CN105388712A - Low-corrosive photosensitive film cleaning liquid - Google Patents
Low-corrosive photosensitive film cleaning liquid Download PDFInfo
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- CN105388712A CN105388712A CN201510848566.4A CN201510848566A CN105388712A CN 105388712 A CN105388712 A CN 105388712A CN 201510848566 A CN201510848566 A CN 201510848566A CN 105388712 A CN105388712 A CN 105388712A
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Abstract
The invention provides a low-corrosive photosensitive film cleaning liquid. The cleaning liquid comprises pentaerythritol, potassium hydroxide, organic amine, an anticorrosive agent and a solvent. The cleaning liquid provided by the invention has strong capability of cleaning a photosensitive film and relatively low corrosivity for a semiconductor wafer pattern and a base material.
Description
Technical field
The present invention relates to semiconductor technology manufacturing technology field, particularly relate to a kind of light-sensitive surface cleaning fluid.
Background technology
Photosensitive material is a kind of emerging material, is widely used in semiconductor processing industry.In common semiconductor fabrication process, by forming the mask of light-sensitive surface on the surface of some materials, after exposure, carrying out Graphic transitions, after obtaining the figure needed, before carrying out next process, needing to peel off residual light-sensitive surface.Require in this process to remove unwanted light-sensitive surface completely, any base material can not be corroded simultaneously.
At present, light-sensitive surface cleaning fluid, primarily of compositions such as polar organic solvent, highly basic and/or water, by immersing in cleaning fluid by semiconductor wafer or utilizing cleaning fluid to rinse semiconductor wafer, removes the light-sensitive surface on semiconductor wafer.As JP1998239865 discloses a kind of cleaning fluid, its composition is Tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO) (DMSO), 1,3 '-dimethyl-2-imidazolidinone (DMI) and water.Wafer is immersed in this cleaning fluid, at 50 ~ 100 DEG C, remove the light-sensitive surface of more than 20 μm in metal and dielectric substrate; It is slightly high to the corrosion of semiconductor wafer substrate, and can not remove the light-sensitive surface on semiconductor wafer completely, and cleansing power is not enough; US5529887 forms alkaline cleaning fluid by potassium hydroxide (KOH), alkylene glycol monoalkyl ether, soluble fluoride and water etc., is immersed by wafer in this cleaning fluid, removes the thick film light-sensitive surface in metal and dielectric substrate at 40 ~ 90 DEG C.It is higher to the corrosion of semiconductor wafer substrate; US5091103 discloses 1-METHYLPYRROLIDONE, 1, the cleaning fluid of 2-propylene glycol and Tetramethylammonium hydroxide, the light-sensitive surface crossing (hardbake) through high bake temperature is removed at 105 ~ 125 DEG C, it is characterized in that not containing water, operating temperature is high, once cleaning fluid is mixed into water, it all rises to the corrosion rate of metallic aluminium and copper.
As can be seen here, can grease effectively on dissolving film and dirt, not leaving over any material of being harmful to film and not affecting base material matter is the privileged direction that such light-sensitive surface cleaning fluid makes great efforts to improve.
Summary of the invention
The technical problem to be solved in the present invention is exactly that the cleansing power that exists for existing light-sensitive surface cleaning fluid is not enough or to wafer pattern and the stronger defect of base material corrosivity, and provides a kind of light-sensitive surface cleansing power strong and to semiconductor wafer pattern and the lower light-sensitive surface cleaning fluid of base material corrosivity.
For solving the problems of the technologies described above, the invention provides a kind of novel light-sensitive surface cleaning fluid, it comprises pentaerythrite, potassium hydroxide, organic amine, anticorrosive and solvent.
Wherein, the mass percent of pentaerythrite is 1-10%, and the mass percent of potassium hydroxide is 1-5%, and the mass percent of organic amine is 0.5-25%, anticorrosive 1-3%, and solvent is She's amount, and each constituent mass number percent sum is 100%.
Further, the mass percent of pentaerythrite is 5%, and the mass percent of potassium hydroxide is 5%, and the mass percent of organic amine is 20%, anticorrosive 2%, and solvent is 68%.
Wherein, described organic amine is for being selected from least one compound of the group comprising 1,5-dimethylhexylamine, isopropanolamine, m-toluidine, n-methylethanolamine, para-fluoroaniline, diethyl ethanolamine, 2-aminoethyl amino ethanol, aminoethyl piperazine, aminopropyl piperazine, 1-(2-hydroxyethyl) piperazine, 1-amino-4-methyl piperazine, 2-methyl piperazine, 1-methyl piperazine, 1-benzyl diethylenediamine, 2-phenylpiperazine, 1-amino piperidine and 1-aminomethylpiperidine.
Wherein, described solvent is one or more in sulfoxide, sulfone, imidazolidinone, imidazolone, alcohol, ether, acid amides.
