CN105356437B - A kind of anti-surge circuit - Google Patents

A kind of anti-surge circuit Download PDF

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Publication number
CN105356437B
CN105356437B CN201510737420.2A CN201510737420A CN105356437B CN 105356437 B CN105356437 B CN 105356437B CN 201510737420 A CN201510737420 A CN 201510737420A CN 105356437 B CN105356437 B CN 105356437B
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resistance
capacitance
semiconductor
oxide
metal
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CN105356437A (en
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熊洪亮
吴海燕
方洁苗
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ZHEJIANG YUYANG ELECTRONICS Co Ltd
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ZHEJIANG YUYANG ELECTRONIC CO Ltd
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Abstract

The invention discloses a kind of anti-surge circuits,Including high-power resistance R1,Metal-oxide-semiconductor Q1,Resistance R2,Resistance R3,Resistance R4,Voltage-stabiliser tube ZD1,Capacitance C1,Electrolytic capacitor EC1,Capacitance C3,Capacitance C2,Bridge heap BD1 and fuse F1,It is characterized in that the anode of a termination electrolytic capacitor EC1 of the capacitance C1,The anode of one end and bridge heap BD1 of resistance R4,The other end of capacitance C1,The cathode of electrolytic capacitor EC1,The drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1,The cathode of another termination bridge heap BD1 of resistance R1,Metal-oxide-semiconductor Q1 source electrodes,One end of capacitance C2,The anode of voltage-stabiliser tube ZD1,One end of one end and resistance R3 of capacitance C3,The grid of another termination metal-oxide-semiconductor Q1 of capacitance C2,One end of the cathode and resistance R2 of voltage-stabiliser tube ZD1,Another terminating resistor R4 of resistance R2,The other end of resistance R3 and capacitance C3.In high-speed switch machine and heat engine switching on and shutting down, surge current is the same to be inhibited the present invention, to greatly reduce impact of the electronic product to power grid.

