CN105397609A - Profile correction machining method for high-precision plane of optical part - Google Patents
Profile correction machining method for high-precision plane of optical part Download PDFInfo
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- CN105397609A CN105397609A CN201510736110.9A CN201510736110A CN105397609A CN 105397609 A CN105397609 A CN 105397609A CN 201510736110 A CN201510736110 A CN 201510736110A CN 105397609 A CN105397609 A CN 105397609A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a profile correction machining method for a high-precision plane of an optical part. According to the method, on the basis of traditional grinding and polishing methods, polishing pads located in annular areas in different radial positions of a special profile correction polishing disc are made not to have a material removing effect through the special profile correction polishing disc, and combined with process condition control, different material removal rate distribution curves are obtained; according to initial surface profile morphology deviation of the surface of a workpiece, machining time of process conditions corresponding to various material removal characteristics is designed, so that profile correction machining of the surface of the workpiece is achieved. An upper disc body of the polishing disc is composed of multiple concentric rings with a lifting function, different surface material removal rate distribution characteristics can be obtained, and deterministic machining is achieved. According to the method, profile correction schemes are designed according to the initial surface profile morphology deviation of the optical part, deterministic material removal machining is carried out on the surface, the total removal allowance is small, machining efficiency is high, and cost is low. The profile correction machining method is suitable for to-be-machined workpieces in different shapes and with different thicknesses.
Description
Technical field
The invention belongs to optical effect correction technical field, specifically a kind of modification processing of optical element high precision plane.
Background technology
Planar optical elements is the important component part of optical system, the flat normal mirror etc. in the plane mirror in such as telescopic system, paraboloidal mirror checking system.In such systems, the Accuracy of planar optical elements image quality and the testing result of system.In recent years, along with the development of optical technology, the optical element in optical system constantly presents the trend that quantity is many and bore is large, as large-scale astronomical telescope, device of high power laser etc.For American National igniter (NIF), it is a huge and complicated huge optical engineering, it is be all unprecedented qualitatively or quantitatively to the requirement of optical element, 192 road light beams need the optical elements of large caliber of about 7500 42cm × more than 42cm sizes altogether, add backup element and the common need of small-bore element total about 30000 optical elements, this wherein just contains a large amount of planar optical elements.Along with the continuous increase of planar optical elements bore, its difficulty of processing and cost are also in continuous lifting.
With silicon carbide ceramics be the particulate composite of representative because having, density is low, specific stiffness is high, the coefficient of expansion is little, good heat conductivity, linear expansion coefficient evenly, all many-sided advantages such as hot property and mechanical performance isotropism, make it in optical system, have good application prospect, the speculum made with such material has the mechanical performance of high strength, highly light-weighted lightweight construction mirror can be made, thus significantly reduce the quality of system.Thyrite also has self defect, on the one hand, silicon carbide compactness extent can not show a candle to glass material, silicon carbide roughness after the defects such as residual pore can make polishing only can reach 3 ~ 4nm (RMS), and the surface roughness that can not meet needed for high accuracy speculum is better than the technical requirement of 1nm (RMS).On the other hand, due to the hardness of carborundum and chemical stability all very high, working (machining) efficiency is lower.In order to obtain high-precision speculum, after generally first silicon carbide substrate being worked into certain precision, again to its modifying surface, namely the modified layer being coated with one deck densification at silicon carbide is in order to coated carbon SiClx blemish and improve its machinability, finally, high accuracy speculum is obtained to the processing of silicon carbide modified layer.
Traditional diamond-making technique adopts pitch disk ring mode of throwing to obtain high precision plane, and in process, need effects on surface constantly to carry out measurement and adjusting process parameter, be a kind of uncertain processing method based on artificial experience.Owing to removing the uncertain of surplus, it is enough thick that surperficial modified layer will be coated with, to prevent from crossing thin even completely by jettisoning to modified layer during designated precision in Surface Machining.And thicker thickness of coating not only increases the time and cost that are coated with, and larger residual stress can be produced in modified layer inside, have influence on the mechanical stability of modified layer.
