CN105374903B - Al＜x＞Ga＜1-x＞N-based ultraviolet detector and preparation method - Google Patents
Al＜x＞Ga＜1-x＞N-based ultraviolet detector and preparation method Download PDFInfo
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- CN105374903B CN105374903B CN201510967933.2A CN201510967933A CN105374903B CN 105374903 B CN105374903 B CN 105374903B CN 201510967933 A CN201510967933 A CN 201510967933A CN 105374903 B CN105374903 B CN 105374903B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 35
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 4
- 239000011435 rock Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000008719 thickening Effects 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Disclosed are an Al＜x＞Ga＜1-x＞N-based ultraviolet detector and a preparation method. The Al＜x＞Ga＜1-x＞N-based ultraviolet detector comprises a substrate the material of which is sapphire, silicon, silicon carbide, gallium nitride or gallium arsenide, an N-type ohmic contact layer prepared on the substrate, an active layer prepared on one side of the N-type ohmic contact layer, wherein a table top is formed on the other side of the N-type ohmic contact layer, a P-type ohmic contact layer prepared on the active layer, a heavily-doped P-type ohmic contact cover layer prepared on the P-type ohmic contact layer, a P-type ohmic contact transparent electrode prepared on the heavily-doped P-type ohmic contact cover layer, an N-type ohmic contact electrode prepared on the table top of the N-type ohmic contact layer, and a P-type thickening electrode prepared on the P-type ohmic contact transparent electrode, wherein the area of the P-type thickening electrode is far less than the area of the P-type ohmic contact transparent electrode.
Description
Technical field
The invention belongs to microelectronics technology, is related to semiconductor material growing and device fabrication techniques, specifically
A kind of AlxGa1-xN base ultraviolet detectors and preparation method.
Background technology
Used as third generation quasiconductor, gallium nitride (GaN) and its series material (include aluminium nitride, aluminum gallium nitride, indium nitride, indium
Gallium nitrogen, aluminum indium gallium nitrogen) so that its energy gap is big, spectral region width (covering ultraviolet band, visible light wave range, infrared band) exists
Have huge using value in optoelectronics and microelectronics domain, using its wide direct band gap can prepare indigo plant, green glow and
The opto-electronic device of ultraviolet light, additionally, because the features such as its electronics saturation drift velocity is high, heat conductivility is good is suitable for preparing
High frequency, high-power electronic device.AlGaN base ultraviolet detectors are a kind of very important GaN base opto-electronic devices, pre- in guided missile
Police, the cigarette detection of rocket plumage, Ultraviolet Communication, chemical and biological weapons detection, aircraft guidance, spacecraft, fire monitoring etc. are civilian, military
Field suffers from important using value.Compared with silicon substrate ultraviolet detector, GaN base ultraviolet detector is due to visible ray
Blind, quantum efficiency is high, can work under high temperature and severe rugged environment etc. incomparable advantage, can do in actual applications
To false alarm rate it is low, sensitivity is high, strong antijamming capability, greatly receives the concern of people.
Have been achieved at present remarkable progress in the world in terms of AlGaN base ultraviolet detectors, but still there is detection
The leakage current of device further cannot suppress, the problem for causing corresponding responsiveness to be also difficult to further be lifted.Therefore,
The leakage current for how further reducing AlGaN base ultraviolet detectors becomes the Important Problems of many seminar's researchs.
The content of the invention
It is an object of the invention to propose a kind of AlxGa1-xN base ultraviolet detectors and preparation method, this ultraviolet detector
Leakage current effectively reduced, responsiveness effectively improves.
The present invention provides a kind of AlxGa1-xN base ultraviolet detectors, including：
One substrate, the material of the substrate is sapphire, silicon, carborundum, gallium nitride or GaAs；
One N-type ohmic contact layer, the N-type ohmic contact layer are produced on substrate；
One active layer, the active layer are produced on the side on N-type ohmic contact layer, another on the N-type ohmic contact layer
Side forms a table top；
One p-type ohmic contact layer, the p-type ohmic contact layer are produced on active layer；
One heavily doped p-type Ohmic contact cap rock, the heavily doped p-type Ohmic contact fabrication of cover coat is on p-type ohmic contact layer；
One p-type Ohmic contact transparency electrode, the p-type Ohmic contact transparency electrode are produced on heavily doped p-type Ohmic contact cap rock
On；
One N-type Ohm contact electrode, the N-type Ohm contact electrode are produced on the table top of N-type ohmic contact layer；
One p-type thickeies electrode, and the p-type thickeies electrode fabrication in p-type Ohmic contact transparency electrode, and its area is much smaller than P
The area of type Ohmic contact transparency electrode.
