CN105374803B - 一种功率模块 - Google Patents

一种功率模块 Download PDF

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CN105374803B
CN105374803B CN201510816484.1A CN201510816484A CN105374803B CN 105374803 B CN105374803 B CN 105374803B CN 201510816484 A CN201510816484 A CN 201510816484A CN 105374803 B CN105374803 B CN 105374803B
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bridge arm
upper bridge
copper
lower bridge
arm power
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徐文辉
王玉林
滕鹤松
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Yangzhou Guoyang Electronic Co Ltd
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Abstract

本发明公开了一种功率模块，包括底板、正电极、负电极、输出电极和绝缘基板，绝缘基板设于底板上，正电极、负电极和输出电极与底板之间均设有绝缘层，绝缘基板包括导热绝缘层以及形成于导热绝缘层上的铜层；所述绝缘基板的铜层上设有一个环形绝缘槽，绝缘槽包围的铜层为下桥臂铜层，绝缘槽外侧的铜层为上桥臂铜层，下桥臂铜层上设有下桥臂功率芯片单元，上桥臂铜层上设有上桥臂功率芯片单元；由正电极流出的工作电流通过上桥臂铜层流入上桥臂功率芯片单元，最后流至输出电极；由负电极流出的续流电流通过下桥臂功率芯片单元流入下桥臂铜层，最后流至输出电极。

Description

一种功率模块
技术领域
本发明涉及电力电子领域，特别是涉及一种功率模块。
背景技术
功率模块是功率电子电力器件如金属氧化物半导体(功率MOS管)、绝缘栅型场效应晶体管(IGBT)，快恢复二极管(FRD)按一定的功能组合封装成的电力开关模块，其主要用于电动汽车，光伏发电，风力发电，工业变频等各种场合下的功率转换。
由于模块中的功率开关被重复地切换，由其结构配置所产生的电感会降低功率模块的可靠性。现有的模块续流回路面积大，导致大电流情况下，模块的续流回路电感很大，使模块的开关损耗大，可靠性低。
发明内容
发明目的：本发明的目的是提供一种杂散电感低、开关损耗小、可靠性高的功率模块。
技术方案：为达到此目的，本发明采用以下技术方案：
本发明所述的功率模块，包括底板、正电极、负电极、输出电极和绝缘基板，绝缘基板设于底板上，正电极、负电极和输出电极与底板之间均设有绝缘层，绝缘基板包括导热绝缘层以及形成于导热绝缘层上的铜层；所述绝缘基板的铜层上设有一个环形绝缘槽，绝缘槽包围的铜层为下桥臂铜层，绝缘槽外侧的铜层为上桥臂铜层，下桥臂铜层上设有下桥臂功率芯片单元，上桥臂铜层上设有上桥臂功率芯片单元；由正电极流出的工作电流通过上桥臂铜层流入上桥臂功率芯片单元，最后流至输出电极；由负电极流出的续流电流通过下桥臂功率芯片单元流入下桥臂铜层，最后流至输出电极。