Description

A kind of anti-surge circuit
Technical field
The present invention relates to circuit field, specifically a kind of anti-surge circuit.
Background technology
The NTC being commonly used inhibits in-rush current limiting circuit to be widely applied since it is simply obtained, circuit structure such as Fig. 1 It is shown, but since its power consumption and heat engine unrestraint surge act on so that effect is undesirable in many applications.With present Electronic product is higher and higher to surge current requirements, and the circuit of this structure has been unable to meet requirement.
Invention content
The present invention is to solve the above problem of the existing technology, it is desirable to provide a kind of follow-on Anti-surging electricity Road can either more effectively reduce surge current, greatly reduce the impact to power grid, while low in energy consumption, and not will produce heat engine Unrestraint surge acts on.
To solve the above problems, the present invention uses following technical scheme:A kind of anti-surge circuit, including high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, capacitance C1, electrolytic capacitor EC1, capacitance C3, capacitance C2, bridge Heap BD1 and fuse F1, it is characterised in that the anode of a termination electrolytic capacitor EC1 of the capacitance C1, one end of resistance R4 With the anode of bridge heap BD1, the other end of capacitance C1, the cathode of electrolytic capacitor EC1, metal-oxide-semiconductor Q1 drain electrode and resistance R1 one end Ground connection, the cathode of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrodes, one end of capacitance C2, voltage-stabiliser tube ZD1 anode, One end of one end and resistance R3 of capacitance C3, the grid of another termination metal-oxide-semiconductor Q1 of capacitance C2, the cathode and electricity of voltage-stabiliser tube ZD1 Hinder one end of R2, another terminating resistor R4 of resistance R2, the other end of resistance R3 and capacitance C3.
A kind of anti-surge circuit of the present invention, when starting, since voltage is 0 on electrolytic capacitor EC1 and capacitance C1, Metal-oxide-semiconductor Q1 shutdowns, input voltage is charged by high-power resistance R1 to electrolytic capacitor EC1 and capacitance C1, so electric current is by resistance R1 determines that resistance R1 resistance values are bigger, and surge current is with regard to smaller, when the voltage on electrolytic capacitor EC1 reaches some value, MOS When pipe Q1 grid voltages reach the threshold voltage of metal-oxide-semiconductor, metal-oxide-semiconductor Q1 is opened, short-circuit resistance R1, start completion, due to metal-oxide-semiconductor Q1 After conducting, voltage is very small between the DS of metal-oxide-semiconductor Q1, and loss is very low.Capacitance C2, capacitance C3 can be used for adjusting metal-oxide-semiconductor Q1 The rise time of grid voltage, the service time of control metal-oxide-semiconductor Q1, voltage-stabiliser tube ZD1 can be used for protecting metal-oxide-semiconductor Q1 grid voltages No more than its limit value.Due to the presence of resistance R1 so that surge current can be made small, and due to the presence of metal-oxide-semiconductor Q1, make Entire electronic product is obtained when normal work, efficiency is unaffected.
The present invention also provides the anti-surge circuit of another structure, including high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, Resistance R3, resistance R4, voltage-stabiliser tube ZD1, capacitance C1, electrolytic capacitor EC1, capacitance C3, capacitance C2, bridge heap BD1, fuse F1, two Pole pipe D1, triode Q2 and resistance R5, it is characterised in that anode, the resistance of a termination electrolytic capacitor EC1 of the capacitance C1 The anode of one end and bridge heap BD1 of R4, the other end of capacitance C1, the cathode of electrolytic capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and resistance One end of R1 is grounded, cathode, metal-oxide-semiconductor Q1 source electrodes, one end of capacitance C2, the voltage-stabiliser tube ZD1 of another termination bridge heap BD1 of resistance R1 Anode, one end of capacitance C3, resistance R3 one end and resistance R5 one end, the grid of another termination metal-oxide-semiconductor Q1 of capacitance C2, One end of the cathode and resistance R2 of voltage-stabiliser tube ZD1, the transmitting of the cathode and triode Q2 of another terminating diode D1 of resistance R2 Pole, the other end of the collector connecting resistance R5 of triode Q2, base stage connecting resistance R4, the resistance R3 of triode Q2 and capacitance C3's is another One end.
The technical program is the improvement made on the basis of previous technical solution, increases one by diode D1, triode The grid leadage circuit that Q2 and resistance R5 are constituted, for the electricity for metal-oxide-semiconductor Q1 grids of releasing when main function is to turn off Pressure, works as switching off input voltage, and triode Q2 base voltages are fallen before, and triode Q2 is caused to be connected, and metal-oxide-semiconductor Q1 grid voltages pass through Triode Q2 repid discharges, triode Q2 is rapidly switched off, and when opening input voltage, input is still obtained and given by resistance R1 Electrolytic capacitor EC1 and capacitance C1 chargings, so high-speed switch machine can preferably be realized by this circuit, and due to metal-oxide-semiconductor The presence of Q1 so that for entire electronic product when normal work, efficiency is unaffected, is exactly high-speed switch machine and heat engine Switching on and shutting down, surge current is the same to be inhibited, to greatly reduce impact of the electronic product to power grid.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and specific embodiments.