The present invention also provides a kind of AlxGa1-xThe preparation method of N base ultraviolet detectors, comprises the steps：
Step 1：Grow N-type ohmic contact layer, active layer, p-type ohmic contact layer and heavily doped p-type on a substrate successively
Ohmic contact cap rock；
Step 2：Side on heavily doped p-type Ohmic contact cap rock etches downwards, and etching depth rests on N-type ohm and connects
Within contact layer, the side on the N-type ohmic contact layer forms a table top；
Step 3：The growing P-type Ohmic contact transparency electrode on heavily doped p-type Ohmic contact cap rock, forms a substrate；
Step 4：Substrate is carried out into quick thermal annealing process, by p-type Ohmic contact transparency electrode annealed alloy, P is formed
Type Ohmic contact；
Step 5：N-type Ohm contact electrode is made on the table top of N-type ohmic contact layer；
Step 6：P-type is made in p-type Ohmic contact transparency electrode and thickeies electrode, complete to prepare.
The present invention controls remaining carbon impurity concn in ultraviolet detector active layer by changing growth conditionss, and which acts on
In effective control in active layer deep impurity energy level formation, so as to reduce leak channel, reduce the leakage of ultraviolet detector
Electric current, meanwhile, the reduction of deep impurity energy level also effectively reduces the recombination probability of photo-generate electron-hole pair, so as to improve electricity
Extremely to effective electron, the collection in hole, improve the responsiveness characteristic of ultraviolet detector.
Description of the drawings
In order to further illustrate present disclosure, with reference to instantiation and drawings in detail as after, wherein：
Fig. 1 is Al proposed by the present inventionxGa1-xN (x >=0) base ultraviolet detector device architecture schematic diagram.
Fig. 2 is a kind of Al proposed by the present inventionxGa1-xThe preparation method flow chart of N base ultraviolet detectors.
Fig. 3 is the leakage current comparison diagram of ultraviolet detector proposed by the present invention and general ultraviolet detector.
Fig. 4 is the responsiveness size comparison diagram of ultraviolet detector proposed by the present invention and general ultraviolet detector.
Specific embodiment
Refer to shown in Fig. 1, the present invention provides a kind of AlxGa1-xN base ultraviolet detectors, including：
One substrate 10, the material of the substrate 10 is the materials such as sapphire, silicon, carborundum, gallium nitride or GaAs；
One N-type ohmic contact layer 11, the N-type ohmic contact layer 11 make over the substrate 10, the N-type ohmic contact layer 11
Material is N-type AlxGa1-xN, wherein x >=0, its thickness are 0.5-5 μm, and electron concentration is more than 1 × 1018cm-3；
One active layer 12, the active layer 12 are produced on the side on N-type ohmic contact layer 11, the N-type ohmic contact layer 11
On opposite side form a table top 11 ', the material of the active layer 12 is intrinsic AlxGa1-xN, wherein x >=0, electron concentration are less than 1
×1017cm-3, the control of 12 growth conditionss of active layer is Special attention will be given to of the present invention, suitably adjusts growth conditionss, and control should
In layer, the concentration of remaining carbon impurity is less than or equal to 5 × 1016cm-3；
One p-type ohmic contact layer 13, the p-type ohmic contact layer 13 are produced on active layer 12, the p-type ohmic contact layer 13
Material be p-type AlxGa1-xN, wherein x >=0, its hole concentration are more than 1 × 1017cm-3, it is worth emphasizing that provided herein be
Hole concentration, rather than the impurity concentration for mixing, the process may carry out a short annealing process, it is therefore intended that will mix
Impurity enter line activating；
One heavily doped p-type Ohmic contact cap rock 14, the heavily doped p-type Ohmic contact cap rock 14 are produced on p-type ohmic contact layer 13
On；The material of the p-type Ohmic contact cap rock 14 is heavily doped p-type gallium nitride thin layer, the doping content one of its n-type impurity
As be higher than 5 × 1019cm-3, some are even higher than 5 × 1020cm-3, its thickness is 5-80nm；
One p-type Ohmic contact transparency electrode 15, the p-type Ohmic contact transparency electrode 15 are produced on heavily doped p-type Ohmic contact
On cap rock 14, the material of the p-type Ohmic contact transparency electrode 15 is Ni/Au or ITO, and its thickness is less than 20nm；
One N-type Ohm contact electrode 16, the N-type Ohm contact electrode 16 are produced on the table top 11 ' of N-type ohmic contact layer 11
On, the material of the N-type Ohm contact electrode 16 is Ti/Au, Ti/Al/Ti/Au or Ti/Al/Ni/Au, and its thickness is more than p-type Europe
Nurse contacts the thickness of transparency electrode 15；
One p-type thickeies electrode 17, and the p-type thickeies electrode 17 and is produced in p-type Ohmic contact transparency electrode 15, and its area is remote
Less than the area of p-type Ohmic contact transparency electrode 15.