进一步，所述正电极与负电极在平行于底板的方向上叠层设置，且正电极与负电极之间也设有绝缘层。
进一步，所述绝缘槽刻蚀在绝缘基板的铜层上。
进一步，所述上桥臂功率芯片单元包括多个上桥臂功率芯片组，下桥臂功率芯片单元包括多个下桥臂功率芯片组；上桥臂功率芯片组包括集成于一体的上桥臂功率开关和上桥臂内部二极管，且上桥臂功率开关和上桥臂内部二极管并联；下桥臂功率芯片组包括集成于一体的下桥臂功率开关和下桥臂内部二极管，且下桥臂功率开关和下桥臂内部二极管并联；由负电极流出的续流电流从下桥臂内部二极管的正极流至下桥臂内部二极管的负极，然后经下桥臂铜层流至输出电极。
进一步，所述上桥臂功率芯片单元包括多个上桥臂功率芯片组，下桥臂功率芯片单元包括多个下桥臂功率芯片组；上桥臂功率芯片组包括并联的上桥臂功率开关、上桥臂内部二极管和上桥臂外部二极管，且上桥臂功率开关和上桥臂内部二极管集成于一体；下桥臂功率芯片组包括并联的下桥臂功率开关、下桥臂内部二极管和下桥臂外部二极管，且下桥臂功率开关和下桥臂内部二极管集成于一体；由负电极流出的续流电流流经下桥臂内部二极管和下桥臂外部二极管的正极、下桥臂内部二极管和下桥臂外部二极管的负极，然后经下桥臂铜层流至输出电极。
进一步，所述上桥臂功率芯片单元包括多个上桥臂功率芯片组，下桥臂功率芯片单元包括多个下桥臂功率芯片组；上桥臂功率芯片组包括上桥臂功率开关，上桥臂功率开关外部并联有上桥臂外部二极管；下桥臂功率芯片组包括下桥臂功率开关，下桥臂功率开关并联有下桥臂外部二极管；由负电极流出的续流电流流经下桥臂外部二极管的正极、下桥臂外部二极管的负极，然后经下桥臂铜层流至输出电极。
进一步，所述上桥臂功率开关和下桥臂功率开关均为功率MOS管；由正电极流出的工作电流通过上桥臂铜层流入上桥臂功率开关的漏极，然后经上桥臂功率开关的源极流出至输出电极。
进一步，所述上桥臂功率开关和下桥臂功率开关均为IGBT管；由正电极流出工作电流通过上桥臂铜层流入上桥臂功率开关的集电极，然后经上桥臂功率开关的发射极流出至输出电极。
进一步，所述上桥臂功率开关为MOS管，下桥臂功率开关为IGBT管；由正电极流出的工作电流通过上桥臂铜层流入上桥臂功率开关的漏极，然后经上桥臂功率开关的源极流出至输出电极。
进一步，所述上桥臂功率开关为IGBT管，下桥臂功率开关为MOS管；由正电极流出工作电流通过上桥臂铜层流入上桥臂功率开关的集电极，然后经上桥臂功率开关的发射极流出至输出电极。
有益效果：
1)本发明提供的功率模块中，绝缘基板的铜层上设有一个环形绝缘槽，绝缘槽包围的铜层为下桥臂铜层，绝缘槽外侧的铜层为上桥臂铜层，下桥臂铜层形成孤岛，且正电极与负电极叠层设置，使得由正电极流出的工作电流分流成两路，分别流经绝缘基板的两侧，而由负电极流出的续流电流从中间流过，因此，工作电流通路与续流电流通路围成的面积小，能够有效降低杂散电感，减小开关损耗，提高可靠性；
2)本发明的上桥臂功率芯片组与下桥臂功率芯片组的个数可为单数或者双数，使得设计更加灵活；
3)本发明提供的功率模块应用在高速功率模块领域时，能够更好地降低杂散电感，减小开关损耗；
4)本发明提供的功率模块可采用邦定线将各电极、各铜层以及各功率芯片单元直接连通，有效简化了电路结构，降低了成本。
附图说明
图1是本发明实施例的功率模块的电流流向示意图；
图2是本发明实施例的功率模块的电极结构图；
图3是本发明实施例的功率模块的电极结构剖面图；
图4是本发明实施例的功率模块中上桥臂功率开关和下桥臂功率开关均为IGBT管时的电路图；
