CN105355792A - Organic solar cell based on organic-inorganic hybrid cathode buffer layer - Google Patents

Organic solar cell based on organic-inorganic hybrid cathode buffer layer Download PDF

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Publication number
CN105355792A
CN105355792A CN201510846648.5A CN201510846648A CN105355792A CN 105355792 A CN105355792 A CN 105355792A CN 201510846648 A CN201510846648 A CN 201510846648A CN 105355792 A CN105355792 A CN 105355792A
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buffer layer
organic
cathode buffer
inorganic hybridization
cathode
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于军胜
王瀚雨
郑丁
孔天宇
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses an organic solar cell based on an organic-inorganic hybrid cathode buffer layer, and belongs to the field of organic polymer solar photovoltaic devices. The cell, with an inverse structure, sequentially comprises a substrate, a transparent conductive cathode ITO, an organic-inorganic hybrid cathode buffer layer, an optical activity layer, an anode buffer layer and a metal anode from bottom to top. The organic-inorganic hybrid cathode buffer layer contains, by weight percentage, 97-99.5% of ZnO nano-particles and 0.5-3% of perylene dicarboximide micro-molecules. Perylene dicarboximide micro-molecules materials are added to the ZnO nano-particle cathode buffer layer to improve photo-conductivity of the cathode buffer layer and the collection capability of electrons in the place of a cathode. Therefore, the short circuit current density and fill factors of a device are improved, and finally the photoelectric conversion efficiency of the device is improved. The organic solar cell based on an organic-inorganic hybrid cathode buffer layer has the advantages of being high in photoelectric conversion efficiency and low in cost, and being easy to prepare.

