CN105366626A - MEMS capacitance type humidity sensor and manufacturing method thereof - Google Patents
MEMS capacitance type humidity sensor and manufacturing method thereof Download PDFInfo
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- CN105366626A CN105366626A CN201510685341.1A CN201510685341A CN105366626A CN 105366626 A CN105366626 A CN 105366626A CN 201510685341 A CN201510685341 A CN 201510685341A CN 105366626 A CN105366626 A CN 105366626A
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- oxide layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/226—Construction of measuring vessels; Electrodes therefor
Abstract
The invention discloses an MEMS capacitance type humidity sensor and a manufacturing method thereof. The MEMS capacitance type humidity sensor comprises a substrate, an oxide layer, a first capacitor electrode, a second capacitor electrode and humidity sensitive mediums; the oxide layer is fixedly arranged on the substrate; the first and second capacitor electrodes are arranged on the oxide layer; a first pressure welding block and a second pressure welding block are respectively led out from the first capacitor electrode and the second capacitor electrode; and the humidity sensitive mediums are arranged between the first capacitor electrode and the second capacitor electrode and at the upper and lower sides of the first and second capacitor electrodes. According to the MEMS capacitance type humidity sensor and the manufacturing method thereof, a chip mounting technology can be simplified while a response speed is speeded up and no sensitivity is lost, and the packaging difficulty is reduced.
Description
Technical field
The present invention relates to a kind of humidity sensor and preparation method thereof, particularly relate to a kind of MEMS capacitive humidity sensor and preparation method thereof.
Background technology
Humidity sensor has a wide range of applications in multiple fields such as national defence aviation, meteorological detection, Industry Control, agricultural production, Medical Devices.In recent years, microminiaturization is an important directions of humidity sensor development.Existing Miniature humidity sensor mainly comprises the types such as condenser type, resistance-type, pressure resistance type.Power consumption is little, low cost and other advantages because having for capacitance type humidity sensor, is widely used in commercial kitchen area.Utilizing the comb teeth-shaped capacitance type minitype humidity sensor of MEMS technology manufacture to have, volume is little, uniformity good, be convenient to manufacture effectively to reduce the advantages such as product cost in enormous quantities.The improvement of humidity sensor response speed is one of focus of humidity sensor performance study.
The most close scheme:
A kind of CMOS relative humidity sensor of quick response is mentioned in patent CN101620197B, by substrate, oxide layer, capacitance electrode, humidity sensitive medium forms, oxide layer is located on substrate, capacitance electrode is located in oxide layer, capacitance electrode is drawn by press welding block, humidity sensitive medium to be located between capacitance electrode and above capacitance electrode, the oxide layer of corrosion substrate and top thereof, form cavity, the lower surface of the humidity sensitive medium between capacitance electrode is also contacted with air, capacitance electrode is interdigited electrode and is staggered, the free end of the common port and interdigited electrode of often organizing interdigited electrode is all fixed in oxide layer, to ensure the mechanical strength of electrode.This technology adopts polyimides as humidity sensitive medium, the oxide layer corrosion of substrate and top thereof is formed cavity, is air, the advantages such as this sensor has fast response time, and substrate parasitics is little above and below the humidity sensitive medium between capacitance electrode.
In response device time guaranteed situation, the encapsulation difficulty of device is often left in the basket, the CMOS relative humidity sensor of a kind of quick response related in patent CN101620197B, all contact with air above and below its humidity sensitive medium, reach the effect of response fast, and device sensitivity is not also suffered a loss, but the both sides due to humidity sensitive medium all need to contact with air, when humidity sensor encapsulates, need all to arrange air duct in the both sides of encapsulating housing, chip attachment difficulty is comparatively large, and packaging technology difficulty is higher.Therefore, while quickening response speed, reducing packaging technology difficulty is the problem to be solved in the present invention.
Because above-mentioned defect, the design people, actively in addition research and innovation, to founding a kind of MEMS capacitive humidity sensor and preparation method thereof, make it have more value in industry.
Summary of the invention
For solving the problems of the technologies described above, the object of this invention is to provide and a kind of not lose sensitivity, can facilitating chip attachment process while accelerating response speed, reduce MEMS capacitive humidity sensor of encapsulation difficulty and preparation method thereof.
