CN105322064A - UV light emitting diode - Google Patents
UV light emitting diode Download PDFInfo
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- CN105322064A CN105322064A CN201510455286.7A CN201510455286A CN105322064A CN 105322064 A CN105322064 A CN 105322064A CN 201510455286 A CN201510455286 A CN 201510455286A CN 105322064 A CN105322064 A CN 105322064A
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- 230000004888 barrier function Effects 0.000 claims abstract description 92
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 17
- 239000002019 doping agent Substances 0.000 claims description 19
- 238000005315 distribution function Methods 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 17
- 238000010276 construction Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 402
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 21
- 239000000758 substrate Substances 0.000 description 19
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 238000007599 discharging Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
A UV light emitting diode having improved internal quantum efficiency is provided. The UV light emitting diode includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure. The active area of the multi-quantum well structure includes barrier layers and well layers which are alternately stacked. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers has a smaller thickness than of the well layers and at least one of the barrier layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer. So driving voltage of the UV light emitting diode is reduced, and the internal quantum efficiency is improved.
Description
This application claims priority that on July 29th, 2014 submits to, 10-2014-0096626 korean patent application and rights and interests, the document is to be incorporated herein in full with reference to mode.
Technical field
Exemplary embodiment relates to UV light-emitting diode.More specifically, exemplary embodiment relates to the UV light-emitting diode of the internal quantum with improvement.More specifically, exemplary embodiment relates to the UV light-emitting diode of electronics and hole-recombination efficiency in the active area with improvement.
Background technology
Usually, gallium nitride (GaN) base semiconductor is widely used in UV, blue/green light-emitting diode or laser diode, and these diodes use as light source in a lot of application (comprising full color display, traffic mark board, general lighting and optical communication equipment).This GaN base light-emitting diode comprises InGaN base active layer, and it has the multi-quantum pit structure between N-shaped GaN base semiconductor layer and p-type GaN base semiconductor layer.
Fig. 1 is the schematic cross sectional view of typical light-emitting diode, and Fig. 2 is the amplification profile of the active area of the light-emitting diode of Fig. 1.
See Fig. 1 and Fig. 2, light-emitting diode comprises substrate 11, three dimensional growth layer 13, n-contact layer 15, active area 17, P type contact layer 19, n-electrode 10 and p-electrode 20.In this typical light-emitting diode, the active area 17 with multi-quantum pit structure is located to improve luminous efficiency between n-contact layer 15 and P type contact layer 19, and can send by the In content of InGaN well layer in adjustment multi-quantum pit structure the light having and expect wavelength.
On the other hand, GaN has the band gap of about 3.42eV, and it corresponds to the energy that wavelength is about the light of 365nm.Therefore, consider the luminous efficiency giving the credit to difference in band gap between well layer and barrier layer, the blue light or the UV light that in well layer, use the light-emitting diode of GaN or InGaN to send wavelength be about 400nm or larger.The light-emitting diode that wavelength is the UV light of 400nm or less is sent in order to provide, the band gap on well layer and barrier layer must being increased, therefore using the well layer (see 10-2012-0129449A Korean Patent open file) formed by adding Al in GaN or InGaN.
Be in the active area of the light of 400nm or larger comprising the well layer that is made up of InGaN and sending wavelength, there is larger difference in the band gap between GaN or InGaN barrier layer and well layer, thus in well layer, provides high quantum efficiency.But in order to improve the quantum efficiency in active area, wherein said active area comprises having by increasing Al in GaN or InGaN and can send the well layer that wavelength is the band gap of 400nm or less light, and barrier layer must have higher band gap.
Refer again to Fig. 2, in the active area 17 of typical light-emitting diode, barrier layer 17b has the thickness larger than well layer 17w.This structure is designed to be maximized by the recombination rate in well layer 17w between hole and electronics improve luminous efficiency.Or rather, well layer overlies one another at least one pair of in an alternating fashion with barrier layer.When electronics and hole are injected into well layer and are restricted to wherein, each in electronics and hole all can not be regarded as single particle.That is, electronics in well layer is limited in and hole is present in quantum well structure at random according to its probability-distribution function.The probability-distribution function in electronics and hole can be represented by distribution curve according to there is probability according to uncertain principle.Correspondingly, although electronics and hole are injected into the well layer in active area, according to its probability-distribution function, electronics and hole are likely present in barrier layer.
In addition, be injected into electronics in each in the well layer adjacent with the barrier layer be folded in therebetween and hole also distributes according to its probability-distribution function, and there is the well layer that electronics and hole migration directly inject to adjacent well layer and electronics and hole may.In adjacent well layer, the probability-distribution function in electronics and hole can overlap each other at random, and the thickness on barrier layer is thinner causes the degree of overlapping in adjacent well layer between electronics and the probability-distribution function in hole higher.The phenomenon that the electronics comprised in this adjacent well layer and the probability-distribution function in hole overlap each other is referred to as the overlap of probability-distribution function.
