monocrystalline when high-power applications, namely there is heating and make material property degradation, and then causing the problem of component failure, this is very disadvantageous for the application of transformer under relatively high power.How while maintenance high tension electricity coefficient and electromechanical coupling factor, mechanical quality factor can be improved, reduce the wastage, increase the coercive field of monocrystalline and widen the temperature scope of application and just seem extremely important.
Research shows, on the basis of binary system PMN-PT monocrystalline, introduce indium (In) element and prepare ternary system relaxation ferroelectric single crystal PMN-PIN-PT, monocrystalline coercive field can be made to be increased to more than 5kV/cm from 2-3kV/cm, depolarization temperature is increased to more than 100 DEG C, the mechanical quality factor of monocrystalline also increases to some extent, and ternary system relaxation ferroelectric single crystal PMN-PIN-PT brings into use on sonac, but does not find its relevant report on the transformer so far.
Summary of the invention
In order to solve the problems referred to above that binary system PMN-PT monocrystalline piezoelectric transformer exists, the invention provides a kind of ternary system relaxation ferroelectric single crystal piezoelectric transformer with high power density.
The object of the present invention is to provide a kind of ternary system relaxation ferroelectric single crystal piezoelectric transformer with high power density, described monocrystalline piezoelectric transformer comprises piezoelectric element, and the material of described piezoelectric element is lead magnesio-niobate-lead niobate lead indate-lead-lead titanates (PMN-PIN-PT) monocrystalline.
As a preferred embodiment of the present invention, described PMN is lead magnesio-niobate, and described PIN is lead niobate lead indate-lead, and described PT is lead titanates.
As a preferred embodiment of the present invention, the chemical composition of described PMN-PIN-PT is (1-x-y) Pb (Mg
1/3nb
2/3) O
3– yPb (In
1/2nb
1/2) O
3-xPbTiO
3, wherein, x=0.05-0.50, y=0.05-0.50; Be preferably x=0.25-0.35, y=0.30-0.38.
As a preferred embodiment of the present invention, described PMN-PIN-PT is positioned at tripartite's alpha region near accurate homotype phase boundary.
As a preferred embodiment of the present invention, the crystallographic orientation of described PMN-PIN-PT is [100] direction, length edge, [011] direction, thickness edge, width edge
direction.
As a preferred embodiment of the present invention, described piezoelectric element comprises upper surface and lower surface, described upper surface comprises importation and output, described importation comprises at least 2 inputs, described output comprises at least 1 output, and described output is between described input; Described lower surface comprises common ground end.
As a preferred embodiment of the present invention, described common ground end is full electrode.
As a preferred embodiment of the present invention, can be connected in parallel or be connected in series between described input, and be preferably connected in parallel.
As a preferred embodiment of the present invention, at the upper surface fired electrodes of described piezoelectric element, described piezoelectric element is divided at least three identical parts by described electrode, respectively as input and the output of transformer, go between as the upper/lower electrode of described monocrystalline piezoelectric transformer from the upper and lower surface of described input and described output respectively.
As a preferred embodiment of the present invention, described ferroelectric single crystal material PMN-PIN-PT is along thickness [011] direction polarization, and polarised direction is from upper surface to lower surface.
As a preferred embodiment of the present invention, described ferro-electricity single crystal is of a size of: length: width >=5:1, width: thickness >=3:1.
As a preferred embodiment of the present invention, described ferro-electricity single crystal is of a size of length (12-25) mm ╳ width (1-6) mm ╳ thickness (0.5-3) mm, is preferably length (15-18) mm ╳ width (2-4) mm ╳ thickness (0.5-2) mm.
As a preferred embodiment of the present invention, the top electrode size shape of described input, output is equal just as, size.
As a preferred embodiment of the present invention, the top electrode of described input, output is of a size of: length 4-7mm, width 1-6mm; Be preferably length 5-6mm, width 2-4mm.
As a preferred embodiment of the present invention, the direction of vibration of described input and output all along its length.
