CN105336734A - LED vertical packaging structure - Google Patents
LED vertical packaging structure Download PDFInfo
- Publication number
- CN105336734A CN105336734A CN201510679635.3A CN201510679635A CN105336734A CN 105336734 A CN105336734 A CN 105336734A CN 201510679635 A CN201510679635 A CN 201510679635A CN 105336734 A CN105336734 A CN 105336734A
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- Prior art keywords
- substrate
- vertical
- conductive layer
- electrode
- led
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000004568 cement Substances 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 39
- 238000000605 extraction Methods 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000010009 beating Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009422 external insulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED vertical packaging structure. The LED vertical packaging structure comprises a vertical LED chip, a first substrate, a second substrate, a first electrode and a second electrode, and also includes a first conducting layer and a second conducting layer, wherein the vertical LED chip is arranged between the first substrate and the second substrate; the first conducting layer is arranged on the first substrate, and is electrically connected with the first electrode; the second conducting layer is arranged on the second substrate and is electrically connected with the second electrode; the vertical LED chip is provided with a top electrode and a bottom electrode; the top electrode is electrically connected with the first conducting layer; and the bottom electrode is electrically connected with the second conducting layer. The LED vertical packaging structure has the advantage of being simple in structure.
Description
Technical field
The present invention relates to lighting field, particularly the vertical encapsulating structure of a kind of LED.
Background technology
LED silk can realize 360 ° of full angle luminescences, and without the need to installing the optics of lens and so on additional, can apply with on the illuminating products such as crystal pendant lamp, wall lamp, candle lamp, bringing unprecedented experience.
Existing LED silk adopts glass substrate or sapphire substrate, fixes plurality of LEDs chip on surface, afterwards, utilizes the packaging body containing fluorescent material to encapsulate the LED chip be arranged on substrate.During work, the optical excitation fluorescent material that LED chip sends, sends white light after mixing.But because fluorescent material generally adopts rare earth material to make, as common YAG powder etc., its prices of raw and semifnished materials are higher; And packaging technology is more complicated, further raise the manufacturing cost of LED silk.In addition, fluorescent material must the whole outer surface of coated packaging body, otherwise has the problem that blue light spills.And the cladding process of fluorescent material is complicated, efficiency is low, cost is caused significantly to increase.Further, existing LED silk encapsulation scheme, when chip is positive cartridge chip, between chip, gold thread connects, when chip is flip-chip by the connection of cloth on substrate.Chips welding production efficiency is low, and yield is low; Substrate wiring has the substrate area that can occupy quite a few, causes light absorption, and encapsulation light extraction efficiency reduces.
Summary of the invention
In view of this, be necessary to provide the vertical encapsulating structure of the simple LED of a kind of structure.
The vertical encapsulating structure of a kind of LED, comprise vertical LED chip, first substrate and second substrate, first electrode and the second electrode, this vertical LED chip is arranged between this first substrate and second substrate, also comprise the first conductive layer and the second conductive layer, this first conductive layer to be arranged on this first substrate and to be electrically connected with this first electrode, this second conductive layer to be arranged on this second substrate and to be electrically connected with this second electrode, this vertical LED chip is provided with top electrodes and bottom electrode, this top electrodes is electrically connected with this first conductive layer, this bottom electrode is electrically connected with this second conductive layer.
Further, described first conductive layer and this first substrate are transparent or semitransparent material and make.
Further, described second conductive layer and this second substrate are transparent or semitransparent material and make.
Compared with prior art, the vertical encapsulating structure of LED of the present invention is by arranging vertical LED chip, first substrate and second substrate, the first electrode and the second electrode, utilize the first electrode, the second electrode is electrically connected this vertical LED chip with the second conductive layer through the first conductive layer, and is clamped between this first substrate and second substrate by vertical LED chip.Because first substrate and second substrate can provide protection to vertical LED chip; and make vertical LED chip and external insulation; this just eliminates encapsulated layer required in prior art; and in prior art, realize the step of beating gold thread or welding chip that is electrically connected between chip, make the vertical encapsulating structure of this LED have the simple advantage of structure.
Accompanying drawing explanation
Fig. 1 is the transversal profile schematic diagram of the vertical encapsulating structure of shown LED.
