CN105322437A - Distributed feedback semiconductor laser - Google Patents
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- CN105322437A CN105322437A CN201410382706.9A CN201410382706A CN105322437A CN 105322437 A CN105322437 A CN 105322437A CN 201410382706 A CN201410382706 A CN 201410382706A CN 105322437 A CN105322437 A CN 105322437A
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Abstract
The invention discloses a distributed feedback semiconductor laser. The laser is in a multi-layer composite structure, wherein the multi-layer composite structure sequentially comprises an N-type electrode, a substrate, a lower cladding layer, a lower separate confinement layer, a strain multi-quantum well active layer, an upper separate confinement layer, a buffer layer, a grating layer, an upper cladding layer and a P-type electrode; two oppositely arranged end surfaces of the laser are respectively coated with a high-reflective film layer and an anti-reflective film layer; and the Bragg wavelength of a grating of the grating layer and the gain peak wavelength of an active region are mismatched and are in a relative blue shift. According to the distributed feedback semiconductor laser, the dispersion power penalty caused by a parasitic chirp of a device when an optical signal output by the laser is transmitted in an optical fiber access network XG-PON or 10G-EPON can be effectively reduced.
Description
Technical field
The present invention relates to the communications field, in particular to a kind of distributed feedback semiconductor laser.
Background technology
At present, in various broadband access technology, EPON (PON) access technology has the advantages such as capacity is large, transmission range long, cost is lower, full-service support.In correlation technique, standardized EPON mainly comprises: asynchronous transfer mode passive optical network (APON), Ethernet passive optical network (EPON), Gigabit Passive Optical Network (GPON), 10G-EPON and XG-PON.10G-EPON and XG-PON is the Technology of Light Access Network that system bandwidth is upgraded to 10Gb/s after EPON and GPON.In the 10GPON standard formulated (XG-PON and 10GEPON), the optical source wavelength of the down link from central office side to user side is arranged between 1574-1580nm.Modulation rate is that the L-band directly modulated laser of 10Gb/s exists following defect as the light source device of down link: the standard single-mode fiber for Signal transmissions has larger effect of dispersion compared with 1550nm place in the wave-length coverage of 1574-1580nm.When light source has certain spectrum zooming, the light propagation velocity difference in a fiber of different wave length is larger, thus causes even more serious impulse waveform broadening, and then produces larger intersymbol interference, significantly limit the transmission range of signal thus.
At present, what generally adopt in the world is the light source device of Electroabsorption Modulated Laser (EML) as said system, and this device has low chirping characteristics, thus meets performance requirement in the 20Km transmission range that can require in PON system.But what this device adopted is external modulation structure, needs semiconductor laser and electroabsorption modulator (EAM) to carry out single-chip integration.Owing to realizing integrated complex process, thus the reliability of EML device and rate of finished products are also a difficult problem in the world always.The prior art that another kind of suppression is warbled connects narrow band filter after distributed feedback laser, i.e. chirp management laser (CML); Its " 1 " signal utilizing the edge filter demodulation effect of narrow band filter that distributed feedback laser is exported passes through, and " 0 " signal is by great filtering, thus adds signal extinction ratio, thus, reduces the impact of dispersion on transmission performance.But this technology needs to carry out temperature control to discrete laser and filter respectively, this body structure of assembly and the equal more complicated of peripheral control circuits.Further, the bandwidth of filter all requires extremely narrow usually, and what this considerably increased again laser output wavelength and filter passband aims at difficulty.
Summary of the invention
The invention provides a kind of distributed feedback semiconductor laser, at least to solve the distributed feedback semiconductor laser for L-band in correlation technique with low live width broadening factor, it has lower parasitic frequency and warbles when directly modulation.Thus, can effectively reduce when it transmits in XG-PON or 10G-EPON network to be warbled by parasitism the problem of the dispersion penalty caused.
According to an aspect of the present invention, a kind of distributed feedback semiconductor laser is provided.
Distributed feedback semiconductor laser according to the embodiment of the present invention comprises: laser is multi-layer compound structure, wherein, multi-layer compound structure is made up of N-type electrode, substrate, under-clad layer, lower limiting layer respectively, strained multiple-quantum-well active layer, upper limiting layer respectively, resilient coating, grating layer, top covering and P-type electrode successively, two end faces that laser relative is arranged are coated with high-reflecting film layer and anti-reflection rete respectively, grating Bragg wavelength and the active area gain peak wavelength off resonance also relative blue shift of grating layer.
