CN105405735B - The monitoring method of plasma processing apparatus and plasma-treating technology - Google Patents
The monitoring method of plasma processing apparatus and plasma-treating technology Download PDFInfo
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- CN105405735B CN105405735B CN201410417654.4A CN201410417654A CN105405735B CN 105405735 B CN105405735 B CN 105405735B CN 201410417654 A CN201410417654 A CN 201410417654A CN 105405735 B CN105405735 B CN 105405735B
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Abstract
The invention discloses a kind of plasma processing apparatus, including processing chamber housing, the pedestal of carrying substrates and the gas spray of input reacting gas are provided with processing chamber housing.The window of multiple permeable plasma optical emissions is formed on the different height of processing chamber housing side wall and at least includes the first and second windows.First window has the corresponding with substrate position first height, and the second window has the second height more than the first height.The second light intensity signal is obtained in the plasma optical emission that endpoint monitoring unit is passed through from the second window, the first light intensity signal corresponding with reactant concentration or by-product concentration is obtained from the plasma optical emission that first window is passed through, to the first and second light intensity signal computings with offset the first light intensity signal and the second light intensity signal that external disturbance is caused shake and according to operation result detect plasma-treating technology terminal, so as to eliminate the influence that external disturbance is judged process endpoint, the accuracy of endpoint monitoring is improved.
Description
Technical field
The present invention relates to semiconductor processing equipment, more particularly to a kind of plasma processing apparatus and applied to the device
Plasma-treating technology monitoring method.
Background technology
Implement defined processing to the substrate (such as semiconductor wafer) as handled object using plasma wide
It is general to be applied in semiconductor fabrication sequence.It is used as feature sizes of semiconductor devices reduces, and in semiconductor fabrication
The quantity of plasma-treating technology step and increasing sharply for complexity, plasma handling process control requirement become
Obtain stricter, this is accomplished by the critical stage that technical process is controlled using the means monitored in real time.
It is when the dielectric layer that be etched in etching process, the problem of a key by taking plasma etch process as an example
Plasma etching should be stopped after being etched away in time, to avoid underlying dielectric layers from being damaged by the etching of plasma
Cause the failure of device.Therefore, it is accurate judge plasma etch process terminal (endpoint) to avoid because etching is not enough or
Etching excessively just becomes particularly important.In the prior art generally using optical emission spectroscopy (optical emission
Spectroscopy, OES) carry out plasma etching endpoint monitoring.OES technologies are mainly based upon online light spectrum detecting apparatus pair
The spectrum that plasma emission goes out is detected, obvious change occurs due to etching into different material layer spectrum, especially works as
When arrival is etching terminal, this change is showed by the Strength Changes of OES spectral signals.Therefore, detection etch is passed through
During when etching into the material of different layers reactant or product spectral line of emission intensity level, etching is just can interpolate that with this eventually
Point.
Fig. 1 show a kind of plasma etching apparatus of prior art, and it includes a processing chamber housing 11, in processing chamber housing
It is interior, Top electrode is arranged on chamber roof and is introduced into from reacting gas source 12 in the gas spray 113 of reacting gas, by bottom electrode
In the electrostatic chuck 112 that clamping substrate W is set.By the way that radio frequency source 13 is applied on the bottom electrode, to form rf electric field to anti-
Gas ionization is answered to generate plasma.Optical transmission window 114 is provided with the side wall of processing chamber housing, produced by for making in chamber
The light radiation of plasma is passed through.As shown in Fig. 2 the plasma light that endpoint monitoring unit 14 is transmitted according to optical transmission window 114
Radiation obtains the light intensity signal of specific wavelength light corresponding with etching reactant or etch by-products, and with t0Moment obtains
Light intensity signal I=F (t0) on the basis of intensity, as the difference F of the light intensity signal F (t) and the reference intensity at a certain moment
(t)-F(t0) when exceeding given threshold, endpoint monitoring unit 14 judges that etching technics is reached home, and sends corresponding detection and believe
Number.However, due to endpoint monitoring unit calculating and the action such as compare and be all based on optical transmission window in different time (t0Moment and
T) the light wave intensity that is passed through, this will produce problems with：The interference of any outside in technical process, such as gas stream
Measure, RF input power, the change of gas pressure etc. can all cause the A in the shake of the luminous intensity of plasma, such as Fig. 2
Place, and the false triggering that on the one hand etching terminal easily occurs for the shake of this luminescence of plasma intensity causes etching not enough, separately
If on the one hand external disturbance and etching terminal occur simultaneously, the change of script plasma light intensity is easily disturbed signal institute
Covering or offset and can not grab etching terminal causes etching injury.
