CN105405931A - Solar cell and production method thereof - Google Patents
Solar cell and production method thereof Download PDFInfo
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- CN105405931A CN105405931A CN201510984824.1A CN201510984824A CN105405931A CN 105405931 A CN105405931 A CN 105405931A CN 201510984824 A CN201510984824 A CN 201510984824A CN 105405931 A CN105405931 A CN 105405931A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 83
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 238000001020 plasma etching Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000002355 dual-layer Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a solar cell and a production method thereof. The method comprises the steps of cleaning a polycrystalline silicon wafer; performing diffusion on the polycrystalline silicon wafer for the first time to form a first diffusion layer; etching the first diffusion layer for the first time, to allow the first diffusion layer to have a first pit depth; etching the first diffusion layer by reactive ions to form an etched layer; and performing diffusion on the etched layer for the second time to form a second diffusion layer, wherein the second diffusion layer has a second pit depth more than the first pit depth. According to the solar cell and the production method thereof provided by the invention, the textured structure of the cell can be changed, the depth of the pit in the surface can be increased, the absorption of sunlight can be enhanced, the loss of reflected light caused by the smooth and level textured surface of the cell can be reduced, the optical path of incident light in the cell can be increased, the reflection times can be improved, and thereby the short-circuit current and open-circuit voltage of the cell are improved, and the conversion efficiency of the cell is enhanced.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, particularly relate to a kind of solar cell and preparation method thereof.
Background technology
Solar energy is a kind of new forms of energy greatly developed both at home and abroad at present, and it utilizes solar cell to absorb solar energy, is converted into electric energy, has very large potentiality and future carrys out alternative traditional energy.In various solar cell, silica-based solar cell has accounted for 90% of the total share in market, but, higher production cost and poor efficiency are the factors of puzzlement silicon based cells development always, therefore, the transformation efficiency and the reduction production cost that improve solar cell are the huge challenge of restriction faced by industry.
When solar irradiation is mapped to battery surface, part photon irradiation to surface metal electrode is reflected, this part is inevitable, and another part photon irradiation is on the silicon substrate of battery, some of them are absorbed, and other can fall because matte is smooth in reflection loss, therefore, the method improving battery conversion efficiency is exactly improve a suede structure for solar cell, to reduce the reflection loss of incident light.
In prior art, RIE (ReactiveIonEtching, reactive ion etching) technology can by changing cell knap surface structure, reduce the conversion efficiency incident light loss of battery being improved to battery, but, the hole, suede structure hole utilizing this technology to prepare is more shallow, and be easily worn in the process of producing or erode, anti-reflective effect is not good.
Summary of the invention
For solving the problem, the invention provides a kind of solar cell and preparation method thereof, cell knap surface structure can be changed, increase the pit depth on surface, strengthen the absorption to sunlight, reduce because battery pile face smooth surface is smooth and make reflection optical losses, increase the light path of incident light inside battery, improve order of reflection, thus improve short circuit current and the open circuit voltage of battery, thus improve the conversion efficiency of battery.
The manufacture method of a kind of solar cell provided by the invention, comprising:
Cleaning polysilicon chip;
First time diffusion is carried out to described polysilicon chip, forms the first diffusion layer;
First time etching is carried out to described first diffusion layer, makes described first diffusion layer have the first pit depth;
Reactive ion etching is carried out to described first diffusion layer, forms etch layer;
Carry out second time diffusion to described etch layer, form the second diffusion layer, described second diffusion layer has the second pit depth being greater than described first pit depth.
Preferably, in the manufacture method of above-mentioned solar cell, described described etch layer carried out to second time diffusion after, also comprise:
Second time etching is carried out to the back side of described polysilicon chip, removes phosphorosilicate glass.
Preferably, in the manufacture method of above-mentioned solar cell, after described removal phosphorosilicate glass, also comprise:
PECVD mode is utilized to deposit dual layer nitride silicon fiml on the surface of described second diffusion layer.
Preferably, in the manufacture method of above-mentioned solar cell, after described deposition dual layer nitride silicon fiml, also comprise:
Printing back electrode is also dried, then forms back of the body electric field and dry.
Preferably, in the manufacture method of above-mentioned solar cell, after described formation back of the body electric field is also dried, also comprise:
Print positive electrode also sinters.