Wherein, described sulfoxide is dimethyl sulfoxide (DMSO); Described sulfone is sulfolane; Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone; Described imidazolone is DMI; Described acid amides is dimethyl formamide, dimethyl acetamide; Described alcohol is propylene glycol, diethylene glycol; Ether is glycol ether or propylene glycol.
Wherein, described glycol ether is ethylene glycol ethyl ether, butyl glycol ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether; Described propylene glycol is propylene-glycol ethyl ether, propandiol butyl ether, dipropylene glycol monomethyl ether, DPE, Dipropylene glycol mono-n-butyl Ether.
Described anticorrosive is by O ', O '-Diphenyl disulfide is for phosphoric acid-N, and TMSDEA N diethylamine and ω, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane are formed, and both quality are 1: 3.
Wherein, described O ', O '-Diphenyl disulfide is for phosphoric acid-N, and the preparation method of TMSDEA N diethylamine is specially:
By 22.2g phosphorus pentasulfide (0.1mol), 37.6g phenol (0.4mol) joins in 250mL there-necked flask, adds 70mL toluene and makes solvent; Gradually temperature is elevated to about 100 DEG C reaction 45min while stirring; Heat up until backflow again, backflow 3h, in course of reaction, solid fades away; Solution is slightly cold, and add a small amount of activated charcoal boiling decoloring, filter while hot, filtrate is cooled to room temperature; Be transferred in beaker by gained filtrate, water-bath cooling also under agitation dropwise drips 22mL diethylamine (0.2mol), and reaction system releases a large amount of heat, liquid color gradually becomes Chinese red, use glass bar rapid stirring, have precipitation to produce, standing at room temperature places a night; Filtration under diminished pressure, by toluene wash to white, product is white needle-like crystals; Re crystallization from toluene, filtration under diminished pressure, vacuum drying, obtains white crystal, to obtain final product.
Wherein, the preparation method of described ω, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane is specially:
Take 0.11mol o-phenylenediamine and 0.05mol fat diacid respectively, in mortar, fully grinding makes it mix, and is transferred in three-neck flask.Add nitration mixture, logical nitrogen, heating reflux reaction under mechanical raking.TLC tracking and monitoring is to reacting end, and about 10h, pours in 250mL beaker, leaves standstill cooling, regulates pH=7 with strong aqua.Hold over night at 4 DEG C, suction filtration is dry, and gained crude product methanol/water recrystallization, obtains sterling.
Beneficial effect of the present invention:
Light-sensitive surface cleaning fluid light-sensitive surface cleansing power provided by the invention strong and to semiconductor wafer pattern and base material corrosivity lower.
Embodiment
A novel light-sensitive surface cleaning fluid, it comprises pentaerythrite, potassium hydroxide, organic amine, anticorrosive and solvent.
Wherein, the mass percent of pentaerythrite is 1-10%, and the mass percent of potassium hydroxide is 1-5%, and the mass percent of organic amine is 0.5-25%, anticorrosive 1-3%, and solvent is She's amount, and each constituent mass number percent sum is 100%.
Further, the mass percent of pentaerythrite is 5%, and the mass percent of potassium hydroxide is 5%, and the mass percent of organic amine is 20%, anticorrosive 2%, and solvent is 68%.
Wherein, described machine amine is for being selected from least one compound of the group comprising 1,5-dimethylhexylamine, isopropanolamine, m-toluidine, n-methylethanolamine, para-fluoroaniline, diethyl ethanolamine, 2-aminoethyl amino ethanol, aminoethyl piperazine, aminopropyl piperazine, 1-(2-hydroxyethyl) piperazine, 1-amino-4-methyl piperazine, 2-methyl piperazine, 1-methyl piperazine, 1-benzyl diethylenediamine, 2-phenylpiperazine, 1-amino piperidine and 1-aminomethylpiperidine.
Wherein, described solvent is one or more in sulfoxide, sulfone, imidazolidinone, imidazolone, alcohol, ether, acid amides.
Wherein, described sulfoxide is dimethyl sulfoxide (DMSO); Described sulfone is sulfolane; Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone; Described imidazolone is DMI; Described acid amides is dimethyl formamide, dimethyl acetamide; Described alcohol is propylene glycol, diethylene glycol; Ether is glycol ether or propylene glycol.
Wherein, described glycol ether is ethylene glycol ethyl ether, butyl glycol ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether; Described propylene glycol is propylene-glycol ethyl ether, propandiol butyl ether, dipropylene glycol monomethyl ether, DPE, Dipropylene glycol mono-n-butyl Ether.
Described anticorrosive is by O ', O '-Diphenyl disulfide is for phosphoric acid-N, and TMSDEA N diethylamine and ω, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane are formed, and both quality are 1: 3.