Description

A kind of organic solar batteries based on organic inorganic hybridization cathode buffer layer
Technical field
The present invention relates to organic polymer solar field of photovoltaic devices, particularly a kind of organic solar batteries based on organic inorganic hybridization cathode buffer layer.
Background technology
The problem such as energy scarcity and ecological deterioration has become the major issue that human survival and development faces.No matter from the viewpoint of the reserves of non-renewable energy resources, or from the view point of current environment protection, the mankind must find alternative green regenerative energy sources as early as possible.Occupy the solar energy of earth gross energy more than 99%, have inexhaustible, there is no the feature polluted, become one of new forms of energy of various countries scientist development and utilization.At present, according to the difference of the photoactive layer material of composition solar cell, solar cell can be divided into inorganic solar cell and organic solar batteries.Compared with inorganic solar cell, organic solar batteries is easy with its materials synthesis, raw material sources are extensive, manufacture craft is simple and with low cost, power consumption less, flexible device can be made and be easy to the outstanding advantages such as large-scale production, win great attention and the great interest of scientist and energy sector of various countries, and be filled with a large amount of R&D funds.From the nineties in 20th century, along with the fast development of organic optoelectronic, the photoelectric conversion efficiency of the organic solar batteries adopting new material, new construction and new interface modification process to prepare is greatly enhanced.
But, with for large-scale production inorganic solar cell compared with, organic solar batteries due to its photoelectric conversion efficiency relatively low, it is practical also needs time.Tradition organic solar batteries still there is following problem: the electron mobility of cathode buffer layer is lower, limit the collection of light induced electron at negative electrode place, thus limit short-circuit current density and the fill factor, curve factor of organic solar batteries, ultimately limit the photoelectric conversion efficiency of organic solar batteries.
Summary of the invention
Goal of the invention of the present invention is: for prior art, the technical problem to be solved in the present invention how to provide a kind of organic solar batteries based on organic inorganic hybridization cathode buffer layer, object adopts the mode of organic material inorganic material hydridization to prepare cathode buffer layer, improve the photoconduction of cathode buffer layer, improve the capacity gauge of electronics at negative electrode place, thus improve short-circuit current density and the fill factor, curve factor of organic solar batteries, prepare high performance organic solar batteries.
Technical scheme of the present invention is: a kind of organic solar batteries based on organic inorganic hybridization cathode buffer layer, it is characterized in that, this solar cell adopts reciprocal form structure, be followed successively by from top to bottom: substrate, transparent conductive cathode ITO, organic inorganic hybridization cathode buffer layer, photoactive layer, anode buffer layer, metal anode; The percentage by weight of organic inorganic hybridization cathode buffer layer consists of: ZnO nano particle 97-99.5% ， perylene dicarboximide micromolecular 0.5-3%.
As preferably, described organic inorganic hybridization cathode buffer layer Zhong ， perylene dicarboximide micromolecular is N, N '-dioctyl-3,4,9,10-perylene dicarboximide (PTCDI-C8), N, N '-diphenyl-3,4,9,10-perylene dicarboximide (PTCDI-Ph), N, N '-diamyl-3,4,9,10-perylene dicarboximide (PTCDI-C5) or N, N '-dimethyl-3, one in 4,9,10-perylene dicarboximide (MePTCDI).
As preferably, in described photoactive layer, electron donor material is P3HT.
As preferably, in described photoactive layer, electron acceptor material is PC 61bM or PC 71one in BM.
As preferably, described anode buffer layer material is poly-PEDOT:PSS, and anode buffer layer thickness is 15-50nm.
As preferably, described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100-300nm.
As preferably, described backing material is glass or transparent polymer, and described transparent polymer material is one or more in polyethylene, polymethyl methacrylate, Merlon, polyurethanes, vinyl chloride-vinyl acetate resin or polyacrylic acid.
Compared with prior art, beneficial effect of the present invention is:
1, cathode buffer layer is prepared by the mode of Cai perylene dicarboximide micromolecular and ZnO nano particle hydridization, by the photogenerated charge transfer process of perylene dicarboximide micromolecular and ZnO nano particle Xia illumination condition, improve the photoconduction of cathode buffer layer, improve the capacity gauge of electronics at negative electrode place, thus improve short-circuit current density and the fill factor, curve factor of organic solar batteries, finally prepare the organic solar batteries of high-photoelectric transformation efficiency.
2, the organic solar batteries device based on organic inorganic hybridization cathode buffer layer is ultra-thin, and outside removing substrate thickness, device gross thickness is no more than 200nm;
3, the organic solar batteries photoelectric conversion efficiency based on organic inorganic hybridization cathode buffer layer is high, preparation technology is simple, processing procedure is short, cost is low.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of organic solar batteries based on organic inorganic hybridization cathode buffer layer of the present invention.
For device described in embodiment 1 and embodiment 2, at AM1.5, (intensity is 100mW/cm to Fig. 2 2) irradiate under Current density-voltage characteristic curve.
Mark in Fig. 1: 1-substrate, 2-transparent conductive cathode ITO, 3-organic inorganic hybridization cathode buffer layer, 4-photoactive layer, 5-anode buffer layer, 6-metal anode.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Technical scheme of the present invention is to provide the ternary solar cell of a kind of high mobility organic molecule doping, as shown in Figure 1, this solar cell adopts reciprocal form structure, be followed successively by from top to bottom: substrate, transparent conductive cathode ITO, organic inorganic hybridization cathode buffer layer, photoactive layer, anode buffer layer, metal anode; The percentage by weight of organic inorganic hybridization cathode buffer layer consists of: ZnO nano particle 97-99.5% ， perylene dicarboximide micromolecular 0.5-3%.Described organic inorganic hybridization cathode buffer layer Zhong ， perylene dicarboximide micromolecular is the one in PTCDI-C8, PTCDI-Ph, PTCDI-C5 or MePTCDI.In described photoactive layer, electron donor material is P3HT.In described photoactive layer, electron acceptor material is PC 61bM or PC 71one in BM.Described anode buffer layer material is poly-PEDOT:PSS, and anode buffer layer thickness is 15-50nm.Described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100-300nm.Described backing material is glass or transparent polymer, described backing material is glass or transparent polymer, and described transparent polymer material is one or more in polyethylene, polymethyl methacrylate, Merlon, polyurethanes, vinyl chloride-vinyl acetate resin or polyacrylic acid.