In order to overcome the non-determined processing problems that traditional optical plane machining exists, current advanced optical components adopts and controls with computer the local shape modifications process technology that polishing technology is representative.Such technology not only can carry out the certainty correction of the flank shape processing of high-precision flat surface parts, and can be competent at the correction of the flank shape processing of curved surface part.But owing to adopting the mode of local shape modifications processing, such technology exists following problem: working (machining) efficiency is lower, and final the treatment of surfaces of components exists medium-high frequency error, can have an impact to optical property, extra fairing technique is needed to remove medium-high frequency error.Except computer controls polishing, improve from principle traditional polishing technology, be born the technology such as MRF and ion beam polishing, is particularly suitable for the superhigh precision processing on optical element surface.Technique of Magnetorheological Finishing results from the beginning of the nineties in last century, it uses high-intensity magnetic field to control magnetic flow liquid, make it be formed can to play " bistrique " of ablation, the shape of bistrique and hardness are all make suitable adjustment by magnetic field according to processed element.When polishing, control the track of polishing and residence time by computer thus make can carry out accurate and effective grinding between bistrique and workpiece.But the material removal amount of MRF is less, to the surface figure accuracy on polished surface, there is higher requirement, be applied to the later stage polishing of workpiece more, need the traditional polishing technology of application to carry out corresponding pre-polish(ing) process before using it.Ion beam polishing utilizes the inert gas ion beam stream bombardment surface of the work with certain energy, by the atomic collision of ion and surface of the work, transmits momentum and energy, make a part of atom be stripped surface of the work, form the removal to surface of the work material.The same with MRF, before use ion beam polishing, also will carry out corresponding pre-polish(ing) process, and require processing environment relatively stricter, it needs to work under the environment of high vacuum, and make the expensive of relevant device, cost is high.
Relative to the local shape modifications technology removed based on pointwise, overall correction of the flank shape technology has relatively high material removing rate, and can avoid producing high frequency error at surface of the work.IC manufacturing field, in the manufacturing process of copper interconnection layer, in order to realize excess surface copper product uniformity remove, adopt a kind of based on subregion back pressure adjustment material removing rate distribution control method---multi-region pressure is planarized.This method achieves the control of overall material removing rate, and can be used for the overall correction of the flank shape processing of plane in theory, but the method existing problems are: the processing being only applicable to ultra-thin part, in addition, remove function and limit by thin plate bending characteristic, modification capability is limited.
Summary of the invention
For the problems referred to above, for solving the deficiency of existing optical effect correction method, main purpose of the present invention is to provide a kind of modification processing of optical element high precision plane, the method is processed mainly for planar wave part, the certainty overall situation correction of the flank shape processing on optical element surface can either be realized, reduce to remove surplus, improve working (machining) efficiency, avoid surface high frequency error and cut down finished cost, going for again the processing of any thickness part.
To achieve these goals, the present invention proposes a kind of modification processing of optical element high precision plane, the method comprises: on the basis of conventional chemical-mechanical polishing or machine glazed finish, Different Diameter is positioned on polishing disk to the polishing pad of position annular region by removing, and combined process condition controls, obtain different material removing rate distribution curves, according to surface of the work initial profile deviation, optimize the process time of the corresponding process conditions of various material removing rate function, realize the correction of the flank shape processing of surface of the work.