The degree of overlapping of probability-distribution function is higher mean electronics and hole migration higher to the possibility in adjacent well layer, therefore the possibility of electronics and hole-recombination reduces, thus reduces internal quantum.Therefore, in order to improve internal quantum, barrier layer must have enough thickness or high band gap with block electrons and/or hole migration in adjacent well layer.
In the related, barrier layer is formed to have specific thicknesses with block electrons and hole migration in adjacent well layer.That is, the thickness on barrier layer is set as the thickness being more than or equal to and the electronics of the well layer adjacent with barrier layer and the probability-distribution function in hole are not overlapped to each other.The barrier layer thickness that the electronics of the well layer adjacent with barrier layer and the probability-distribution function in hole are not overlapped to each other can be referred to as the skin depth (skindepth) on barrier layer.Along with the difference in band gap between well layer and barrier layer becomes large and the increase of well layer thickness, the skin depth on barrier layer diminishes.Such as, in the active area with following structure, wherein in described structure GaN barrier layer be formed at In containing 15% and thickness be 2nm-3nm InGaN well layer on be about light between 440nm to send wavelength at about 460nm-, because when the conduction band energy difference between well layer and barrier layer is 370meV, barrier layer has the skin depth of about 5nm, therefore well layer can have the thickness of about 10nm-15nm.
Therefore, in the related, the thickness due to barrier layer must be more than or equal to the skin depth on barrier layer, and therefore barrier layer 17b has thicker thickness.Correspondingly, electronics and hole migration are served as to the barrier in each well layer 17w process in barrier layer.Therefore, the driving voltage of light-emitting diode increases, and electronics and hole are injected in well layer unevenly, thus cause the deterioration of internal quantum.
Therefore, need to develop a kind of light-emitting diode, it comprises the active area that wherein barrier layer has thicker degree and higher band gap.
Summary of the invention
Exemplary embodiment of the present invention provides a kind of light-emitting diode, and it has higher band gap and moves to equably in each well layer to allow electronics and hole, thus improves internal quantum.
Exemplary embodiment of the present invention provides a kind of UV light-emitting diode, and wherein barrier layer does not hinder electronics and hole to be injected in well layer, thus makes it possible to work under lower driving voltage.
Exemplary embodiment of the present invention provides a kind of UV light-emitting diode, and wherein the thickness on barrier layer is less than well layer, prevents in barrier layer simultaneously, and the electronics of well layer and the probability-distribution function in hole overlap each other.
Exemplary embodiment of the present invention provides a kind of UV light-emitting diode, and wherein barrier layer thickness compared with well layer is thinner and band gap is higher, thus prevents from injecting the electronics of each well layer and hole is diffused into adjacent well layer.
Exemplary embodiment of the present invention provides a kind of UV light-emitting diode, and wherein barrier layer has the thickness thinner than well layer, and can solve electronics and the hole migration suitable composition to the problem in adjacent well layer.
According to an aspect of the present invention, UV light-emitting diode can comprise: the n-contact layer comprising AlGaN layer or AlInGaN layer; Comprise the P type contact layer of AlGaN layer or AlInGaN layer; And there is the active area of the multi-quantum pit structure be placed between n-contact layer and P type contact layer, the active area wherein with multi-quantum pit structure comprises the well layer and barrier layer that overlie one another in an alternating fashion, and well layer comprises the electronics and hole that exist according to its probability-distribution function.Herein, barrier layer is formed by AlInGaN or AlGaN and Al content is 10%-30%; At least one being placed in the barrier layer between well layer has the thickness less than one of well layer; Be placed in the thickness of at least one of the barrier layer between well layer and band gap prevents from being injected into the well layer adjacent with barrier layer and the electronics be limited to wherein and hole are diffused into another adjacent well layer.
Barrier layer can have the Al content of 10%-30% and the In content of 0-5%, and well layer can have and is less than the Al content of 1% and the In content of 0-10%.At least one being placed in the barrier layer between well layer has the thickness less than one of well layer.
The thickness of at least one in barrier layer can for 50% of the thickness of one of well layer be to being less than 100%.
The thickness of at least one in barrier layer can be 2nm-3nm, and the thickness of one of well layer can be greater than 3nm-4nm.
In addition, in the middle of barrier layer, two barrier layers adjacent with P type contact layer with n-contact layer can have the thickness larger than well layer.By this structure, the migration in electronics and hole can be carried out easily in the active area with multi-quantum pit structure, and the disengaging electronics of active area and the quantity in hole can reduce.
In addition, light-emitting diode may further include at least one Electronic Control layer, and it is placed between n-contact layer and active area.Herein, Electronic Control layer can be formed by AlInGaN or AlGaN, and can comprise the Al larger than adjacent layer quantity.