图5是本发明实施例的功率模块中上桥臂功率开关和下桥臂功率开关均为功率MOS管时的电路图；
图6是本发明实施例的功率模块的实际布线图。
具体实施方式
下面结合附图，对本发明的技术方案做进一步的阐述。
如图1、图6所示，本发明实施例的功率模块包括底板1、绝缘的外壳9、正电极2、负电极3、输出电极4、绝缘基板5、上桥臂功率芯片单元7和下桥臂功率芯片单元8。外壳9设置在底板1上，其底部中间挖掉一部分，边缘的一圈保留，正电极2、负电极3和输出电极4注塑在外壳9底部边缘保留的部分，也即正电极2、负电极3和输出电极4与底板1之间均是绝缘的。输出电极4设置在外壳9底部的一端，正电极2和负电极3设置在外壳9底部的另一端。绝缘基板5设于底板1上，它是三层结构，包括上表面铜层、下表面铜层和中间的氧化铝或氮化铝陶瓷，其中上表面铜层与芯片连接，刻蚀有电路图，改变上表面铜层的分布形式即可改变绝缘基板5上表面电流的路径。绝缘基板5的上表面铜层上设有一个环形绝缘槽14，绝缘槽14包围的铜层为下桥臂铜层，绝缘槽14外侧的铜层为上桥臂铜层，使得下桥臂铜层形成孤岛。上桥臂铜层上设有一个上桥臂功率芯片单元7，上桥臂功率芯片单元7包括六个并联的上桥臂功率芯片组；下桥臂铜层上设有一个下桥臂功率芯片单元8，下桥臂功率芯片单元8包括六个并联的下桥臂功率芯片组。上桥臂功率芯片组和下桥臂功率芯片组的个数均可为单数或者双数，使得设计更加灵活。
上桥臂功率芯片组与下桥臂功率芯片组的第一种结构为：上桥臂功率芯片组包括集成于一体的上桥臂功率开关和上桥臂内部二极管，且上桥臂功率开关和上桥臂内部二极管并联；下桥臂功率芯片组包括集成于一体的下桥臂功率开关和下桥臂内部二极管，且下桥臂功率开关和下桥臂内部二极管并联；由负电极3流出的续流电流13从下桥臂内部二极管的正极流至下桥臂内部二极管的负极，然后经下桥臂铜层流至输出电极4。
上桥臂功率芯片组与下桥臂功率芯片组的第二种结构为：上桥臂功率芯片组包括并联的上桥臂功率开关、上桥臂内部二极管和上桥臂外部二极管，且上桥臂功率开关和上桥臂内部二极管集成于一体；下桥臂功率芯片组包括并联的下桥臂功率开关、下桥臂内部二极管和下桥臂外部二极管，且下桥臂功率开关和下桥臂内部二极管集成于一体；由负电极3流出的续流电流13从下桥臂内部二极管和下桥臂外部二极管的正极流至下桥臂内部二极管和下桥臂外部二极管的负极，然后经下桥臂铜层流至输出电极4。
上桥臂功率芯片组与下桥臂功率芯片组的第三种结构为：上桥臂功率芯片组包括上桥臂功率开关，上桥臂功率开关外部并联有上桥臂外部二极管；下桥臂功率芯片组包括下桥臂功率开关，下桥臂功率开关并联有下桥臂外部二极管；由负电极3流出的续流电流13从下桥臂外部二极管的正极流至下桥臂外部二极管的负极，然后经下桥臂铜层流至输出电极4。
其中，上桥臂功率开关为功率MOS管或者IGBT管，下桥臂功率开关为功率MOS管或者IGBT管。
当上桥臂功率开关和下桥臂功率开关均为功率MOS管时，上桥臂铜层包括上桥臂漏极铜层51和上桥臂源极铜层52，下桥臂铜层包括下桥臂漏极铜层61和下桥臂源极铜层62。如图1和图5所示，由正电极2流出的工作电流12通过上桥臂铜层流入上桥臂功率开关的漏极，然后经上桥臂功率开关的源极流出至输出电极4。
当上桥臂功率开关和下桥臂功率开关均为IGBT管时，如图4所示，由正电极2流出工作电流12通过上桥臂铜层流入上桥臂功率开关的集电极，然后经上桥臂功率开关的发射极流出至输出电极4。