Preferably, grating Bragg wavelength and active area gain peak wavelength off resonance relative blue shift comprise: grating Bragg wavelength is 1577 ± 3nm in L-band; The material that strained multiple-quantum-well active layer adopts is Al-Ga-In-As, and strained multiple-quantum-well active layer gain peak place wavelength is 1600 ± 5nm.
Preferably, the tensile strain of 0.1% to 0.3% is applied to quantum well applying 1.2% to 1.5% compressive strain in strain multiple quantum well active layer and to the active area potential barrier in strain multiple quantum well active layer.
Preferably, the material that substrate, under-clad layer, resilient coating and top covering adopt is indium phosphide.
Preferably, the material that lower limiting layer respectively and upper limiting layer respectively adopt is Al-Ga-In-As.
Preferably, the material that grating layer adopts is InGaAsP.
Preferably, the material that N-type electrode adopts is titanium, platinum, billon, and the material that P-type electrode adopts is gold, germanium, nickel alloy.
Preferably, the first end face in two end faces be oppositely arranged be coated with power reflectance be 90% high-reflecting film layer and two end faces being oppositely arranged in the second end face be coated with the anti-reflection rete that power reflectance is 10%.
Preferably, above-mentioned laser application is in XG-PON or 10G-EPON network center local side.
Pass through the embodiment of the present invention, employing laser is multi-layer compound structure, wherein, multi-layer compound structure is successively by N-type electrode, substrate, under-clad layer, lower limiting layer respectively, strained multiple-quantum-well active layer, upper limiting layer respectively, resilient coating, grating layer, top covering, P-type electrode forms, two end faces that laser relative is arranged are coated with high-reflecting film layer and anti-reflection rete respectively, grating Bragg wavelength and the active area gain peak wavelength off resonance also relative blue shift of grating layer, solve the distributed feedback semiconductor laser for L-band in correlation technique with low live width broadening factor, it has lower parasitic frequency and warbles when directly modulation.Thus, effectively can be reduced when it transmits in XG-PON or 10G-EPON network to be warbled by parasitism the problem of the dispersion penalty caused, and then can effectively reduce to be warbled the dispersion penalty caused by device parasitic when laser output optical signal transmits in XG-PON or 10G-EPON intelligent acess network.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the structural representation of semiconductor laser according to the preferred embodiment of the invention;
Fig. 2 is the normalized gain of laser active layer according to the preferred embodiment of the invention and the schematic diagram of live width broadening factor and wavelength relationship;
Fig. 3 be according to the preferred embodiment of the invention laser active layer quantum well compressive strain amount to the schematic diagram of gain bandwidth contributions;
Fig. 4 is the schematic diagram of laser forward direction output end face " power-current " curve according to the preferred embodiment of the invention;
Fig. 5 is the schematic diagram of the Output optical power spectrum of laser forward direction output end face according to the preferred embodiment of the invention;
The schematic diagram of Fig. 6 amplitude-response curve of the small signal modulation of laser forward direction output end face according to the preferred embodiment of the invention;
Fig. 7 is the schematic diagram adopting and do not adopt the laser chirp Property comparison reducing live width broadening factor technology according to the preferred embodiment of the invention;
Fig. 8 is according to the preferred embodiment of the invention to the transmission error rates of forward direction output signal after 20Km Optical Fiber Transmission and the schematic diagram of receiver received power relation that adopt and do not adopt laser.
Embodiment
Hereinafter also describe the present invention in detail with reference to accompanying drawing in conjunction with the embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
It should be noted that, in the semiconductor laser of the preferred embodiment of the present invention, the first end face of be oppositely arranged two end faces can be defined as end face dorsad, the second end face is defined as forward direction output end face.
Fig. 1 is the structural representation of the longitudinal mode semiconductor laser based on bandpass filtering structure according to the embodiment of the present invention.As shown in Figure 1, its transversary (x-y cross section) is ridge waveguide structure, be made up of the N-type electrode 1 be arranged in order from bottom to top, substrate 2, under-clad layer 3, lower limiting layer respectively 4, strained multiple-quantum-well active layer 5, upper limiting layer respectively 6, resilient coating 7, grating layer 8, top covering 9, P-type electrode 10, wherein, two end faces that laser relative is arranged are coated with high-reflecting film layer and anti-reflection rete respectively, grating Bragg wavelength and the active area gain peak wavelength off resonance also relative blue shift of grating layer.