A kind of MEMS capacitive humidity sensor that the present invention proposes, it is characterized in that: comprise substrate, oxide layer, the first capacitance electrode, the second capacitance electrode and humidity sensitive medium, described oxide layer sets firmly over the substrate, first and second capacitance electrode described is all arranged on above described oxide layer, described first capacitance electrode and the second capacitance electrode lead to the first press welding block and the second press welding block respectively, and described humidity sensitive medium is arranged between first and second capacitance electrode described and above and below first and second capacitance electrode.
As a further improvement on the present invention, first and second capacitance electrode described is all in comb teeth-shaped and interlaced arrangement.
As a further improvement on the present invention, first and second capacitance electrode described is equipped with slit, oxide layer below described slit is corroded formation air duct, between the surface, lower-left of the humidity sensitive medium of described air duct between first and second capacitance electrode and lower right surface.
As a further improvement on the present invention, first and second capacitance electrode described is between described humidity sensitive medium and described oxide layer.
As a further improvement on the present invention, described humidity sensitive medium is polyimides.
As a further improvement on the present invention, first and second capacitance electrode described is polysilicon electrode or aluminium electrode.
The preparation method of a kind of MEMS capacitive humidity sensor that the present invention proposes, is characterized in that: comprise the following steps:
(1) layer of silicon dioxide oxide layer is grown on a silicon substrate;
(2) deposit spathic silicon in oxide layer, then photoetching also etches formation first capacitance electrode and the second capacitance electrode and the first press welding block and the second press welding block;
(3) spin coating one deck photoresist on first and second capacitance electrode, comb capacitor regions is exposed in photoetching, utilizes silica erosion corrosion to fall portion of oxide layer below the first capacitance electrode and the second capacitance electrode;
(4) spin coating one deck polyimides on first and second capacitance electrode, makes all to fill up polyimides between first and second capacitance electrode and above and below first and second capacitance electrode;
(5) photoetching polyimides, etching forms slot pattern on humidity sensitive regional graphics and capacitance electrode, and the capacitance electrode of etching below forms slit further, and then carries out imidization process to polyimides;
(6) spin coating one deck photoresist, comb capacitor regions is exposed in photoetching, silica erosion liquid is utilized to erode the oxide layer below slit through the slit on comb capacitance electrode, form the surface, lower-left of the polyimides between first and second capacitance electrode of often pair of comb teeth-shaped and the air duct in lower right surface and the external world, recycling ethyl acetate removes photoresist, cleaning, dry.
By such scheme, the present invention at least has the following advantages: MEMS capacitive humidity sensor provided by the invention and preparation method thereof is not losing sensitivity, while accelerating response speed, humidity sensitive medium and extraneous all air ducts are made all to be positioned at the same side of humidity sensitive medium by ingehious design, like this, only need the air duct considering this side during this sensor package, chip attachment process is also simplified, and encapsulation difficulty reduces greatly.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of description, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is the top view of MEMS capacitive humidity sensor of the present invention;
Fig. 2 is the sectional view of MEMS capacitive humidity sensor of the present invention;
Wherein: 1-substrate; 2-oxide layer; 3-first capacitance electrode; 4-second capacitance electrode; 5-humidity sensitive medium; 6-air duct; 31-first press welding block; 41-second press welding block; 61-slit.
Detailed description of the invention
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Embodiment: a kind of MEMS capacitive humidity sensor, comprise substrate 1, oxide layer 2, first capacitance electrode 3, second capacitance electrode 4 and humidity sensitive medium 5, described oxide layer sets firmly over the substrate, first and second capacitance electrode described is all arranged on above described oxide layer, described first capacitance electrode and the second capacitance electrode lead to the first press welding block 31 and the second press welding block 41 respectively, and described humidity sensitive medium is arranged between first and second capacitance electrode described and above and below first and second capacitance electrode.
First and second capacitance electrode described is all in comb teeth-shaped and interlaced arrangement.
First and second capacitance electrode described is equipped with slit 61, and the oxide layer below described slit is corroded and forms air duct 6, between the surface, lower-left of the humidity sensitive medium of described air duct between first and second capacitance electrode and lower right surface.