Wherein, described O ', O '-Diphenyl disulfide is for phosphoric acid-N, and the preparation method of TMSDEA N diethylamine is specially:
By 22.2g phosphorus pentasulfide (0.1mol), 37.6g phenol (0.4mol) joins in 250mL there-necked flask, adds 70mL toluene and makes solvent; Gradually temperature is elevated to about 100 DEG C reaction 45min while stirring; Heat up until backflow again, backflow 3h, in course of reaction, solid fades away; Solution is slightly cold, and add a small amount of activated charcoal boiling decoloring, filter while hot, filtrate is cooled to room temperature; Be transferred in beaker by gained filtrate, water-bath cooling also under agitation dropwise drips 22mL diethylamine (0.2mol), and reaction system releases a large amount of heat, liquid color gradually becomes Chinese red, use glass bar rapid stirring, have precipitation to produce, standing at room temperature places a night; Filtration under diminished pressure, by toluene wash to white, product is white needle-like crystals; Re crystallization from toluene, filtration under diminished pressure, vacuum drying, obtains white crystal, to obtain final product.
Wherein, the preparation method of described ω, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane is specially:
Take 0.11mol o-phenylenediamine and 0.05mol fat diacid respectively, in mortar, fully grinding makes it mix, and is transferred in three-neck flask.Add nitration mixture, logical nitrogen, heating reflux reaction under mechanical raking.TLC tracking and monitoring is to reacting end, and about 10h, pours in 250mL beaker, leaves standstill cooling, regulates pH=7 with strong aqua.Hold over night at 4 DEG C, suction filtration is dry, and gained crude product methanol/water recrystallization, obtains sterling.
Below adopt embodiment to describe embodiments of the present invention in detail, to the present invention, how application technology means solve technical matters whereby, and the implementation procedure reaching technique effect can fully understand and implement according to this.
Embodiment 1
Embodiment 1O ', O '-Diphenyl disulfide for phosphoric acid-N, the preparation of TMSDEA N diethylamine
By 22.2g phosphorus pentasulfide (0.1mol), 37.6g phenol (0.4mol) joins in 250mL there-necked flask, adds 70mL toluene and makes solvent; Gradually temperature is elevated to about 100 DEG C reaction 45min while stirring; Heat up until backflow again, backflow 3h, in course of reaction, solid fades away; Solution is slightly cold, and add a small amount of activated charcoal boiling decoloring, filter while hot, filtrate is cooled to room temperature; Be transferred in beaker by gained filtrate, water-bath cooling also under agitation dropwise drips 22mL diethylamine (0.2mol), and reaction system releases a large amount of heat, liquid color gradually becomes Chinese red, use glass bar rapid stirring, have precipitation to produce, standing at room temperature places a night; Filtration under diminished pressure, by toluene wash to white, product is white needle-like crystals; Re crystallization from toluene, filtration under diminished pressure, vacuum drying, obtains white crystal, to obtain final product.
The preparation of embodiment 2 ω, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane
Take 0.11mol o-phenylenediamine and 0.05mol fat diacid respectively, in mortar, fully grinding makes it mix, and is transferred in three-neck flask.Add nitration mixture, logical nitrogen, heating reflux reaction under mechanical raking.TLC tracking and monitoring is to reacting end, and about 10h, pours in 250mL beaker, leaves standstill cooling, regulates pH=7 with strong aqua.Hold over night at 4 DEG C, suction filtration is dry, and gained crude product methanol/water recrystallization, obtains sterling.
Embodiment 3
By O ' prepared by N-ethyl carbamic acid ethyl ester 25g, ethylene glycol monobutyl ether 8g, gallic acid 4g, organic solvent dimethyl sulfoxide (DMSO) 90g and embodiment 1, O '-Diphenyl disulfide is for phosphoric acid-N, the ω of TMSDEA N diethylamine 4g, embodiment 2 preparation, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane 4g mixes to clarification, obtains cleaning fluid.
All above-mentioned this intellecture properties of primary enforcement, not setting restriction this new product of other forms of enforcement and/or new method.Those skilled in the art will utilize this important information, and foregoing is revised, to realize similar implementation status.But all modifications or transformation belong to the right of reservation based on new product of the present invention.
The above is only preferred embodiment of the present invention, and be not restriction the present invention being made to other form, any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the Equivalent embodiments of equivalent variations.But everyly do not depart from technical solution of the present invention content, any simple modification, equivalent variations and the remodeling done above embodiment according to technical spirit of the present invention, still belong to the protection domain of technical solution of the present invention.
Claims (9)
1. a low-corrosiveness light-sensitive surface cleaning fluid, is characterized in that: comprise pentaerythrite, potassium hydroxide, organic amine, anticorrosive and solvent.