Fig. 1 is the circuit diagram that existing NTC inhibits in-rush current limiting circuit.
Fig. 2 is a kind of circuit structure diagram of anti-surge circuit of the present invention.
Fig. 3 is another circuit structure diagram of anti-surge circuit of the present invention.
Specific implementation mode
Fig. 1 is that existing NTC inhibits in-rush current limiting circuit, and defect is already discussed above, and details are not described herein.
With reference to Fig. 2, a kind of anti-surge circuit of the invention, including high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, capacitance C1, electrolytic capacitor EC1, capacitance C3, capacitance C2, bridge heap BD1 and fuse F1, it is described The one of capacitance C1 terminates the anode of one end and bridge heap BD1 of the anode of electrolytic capacitor EC1, resistance R4, the other end, the electricity of capacitance C1 The drain electrode of the cathode, metal-oxide-semiconductor Q1 of capacitance EC1 and one end ground connection of resistance R1 are solved, another termination bridge heap BD1's of resistance R1 is negative Pole, metal-oxide-semiconductor Q1 source electrodes, one end of capacitance C2, the anode of voltage-stabiliser tube ZD1, one end of capacitance C3 and resistance R3 one end, capacitance C2 The grid of another termination metal-oxide-semiconductor Q1, voltage-stabiliser tube ZD1 cathode and resistance R2 one end, another terminating resistor R4 of resistance R2, The other end of resistance R3 and capacitance C3.
A kind of anti-surge circuit of the present invention, operation principle are as follows:When starting, due to electrolytic capacitor EC1 and Voltage is 0 on capacitance C1, and metal-oxide-semiconductor Q1 shutdowns, input voltage is filled by high-power resistance R1 to electrolytic capacitor EC1 and capacitance C1 Electricity, so electric current is determined by resistance R1, resistance R1 resistance values are bigger, and surge current is with regard to smaller, when the voltage on electrolytic capacitor EC1 reaches When to some value, when metal-oxide-semiconductor Q1 grid voltages reach the threshold voltage of metal-oxide-semiconductor, metal-oxide-semiconductor Q1 is opened, short-circuit resistance R1, is started It completes, after metal-oxide-semiconductor Q1 conductings, voltage is very small between the DS of metal-oxide-semiconductor Q1, and loss is very low.Capacitance C2, capacitance C3 can be with For adjusting the rise time of metal-oxide-semiconductor Q1 grid voltages, the service time of control metal-oxide-semiconductor Q1, voltage-stabiliser tube ZD1 can be used for protecting Metal-oxide-semiconductor Q1 grid voltages are no more than its limit value.Due to the presence of resistance R1 so that surge current can be made small, and due to The presence of metal-oxide-semiconductor Q1 so that for entire electronic product when normal work, efficiency is unaffected.
With reference to Fig. 3, the anti-surge circuit of another structure of the invention, including high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, capacitance C1, electrolytic capacitor EC1, capacitance C3, capacitance C2, bridge heap BD1, fuse F1, The anode of a termination electrolytic capacitor EC1 of diode D1, triode Q2 and resistance R5, the capacitance C1, one end of resistance R4 With the anode of bridge heap BD1, the other end of capacitance C1, the cathode of electrolytic capacitor EC1, metal-oxide-semiconductor Q1 drain electrode and resistance R1 one end Ground connection, the cathode of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrodes, one end of capacitance C2, voltage-stabiliser tube ZD1 anode, One end of capacitance C3, one end and resistance R5 of resistance R3 one end, grid, the voltage-stabiliser tube of another termination metal-oxide-semiconductor Q1 of capacitance C2 One end of the cathode and resistance R2 of ZD1, the emitter of the cathode and triode Q2 of another terminating diode D1 of resistance R2, three poles The other end of the collector connecting resistance R5 of pipe Q2, the base stage connecting resistance R4 of triode Q2, the other end of resistance R3 and capacitance C3.
Present embodiment is improvement on the basis of Fig. 2 embodiments, increase one by diode D1, triode Q2 and The grid leadage circuit that resistance R5 is constituted, for the voltage for metal-oxide-semiconductor Q1 grids of releasing when main function is to turn off, when Switching off input voltage, triode Q2 base voltages are fallen before, and triode Q2 is caused to be connected, and metal-oxide-semiconductor Q1 grid voltages pass through three poles Pipe Q2 repid discharges, triode Q2 is rapidly switched off, and when opening input voltage, input is still obtained through resistance R1 to electrolysis Capacitance EC1 and capacitance C1 chargings, so high-speed switch machine can preferably be realized by this circuit, and due to metal-oxide-semiconductor Q1's In the presence of so that for entire electronic product when normal work, efficiency is unaffected, is exactly high-speed switch machine and heat engine switch Machine, surge current is the same to be inhibited, to greatly reduce impact of the electronic product to power grid.
It is to be understood that:Above-described embodiment is the description of the invention, rather than limiting the invention, any Without departing from the innovation and creation within the scope of true spirit, each fall within protection scope of the present invention.