High speed directly modulated laser is the Primary Component in optical fiber telecommunications system as light source, and it has extremely important application in optical fiber telecommunications system and high-rate information transmission system.Distributed feedback type semiconductor laser has compact conformation, low in energy consumption, cost is low and can the advantage such as directly modulation.But, the Electroabsorption Modulated Laser that what in current XG-PON and 10GEPON network, the light source of L-band mainly adopted is based on external modulation structure.Hinder the subject matter of directly modulation distributed feedback semiconductor laser application be the parasitic frequency that its directly modulation brings warble (also i.e. parasitic wavelength chirp) in a fiber transmission time can bring larger dispersion penalty.Adopt laser as shown in Figure 1, the short wavelength side of laser active district gain peak is utilized to have the feature of less live width broadening factor, make and the active area gain peak wavelength off resonance relative blue shift of the operation wavelength determined by grating, solve the distributed feedback semiconductor laser for L-band in correlation technique with low live width broadening factor thus, it has lower parasitic frequency and warbles when directly modulation.Thus, effectively can be reduced when it transmits in XG-PON or 10G-EPON network to be warbled by parasitism the problem of the dispersion penalty caused, thus at operating wave strong point laser, there is less live width broadening factor, the parasitism reached when reducing devices function is warbled, is reduced the dispersion penalty that brings when it transmits in a fiber.
In preferred implementation process, above-mentioned laser can be applied to XG-PON or 10G-EPON network center local side.
Preferably, grating Bragg wavelength and active area gain peak wavelength off resonance relative blue shift need to meet following two conditions simultaneously:
Condition one: grating Bragg wavelength is 1577 ± 3nm in L-band;
Condition two: the material that strained multiple-quantum-well active layer adopts is Al-Ga-In-As, strained multiple-quantum-well active layer gain peak place wavelength is 1600 ± 5nm.
Preferably, the tensile strain of 0.1% to 0.3% is applied to quantum well applying 1.2% to 1.5% compressive strain in strain multiple quantum well active layer and to the active area potential barrier in strain multiple quantum well active layer.
In preferred implementation process, the material that substrate 2, under-clad layer 3, resilient coating 7 and top covering 9 adopt is indium phosphide (InP).
In preferred implementation process, the material that lower limiting layer respectively 4 and upper limiting layer respectively 6 adopt is Al-Ga-In-As (AlGaInAs).
In preferred implementation process, the material that strained multiple-quantum-well active layer 5 adopts is Al-Ga-In-As (AlGaInAs).
In preferred implementation process, the material that grating layer 8 adopts is InGaAsP (InGaAsP).
In preferred implementation process, the material that N-type electrode 1 adopts is titanium, platinum, billon.
In preferred implementation process, the material that P-type electrode 10 adopts is gold, germanium, nickel alloy.
Preferably, longitudinal chamber length of above-mentioned laser is 250 μm, the first end face in two end faces be oppositely arranged be coated with power reflectance be 90% high-reflecting film layer and two end faces being oppositely arranged in the second end face be coated with the anti-reflection rete that power reflectance is 10%.
For the active area of strained multiple-quantum-well, the wave function in conduction band and E-k dispersion relation obtain analysis result by solving single Schrodinger equation, and the wave function of valence band and E-k dispersion relation can obtain numerical solution by separating coupling Schrodinger equation.Then the gain of TE and TM pattern in optical material is calculated by numerical integration.For the quantum well applying compressive strain, the gain of TE pattern is much larger than the gain of TM pattern, and therefore, hereafter mentioned material gain all refers to TE modal gain.The equation of change of Refractive Index of Material can be obtained by Kramers-Kronig conversion.Finally, the Refractive Index of Material change that the linewidth enhancement factor of material can be caused by the change calculating charge carrier finally obtains with the ratio of change in gain.
Fig. 2 is the normalized gain of laser active layer according to the preferred embodiment of the invention and the schematic diagram of live width broadening factor and wavelength relationship.As shown in Figure 2, be 1600nm by the peak wavelength of the active area gain calculated, and operation wavelength is 1577nm, namely there is the mismatching angle of 23nm to short wavelength side in operation wavelength and gain peak wavelength.On the other hand, can see that live width broadening factor reduces gradually along the short wavelength direction of gain peak, thus, the mismatching angle of this 23nm can make the live width broadening factor (order of magnitude) of operating wave strong point reduce about one times than the live width broadening factor at gain peak wavelength place.