As a preferred embodiment of the present invention, described input is identical with output shape, size is equal.
As a preferred embodiment of the present invention, interval 0.5-2mm between described input and output, as 0.7mm, 1.8mm; Be preferably 0.8-1.5mm, as 1.0mm.
As a preferred embodiment of the present invention, the one or more combination thing in described monocrystalline piezoelectric transformer employing silver, gold, platinum etc., as electrode, is preferably and adopts silver as electrode, be more preferably and adopt the silver fired as electrode.
The present invention utilizes the character such as the high-curie temperature of ternary system piezoelectric monocrystalline, high phase transition temperature, large coercive field, high tension electricity coefficient and superior mechanical-electric coupling performance to obtain high power density and exports, and is up to 50W/cm
3above, 6 times of the power density of current identical type piezoelectric ceramic transformer are about.This device volume is little, quality light, it is simple to make, and can significantly improve the power density of current piezoelectric transformer, meets the requirement that relevant information treatment facility is microminiaturized and integrated, is that a kind of structure is simple, the power device of high comprehensive performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of monocrystalline piezoelectric transformer provided by the invention;
Fig. 2 is the impedance spectrogram near monocrystalline piezoelectric transformer inputs resonance frequency provided by the invention;
Fig. 3 is the impedance spectrogram near monocrystalline piezoelectric transformer output resonance frequency provided by the invention;
Fig. 4 is monocrystalline piezoelectric step-up ratio provided by the invention with the change curve of different loads and frequency;
Fig. 5 is the relation curve of power output and input voltage under monocrystalline piezoelectric transformer matched load provided by the invention.
Embodiment
monocrystalline piezoelectric transformer device structure
As shown in Figure 1, for ternary system relaxation ferroelectric single crystal piezoelectric transformer provided by the invention, get the monocrystalline being of a size of length 17mm ╳ width 3mm ╳ thickness 1mm, silver electrode is fired at monocrystalline upper surface, monocrystalline is divided into three parts of same size by silver electrode, three parts are respectively as the input of transformer and output, and output is between input.Go between as the upper/lower electrode of transformer from the upper and lower surface of input and output respectively, two inputs are connected in parallel.
Transformer comprises importation and output, importation comprises two inputs in left and right, output is between two inputs, the upper surface interval 1mm of importation and output, importation and output share bottom surface, as the common ground end of transformer, namely the upper surface of importation, output is of a size of length 5mm, and width is 3mm.
Ternary system relaxation ferroelectric single crystal piezoelectric transformer provided by the invention adopts the silver fired as electrode, the thickness of silver electrode is 10 μm, respectively from importation, the upper surface of output and lower surface draw upper/lower electrode as ternary system relaxation ferroelectric single crystal piezoelectric transformer provided by the invention.
Ternary system relaxation ferroelectric single crystal piezoelectric transformer polarised direction through-thickness provided by the invention, from upper surface to lower surface, direction as shown by the arrows in Figure 1, importation and output all utilize the transversal stretching vibration mode of piezoelectric vibrator, direction of vibration along its length, the transversal stretching pattern electromechanical coupling factor k of transformer
31more than 90%, d can be reached
31can 1, more than 500pC/N be reached.
The piezoelectric element of ternary system relaxation ferroelectric single crystal piezoelectric transformer provided by the invention is ternary system relaxation ferroelectric single crystal material PMN-PIN-PT, and concrete component is 0.35PMN-0.32PIN-0.33PT, and component is positioned at tripartite's alpha region near accurate homotype phase boundary.
ternary system relaxation ferroelectric single crystal piezoelectric transformer electric property
impedance
The impedance spectrum of input and output utilizes electric impedance analyzer to test, the impedance spectrum of input, output respectively as shown in Figure 2 and Figure 3, during the impedance spectrum of test input, output short circuit is connected, during the impedance spectrum of test output terminal, input short circuit is connected, from Fig. 2, Fig. 3, in a short-circuit situation, the resonance frequency of transformer inputs, output is about 35kHz.
step-up ratio
Signal generator is connected to power amplifier, output signal is connected to input, output is connected with purely resistive load, is jointly connected to oscilloscope two ends, and to test the step-up ratio under different loads and frequency, result as shown in Figure 4.As shown in Figure 4, along with the increase of load, step-up ratio constantly increases, and resonance frequency moves to high frequency direction.
power
Under matched load, the test input of transformer and voltage, the electric current of output, the actual power of transformer under calculating respective load, thus obtain the operating efficiency of transformer, transformer all has higher efficiency in wider frequency range, can reach more than 95%.