A modification processing for optical element high precision plane, specifically comprises the following steps:
A, the overall polishing disk replaced with correction of the flank shape special throwing CD on existing polisher lapper, described correction of the flank shape special throwing CD comprises dish and polishing pad on base, polishing disk, and described base is fastened on the lower wall of polisher lapper by pin-and-hole; Described polishing disk coils and is made up of multiple concentric ring, described concentric ring is all positioned at above base, and the radial width of described concentric ring is less than 1/2 of workpiece to be processed radius; Each concentric ring that described polishing disk coils all has independent-lifting function, and after all concentric rings rise, its upper surface is in same plane; Described polishing pad is made up of multiple concentric ring pad, is of similar shape with multiple concentric ring, is pasted onto above each concentric ring respectively by gum;
B, all concentric rings on correction of the flank shape special throwing CD are made all to be in raised configuration, by the mode of automatic or manual, one of them concentric ring is declined, start to carry out polishing, measure corresponding Material Removing Function, the concentric ring of diverse location of declining successively carries out removal function measurement, and preserves data.The concrete metering system of Material Removing Function comprises the following steps: cheat at the 5-50 micrometer depth point of three the different radial positions of workpiece to be processed Surface Machining and circumferential position, the plane formed with these three Dian Keng bottom surfaces is for datum level, with workpiece to be processed surface profile pattern before synthesis measuring profilometer measurement polishing, given polish pressure, upper dish rotating speed, lower wall rotating speed and eccentric throw carry out polishing, and the plane again formed with three Dian Keng bottom surfaces after processing is for datum level measuring workpieces surface profile pattern.Former and later two surface of the work profile patterns of polishing are made difference and are Material Removing Function, obtain material removing rate function divided by polishing time.The material removing rate function M recorded under preserving different condition
ir (), the value that subscript i records under representing different condition, r is workpiece to be processed radial direction coordinate.
C, formulate overall correction of the flank shape processing scheme, by seismic responses calculated workpiece to be processed at different materials clearance function M
it process time under (r) corresponding process conditions
idraw overall correction of the flank shape processing scheme.The optimized variable of described Optimized model is t process time under the corresponding process conditions of each material removing rate function
i, object function is that the relative shape deviation of correction of the flank shape rapidoprint total removal amount profile and workpiece to be processed surface surplus profile to be processed minimizes, and constraints is t described process time
ibe positive number, and total elapsed time is no more than T preset time.
The method of described seismic responses calculated comprises the following steps: measure the initial pattern function h in workpiece to be processed surface
0(r), calculating processing surplus h
mr () is initial surface profile pattern function h
0(r) and target face surface profile pattern function h
tr the difference of (), selects and allowance curve h
mr () has the material removing rate function M of similar distribution trend
ir (), evenly gets 5-50 point in radial direction, be minimised as target with the departure of these points and be optimized, departure calculates with geometrical mean.Mathematic optimal model is as follows:
Find.t
i
Subjecttot
i>0
In above-mentioned Optimized model, r
kbe the radial coordinate position for calculation deviation amount, J is departure, under requiring the process conditions of each material removing rate function corresponding in constraints, process time t
ibe greater than 0, total elapsed time is no more than T.
D, the overall correction of the flank shape processing scheme utilizing above-mentioned algorithm to draw carry out actual correction of the flank shape processing to workpiece to be processed.Measure workpiece to be processed surface profile pattern after processing, if do not meet process requirements, repeat step C, again correction of the flank shape processing is carried out to this surface of the work, until workpiece to be processed meets processing request.
Compared with prior art, the present invention has following beneficial effect:
1, because multiple concentric rings polishing disk of the present invention coiled by having elevating function form, different surfacing clearance distribution characters can be obtained, realizing certainty processing.
2, because the present invention is according to the initial surface profile pattern Deviation Design correction of the flank shape scheme of optical element, effects on surface carries out deterministic material removal process, and total removal surplus is little, and working (machining) efficiency is high, and cost is low.
3, because the present invention adopts overall correction method effects on surface to process, can avoid producing high frequency error on workpiece to be processed surface.
4, because the present invention obtains different Material Removing Functions by changing polishing disk structure, therefore not by the restriction of workpiece to be processed size, the workpiece to be processed of arbitrary shape and thickness is gone for.
Accompanying drawing explanation
The present invention has 3, accompanying drawing, wherein:
Fig. 1 carries out overall correction of the flank shape system of processing schematic diagram to high precision plane in the present invention.
Fig. 2 is correction of the flank shape special throwing CD schematic diagram of the present invention.
Fig. 3 is flow chart of the present invention.
In figure: 1, rubbing head, 2, workpiece to be processed, 3, correction of the flank shape special throwing CD, 4, lower wall seat, 31, base, 32, polishing disk coils, 33, polishing pad, 34, center ring, 35, nut, 36, bolt, 37, spring, 38, cutting ferrule.
Detailed description of the invention
The invention provides a kind of modification processing of optical element high precision plane, the inventive method, mainly for the processing of planar wave part, can realize the certainty overall situation correction of the flank shape processing on optical element surface.The method is on the basis of conventional chemical-mechanical polishing or machine glazed finish, the overall polishing disk on polisher lapper is replaced with correction of the flank shape special throwing CD, Different Diameter is positioned on correction of the flank shape special throwing CD to the polishing pad of position annular region by removing, and combined process condition controls, obtain different material removing rate functions, according to workpiece to be processed 2 surperficial initial surface profile pattern deviation, design the process time of the corresponding process conditions of various material removal behavior, realize the correction of the flank shape processing on workpiece to be processed 2 surface.Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Figure 1 shows that the correction of the flank shape system of processing schematic diagram of the inventive method, the structure of this system comprises: driven the polisher lapper lower wall seat 4 rotated by motor, the correction of the flank shape special throwing CD 3 that can manually adjust be assemblied in above polisher lapper lower wall seat 4 rotates with lower wall seat 4, be positioned at the rubbing head 1 being driven rotation by motor above correction of the flank shape special throwing CD 3, and be placed in the workpiece to be processed 2 of rubbing head lower surface, workpiece to be processed 2 is along with rubbing head rotation, rubbing head diameter is not less than the diameter of workpiece to be processed 2, add man-hour rubbing head to move downward, workpiece to be processed 2 is contacted with polishing pad 33, and keep constant contact pressure.
Figure 2 shows that correction of the flank shape special throwing CD 3 schematic diagram of the present invention's specific embodiment, this device comprises: cup dolly 31, on the polishing disk being assemblied in above base 31 by bolt 36, dish 32, makes mating surface be close to by the structure be made up of spring 37 and cutting ferrule 38; Described polishing disk coils 32 to be made up of 8 concentric rings, comprise the width concentric ring combinations such as center ring 34 and 7, wherein center ring 34 is fixedly connected with base 31 by nut 35, for location, other concentric ring all has independently elevating function, by zero shape circle sealing between concentric ring and concentric ring; When all concentric rings are under raised configuration, the upper surface of all concentric rings is in same plane; Polishing pad 33 is also concentric ring structure, is pasted onto on polishing disk and coils above 32, and leave 0.5mm gap between each concentric ring of annular polishing pad 33, interfere when preventing concentric ring to be elevated by gum.
According to one embodiment of present invention, workpiece to be processed 2 for diameter be the wafer of 100mm.
As shown in Figure 3, according to embodiments of the invention, the overall correction of the flank shape processing for workpiece to be processed 2 realizes particular by following steps:
(1) described correction of the flank shape special throwing CD 3 is connected and installed on the polishing disk seat of polisher lapper by pin-and-hole, replace conventional polishing pads, this polisher lapper has the functions such as the control of upper lower burrs rotating speed, downforce control, eccentric throw control and polishing fluid supply.
(2) measure each concentric ring in correction of the flank shape special throwing CD 3 and fall separately the material removing rate function of rear crystal column surface, need burnishing parameters given in advance during measurement, comprise upper lower burrs rotating speed, eccentric throw and polish pressure etc.
(3) use flatness instrument to measure the initial surface profile pattern of workpiece to be processed 2, by contrast initial surface profile pattern and desirable finished surface profile pattern, obtain the distribution character of its minimum removal surplus along crystal column surface radial direction;
(4) processing scheme optimization, fit time coefficient, selects the clearance processing conditions to minimum removal surplus with similar distribution character, with the time coefficient of each processing conditions for variable, optimization optimal value, and formulate final processing scheme successively, realize the object of overall correction of the flank shape.
Claims (1)
1. a modification processing for optical element high precision plane, is characterized in that: comprise the following steps:
A, the overall polishing disk replaced with correction of the flank shape special throwing CD (3) on existing polisher lapper, described correction of the flank shape special throwing CD (3) comprises dish (32) and polishing pad (33) on base (31), polishing disk, and described base (31) is fastened on the lower wall of polisher lapper by pin-and-hole; Described polishing disk coils (32) to be made up of multiple concentric ring, described concentric ring is all positioned at base (31) top, and the radial width of described concentric ring is less than 1/2 of workpiece to be processed (2) radius; Each concentric ring described polishing disk coiling (32) all has independent-lifting function, and after all concentric rings rise, its upper surface is in same plane; Described polishing pad (33) is made up of multiple concentric ring pad, is of similar shape with multiple concentric ring, is pasted onto above each concentric ring respectively by gum;
B, the upper all concentric rings of correction of the flank shape special throwing CD (3) are made all to be in raised configuration, by the mode of automatic or manual, one of them concentric ring is declined, start to carry out polishing, measure corresponding Material Removing Function, the concentric ring of diverse location of declining successively carries out removal function measurement, and preserves data; The concrete metering system of Material Removing Function comprises the following steps: cheat at the 5-50 micrometer depth point of three the different radial positions of workpiece to be processed (2) Surface Machining and circumferential position, the plane formed with these three Dian Keng bottom surfaces is for datum level, with workpiece to be processed (2) surface profile pattern before synthesis measuring profilometer measurement polishing, given polish pressure, upper dish rotating speed, lower wall rotating speed and eccentric throw carry out polishing, and the plane again formed with three Dian Keng bottom surfaces after processing is for datum level measuring workpieces surface profile pattern; Former and later two surface of the work profile patterns of polishing are made difference and are Material Removing Function, obtain material removing rate function divided by polishing time; The material removing rate function M recorded under preserving different condition
i(r), the value that subscript i records under representing different condition, r is workpiece to be processed (2) radial direction coordinate;
C, formulate overall correction of the flank shape processing scheme, by seismic responses calculated workpiece to be processed (2) at different materials clearance function M
it process time under (r) corresponding process conditions
idraw overall correction of the flank shape processing scheme; The optimized variable of described Optimized model is t process time under the corresponding process conditions of each material removing rate function
i, object function is that the relative shape deviation of the surperficial surplus profile to be processed of correction of the flank shape rapidoprint total removal amount profile and workpiece to be processed (2) minimizes, and constraints is t described process time
ibe positive number, and total elapsed time is no more than T preset time;
The method of described seismic responses calculated comprises the following steps: measure the initial pattern function h in workpiece to be processed (2) surface
0(r), calculating processing surplus h
mr () is initial surface profile pattern function h
0(r) and target face surface profile pattern function h
tr the difference of (), selects and allowance curve h
mr () has the material removing rate function M of similar distribution trend
ir (), evenly gets 5-50 point in radial direction, be minimised as target with the departure of these points and be optimized, departure calculates with geometrical mean; Mathematic optimal model is as follows:
Find.t
i
Subjecttot
i>0
In above-mentioned Optimized model, r
kbe the radial coordinate position for calculation deviation amount, J is departure, under requiring the process conditions of each material removing rate function corresponding in constraints, process time t
ibe greater than 0, total elapsed time is no more than T;
D, the overall correction of the flank shape processing scheme utilizing above-mentioned algorithm to draw carry out actual correction of the flank shape processing to workpiece to be processed (2); Measure workpiece to be processed (2) surface profile pattern after processing, if do not meet process requirements, repeat step C, again correction of the flank shape processing is carried out to this surface of the work, until workpiece to be processed (2) meets processing request.
