CN105345621A - Novel silicon wafer flaw finishing technology - Google Patents
Novel silicon wafer flaw finishing technology Download PDFInfo
- Publication number
- CN105345621A CN105345621A CN201510708720.8A CN201510708720A CN105345621A CN 105345621 A CN105345621 A CN 105345621A CN 201510708720 A CN201510708720 A CN 201510708720A CN 105345621 A CN105345621 A CN 105345621A
- Authority
- CN
- China
- Prior art keywords
- side plate
- silicon chip
- silicon wafer
- groove
- special frock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 65
- 239000010703 silicon Substances 0.000 title claims abstract description 65
- 238000005516 engineering process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 11
- 230000007547 defect Effects 0.000 claims description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000005461 lubrication Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000003921 oil Substances 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a novel silicon wafer flaw finishing technology. The technological method includes the following steps: (1) a special tool is manufactured; (2) a silicon wafer is clamped; and (3) polishing is carried out through a grinding wheel, an original flaw part is subject to equipment edge polishing through the grinding wheel under the condition that the size of a silicon wafer is not influenced until the depth is 0.25 mm, no abnormal conditions exist when a user sees the surface of the silicon wafer, only slight grinding cracks can be seen from the lateral face, and no influence is generated on follow-up using of the silicon wafer. By means of machining, the edge flaw part of an original flaw silicon wafer is polished until the grade A product standard of the silicon wafer is met; meanwhile, the original nature of the silicon wafer is not changed, and the appearance flaws of the silicon wafer are repaired with the most direct, simple, convenient and effective method.
Description
Technical field
The present invention relates to a kind of dressing technique of new-type Defect, belong to solar energy silicon crystal chip aft-loaded airfoil field.
Background technology
Along with the mankind are to the increasing of energy demand, solar energy silicon crystal chip becomes a kind of emerging energy and occurs in face of people, and solar energy silicon crystal chip linear cutter technology is not qualification rate a hundred per cent, in cutting process, have a small amount of edge defect wafer produce, this type of silicon wafer is only slightly inferior to normal silicon chip in appearance, other functions and normal silicon wafer are all identical, can cause ample resources and cost waste, if do not abandon and be difficult to meet the need of market if abandon.
Summary of the invention
The object of the invention is the defect for prior art, a kind of dressing technique of new-type Defect is provided, make this part silicon chip reach silicon wafer category-A standard by again processing edging to the defective silicon chip of tool, use the most direct, easy, effective method reparation silicon chip open defect.
The present invention is achieved by the following technical solutions:
A dressing technique for new-type Defect, its technical method is as follows:
(1) special frock is made
Make the special frock of clamping silicon chip, described special frock comprises side plate, base plate, contiguous block and nut, described side plate has two pieces, described side plate is rectangular configuration, and corner place is provided with connecting hole group, described connecting hole group comprises the first connecting hole and the second connecting hole, the both sides of described side plate are respectively equipped with the first groove and the second groove, described first groove and the second groove are coaxially arranged, and all between two groups of connecting hole groups, described side plate bottom is provided with the 3rd groove and the first installing hole, described first installing hole has two, and lay respectively at the 3rd groove both sides, described side plate top is provided with the second installing hole, described second installing hole has two, and correspondingly with the first position of mounting hole respectively to arrange, described surface of side plate is provided with some locating holes,
Described base plate is iron galvanized sheet, and there is the 3rd installing hole, realize base plate through the 3rd installing hole with the first installing hole or the second installing hole by nut to be connected with side plate, described contiguous block has four, and there is connecting through hole group, realize side plate through the connecting hole group of side plate with connecting through hole group by nut and be connected with contiguous block;
(2) clamping silicon chip
1. stacked by defective for tool silicon chip, described defect is unified in a direction, and the degree of depth of described defect is less than or equal to 0.25mm;
2. when base plate and the side plate bottom of special frock are installed and are connected, 1. the silicon chip stacked through step (2) is placed between two blocks of side plates, the defect of silicon chip is butted on base plate, fills smooth sheet end to end subsequently and realizes silicon wafer clamping, and realize silicon chip location with nut through some locating holes in silicon chip both sides;
3. by the base plate of special frock from side plate bottom dismounting, and install with side plate top and be connected;
(3) grinder buffing
1. will be placed on grinding machine together with silicon chip entirety through step (2) special frock 3., open the magnet function of grinding machine, the base plate and the grinding machine that realize special frock are fixed;
2. run grinding machine, grinder wheel is polished to silicon chip by the speed that transverse direction, descending depth 0.01mm are per minute, jet lubrication oil is opened in polishing simultaneously, and polish to 0.25mm place equipment and automatically stop, now reparation terminates to obtain product.