上桥臂功率开关为MOS管，下桥臂功率开关为IGBT管；由正电极2流出的工作电流12通过上桥臂铜层流入上桥臂功率开关的漏极，然后经上桥臂功率开关的源极流出至输出电极4。
上桥臂功率开关为IGBT管，下桥臂功率开关为MOS管；由正电极2流出工作电流12通过上桥臂铜层流入上桥臂功率开关的集电极，然后经上桥臂功率开关的发射极流出至输出电极4。
下面以上桥臂功率开关和下桥臂功率开关均为功率MOS管，上桥臂功率芯片组与下桥臂功率芯片组采用第一种结构为例，介绍本发明的功率模块工作和续流的过程，以下所称邦定线均是英文bonding的译文：
工作时，上桥臂功率开关的栅极接受控制信号接通，工作电流12从正电极2流出，经过正极邦定线111流入上桥臂漏极铜层51，由于上桥臂漏极铜层51与下桥臂铜层之间是隔离的，因此工作电流12分流成两路，经由上桥臂漏极铜层51的左、右两侧流至上桥臂功率开关，接着电流分流成六路，分别流入六个上桥臂功率开关的漏极，然后从上桥臂功率开关的源极流出，经上桥臂邦定线113流至上桥臂源极铜层52，最后流出至输出电极4。
续流时，续流电流13从负电极3流出，经过负极邦定线112流入下桥臂源极铜层62，接着分流成六路，经过下桥臂邦定线114分别流入六个下桥臂内部二极管的正极，然后从下桥臂内部二极管的负极流出至下桥臂漏极铜层61，并经上桥臂邦定线113流至上桥臂源极铜层52，最后流出至输出电极4。
以上采用邦定线将各电极、各铜层以及各功率芯片单元直接连通，有效简化了电路结构，降低了成本。此外，还可采用超声波焊接的方式将各电极、各铜层以及各功率芯片单元直接连通。
为了使得工作电流12和续流电流13流经不同的路径，不相互影响，需要改变正电极2与负电极3的结构，采用电极叠层形式。如图2和图3所示，所述正电极2包括与外壳9底部连接的正电极引出部21和与正电极引出部21连接的正电极连接部22，负电极3包括与外壳9底部连接的负电极引出部31和与负电极引出部31连接的负电极连接部32，其中，正电极连接部22和负电极连接部32在平行于底板1的方向上叠层设置，且正电极连接部22和负电极连接部32之间设有绝缘层，使得正电极2、负电极3彼此之间不导通。采用这种正电极2与负电极3的结构，使得工作电流12与续流电流13分别在两种不同的路径上流动，也与上桥臂铜层和下桥臂铜层分离的结构相适应。
本发明提供的功率模块中，绝缘基板5的铜层上设有一个环形绝缘槽14，绝缘槽14包围的铜层为下桥臂铜层，绝缘槽14外侧的铜层为上桥臂铜层，下桥臂铜层形成孤岛，且正电极连接部22与负电极连接部32叠层设置，使得由正电极2流出的工作电流12分流成两路，分别流经绝缘基板5的两侧，而由负电极3流出的续流电流13从中间流过，因此，工作电流通路与续流电流通路围成的面积小，能够有效降低杂散电感，减小开关损耗，提高可靠性。
本发明提供的功率模块应用在高速功率模块领域时，能够更好地降低杂散电感，减小开关损耗。

Claims (10)

1.一种功率模块，包括底板(1)、正电极(2)、负电极(3)、输出电极(4)和绝缘基板(5)，绝缘基板(5)设于底板(1)上，正电极(2)、负电极(3)和输出电极(4)与底板(1)之间均设有绝缘层，绝缘基板(5)包括导热绝缘层以及形成于导热绝缘层上的铜层；其特征在于：所述绝缘基板(5)的铜层上设有一个环形绝缘槽(14)，绝缘槽(14)包围的铜层为下桥臂铜层，绝缘槽(14)外侧的铜层为上桥臂铜层，下桥臂铜层上设有下桥臂功率芯片单元(8)，上桥臂铜层上设有上桥臂功率芯片单元(7)；由正电极(2)流出的工作电流(12)通过上桥臂铜层流入上桥臂功率芯片单元(7)，最后流至输出电极(4)；由负电极(3)流出的续流电流(13)通过下桥臂功率芯片单元(8)流入下桥臂铜层，最后流至输出电极(4)。