First and second capacitance electrode described is between described humidity sensitive medium and described oxide layer.
Described humidity sensitive medium is polyimides.
First and second capacitance electrode described is polysilicon electrode or aluminium electrode.
A preparation method for MEMS capacitive humidity sensor, comprises the following steps:
(1) layer of silicon dioxide oxide layer is grown on a silicon substrate;
(2) deposit spathic silicon in oxide layer, then photoetching also etches formation first capacitance electrode and the second capacitance electrode and the first press welding block and the second press welding block;
(3) spin coating one deck photoresist on first and second capacitance electrode, comb capacitor regions is exposed in photoetching, utilizes silica erosion corrosion to fall portion of oxide layer below the first capacitance electrode and the second capacitance electrode;
(4) spin coating one deck polyimides on first and second capacitance electrode, makes all to fill up polyimides between first and second capacitance electrode and above and below first and second capacitance electrode;
(5) photoetching polyimides, etching forms slot pattern on humidity sensitive regional graphics and capacitance electrode, and the capacitance electrode of etching below forms slit further, and then carries out imidization process to polyimides;
(6) spin coating one deck photoresist, comb capacitor regions is exposed in photoetching, silica erosion liquid is utilized to erode the oxide layer below slit through the slit on comb capacitance electrode, form the surface, lower-left of the polyimides between first and second capacitance electrode of often pair of comb teeth-shaped and the air duct in lower right surface and the external world, recycling ethyl acetate removes photoresist, cleaning, dry.
The comb teeth-shaped electric capacity that first capacitance electrode and the second capacitance electrode are formed is using polyimides as humidity sensitive medium, when external environment humidity changes, moisture content meeting respective change in polyimides wet sensory material, the dielectric constant of the blending agent that polyimides and water are formed can change, thus cause the change of humidity sensitive capacitance value, recycling capacitive detection circuit detects the change of humidity sensitive capacitance, thus can collect the information of ambient humidity.
Comb-like electrode etches slit, then the sacrificial layer material around humidity sensitive medium is eroded through slit, the top of humidity sensitive medium and the left and right sides are all contacted with air, response time shortens, response speed is accelerated, and all air ducts are all positioned at the same side of humidity sensitive medium, chip attachment process is also simplified, and encapsulation difficulty reduces greatly.
The above is only the preferred embodiment of the present invention; be not limited to the present invention; should be understood that; for those skilled in the art; under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (7)
1. a MEMS capacitive humidity sensor, it is characterized in that: comprise substrate (1), oxide layer (2), first capacitance electrode (3), second capacitance electrode (4) and humidity sensitive medium (5), described oxide layer sets firmly over the substrate, described first, two capacitance electrodes are all arranged on above described oxide layer, described first capacitance electrode and the second capacitance electrode lead to the first press welding block (31) and the second press welding block (41) respectively, described humidity sensitive medium is arranged on described first, between two capacitance electrodes and first, above and below two capacitance electrodes.
2. MEMS capacitive humidity sensor according to claim 1, is characterized in that: first and second capacitance electrode described is all in comb teeth-shaped and interlaced arrangement.
3. MEMS capacitive humidity sensor according to claim 2, it is characterized in that: first and second capacitance electrode described is equipped with slit (61), oxide layer below described slit is corroded and forms air duct (6), between the surface, lower-left of the humidity sensitive medium of described air duct between first and second capacitance electrode and lower right surface.
4. MEMS capacitive humidity sensor according to claim 3, is characterized in that: first and second capacitance electrode described is between described humidity sensitive medium and described oxide layer.
5. MEMS capacitive humidity sensor according to claim 4, is characterized in that: described humidity sensitive medium is polyimides.
6. MEMS capacitive humidity sensor according to claim 5, is characterized in that: first and second capacitance electrode described is polysilicon electrode or aluminium electrode.