Fig. 5 is the relation curve of power output and input voltage, and when input voltage is 250V, power output is 2W.In test process, utilize infrared radiation thermometer to monitor the variations in temperature of transformer, be no more than the condition of 5 DEG C in transformer temperature rise under, power output is maximum reaches 2.5W, and corresponding power density is about 50W/cm
3, significantly higher than the power density of ceramic transformer and the power density of binary PMN-PT monocrystalline transformer, wherein, the power density of conventional ceramic transformer is 7.7W/cm
3, the power density of binary PMN-PT monocrystalline transformer is about 12W/cm
3.
Be described in detail specific embodiments of the invention above, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and substituting also all among category of the present invention.Therefore, equalization conversion done without departing from the spirit and scope of the invention and amendment, all should contain within the scope of the invention.
Claims (10)
1. have a ternary system relaxation ferroelectric single crystal piezoelectric transformer for high power density, it is characterized in that, described monocrystalline piezoelectric transformer comprises piezoelectric element, and the material of described piezoelectric element is lead magnesio-niobate-lead niobate lead indate-lead-lead titanate monocrystal.
2. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 1, is characterized in that, the chemical composition of described lead magnesio-niobate-lead niobate lead indate-lead-lead titanates is (1-x-y) Pb (Mg
1/3nb
2/3) O
3-yPb (In
1/2nb
1/2) O
3-xPbTiO
3, wherein, x=0.05-0.50, y=0.05-0.50.
3. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 1, is characterized in that, described lead magnesio-niobate-lead niobate lead indate-lead-lead titanates is positioned at tripartite's alpha region near accurate homotype phase boundary.
4. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 1, is characterized in that, the crystallographic orientation of described lead magnesio-niobate-lead niobate lead indate-lead-lead titanates is [100] direction, length edge, [011] direction, thickness edge, width edge
direction, and along thickness [011] direction polarization.
5. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 1, it is characterized in that, described piezoelectric element comprises upper surface and lower surface, described upper surface comprises importation and output, described importation comprises at least 2 inputs, described output comprises at least 1 output, and described output is between described input; Described lower surface comprises common ground end.
6. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 5, is characterized in that, described ferro-electricity single crystal is of a size of: length: width >=5:1, width: thickness >=3:1.
7. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 5, is characterized in that, interval 0.5-2mm between described input and output.
8. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 5, is characterized in that, the top electrode shape of described input, output is identical, size is equal.
9. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 5, is characterized in that, the transversal stretching pattern electromechanical coupling factor k of described monocrystalline piezoelectric transformer
31be greater than 90%, d
31be greater than 1,500pC/N.