Description of reference numerals:
10 first substrate 50 first conductive electrode
20 second substrate 60 second conductive electrode
30 first conductive layer 70 vertical LED chips
40 second conductive layer 80 optical cements
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail.
Fig. 1 is the generalized section of the vertical encapsulating structure structure of LED of first embodiment of the invention, and the vertical encapsulating structure of this LED 100 comprises first substrate 10, second substrate 20, first conductive layer 30, second conductive layer 40, first electrode 50, second electrode 60, multiple vertical chip 70 and optical cement 80.On the whole, this the first conductive layer 30, second conductive layer 40, first electrode 50, second electrode 60, multiple vertical chip 70 and optical cement 80 are all arranged between this first substrate 10 and second substrate 20, and by optical cement 80 and conducting resinl (not shown) to connecting between above-mentioned each parts thus forming the vertical encapsulating structure 100 of this LED.
Please refer to Fig. 1, the vertical encapsulating structure entirety of this LED forms strip-shaped LED lamp silk structure, luminous to realize 4 π wide-angles.This first substrate 10 and this second substrate 20 are string configuration, can be the insulated substrates of any inorganic matter or organic substance material, such as glass, carborundum, sapphire, transparent ceramic, PET, PC etc.Certainly, luminous owing to will realize 4 π, this first substrate 10 should be made up of transparent or semitransparent material with second substrate 20.This first substrate 10 and second substrate 20 are for supporting and wrap up the miscellaneous part of the vertical encapsulating structure 100 of this LED.
Please refer to Fig. 1, this first conductive layer 30 and this second conductive layer 40 by conduct electricity and Heat Conduction Material is made, the heat that this vertical LED chip 70 produces to be delivered to this first substrate 10 or second substrate 20 or outside.Preferably, this first conductive layer 30 and this second conductive layer 40 are made up of Graphene or ITO; Graphene can be single-layer graphene or multi-layer graphene.The conductive layer be made up of Graphene has very high conductivity, can be used as conductive channel.Meanwhile, graphene layer has the light transmittance up to 97.7%, can allow the effective outgoing of light, improves light extraction efficiency.This first conductive layer 30 covers on this first substrate 10, and this second conductive layer 40 covers on this second substrate 20.
Please refer to Fig. 1, this first electrode 50 and this second electrode 60 are by conduct electricity and thermal conductive metallic material is made, this first electrode 50 and this first conductive layer 30 hot link, this second electrode 60 and this second conductive layer 40 hot link.External power source (not shown) is powered to described vertical LED chip 70 by this first electrode 50 and this second electrode 60.
Please refer to Fig. 1, described vertical LED chip 70 is provided with top electrodes (not shown) and bottom electrode (not shown), this top electrodes realizes being electrically connected by conducting resinl with this first conductive layer 30, and this bottom electrode realizes being electrically connected by conducting resinl with this second conductive layer 40.This first substrate 10 is string configuration with this second substrate 20, described vertical LED chip 70 is parallel to each other and is disposed between this first substrate 10 and this second substrate 20, described vertical LED chip 70 is electrically connected with this first conductive layer 30 and this second conductive layer 40 respectively, make the connection parallel with one another of these vertical LED chips 70, this first substrate 10, second substrate 20 and described vertical LED chip 70 form filamentray structure.Described vertical LED chip 70 is for sending the nanometer LED chip of white light.
Please refer to Fig. 1, this optical cement 80 is the glue of high transmission rate, is arranged between this first substrate 10 and this second substrate 20 to encapsulate this vertical LED chip 70.Refractive index these vertical LED chips 70 corresponding of this optical cement 80 are arranged, and may be used for the light extraction efficiency improving these vertical LED chips 70.