The dressing technique of above-mentioned a kind of new-type Defect, wherein, the side plate corner of described special frock is fillet, and the interface of described first groove, the second groove and the 3rd groove and side plate is arc surface, and described side plate is PTFE material.
The dressing technique of above-mentioned a kind of new-type Defect, wherein, the side plate locating hole number of described special frock is 12, and described 12 locating holes are four lines row is three row.
Beneficial effect of the present invention is:
Edge defect silicon chip dressing technique of the present invention, its finishing principle is that native defect part is carried out device end polishing to the 0.25mm degree of depth by emery wheel in the situation not affecting die size, surface seems to have no exception, only find out there is slight polishing scratch from the side, any impact is not produced on the follow-up use of silicon chip; By this processing, the polishing of the edge defect part of native defect silicon chip is reached silicon chip A level product standard, do not change again the original character of silicon chip simultaneously, use the most direct, easy, effective method reparation silicon chip open defect.
When base plate and the side plate bottom of the special frock of the present invention are installed and are connected, the datum line effect that base plate aligns as Defect; When the base plate of special frock is from side plate bottom dismounting, and with side plate top installs be connected time, realization coordinates with the magnet function of grinding machine installs fixation.
In the present invention, silicon chip both sides are filled smooth sheet end to end and are realized silicon wafer clamping, prevent the injured damage of silicon chip in bruting process.
Accompanying drawing explanation
Fig. 1 is the partial cross front view of the special frock of the present invention.
Fig. 2 is the left view of the special frock of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further:
A dressing technique for new-type Defect, its technical method is as follows:
(1) special frock is made
Make the special frock of clamping silicon chip, described special frock comprises side plate 1, base plate 2, contiguous block 3 and nut 4, described side plate 1 has two pieces, described side plate 1 is PTFE material, described side plate 1 is rectangular configuration, side plate 1 four jiaos is fillet 5, and corner place is provided with connecting hole group 6, described connecting hole group 6 comprises the first connecting hole 7 and the second connecting hole 8, the both sides of described side plate 1 are respectively equipped with the first groove 9 and the second groove 10, described first groove 9 and the second groove 10 are coaxially arranged, and all between two groups of connecting hole groups 6, the 3rd groove 11 and the first installing hole 12 is provided with bottom described side plate 1, described first groove 9, second groove 10 and the 3rd groove 11 are arc surface 13 with the interface of side plate 1, described first installing hole 12 has two, and lay respectively at the 3rd groove 11 both sides, described side plate 1 top is provided with the second installing hole 14, described second installing hole 14 has two, and correspondingly with the first installing hole 12 position respectively to arrange, described side plate 1 surface is provided with 12 locating holes 15, in four lines, row is three row to described 12 locating holes 15,
Described base plate 2 is iron galvanized sheet, and there is the 3rd installing hole 16, realize base plate 2 through the 3rd installing hole 16 with the first installing hole 12 or the second installing hole 14 by nut 4 to be connected with side plate 1, described contiguous block 3 has four, and there is connecting through hole group 17, the connecting hole group 6 of passing side plate by nut 4 realizes side plate 1 with connecting through hole group 17 and is connected with contiguous block 3;
(2) clamping silicon chip
1. stacked by defective for tool silicon chip, described defect is unified in a direction, and the degree of depth of described defect is less than or equal to 0.25mm;
2. special frock base plate 2 with install bottom side plate 1 be connected time, 1. the silicon chip stacked through step (2) is placed between two blocks of side plates 1, the defect of silicon chip is butted on base plate 2, fill smooth sheet end to end subsequently in silicon chip both sides and realize silicon wafer clamping, and realize silicon chip location with nut through 12 locating holes 15;