2. low-corrosiveness light-sensitive surface cleaning fluid as claimed in claim 1, it is characterized in that: the mass percent of pentaerythrite is 1-10%, the mass percent of potassium hydroxide is 1-5%, the mass percent of organic amine is 0.5-25%, anticorrosive 1-3%, solvent is She's amount, and each constituent mass number percent sum is 100%.
3. low-corrosiveness light-sensitive surface cleaning fluid as claimed in claim 1 or 2, it is characterized in that: the mass percent of pentaerythrite is 5%, the mass percent of potassium hydroxide is 5%, and the mass percent of organic amine is 20%, anticorrosive 2%, and solvent is 68%.
4. the low-corrosiveness light-sensitive surface cleaning fluid as described in claims 1 to 3, it is characterized in that: described machine amine is for being selected from least one compound of the group comprising 1,5-dimethylhexylamine, isopropanolamine, m-toluidine, n-methylethanolamine, para-fluoroaniline, diethyl ethanolamine, 2-aminoethyl amino ethanol, aminoethyl piperazine, aminopropyl piperazine, 1-(2-hydroxyethyl) piperazine, 1-amino-4-methyl piperazine, 2-methyl piperazine, 1-methyl piperazine, 1-benzyl diethylenediamine, 2-phenylpiperazine, 1-amino piperidine and 1-aminomethylpiperidine.
5. the low-corrosiveness light-sensitive surface cleaning fluid as described in Claims 1-4, is characterized in that: described solvent is one or more in sulfoxide, sulfone, imidazolidinone, imidazolone, alcohol, ether, acid amides.
6. the low-corrosiveness light-sensitive surface cleaning fluid as described in claim 1 to 5, is characterized in that: described sulfoxide is dimethyl sulfoxide (DMSO); Described sulfone is sulfolane; Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone; Described imidazolone is DMI; Described acid amides is dimethyl formamide, dimethyl acetamide; Described alcohol is propylene glycol, diethylene glycol; Ether is glycol ether or propylene glycol.
7. the etchant resist remover as described in claim 1 to 6, it is characterized in that: described anticorrosive is by the O ' shown in formula 2, O '-Diphenyl disulfide is for phosphoric acid-N, ω shown in TMSDEA N diethylamine and formula 1, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane is formed, wherein, n=8, both quality are 1: 3.
8. the low-corrosiveness light-sensitive surface clean-out system as described in claim 1 to 7, is characterized in that: described O ', O '-Diphenyl disulfide is for phosphoric acid-N, and the preparation method of TMSDEA N diethylamine is specially:
By 22.2g phosphorus pentasulfide (0.1mol), 37.6g phenol (0.4mol) joins in 250mL there-necked flask, adds 70mL toluene and makes solvent; Gradually temperature is elevated to about 100 DEG C reaction 45min while stirring; Heat up until backflow again, backflow 3h, in course of reaction, solid fades away; Solution is slightly cold, and add a small amount of activated charcoal boiling decoloring, filter while hot, filtrate is cooled to room temperature; Be transferred in beaker by gained filtrate, water-bath cooling also under agitation dropwise drips 22mL diethylamine (0.2mol), and reaction system releases a large amount of heat, liquid color gradually becomes Chinese red, use glass bar rapid stirring, have precipitation to produce, standing at room temperature places a night; Filtration under diminished pressure, by toluene wash to white, product is white needle-like crystals; Re crystallization from toluene, filtration under diminished pressure, vacuum drying, obtains white crystal, to obtain final product.
9. the low-corrosiveness light-sensitive surface clean-out system as described in claim 1 to 8, is characterized in that: the preparation method of described ω, ω '-bis-(benzimidazolyl-2 radicals-Ji) alkane is specially:
Take 0.11mol o-phenylenediamine and 0.05mol fat diacid respectively, in mortar, fully grinding makes it mix, and is transferred in three-neck flask.Add nitration mixture, logical nitrogen, heating reflux reaction under mechanical raking.TLC tracking and monitoring is to reacting end, and about 10h, pours in 250mL beaker, leaves standstill cooling, regulates pH=7 with strong aqua.Hold over night at 4 DEG C, suction filtration is dry, and gained crude product methanol/water recrystallization, obtains sterling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510848566.4A CN105388712A (en) | 2015-11-28 | 2015-11-28 | Low-corrosive photosensitive film cleaning liquid |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510848566.4A CN105388712A (en) | 2015-11-28 | 2015-11-28 | Low-corrosive photosensitive film cleaning liquid |
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| Publication Number | Publication Date |
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| CN105388712A true CN105388712A (en) | 2016-03-09 |
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| CN201510848566.4A Pending CN105388712A (en) | 2015-11-28 | 2015-11-28 | Low-corrosive photosensitive film cleaning liquid |
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Application publication date: 20160309 |