Fig. 3 be according to the preferred embodiment of the invention laser active layer quantum well compressive strain amount to the schematic diagram of gain bandwidth contributions.As shown in Figure 3, to quantum well apply respectively 1% compressive strain and 1.5% compressive strain time, the graph of a relation that normalized gain and wavelength offset relative to gain peak wavelength.Gain spectral three dB bandwidth is defined as yield value and drops to scope corresponding to gain peak one half wavelength.Indicate in Fig. 3 be compressive strain be 1% time three dB bandwidth.Three dB bandwidth when compressive strain is 1.5% can be obtained by similar approach.As shown in Figure 3, the compressive strain increasing quantum well region contributes to the three dB bandwidth improving gain, thus make operation wavelength still can obtain enough large yield value to the left side of gain peak when also namely short wavelength direction offsets, also namely at operation wavelength 1577nm place, although itself and gain peak have the off resonance of 23nm, still higher gain can be had.
Fig. 4 is the schematic diagram of laser forward direction output end face " power-current " curve according to the preferred embodiment of the invention.As shown in Figure 4, the threshold current of laser, Slop efficiency are respectively 8mA, 5.3mW/mA.Fig. 5 is the schematic diagram of the Output optical power spectrum of laser forward direction output end face according to the preferred embodiment of the invention.As shown in Figure 5, " side mode suppression ratio " of laser is about 55dB." while touching rejection ratio " can be defined as the difference of power decibels (dB) value of power decibels (dB) value of the maximum pattern of Output optical power in the Output optical power spectrum pattern second largest with Output optical power, is the performance index of sign single mode laser characteristic.Threshold current is normally defined: make laser reach sharp and penetrate condition, start current input value when producing power output; Slop efficiency normally calculates under the prerequisite of given operating current, and it is defined as: at given operating current place, and " power-electric current " slope of a curve and power output change are in a small amount divided by input current change in a small amount.Operating current is usually taken at threshold current and adds 20mA place.Can be shown by above-mentioned Fig. 4 and Fig. 5, the chip performance of the laser that the embodiment of the present invention provides belongs to normal range (NR), thus, adopts the off resonance of operation wavelength and gain peak wavelength to design the larger deterioration not causing chip of laser performance.
Small signal approximation is usually used to the response characteristic of analyzing semiconductor laser, such as: the small signal modulation characteristic of laser.In dynamic state, carrier concentration and photon density all can be expressed as a steady-state value and a time dependent amount sum.When supposing that variable quantity is less relative to steady-state value, from the single mode rate equation of semiconductor laser, adopt the differential analysis method of small-signal analysis and rate equation can calculate the frequency range of Distributed Feedback Laser to modulation current response.The modulation bandwidth of the semiconductor laser of embodiment of the present invention major concern obtains by small-signal response, is normally defined frequency when modulated response drops to the 3dB of low frequency value or D. C. value.The schematic diagram of Fig. 6 amplitude-response curve of the small signal modulation of laser forward direction output end face according to the preferred embodiment of the invention.As shown in Figure 6, be when bias current is about 1.6 times of threshold currents, the amplitude-response curve of the small signal modulation of laser forward direction output end face.The small signal modulation of laser is about 15GHz.Thus, can meet speed is that the EPON of 10Gb/s is to the requirement of device modulation speed.
Fig. 7 is the schematic diagram adopting and do not adopt the laser chirp Property comparison reducing live width broadening factor technology according to the preferred embodiment of the invention.As shown in Figure 7, solid line represents the technical scheme adopting the embodiment of the present invention to provide, and dotted line represents the technical scheme not adopting the embodiment of the present invention to provide.In zero moment, operating current skips to electric current corresponding to " 1 " bit by the electric current that " 0 " bit is corresponding.After electric current generation " 0 " arrives the saltus step of " 1 ", the wavelength of laser offsets to short wavelength direction, this skew is called wavelength chirp, and the wavelength chirp can observing the laser that have employed the reduction live width broadening factor technology that the embodiment of the present invention provides obviously reduces.
Fig. 8 is according to the preferred embodiment of the invention to the transmission error rates of forward direction output signal after 20Km Optical Fiber Transmission and the schematic diagram of receiver received power relation that adopt and do not adopt laser.As shown in Figure 8, wherein also depict back-to-back transmission situation as comparing.Usually the optical signal pulses produced from light source can produce the broadening of pulse due to the dispersive influence of optical fiber, this broadening can cause the intersymbol interference of adjacent code element, the signal of each code element is owing to revealing the reduction that also can cause signal amplitude in code element to both sides simultaneously, thus causing the reduction of receiving end signal signal to noise ratio, it increases finally causing the error rate.Therefore, the power of input signal will increase the error rate maintaining system requirements.This power increasing amount is defined as dispersion penalty, and unit represents with dB usually.Thus, as can be seen from Figure 8, if with the error rate of 1E-5 for standard, the dispersion penalty of the laser not adopting the embodiment of the present invention to provide is about 2dB, and the dispersion penalty of the laser adopting the embodiment of the present invention to provide is reduced to about 1dB.
From above description, can find out, above embodiments enable following technique effect (it should be noted that these effects are effects that some preferred embodiment can reach): adopt the technical scheme that the embodiment of the present invention provides, provide a kind of L-band distributed feedback semiconductor laser of low live width broadening factor, its transversary and the structure shown in x-y cross section are ridge waveguide, from bottom to top by the N-type electrode be arranged in order, substrate, under-clad layer, lower limiting layer respectively, strained multiple-quantum-well active layer, upper limiting layer respectively, resilient coating, grating layer, top covering, P-type electrode forms.The Bragg wavelength of grating and active area gain peak wavelength off resonance relative blue shift in grating layer.Can be implemented in operation wavelength 1577nm place thus and there is lower live width broadening factor, thus can effectively reduce to be warbled the dispersion penalty caused by device parasitic when laser output optical signal transmits in XG-PON or 10G-EPON intelligent acess network.
Compared with prior art, the laser that the embodiment of the present invention provides has following advantage:
(1) its manufacturing process steps is consistent with the manufacturing process steps of mature common ridge waveguide bar shaped distributed feedback semiconductor laser, and cost of manufacture is low;
(2) its compact conformation, compared with EML, without the need to single-chip integration electro-absorption modulation district; Compared with CML, without the need to external filters, and peripheral temperature control circuit;
(3) directly modulation can be carried out;
(4) in operating wave strong point, gain material has less live width broadening factor, thus substantially reduces the parasitism that semiconductor laser produces when being from directly modulated and warble.
Obviously, those skilled in the art should be understood that, above-mentioned of the present invention each module or each step can realize with general calculation element, they can concentrate on single calculation element, or be distributed on network that multiple calculation element forms, alternatively, they can realize with the executable program code of calculation element, thus, they can be stored and be performed by calculation element in the storage device, and in some cases, step shown or described by can performing with the order be different from herein, or they are made into each integrated circuit modules respectively, or the multiple module in them or step are made into single integrated circuit module to realize.Like this, the present invention is not restricted to any specific hardware and software combination.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a distributed feedback semiconductor laser, it is characterized in that, comprise: described laser is multi-layer compound structure, wherein, described multi-layer compound structure is made up of N-type electrode, substrate, under-clad layer, lower limiting layer respectively, strained multiple-quantum-well active layer, upper limiting layer respectively, resilient coating, grating layer, top covering and P-type electrode successively, two end faces that described laser relative is arranged are coated with high-reflecting film layer and anti-reflection rete respectively, grating Bragg wavelength and the active area gain peak wavelength off resonance also relative blue shift of described grating layer.
2. laser according to claim 1, is characterized in that, described grating Bragg wavelength and the gain peak wavelength off resonance of described active area also relative blue shift comprise:
Described grating Bragg wavelength is 1577 ± 3nm in L-band;
The material that described strained multiple-quantum-well active layer adopts is Al-Ga-In-As, and described strained multiple-quantum-well active layer gain peak place wavelength is 1600 ± 5nm.
3. laser according to claim 1, it is characterized in that, apply the tensile strain of 0.1% to 0.3% to quantum well applying 1.2% to 1.5% compressive strain in described strained multiple-quantum-well active layer and to the active area potential barrier in described strained multiple-quantum-well active layer.
4. laser according to claim 1, is characterized in that, the material that described substrate, described under-clad layer, described resilient coating and described top covering adopt is indium phosphide.
5. laser according to claim 1, is characterized in that, the material that described lower limiting layer respectively and described upper limiting layer respectively adopt is Al-Ga-In-As.
6. laser according to claim 1, is characterized in that, the material that described grating layer adopts is InGaAsP.
7. laser according to claim 1, is characterized in that, the material that described N-type electrode adopts is titanium, platinum, billon, and the material that described P-type electrode adopts is gold, germanium, nickel alloy.
8. laser according to claim 3, it is characterized in that, the first end face in described two end faces be oppositely arranged be coated with high-reflecting film layer that power reflectance is 90% and described in the second end face in two end faces being oppositely arranged be coated with the anti-reflection rete that power reflectance is 10%.
9. laser according to any one of claim 1 to 8, is characterized in that, described laser application is in XG-PON or 10G-EPON network center local side.
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