Fig. 2 is referred to, and is combined refering to Fig. 1, the present invention also provides a kind of AlxGa1-xThe preparation side of N base ultraviolet detectors
Method, comprises the steps：
Step 1：Grow N-type ohmic contact layer 11, active layer 12,13 and of p-type ohmic contact layer on a substrate 10 successively
Heavily doped p-type Ohmic contact cap rock 14；
Wherein the material of the N-type ohmic contact layer 11 is N-type AlxGa1-xN, wherein x >=0, its thickness are 0.5-5 μm, electricity
Sub- concentration is more than 1 × 1018cm-3；
Wherein the material of the active layer 12 is intrinsic AlxGa1-xN, wherein x >=0,0.01-2 μm of its thickness, electron concentration is little
In 1 × 1017cm-3, the control of 12 growth conditionss of active layer is Special attention will be given to of the present invention, suitably adjusts growth conditionss, control
The concentration of this layer of remaining carbon impurity is less than or equal to 5 × 1016cm-3；
Wherein the material of the p-type ohmic contact layer 13 is p-type AlxGa1-xN, wherein x >=0, its hole concentration more than 1 ×
1017cm-3, it is worth emphasizing that provided herein is hole concentration, rather than the impurity concentration for mixing, the process may be entered
Short annealing process of row, it is therefore intended that the impurity of incorporation is entered into line activating；
The material of the wherein p-type Ohmic contact cap rock 14 is heavily doped p-type gallium nitride thin layer, and its n-type impurity is mixed
Miscellaneous concentration is typically higher than 5 × 1019cm-3, some are even higher than 5 × 1020cm-3, its thickness is 5-80nm；
Step 2：Side on heavily doped p-type Ohmic contact cap rock 14 etches downwards, and the lithographic method is carved using dry method
Erosion ICP or IBE, etches scope by growing the technology controlling and process such as mask and photoetching, by controlling etching speed and etch period
Etching depth is made to rest within N-type ohmic contact layer 11, the side on the N-type ohmic contact layer 11 forms a table top 11 '；
Step 3：The growing P-type Ohmic contact transparency electrode 15 on heavily doped p-type Ohmic contact cap rock 14, forms a base
Piece, the material of the p-type Ohmic contact transparency electrode 15 is Ni/Au or ITO, and its thickness is less than 20nm；
Step 4：Substrate is carried out into quick thermal annealing process, 15 annealed alloy of p-type Ohmic contact transparency electrode is formed
P-type Ohmic contact；
Step 5：N-type Ohm contact electrode 16, the N-type Ohmic contact are made on the table top 11 ' of N-type ohmic contact layer 11
The material of electrode 16 is Ti/Au, Ti/Al/Ti/Au or Ti/Al/Ni/Au, and its thickness is more than p-type Ohmic contact transparency electrode 15
Thickness；
Step 6：P-type is made in p-type Ohmic contact transparency electrode 15 and thickeies electrode 17, complete to prepare.The present invention is provided
Ultraviolet detector and preparation method thereof by changing growth conditionss, in control ultraviolet detector active layer, remaining carbon impurity is dense
Degree, its role is to the formation of deep impurity energy level in effective control active layer, so as to reduce leak channel, reduces ultraviolet
The leakage current of detector, meanwhile, the reduction of deep impurity energy level also effectively reduces the recombination probability of photo-generate electron-hole pair, from
And the collection in electrode pair effective electron, hole is improve, improve the responsiveness characteristic of ultraviolet detector.