A kind of solar cell provided by the invention, comprising:
Polysilicon chip;
The upper surface of described polysilicon chip is provided with first diffusion layer with the first pit depth;
The upper surface of described first diffusion layer is provided with etch layer;
The upper surface of described etch layer is provided with second diffusion layer with the second pit depth, and described second pit depth is greater than described first pit depth.
Preferably, in above-mentioned solar cell, the upper surface of described second diffusion layer is provided with dual layer nitride silicon fiml.
Preferably, in above-mentioned solar cell, the upper surface of described dual layer nitride silicon fiml is provided with positive electrode.
Preferably, in above-mentioned solar cell, the back side of described polysilicon chip is provided with back electrode.
Preferably, in above-mentioned solar cell, the back side of described polysilicon chip is also provided with back of the body electric field.
Above-mentioned solar cell provided by the invention and preparation method thereof, wherein, the method comprises: first clean polysilicon chip; Then first time diffusion is carried out to described polysilicon chip, form the first diffusion layer; Again first time etching is carried out to described first diffusion layer, make described first diffusion layer have the first pit depth; Again reactive ion etching is carried out to described first diffusion layer, form etch layer; Finally carry out second time diffusion to described etch layer, form the second diffusion layer, described second diffusion layer has the second pit depth being greater than described first pit depth.Due to the step adding first time diffusion and etch for the first time before reactive ion etching, therefore, it is possible to increase the pit depth of the final matte formed, strengthen the absorption to sunlight, reduce and make reflection optical losses because battery pile face smooth surface is smooth, increase the light path of incident light inside battery, improve order of reflection, thus improve short circuit current and the open circuit voltage of battery, thus improve the conversion efficiency of battery.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The schematic diagram of the manufacture method of the first solar cell that Fig. 1 provides for the embodiment of the present application;
The schematic diagram of the manufacture method of the second solar cell that Fig. 2 provides for the embodiment of the present application;
The schematic diagram of a kind of solar cell that Fig. 3 provides for the embodiment of the present application.
Embodiment
Core concept of the present invention is to provide a kind of solar cell and preparation method thereof, to change cell knap surface structure, increase the pit depth on surface, strengthen the absorption to sunlight, reduce and make reflection optical losses because battery pile face smooth surface is smooth, increase the light path of incident light inside battery, improve order of reflection, thus improve short circuit current and the open circuit voltage of battery, improve the conversion efficiency of battery.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The manufacture method of the first solar cell that the embodiment of the present application provides as shown in Figure 1, the schematic diagram of the manufacture method of the first solar cell that Fig. 1 provides for the embodiment of the present application.The method comprises the steps:
S1: cleaning polysilicon chip;
In this step, selecting suitable polysilicon and after cleaning, carrying out front cleaning and texturing, surface damage layer is removed.
S2: first time diffusion is carried out to described polysilicon chip, forms the first diffusion layer;
This step is the step increased on the basis of existing technology, namely before first time etches, first carry out first time diffusion, this makes it possible to be formed first diffusion layer with certain concavo-convex degree, and follow-up first time etch step is carried out on this first diffusion layer, the etch layer obtained will have larger concavo-convex degree, thus strengthens the absorption to sunlight.
S3: first time etching is carried out to described first diffusion layer, makes described first diffusion layer have the first pit depth;
In this step, be based on the first diffusion layer, carry out first time etching, and above-mentioned first diffusion layer has inherently possessed certain concavo-convex degree, after the step therefore etched in described first time, can strengthen this concavo-convex degree.
S4: carry out reactive ion etching to described first diffusion layer, forms etch layer;
What this step adopted is existing equipment and technology, after reactive ion etching (RIE), forms the etch layer that concavo-convex degree is larger.
S5: carry out second time diffusion to described etch layer, form the second diffusion layer, described second diffusion layer has the second pit depth being greater than described first pit depth.
In this step, owing to carrying out on first time the first diffusion layer of diffuseing to form, therefore after twice diffusion, the concavo-convex degree on the surface formed than One Diffusion Process technology of the prior art is larger, has the performance better absorbing sunlight.
The above-mentioned method for manufacturing solar battery that the embodiment of the present application provides, due to the step adding first time diffusion and etch for the first time before reactive ion etching, therefore, it is possible to increase the pit depth of the final matte formed, strengthen the absorption to sunlight, reduce and make reflection optical losses because battery pile face smooth surface is smooth, increase the light path of incident light inside battery, improve order of reflection, thus improve short circuit current and the open circuit voltage of battery, thus improve the conversion efficiency of battery.
As another preferred embodiment, after the step S5 of the manufacture method of the first solar cell above-mentioned, can also comprise the steps:
S6: second time etching is carried out to the back side of described polysilicon chip, removes phosphorosilicate glass.
In this step, after removing phosphorosilicate glass, just can effectively avoid causing harmful effect in subsequent step, it should be noted that, this embodiment is only a preferred embodiment, in fact, if do not have this step also can't affect enforcement in the manufacture method of the first solar cell above-mentioned.
Further, after above-mentioned steps S6, can also comprise the steps:
S7: utilize PECVD mode to deposit dual layer nitride silicon fiml on the surface of described second diffusion layer.
Utilize this step that solar cell can be made to have excellent reflection preventing ability, thus make it utilize more solar energy to carry out opto-electronic conversion, to improve the conversion efficiency of battery, it should be noted that, this step is also only a preferred steps in the manufacture method of the first solar cell above-mentioned, if do not have this step also can't affect the realization of the method.
Further, after above-mentioned steps S7, can also comprise the steps:
S8: printing back electrode is also dried, then forms back of the body electric field and dry.
The back electrode utilizing this step to be formed and back of the body electric field, can ensure that this solar cell is effectively collected sunlight and utilizes, improve photoelectric conversion efficiency.It should be noted that, this step is also a preferred version, if do not have this step also can not affect the realization of the manufacture method of the first solar cell above-mentioned.
In addition, after above-mentioned steps S8, can also comprise the steps:
S9: print positive electrode also sinters.
Utilize this step to complete positive electrode, and it have excellent electric conductivity to utilize sintering process to ensure.This step is also a preferred version, if do not have this step also can not affect the realization of the manufacture method of the first solar cell above-mentioned.
Below the manufacture method of the second solar cell that the embodiment of the present application provides is described.
The manufacture method of the second solar cell that the embodiment of the present application provides as shown in Figure 2, the schematic diagram of the manufacture method of the second solar cell that Fig. 2 provides for the embodiment of the present application.The method comprises the steps:
A1: cleaning polysilicon chip;
In this step, selecting suitable polysilicon and after cleaning, carrying out front cleaning and texturing, surface damage layer is removed.
A2: first time diffusion is carried out to described polysilicon chip, forms the first diffusion layer;
In this step, the sheet resistance scope of the first diffusion layer of formation is between 40 ohm to 50 ohm.
A3: first time etching is carried out to described first diffusion layer, makes described first diffusion layer have the first pit depth;
In this step, first time etches and makes the surface of the first diffusion layer more concavo-convex.
A4: carry out reactive ion etching to described first diffusion layer, forms etch layer;
After reactive ion etching (RIE), need to clean, repair matte.
A5: carry out second time diffusion to described etch layer, form the second diffusion layer, described second diffusion layer has the second pit depth being greater than described first pit depth;
In this step, the sheet resistance scope of the second diffusion layer of formation can between 70 ohm to 80 ohm.
A6: second time etching is carried out to the back side of described polysilicon chip, removes phosphorosilicate glass;
A7: utilize PECVD mode to deposit dual layer nitride silicon fiml on the surface of described second diffusion layer;
A8: printing back electrode is also dried, then forms back of the body electric field and dry;
A9: print positive electrode also sinters.
The manufacture method of above-mentioned solar cell, on the basis of RIE battery, hole, battery pile face hole do darker, increase the absorption to photon, deepen the reflection path of photon, compatible strong, be applicable to large-scale production.
A kind of solar cell that the embodiment of the present application provides as shown in Figure 3, the schematic diagram of a kind of solar cell that Fig. 3 provides for the embodiment of the present application.This solar cell comprises:
Polysilicon chip 1;
The upper surface of described polysilicon chip 1 is provided with the first diffusion layer 2, described first diffusion layer 2 has the upper surface with the first pit depth through first time etching formation, this structure is the difference of the present embodiment relative to solar cell of the prior art, first time is utilized to diffuse to form described first diffusion layer 2, the surface of this first diffusion layer 2 inherently has certain concavo-convex degree, this concavo-convex degree can be improved again again after first time etches, to strengthen the absorption to sunlight, reduce and make reflection optical losses because battery pile face smooth surface is smooth, increase the light path of incident light inside battery, improve order of reflection,
The upper surface of described first diffusion layer 2 is provided with the etch layer 3 formed through reactive ion etching;
The upper surface of described etch layer 3 is provided with second diffusion layer 4 with the second pit depth, described second pit depth is greater than described first pit depth, because the pit utilizing the first diffusion layer to be formed does basis, therefore this second diffusion layer 4 has darker pit relative to the diffusion layer in technology before, thus the absorption strengthened photon, deepen the reflection path of photon.
Known by foregoing description, the hole, matte hole of the above-mentioned solar cell that the embodiment of the present application provides is darker, the absorption to sunlight can be strengthened, reduce and make reflection optical losses because battery pile face smooth surface is smooth, increase the light path of incident light inside battery, improve order of reflection, thus improve short circuit current and the open circuit voltage of battery, thus improve the conversion efficiency of battery.
Continue with reference to figure 3, in above-mentioned solar cell, the upper surface of described second diffusion layer 4 can be provided with dual layer nitride silicon fiml 5, this makes it possible to utilize more fully the sunlight being radiated at surface to carry out opto-electronic conversion.
And the upper surface of described dual layer nitride silicon fiml 5 is provided with positive electrode 6; The back side of described polysilicon chip is provided with back electrode (not shown); The back side of described polysilicon chip 1 is also provided with back of the body electric field 7.In addition, P+ layer 8 can also be provided with between back of the body electric field 7 and polysilicon chip 1.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a manufacture method for solar cell, is characterized in that, comprising:
Cleaning polysilicon chip;
First time diffusion is carried out to described polysilicon chip, forms the first diffusion layer;
First time etching is carried out to described first diffusion layer, makes described first diffusion layer have the first pit depth;
Reactive ion etching is carried out to described first diffusion layer, forms etch layer;
Carry out second time diffusion to described etch layer, form the second diffusion layer, described second diffusion layer has the second pit depth being greater than described first pit depth.
2. the manufacture method of solar cell according to claim 1, is characterized in that, described described etch layer carried out to second time diffusion after, also comprise:
Second time etching is carried out to the back side of described polysilicon chip, removes phosphorosilicate glass.
3. the manufacture method of solar cell according to claim 2, is characterized in that, after described removal phosphorosilicate glass, also comprises:
PECVD mode is utilized to deposit dual layer nitride silicon fiml on the surface of described second diffusion layer.
4. the manufacture method of solar cell according to claim 3, is characterized in that, after described deposition dual layer nitride silicon fiml, also comprises:
Printing back electrode is also dried, then forms back of the body electric field and dry.
5. the manufacture method of solar cell according to claim 4, is characterized in that,
After described formation back of the body electric field is also dried, also comprise:
Print positive electrode also sinters.
6. a solar cell, is characterized in that, comprising:
Polysilicon chip;
The upper surface of described polysilicon chip is provided with first diffusion layer with the first pit depth;
The upper surface of described first diffusion layer is provided with etch layer;
The upper surface of described etch layer is provided with second diffusion layer with the second pit depth, and described second pit depth is greater than described first pit depth.
7. solar cell according to claim 6, is characterized in that, the upper surface of described second diffusion layer is provided with dual layer nitride silicon fiml.
8. solar cell according to claim 7, is characterized in that, the upper surface of described dual layer nitride silicon fiml is provided with positive electrode.
9. solar cell according to claim 8, is characterized in that, the back side of described polysilicon chip is provided with back electrode.
10. solar cell according to claim 9, is characterized in that, the back side of described polysilicon chip is also provided with back of the body electric field.
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| CN201510984824.1A CN105405931A (en) | 2015-12-23 | 2015-12-23 | Solar cell and production method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108074999A (en) * | 2016-11-16 | 2018-05-25 | 镇江大全太阳能有限公司 | A kind of black silion cell of selective emitter and preparation method thereof |
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| CN108074999A (en) * | 2016-11-16 | 2018-05-25 | 镇江大全太阳能有限公司 | A kind of black silion cell of selective emitter and preparation method thereof |
| CN111081797A (en) * | 2019-12-31 | 2020-04-28 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| CN111081797B (en) * | 2019-12-31 | 2021-04-27 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
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