CN105355670A - Five-junction solar energy cells including DBR structure - Google Patents
Five-junction solar energy cells including DBR structure Download PDFInfo
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- CN105355670A CN105355670A CN201510812277.9A CN201510812277A CN105355670A CN 105355670 A CN105355670 A CN 105355670A CN 201510812277 A CN201510812277 A CN 201510812277A CN 105355670 A CN105355670 A CN 105355670A
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 25
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- 101100001678 Emericella variicolor andM gene Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a five-junction solar energy cell including a DBR structure. According to the cell, a Ge single crystal slice is taken as a substrate, the Ge substrate is sequentially provided with a GaInAs/GaInP buffer layer, an AlGaAs/GaInAs DBR, a Ga1-3xIn3xNxAs1-x sub cell, an AlAs/AlGaAs DBR, a Ga1-3yIn3yNyAs1-y sub cell, an AlGaInAs sub cell and an AlGaInP sub cell, wherein the AlGaAs/GaInAs DBR is used for reflecting long-wave photons, and the AlAs/AlGaAs DBR is used for reflecting middle/long-wave photons. Through the cell, the photons can be absorbed and utilized secondarily by the sub cells, sub cell collection efficiency is improved, so photoelectric conversion efficiency of the five-junction solar energy cell is improved, moreover, thickness of the sub cells can be reduced, cell production efficiency is improved, and cell production cost is reduced.
Description
Technical field
The present invention relates to the technical field of photovoltaic, refer in particular to a kind of five-junction solar cell containing DBR (Distributed Bragg Reflection layer, DistributedBragReflector) structure.
Background technology
Solar cell, from technical development, can be divided into three major types: first generation crystal silicon solar batteries, second generation thin-film solar cells and third generation GaAs optically focused (tying) solar cell substantially.At present, gallium arsenide compound solar cell is widely used in concentrating photovoltaic power generation (CPV) system and spatial overlay apparently higher than crystal silicon battery because of its conversion efficiency.The GaInP/GaInAs/Ge three-joint solar cell that the predominate architecture of GaAs multijunction cell is made up of GaInP, GaInAs and Ge battery, overallly on battery structure keeps Lattice Matching, and band gap is combined as 1.85/1.40/0.67eV.But, for sunlight spectrum, the band gap combination of this three junction batteries is not best, due to difference in band gap distance larger between the sub-battery of GaInAs and Ge battery, having more that in the solar spectrum energy ratio that under this structure, battery at the bottom of Ge absorbs, battery and top battery absorb is a lot, the short circuit current of Ge battery is maximum can close to middle battery and the twice (V.Sabnis pushing up battery, H.Yuen, andM.Wiemer, AIPConf.Proc.1477 (2012) 14), due to the current limit reason of cascaded structure, this structure causes a big chunk solar energy can not by abundant conversion, limit the raising of battery performance.
Theory analysis shows, semiconducting compound four is tied and five-junction solar cell can optimize band gap combination, improves the photoelectric conversion efficiency of battery, but must keep Lattice Matching on Material selec-tion, the crystal mass of such guarantee epitaxial material.In the last few years, researcher finds in GaInNAs quaternary alloy material, by regulating the component of In and N, and keeps In component to be about 3 times of N component, the optical band gap of GaInNAs just can be made to reach 0.9 ~ 1.4eV, and with Ge substrate (or GaAs substrate) Lattice Matching.Therefore, can grow based on Ge substrate and obtain AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge five-junction solar cell, the band gap combined adjustable of this five junction battery is 2.0 ~ 2.1/1.6 ~ 1.7/1.25 ~ 1.35/0.95 ~ 1.05/0.67eV, close to the best band gap combination of five junction batteries, its ground spectrum light gathering efficiency limit can reach 50%, spatial spectral limiting efficiency can reach 36%, far away higher than traditional three junction batteries, this is mainly because compared to three junction batteries, five junction batteries can utilize sunlight more fully, improve open circuit voltage and the fill factor, curve factor of battery.
But, in the actual fabrication process of GaInNAs material, because GaInNAs needs effectively being incorporated to of low-temperature epitaxy guarantee atom N, a large amount of C atoms can be introduced in material simultaneously, cause concentration of background carriers too high, affect minority diffusion length.Now, if GaInNAs material layer is too thick, the effective collection to photo-generated carrier can not be formed; If GaInNAs material layer is too thin, the photon of corresponding wave band can not be absorbed completely.Therefore, below GaInNAs material layer, insert Bragg reflecting layer (DBR) structure can effectively solve this problem, reduce GaInNAs battery design thickness.In structural design, can by the sunlight regulating dbr structure to reflect corresponding wave band, make not reflected back by double absorption by the absorb photons of GaInNAs material for the first time, be equivalent to " the effective absorber thickness " that in a disguised form add GaInNAs, perfection solves the contradiction between the less and absorber thickness requirement of minority diffusion length.In addition, owing to providing the general organic source of the N source of atom N (being generally dimethylhydrazine source) cost ratio all will exceed a lot, reduce the production cost that GaInNAs layer thickness can also reduce battery.