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108381331A (en) * | 2018-03-22 | 2018-08-10 | 大连理工大学 | A kind of planar part overall situation correction of the flank shape processing unit (plant) and method |
CN109623628A (en) * | 2018-12-12 | 2019-04-16 | 大连理工大学 | Inhibit the method for edge effect in a kind of mechanical lapping or polishing process |
CN110270725A (en) * | 2019-06-21 | 2019-09-24 | 大连理工大学 | A kind of high flatness metal surface electrochemistry jet stream correction of the flank shape processing unit (plant) and method |
CN110640618A (en) * | 2019-09-26 | 2020-01-03 | 中国科学院上海光学精密机械研究所 | Detection device and detection method for polishing die repair disc period |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1816422A (en) * | 2003-06-03 | 2006-08-09 | 尼欧派德技术公司 | Synthesis of a functionally graded pad for chemical mechaical planarization |
CN101107097A (en) * | 2005-01-21 | 2008-01-16 | 株式会社荏原制作所 | Substrate polishing method and apparatus |
CN101121246A (en) * | 2006-08-11 | 2008-02-13 | 中芯国际集成电路制造(上海)有限公司 | Method for controlling chemical and mechanical grinding endpoint |
CN101121240A (en) * | 2006-08-09 | 2008-02-13 | 上海华虹Nec电子有限公司 | Method for controlling CMP film thickness internal homogeneity |
CN101957186A (en) * | 2009-07-15 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting surface evenness of wafer and chemically mechanical polishing method |
US20110306274A1 (en) * | 2003-07-02 | 2011-12-15 | Tatsuya Sasaki | Polishing apparatus and polishing method |
-
2015
- 2015-11-03 CN CN201510736110.9A patent/CN105397609B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1816422A (en) * | 2003-06-03 | 2006-08-09 | 尼欧派德技术公司 | Synthesis of a functionally graded pad for chemical mechaical planarization |
US20110306274A1 (en) * | 2003-07-02 | 2011-12-15 | Tatsuya Sasaki | Polishing apparatus and polishing method |
CN101107097A (en) * | 2005-01-21 | 2008-01-16 | 株式会社荏原制作所 | Substrate polishing method and apparatus |
CN101121240A (en) * | 2006-08-09 | 2008-02-13 | 上海华虹Nec电子有限公司 | Method for controlling CMP film thickness internal homogeneity |
CN101121246A (en) * | 2006-08-11 | 2008-02-13 | 中芯国际集成电路制造(上海)有限公司 | Method for controlling chemical and mechanical grinding endpoint |
CN101957186A (en) * | 2009-07-15 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting surface evenness of wafer and chemically mechanical polishing method |
Cited By (15)
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CN109623628A (en) * | 2018-12-12 | 2019-04-16 | 大连理工大学 | Inhibit the method for edge effect in a kind of mechanical lapping or polishing process |
CN110270725A (en) * | 2019-06-21 | 2019-09-24 | 大连理工大学 | A kind of high flatness metal surface electrochemistry jet stream correction of the flank shape processing unit (plant) and method |
CN110640618A (en) * | 2019-09-26 | 2020-01-03 | 中国科学院上海光学精密机械研究所 | Detection device and detection method for polishing die repair disc period |
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CN111062098B (en) * | 2019-11-26 | 2023-09-22 | 天津津航技术物理研究所 | Polishing pad shape design method for improving high-speed polishing surface material removal uniformity |
CN111062098A (en) * | 2019-11-26 | 2020-04-24 | 天津津航技术物理研究所 | Polishing pad shape design method for improving removal uniformity of high-speed polishing surface material |
CN111843754B (en) * | 2020-07-31 | 2021-10-26 | 中国人民解放军国防科技大学 | Method for determinacy shaping excircle roundness of shaft part |
CN111843754A (en) * | 2020-07-31 | 2020-10-30 | 中国人民解放军国防科技大学 | Method for determinacy shaping excircle roundness of shaft part |
CN114800052A (en) * | 2022-03-18 | 2022-07-29 | 大连理工大学 | Grinding method for improving optical wafer surface shape |
CN114800052B (en) * | 2022-03-18 | 2023-09-26 | 大连理工大学 | Grinding method for improving surface shape of optical wafer |
CN116276624A (en) * | 2023-03-29 | 2023-06-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
CN116394151A (en) * | 2023-03-29 | 2023-07-07 | 江苏山水半导体科技有限公司 | Chemical mechanical planarization method for silicon wafer with PSG layer on surface |
CN116394151B (en) * | 2023-03-29 | 2023-12-26 | 江苏山水半导体科技有限公司 | Chemical mechanical planarization method for silicon wafer with PSG layer on surface |
CN116276624B (en) * | 2023-03-29 | 2024-01-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
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