Claims (1)

1. a kind of anti-surge circuit, including high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, Capacitance C1, electrolytic capacitor EC1, capacitance C3, capacitance C2, bridge heap BD1, fuse F1, diode D1, triode Q2 and resistance R5, It is characterized in that the anode of one end and bridge heap BD1 of the anode of a termination electrolytic capacitor EC1 of the capacitance C1, resistance R4, One end ground connection of the other end of capacitance C1, the cathode of electrolytic capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and resistance R1, resistance R1's is another Terminate cathode, metal-oxide-semiconductor Q1 source electrodes, one end of capacitance C2, the anode of voltage-stabiliser tube ZD1, one end of capacitance C3, the resistance of bridge heap BD1 One end of one end and resistance R5 of R3, the grid of another termination metal-oxide-semiconductor Q1 of capacitance C2, the cathode and resistance R2 of voltage-stabiliser tube ZD1 One end, the emitter of the cathode and triode Q2 of another terminating diode D1 of resistance R2, the collector of triode Q2 connects electricity Hinder the other end of R5, the base stage connecting resistance R4 of triode Q2, the other end of resistance R3 and capacitance C3.
CN201510737420.2A 2015-11-04 2015-11-04 A kind of anti-surge circuit Active CN105356437B (en)

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Publication number Priority date Publication date Assignee Title
CN106026626A (en) * 2016-06-29 2016-10-12 浪潮集团有限公司 Surge current suppressor based on RC time delay circuit
CN106712562A (en) * 2016-12-15 2017-05-24 宁波央腾汽车电子有限公司 Inductive load circuit and method of eliminating current spikes
CN109245073B (en) * 2018-09-28 2020-06-23 深圳市崧盛电子股份有限公司 Control circuit for suppressing surge voltage and current of power supply and power supply
CN109818341A (en) * 2019-03-12 2019-05-28 欧普照明股份有限公司 A kind of surge current suppression circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657841B1 (en) * 1999-09-03 2003-12-02 Moeller Gmbh Circuit arrangement for the overvoltage protection of a power transistor for controlling an inductive load
CN103904631A (en) * 2012-12-31 2014-07-02 海洋王(东莞)照明科技有限公司 Protection circuit
CN204068682U (en) * 2014-08-23 2014-12-31 成都四威航空电源有限公司 A kind of high-power low-loss surge restraint circuit
CN204089183U (en) * 2014-08-07 2015-01-07 广州海格通信集团股份有限公司 A kind of can the Anti-surging mains switch protective circuit of frequent
CN205081465U (en) * 2015-11-04 2016-03-09 浙江榆阳电子有限公司 Anti -surge circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657841B1 (en) * 1999-09-03 2003-12-02 Moeller Gmbh Circuit arrangement for the overvoltage protection of a power transistor for controlling an inductive load
CN103904631A (en) * 2012-12-31 2014-07-02 海洋王(东莞)照明科技有限公司 Protection circuit
CN204089183U (en) * 2014-08-07 2015-01-07 广州海格通信集团股份有限公司 A kind of can the Anti-surging mains switch protective circuit of frequent
CN204068682U (en) * 2014-08-23 2014-12-31 成都四威航空电源有限公司 A kind of high-power low-loss surge restraint circuit
CN205081465U (en) * 2015-11-04 2016-03-09 浙江榆阳电子有限公司 Anti -surge circuit

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Address after: No. 656, Tongde Road, Tongxiang Economic Development Zone, Tongxiang City, Jiaxing City, Zhejiang Province, 314500

Patentee after: Zhejiang Yuyang Electronics Co., Ltd.

Address before: No. 656, Tongde Road, Tongxiang Economic Development Zone, Tongxiang City, Jiaxing City, Zhejiang Province, 314500

Patentee before: ZHEJIANG YUYANG ELECTRONICS CO.,LTD.

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