7. a preparation method for MEMS capacitive humidity sensor, is characterized in that: comprise the following steps:
(1) layer of silicon dioxide oxide layer is grown on a silicon substrate;
(2) deposit spathic silicon in oxide layer, then photoetching also etches formation first capacitance electrode and the second capacitance electrode and the first press welding block and the second press welding block;
(3) spin coating one deck photoresist on first and second capacitance electrode, comb capacitor regions is exposed in photoetching, utilizes silica erosion corrosion to fall portion of oxide layer below the first capacitance electrode and the second capacitance electrode;
(4) spin coating one deck polyimides on first and second capacitance electrode, makes all to fill up polyimides between first and second capacitance electrode and above and below first and second capacitance electrode;
(5) photoetching polyimides, etching forms slot pattern on humidity sensitive regional graphics and capacitance electrode, and the capacitance electrode of etching below forms slit further, and then carries out imidization process to polyimides;
(6) spin coating one deck photoresist, comb capacitor regions is exposed in photoetching, silica erosion liquid is utilized to erode the oxide layer below slit through the slit on comb capacitance electrode, form the surface, lower-left of the polyimides between first and second capacitance electrode of often pair of comb teeth-shaped and the air duct in lower right surface and the external world, recycling ethyl acetate removes photoresist, cleaning, dry.
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| CN201510685341.1A CN105366626B (en) | 2015-10-21 | 2015-10-21 | MEMS capacitive humidity sensor and preparation method thereof |
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| CN201510685341.1A CN105366626B (en) | 2015-10-21 | 2015-10-21 | MEMS capacitive humidity sensor and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109875508A (en) * | 2019-02-18 | 2019-06-14 | 广西科技大学 | The acquisition system of characteristics of human body's information |
| CN110108762A (en) * | 2019-04-08 | 2019-08-09 | 浙江省北大信息技术高等研究院 | A kind of humidity sensor and its manufacturing method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487292A (en) * | 1977-12-23 | 1979-07-11 | Hitachi Ltd | Moisture sensor |
| US4642601A (en) * | 1980-07-21 | 1987-02-10 | Hitachi, Ltd. | Humidity-sensitive element |
| JPH0823542B2 (en) * | 1992-10-30 | 1996-03-06 | 株式会社クラベ | Humidity detection element |
| CN1455250A (en) * | 2003-06-12 | 2003-11-12 | 东南大学 | Capacitance type relative humidity sensor |
| CN101620197A (en) * | 2009-07-23 | 2010-01-06 | 东南大学 | Rapid response CMOS relative humidity sensor |
| CN102262107A (en) * | 2011-04-20 | 2011-11-30 | 东南大学 | Capacitive relative humidity sensor for micro-electromechanical system |
| CN103675041A (en) * | 2013-11-30 | 2014-03-26 | 江苏物联网研究发展中心 | Multi-range interdigital capacitive humidity sensor |
| CN104634832A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | CMOS MEMS capacitance-type humidity sensor and preparation method thereof |
-
2015
- 2015-10-21 CN CN201510685341.1A patent/CN105366626B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487292A (en) * | 1977-12-23 | 1979-07-11 | Hitachi Ltd | Moisture sensor |
| US4642601A (en) * | 1980-07-21 | 1987-02-10 | Hitachi, Ltd. | Humidity-sensitive element |
| JPH0823542B2 (en) * | 1992-10-30 | 1996-03-06 | 株式会社クラベ | Humidity detection element |
| CN1455250A (en) * | 2003-06-12 | 2003-11-12 | 东南大学 | Capacitance type relative humidity sensor |
| CN101620197A (en) * | 2009-07-23 | 2010-01-06 | 东南大学 | Rapid response CMOS relative humidity sensor |
| CN102262107A (en) * | 2011-04-20 | 2011-11-30 | 东南大学 | Capacitive relative humidity sensor for micro-electromechanical system |
| CN103675041A (en) * | 2013-11-30 | 2014-03-26 | 江苏物联网研究发展中心 | Multi-range interdigital capacitive humidity sensor |
| CN104634832A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | CMOS MEMS capacitance-type humidity sensor and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109875508A (en) * | 2019-02-18 | 2019-06-14 | 广西科技大学 | The acquisition system of characteristics of human body's information |
| CN110108762A (en) * | 2019-04-08 | 2019-08-09 | 浙江省北大信息技术高等研究院 | A kind of humidity sensor and its manufacturing method |
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| CN105366626B (en) | 2017-12-12 |
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