3. the base plate 2 of special frock being dismantled bottom side plate 1, and install with side plate 1 top and be connected;
(3) grinder buffing
1. will be placed on grinding machine together with silicon chip entirety through step (2) special frock 3., open the magnet function of grinding machine, the base plate 2 realizing special frock is fixed with grinding machine;
2. run grinding machine, grinder wheel is polished to silicon chip by the speed that transverse direction, descending depth 0.01mm are per minute, jet lubrication oil is opened in polishing simultaneously, and polish to 0.25mm place equipment and automatically stop, now reparation terminates to obtain product.
Edge defect silicon chip dressing technique of the present invention, its finishing principle is that native defect part is carried out device end polishing to the 0.25mm degree of depth by emery wheel in the situation not affecting die size, surface seems to have no exception, only find out there is slight polishing scratch from the side, any impact is not produced on the follow-up use of silicon chip; By this processing, the polishing of the edge defect part of native defect silicon chip is reached silicon chip A level product standard, do not change again the original character of silicon chip simultaneously, use the most direct, easy, effective method reparation silicon chip open defect.
Invention embodiment disclosed above, enables professional and technical personnel in the field realize or uses the present invention.Those skilled in the art can carry out improvements and modifications not departing under the principle of the invention, and these improvements and modifications are also considered as dropping in the protection domain required by claim of the present invention.
Claims (3)
1. a dressing technique for new-type Defect, is characterized by, and its technical method is as follows:
(1) special frock is made
Make the special frock of clamping silicon chip, described special frock comprises side plate, base plate, contiguous block and nut, described side plate has two pieces, described side plate is rectangular configuration, and corner place is provided with connecting hole group, described connecting hole group comprises the first connecting hole and the second connecting hole, the both sides of described side plate are respectively equipped with the first groove and the second groove, described first groove and the second groove are coaxially arranged, and all between two groups of connecting hole groups, described side plate bottom is provided with the 3rd groove and the first installing hole, described first installing hole has two, and lay respectively at the 3rd groove both sides, described side plate top is provided with the second installing hole, described second installing hole has two, and correspondingly with the first position of mounting hole respectively to arrange, described surface of side plate is provided with some locating holes,
Described base plate is iron galvanized sheet, and there is the 3rd installing hole, realize base plate through the 3rd installing hole with the first installing hole or the second installing hole by nut to be connected with side plate, described contiguous block has four, and there is connecting through hole group, realize side plate through the connecting hole group of side plate with connecting through hole group by nut and be connected with contiguous block;
(2) clamping silicon chip
1. stacked by defective for tool silicon chip, described defect is unified in a direction, and the degree of depth of described defect is less than or equal to 0.25mm;
2. when base plate and the side plate bottom of special frock are installed and are connected, 1. the silicon chip stacked through step (2) is placed between two blocks of side plates, the defect of silicon chip is butted on base plate, fills smooth sheet end to end subsequently and realizes silicon wafer clamping, and realize silicon chip location with nut through some locating holes in silicon chip both sides;
3. by the base plate of special frock from side plate bottom dismounting, and install with side plate top and be connected;
(3) grinder buffing
1. will be placed on grinding machine together with silicon chip entirety through step (2) special frock 3., open the magnet function of grinding machine, the base plate and the grinding machine that realize special frock are fixed;
2. run grinding machine, grinder wheel is polished to silicon chip by the speed that transverse direction, descending depth 0.01mm are per minute, jet lubrication oil is opened in polishing simultaneously, and polish to 0.25mm place equipment and automatically stop, now reparation terminates to obtain product.
