CN105390569A - Manufacture method of positive electrode of solar cell - Google Patents
Manufacture method of positive electrode of solar cell Download PDFInfo
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- CN105390569A CN105390569A CN201510970402.9A CN201510970402A CN105390569A CN 105390569 A CN105390569 A CN 105390569A CN 201510970402 A CN201510970402 A CN 201510970402A CN 105390569 A CN105390569 A CN 105390569A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000004528 spin coating Methods 0.000 claims abstract description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000002679 ablation Methods 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 19
- 239000006117 anti-reflective coating Substances 0.000 claims description 15
- 235000008216 herbs Nutrition 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacture method of a positive electrode of a solar cell. The manufacture method comprises the following steps: carrying out the spin coating of photoresist on the surface of an antireflection film of a silicon wafer subjected to texturization, diffusion and PECVD (Plasma Enhanced Chemical Vapor Deposition) to form a mask; carrying out ablation and slotting on the mask by laser to form a groove of a preset width; depositing positive electrode metal in the groove to form the positive electrode; and removing the mask. The manufacture method of the positive electrode of the solar cell utilizes the photoresist to manufacture the higher electrode, utilizes laser slotting to manufacture the narrower groove to form the narrower electrode, so that the positive electrode, which has a higher depth-width ratio numerical value, of the solar cell can be manufactured, a surface shadow coverage rate can be lowered, and the light interception area of a solar cell piece can be enlarged so as to improve the photovoltaic conversion efficiency of the cell.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, particularly relate to a kind of manufacture method of front electrode of solar battery.
Background technology
Along with the non-renewable resources reserves such as coal, oil, natural gas reduce day by day, the problem of environmental pollution that people face is day by day serious, photovoltaic generation enjoys the concern in the world, nowadays high-efficiency silicon solar cell is a direction of photovoltaic industry development, be devoted in the industry to improve cell piece conversion efficiency always, wherein, an effective means is exactly improve the effective area of shining light of solar battery sheet, and increase the depth-width ratio of surface electrode grid line, surface shaded coverage rate can be reduced, thus cell piece conversion efficiency can be improved.
Screen printing electrode is one of important process manufacturing crystal silicon solar energy battery at present, this technique now comparative maturity, but metal electrode is because of the restriction of half tone pattern grid line width, causes shading-area comparatively large, and easily produces disconnected grid phenomenon in printing process.Utilize plating mode can produce thinner grid line, therefore become a kind of trend of the grid line making crystal silicon solar energy battery, a kind of technique that traditional utilization plating makes electrode is: after PECVD, carry out lbg, then electroplate, due to SiN
xthickness is less, can cause electroplating rear silicon chip surface and form uneven pattern, another kind of technique is: after PECVD, first carry out spin coating photoresist, exposure imaging, HF or BOE etching, electroplate again, remove photoresist, due to development width and evenness limited, cause the depth-width ratio of grid line lower and grid line consistency is poor.
Summary of the invention
For solving the problem, the invention provides a kind of manufacture method of front electrode of solar battery, the front electrode of solar battery that depth-width ratio numerical value is larger can be produced, reduce surface shaded coverage rate, increase solar battery sheet light-receiving area, thus improve cell photoelectric conversion efficiency.
The manufacture method of a kind of front electrode of solar battery provided by the invention, comprising:
At the antireflective coating surface spin coating photoresist of the silicon chip after making herbs into wool, diffusion and PECVD, form mask;
Utilize laser to carry out ablation fluting to described mask, form the groove of predetermined width;
In described groove, deposit front electrode metal, form front electrode;
Remove described mask.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery, after the described mask of described removal, also comprise:
Described front electrode is annealed.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery,
The described front electrode metal that deposits in described groove comprises:
Utilize photoinduction plating mode plated metal nickel in described groove, form the first electrodeposited coating;
Utilize photoinduction plating mode plated metal copper in described groove, on described first electrodeposited coating, form the second electrodeposited coating;
Utilize displacement reaction mode at described second electrodeposited coating surface deposition argent.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery, the described laser that utilizes carries out ablation fluting to described mask, and the groove forming predetermined width is:
Utilize laser to carry out ablation fluting to described mask, form the groove that width range is 20 microns to 30 microns.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery, the described surface spin coating of the antireflective coating at the silicon chip after making herbs into wool, diffusion and PECVD photoresist is:
At the photoresist that the antireflective coating surface spin coating thickness range of the silicon chip after making herbs into wool, diffusion and PECVD is 18 microns to 25 microns.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery, also comprise before plated metal nickel in described groove at the described photoinduction plating mode that utilizes:
The temperature range arranging the electroplate liquid of described plated metal nickel is 30 DEG C to 40 DEG C, and pH value range is 3 to 5, and current range is 0.5 ampere to 1 ampere, and voltage range is 1.3 volts to 1.5 volts, and electroplating time scope is 5 minutes to 10 minutes.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery, also comprise before plated metal copper in described groove at the described photoinduction plating mode that utilizes:
The temperature range arranging the electroplate liquid of described plated metal copper is 40 DEG C to 50 DEG C, and pH value is not more than 1, and current range is 2 amperes to 3 amperes, and voltage range is 1.0 volts to 1.3 volts, and electroplating time scope is 15 minutes to 25 minutes.