In sum, the vertical encapsulating structure 100 of LED of the present invention is by arranging vertical LED chip, first substrate and second substrate, the first electrode and the second electrode, utilize the first electrode, the second electrode is electrically connected this vertical LED chip with the second conductive layer through the first conductive layer, and is clamped between this first substrate and second substrate by vertical LED chip.Because first substrate and second substrate can provide protection to vertical LED chip; and make vertical LED chip and external insulation; this just eliminates encapsulated layer required in prior art; and in prior art, realize the step of beating gold thread or welding chip that is electrically connected between chip, make the vertical encapsulating structure of this LED have the simple advantage of structure.Because this vertical LED chip 70 is as the nanometer LED chip emitted white light, this just makes the vertical encapsulating structure 100 of this LED to use fluorescent material and directly to send white light.This just significantly reduces the cost of the vertical encapsulating structure 100 of this LED.Meanwhile, graphene layer or ITO indium tin oxide layer not only can printing opacities, and can conductive and heat-conductive, and their use will effectively promote the light extraction efficiency of the vertical encapsulating structure of this LED, heat-sinking capability and simplified structure.Particularly, when the quantity of these vertical LED chips 70 is multiple, this first conductive layer and the second conductive layer can be set to continuous print lamellar structure respectively, greatly simplifie electrical connection by parallel way.In addition, the vertical encapsulating structure 100 of this LED not only can make LED silk, and can LED panel lamp be made, only need the mode by multiple vertical LED chip 10 installs similar matrix to be arranged in the effect that can realize surface source luminescence between this first substrate and second substrate.
Claims (10)
1. the vertical encapsulating structure of LED, comprise vertical LED chip, first substrate and second substrate, first electrode and the second electrode, this vertical LED chip is arranged between this first substrate and second substrate, it is characterized in that, also comprise the first conductive layer and the second conductive layer, this first conductive layer to be arranged on this first substrate and to be electrically connected with this first electrode, this second conductive layer to be arranged on this second substrate and to be electrically connected with this second electrode, this vertical LED chip is provided with top electrodes and bottom electrode, this top electrodes is electrically connected with this first conductive layer, this bottom electrode is electrically connected with this second conductive layer.
2. the vertical encapsulating structure of LED according to claim 1, is characterized in that: this first conductive layer and this first substrate are transparent or semitransparent material and make.
3. the vertical encapsulating structure of LED according to claim 1, is characterized in that: this second conductive layer and this second substrate are transparent or semitransparent material and make.
4. the vertical encapsulating structure of LED according to claim 2, is characterized in that: this first conductive layer is made up of Heat Conduction Material, the heat that this vertical LED chip produces is delivered to this first substrate or outside.
5. the vertical encapsulating structure of LED according to claim 2, is characterized in that: this first conductive layer is made up of Graphene or ITO.
6. the vertical encapsulating structure of LED according to claim 1, is characterized in that: between this top electrodes and this first conductive layer, and realizes being electrically connected by one deck conducting resinl between this bottom electrode with this second conductive layer.
7. the vertical encapsulating structure of LED according to claim 1, is characterized in that, also comprise optical cement, and this optical cement is arranged between this first substrate and this second substrate to encapsulate this vertical LED chip.
8. the vertical encapsulating structure of LED according to claim 4, is characterized in that: this first electrode is by conduct electricity and thermal conductive metallic material is made, this first electrode and this first conductive layer hot link.
9. the vertical encapsulating structure of LED according to claim 1, it is characterized in that: comprise multiple vertical LED chip, this first substrate and this second substrate are string configuration, described vertical LED chip is parallel to each other and is disposed between this first substrate and this second substrate, described vertical LED chip is electrically connected with this first conductive layer and this second conductive layer respectively and makes that these vertical LED chips are parallel with one another to be connected, this first substrate, second substrate and described vertical LED chip composition filamentray structure.
10. the vertical encapsulating structure of LED according to claim 1, is characterized in that: this vertical LED chip is the nanometer LED chip sending white light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510679635.3A CN105336734A (en) | 2015-10-19 | 2015-10-19 | LED vertical packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510679635.3A CN105336734A (en) | 2015-10-19 | 2015-10-19 | LED vertical packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105336734A true CN105336734A (en) | 2016-02-17 |
Family
ID=55287162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510679635.3A Pending CN105336734A (en) | 2015-10-19 | 2015-10-19 | LED vertical packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105336734A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845813A (en) * | 2016-04-25 | 2016-08-10 | 陈海英 | LED luminescent device and LED light source |
| CN106024769A (en) * | 2016-07-17 | 2016-10-12 | 王培培 | Semiconductor lighting device |
| CN106382609A (en) * | 2016-10-18 | 2017-02-08 | 南昌大学 | LED lamp filament strip |
| CN106968391A (en) * | 2016-10-27 | 2017-07-21 | 厦门腾月光电科技有限公司 | Luminous building materials |
| CN107634136A (en) * | 2017-08-22 | 2018-01-26 | 广东欧曼科技股份有限公司 | A kind of dewdrop shape soft light bar |
| CN107785355A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | Transparent flexible GaN nanometer stick array LED devices and preparation method thereof |
| CN107785466A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | A kind of transparency LED based on Graphene electrodes and preparation method thereof |
| CN108389953A (en) * | 2018-03-05 | 2018-08-10 | 董秀玲 | A kind of LED light emitting device and its manufacturing method |
| EP3462489A1 (en) * | 2017-09-29 | 2019-04-03 | Facebook Technologies, LLC | Mesa shaped micro light emitting diode with bottom n-contact |
| US10418510B1 (en) | 2017-12-22 | 2019-09-17 | Facebook Technologies, Llc | Mesa shaped micro light emitting diode with electroless plated N-contact |
| CN110323312A (en) * | 2019-06-19 | 2019-10-11 | 武汉理工大学 | A kind of inorganic flexible optoelectronic device structure and preparation method thereof |
| CN110793562A (en) * | 2019-11-07 | 2020-02-14 | 山东浪潮人工智能研究院有限公司 | Detector module packaging structure and method for diamond sensor test |
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| CN101088140A (en) * | 2004-03-29 | 2007-12-12 | 连接技术公司 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| CN103210490A (en) * | 2010-08-27 | 2013-07-17 | 夸克星有限责任公司 | Solid state light sheet or strip for general illumination |
| CN205069637U (en) * | 2015-10-19 | 2016-03-02 | 漳州立达信光电子科技有限公司 | Perpendicular packaging structure of LED |
-
2015
- 2015-10-19 CN CN201510679635.3A patent/CN105336734A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088140A (en) * | 2004-03-29 | 2007-12-12 | 连接技术公司 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| CN103210490A (en) * | 2010-08-27 | 2013-07-17 | 夸克星有限责任公司 | Solid state light sheet or strip for general illumination |
| CN205069637U (en) * | 2015-10-19 | 2016-03-02 | 漳州立达信光电子科技有限公司 | Perpendicular packaging structure of LED |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845813A (en) * | 2016-04-25 | 2016-08-10 | 陈海英 | LED luminescent device and LED light source |
| CN105845813B (en) * | 2016-04-25 | 2018-10-26 | 陈海英 | A kind of LED light emitting device and LED light source |
| CN106024769A (en) * | 2016-07-17 | 2016-10-12 | 王培培 | Semiconductor lighting device |
| CN106024769B (en) * | 2016-07-17 | 2018-10-02 | 管伟 | A kind of semiconductor illumination device |
| CN107785466A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | A kind of transparency LED based on Graphene electrodes and preparation method thereof |
| CN107785355A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | Transparent flexible GaN nanometer stick array LED devices and preparation method thereof |
| CN106382609A (en) * | 2016-10-18 | 2017-02-08 | 南昌大学 | LED lamp filament strip |
| CN106968391A (en) * | 2016-10-27 | 2017-07-21 | 厦门腾月光电科技有限公司 | Luminous building materials |
| CN107634136A (en) * | 2017-08-22 | 2018-01-26 | 广东欧曼科技股份有限公司 | A kind of dewdrop shape soft light bar |
| EP3462489A1 (en) * | 2017-09-29 | 2019-04-03 | Facebook Technologies, LLC | Mesa shaped micro light emitting diode with bottom n-contact |
| US10418510B1 (en) | 2017-12-22 | 2019-09-17 | Facebook Technologies, Llc | Mesa shaped micro light emitting diode with electroless plated N-contact |
| CN108389953A (en) * | 2018-03-05 | 2018-08-10 | 董秀玲 | A kind of LED light emitting device and its manufacturing method |
| CN110323312A (en) * | 2019-06-19 | 2019-10-11 | 武汉理工大学 | A kind of inorganic flexible optoelectronic device structure and preparation method thereof |
| CN110323312B (en) * | 2019-06-19 | 2021-04-20 | 武汉理工大学 | Inorganic flexible optoelectronic device structure and preparation method thereof |
| CN110793562A (en) * | 2019-11-07 | 2020-02-14 | 山东浪潮人工智能研究院有限公司 | Detector module packaging structure and method for diamond sensor test |
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Application publication date: 20160217 |
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