10. ternary system relaxation ferroelectric single crystal piezoelectric transformer according to claim 5, is characterized in that, described monocrystalline piezoelectric transformer is under temperature rise is less than 5 DEG C of conditions, and power density is more than or equal to 50W/cm
3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510725277.5A CN105405959B (en) | 2015-10-29 | 2015-10-29 | A kind of ternary system relaxation ferroelectric single crystal piezoelectric transformer of transversal stretching vibration mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510725277.5A CN105405959B (en) | 2015-10-29 | 2015-10-29 | A kind of ternary system relaxation ferroelectric single crystal piezoelectric transformer of transversal stretching vibration mode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105405959A true CN105405959A (en) | 2016-03-16 |
| CN105405959B CN105405959B (en) | 2018-02-09 |
Family
ID=55471333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510725277.5A Active CN105405959B (en) | 2015-10-29 | 2015-10-29 | A kind of ternary system relaxation ferroelectric single crystal piezoelectric transformer of transversal stretching vibration mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105405959B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106441509A (en) * | 2016-09-14 | 2017-02-22 | 华北电力大学 | Non-immersive liquid-level measurement sensor and installation and application method thereof |
| CN106500800A (en) * | 2016-09-27 | 2017-03-15 | 华北电力大学 | A kind of closed vessel liquid level measuring method based on supersonic guide-wave |
| CN106876574A (en) * | 2017-03-03 | 2017-06-20 | 合肥工业大学 | A kind of array piezoelectric transformer |
| CN108358634A (en) * | 2018-01-19 | 2018-08-03 | 淮阴工学院 | Textured piezoelectric ceramic material and preparation method thereof |
| CN109400153A (en) * | 2018-10-11 | 2019-03-01 | 北京工业大学 | It is a kind of to collect the quaternary series ceramic material with high transducing coefficient and preparation applied to piezoelectric energy |
| CN113964266A (en) * | 2021-10-13 | 2022-01-21 | 中国科学院光电技术研究所 | Method for preparing high-performance bismuth-based lead-free piezoelectric actuator |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001223408A (en) * | 1999-11-30 | 2001-08-17 | Kyocera Corp | Piezoelectric transformer and converter |
| CN1574408A (en) * | 2003-05-21 | 2005-02-02 | 川铁矿业株式会社 | Piezoelectric single crystal device and fabrication method thereof |
| US20130134838A1 (en) * | 2011-11-28 | 2013-05-30 | Qualcomm Mems Technologies, Inc. | Piezoelectric mems transformer |
| US8894765B1 (en) * | 2009-11-13 | 2014-11-25 | Trs Technologies, Inc. | High polarization energy storage materials using oriented single crystals |
| CN104419984A (en) * | 2013-09-10 | 2015-03-18 | 中国科学院上海硅酸盐研究所 | Preparation method of perovskite-structure relaxor ferroelectric single crystal lead indium niobate-lead magnesium niobate-lead titanate |
| CN104993045A (en) * | 2015-05-31 | 2015-10-21 | 上海交通大学 | Piezoelectric transformer based on single crystal surface cutting mode |
-
2015
- 2015-10-29 CN CN201510725277.5A patent/CN105405959B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001223408A (en) * | 1999-11-30 | 2001-08-17 | Kyocera Corp | Piezoelectric transformer and converter |
| CN1574408A (en) * | 2003-05-21 | 2005-02-02 | 川铁矿业株式会社 | Piezoelectric single crystal device and fabrication method thereof |
| US8894765B1 (en) * | 2009-11-13 | 2014-11-25 | Trs Technologies, Inc. | High polarization energy storage materials using oriented single crystals |
| US20130134838A1 (en) * | 2011-11-28 | 2013-05-30 | Qualcomm Mems Technologies, Inc. | Piezoelectric mems transformer |
| CN104419984A (en) * | 2013-09-10 | 2015-03-18 | 中国科学院上海硅酸盐研究所 | Preparation method of perovskite-structure relaxor ferroelectric single crystal lead indium niobate-lead magnesium niobate-lead titanate |
| CN104993045A (en) * | 2015-05-31 | 2015-10-21 | 上海交通大学 | Piezoelectric transformer based on single crystal surface cutting mode |
Non-Patent Citations (2)
| Title |
|---|