Accordingly, it is desirable to provide the monitoring method of a kind of plasma processing apparatus and plasma-treating technology is to improve
Drawbacks described above.
The content of the invention
It is a primary object of the present invention to overcome the defect of prior art there is provided one kind can accurately grab plasma
The device and process-monitor method of handling process terminal.
To reach above-mentioned purpose, the present invention provides a kind of plasma processing apparatus, including processing chamber housing and radio frequency source.Place
The bottom of reason chamber is provided with to be used to input into the processing chamber housing provided with the pedestal for carrying pending substrate, top reacts
The gas spray of gas；Radio frequency source is used to ionize to generate plasma by the reacting gas in the processing chamber housing.Deng from
Daughter processing unit also includes the window and endpoint monitoring unit of multiple permeable plasma optical emissions.Multiple windows are formed at
At the different height of processing chamber housing side wall and at least including first window and the second window, the first window has and institute
The first corresponding height of the position of substrate is stated, second window has the second height more than first height.Terminal
Monitoring unit obtains the second light intensity signal and from by described from the plasma optical emission passed through by second window
The first light intensity signal is obtained in the plasma optical emission that one window is passed through, by first light intensity signal and second light
Strong signal operation is with by as described the caused by the external interference signals unrelated with the reactions change of plasma-treating technology
The shake of one light intensity signal and the second light intensity signal is offseted, and detects the plasma-treating technology according to operation result
Terminal, wherein first light intensity signal is corresponding with the reactant concentration or by-product concentration of the plasma-treating technology.
Preferably, the endpoint monitoring unit includes filter element, optical signal conversion unit and analytic unit.The filtering
Unit is used to extract the first light from the plasma optical emission passed through by the first window and from by second window
The second light is extracted in the plasma optical emission that mouth is passed through, wherein first light and the plasma-treating technology
Reactant or accessory substance are associated；The optical signal conversion unit is used in real time be converted to first light and the second light
Corresponding electric signal；The analytic unit is used to obtain institute according to the electric signal of first light and the electric signal of the second light
State the first light intensity signal and second light intensity signal and set up object function Y=F (f (t), g (t)), according to the object function
Detect the terminal of the plasma-treating technology and export detection signal, wherein f (t) is first light intensity signal, g (t)
For second light intensity signal, the object function is and the incoherent function of the external interference signals.
Preferably, the analytic unit include processing module, setting module and judge module, the processing module be used for pair
The electric signal of first light and the second light is processed to form first light intensity signal and the second light intensity signal to expand this
The difference of the electric signal of first light and the second light；Setting module, according to first light intensity signal and the second light intensity signal
Set up the object function；The judge module determines that the plasma-treating technology is reached home according to the object function
And export the detection signal.
Preferably, the endpoint monitoring unit also includes control unit, and it controls the processing according to the detection signal
Process conditions in chamber.
Preferably, second light is associated with the reactant or accessory substance of the plasma-treating technology or not phase
Association.
Preferably, the plasma processing apparatus also include horizontal arrangement in the gas spray and the substrate it
Between, barrier assembly for from the plasma passing through optionally free radical；Second window is located at described
Above barrier assembly, the first window is located at below the barrier assembly.
Preferably, the first window is located at 0-100mm above the substrate；Second window is located on the substrate
Square 10mm-500mm.
Present invention also offers a kind of monitoring of the plasma-treating technology applied to above-mentioned plasma processing apparatus
Method, the plasma processing apparatus includes processing chamber housing and radio frequency source, and the processing chamber housing bottom, which is provided with, to be used to carry pending
The pedestal of substrate, top are provided with the gas spray for being used for that reacting gas to be inputted into the processing chamber housing, and the radio frequency source is used for
Reacting gas in the processing chamber housing is ionized to generate plasma；Wherein, the different height of processing chamber housing side wall
Place forms the window for the multiple permeable plasma optical emissions at least including first window and the second window, the first window
With the corresponding with the position of the substrate first height, second window second with more than first height is high
Degree；Selectively horizontal arrangement one is located between the first window and the second window, is used for the plasma processing apparatus
The barrier assembly for from the plasma passing through optionally free radical.The monitoring method comprises the following steps：
S1：The first light intensity signal is obtained in the plasma optical emission passed through from the first window and from described second
The second light intensity signal, first light intensity signal and the corona treatment are obtained in the plasma optical emission that window is passed through
Reactant concentration or the by-product concentration correspondence of technique；
S2：By first light intensity signal and the second light intensity signal computing with will by with the corona treatment work
The shake phase of first light intensity signal and the second light intensity signal caused by the unrelated external interference signals of the reactions change of skill
Offset, and according to the terminal of the operation result detection plasma-treating technology.
Preferably, step S1 includes：
S11：The first light is extracted from the light radiation of the plasma passed through by the first window and from by described
The second light is extracted in the light radiation for the plasma that second window is passed through, wherein first light and corona treatment work
The reactant or accessory substance of skill are associated；
S12：First light and the second light are converted into corresponding electric signal in real time；And
S13：The electric signal of first light and the second light is processed to form first light intensity signal and respectively
Two light intensity signals are to expand the difference of the electric signal of first light and the second light.
Preferably, step S2 includes：
S21：Object function Y=F (f (t), g (t)) is set up according to first light intensity signal and the second light intensity signal, its
Middle f (t) is first light intensity signal, and g (t) is second light intensity signal, and the object function is and the external disturbance
The incoherent function of signal；And
S22：The terminal of the plasma-treating technology is detected according to the object function and detection signal is exported.
Preferably, the monitoring method of the plasma-treating technology also includes：
S3：Technique bar according to the endpoint monitoring output control of the plasma-treating technology in processing chamber housing
Part.
Preferably, second light is associated or unconnected to the etching reactant or etch product.
The beneficial effects of the present invention are obtain the by the plasma optical emission from the second window away from substrate
Two light intensity signals obtain reference signal, are obtained and reactant by the plasma optical emission from the first window close to substrate
Or corresponding first light intensity signal of accessory substance, terminal prison is carried out according to the operation result of the first light intensity signal and the second light intensity signal
Survey, when the plasma produced in processing chamber housing is by external disturbance (changes of such as process conditions), due to first and second
Light intensity signal is influenceed by the external disturbance simultaneously, and the interference is offset after both computings, so as to avoid because outside is dry
The erroneous judgement of the plasma-treating technology terminal caused is disturbed, and then improves the accuracy of endpoint monitoring.
Brief description of the drawings
Fig. 1 is the schematic diagram of plasma processing apparatus in the prior art；
Fig. 2 is used for the light intensity signal spectral line schematic diagram of endpoint monitoring for plasma-treating technology in the prior art；
Fig. 3 is the schematic diagram of the plasma processing apparatus of one embodiment of the invention；
Fig. 4 is the block diagram of the endpoint monitoring unit of the plasma processing apparatus of one embodiment of the invention；
Fig. 5 illustrates for the light intensity signal spectral line that the plasma-treating technology of one embodiment of the invention is used for endpoint monitoring
Figure；
Fig. 6 is the schematic diagram of the plasma processing apparatus of another embodiment of the present invention；
Fig. 7 is the flow chart of the monitoring method of the plasma-treating technology of one embodiment of the invention.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Fig. 3 shows the plasma treatment appts that one embodiment of the present invention is provided.It should be understood that it is only example
Property, less or more element can be included, or the arrangement of the element may be different from shown in Fig. 3.
The plasma processing apparatus of the present embodiment includes processing chamber housing 31, and the top of the processing chamber housing 31 is provided with reaction
Gas spray 313, reacting gas spray head 313 includes flat Top electrode；The bottom of processing chamber housing 31 is provided with for pressing from both sides
Pending substrate W pedestal 312 is held, the pending substrate W can treat the semiconductor chip that to etch or process or treat will
The glass plate of flat-panel monitor is processed into, the pedestal can be sight spot chuck.It is provided with pedestal 312 parallel with Top electrode
Flat bottom electrode.Bottom electrode is connected with radio frequency source 32.Radio frequency source 32 applies on the bottom electrode so that shape between upper/lower electrode
Into the rf electric field of vertical direction, so that reacting gas be ionized to generate plasma.The corona treatment of the present embodiment
Device is capacitively coupled, and inductive type processing unit can also be used in other embodiments, and the present invention is not limited
System.
The window of multiple permeable plasma optical emissions is formed on the different height position of the side wall 311 of processing chamber housing 31
Mouthful, these windows can make the radiative transfer of processing chamber chamber piasma to exterior thereto.These windows at least include first
Window and the second window, wherein first window have first height corresponding with substrate W position, and the second window, which has, to be more than
Second height of the first height.In present embodiment so that the window that can pass through plasma optical emission is 2 as an example, first window
314a formation position highly corresponding with substrate W on the wall of side, preferably first window 314a is located at 0-100mm above substrate W,
Second window 314b is located at substrate top 10mm-500mm and higher than first window 314a.As for these windows in processing chamber housing side
Position relationship in wall circumference, the present invention is not any limitation as, and can be along side wall week at the position of the sustained height of side wall 311
To the multiple windows of formation.
Endpoint monitoring unit 33 receives the plasma optical emission from first window 314a and the second window 314b transmission, from
The first light intensity signal is obtained in the plasma optical emission passed through by first window 314a, is passed through from by the second window 314b
Plasma optical emission in obtain the second light intensity signal.Endpoint monitoring unit 33 using the second light intensity signal as reference signal,
Using the first light intensity signal as reaction signal, computing is carried out to reaction signal and the reference signal, and examine according to operation result
Survey the terminal of plasma-treating technology.Here the first light intensity signal is the reactant concentration or pair of plasma-treating technology
Production concentration is corresponding, therefore the influence of the first light intensity signal intensity subject plasma handling process reaction is very big.Second light
Strong signal will be less than the first light intensity signal for the sensitiveness of plasma-treating technology reactions change.On the other hand, generation is worked as
External interference signals (such as gas flow, RF input power, the gas unrelated with plasma-treating technology reactions change itself
The change of the process conditions such as pressure) when, the external interference signals are acted on by first window 314a and the second window 314b simultaneously
The plasma optical emission of transmission, therefore related light intensity signal also can all respond to the external interference signals, and to the
The computing of one light intensity signal and the second light intensity signal then just can be by both signal jitter phases caused by external interference signals
Offset, therefore obtained operation result will not be shaken because of external interference signals.It should be noted that to avoid really arriving
Up to reference signal during process endpoint also because signal jitter occurs for plasma-treating technology reactions change itself and then covers or supports
Disappear the shake of the first light intensity signal, and it is preferably as far as possible that the second window 314b is arranged on above first window 314a by the present invention
From first window 314a, it can so reduce the second window in influence degree of second light intensity signal by reaction itself, the present embodiment
Mouth 314b is disposed proximate to gas spray or corresponding with the position of gas spray.Consequently, it is possible to when the second light intensity signal with
When reactant concentration or corresponding by-product concentration, although its also subject plasma processing handling process reactions change influence,
Technique, which is reached home, to shake, but because the second light intensity signal comes from what the second window 314b away from substrate was transmitted
Plasma optical emission, the influence of its subject plasma processing handling process reactions change is less than the first light intensity signal, and it is believed
Number variation tendency or the jitter amplitude at process endpoint are also significantly less than the first light intensity signal, therefore according to both computing knots
The intensity curves that fruit obtains still can show obvious mutation and be detected at process endpoint.Second light intensity is believed
Number can be corresponding with the reactant concentration or by-product concentration of plasma-treating technology, it can also be not correspond to.Preferably,
Second light intensity signal is corresponding with the reactant concentration or by-product concentration of plasma-treating technology, because at substrate
When reason need to be carried out in multiple chambers, the process conditions and parameter of each chamber are often based on plasma-treating technology reaction
It is adjusted, so if the second light intensity signal is corresponding with reactant concentration or by-product concentration, is then carried out in different chamber
Its performance is also relatively stable during processing, and if is not correspond to so to be switched to other with reactant concentration or by-product concentration anti-
The stability of the second light intensity signal may be affected when answering chamber treatment.But then, it is contemplated that in single chamber more
Process endpoint is accurately judged that, the second light intensity signal can also be set as not relative with reactant concentration or by-product concentration
Should, such second light intensity signal will not be influenceed by reacting, the reference signal when plasma-treating technology is reached home
It will not shake.
Next the plasma processing apparatus and corona treatment of the present embodiment will be described in detail with reference to Fig. 4 and Fig. 5
The monitoring method of technique.Fig. 4 is refer to, endpoint monitoring unit 33 includes filter element 331, optical signal conversion unit 332 and divided
Analyse unit 333.It is collected separately from first window 314a and the second window 314b plasma optical emissions passed through single to filtering
Member 331, filter element 331 may include a wave filter that can filter out the light of specific wavelength in plasma optical emission.It is right
The plasma optical emission transmitted in first window 314a, filter element 331 therefrom extracts the first light L1, first light
L1It is associated with reactant or accessory substance, can be the single specific wavelength that reactant or accessory substance are radiated light or with it is anti-
Answer the light of thing or the related a variety of specific wavelengths of accessory substance.For example when with fluorocarbon gas etching oxidation silicon, wait from
CO is had in the accessory substance that daughter etching is produced, its corresponding spectral wavelength is 483nm, then filter element 331 can extract ripple
A length of 483nm light is the first light L1.The plasma optical emission transmitted for the second window 314b, filter element 331
Therefrom extract the second light L2, second light L2Can be and reactant or accessory substance association or unconnected light.Light
Signal conversion unit 332 is connected with filter element 331, for first light L of the real-time reception from filter element 3311With
Two light L2And carry out opto-electronic conversion it is converted to corresponding electric signal I in real time1And I2.The electric signal of first and second light
Intensity reflects the intensity of the first light and the second light at each moment, is respectively used to turn into the first light intensity signal and the second light
Strong signal.Optical signal conversion unit 332 can realize its respective function with filter element 331 by spectrometer.Analytic unit 333
It is connected with optical signal conversion unit 332, it is according to the electric signal I of the first light1With the electric signal I of the second light2Obtain as anti-
First light intensity signal f (t) of induction signal and the second light intensity signal g (t) as reference signal simultaneously sets up object function Y=F (f
(t), g (t)), the terminal of plasma-treating technology is detected according to the object function and detection signal is exported.Reaction signal f (t)
Corresponding to the electric signal I of the first light1, it can be the electric signal I of light1Itself, or to electric signal I1Processing is obtained,
Because the first light is related to reactant or accessory substance, therefore reaction signal f (t) can be understood as with being reacted in plasma
Thing or the related function of by-product concentration.Reference signal g (t) corresponds to the electric signal I of the second light2, it can be light
Electric signal I2Itself, or to electric signal I2Processing is obtained, and is related to the concentration of the second light tie substance in plasma
Function.If the second light is corresponding with reactant or accessory substance, due to away from the reactant or the concentration of accessory substance at substrate W
It is changed significantly less than the reactant near substrate W or by-product concentration change, therefore the song that reference signal g (t) is changed over time
Line will gently much compared to reaction signal f (t) curves changed over time.If the second light is corresponded to except reactant
With the material beyond accessory substance, then the material concentration does not change in itself because of the reaction of plasma-treating technology, thus joins
Examining signal g (t) is in the ideal case and reactant or the incoherent constant of by-product concentration.Object function Y is reaction signal f
(t) and reference signal g (t) function, and reaction signal and reference signal can be trembled because of the signal produced by external disturbance
It is dynamic to offset, therefore object function is and the incoherent function of external interference signals.
Further, analytic unit 333 includes processing module, setting module and judge module, and wherein processing module is to electricity
Signal I1And I2Processing forms the first light intensity signal (reaction signal) and the second light intensity signal (reference signal) to expand telecommunications respectively
Number I1And I2Difference.For example, processing module can be to electric signal I1Amplified more than 1 times of power operation and
Reaction signal f (t) is obtained, and for electric signal I2Carry out the power operation less than 1 times and obtain reference signal g to be reduced
(t).The fluctuation situation of the operation result of so two electric signals is extended, and is carried beneficial in the case of operation result fluctuation is less
High s/n ratio.Setting module is then according to the first light intensity signal I1With the second light intensity signal I2Set up object function Y=F (f (t), g
(t)).In the present embodiment, object function Y=f (t)-g (t), due to the second light intensity signal I2By reactant or by-product concentration
The influence of change is relative to the first light intensity signal I1It is smaller or even completely unaffected, therefore Y=f (t)-g (t) can also recognize
For be it is related to reactant or by-product concentration in plasma and with the incoherent function of external interference signals, and f (t)-g
(t) signal jitter as caused by external disturbance is eliminated.Judge module determines that plasma-treating technology is arrived according to object function
Up to terminal and export detection signal.Specifically, judge module can simply by current time f (t)-g (t) operation result with
Setting value compares, if for example when the first light intensity signal and reactant concentration to it is corresponding when comparative result be more than setting value, judge reaction
Thing judges to reach process endpoint because no longer consuming and concentration increase, thus.Judge module can also be to function Y=f (t)-g (t)
Computing for example draws flex point by derivation to determine process endpoint, or is combined complicated calculation using derivation, integration or a variety of computings
Method accurately to determine process endpoint, and the present invention is not any limitation as.In addition, object function Y=F (f (t), g (t)) can also be
Other in addition to subtraction combine addition subtraction multiplication and division, derivation, integration or the complicated function of a variety of computings, as long as first can be offset
Light intensity signal and the second light intensity signal because external interference signals (such as gas flow, air pressure, radio-frequency power process conditions change
Change) rather than plasma-treating technology reactions change in itself caused by signal jitter.
In the T of curve shown in Fig. 51Moment, reaction signal (the first light intensity signal) f (t) curve is shaken, and joins simultaneously
The curve for examining signal (the second light intensity signal) g (t) is also shaken, and illustrates processing chamber housing internal memory in external disturbance such as gas stream
Amount, air pressure, the change of radio-frequency power.Due to both reaction signal f (t) and reference signal g (t) operation result (the present embodiment
In be difference) eliminated external signal shake and produce mutation, therefore judge module will not judge produce technique
Terminal.If both reaction signal f (t) and reference signal g (t) operation result produces mutation, then judge module judges this
One mutation is caused in itself by plasma-treating technology reaction, will send detection signal prompt plasma-treating technology
Reach process endpoint.
Further, endpoint monitoring unit may also include the control unit (not shown) being connected with analytic unit, control
The detection signal that unit is sent in response to analytic unit, according to the process conditions in detection signal control process chamber.For example
In Bosch technique, when monitoring that etch step reaches etching terminal, analytic unit sends detection signal, control unit then root
Change the process conditions such as reacting gas type, flow and pressure to switch carry out deposition step according to detection signal.
Although above-described embodiment is the plasma processing apparatus and process-monitor for illustrating the present invention by taking two windows as an example
Method, but those skilled in the art be readily apparent that can also be set on the side wall of processing chamber housing three of different height, four
The window of individual or more permeable plasma optical emission.For example when forming three windows, it can be passed through with first window
The light intensity signal of plasma optical emission is as reaction signal, respectively with second and the 3rd plasma optical emission for passing through of window
Light intensity signal as two reference signals, reaction signal is respectively compared with two reference signals, then compared result carry out
Computing or logic decision are so as to monitor whether to reach process endpoint；Or can also to second and the 3rd window pass through plasma
The light intensity signal of body light radiation is handled and obtains new reference signal, and reaction signal is compared and root with new reference signal
Monitor whether to reach process endpoint according to comparative result.
Fig. 6 show the schematic diagram of the plasma processing apparatus of another embodiment of the present invention.The plasma of the present embodiment
Body processing unit is inductive type, including processing chamber housing 61, radio frequency source 62 and endpoint monitoring unit 63.In processing chamber housing 61
Bottom sets such as electrostatic chuck of pedestal 612, and pending substrate W is placed on pedestal 612, and the top of processing chamber housing 61 sets gas
Spray head 613, gas spray is used to introduce reaction gases into chamber from external reaction gas source.Outside the top plate of processing chamber housing
Inductance-coupled coil is configured with above side, radio frequency source 62 is connected by adaptation (not shown) with the coil, what it was provided penetrates
Frequency electric current flows into coil and produces magnetic field around the coil, and then generates electric field in processing chamber housing 61, with this to being injected into
Reacting gas in chamber is ionized and produces plasma, to carry out respective handling to substrate W.In gas spray 613
With the space between substrate W, the barrier assembly 615 of horizontal arrangement one, for optionally only make free radical by and suppress sun from
Son passes through.Using the barrier assembly 615, the energy of plasma can be reduced, prevent cation from reaching substrate to being bombarded on substrate
Cause damage.In the present embodiment, barrier assembly 615 is made up of two overlapping plates, and each plate has multiple through holes
615a, and the through hole of upper plate and the through hole of lower plate be not overlapping.In general the biased electrical that cation can be produced by pedestal
Pressure attract and along rectilinear movement, free radical due to be it is neutral do not attracted and random movement by bias voltage, therefore in two plates
In the case of part through hole is nonoverlapping, the entity part of lower plate is collided by the cation of upper plate through hole and can not be passed through
Lower plate, but free radical is not to move linearly still can as a result to enable to select from plasma by the through hole of lower plate
Pass through free radical to property.Barrier assembly preferably with ceramics the dielectric substance such as (such as aluminum oxide) or quartz be made or
Barrier assembly surface has ceramics or quartzy coating, with prevent free radical due to conductive material contacts and inactivate.The present embodiment
In barrier assembly it is merely illustrative, in other embodiments, barrier assembly 615 can also be lamina, by barrier assembly
Apply negative DC voltage and thick sheaths are produced on the surface of barrier assembly, to prevent cation and electronics from passing through through hole.
Barrier assembly 615 is actual to divide processing chamber housing in order to which plasma is produced above and below space and plasma processing space
Two parts, due to being handled merely with free radical substrate, therefore the light of the plasma optical emission of the top of barrier assembly 615
The influence of strong signal subject plasma handling process reaction is very small.The second window 614b is arranged at processing chamber in the present embodiment
Being located above barrier assembly for the side wall 611 of room 61 is located, by first window 614a be arranged at side wall 611 under the barrier assembly
At side, the reaction of the first light intensity signal subject plasma is obtained in the plasma optical emission thus passed through from first window 614a
Influence degree itself is significantly smaller than the second light intensity signal obtained in the plasma optical emission that the second window 614b is passed through.
In this case, although first window 614a position is still corresponding with pedestal, but the second window 614b not necessarily need be remote
Far above first window, as long as two windows are located at barrier assembly upper and lower respectively.Preferably first window 614a is located at
0-100mm above substrate W, the second window 614b are located at 10mm-500mm above substrate.Second window 614b endpoint monitoring units
63 by the first light intensity signal with the second light intensity signal computing to eliminate the first light intensity signal by anti-except plasma-treating technology
Answer the shake caused by the interference outside itself and the terminal of plasma-treating technology is detected according to operation result.Endpoint monitoring
The function and operation principle of unit 63 are same as the previously described embodiments, will not be repeated here.It is more than 2 windows for the formation of side wall
Situation, it should be ensured that for obtain reaction signal window be located at barrier assembly below, for obtain reference signal window position
Above barrier assembly.
Fig. 7 show the schematic flow sheet of plasma-treating technology monitoring method of the present invention, and the monitoring method can be applied
In the plasma processing apparatus of above-mentioned first embodiment and second embodiment, it comprises the following steps：
S1：The first light intensity signal is obtained in the plasma optical emission passed through from first window and is passed through from the second window
Plasma optical emission in obtain the second light intensity signal, wherein the reactant of the first light intensity signal and plasma-treating technology
Concentration or by-product concentration correspondence.
In the step, the first light is extracted from the light radiation of the plasma passed through by first window first, from by
The second light is extracted in the light radiation for the plasma that two windows are passed through, wherein the first light and plasma-treating technology is anti-
Answer thing or accessory substance associated.Then the first light and the second light are converted into corresponding electric signal in real time；Then to first
The electric signal of light and the second light is processed to form the first light intensity signal and the second light intensity signal respectively, the first light intensity signal and
The difference of two light intensity signals is compared to the first light and the difference expanded of the electric signal of the second light.
S2：By the first light intensity signal and the second light intensity signal computing with by by the reactions change with plasma-treating technology
The shake of the first light intensity signal and the second light intensity signal caused by unrelated external interference signals is offseted, and according to computing knot
Fruit detects the terminal of plasma-treating technology.
In the step, object function Y=F (f (t), g are set up according to the first light intensity signal and the second light intensity signal first
(t)), object function Y=F (f (t), g (t)) can be dry because of outside by the first light intensity signal f (t) and the second light intensity signal g (t)
Disturb the signal jitter that signal causes to offset, be and the incoherent function of external interference signals；Then examined according to the object function
Survey the terminal of plasma-treating technology and export detection signal, for example, be combined by using derivation, integration or a variety of computings
Complicated algorithm determine process endpoint.
In summary, plasma processing apparatus proposed by the invention and process-monitor method, by will be from by from base
Obtained in the plasma optical emission that the second window of piece farther out is passed through, less second light of subject plasma reaction influence
Strong signal is used as reference signal, it is will being obtained from the plasma optical emission that passed through close to the first window of substrate, with
Reactant or the first big light intensity signal of the corresponding subject plasma reaction influence of accessory substance are used as reaction signal, according to reaction
Signal and the operation result of reference signal carry out endpoint monitoring, when the plasma produced in processing chamber housing by with plasma
During the unrelated external interference signals of the reactions change of science and engineering skill in itself (changes of such as process conditions), due to reaction signal and reference
Signal is influenceed by the external disturbance simultaneously, and the interference is offset after both computings, so as to avoid because external disturbance is made
Into plasma-treating technology terminal erroneous judgement, and then improve endpoint monitoring accuracy.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (12)
1. a kind of plasma processing apparatus, including：
Processing chamber housing, its bottom is provided with for into the processing chamber housing provided with the pedestal for carrying pending substrate, top
Input the gas spray of reacting gas；
Radio frequency source, for the reacting gas in the processing chamber housing to be ionized to generate plasma；
Characterized in that, also including：
The multiple of first window and the second window that at least include for being formed at the processing chamber housing side wall different height can pass through etc.
The window of gas ions light radiation, the first window has first height corresponding with the position of the substrate, described second
Window has the second height more than first height；And
Endpoint monitoring unit, its obtained from the plasma optical emission passed through by second window the second light intensity signal and
The first light intensity signal is obtained from the plasma optical emission passed through by the first window, by first light intensity signal with
The second light intensity signal computing by the external interference signals unrelated with the reactions change of plasma-treating technology will be drawn
The shake of first light intensity signal and the second light intensity signal that rise is offseted, and detects the plasma according to operation result
The terminal of handling process, wherein the reactant concentration or accessory substance of first light intensity signal and the plasma-treating technology
Concentration correspondence.
2. plasma processing apparatus according to claim 1, it is characterised in that the endpoint monitoring unit includes：
Filter element, for extracting the first light from the plasma optical emission passed through by the first window and from by institute
The second light is extracted in the plasma optical emission for stating the second window transmission, wherein at first light and the plasma
The reactant or accessory substance of science and engineering skill are associated；
Optical signal conversion unit, for first light and the second light to be converted into corresponding electric signal in real time；And
Analytic unit, according to the electric signal of the electric signal of first light and the second light obtain first light intensity signal and
Second light intensity signal simultaneously sets up object function Y=F (f (t), g (t)), and the plasma is detected according to the object function
The terminal of handling process simultaneously exports detection signal, and wherein t is the time, and f (t) is first light intensity signal, and g (t) is described the
Two light intensity signals, the object function is and the incoherent function of the external interference signals.
3. plasma processing apparatus according to claim 2, it is characterised in that the analytic unit includes：
Processing module, processes to form first light intensity signal and the second light to the electric signal of first light and the second light
Strong signal is to expand the difference of the electric signal of first light and the second light；
Setting module, the object function is set up according to first light intensity signal and the second light intensity signal；
Judge module, determines that the plasma-treating technology is reached home and exports the detection according to the object function and believes
Number.
4. plasma processing apparatus according to claim 2, it is characterised in that the endpoint monitoring unit also includes control
Unit processed, it controls the process conditions in the processing chamber housing according to the detection signal.
5. the plasma processing apparatus according to any one of claim 2 to 4, it is characterised in that second light with
The reactant or accessory substance of the plasma-treating technology are associated or unconnected.
6. plasma processing apparatus according to claim 1, it is characterised in that also including horizontal arrangement in the gas
Barrier assembly between spray head and the substrate, for from the plasma passing through optionally free radical；Institute
The second window is stated above the barrier assembly, the first window is located at below the barrier assembly.
7. the plasma processing apparatus according to claim 1 or 6, it is characterised in that the first window is located at described
0-100mm above substrate；Second window is located at 10mm-500mm above the substrate.
8. a kind of monitoring method of plasma-treating technology, applied to a plasma processing apparatus, the corona treatment
Device includes processing chamber housing and radio frequency source, and the processing chamber housing bottom is provided with to be provided with for carrying the pedestal of pending substrate, top
Gas spray for inputting from reacting gas to the processing chamber housing, the radio frequency source is used for will be anti-in the processing chamber housing
Gas ionization is answered to generate plasma；Wherein, being formed at the different height of processing chamber housing side wall at least includes the first window
The window of multiple permeable plasma optical emissions of mouth and the second window, the first window has the position with the substrate
Corresponding first height, second window has the second height more than first height；The corona treatment dress
Selectively horizontal arrangement one is put to be located between the first window and the second window, for the selectivity from the plasma
Ground makes the barrier assembly that free radical passes through；
The monitoring method comprises the following steps：
S1：The first light intensity signal is obtained in the plasma optical emission passed through from the first window and from second window
The second light intensity signal, first light intensity signal and the plasma-treating technology are obtained in the plasma optical emission of transmission
Reactant concentration or by-product concentration correspondence；
S2：By first light intensity signal and the second light intensity signal computing with by by with the plasma-treating technology
The shake of first light intensity signal and the second light intensity signal caused by the unrelated external interference signals of reactions change is offseted,
And the terminal of the plasma-treating technology is detected according to operation result.
9. monitoring method according to claim 8, it is characterised in that step S1 includes：
S11：The first light is extracted from the light radiation of the plasma passed through by the first window and from by described second
The second light is extracted in the light radiation for the plasma that window is passed through, wherein first light and plasma-treating technology
Reactant or accessory substance are associated；
S12：First light and the second light are converted into corresponding electric signal in real time；And
S13：The electric signal of first light and the second light is processed to form first light intensity signal and the second light respectively
Strong signal is to expand the difference of the electric signal of first light and the second light.
10. monitoring method according to claim 9, it is characterised in that step S2 includes：
S21：Object function Y=F (f (t), g (t)) is set up according to first light intensity signal and the second light intensity signal, wherein t is
Time, f (t) is first light intensity signal, and g (t) is second light intensity signal, and the object function is dry with the outside
Disturb the incoherent function of signal；And
S22：The terminal of the plasma-treating technology is detected according to the object function and detection signal is exported.
11. monitoring method according to claim 9, it is characterised in that also include：
S3：Process conditions according to the endpoint monitoring output control of the plasma-treating technology in processing chamber housing.
12. the monitoring method according to any one of claim 9 to 11, it is characterised in that second light is anti-with etching
Answer thing or etch product associated or unconnected.
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| US10510512B2 (en) * | 2018-01-25 | 2019-12-17 | Tokyo Electron Limited | Methods and systems for controlling plasma performance |
| CN109360796A (en) * | 2018-09-29 | 2019-02-19 | 德淮半导体有限公司 | Semiconductor device and its working method |
| JP7183090B2 (en) * | 2019-03-20 | 2022-12-05 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| CN113447243B (en) * | 2020-05-26 | 2023-03-10 | 重庆康佳光电技术研究院有限公司 | End point detection device, etching equipment and detection method |
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| TW201608597A (en) | 2016-03-01 |
| CN105405735A (en) | 2016-03-16 |
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