To sum up, AlGaInP/AlGaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge five-junction solar cell containing dbr structure both can meet the theoretical design requirements of five junction batteries, the problem that in actual fabrication process, GaInNAs material minority diffusion length is less can be solved again, the production cost of battery can also be saved, farthest can play the advantage of five junction batteries, improve battery efficiency.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and shortcoming, a kind of five-junction solar cell containing dbr structure is proposed, the sub-battery collection efficiency of GaInNAs can be improved, increase the overall short circuit current of five junction batteries, and the sub-cell thickness of GaInNAs can be reduced, save production cost, the final advantage playing five junction batteries, improves cell integrated photoelectric conversion efficiency.
For achieving the above object, technical scheme provided by the present invention is: a kind of five-junction solar cell containing dbr structure, and include Ge substrate, described Ge substrate is p-type Ge single-chip; GaInAs/GaInP resilient coating, AlGaAs/GaInAsDBR, Ga is disposed with from the bottom to top according to stratiform overlaying structure on described Ge substrate
1-3xin
3xn
xas
1-xsub-battery, AlAs/AlGaAsDBR, Ga
1-3yin
3yn
yas
1-ythe sub-battery of sub-battery, AlGaInAs and the sub-battery of AlGaInP; Connected by the first tunnel junction between described GaInAs/GaInP resilient coating and AlGaAs/GaInAsDBR, described Ga
1-3xin
3xn
xas
1-xsub-battery is connected by the second tunnel junction with AlAs/AlGaAsDBR, described Ga
1-3yin
3yn
yas
1-ysub-battery is connected by the 3rd tunnel junction with the sub-battery of AlGaInAs, and the sub-battery of described AlGaInAs is connected by the 4th tunnel junction with the sub-battery of AlGaInP; Wherein, described AlGaAs/GaInAsDBR is used for reflect long photon, and described AlAs/AlGaAsDBR is used for longer-wave photons in reflection.
The reflection wavelength of described AlGaAs/GaInAsDBR is 1000 ~ 1300nm, and in this AlGaAs/GaInAsDBR, the logarithm of AlGaAs/GaInAs combination layer is 10 ~ 30 right.
Described Ga
1-3xin
3xn
xas
1-xga in sub-battery
1-3xin
3xn
xas
1-xthe optical band gap of material is 0.95 ~ 1.05eV.
The reflection wavelength of described AlAs/AlGaAsDBR is 800 ~ 1000nm, and in this AlAs/AlGaAsDBR, the logarithm of AlAs/AlGaAs combination layer is 10 ~ 30 right.
Described Ga
1-3yin
3yn
yas
1-yga in sub-battery
1-3yin
3yn
yas
1-ythe optical band gap of material is 1.25 ~ 1.35eV.
In the sub-battery of described AlGaInAs, the optical band gap of AlGaInAs material is 1.6 ~ 1.7eV.
In the sub-battery of described AlGaInP, the optical band gap of AlGaInP material is 2.0 ~ 2.1eV.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
Key of the present invention is DBR reflection layer structure to be incorporated in five-junction solar cell, at Ga
1-3xin
3xn
xas
1-xsub-battery and Ga
1-3yin
3yn
yas
1-yalGaAs/GaInAsDBR and AlAs/AlGaAsDBR is inserted respectively below sub-battery, by regulating dbr structure parameter, make not reflected back by double absorption by the absorb photons of GaInNAs material for the first time, be equivalent to " the effective absorber thickness " that in a disguised form add GaInNAs, perfection solves the contradiction between the less and absorber thickness requirement of minority diffusion length.This battery structure both can meet the theoretical design requirements of five junction batteries, the problem that in actual fabrication process, GaInNAs material minority diffusion length is less can be solved again, the production cost of battery can also be saved, farthest can play the advantage of five junction batteries, improve battery efficiency.