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
The invention provides a kind of AlxGa1-xN base ultraviolet detectors and preparation method thereof, with the ultraviolet spies of GaN during x=0
It is described in detail as a example by surveying device, the concrete preparation process of the detector includes：
(1) using outer layer growth equipment growth N-type ohmic contact layer GaN layer 11 in Sapphire Substrate 10, thickness is about
1.8 μm, carrier concentration is 5 × 1018cm-3；
(2) active layer i-GaN layers 12 are grown on n-GaN on N-type ohmic contact layer 11, its thickness is 0.1 μm, carrier
Concentration is 5 × 1016cm-3, and NH in appropriate elevated material growth course3Flow and reduction Material growth speed, control are remaining
Carbon impurity concn is 3 × 1016cm-3, a relatively low level is maintained at, and remains in that higher quality of materials；
(3) the growing P-type ohmic contact layer p-GaN layer 13 on active layer i-GaN layers 12, its thickness are 0.1 μm, carrier
Concentration is 5 × 1017cm-3；
(4) heavily doped p-type Ohmic contact cap rock p++-GaN layers 14, its thickness are grown on p-type ohmic contact layer p-GaN13
For 25nm, Mg concentration is mixed higher than 1 × 1020cm-3；
(5) by heavily doped p-type Ohmic contact cap rock p++-GaN layers 14, p-type ohmic contact layer p-GaN layers 13, active layer i-
GaN layer 12 is performed etching, and etching depth is rested in N-type ohmic contact layer n-GaN layers 11；
(6) growing P-type Ohmic contact transparency electrode 15, the electrode on heavily doped p-type Ohmic contact cap rock p++-GaN layers 14
Material is that the thickness of Ni/Au, wherein Ni and Au is respectively 5nm；
(7) quick thermal annealing process, by Ni/Au in air atmosphere 500 DEG C annealing 5min, to form p-type Ohmic contact；
(8) N-type Ohm contact electrode 16 is prepared on N-type ohmic contact layer n-GaN layers 11, the electrode material is Ti/Al/
Ti/Au, thickness are followed successively by 15/250/50/150nm；
(9) p-type is prepared on p-type Ohmic contact transparency electrode 15Ni (5nm)/Au (5nm) thicken electrode 17Ti/Ai/Ti/
Au, thickness are followed successively by 15/250/50/150nm, and ultraviolet detector is prepared and completed.
The Al that we are completed to preparationxGa1-xN (x=0) ultraviolet detector is tested, and has obtained its leakage current characteristic
Contrasted with general ultraviolet detector performance with responsiveness characteristic, and the performance the detector, Fig. 3 is present invention proposition
Ultraviolet detector and general ultraviolet detector leakage current comparison diagram, dotted line represents ultraviolet detector proposed by the present invention
The leakage current in the range of added reversed bias voltage is for 0-10V, solid line represent that general ultraviolet detector is 0-10V in added reversed bias voltage
In the range of leakage current.As can be seen from Figure, the leakage current of ultraviolet detector proposed by the present invention is detected than general ultraviolet
The leakage current of device reduces two orders of magnitude, and performance is substantially improved.
Fig. 4 is the responsiveness size comparison diagram of ultraviolet detector proposed by the present invention and general ultraviolet detector, and solid line is
Ultraviolet detector proposed by the present invention responsiveness collection of illustrative plates under zero-bias, dotted line are responded under zero-bias for general ultraviolet detector
Degree collection of illustrative plates.As can be seen from Figure, the responsiveness of ultraviolet detector proposed by the present invention is general ultraviolet explorer response
Three times of degree, spectral responsivity is greatly improved.This improvement be due to effective control in active layer with carbon impurity
The formation of relevant deep impurity energy level, so as to reduce leak channel, reduces the leakage current of ultraviolet detector, meanwhile, it is deep miscellaneous
The reduction of mass-energy level also effectively reduces the recombination probability of photo-generate electron-hole pair, so as to improve electrode pair effective electron, sky
The collection in cave, improves the responsiveness characteristic of ultraviolet detector.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Describe in detail bright, it should be understood that the foregoing is only the specific embodiment of the present invention, be not limited to the present invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (6)
1. a kind of AlxGa1-xN base ultraviolet detectors, including：
One substrate, the material of the substrate is sapphire, silicon, carborundum, gallium nitride or GaAs；
One N-type ohmic contact layer, the N-type ohmic contact layer are produced on substrate, and the material of the N-type ohmic contact layer is N-type
AlxGa1-xN, wherein x >=0, its thickness are 0.5-5 μm, and electron concentration is more than 1 × 1018cm-3；
One active layer, the active layer are produced on the side on N-type ohmic contact layer, the opposite side shape on the N-type ohmic contact layer
Into a table top, the material of the active layer is intrinsic AlxGa1-xN, wherein x >=0, electron concentration are less than 1 × 1017cm-3, and adjust
Growth conditionss, the concentration of the remaining carbon impurity of control are less than or equal to 5 × 1016cm-3；
One p-type ohmic contact layer, the p-type ohmic contact layer are produced on active layer；
One heavily doped p-type Ohmic contact cap rock, the heavily doped p-type Ohmic contact fabrication of cover coat is on p-type ohmic contact layer；
One p-type Ohmic contact transparency electrode, the p-type Ohmic contact transparency electrode are produced on heavily doped p-type Ohmic contact cap rock；
One N-type Ohm contact electrode, the N-type Ohm contact electrode are produced on the table top of N-type ohmic contact layer；
One p-type thickeies electrode, and the p-type thickeies electrode fabrication in p-type Ohmic contact transparency electrode, and its area is much smaller than p-type Europe
Nurse contacts the area of transparency electrode.