Preferably, in the manufacture method of above-mentioned front electrode of solar battery, also comprised before described second electrodeposited coating surface deposition argent in the described displacement reaction mode that utilizes:
The temperature range arranging described plated metal silver is 35 DEG C to 40 DEG C, and range of reaction temperature is 4 minutes to 6 minutes.
In the manufacture method of above-mentioned front electrode of solar battery provided by the invention, due to the antireflective coating surface spin coating photoresist first at the silicon chip after making herbs into wool, diffusion and PECVD, form mask; Recycling laser carries out ablation fluting to described mask, forms the groove of predetermined width; Then in described groove, deposit front electrode metal, form front electrode; Finally remove described mask.Highly larger electrode can be made owing to utilizing photoresist, and utilize lbg can make the less groove of width to form the less electrode of width, therefore, it is possible to produce the larger front electrode of solar battery of depth-width ratio numerical value, reduce surface shaded coverage rate, increase solar battery sheet light-receiving area, thus improve cell photoelectric conversion efficiency.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The schematic diagram of the manufacture method of the first front electrode of solar battery that Fig. 1 provides for the embodiment of the present application;
The schematic diagram of the manufacture method of the second front electrode of solar battery that Fig. 2 provides for the embodiment of the present application;
The schematic diagram of the first step of the second front electrode of solar battery that Fig. 3 provides for the embodiment of the present application;
The schematic diagram of the second step of the second front electrode of solar battery that Fig. 4 provides for the embodiment of the present application,
The schematic diagram of the 3rd step of the second front electrode of solar battery that Fig. 5 provides for the embodiment of the present application;
The schematic diagram of the 4th step of the second front electrode of solar battery that Fig. 6 provides for the embodiment of the present application.
Embodiment
Core concept of the present invention is the manufacture method providing a kind of front electrode of solar battery, the front electrode of solar battery that depth-width ratio numerical value is larger can be produced, reduce surface shaded coverage rate, increase solar battery sheet light-receiving area, thus improve cell photoelectric conversion efficiency.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The manufacture method of the first front electrode of solar battery that the embodiment of the present application provides as shown in Figure 1, the schematic diagram of the manufacture method of the first front electrode of solar battery that Fig. 1 provides for the embodiment of the present application.The method comprises the steps:
S1: at the antireflective coating surface spin coating photoresist of the silicon chip after making herbs into wool, diffusion and PECVD, form mask;
In this step, the thickness of photoresist can be arranged to than value larger in prior art, utilize and reach to the adjustment of spin coating proceeding the object regulated spin coating thickness, the electrode that the height that finally can be formed is larger.
S2: utilize laser to carry out ablation fluting to described mask, forms the groove of predetermined width;
In this step, can according to designed grid line size, by the adjustment of the parameter to laser, the predetermined width of this groove is made into than value less in prior art, also can regulates the degree of depth of ablation fluting in addition, finally can form the less electrode of width, thus make the depth-width ratio of electrode larger, surface shaded coverage rate can be reduced, increase solar battery sheet light-receiving area, and then improve cell photoelectric conversion efficiency.
S3: deposit front electrode metal in described groove, forms front electrode;
In this step, because the depth-width ratio of the groove of the first two step formation is comparatively large, the depth-width ratio of the front electrode of therefore this step formation is larger, can improve the photoelectric conversion efficiency of battery.
S4: remove described mask.
In this step, the liquid that removes photoresist specifically can be utilized to remove mask.
In the manufacture method of the first front electrode of solar battery above-mentioned that the embodiment of the present application provides, due to the antireflective coating surface spin coating photoresist first at the silicon chip after making herbs into wool, diffusion and PECVD, form mask; Recycling laser carries out ablation fluting to described mask, forms the groove of predetermined width; Then utilize photoinduction plating mode to deposit front electrode metal in described groove, form front electrode; Finally remove described mask, therefore, it is possible to produce the larger front electrode of solar battery of depth-width ratio numerical value, reduce surface shaded coverage rate, increase solar battery sheet light-receiving area, thus improve cell photoelectric conversion efficiency.