Accompanying drawing explanation
Fig. 1 is the five-junction solar cell structural representation containing dbr structure of the present invention.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
As shown in Figure 1, the five-junction solar cell containing dbr structure described in the present embodiment, include Ge substrate, described Ge substrate is p-type Ge single-chip; GaInAs/GaInP resilient coating, AlGaAs/GaInAsDBR, Ga is disposed with from the bottom to top according to stratiform overlaying structure on described Ge substrate
1-3xin
3xn
xas
1-xsub-battery, AlAs/AlGaAsDBR, Ga
1-3yin
3yn
yas
1-ythe sub-battery of sub-battery, AlGaInAs and the sub-battery of AlGaInP; Connected by the first tunnel junction between described GaInAs/GaInP resilient coating and AlGaAs/GaInAsDBR, described Ga
1-3xin
3xn
xas
1-xsub-battery is connected by the second tunnel junction with AlAs/AlGaAsDBR, described Ga
1-3yin
3yn
yas
1-ysub-battery is connected by the 3rd tunnel junction with the sub-battery of AlGaInAs, and the sub-battery of described AlGaInAs is connected by the 4th tunnel junction with the sub-battery of AlGaInP.
Described AlGaAs/GaInAsDBR is used for reflect long photon, and its reflection wavelength is 1000 ~ 1300nm, and in this AlGaAs/GaInAsDBR, the logarithm of AlGaAs/GaInAs combination layer is 10 ~ 30 right.
Described Ga
1-3xin
3xn
xas
1-xga in sub-battery
1-3xin
3xn
xas
1-xthe optical band gap of material is 0.95 ~ 1.05eV.
Described AlAs/AlGaAsDBR is used for longer-wave photons in reflection, and its reflection wavelength is 800 ~ 1000nm, and in this AlAs/AlGaAsDBR, the logarithm of AlAs/AlGaAs combination layer is 10 ~ 30 right.
Described Ga
1-3yin
3yn
yas
1-yga in sub-battery
1-3yin
3yn
yas
1-ythe optical band gap of material is 1.25 ~ 1.35eV.
In the sub-battery of described AlGaInAs, the optical band gap of AlGaInAs material is 1.6 ~ 1.7eV.
In the sub-battery of described AlGaInP, the optical band gap of AlGaInP material is 2.0 ~ 2.1eV.
Be the concrete preparation process of the above-mentioned five-junction solar cell containing dbr structure of the present embodiment below, its situation is as follows:
First, with 4 inches of p-type Ge single-chips for substrate, metal organic chemical vapor deposition technology (MOCVD) or molecular beam epitaxial growth technology (MBE) is then adopted to grow GaInAs/GaInP resilient coating, the first tunnel junction, AlGaAs/GaInAsDBR, Ga successively at the upper surface of Ge substrate
1-3xin
3xn
xas
1-xsub-battery, the second tunnel junction, AlAs/AlGaAsDBR, Ga
1-3yin
3yn
yas
1-ysub-battery, the 3rd tunnel junction, the sub-battery of AlGaInAs, the 4th tunnel junction and the sub-battery of AlGaInP, can complete the preparation of the five-junction solar cell containing dbr structure.
In sum, the present invention utilizes DBR reflection layer structure, and in conjunction with GaInNAs material own characteristic, at the Ga of five-junction solar cell
1-3xin
3xn
xas
1-xsub-battery and Ga
1-3yin
3yn
yas
1-yalGaAs/GaInAsDBR and AlAs/AlGaAsDBR is inserted respectively below sub-battery, by regulating dbr structure parameter, make not reflected back by double absorption by the absorb photons of GaInNAs material for the first time, be equivalent to " the effective absorber thickness " that in a disguised form add GaInNAs, this not only can meet the theoretical design requirements of five junction batteries, the problem that in actual fabrication process, GaInNAs material minority diffusion length is less can be solved again, the production cost of battery can also be saved, farthest can play the advantage of five junction batteries, significantly improve battery efficiency.In a word, the present invention can utilize solar energy more fully, improves the photoelectric conversion efficiency of GaAs multijunction cell, is worthy to be popularized.
The examples of implementation of the above are only the preferred embodiment of the present invention, not limit practical range of the present invention with this, therefore the change that all shapes according to the present invention, principle are done, all should be encompassed in protection scope of the present invention.