2. Al according to claim 1xGa1-xN base ultraviolet detectors, the wherein material of the p-type ohmic contact layer are p-type
AlxGa1-xN, wherein x >=0, its hole concentration are more than 1 × 1017cm-3；The material of the p-type Ohmic contact cap rock is heavily doped
P-type gallium nitride thin layer, its thickness be 5-80nm.
3. Al according to claim 1xGa1-xN base ultraviolet detectors, the wherein material of the p-type Ohmic contact transparency electrode
For Ni/Au or ITO, its thickness is less than 20nm；The material of the N-type Ohm contact electrode is Ti/Au, Ti/Al/Ti/Au or Ti/
Al/Ni/Au, thickness of its thickness more than p-type Ohmic contact transparency electrode.
4. a kind of AlxGa1-xThe preparation method of N base ultraviolet detectors, comprises the steps：
Step 1：Grow N-type ohmic contact layer, active layer, p-type ohmic contact layer and heavily doped p-type ohm on a substrate successively
Contact cap rock, the material of the active layer is intrinsic AlxGa1-xN, wherein x >=0, electron concentration are less than 1 × 1017cm-3, and especially
The concentration for controlling remaining carbon impurity is less than or equal to 5 × 1016cm-3；
Step 2：Side on heavily doped p-type Ohmic contact cap rock etches downwards, and etching depth rests on N-type ohmic contact layer
Within, the side on the N-type ohmic contact layer forms a table top, and the material of the N-type ohmic contact layer is N-type AlxGa1-xN,
Wherein x >=0, its thickness are 0.5-5 μm, and electron concentration is more than 1 × 1018cm-3；
Step 3：The growing P-type Ohmic contact transparency electrode on heavily doped p-type Ohmic contact cap rock, forms a substrate；
Step 4：Substrate is carried out into quick thermal annealing process, by p-type Ohmic contact transparency electrode annealed alloy, p-type Europe is formed
Nurse is contacted；
Step 5：N-type Ohm contact electrode is made on the table top of N-type ohmic contact layer；
Step 6：P-type is made in p-type Ohmic contact transparency electrode and thickeies electrode, complete to prepare.
5. Al according to claim 4xGa1-xThe preparation method of N base ultraviolet detectors, wherein the p-type ohmic contact layer
Material is p-type AlxGa1-xN, wherein x >=0, its hole concentration are more than 1 × 1017cm-3；The material of the p-type Ohmic contact cap rock is
Heavily doped p-type gallium nitride thin layer, its thickness are 5-80nm.
6. Al according to claim 4xGa1-xThe preparation method of N base ultraviolet detectors, wherein the p-type Ohmic contact are transparent
The material of electrode is Ni/Au or ITO, and its thickness is less than 20nm；The material of the N-type Ohm contact electrode is Ti/Au, Ti/Al/
Ti/Au or Ti/Al/Ni/Au, thickness of its thickness more than p-type Ohmic contact transparency electrode.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200642101A (en) * | 2005-05-18 | 2006-12-01 | Univ Southern Taiwan Tech | Photodetector |
| CN101101934A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving the performance of GaN base pin structure and its making method |
| CN102201484A (en) * | 2011-05-06 | 2011-09-28 | 中国科学院上海技术物理研究所 | AlGaN ultraviolet detector with secondary mesa wrapping electrode and manufacturing method thereof |
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2015
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200642101A (en) * | 2005-05-18 | 2006-12-01 | Univ Southern Taiwan Tech | Photodetector |
| CN101101934A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving the performance of GaN base pin structure and its making method |
| CN102201484A (en) * | 2011-05-06 | 2011-09-28 | 中国科学院上海技术物理研究所 | AlGaN ultraviolet detector with secondary mesa wrapping electrode and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Carbon-Induced Deep Traps Responsible for Current Collapse in AlGaN/GaN HEMTs;Pang Lei et al.;《半导体学报》;20080630;1-4 * |
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