| C E SUN等: "Elastic, dielectric, and piezoelectric constants of Pb ( In 1/2 Nb 1/2 ) O 3 – Pb ( Mg 1/3 Nb 2/3 ) O 3 – PbTiO 3 single crystal poled along [011]", 《APPLIED PHYSICS LETTERS》 * |
| JIASHI YANG: "Piezoelectric Transformer Structural Modeling—A Review", 《IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106441509A (en) * | 2016-09-14 | 2017-02-22 | 华北电力大学 | Non-immersive liquid-level measurement sensor and installation and application method thereof |
| CN106500800A (en) * | 2016-09-27 | 2017-03-15 | 华北电力大学 | A kind of closed vessel liquid level measuring method based on supersonic guide-wave |
| CN106876574A (en) * | 2017-03-03 | 2017-06-20 | 合肥工业大学 | A kind of array piezoelectric transformer |
| CN106876574B (en) * | 2017-03-03 | 2019-05-17 | 合肥工业大学 | A kind of array piezoelectric transformer |
| CN108358634A (en) * | 2018-01-19 | 2018-08-03 | 淮阴工学院 | Textured piezoelectric ceramic material and preparation method thereof |
| CN109400153A (en) * | 2018-10-11 | 2019-03-01 | 北京工业大学 | It is a kind of to collect the quaternary series ceramic material with high transducing coefficient and preparation applied to piezoelectric energy |
| CN109400153B (en) * | 2018-10-11 | 2021-05-25 | 北京工业大学 | Quaternary ceramic material with high transduction coefficient applied to piezoelectric energy collection and preparation |
| CN113964266A (en) * | 2021-10-13 | 2022-01-21 | 中国科学院光电技术研究所 | Method for preparing high-performance bismuth-based lead-free piezoelectric actuator |
| CN113964266B (en) * | 2021-10-13 | 2023-09-19 | 中国科学院光电技术研究所 | Method for preparing high-performance bismuth-based leadless piezoelectric driver |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105405959B (en) | 2018-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105405959A (en) | Ternary system relaxation ferroelectric monocrystal piezoelectric transformer having high power density | |
| KR100707949B1 (en) | Film speaker using 0-3 type piezoelectric composite and method of producing the same | |
| JP2023110020A (en) | High-voltage tunable multilayer capacitor | |
| US20150028726A1 (en) | Piezoelectric sheet, piezoelectric device including the same, and method of fabricating piezoelectric device | |
| Du et al. | High-power, multioutput piezoelectric transformers operating at the thickness-shear vibration mode | |
| US20140266144A1 (en) | On-chip power converter circuit and on-chip power supply using the power converter circuit | |
| CN104882277B (en) | The method of the controllable electric capacity of layered composite structure and piezoelectric stress regulation and control dielectric | |
| JP5313904B2 (en) | Method for polarization treatment of laminated piezoelectric / electrostrictive element | |
| JP3706509B2 (en) | Piezoelectric transformer | |
| JPH08330643A (en) | Piezoelectric transformer and its manufacture | |
| JP5011887B2 (en) | Method of polarization of laminated piezoelectric element | |
| KR20010102673A (en) | Piezoelectric ceramic material with large power output ability and transformer made of it | |
| CN105645957B (en) | A kind of high mechanical-electric coupling performance lead zirconate titanate fine grain piezoelectric ceramics and preparation method thereof | |
| DE102015117106A1 (en) | Piezoelectric transformer | |
| CN105185899A (en) | Preparation method of piezoelectric ceramic polymer composite material | |
| Wang et al. | Multilayer Rosen-type piezoelectric transformer prepared with Pb (Mg1/3Nb2/3) O3–PbTiO3 single crystal | |
| JPH10241993A (en) | Laminated ceramic electronic component | |
| JP2014072357A (en) | Laminated piezoelectric element | |
| JP3673433B2 (en) | Piezoelectric transformer | |
| JPH05251785A (en) | Manufacture of thickness-wise vibration piezoelectric-porcelain transformer and manufacture thereof | |
| CN203668249U (en) | PZT piezoelectric ceramic slice high-voltage polarization device | |
| JP4721540B2 (en) | Piezoelectric transformer and power supply device | |
| JPH05235432A (en) | Thickness longitudinal vibration piezoelectric porcelain transformer and driving method therefor | |
| JP3709114B2 (en) | Piezoelectric transformer | |
| EP1672710B1 (en) | Piezoelectric transformer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |