CN105399089B - Graphene generation method, device and equipment based on any substrate - Google Patents
Graphene generation method, device and equipment based on any substrate Download PDFInfo
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- CN105399089B CN105399089B CN201510933166.3A CN201510933166A CN105399089B CN 105399089 B CN105399089 B CN 105399089B CN 201510933166 A CN201510933166 A CN 201510933166A CN 105399089 B CN105399089 B CN 105399089B
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Abstract
The present invention provides a kind of graphene generation methods based on any substrate, including：Metal and carbon are generated into carbon metal alloy；The fusing point that temperature is higher than the carbon metal alloy is controlled, the carbon metal alloy of the liquid is poured and is applied to substrate surface；It is segregated at the interface of the carbon metal and substrate, guides liquid carbon metal alloy, generate graphene film.The present invention is in such a way that carbon metal alloy is segregated, it can facilitate and guide liquid carbon alloy material, allow to generate graphene film in any substrate, and the participation of etching, water, organic solvent is not needed yet, reduce and generates the limitation that other ingredients when graphene generates the limitation of substrate and graphene participate in.
Description
Technical field
The invention belongs to the dilute fields of graphite, more particularly to graphene generation method, device and equipment based on any substrate.
Background technique
Graphene is separated from graphite material, by the two dimension crystalline substance for the only one layer atom Baidu that carbon atom forms
Body.Since its ductile strength is high, conducts electricity very well and feature that translucency is good, for example, its breaking strength is also higher than steel
200 times or more, electric conductivity is higher than the electric conductivity of silver, replaces silicon with graphene, it will so that computer processor
Fast hundreds times of the speed of service, in addition graphene is almost transparent and compactness is good, may be used as transparent electronic product raw material,
It is very widely used, and application value is very high.
In the manufacturing process of graphene, method used at present includes chemical gaseous phase deposition method, by methane and hydrogen
Mixed gas, reaction compartment is introduced by inlet manifold, on a substrate, migration and film forming occur for mixed gas sorption
Chemical reaction, generate graphene under certain humidity.
Graphene generation method used at present, available graphene, but etchant, water are needed in process of production
Or require the curvature on its surface smaller so that substrate is limited to its surface and needs flat with the participation of organic solvent.Therefore,
It needs to participate in using more ingredient in the prior art, and the substrate for generating graphene is restricted.
Summary of the invention
The purpose of the present invention is to provide a kind of graphene generation methods based on any substrate, to solve in the prior art
It needs to participate in using more ingredient, and the problem of the substrate for generating graphene is restricted.
In a first aspect, the embodiment of the invention provides a kind of graphene generation method based on any substrate, the method
Including：
Metal and carbon are generated into carbon metal alloy；
The fusing point that temperature is higher than the carbon metal alloy is controlled, the carbon metal alloy of the liquid is poured and is applied to substrate table
Face；
It is segregated at the interface of the carbon metal and substrate, guides liquid carbon metal alloy, generate graphene film.
With reference to first aspect, described that metal and carbon are generated into carbon gold in the first possible implementation of first aspect
Belonging to alloy step includes：
The metal is packed into container and is evacuated, the metal is heated；
When the METAL HEATING PROCESS to the first temperature range, it is passed through the hydrogen and the second set rate of the first set rate
Carbon-source gas, control pressure in the container to predetermined pressure range；
It is raw after the duration that the temperature of the METAL HEATING PROCESS meets the first temperature range meets scheduled time requirement
At carbon metal alloy.
The possible implementation of with reference to first aspect the first, in second of possible implementation of first aspect, institute
Stating the first temperature range is 200 degrees Celsius to 1400 degrees Celsius, the first set rate 1-100SCCM, and described second is predetermined
Rate is 1-5000SCCM, and the scheduled time requirement is 1 minute to 5 hours, and the predetermined pressure range is 0.1m millitorr
To 780 supports.
The possible implementation of with reference to first aspect the first, in the third possible implementation of first aspect, institute
Stating carbon-source gas is carbon compound or hydrocarbon.
The possible implementation of with reference to first aspect the first, in the 4th kind of possible implementation of first aspect, institute
Stating container is pipe furnace, and the pipe furnace material includes any one or multiple combinations of following material：Graphite, quartz, glass, gold
Belong to.
With reference to first aspect, in the 5th kind of possible implementation of first aspect, the control temperature is higher than the carbon
The carbon metal alloy of the liquid is poured and is applied to substrate surface step and includes by the fusing point of metal alloy：
The carbon metal alloy is placed in the environment including air or nitrogen, the temperature value of the environment is in the second temperature
Range is spent, the second temperature range is greater than the fusing point of the carbon metal alloy, the carbon metal alloy is poured and is applied to the base
Bottom surface；
The interface in institute's carbon metal and substrate is segregated, and liquid carbon metal alloy is guided, and generates graphene film
Step includes：
When the carbon metal alloy pours and is applied to the duration of the substrate surface and meets preset time interval, by liquid
Carbon metal alloy guides, and graphene film is left in substrate.
With reference to first aspect, in the 6th kind of possible implementation of first aspect, the metal is gallium, the conjunction of gallium and indium
The alloy or gallium of gold, gallium and tin and the alloy of zinc.
Second aspect, the embodiment of the invention provides a kind of graphene generating means based on any substrate, described devices
Including：
Carbon metal alloy generation unit, for metal and carbon to be generated carbon metal alloy；
Flow coat unit, the fusing point for being higher than the carbon metal alloy for controlling temperature, by the carbon metal alloy of the liquid
It pours and is applied to substrate surface；
It is segregated unit, for being segregated at the interface of the carbon metal and substrate, liquid carbon metal alloy is guided, generates
Graphene film.
In conjunction with second aspect, in the first possible implementation of second aspect, the carbon metal alloy generation unit
Including：
Subelement is heated, for the metal to be packed into container and is evacuated, heats the metal；
Gas is passed through subelement, for being passed through the first set rate when the METAL HEATING PROCESS to the first temperature range
The carbon-source gas of hydrogen and the second set rate controls pressure in the container to predetermined pressure range；
Alloy generates subelement, and the duration for meeting the first temperature range for the temperature when the METAL HEATING PROCESS meets
After scheduled time requirement, carbon metal alloy is generated.
The third aspect, the embodiment of the invention provides a kind of graphene generating device based on any substrate, the equipment
Including：Pipe furnace, first flow controller, second flow controller, heating element, pressure valve, pressure detecting part, temperature detection
Component and controller, wherein：
The heating element is for heating the pipe furnace；
The pressure valve is used to adjust the pressure in pipe furnace；
The temperature detection part is used to detect the temperature in pipe furnace；
The pressure detecting part is used to detect the pressure in pipe furnace；
The first flow controller and second flow controller are used to control the hydrogen and carbon source gas entered in pipe furnace
The flow of body；
The controller is used for according to pressure detecting section components.The detection data of temperature detection part, it is corresponding to control
Metal and carbon are generated carbon metal alloy, and adjustment pipe furnace temperature and pressure, by the liquid by pressure valve and heating element
Carbon metal alloy, which pours, is applied to substrate surface；It is segregated the interface of the carbon metal and substrate, guides liquid carbon metal alloy,
Generate graphene film.
In the present invention, by generating carbon metal alloy by metal and carbon, and the temperature for controlling carbon metal alloy is higher than it
The carbon metal alloy of liquid is poured and is applied to substrate surface by fusing point, by being segregated at the interface of carbon metal and substrate, thus raw
At graphene film, the present invention can facilitate in such a way that carbon metal alloy is segregated and guide liquid carbon alloy material, allow to
Graphene film is generated in any substrate, and does not also need the participation of etching, water, organic solvent, reduces generation graphene
The limitation that other ingredients when limitation and graphene to substrate generate participate in.
Detailed description of the invention
Fig. 1 is the implementation flow chart for the graphene generation method based on any substrate that first embodiment of the invention provides；
Fig. 1 a is the graphene film generating process schematic diagram that first embodiment of the invention provides；
Fig. 2 is the implementation flow chart for the graphene generation method based on any substrate that second embodiment of the invention provides；
Fig. 3 is the structural schematic diagram for the graphene generating means based on any substrate that third embodiment of the invention provides；
Fig. 4 is the structural schematic diagram for the graphene generating device based on any substrate that fourth embodiment of the invention provides.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Based on the graphene generation method of any substrate described in the embodiment of the present invention, it is intended to which solution carries out stone in the prior art
It when black alkene generates, needs to participate in using more ingredient, and the problem of the substrate for generating graphene is restricted, such as existing
When generating graphene using chemical gaseous phase deposition method in technology, composition and reaction gas are introduced by inlet manifold, by group
Close object be adsorbed on substrate, by introduce etchant, water and other organic solvents ingredient, make reactant occur migration and at
The chemical reaction of film, but the ingredient of etchant, water and other organic solvents is needed, so that the shape of substrate is restricted,
For example the curvature for the substrate or substrate for being only plane requires very little, limitation when graphene being caused to generate, to substrate.Under
Face is specifically illustrated the present invention in conjunction with attached drawing.
Embodiment one：
Fig. 1 shows the realization stream of the graphene generation method based on any substrate of first embodiment of the invention offer
Journey, details are as follows：
In step s101, metal and carbon are generated into carbon metal alloy.
Specifically, carbon metal alloy described in the embodiment of the present invention, refers to the alloy material including carbon and metallic element
Material, as in a kind of preferred embodiment of the present invention, the metal material can be gallium, the alloy of gallium and indium, gallium and tin
The alloy of alloy or gallium and zinc.
The metal and carbon generate in the method for carbon metal alloy, can be by the material including carbon, for example can be
Carbon-source gas, or may be that other materials and metal including carbon generate the conjunction of carbon metal by way of heating pressurization
Gold, for example chemical vapor deposition can be carried out to molten metal by chemical vapour deposition technique, carbon is adulterated in liquid metal.
Especially by the method that chemical vapour deposition technique generates carbon metal alloy, will be described further in example 2.
In step s 102, control temperature is higher than the fusing point of the carbon metal alloy, by the carbon metal alloy of the liquid
It pours and is applied to substrate surface.
In embodiments of the present invention, before the carbon metal alloy is carried out flow coat, need to control carbon metal alloy place
The temperature of environment is greater than the fusing point of the carbon metal alloy, so that carbon metal alloy is liquid.
Specifically, the control temperature is higher than the carbon metal alloy as in a kind of preferred embodiment of the present invention
Fusing point, the carbon metal alloy of the liquid is poured and is applied to substrate surface step and includes：
The carbon metal alloy is placed in the environment including air or nitrogen, the temperature value of the environment is in the second temperature
Range is spent, the second temperature range is greater than the fusing point of the carbon metal alloy, the carbon metal alloy is poured and is applied to the base
Bottom surface.
The environment including air or nitrogen, can be under the hotter natural environment of weather, for example temperature can be big
In 30 degree etc..When the alloy that the metal in the carbon metal alloy is gallium and indium, the alloy or gallium of gallium and tin and the alloy of zinc
When, the second temperature range can be preferably 30 degrees Celsius to 35 degrees Celsius, such as can for 31 degrees Celsius, 32 degrees Celsius,
33 degrees Celsius, 34 degrees Celsius etc..This is because：The fusing point of gallium is 29.8 degrees Celsius.When the molar fraction of indium, tin, zinc is less than
When 15%, the fusing point of the alloy of the alloy of gallium and indium, the alloy of gallium and tin and gallium and zinc can be lower, therefore, second temperature model
It encloses and is set as 30 degrees Celsius to the 35 degrees Celsius requirements that can satisfy carbon metal alloy as liquid.
As shown in Figure 1a, within the temperature range of temperature is 30 degrees Celsius to 35 degrees Celsius, pressure can be normal atmosphere
Pressure, on the surface of the substrate by carbon metal alloy liquid flow coat, 110 surface of substrate as shown in Figure 1a are plane, naturally it is also possible to
To be non-planar, due to liquid carbon metal alloy 106 can according to liquid fluidity, substrate it is non-planar on, for example be non-
Contact surface is generated in regular surfaces, and parsing generates graphene film 202 in the rule or irregular contact surface.
In step s 103, it is segregated at the interface of the carbon metal and substrate, guides liquid carbon metal alloy, generated
Graphene film.
As in a kind of currently preferred embodiment, the interface in institute's carbon metal and substrate is segregated, and is led
Liquid carbon metal alloy is walked, generating graphene film step includes：
When the carbon metal alloy pours and is applied to the duration of the substrate surface and meets preset time interval, by liquid
Carbon metal alloy guides, and graphene film is left in substrate.
The preset time interval, can be 1 minute to 5 hours, such as can select 10 minutes, 20 minutes, half an hour,
1 hour, 2 hours, 3 hours, 4 hours etc..The selection of the preset time interval, can be according to the carbon gold of liquid
The resolution speed for belonging to alloy flexibly selects, such as very fast in carbon metal alloy cooling velocity, for example is reduced to by 34 degrees Celsius
It is 30 degrees Celsius, very fast in the graphene film that the surface parsing of substrate and carbon metal alloy liquid generates, thus can select accordingly
The short period is selected, after the short period, the carbon metal alloy liquid is guided.Correspondingly, if the solution of graphene film
Analyse speed it is slower, such as temperature decline it is less when, parsing takes a long time, then select the longer stable time accordingly,
Graphene film is generated with parsing.
The carbon metal alloy liquid guides, can according to carbon metal alloy gravity itself, so that carbon metal alloy flows away, or
Person can also be by other adsorption tools, for example by the way of pressure adsorption, the carbon metal alloy liquid is guided.Thus
Graphene stays in substrate.
The present invention is by generating carbon metal alloy by metal and carbon, and the temperature for controlling carbon metal alloy is higher than its fusing point,
The carbon metal alloy of liquid is poured and is applied to substrate surface, by being segregated at the interface of carbon metal and substrate, to generate stone
Black alkene film, the present invention can facilitate in such a way that carbon metal alloy is segregated and guide liquid carbon alloy material, allow in office
Substrate of anticipating generates graphene film, and does not also need the participation of etching, water, organic solvent, reduces and generates graphene to base
The limitation that other ingredients when the limitation at bottom and graphene generate participate in.
Embodiment two：
Fig. 2 shows the realization streams for the graphene generation method based on any substrate that second embodiment of the invention provides
Journey, details are as follows：
In step s 201, the metal is packed into container and be evacuated, heat the metal.
Specifically, carbon metal alloy described in the embodiment of the present invention, the method that can select chemical vapor deposition is given birth to
At.Step S201-S203 will specifically carry out this method schematically illustrating introduction in the present embodiment.It is understood that passing through
It is one of more preferential embodiment that the method for chemical vapor deposition, which generates carbon metal alloy, can not this method work
The limitation of carbon metal alloy is generated for the application.
Wherein, the container can be pipe furnace 101, the graphene generating device based on any substrate as shown in Figure 4
100, the diameter of pipe furnace is a, and the length of pipe furnace is 5-8 times of diameter.For example the diameter of pipe furnace can be 8 centimetres, then pipe furnace
Length then can be 40 centimetres to 60 centimetres.The pipe furnace material includes any one or multiple combinations of following material：
Graphite, quartz, glass, metal.It is understood that needing to select the metal of higher melt when the pipe furnace material is metal
Material, so that adapting to the requirement of heating in process of production.
Cylindrical cavity is provided in the pipe furnace, the surface of the cylindrical cavity is provided with heating element 102, in institute
State that cylindrical empty is intracavitary to be provided with substrate 110 and temperature detection part, the temperature detection part can be temperature sensor,
Temperature feedback by will test controls the heating element by controller and is heated or reduced temperature, institute to controller
Stating substrate surface can be regular planar, or can also be with non-regulation planar, for pouring the carbon metal alloy 106 of coating liquid.
It is evacuated to the container, its object is to reduce when other impurity or gas generate carbon metal alloy to make
At impurity effect.
In step S202, when the METAL HEATING PROCESS to the first temperature range, be passed through the hydrogen of the first set rate with
And second set rate carbon-source gas, control pressure in the container to predetermined pressure range.
Metal is heated to the first temperature range, for gallium described in the embodiment of the present invention, the alloy of gallium and indium, gallium and tin
Alloy or gallium and zinc alloy, first temperature range can be 200 degrees Celsius to 1400 degrees Celsius, such as can be with
It is 300 degrees Celsius, 500 degrees Celsius, 700 degrees Celsius, 900 degrees Celsius, 1200 degrees Celsius etc..
The pressure control, can be controlled by the pressure detecting part 107 and pressure valve, work as pressure detecting
When component detection 107 is undesirable to current pressure, it is adjusted correspondingly by pressure valve 108.
The predetermined pressure range can be 0.1m millitorr to 780 supports, wherein 1 support (Torr)=133.322 pa
(Pa).Arbitrary pressure limit, such as 1 support, 10 supports, 50 supports, 100 supports, 500 supports etc. can be selected wherein.
The hydrogen and carbon-source gas are passed through, as shown in figure 4, can pass through first flow controller 103A and second
Amount controller 103B controls its uninterrupted being passed through, for example, first flow controller 103A is for controlling in the embodiment of the present invention
System leads to the flow of hydrogen 104, and second flow controller 103B controls the flow of carbon-source gas 105.In preferred implementation method,
The first set rate 1-100SCCM, second set rate are 1-5000SCCM.Wherein SCMM indicates standard state milli
Liter/min.
The carbon-source gas is carbon compound or hydrocarbon, for example can be methane, ethylene etc..
In step S203, when the METAL HEATING PROCESS temperature meet the first temperature range duration meet it is scheduled
After time requirement, carbon metal alloy is generated.
After the METAL HEATING PROCESS is to scheduled range and leads to hydrogen and carbon-source gas simultaneously, when in this temperature range
Interior hold mode is passed through hydrogen and carbon-source gas according to scheduled flow simultaneously, duration reaches the scheduled time and wants
After asking, that is, produce carbon metal alloy.After the present invention obtains carbon metal alloy, bomb furnace is needed to carry out cooling processing, it is described
Add waterfall or cooling method includes rapid thermal treatment and flash anneal processing etc..
The scheduled time requirement can be 0.1 minute to 5 hours, and according to leading to, hydrogen, the flow of carbon-source gas are big
Small, temperature size and flexibly adjustment.For example the amount for the hydrogen, carbon-source gas being passed through is more, temperature is higher, then it is described predetermined
Time requirement can reduce accordingly.
In step S204, control temperature is higher than the fusing point of the carbon metal alloy, by the carbon metal alloy of the liquid
It pours and is applied to substrate surface.
It in step S205, is segregated at the interface of the carbon metal and substrate, guides liquid carbon metal alloy, generated
Graphene film.
Step S204 and step S205 and the embodiment of the present invention one are essentially identical, so here is no more repetition.
The embodiment of the present invention on the basis of example 1, further describes the generation of one of carbon metal alloy
Journey, the control of formation condition is carried out by bomb furnace, and more convenient realization makes the generation of graphene.
Embodiment three：
Fig. 3 shows the structural representation of the graphene generating means based on any substrate of third embodiment of the invention offer
Figure, details are as follows：
Based on the graphene generating means of any substrate described in the embodiment of the present invention, including：
Carbon metal alloy generation unit 301, for metal and carbon to be generated carbon metal alloy；
Flow coat unit 302, the fusing point for being higher than the carbon metal alloy for controlling temperature, the carbon metal of the liquid is closed
Gold, which pours, is applied to substrate surface；
It is segregated unit 303, for being segregated at the interface of the carbon metal and substrate, walking guide liquid carbon metal alloy,
Generate graphene film.
Preferably, the carbon metal alloy generation unit includes：
Subelement is heated, for the metal to be packed into container and is evacuated, heats the metal；
Gas is passed through subelement, for being passed through the first set rate when the METAL HEATING PROCESS to the first temperature range
The carbon-source gas of hydrogen and the second set rate controls pressure in the container to predetermined pressure range；
Alloy generates subelement, and the duration for meeting the first temperature range for the temperature when the METAL HEATING PROCESS meets
After scheduled time requirement, carbon metal alloy is generated.
Preferably, first temperature range is 200 degrees Celsius to 1400 degrees Celsius, the first set rate 1-
100SCCM, second set rate are 1-5000SCCM, and the scheduled time requirement is 1 minute to 5 hours, described pre-
Constant-pressure range is 0.1m millitorr to 780 supports.
Preferably, the carbon-source gas is carbon compound or hydrocarbon.
Preferably, the container is pipe furnace, and the pipe furnace material includes any one or multiple combinations of following material：
Graphite, quartz, glass, metal.
Preferably, the metal is gallium, the alloy of gallium and indium, the alloy or gallium of gallium and tin and the alloy of zinc.
Based on the graphene generating means of any substrate described in the embodiment of the present invention, with described in embodiment one and two based on appointing
The graphene generation method for substrate of anticipating is corresponding, so here is no more repetition.
Example IV：
Fig. 4 shows the graphene generating device based on any substrate of fourth embodiment of the invention offer, and details are as follows：
Based on the graphene generating device of any substrate described in the embodiment of the present invention, including：
Pipe furnace 101, first flow controller 103A, second flow controller 103B, heating element 102, pressure valve 108,
Pressure detecting part 107, temperature detection part and controller, wherein：
The heating element 102 is for heating the pipe furnace；
The pressure valve 108 is used to adjust the pressure in pipe furnace；
The temperature detection part is used to detect the temperature in pipe furnace；
The pressure detecting part 107 is used to detect the pressure in pipe furnace；
The first flow controller 103A and second flow controller 103B is used to control the hydrogen 104 entered in pipe furnace
And the flow of carbon-source gas 105；
The controller is used for according to pressure detecting section components.The detection data of temperature detection part, it is corresponding to control
Metal and carbon are generated carbon metal alloy, and adjustment pipe furnace temperature and pressure, by the liquid by pressure valve and heating element
Carbon metal alloy, which pours, is applied to substrate surface；It is segregated the interface of the carbon metal and substrate, guides liquid carbon metal alloy,
Generate graphene film.
In the embodiment of the present invention by the generation method of the graphene generating device based on any substrate embodiment two
It is described, so here is no more repetition.
In several embodiments provided by the present invention, it should be understood that disclosed device and method can pass through it
Its mode is realized.For example, the apparatus embodiments described above are merely exemplary, for example, the division of the unit, only
Only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components can be tied
Another system is closed or is desirably integrated into, or some features can be ignored or not executed.Another point, it is shown or discussed
Mutual coupling, direct-coupling or communication connection can be through some interfaces, the INDIRECT COUPLING or logical of device or unit
Letter connection can be electrical property, mechanical or other forms.
The unit as illustrated by the separation member may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, it can and it is in one place, or may be distributed over multiple
In network unit.It can select some or all of unit therein according to the actual needs to realize the mesh of this embodiment scheme
's.
It, can also be in addition, the functional units in various embodiments of the present invention may be integrated into one processing unit
It is that each unit physically exists alone, can also be integrated in one unit with two or more units.Above-mentioned integrated list
Member both can take the form of hardware realization, can also realize in the form of software functional units.
If the integrated unit is realized in the form of SFU software functional unit and sells or use as independent product
When, it can store in a computer readable storage medium.Based on this understanding, technical solution of the present invention is substantially
The all or part of the part that contributes to existing technology or the technical solution can be in the form of software products in other words
It embodies, which is stored in a storage medium, including some instructions are used so that a computer
Equipment (can be personal computer, server or the network equipment etc.) executes the complete of each embodiment the method for the present invention
Portion or part.And storage medium above-mentioned includes：USB flash disk, mobile hard disk, read-only memory (ROM, Read-Only Memory),
Random access memory (RAM, Random Access Memory), magnetic or disk etc. be various to can store program code
Medium.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (9)
1. a kind of graphene generation method based on any substrate, which is characterized in that the method includes：
Metal and carbon are generated into carbon metal alloy, carry out cooling processing, the metal is gallium, the alloy of gallium and indium, gallium and tin
The alloy of alloy or gallium and zinc；
The fusing point that temperature is higher than the carbon metal alloy is controlled, so that the carbon metal alloy is the carbon metal alloy of liquid, and
The carbon metal alloy of the liquid is poured and is applied to substrate surface；The range of the temperature is 30 degrees Celsius to 35 degrees Celsius；
It is segregated at the interface of the carbon metal alloy and substrate, guides liquid carbon metal alloy, generate graphene film.
2. method according to claim 1, which is characterized in that described to include by metal and carbon generation carbon metal alloy step：
The metal is packed into container and is evacuated, the metal is heated；
When the METAL HEATING PROCESS to the first temperature range, it is passed through the hydrogen of the first set rate and the carbon of the second set rate
Source gas controls pressure in the container to predetermined pressure range；
When the temperature of the METAL HEATING PROCESS meets the first temperature range, and the hydrogen for being passed through the first scheduled rate and second
After the duration of the carbon-source gas of scheduled rate meets scheduled time requirement, carbon metal alloy is generated.
3. method according to claim 2, which is characterized in that first temperature range is 200 degrees Celsius to 1400 Celsius
Degree, the first set rate 1-100sccm, second set rate are 1-5000sccm, the scheduled time requirement
It is 1 minute to 5 hours.
4. method according to claim 2, which is characterized in that the carbon-source gas is carbon compound.
5. method according to claim 2, which is characterized in that the container is pipe furnace, and the pipe furnace material includes following material
Any one or multiple combinations of material：Graphite, quartz, glass, metal.
6. method according to claim 1, which is characterized in that the control temperature is higher than the fusing point of the carbon metal alloy,
The carbon metal alloy of the liquid is poured and is applied to substrate surface step and includes：
The carbon metal alloy is placed in the environment containing nitrogen, the temperature value of the environment is in second temperature range, described
Second temperature range is greater than the fusing point of the carbon metal alloy, and the carbon metal alloy is poured and is applied to the substrate surface；
The interface in carbon metal alloy and substrate is segregated, and liquid carbon metal alloy is guided, and generates graphene film step
Suddenly include：
When the carbon metal alloy pours and is applied to the duration of the substrate surface and meets preset time interval, by the carbon gold of liquid
Belong to alloy to guide, graphene film is left in substrate.
7. a kind of graphene generating means based on any substrate, which is characterized in that described device includes：
Carbon metal alloy generation unit carries out cooling processing, the metal is for metal and carbon to be generated carbon metal alloy
The alloy or gallium of the alloy of gallium, gallium and indium, gallium and tin and the alloy of zinc；
Flow coat unit, the fusing point for being higher than the carbon metal alloy for controlling temperature, so that the carbon metal alloy is liquid
Carbon metal alloy, and the carbon metal alloy of the liquid is poured and is applied to substrate surface；The range of the temperature be 30 degrees Celsius extremely
35 degrees Celsius；
It is segregated unit, for being segregated at the interface of the carbon metal alloy and substrate, liquid carbon metal alloy is guided, generates
Graphene film.
8. device according to claim 7, which is characterized in that the carbon metal alloy generation unit includes：
Subelement is heated, for the metal to be packed into container and is evacuated, heats the metal；
Gas is passed through subelement, for being passed through the hydrogen of the first set rate when the METAL HEATING PROCESS to the first temperature range
And second set rate carbon-source gas, control pressure in the container to predetermined pressure range；
Alloy generates subelement, meets the first temperature range for the temperature when the METAL HEATING PROCESS, and described to be passed through first pre-
If after the duration of the carbon-source gas of the hydrogen of rate and the second scheduled rate meets scheduled time requirement, generating carbon gold
Belong to alloy.
9. a kind of graphene generating device based on any substrate, which is characterized in that the equipment includes：Pipe furnace, first flow
Controller, second flow controller, heating element, pressure valve, pressure detecting part, temperature detection part and controller, wherein：
The heating element is for heating the pipe furnace；
The pressure valve is used to adjust the pressure in pipe furnace；
The temperature detection part is used to detect the temperature in pipe furnace；
The pressure detecting part is used to detect the pressure in pipe furnace；
The first flow controller and second flow controller are used to control the hydrogen and carbon-source gas entered in pipe furnace
Flow；
The controller is used for according to the detection data of pressure detecting part and temperature detection part, it is corresponding control pressure valve and
Metal and carbon are generated carbon metal alloy, carry out cooling processing by heating element；Pipe furnace temperature and pressure is adjusted, control temperature is high
In the fusing point of the carbon metal alloy, make the carbon metal alloy of the carbon metal alloy liquid, and the carbon of the liquid is golden
Category alloy, which pours, is applied to substrate surface, and the temperature range is 30 degrees Celsius to 35 degrees Celsius；In the carbon metal alloy and substrate
Interface be segregated, guide liquid carbon metal alloy, generate graphene film, the metal be gallium, the alloy of gallium and indium, gallium
With the alloy or gallium of tin and the alloy of zinc.
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| CN201510933166.3A CN105399089B (en) | 2015-12-15 | 2015-12-15 | Graphene generation method, device and equipment based on any substrate |
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| CN201510933166.3A CN105399089B (en) | 2015-12-15 | 2015-12-15 | Graphene generation method, device and equipment based on any substrate |
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