Claims (7)
1., containing a five-junction solar cell for dbr structure, include Ge substrate, it is characterized in that: described Ge substrate is p-type Ge single-chip; GaInAs/GaInP resilient coating, AlGaAs/GaInAsDBR, Ga is disposed with from the bottom to top according to stratiform overlaying structure on described Ge substrate
1-3xin
3xn
xas
1-xsub-battery, AlAs/AlGaAsDBR, Ga
1-3yin
3yn
yas
1-ythe sub-battery of sub-battery, AlGaInAs and the sub-battery of AlGaInP; Connected by the first tunnel junction between described GaInAs/GaInP resilient coating and AlGaAs/GaInAsDBR, described Ga
1-3xin
3xn
xas
1-xsub-battery is connected by the second tunnel junction with AlAs/AlGaAsDBR, described Ga
1-3yin
3yn
yas
1-ysub-battery is connected by the 3rd tunnel junction with the sub-battery of AlGaInAs, and the sub-battery of described AlGaInAs is connected by the 4th tunnel junction with the sub-battery of AlGaInP; Wherein, described AlGaAs/GaInAsDBR is used for reflect long photon, and described AlAs/AlGaAsDBR is used for longer-wave photons in reflection.
2. a kind of five-junction solar cell containing dbr structure according to claim 1, it is characterized in that: the reflection wavelength of described AlGaAs/GaInAsDBR is 1000 ~ 1300nm, in this AlGaAs/GaInAsDBR, the logarithm of AlGaAs/GaInAs combination layer is 10 ~ 30 right.
3. a kind of five-junction solar cell containing dbr structure according to claim 1, is characterized in that: described Ga
1-3xin
3xn
xas
1-xga in sub-battery
1-3xin
3xn
xas
1-xthe optical band gap of material is 0.95 ~ 1.05eV.
4. a kind of five-junction solar cell containing dbr structure according to claim 1, is characterized in that: the reflection wavelength of described AlAs/AlGaAsDBR is 800 ~ 1000nm, and in this AlAs/AlGaAsDBR, the logarithm of AlAs/AlGaAs combination layer is 10 ~ 30 right.
5. a kind of five-junction solar cell containing dbr structure according to claim 1, is characterized in that: described Ga
1-3yin
3yn
yas
1-yga in sub-battery
1-3yin
3yn
yas
1-ythe optical band gap of material is 1.25 ~ 1.35eV.
6. a kind of five-junction solar cell containing dbr structure according to claim 1, is characterized in that: in the sub-battery of described AlGaInAs, the optical band gap of AlGaInAs material is 1.6 ~ 1.7eV.
7. a kind of five-junction solar cell containing dbr structure according to claim 1, is characterized in that: in the sub-battery of described AlGaInP, the optical band gap of AlGaInP material is 2.0 ~ 2.1eV.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | Double-side growth four-junction solar cell with reflecting layer and preparation method thereof |
| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | It is applied to temperature monitoring method prepared by the joint solar cell containing dbr structure six |
| CN106449848A (en) * | 2016-10-28 | 2017-02-22 | 上海空间电源研究所 | Multi-junction solar cell containing composite multi-photon cavity |
| CN107221574A (en) * | 2017-07-19 | 2017-09-29 | 中山德华芯片技术有限公司 | Compound dbr structure applied to multijunction solar cell and preparation method thereof |
| CN107666110A (en) * | 2016-07-28 | 2018-02-06 | 三菱电机株式会社 | Optical semiconductor device |
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| CN203721752U (en) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | Three-junction solar cell with distributed Bragg reflector |
| US9018521B1 (en) * | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
| CN205385027U (en) * | 2015-11-19 | 2016-07-13 | 中山德华芯片技术有限公司 | Five knot solar cell that contain DBR structure |
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| US9018521B1 (en) * | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
| CN203721752U (en) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | Three-junction solar cell with distributed Bragg reflector |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | Double-side growth four-junction solar cell with reflecting layer and preparation method thereof |
| CN107666110A (en) * | 2016-07-28 | 2018-02-06 | 三菱电机株式会社 | Optical semiconductor device |
| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | It is applied to temperature monitoring method prepared by the joint solar cell containing dbr structure six |
| CN106449848A (en) * | 2016-10-28 | 2017-02-22 | 上海空间电源研究所 | Multi-junction solar cell containing composite multi-photon cavity |
| CN107221574A (en) * | 2017-07-19 | 2017-09-29 | 中山德华芯片技术有限公司 | Compound dbr structure applied to multijunction solar cell and preparation method thereof |
| CN107221574B (en) * | 2017-07-19 | 2023-04-18 | 中山德华芯片技术有限公司 | Composite DBR structure applied to multi-junction solar cell and preparation method thereof |
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| CN105355670B (en) | 2017-03-22 |
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Denomination of invention: A five junction solar cell with DBR structure Effective date of registration: 20210929 Granted publication date: 20170322 Pledgee: Industrial Bank Limited by Share Ltd. Zhongshan branch Pledgor: ZHONGSHAN DEHUA CHIP TECHNOLOGY Co.,Ltd. Registration number: Y2021980010236 |
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