CN105336375A - Memory and programming, non-redundancy and redundancy reading and operating methods - Google Patents
Memory and programming, non-redundancy and redundancy reading and operating methods Download PDFInfo
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- CN105336375A CN105336375A CN201410369927.2A CN201410369927A CN105336375A CN 105336375 A CN105336375 A CN 105336375A CN 201410369927 A CN201410369927 A CN 201410369927A CN 105336375 A CN105336375 A CN 105336375A
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Abstract
The invention discloses a memory and programming, non-redundancy and redundancy reading and operating methods. The memory comprises memory units arranged in M rows and N columns and at least one first MOS transistor, wherein M is greater than or equal to 1, N is greater than or equal to 2, and N is even. Each memory unit comprises a second MOS transistor and a fuse. In the same memory unit, a first end of the second MOS transistor is connected with a first end of the fuse. The second ends of the fuses located in the same column of the memory units are connected together. A first end of the nth first MOS transistor is connected with a first end of the fuse located in the (2n-1)th memory unit, and a second end of the nth first MOS transistor is connected with a first end of the fuse located in the (2n)th memory unit, wherein n is greater than or equal to 1.
Description
Technical field
The present invention relates to a kind of storer and programming, irredundant and redundancy reads, method of operating.
Background technology
Fuse (efuse) technology is a kind of technology grown up according to polysilicon fuse characteristic.The initial resistivity value of fuse is very little, and when having big current through fuse, fuse is fused, and its resistance value doubles.Therefore, the storage element be made up of fuse is to judge that whether fuse is learnt the data of its internal reservoir by fusing.
As shown in Figure 1, existing fuse memory comprises: m bar wordline, a n column selection transistor, n bit lines, a n sense amplifier and fuse storage array, m and n is positive integer.
M article wordline comprises: the 1st article of wordline WL1, the 2nd article wordline WL2 ..., m article wordline WLm.
N column selection transistor comprises: the 1st column selection transistor M1, the 2nd column selection transistor M2, the 3rd column selection transistor M3 ..., the n-th column selection transistor Mn, the source electrode of described n column selection transistor all connects supply voltage VDD.
N bit lines comprises: the 1st bit lines BL1, the 2nd bit lines BL2, the 3rd bit lines BL3 ..., the n-th bit lines BLn, the drain electrode of described n bit lines and described n column selection transistor connects one to one.
N sense amplifier comprises: the 1st sense amplifier SA1, the 2nd sense amplifier SA2, the 3rd sense amplifier SA3 ..., the n-th sense amplifier SAn, a described n sense amplifier and described n bit lines connect one to one.
Fuse storage array comprises: the storage unit of the capable n row arrangement in m.Described m bar wordline and described m line storage unit one_to_one corresponding, described n bit lines and described n array storage unit one_to_one corresponding, a wordline and the corresponding storage unit of a bit lines.
Each storage unit comprises: row selects transistor and fuse.Described row selects the grid of transistor to connect the wordline corresponding with described storage unit, described row selects the drain electrode of transistor to connect the first end of described fuse, described row selects the source ground GND of transistor, and the second end of described fuse connects the bit line corresponding with described storage unit.For the storage unit 10 that the 1st row 1 arranges, the corresponding 1st article of wordline WL1 and the 1st bit lines BL1 of storage unit 10.Storage unit 10 comprises row and selects transistor M0 and fuse F0, row selects the grid of transistor M0 to connect the 1st article of wordline WL1, row selects the drain electrode of transistor M0 to connect the first end of fuse F0, and row selects the source ground GND of transistor M0, and second end of fuse F0 connects the 1st bit lines BL1.
Column selection transistor turns or cut-off can be controlled by applying corresponding voltage to the grid of column selection transistor, selecting transistor turns or cut-off by applying the corresponding voltage row that can control in a line storage unit to wordline.When the row in storage unit select transistor turns and the column selection transistor corresponding with this storage unit also conducting time, the fuse being arranged in this storage unit can be fused.Fuse in storage unit also can be referred to as to carry out programming operation to this storage unit by the operation fused.Whether fuse can be judged according to resistance value by fusing, is considered as fuse and is fused, be considered as fuse do not fused when this resistance threshold of resistance value when resistance value is greater than certain resistance threshold.
Just programming operation cannot be carried out again, so storage unit can only by programming once in programming process after fuse in storage unit is fused.Usually data 1 are considered as the data need carrying out programming operation, that is, the fuse in the storage unit of preserving data 1 that need fuse when programming to data 1, preserves the fuse in the storage unit of data 0 without the need to fusing when programming to data 0.
But storage unit easily occurs program fail, namely after programming operation, fuse is not fused yet, and mistake appears in these data causing storage unit to be preserved, thus reads erroneous results, the production yield step-down of storer.
Summary of the invention
The problem that the present invention solves is that the production yield of existing storer is lower.
For solving the problem, the invention provides a kind of storer, comprising: the storage unit of the capable N row arrangement in M and at least one first metal-oxide-semiconductor, M >=1, N >=2, N is even number, and described storage unit comprises: the second metal-oxide-semiconductor and fuse;
In same storage unit, the first end of the second metal-oxide-semiconductor connects the first end of fuse;
The second end being arranged in the fuse of same array storage unit links together;
The first end of the n-th the first metal-oxide-semiconductors connects the first end being arranged in the fuse of 2n-1 storage unit, and the second end connection of described the n-th the first metal-oxide-semiconductors is arranged in the first end of the fuse of 2n storage unit, n >=1.
Optionally, described storer also comprises: N number of 3rd metal-oxide-semiconductor and N number of sense amplifier;
The input end that the first end of jth the 3rd metal-oxide-semiconductor connects a jth sense amplifier and the second end of fuse being arranged in jth array storage unit, N >=j >=1.
Optionally, described storer also comprises: N number of 4th metal-oxide-semiconductor;
The first end of kth the 4th metal-oxide-semiconductor connects the second end being arranged in the fuse of kth array storage unit, N >=k >=1.
Optionally, described storer also comprises: N number of 4th metal-oxide-semiconductor;
The first end of kth the 4th metal-oxide-semiconductor connects the second end being arranged in the fuse of a kth storage unit, N >=k >=1.
Optionally, the first end of described 4th metal-oxide-semiconductor is drain electrode or source electrode.
The present invention also provides a kind of programmed method of above-mentioned storer, comprising:
The 3rd metal-oxide-semiconductor making the fuse in the second metal-oxide-semiconductor in storage unit to be programmed, described storage unit to be programmed and be connected with described storage unit to be programmed forms path, with by data programing to described storage unit to be programmed.
Optionally, the programmed method of described storer also comprises:
Apply the second end of the second metal-oxide-semiconductor in the first voltage to described storage unit to be programmed;
Apply second end of the second voltage to the 3rd metal-oxide-semiconductor be connected with described storage unit to be programmed, the magnitude of voltage of described first voltage and the second voltage is unequal.
Optionally, the further comprising the steps of a of the programmed method of described storer is at least one in step e:
A, makes the sense amplifier be connected with described storage unit to be programmed be in disabled state;
B, makes the first metal-oxide-semiconductor be connected with described storage unit to be programmed be in cut-off state;
C, makes the second metal-oxide-semiconductor in non-programmed storage unit be in cut-off state;
D, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be programmed or the 3rd metal-oxide-semiconductor be in cut-off state;
E, makes the sense amplifier be not connected with described storage unit to be programmed be in disabled state.
The present invention also provides a kind of programmed method of above-mentioned storer, comprising:
The 4th metal-oxide-semiconductor making the fuse in the second metal-oxide-semiconductor in storage unit to be programmed, described storage unit to be programmed and be connected with described storage unit to be programmed forms path, with by data programing to described storage unit to be programmed.
Optionally, the programmed method of described storer also comprises:
Apply the second end of the second metal-oxide-semiconductor in the first voltage to described storage unit to be programmed;
Apply second end of the second voltage to the 4th metal-oxide-semiconductor be connected with described storage unit to be programmed, the magnitude of voltage of described first voltage and the second voltage is unequal.
Optionally, the further comprising the steps of a of the programmed method of described storer is at least one in steps d:
A, makes the first metal-oxide-semiconductor of being connected with described storage unit to be programmed or the 3rd metal-oxide-semiconductor be in cut-off state;
B, makes the sense amplifier be connected with described storage unit to be programmed be in disabled state;
C, makes the second metal-oxide-semiconductor in non-programmed storage unit be in cut-off state;
D, makes the first metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor or the 4th metal-oxide-semiconductor be not connected with described storage unit to be programmed be in cut-off state.
The present invention also provides a kind of irredundant read method of above-mentioned storer, comprising:
The sense amplifier making the fuse in the second metal-oxide-semiconductor in storage unit to be read, described storage unit to be read and be connected with described storage unit to be read forms path, to read the data of described storage unit to be read.
Optionally, the irredundant read method of described storer also comprises:
Apply the second end of the second metal-oxide-semiconductor in the supply voltage of described storer or ground voltage to described storage unit to be read.
Optionally, the further comprising the steps of a of irredundant read method of described storer is at least one in steps d:
A, makes the first metal-oxide-semiconductor of being connected with described storage unit to be read or the 3rd metal-oxide-semiconductor be in cut-off state;
B, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
C, makes the sense amplifier be not connected with described storage unit to be read be in disabled state;
D, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be read or the 3rd metal-oxide-semiconductor be in cut-off state.
The present invention also provides a kind of method of operating of above-mentioned storer, comprising:
P+1 array storage unit is set to the p row redundant storage unit corresponding with p array storage unit, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit;
By data programing to be programmed corresponding for described p array storage unit to described p row redundant storage unit.
Optionally, described step p+1 array storage unit being set to the p row redundant storage unit corresponding with p array storage unit performs when meeting the following conditions:
According to data to be programmed corresponding to described p array storage unit to described p array storage unit program fail.
Optionally, the method for operating of described storer also comprises:
When the to be programmed data corresponding according to described p array storage unit are programmed successfully to described p array storage unit, by data programing to be programmed corresponding for described p+1 array storage unit to described p+1 array storage unit.
Optionally, according to the programmed method of above-mentioned storer by data programing to be programmed corresponding for described p+1 array storage unit to described p+1 array storage unit.
Optionally, according to the programmed method of above-mentioned storer by data programing to be programmed corresponding for described p array storage unit to described p row redundant storage unit.
The present invention also provides a kind of redundancy read method of above-mentioned storer, comprising:
The fuse of the storage unit to be read in the fuse of the redundant storage unit to be read in p row redundant storage unit, the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p row redundant storage unit and the first metal-oxide-semiconductor be connected with described p array storage unit and the 3rd metal-oxide-semiconductor is made to form path, to read data, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit.
Optionally, described p row redundant storage unit is arranged when described p array storage unit program fail.
Optionally, the redundancy read method of described storer also comprises:
Apply the supply voltage of described storer or ground voltage the second end to the 3rd metal-oxide-semiconductor be connected with described p array storage unit.
Optionally, the further comprising the steps of a of redundancy read method of described storer is at least one in step g:
A, makes the 3rd metal-oxide-semiconductor be connected with described p row redundant storage unit be in cut-off state;
B, makes the sense amplifier be connected with described p array storage unit be in disabled state;
C, makes the second metal-oxide-semiconductor in described p array storage unit or p row redundant storage unit be in cut-off state;
D, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
E, makes the sense amplifier be not connected with described p row redundant storage unit or p array storage unit be in disabled state;
F, makes the first metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state;
G, makes the 3rd metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state.
The present invention also provides a kind of redundancy read method of above-mentioned storer, comprising:
The fuse of the storage unit to be read in the fuse of the redundant storage unit to be read in p row redundant storage unit, the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p array storage unit and the first metal-oxide-semiconductor be connected with described p row redundant storage unit and the 3rd metal-oxide-semiconductor is made to form path, to read data, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit.
Optionally, described p row redundant storage unit is arranged when described p array storage unit program fail.
Optionally, the redundancy read method of described storer also comprises:
Apply the supply voltage of described storer or ground voltage the second end to the 3rd metal-oxide-semiconductor be connected with described p row redundant storage unit.
Optionally, the further comprising the steps of a of redundancy read method of described storer is at least one in step g:
A, makes the 3rd metal-oxide-semiconductor be connected with described p array storage unit be in cut-off state;
B, makes the sense amplifier be connected with described p row redundant storage unit be in disabled state;
C, makes the second metal-oxide-semiconductor in described p array storage unit or p row redundant storage unit be in cut-off state;
D, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
E, makes the sense amplifier be not connected with described p row redundant storage unit or p array storage unit be in disabled state;
F, makes the first metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state;
G, makes the 3rd metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state
Compared with prior art, technical solution of the present invention provides a kind of new memory construction, even if to this memory program failure, also can obtain correct reading data, improve the yield of storer.
Accompanying drawing explanation
Fig. 1 is a structural representation of existing storer;
Fig. 2 is a structural representation of storer of the present invention;
Fig. 3 is another structural representation of storer of the present invention;
Fig. 4 is the another structural representation of storer of the present invention;
Fig. 5 is the schematic diagram of storer of the present invention in a programming process;
Fig. 6 is the schematic diagram of storer of the present invention in another programming process;
Fig. 7 is the schematic diagram of storer of the present invention in an irredundant reading process;
Fig. 8 is the schematic diagram of storer of the present invention in another irredundant reading process;
Fig. 9 is the schematic diagram of storer of the present invention in a redundancy reading process;
Figure 10 is the schematic diagram of storer of the present invention in another redundancy reading process.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
As shown in Figure 2, the embodiment of the present invention provides a kind of storer, comprising: the storage unit of the capable N row arrangement in M and at least one first metal-oxide-semiconductor, M >=1, N >=2, and N is even number, and described storage unit comprises: the second metal-oxide-semiconductor and fuse; In same storage unit, the first end of the second metal-oxide-semiconductor connects the first end of fuse; The second end being arranged in the fuse of same array storage unit links together; The first end of the n-th the first metal-oxide-semiconductors connects the first end being arranged in the fuse of 2n-1 storage unit, and the second end connection of described the n-th the first metal-oxide-semiconductors is arranged in the first end of the fuse of 2n storage unit, n >=1.
The quantity of described first metal-oxide-semiconductor is M × N/2.The first end of described first metal-oxide-semiconductor for drain electrode, the second end be source electrode, or the first end of described first metal-oxide-semiconductor be source electrode, the second end is drain electrode.The first end of described second metal-oxide-semiconductor for drain electrode, the second end be source electrode, or the first end of described second metal-oxide-semiconductor be source electrode, the second end is drain electrode.
For the 1st row and the 2nd array storage unit, in the storage unit that the 1st row 1 arranges, the first end of the second metal-oxide-semiconductor 11 connects the first end of fuse f11; In the storage unit that the 1st row 2 arranges, the first end of the second metal-oxide-semiconductor 12 connects the first end of fuse f12; . in the storage unit of capable 1 row of M, the first end of the second metal-oxide-semiconductor M1 connects the first end of fuse fM1; In the storage unit of capable 2 row of M, the first end of the second metal-oxide-semiconductor M2 connects the first end of fuse fM2.
Be arranged in the 1st fuse f11 of the 1st array storage unit the second end ... link together with second end of M fuse fM1; Be arranged in the 1st fuse f12 of the 2nd array storage unit the second end ... link together with second end of M fuse fM2.
The first end of the 1st the first metal-oxide-semiconductor W11 connects the first end being arranged in the 1st fuse f11 of the 1st array storage unit, and second end of the 1st the first metal-oxide-semiconductor W11 connects the first end being arranged in the 1st fuse f12 of the 2nd array storage unit; The first end of M the first metal-oxide-semiconductor W1M connects the first end being arranged in M fuse fM1 of the 1st array storage unit, and the first end of M the first metal-oxide-semiconductor W1M connects the first end being arranged in M fuse fM2 of the 2nd array storage unit.
As shown in Figure 3, storer described in the embodiment of the present invention can also comprise: N number of 3rd metal-oxide-semiconductor and N number of sense amplifier, the input end that the first end of jth the 3rd metal-oxide-semiconductor connects a jth sense amplifier and the second end of fuse being arranged in jth array storage unit, N >=j >=1.
Concrete, described N number of 3rd metal-oxide-semiconductor comprises: the 1st the 3rd metal-oxide-semiconductor B1, the 2nd the 3rd metal-oxide-semiconductor B2, the 3rd the 3rd metal-oxide-semiconductor B3, the 4th the 3rd metal-oxide-semiconductor B4 ... N-1 the 3rd metal-oxide-semiconductor BN-1 and N number of 3rd metal-oxide-semiconductor BN.
Described N number of sense amplifier comprises: the 1st sense amplifier SA1, the 2nd sense amplifier SA2, the 3rd sense amplifier SA3, the 4th sense amplifier SA4 ... N-1 sense amplifier SAN-1 and N number of sense amplifier SAN.
In the present embodiment, the first end of described 3rd metal-oxide-semiconductor for drain electrode, the second end be source electrode, or the first end of described 3rd metal-oxide-semiconductor be source electrode, the second end is drain electrode.
Still be described further for the 1st row and the memory construction of the 2nd array storage unit to the present embodiment below.
The first end of the 1st the 3rd metal-oxide-semiconductor B1 connect the 1st sense amplifier SA1 input end and be arranged in the 1st array storage unit the 1st fuse f11 the second end ... with second end of M fuse fM1.
The first end of the 2nd the second metal-oxide-semiconductor B2 connect the 2nd sense amplifier SA2 input end and be arranged in the 2nd array storage unit the 1st fuse f12 the second end ... with second end of M fuse fM2.
As shown in Figure 4, storer described in the embodiment of the present invention can also comprise: N number of 4th metal-oxide-semiconductor, and the first end of kth the 4th metal-oxide-semiconductor connects the second end being arranged in the fuse of a kth storage unit, N >=k >=1.
Described N number of 4th metal-oxide-semiconductor comprises: the 1st the 4th metal-oxide-semiconductor S1, the 2nd the 4th metal-oxide-semiconductor S2, the 3rd the 4th metal-oxide-semiconductor S3, the 4th the 4th metal-oxide-semiconductor S4 ... N-1 the 4th metal-oxide-semiconductor SN-1 and N number of 4th metal-oxide-semiconductor SN.
The first end of the 1st the 4th metal-oxide-semiconductor S1 connects the second end being arranged in the fuse of the 1st array storage unit, the first end of the 2nd the 4th metal-oxide-semiconductor S2 connects the second end being arranged in the fuse of the 2nd array storage unit, the first end of the 3rd the 4th metal-oxide-semiconductor S3 connects the second end being arranged in the fuse of the 3rd array storage unit, the first end of the 4th the 4th metal-oxide-semiconductor S4 connects the second end being arranged in the fuse of the 4th array storage unit, N-1 the 4th metal-oxide-semiconductor SN-1 connects the second end being arranged in the fuse of N-1 array storage unit, N number of 4th metal-oxide-semiconductor SN connects the second end being arranged in the fuse of N array storage unit.
The first end of described 4th metal-oxide-semiconductor for drain electrode, the second end be source electrode, or the first end of described 4th metal-oxide-semiconductor be source electrode, the second end is drain electrode.
Storer described in corresponding diagram 3 embodiment, the invention provides a kind of programmed method of storer, described programmed method comprises: step S11, the 3rd metal-oxide-semiconductor making the fuse in the second metal-oxide-semiconductor in storage unit to be programmed, described storage unit to be programmed and be connected with described storage unit to be programmed forms path, with by data programing to described storage unit to be programmed.
The 3rd metal-oxide-semiconductor be connected with storage unit described in the present embodiment refers to the 3rd metal-oxide-semiconductor be directly connected with the fuse in this storage unit.
As shown in Figure 5, suppose that the storage unit that the 1st row 1 arranges is storage unit to be programmed, then the 3rd metal-oxide-semiconductor be connected with storage unit to be programmed is the 3rd metal-oxide-semiconductor B1 be connected with the 1st row 1 array storage unit.
Fuse in the second metal-oxide-semiconductor in described storage unit to be programmed, described storage unit to be programmed and the 3rd metal-oxide-semiconductor be connected with described storage unit to be programmed form path and refer to that the second metal-oxide-semiconductor in storage unit to be programmed, the fuse in described storage unit to be programmed and the 3rd metal-oxide-semiconductor be connected with described storage unit to be programmed form the path that can be used for electric current to flow through.
Concrete, step S11 can comprise: step S111, makes the second metal-oxide-semiconductor in described storage unit to be programmed and the 3rd metal-oxide-semiconductor that is connected with described storage unit to be programmed is in conducting state.In order to make the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor be in conducting state, high level voltage, such as supply voltage VDD can be applied at the grid of the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor, in figure, representing high level voltage with " 1 ".
During by data programing to described storage unit to be programmed, can following steps be performed:
Step S112, applies the second end of the second metal-oxide-semiconductor in the first voltage to described storage unit to be programmed;
Step S113, apply second end of the second voltage to the 3rd metal-oxide-semiconductor be connected with described storage unit to be programmed, the magnitude of voltage of described first voltage and the second voltage is unequal.
Applying the unequal voltage of magnitude of voltage to the second end of the second end of the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor is fuse in order to fuse in unit to be programmed, and therefore, the voltage difference of the first voltage and the second voltage can be determined by the electric current needed for blow out fuse.Concrete, second end of the 3rd metal-oxide-semiconductor B1 is applied to program voltage AVDD, applies ground voltage GND to the second end of the second metal-oxide-semiconductor 11, and the magnitude of voltage of described program voltage AVDD is greater than the magnitude of voltage of described memory power voltage; Because the 3rd metal-oxide-semiconductor B1 and the second metal-oxide-semiconductor 11 are in conducting state, so electric current can flow through fuse f11 until the second end of the second metal-oxide-semiconductor 11 from second end of the 3rd metal-oxide-semiconductor B1.By the control to size of current and duration, can blow out fuse f11, to realize the programming to the 1st row 1 array storage unit.Similar, also ground voltage GND can be applied to second end of the 3rd metal-oxide-semiconductor B1, when program voltage AVDD is applied to the second end of the second metal-oxide-semiconductor 11, electric current flows through fuse f11 until second end of the 3rd metal-oxide-semiconductor B1 from the second end of the second metal-oxide-semiconductor 11, to realize the programming to the 1st row 1 array storage unit.
Treat memory cells when programming, the second metal-oxide-semiconductor in non-programmed storage unit can be made to be in cut-off state.In order to the second metal-oxide-semiconductor realized in non-programmed storage unit is in cut-off state, can apply low level voltage, such as ground voltage GND at its grid, " 0 " represents low level voltage.Described non-programmed storage unit refers to: except the storage unit except storage unit to be programmed.Such as, when storage unit to be programmed is the 1st row 1 array storage unit, the storage unit except the 1st row 1 array storage unit is non-programmed storage unit.By applying low level voltage " 0 " to the grid of the second metal-oxide-semiconductor in non-programmed storage unit, the second metal-oxide-semiconductor in non-programmed storage unit is made to be in cut-off state.
Optionally, what can also perform in following steps in programming process is one or more:
Step S114, makes the sense amplifier be connected with described storage unit to be programmed be in disabled state;
Step S115, makes the first metal-oxide-semiconductor be connected with described storage unit to be programmed be in cut-off state;
Step S116, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be programmed or the 3rd metal-oxide-semiconductor be in cut-off state;
Step S17, makes the sense amplifier be not connected with described storage unit to be programmed be in disabled state.
Sense amplifier is in disabled state and can realizes by applying disable signal to sense amplifier.
Above-mentioned programmed method utilizes the 3rd metal-oxide-semiconductor and storage unit to be programmed to form the path needed for programming, the storer described in corresponding diagram 4 embodiment, and the 4th metal-oxide-semiconductor and storage unit to be programmed also can be utilized to form the path needed for programming.Concrete, the programmed method of described storer comprises: S12, the 4th metal-oxide-semiconductor making the fuse in the second metal-oxide-semiconductor in storage unit to be programmed, described storage unit to be programmed and be connected with described storage unit to be programmed forms path, with by data programing to described storage unit to be programmed.
Described the 4th metal-oxide-semiconductor be connected with storage unit refers to the 4th metal-oxide-semiconductor be directly connected with the fuse in this storage unit.
As shown in Figure 6, the storage unit still arranged for the 1st row 1 is that storage unit to be programmed is described.The 4th metal-oxide-semiconductor be connected with storage unit to be programmed is the 4th metal-oxide-semiconductor S1 be connected with the 1st row 1 array storage unit.
Fuse in the second metal-oxide-semiconductor in described storage unit to be programmed, described storage unit to be programmed and the 4th metal-oxide-semiconductor be connected with described storage unit to be programmed form path and refer to that the second metal-oxide-semiconductor in storage unit to be programmed, the fuse in described storage unit to be programmed and the 4th metal-oxide-semiconductor be connected with described storage unit to be programmed form the path that can be used for electric current to flow through.
Concrete, step S12 can comprise: step S121, makes the second metal-oxide-semiconductor in described storage unit to be programmed and the 4th metal-oxide-semiconductor that is connected with described storage unit to be programmed is in conducting state.During by data programing to described storage unit to be programmed, can following steps be performed:
Step S122, applies the second end of the second metal-oxide-semiconductor in the first voltage to described storage unit to be programmed;
Step S123, apply second end of the second voltage to the 4th metal-oxide-semiconductor be connected with described storage unit to be programmed, the magnitude of voltage of described first voltage and the second voltage is unequal.
Concrete, second end of the 4th metal-oxide-semiconductor S1 is applied to program voltage AVDD, applies ground voltage GND to the second end of the second metal-oxide-semiconductor 11, because the 4th metal-oxide-semiconductor S1 and the second metal-oxide-semiconductor 11 are in conducting state, so electric current can flow through fuse f11 until the second end of the second metal-oxide-semiconductor 11 from second end of the 4th metal-oxide-semiconductor S1, to realize the programming to the 1st row 1 array storage unit.Similar, also can apply ground voltage GND to second end of the 4th metal-oxide-semiconductor S1, when applying program voltage AVDD to the second end of the second metal-oxide-semiconductor 11, to realize the programming to the 1st row 1 array storage unit.
Optionally, what can also perform in following steps in programming process is one or more:
Step S124, makes the second metal-oxide-semiconductor in non-programmed storage unit be in cut-off state;
Step S125, makes the sense amplifier be connected with described storage unit to be programmed be in disabled state;
Step S126, makes the first metal-oxide-semiconductor be connected with described storage unit to be programmed be in cut-off state;
Step S127, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be programmed or the 3rd metal-oxide-semiconductor be in cut-off state;
Step S128, makes the sense amplifier be not connected with described storage unit to be programmed be in disabled state.
Storer shown in corresponding diagram 3, the present invention also provides a kind of irredundant read method of storer, described irredundant read method comprises: step S2, the sense amplifier making the fuse in the second metal-oxide-semiconductor in storage unit to be read, described storage unit to be read and be connected with described storage unit to be read forms path, to read the data of described storage unit to be read.
Fuse in the second metal-oxide-semiconductor in described storage unit to be read, described storage unit to be read and the sense amplifier be connected with described storage unit to be read form path and refer to: the second metal-oxide-semiconductor in storage unit to be read, the fuse in storage unit to be read and the sense amplifier be connected with described storage unit to be read form the path that can be used for electric current to flow through.
Concrete, step S2 can comprise:
Step S21, makes the second metal-oxide-semiconductor in described storage unit to be read be in conducting state;
Step S22, makes the sense amplifier be connected with described storage unit to be read be in enabled status.
The conducting state of the second metal-oxide-semiconductor can realize by applying Kopin voltage " 1 " to its grid, can realize the realization of the enabled status of sense amplifier by applying enable signal to it.
When reading the data of described storage unit to be read, the supply voltage of described storer or ground voltage the second end to the 3rd metal-oxide-semiconductor be connected with described storage unit to be read can be applied.
As shown in Figure 7, suppose that the storage unit that the 1st row 1 arranges is storage unit to be read, then the sense amplifier be connected with storage unit to be read is the sense amplifier SA1 be connected with the 1st row 1 array storage unit.When the second metal-oxide-semiconductor 11 second end treated in reading cells applies ground voltage GND, the sense amplifier SA1 being in enabled status can send to detect electric current and export according to its voltage detected and characterize the signal that described storage unit to be read preserves data.Similar, as shown in Figure 8, also the second metal-oxide-semiconductor 11 second end can treated in reading cells applies the supply voltage VDD of described storer, and the sense amplifier SA1 being in enabled status can receive to detect electric current and export according to its voltage detected and characterize the signal that storage unit to be read preserves data.The specific works principle of the above-mentioned sense amplifier mentioned is well known to those skilled in the art, and repeats no more herein.
When reading the data of described storage unit to be read, the second metal-oxide-semiconductor in non-reading cells can be made to be in cut-off state.Described non-reading cells refers to: except the storage unit except described storage unit to be read.
Optionally, when reading the data of described storage unit to be read, what perform in following steps is one or more:
Step S23, makes the first metal-oxide-semiconductor of being connected with described storage unit to be read or the 3rd metal-oxide-semiconductor be in cut-off state;
Step S24, makes the sense amplifier be not connected with described storage unit to be read be in disabled state;
Step S25, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be read or the 3rd metal-oxide-semiconductor be in cut-off state.
Storer shown in corresponding diagram 4, can still adopt above-mentioned irredundant read method to read data in unit to be read, namely utilizes the sense amplifier be connected with unit to be read and unit to be read to form the path of irredundant reading.In reading process, the 4th metal-oxide-semiconductor be connected with described unit to be read can be made to be in cut-off state.Except utilizing the 4th metal-oxide-semiconductor and storage unit to be programmed to be formed for except the path of programming, the 4th metal-oxide-semiconductor can be in cut-off state in the programming of other modes or reading process.
During for data to be programmed " 1 " are programmed to storage unit, the programmed method that the present embodiment provides can be performed to storage unit, but, if in programming process, the current duration or the size of current foot that flow through fuse in this storage unit are large not, and fuse would not be fused.For the situation that fuse after programming fuses not yet, program fail can be referred to as.In order to detect storage unit whether program fail, irredundant reading can be carried out after storage unit programming.When the storage unit do not fused to fuse carries out irredundant reading, the data that sense amplifier reads can be " 0 ", and for the situation of fuse failure, the data that sense amplifier reads can be " 1 ".When the data read are different from data to be programmed, prove this storage unit program fail.
In order to solve the problem that program fail causes, the embodiment of the present invention provides a kind of method of operating of storer, comprising:
Step S3, is set to the p row redundant storage unit corresponding with p array storage unit by p+1 array storage unit, N-1 >=p >=1, and described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit;
Step S4, by data programing to be programmed corresponding for described p array storage unit to described p row redundant storage unit.
Described step S3 and S4 can perform during described p array storage unit program fail in the data to be programmed corresponding according to described p array storage unit.Make successively the 1st row p arrange to the capable p of M arrange storage unit and the sense amplifier be connected with described p array storage unit, the 3rd metal-oxide-semiconductor form path to read the data of described p array storage unit, judge described p array storage unit program fail when the data to be programmed that the data of described reading are corresponding from described p array storage unit are different.When the to be programmed data corresponding according to described p array storage unit are programmed successfully to described p array storage unit, by data programing to be programmed corresponding for described p+1 array storage unit to described p+1 array storage unit.To the detection of storage unit whether program fail, can carry out after the programming of permutation storage unit, also can carry out after each storage unit programming.
Suppose that storer comprises the storage unit arranging arrangement in 6 row 2, the data to be programmed that the 1st array storage unit is corresponding are " 101010 ", and the data to be programmed that the 2nd array storage unit is corresponding are " 111100 ".According to the programmed method that the present embodiment provides, data to be programmed " 101010 " are programmed to the 1st array storage unit.
After programming terminates, the irredundant read method provided according to the present embodiment reads the 1st array storage unit, if the data read are " 001010 ", the to be programmed data " 101010 " corresponding from the 1st array storage unit are different, then judge the 1st array storage unit program fail.After the 1st array storage unit program fail being detected, 2nd array storage unit is set to the 1st row redundant storage unit corresponding with the 1st array storage unit, and according to the programmed method that the present embodiment provides, data to be programmed corresponding for the 1st array storage unit are programmed to the 1st row redundant storage unit for " 101010 ", be programmed to former 2nd array storage unit by data to be programmed " 101010 ".Because former 2nd array storage unit has been set to the 1st row redundant storage unit, so, former 3rd array storage unit becomes the 2nd array storage unit, when programming to the 2nd array storage unit, still data to be programmed " 111100 " corresponding for the 2nd array storage unit is programmed to the 2nd array storage unit.If according to data to be programmed " 111100 " to the 2nd array storage unit program fail, then the 3rd array storage unit can be set to the 2nd row redundant storage unit, continue data to be programmed " 111100 " to be programmed to the 2nd row redundant storage unit.As can be seen from said process, if there is the situation of program fail, the row connected in two array storage units of same first metal-oxide-semiconductor become redundant storage unit, and belonging to remaining storage unit, row change.
But, after terminating the 1st array storage unit programming, the irredundant read method provided according to the present embodiment reads the 1st array storage unit, if the data read are " 101010 ", the to be programmed data " 101010 " corresponding with the 1st array storage unit are identical, then the 1st array storage unit is programmed successfully.Detect that the 1st array storage unit is programmed successfully, data to be programmed " 111100 " corresponding for the 2nd array storage unit are programmed to the 2nd array storage unit by the programmed method continuing to provide according to the present embodiment.
In the method for operating of the present embodiment, storage unit to be programmed and the 3rd metal-oxide-semiconductor data programing to the mode of storage unit both can have been utilized to form the method for path, also storage unit to be programmed and the 4th metal-oxide-semiconductor can be utilized to form the method for path, do not add restriction herein.
The situation of redundant storage unit is set for there is program fail, the embodiment of the present invention provides a kind of redundancy read method, comprise: step S5, make the fuse of the redundant storage unit to be read in p row redundant storage unit, the fuse of the storage unit to be read in the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p row redundant storage unit and the first metal-oxide-semiconductor be connected with described p array storage unit and the 3rd metal-oxide-semiconductor form path, to read data, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit.Described p row redundant storage unit is arranged when described p array storage unit program fail.
The fuse of the redundant storage unit to be read in described p row redundant storage unit, the fuse of the storage unit to be read in the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p row redundant storage unit and the first metal-oxide-semiconductor be connected with described p array storage unit and the 3rd metal-oxide-semiconductor form path and refer to: the fuse of the redundant storage unit to be read in described p row redundant storage unit, the fuse of the storage unit to be read in the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p row redundant storage unit and the first metal-oxide-semiconductor be connected with described p array storage unit and the 3rd metal-oxide-semiconductor form path and form the path that can be used for electric current to flow through.
Described step S5 comprises:
Step S51, makes the first metal-oxide-semiconductor of being connected with described p array storage unit and the 3rd metal-oxide-semiconductor be in conducting state;
Step S52, makes the sense amplifier be connected with described p row redundant storage unit be in enabled status.
The conducting state of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and cut-off state and the enabled status of sense amplifier identical with the implementation method realizing above-described embodiment of disabled state, repeat no more herein.
As shown in Figure 9, after supposing the program fail to the 1st array storage unit, 2nd array storage unit is set to the 1st row redundant storage unit corresponding with the 1st array storage unit, and by data programing to be programmed corresponding for the 1st array storage unit to the 1st row redundant storage unit.
When adopting redundancy read method to read data, apply high level voltage " 1 " to the 3rd metal-oxide-semiconductor B1 be connected with the 1st row 1 array storage unit and the first metal-oxide-semiconductor W11, apply enable signal to the sense amplifier SA2 be connected with the 1st row 1 row redundant storage unit.Ground voltage GND is applied to second end of the 3rd metal-oxide-semiconductor B1, sense amplifier SA2 output detections electric current, described electric current flows through fuse f12, the first metal-oxide-semiconductor W11 in the 1st row 1 row redundant storage unit and the fuse f11 in the 1st row 1 array storage unit until second end of the 3rd metal-oxide-semiconductor B1, and sense amplifier SA2 reads data according to the second terminal voltage value detecting electric current and fuse f12.Any one in fuse f11 and fuse f12 is fused, the data that sense amplifier SA2 obtains are data " 1 ", so, during by data programing to be programmed to the 1st array storage unit and the 1st row redundant storage unit, as long as once programme successfully, redundancy read method just can be adopted to obtain correct reading data.
Such as, storer comprises the storage unit arranging arrangement in 6 row 2, and the data to be programmed that the 1st array storage unit is corresponding are " 101010 ", and the data to be programmed that the 2nd array storage unit is corresponding are " 111100 ".
According to the programmed method that the present embodiment provides, data to be programmed " 101010 " are programmed to the 1st array storage unit, programming terminates the irredundant read method of rear employing and reads the 1st array storage unit, the data read are " 001010 ", the to be programmed data " 101010 " corresponding from the 1st array storage unit are different, then the 1st array storage unit program fail.
After the program fail of the 1st array storage unit being detected, 2nd array storage unit is set to the 1st row redundant storage unit corresponding with the 1st array storage unit, and according to the programmed method that the present embodiment provides, data to be programmed corresponding for the 1st array storage unit is programmed to the 1st row redundant storage unit for " 101010 ".
Suppose the programming success to the 1st row redundant storage unit, when then adopting redundancy read method to read data to the 1st row 1 array storage unit and the 1st row 1 row redundant storage unit, fuse because the fuse in the 1st row 1 array storage unit does not fuse in the 1st row 1 row redundant storage unit is fused, so, the reading data that sense amplifier SA2 obtains are still data " 1 ", significantly improve the yield of storer like this.
When performing redundancy read method, also can apply second end of supply voltage VDD to the 3rd metal-oxide-semiconductor be connected with described p array storage unit of storer.
When adopting redundancy read method to read data, the second metal-oxide-semiconductor in p array storage unit to be read or p row redundant storage unit can also be made to be in cut-off state.When adopting redundancy approach to read data, what also perform in following steps is one or more:
Step 53, makes the 3rd metal-oxide-semiconductor be connected with described p row redundant storage unit be in cut-off state;
Step 54, makes the sense amplifier be connected with described p array storage unit be in disabled state;
Step 55, make the second metal-oxide-semiconductor in non-reading cells be in cut-off state, described non-reading cells refers to: except the storage unit except redundant storage unit to be read and the storage unit corresponding with described redundant storage unit to be read;
Step 56, makes the sense amplifier be not connected with described p row redundant storage unit or p array storage unit be in disabled state;
Step 57, makes the first metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state;
Step 58, makes the 3rd metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state.
A upper embodiment utilizes the sense amplifier be connected with p row redundant storage unit to read data, in fact also can utilize and read data with the sense amplifier be connected with p array storage unit, so the present embodiment also provides a kind of redundancy read method of storer, comprise: step S6, make the fuse of the redundant storage unit to be read in p row redundant storage unit, the fuse of the storage unit to be read in the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p array storage unit and the first metal-oxide-semiconductor be connected with described p row redundant storage unit and the 3rd metal-oxide-semiconductor form path, to read data, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit.Described p row redundant storage unit is arranged when described p array storage unit program fail.
As shown in Figure 10, apply high level voltage " 1 " to the 3rd metal-oxide-semiconductor B2 be connected with described 1st row 1 row redundant storage unit and the first metal-oxide-semiconductor W11, apply second end of ground voltage GND to the 3rd metal-oxide-semiconductor B2, apply enable signal and can send detection electric current to read data to the sense amplifier SA1 be connected with the 1st row 1 array storage unit, sense amplifier SA1.Certainly, second end of supply voltage VDD to the 3rd metal-oxide-semiconductor B2 can also be applied.Utilize sense amplifier SA1 read the method for data and a upper embodiment utilize sense amplifier SA2 to read the implementation method of data and principle similar, repeat no more herein.When utilizing sense amplifier SA1 to read data, this can perform the one or more of following steps:
Step S61, makes the 3rd metal-oxide-semiconductor be connected with described p array storage unit be in cut-off state;
Step S62, makes the sense amplifier be connected with described p row redundant storage unit be in disabled state;
Step S63, makes the second metal-oxide-semiconductor in described p array storage unit or p row redundant storage unit be in cut-off state;
Step S64, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
Step S65, makes the sense amplifier be not connected with described p row redundant storage unit or p array storage unit be in disabled state;
Step S66, makes the first metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state;
Step S67, makes the 3rd metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state
As storer comprises the 4th metal-oxide-semiconductor, then in irredundant reading process, described 4th metal-oxide-semiconductor can be in cut-off state.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (31)
1. a storer, is characterized in that, comprising: the storage unit of the capable N row arrangement in M and at least one first metal-oxide-semiconductor, M >=1, N >=2, and N is even number, and described storage unit comprises: the second metal-oxide-semiconductor and fuse;
In same storage unit, the first end of the second metal-oxide-semiconductor connects the first end of fuse;
The second end being arranged in the fuse of same array storage unit links together;
The first end of the n-th the first metal-oxide-semiconductors connects the first end being arranged in the fuse of 2n-1 storage unit, and the second end connection of described the n-th the first metal-oxide-semiconductors is arranged in the first end of the fuse of 2n storage unit, n >=1.
2. storer as claimed in claim 1, is characterized in that, also comprise: N number of 3rd metal-oxide-semiconductor and N number of sense amplifier;
The input end that the first end of jth the 3rd metal-oxide-semiconductor connects a jth sense amplifier and the second end of fuse being arranged in jth array storage unit, N >=j >=1.
3. storer as claimed in claim 2, is characterized in that, also comprise: N number of 4th metal-oxide-semiconductor;
The first end of kth the 4th metal-oxide-semiconductor connects the second end being arranged in the fuse of kth array storage unit, N >=k >=1.
4. storer as claimed in claim 1, is characterized in that, also comprise: N number of 4th metal-oxide-semiconductor;
The first end of kth the 4th metal-oxide-semiconductor connects the second end being arranged in the fuse of a kth storage unit, N >=k >=1.
5. a programmed method for storer described in claim 2, is characterized in that, comprising:
The 3rd metal-oxide-semiconductor making the fuse in the second metal-oxide-semiconductor in storage unit to be programmed, described storage unit to be programmed and be connected with described storage unit to be programmed forms path, with by data programing to described storage unit to be programmed.
6. the programmed method of storer as claimed in claim 5, is characterized in that, also comprise:
Apply the second end of the second metal-oxide-semiconductor in the first voltage to described storage unit to be programmed;
Apply second end of the second voltage to the 3rd metal-oxide-semiconductor be connected with described storage unit to be programmed, the magnitude of voltage of described first voltage and the second voltage is unequal.
7. the programmed method of storer as claimed in claim 5, it is characterized in that, further comprising the steps of a is at least one in step e:
A, makes the sense amplifier be connected with described storage unit to be programmed be in disabled state;
B, makes the first metal-oxide-semiconductor be connected with described storage unit to be programmed be in cut-off state;
C, makes the second metal-oxide-semiconductor in non-programmed storage unit be in cut-off state;
D, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be programmed or the 3rd metal-oxide-semiconductor be in cut-off state;
E, makes the sense amplifier be not connected with described storage unit to be programmed be in disabled state.
8. a programmed method for storer according to claim 3, is characterized in that, comprising:
The 4th metal-oxide-semiconductor making the fuse in the second metal-oxide-semiconductor in storage unit to be programmed, described storage unit to be programmed and be connected with described storage unit to be programmed forms path, with by data programing to described storage unit to be programmed.
9. the programmed method of storer as claimed in claim 8, is characterized in that, also comprise:
Apply the second end of the second metal-oxide-semiconductor in the first voltage to described storage unit to be programmed;
Apply second end of the second voltage to the 4th metal-oxide-semiconductor be connected with described storage unit to be programmed, the magnitude of voltage of described first voltage and the second voltage is unequal.
10. the programmed method of storer as claimed in claim 8, it is characterized in that, further comprising the steps of a is at least one in steps d:
A, makes the first metal-oxide-semiconductor of being connected with described storage unit to be programmed or the 3rd metal-oxide-semiconductor be in cut-off state;
B, makes the sense amplifier be connected with described storage unit to be programmed be in disabled state;
C, makes the second metal-oxide-semiconductor in non-programmed storage unit be in cut-off state;
D, makes the first metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor or the 4th metal-oxide-semiconductor be not connected with described storage unit to be programmed be in cut-off state.
The irredundant read method of storer described in 11. 1 kinds of claims 2, is characterized in that, comprising:
The sense amplifier making the fuse in the second metal-oxide-semiconductor in storage unit to be read, described storage unit to be read and be connected with described storage unit to be read forms path, to read the data of described storage unit to be read.
The irredundant read method of 12. storeies as claimed in claim 11, is characterized in that, also comprise:
Apply the second end of the second metal-oxide-semiconductor in the supply voltage of described storer or ground voltage to described storage unit to be read.
The irredundant read method of 13. storeies as claimed in claim 11, it is characterized in that, further comprising the steps of a is at least one in steps d:
A, makes the first metal-oxide-semiconductor of being connected with described storage unit to be read or the 3rd metal-oxide-semiconductor be in cut-off state;
B, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
C, makes the sense amplifier be not connected with described storage unit to be read be in disabled state;
D, makes the first metal-oxide-semiconductor of not being connected with described storage unit to be read or the 3rd metal-oxide-semiconductor be in cut-off state.
The method of operating of storer described in 14. 1 kinds of claims 2, is characterized in that, comprising:
P+1 array storage unit is set to the p row redundant storage unit corresponding with p array storage unit, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit;
By data programing to be programmed corresponding for described p array storage unit to described p row redundant storage unit.
The method of operating of 15. storeies as claimed in claim 14, it is characterized in that, described step p+1 array storage unit being set to the p row redundant storage unit corresponding with p array storage unit performs when meeting the following conditions:
According to data to be programmed corresponding to described p array storage unit to described p array storage unit program fail.
The method of operating of 16. storeies as claimed in claim 15, is characterized in that, also comprise:
When the to be programmed data corresponding according to described p array storage unit are programmed successfully to described p array storage unit, by data programing to be programmed corresponding for described p+1 array storage unit to described p+1 array storage unit.
The method of operating of 17. storeies as claimed in claim 16, it is characterized in that, the programmed method of the storer according to the arbitrary claim in described claim 5 to 7 is by data programing to be programmed corresponding for described p+1 array storage unit extremely described p+1 array storage unit.
The method of operating of 18. storeies as claimed in claim 14, it is characterized in that, the programmed method of the storer according to the arbitrary claim in described claim 5 to 7 is by data programing to be programmed corresponding for described p array storage unit extremely described p row redundant storage unit.
The method of operating of 19. 1 kinds of storeies according to claim 3, is characterized in that, comprising:
P+1 array storage unit is set to the p row redundant storage unit corresponding with p array storage unit, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit;
By data programing to be programmed corresponding for described p array storage unit to described p row redundant storage unit.
The method of operating of 20. storeies as claimed in claim 19, it is characterized in that, described step p+1 array storage unit being set to the p row redundant storage unit corresponding with p array storage unit performs when meeting the following conditions:
According to data to be programmed corresponding to described p array storage unit to described p array storage unit program fail.
The method of operating of 21. storeies as claimed in claim 20, is characterized in that, also comprise:
When the to be programmed data corresponding according to described p array storage unit are programmed successfully to described p array storage unit, by data programing to be programmed corresponding for described p+1 array storage unit to described p+1 array storage unit.
The method of operating of 22. storeies as claimed in claim 21, it is characterized in that, the programmed method of the storer according to the arbitrary claim in described claim 8 to 10 is by data programing to be programmed corresponding for described p+1 array storage unit extremely described p+1 array storage unit.
The method of operating of 23. storeies as claimed in claim 19, it is characterized in that, the programmed method of the storer according to the arbitrary claim in described claim 8 to 10 is by data programing to be programmed corresponding for described p array storage unit extremely described p row redundant storage unit.
The redundancy read method of storer described in 24. 1 kinds of Claims 2 or 3, is characterized in that, comprising:
The fuse of the storage unit to be read in the fuse of the redundant storage unit to be read in p row redundant storage unit, the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p row redundant storage unit and the first metal-oxide-semiconductor be connected with described p array storage unit and the 3rd metal-oxide-semiconductor is made to form path, to read data, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit.
The redundancy read method of 25. storeies as claimed in claim 24, it is characterized in that, described p row redundant storage unit is arranged when described p array storage unit program fail.
The redundancy read method of 26. storeies as claimed in claim 24, is characterized in that, also comprise:
Apply the supply voltage of described storer or ground voltage the second end to the 3rd metal-oxide-semiconductor be connected with described p array storage unit.
The redundancy read method of 27. storeies as claimed in claim 24, it is characterized in that, further comprising the steps of a is at least one in step g:
A, makes the 3rd metal-oxide-semiconductor be connected with described p row redundant storage unit be in cut-off state;
B, makes the sense amplifier be connected with described p array storage unit be in disabled state;
C, makes the second metal-oxide-semiconductor in described p array storage unit or p row redundant storage unit be in cut-off state;
D, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
E, makes the sense amplifier be not connected with described p row redundant storage unit or p array storage unit be in disabled state;
F, makes the first metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state;
G, makes the 3rd metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state.
The redundancy read method of storer described in 28. 1 kinds of Claims 2 or 3, is characterized in that, comprising:
The fuse of the storage unit to be read in the fuse of the redundant storage unit to be read in p row redundant storage unit, the p array storage unit corresponding with described p row redundant storage unit, the sense amplifier be connected with described p array storage unit and the first metal-oxide-semiconductor be connected with described p row redundant storage unit and the 3rd metal-oxide-semiconductor is made to form path, to read data, N-1 >=p >=1, described p array storage unit is connected same first metal-oxide-semiconductor with described p row redundant storage unit.
The redundancy read method of 29. storeies as claimed in claim 28, it is characterized in that, described p row redundant storage unit is arranged when described p array storage unit program fail.
The redundancy read method of 30. storeies as claimed in claim 28, is characterized in that, also comprise:
Apply the supply voltage of described storer or ground voltage the second end to the 3rd metal-oxide-semiconductor be connected with described p row redundant storage unit.
The redundancy read method of 31. storeies as claimed in claim 28, it is characterized in that, further comprising the steps of a is at least one in step g:
A, makes the 3rd metal-oxide-semiconductor be connected with described p array storage unit be in cut-off state;
B, makes the sense amplifier be connected with described p row redundant storage unit be in disabled state;
C, makes the second metal-oxide-semiconductor in described p array storage unit or p row redundant storage unit be in cut-off state;
D, makes the second metal-oxide-semiconductor in non-reading cells be in cut-off state;
E, makes the sense amplifier be not connected with described p row redundant storage unit or p array storage unit be in disabled state;
F, makes the first metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state;
G, makes the 3rd metal-oxide-semiconductor be not connected with described p row redundant storage unit or p array storage unit be in cut-off state.
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| US11327860B2 (en) * | 2020-02-11 | 2022-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and methods for programming and reading memory device |
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