2.根据权利要求1所述的功率模块，其特征在于：所述正电极(2)与负电极(3)在平行于底板(1)的方向上叠层设置，且正电极(2)与负电极(3)之间也设有绝缘层。
3.根据权利要求1所述的功率模块，其特征在于：所述绝缘槽(14)刻蚀在绝缘基板(5)的铜层上。
4.根据权利要求1所述的功率模块，其特征在于：所述上桥臂功率芯片单元(7)包括多个上桥臂功率芯片组，下桥臂功率芯片单元(8)包括多个下桥臂功率芯片组；上桥臂功率芯片组包括集成于一体的上桥臂功率开关和上桥臂内部二极管，且上桥臂功率开关和上桥臂内部二极管并联；下桥臂功率芯片组包括集成于一体的下桥臂功率开关和下桥臂内部二极管，且下桥臂功率开关和下桥臂内部二极管并联；由负电极(3)流出的续流电流(13)从下桥臂内部二极管的正极流至下桥臂内部二极管的负极，然后经下桥臂铜层流至输出电极(4)。
5.根据权利要求1所述的功率模块，其特征在于：所述上桥臂功率芯片单元(7)包括多个上桥臂功率芯片组，下桥臂功率芯片单元(8)包括多个下桥臂功率芯片组；上桥臂功率芯片组包括并联的上桥臂功率开关、上桥臂内部二极管和上桥臂外部二极管，且上桥臂功率开关和上桥臂内部二极管集成于一体；下桥臂功率芯片组包括并联的下桥臂功率开关、下桥臂内部二极管和下桥臂外部二极管，且下桥臂功率开关和下桥臂内部二极管集成于一体；由负电极(3)流出的续流电流(13)流经下桥臂内部二极管和下桥臂外部二极管的正极、下桥臂内部二极管和下桥臂外部二极管的负极，然后经下桥臂铜层流至输出电极(4)。
6.根据权利要求1所述的功率模块，其特征在于：所述上桥臂功率芯片单元(7)包括多个上桥臂功率芯片组，下桥臂功率芯片单元(8)包括多个下桥臂功率芯片组；上桥臂功率芯片组包括上桥臂功率开关，上桥臂功率开关外部并联有上桥臂外部二极管；下桥臂功率芯片组包括下桥臂功率开关，下桥臂功率开关并联有下桥臂外部二极管；由负电极(3)流出的续流电流(13)流经下桥臂外部二极管的正极、下桥臂外部二极管的负极，然后经下桥臂铜层流至输出电极(4)。
7.根据权利要求4至6中任意一项所述的功率模块，其特征在于：所述上桥臂功率开关和下桥臂功率开关均为功率MOS管；由正电极(2)流出的工作电流(12)通过上桥臂铜层流入上桥臂功率开关的漏极，然后经上桥臂功率开关的源极流出至输出电极(4)。
8.根据权利要求4至6中任意一项所述的功率模块，其特征在于：所述上桥臂功率开关和下桥臂功率开关均为IGBT管；由正电极(2)流出工作电流(12)通过上桥臂铜层流入上桥臂功率开关的集电极，然后经上桥臂功率开关的发射极流出至输出电极(4)。
9.根据权利要求4至6中任意一项所述的功率模块，其特征在于：所述上桥臂功率开关为MOS管，下桥臂功率开关为IGBT管；由正电极(2)流出的工作电流(12)通过上桥臂铜层流入上桥臂功率开关的漏极，然后经上桥臂功率开关的源极流出至输出电极(4)。
10.根据权利要求4至6中任意一项所述的功率模块，其特征在于：所述上桥臂功率开关为IGBT管，下桥臂功率开关为MOS管；由正电极(2)流出工作电流(12)通过上桥臂铜层流入上桥臂功率开关的集电极，然后经上桥臂功率开关的发射极流出至输出电极(4)。
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