2. the dressing technique of a kind of new-type Defect as claimed in claim 1, it is characterized by, the side plate corner of described special frock is fillet, and the interface of described first groove, the second groove and the 3rd groove and side plate is arc surface, and described side plate is PTFE material.
3. the dressing technique of a kind of new-type Defect as claimed in claim 1, is characterized by, and the side plate locating hole number of described special frock is 12, and described 12 locating holes are four lines row is three row.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510708720.8A CN105345621B (en) | 2015-10-28 | 2015-10-28 | A kind of method for trimming of Defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510708720.8A CN105345621B (en) | 2015-10-28 | 2015-10-28 | A kind of method for trimming of Defect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105345621A true CN105345621A (en) | 2016-02-24 |
| CN105345621B CN105345621B (en) | 2017-06-20 |
Family
ID=55321756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510708720.8A Active CN105345621B (en) | 2015-10-28 | 2015-10-28 | A kind of method for trimming of Defect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105345621B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010007812A1 (en) * | 1999-04-09 | 2001-07-12 | Yoshihisa Naoi | Inner diameter grinding wheel and grinding apparatus using the wheel for grinding a cylindrical workpiece |
| CN203391136U (en) * | 2013-08-06 | 2014-01-15 | 保定天威英利新能源有限公司 | Silicon wafer reprocessing fixture |
| CN203622175U (en) * | 2013-12-30 | 2014-06-04 | 天津英利新能源有限公司 | Silicon slice grinding device |
| CN203853885U (en) * | 2014-04-09 | 2014-10-01 | 阿特斯(中国)投资有限公司 | Tool for edging silicon wafers |
| CN204053696U (en) * | 2014-09-17 | 2014-12-31 | 浙江昊能光电有限公司 | A kind of wafer chamfering machine |
-
2015
- 2015-10-28 CN CN201510708720.8A patent/CN105345621B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010007812A1 (en) * | 1999-04-09 | 2001-07-12 | Yoshihisa Naoi | Inner diameter grinding wheel and grinding apparatus using the wheel for grinding a cylindrical workpiece |
| CN203391136U (en) * | 2013-08-06 | 2014-01-15 | 保定天威英利新能源有限公司 | Silicon wafer reprocessing fixture |
| CN203622175U (en) * | 2013-12-30 | 2014-06-04 | 天津英利新能源有限公司 | Silicon slice grinding device |
| CN203853885U (en) * | 2014-04-09 | 2014-10-01 | 阿特斯(中国)投资有限公司 | Tool for edging silicon wafers |
| CN204053696U (en) * | 2014-09-17 | 2014-12-31 | 浙江昊能光电有限公司 | A kind of wafer chamfering machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105345621B (en) | 2017-06-20 |
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| Date | Code | Title | Description |
|---|---|---|---|
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| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Silicon wafer flaw finishing method Effective date of registration: 20191113 Granted publication date: 20170620 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. Registration number: Y2019320000279 |
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Date of cancellation: 20210127 Granted publication date: 20170620 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. Registration number: Y2019320000279 |
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Effective date of registration: 20210225 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 212200 No. 198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212200 No. 198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
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Denomination of invention: A method for repairing silicon wafer defects Effective date of registration: 20211125 Granted publication date: 20170620 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2021980013231 |
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Date of cancellation: 20221031 Granted publication date: 20170620 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2021980013231 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
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Denomination of invention: A method for repairing defects in silicon wafers Effective date of registration: 20221130 Granted publication date: 20170620 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2022980024342 |
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Date of cancellation: 20230317 Granted publication date: 20170620 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2022980024342 |
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