As another embodiment, in order to make the electrical property of the described front electrode of formation better, also can comprise the steps: to anneal to described front electrode after above-mentioned steps S4.Through this annealing process, each atom in front electrode gets back to original position, no longer includes skew, this makes it possible to make the electrical property of front electrode to be enhanced.Certainly, this step is the mode strengthening front electrode electrical property, is a kind of preferred version, if do not have this step, does not also affect the realization of the first manufacture method above-mentioned.
As another embodiment, in the manufacture method of the first front electrode of solar battery above-mentioned, in order to the performance of the front electrode making making is better, the described front electrode metal that deposits in described groove comprises the steps: to utilize photoinduction plating mode plated metal nickel in described groove, forms the first electrodeposited coating; Utilize photoinduction plating mode plated metal copper in described groove, on described first electrodeposited coating, form the second electrodeposited coating; Utilize displacement reaction mode at described second electrodeposited coating surface deposition argent.It should be noted that, this just makes an optimal way of front electrode, and is not the mode that the first manufacture method must use.
In any one embodiment above-mentioned, the better effects if of slotting to make laser ablation, following concrete scheme can be adopted: the described laser that utilizes carries out ablation fluting to described mask, the groove forming predetermined width is: utilize laser to carry out ablation fluting to described mask, form the groove that width range is 20 microns to 30 microns, this scheme can make the width of groove less, thus better avoids being formed sunlight blocking, and improves conversion efficiency.It should be noted that, this is a preferred version in the manufacture method of the first front electrode of solar battery above-mentioned, if do not take this preferred version also can not affect the realization of first method.
Further, the described surface spin coating of the antireflective coating at the silicon chip after making herbs into wool, diffusion and PECVD photoresist is: the photoresist at the antireflective coating surface spin coating thickness range of the silicon chip after making herbs into wool, diffusion and PECVD being 18 microns to 25 microns.Utilize the height of the spin coating proceeding of photoresist to the final front electrode formed to control, the photoresist forming this thickness can ensure that the height of the front electrode be made into is larger, improves depth-width ratio, improves battery conversion efficiency.
Further, in order to make the deposition effect of front electrode better, optionally, also comprise before plated metal nickel in described groove at the described photoinduction plating mode that utilizes: the temperature range arranging the electroplate liquid of described plated metal nickel is 30 DEG C to 40 DEG C, pH value range is 3 to 5, current range is 0.5 ampere to 1 ampere, and voltage range is 1.3 volts to 1.5 volts, and electroplating time scope is 5 minutes to 10 minutes.
Further, as another possibility, also comprise before plated metal copper in described groove at the described photoinduction plating mode that utilizes: the temperature range arranging the electroplate liquid of described plated metal copper is 40 DEG C to 50 DEG C, pH value is not more than 1, current range is 2 amperes to 3 amperes, voltage range is 1.0 volts to 1.3 volts, and electroplating time scope is 15 minutes to 25 minutes.
Further, as another possibility, also comprised before described second electrodeposited coating surface deposition argent in the described displacement reaction mode that utilizes: the temperature range arranging described plated metal silver is 35 DEG C to 40 DEG C, and range of reaction temperature is 4 minutes to 6 minutes.
A concrete example is as follows: when lbg width is 30 μm, nickel plating pH is 4, and bath temperature is 35 DEG C, and electric current is 0.5A, voltage 1.3V, time 8min; Copper facing pH is 1, temperature 45 C, electric current 3A, voltage 1.3V, time 15min; Silver solution temperature is 35 DEG C, and time 4min, the height of the grid line obtained is 20 μm.
It should be noted that, the three groups of concrete schemes described in the mode of going forward one by one of above-mentioned deposition front electrode are preferred version, this can on the basis of the manufacture method of the first solar cell, produce the better front electrode of electrical property, if and do not adopt these preferred versions, also can't affect the specific implementation of the manufacture method of the first solar cell above-mentioned.
The manufacture method of the second front electrode of solar battery that the embodiment of the present application provides as shown in Figure 2, the schematic diagram of the manufacture method of the second front electrode of solar battery that Fig. 2 provides for the embodiment of the present application.The method comprises the steps:
A1: the photoresist at the antireflective coating surface spin coating thickness range of the silicon chip after making herbs into wool, diffusion and PECVD being 18 microns to 25 microns, forms mask;
Concrete, the schematic diagram of the first step of the second front electrode of solar battery provided for the embodiment of the present application with reference to figure 3, Fig. 3, face is diffusion layer 2, antireflective coating 3 successively on a silicon substrate 1, this step is spin coating photoresist on antireflective coating 3, forms mask 4.
A2: utilize laser to carry out ablation fluting to described mask, forms the groove that width range is 20 microns to 30 microns;
Concrete, the schematic diagram of the second step of the second front electrode of solar battery provided for the embodiment of the present application with reference to figure 4, Fig. 4, profit laser ablation mask 4 shown with arrows and antireflective coating 3, formation groove.
A3: utilize photoinduction plating mode plated metal nickel in described groove, form the first electrodeposited coating, utilize photoinduction plating mode plated metal copper in described groove, the second electrodeposited coating is formed on described first electrodeposited coating, utilize displacement reaction mode at described second electrodeposited coating surface deposition argent, form front electrode;
Concrete, the schematic diagram of the 3rd step of the second front electrode of solar battery provided for the embodiment of the present application with reference to figure 5, Fig. 5, as shown by arrows, deposition formation front electrode 5.
In this step, the height of grid line can be controlled by change plating and displacement reaction time.
A4: remove described mask;
Concrete, the schematic diagram of the 4th step of the second front electrode of solar battery provided for the embodiment of the present application with reference to figure 6, Fig. 6, removes mask 4.
A5: described front electrode is annealed.
It should be noted that, the grid line width of silk screen printing of the prior art 50 μm, height about 10 μm, and the said method adopting the embodiment of the present application to provide, width 20-30 μm can be obtained, the grid line of height about 20 μm, reduces surface shaded coverage rate, the final energy conversion efficiency improving solar cell.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. a manufacture method for front electrode of solar battery, is characterized in that, comprising:
At the antireflective coating surface spin coating photoresist of the silicon chip after making herbs into wool, diffusion and PECVD, form mask;
Utilize laser to carry out ablation fluting to described mask, form the groove of predetermined width;
In described groove, deposit front electrode metal, form front electrode;
Remove described mask.
2. the manufacture method of front electrode of solar battery according to claim 1, is characterized in that, after the described mask of described removal, also comprises:
Described front electrode is annealed.
3. the manufacture method of front electrode of solar battery according to claim 1, is characterized in that,
The described front electrode metal that deposits in described groove comprises:
Utilize photoinduction plating mode plated metal nickel in described groove, form the first electrodeposited coating;
Utilize photoinduction plating mode plated metal copper in described groove, on described first electrodeposited coating, form the second electrodeposited coating;
Utilize displacement reaction mode at described second electrodeposited coating surface deposition argent.
4. the manufacture method of the front electrode of solar battery according to any one of claim 1-3, is characterized in that, the described laser that utilizes carries out ablation fluting to described mask, and the groove forming predetermined width is:
Utilize laser to carry out ablation fluting to described mask, form the groove that width range is 20 microns to 30 microns.
5. the manufacture method of front electrode of solar battery according to claim 4, is characterized in that, the described surface spin coating of the antireflective coating at the silicon chip after making herbs into wool, diffusion and PECVD photoresist is:
At the photoresist that the antireflective coating surface spin coating thickness range of the silicon chip after making herbs into wool, diffusion and PECVD is 18 microns to 25 microns.
6. the manufacture method of front electrode of solar battery according to claim 3, is characterized in that, also comprises in described groove at the described photoinduction plating mode that utilizes before plated metal nickel:
The temperature range arranging the electroplate liquid of described plated metal nickel is 30 DEG C to 40 DEG C, and pH value range is 3 to 5, and current range is 0.5 ampere to 1 ampere, and voltage range is 1.3 volts to 1.5 volts, and electroplating time scope is 5 minutes to 10 minutes.
7. the manufacture method of front electrode of solar battery according to claim 6, is characterized in that, also comprises in described groove at the described photoinduction plating mode that utilizes before plated metal copper:
The temperature range arranging the electroplate liquid of described plated metal copper is 40 DEG C to 50 DEG C, and pH value is not more than 1, and current range is 2 amperes to 3 amperes, and voltage range is 1.0 volts to 1.3 volts, and electroplating time scope is 15 minutes to 25 minutes.
8. the manufacture method of front electrode of solar battery according to claim 7, is characterized in that, also comprises before described second electrodeposited coating surface deposition argent in the described displacement reaction mode that utilizes:
The temperature range arranging described plated metal silver is 35 DEG C to 40 DEG C, and range of reaction temperature is 4 minutes to 6 minutes.
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| WO2021218817A1 (en) * | 2020-04-26 | 2021-11-04 | 蔡永安 | Solar cell metal electrode and preparation method therefor, and mask |
| CN115274884A (en) * | 2022-08-10 | 2022-11-01 | 无锡爱尔华光电科技有限公司 | Preparation process of silicon-based solar cell metal electrode |
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| WO2023124614A1 (en) * | 2021-12-31 | 2023-07-06 | 隆基绿能科技股份有限公司 | Metal electrode of solar cell, preparation method therefor, and solar cell |
| WO2023142840A1 (en) * | 2022-01-27 | 2023-08-03 | 隆基绿能科技股份有限公司 | Solar cell and preparation method therefor |
| CN115274884A (en) * | 2022-08-10 | 2022-11-01 | 无锡爱尔华光电科技有限公司 | Preparation process of silicon-based solar cell metal electrode |
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