Embodiment 1 (control group):
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO cathode buffer layer (5000rpm, 40s, 15nm), and formed film is carried out thermal annealing (200 DEG C, 60min); Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=8.5mA/cm 2, fill factor, curve factor (FF)=0.57, photoelectric conversion efficiency (PCE)=2.81%.
Embodiment 2:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C8 (99.5%:0.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm), and carries out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.1mA/cm 2, FF=0.61, PCE=3.22%.
Embodiment 3:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C8 (98.5%:1.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm), and carries out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.5mA/cm 2, FF=0.60, PCE=3.31%.
Embodiment 4:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C8 (97%:3%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm), and carries out thermal annealing (150 DEG C, 5min); Evaporation metal sun Ag (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.2mA/cm 2, FF=0.59, PCE=3.15%.
Embodiment 5:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-Ph (99.5%:0.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm), and carries out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), (AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=8.8mA/cm2, FF=0.59, PCE=3.01%.
Embodiment 6:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-Ph (98.5%:1.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm), and carries out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), (AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.2mA/cm 2, FF=0.61, PCE=3.25%.
Embodiment 7:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-Ph (97%:3%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm), and carries out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), (AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.1mA/cm 2, FF=0.58, PCE=3.06%.
Embodiment 8:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C5 (99.5%:0.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.5mA/cm2, FF=0.58, PCE=3.20%.
Embodiment 9:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C5 (98%:1.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.0mA/cm 2, FF=0.60, PCE=3.13%.
Embodiment 10:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C5 (97%:3%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.4mA/cm 2, FF=0.59, PCE=3.22%.
Embodiment 11:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:MePTCDI (99.5%:0.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.6mA/cm 2, FF=0.61, PCE=3.40%.
Embodiment 12:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:MePTCDI (98.5%:1.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.2mA/cm 2, FF=0.58, PCE=3.09%.
Embodiment 13:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:MePTCDI (97%:3%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and formed film is carried out thermal annealing (200 DEG C, 60min); Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=9.3mA/cm 2, FF=0.60, PCE=3.24%.
Embodiment 14:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO:PTCDI-C8 (99.5%:0.5%) organic inorganic hybridization cathode buffer layer (5000rpm, 40s, 15nm), and by formed film thermal annealing (200 DEG C, 60min) is carried out; Organic inorganic hybridization cathode buffer layer adopt spin coating to prepare P3HT:PC 71bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out thermal annealing (140 DEG C, 5min); Gather PEDOT:PSS solution at photoactive layer surface rotary coating and prepare anode buffer layer (3000rpm, 60s, 30nm), and carry out thermal annealing (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.(AM1.5,100mW/cm under standard test condition 2), record the V of device oC=0.58V, short circuit current J sC=10.1mA/cm 2, FF=0.60, PCE=3.51%.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1. based on an organic solar batteries for organic inorganic hybridization cathode buffer layer, it is characterized in that, this solar cell adopts reciprocal form structure, be followed successively by from top to bottom: substrate, transparent conductive cathode ITO, organic inorganic hybridization cathode buffer layer, photoactive layer, anode buffer layer, metal anode; The percentage by weight of organic inorganic hybridization cathode buffer layer consists of: ZnO nano particle 97-99.5% ， perylene dicarboximide micromolecular 0.5-3%.
2. the organic solar batteries based on organic inorganic hybridization cathode buffer layer according to claim 1, it is characterized in that, described organic inorganic hybridization cathode buffer layer Zhong perylene dicarboximide micromolecular is N, N '-dioctyl-3,4,9,10-perylene dicarboximide (PTCDI-C8) or N, N '-diphenyl-3,4,9,10-perylene dicarboximide (PTCDI-Ph) or N, N '-diamyl-3,4,9,10-perylene dicarboximide (PTCDI-C5) or N, N '-dimethyl-3,4,9,10-perylene dicarboximide (MePTCDI).
3. the organic solar batteries based on organic inorganic hybridization cathode buffer layer according to claim 1, is characterized in that, in described photoactive layer, electron donor material is P3HT.
4. the organic solar batteries based on organic inorganic hybridization cathode buffer layer according to claim 1, is characterized in that, in described photoactive layer, electron acceptor material is PC 61bM or PC 71bM.
5. the organic solar batteries based on organic inorganic hybridization cathode buffer layer according to claim 1, is characterized in that, described anode buffer layer material is poly-PEDOT:PSS, and anode buffer layer thickness is 15-50nm.
6. the organic solar batteries based on organic inorganic hybridization cathode buffer layer according to claim 1, is characterized in that, described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100-300nm.
7. the organic solar batteries based on organic inorganic hybridization cathode buffer layer according to claim 1, it is characterized in that, described backing material is glass or transparent polymer, and described transparent polymer material is one or more in polyethylene, polymethyl methacrylate, Merlon, polyurethanes, vinyl chloride-vinyl acetate resin or polyacrylic acid.
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CN106601916A (en) * 2017-01-24 2017-04-26 吉林大学 Organic solar cell based on heterojunction cathode buffer layer and preparation method thereof
CN111430547A (en) * 2020-03-19 2020-07-17 电子科技大学 Organic solar cell based on astaxanthin cathode buffer layer and preparation method thereof

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