In certain embodiments, P type contact layer can comprise bottom high-concentration dopant layer, top high-concentration dopant layer, and is placed in the low concentration doped layer between bottom high-concentration dopant layer and top high-concentration dopant layer.
The thickness of low concentration doped layer can be greater than bottom and top high-concentration dopant layer.
In addition, n-contact layer can comprise bottom gallium nitride (GaN) layer, top aluminium gallium nitride alloy (AlGaN) layer, and is placed in the intermediate layer of the sandwich construction between bottom GaN layer and top AlGaN layer.
The intermediate layer with sandwich construction can have the structure formed by alternately stacking AlGaN layer and GaN layer.
Light-emitting diode may further include the superlattice layer be placed between n-contact layer and active area; And the electron injecting layer be placed between superlattice layer and active area, wherein electron injecting layer can have the N-shaped impurity doping concentration higher than superlattice layer.
Superlattice layer can have the structure formed by an alternately stacking AlInGaN layer and the 2nd AlInGaN layer.
Electron injecting layer can be formed by AlGaN.
Light-emitting diode may further include the unadulterated AlGaN layer be placed between n-contact layer and superlattice layer.
Light-emitting diode may further include low concentration AlGaN layer, and it to be placed between unadulterated AlGaN layer and superlattice layer and with the doped in concentrations profiled N-shaped impurity lower than n-contact layer; And high concentration AlGaN layer, it is placed between low concentration AlGaN layer and superlattice layer, and with the doped in concentrations profiled N-shaped impurity higher than low concentration AlGaN layer.
N-contact layer can comprise the AlGaN layer of modulation doping.
In certain embodiments, the active area of multi-quantum pit structure can send the UV light of its wavelength between 360-405nm.
The embodiment provides a kind of UV light-emitting diode, wherein the barrier layer band gap with the thickness thinner than well layer and Geng Gao is to prevent from being injected in well layer and the electronics be limited in well layer and hole are diffused in adjacent well layer by it, thus reduce the driving voltage of UV light-emitting diode, improve internal quantum simultaneously.
Accompanying drawing explanation
Illustrate the exemplary embodiment of concept of the present invention, and together play with this specification the effect explaining the principle of the invention, wherein said accompanying drawing is used to provide the further understanding to concept of the present invention, and combines in this manual and the part become wherein.
Fig. 1 is the schematic cross sectional view of typical light-emitting diode.
Fig. 2 is the amplification profile of the active area of the light-emitting diode of Fig. 1.
Fig. 3 is the profile of the UV light-emitting diode according to one exemplary embodiment of the present invention.
Fig. 4 is the profile of the multi-quantum pit structure of UV light-emitting diode according to an exemplary embodiment of the present invention.
Fig. 5 is the profile comprising the UV light-emitting diode of electrode according to one exemplary embodiment of the present invention.
Fig. 6 is typical UV light-emitting diode and transmission electron microscope (TEM) microphoto according to the multi-quantum pit structure of the UV light-emitting diode of one exemplary embodiment of the present invention.
Fig. 7 describes by typical UV light-emitting diode and the curve chart of the intensity of light that sends of UV light-emitting diode according to an exemplary embodiment of the present invention.
Embodiment
Hereinafter, exemplary embodiment of the present invention is described with reference to the accompanying drawings in detail.Following exemplary embodiment provides by way of example intactly spirit of the present invention is conveyed to those skilled in the art.Correspondingly, the invention is not restricted to the embodiment disclosed herein, can also realize in different forms.In the accompanying drawings, element width, length, thickness etc. can for clear and be convenient to describe object and exaggerated.When element or layer are referred to as on " being placed in " or " being located at " another element or layer, it can be directly on " being placed in " or " being located at " another element or layer, or can there is intermediary element.In whole specification, similar reference number instruction has the like of same or similar function.On the other hand, in this article, the content of the metallic element (Al or In) represented by percentage be in gallium nitride based layer this metallic element compared to the ratio of component of all metallic elements in units of percentage.That is, Al is used
xin
yga
zthe Al content of the gallium nitride based layer that N represents can calculate according to 100 × x/ (x+y+z), and represents with %.
Fig. 3 is the profile of the UV light-emitting diode according to one exemplary embodiment of the present invention; Fig. 4 is the profile of the multi-quantum pit structure of UV light-emitting diode according to an exemplary embodiment of the present invention.
See Fig. 3, UV light-emitting diode comprises n-contact layer 27, active area 39 and P type contact layer 43 according to an exemplary embodiment of the present invention.In addition, this UV light-emitting diode can comprise substrate 21, resilient coating 23, three dimensional growth layer 25, electron injecting layer 37, electronic barrier layer 41 or delta doping layer 45.
Substrate 21 is the substrate for growing gallium nitride based semiconductor thereon, and can be any substrate, such as Sapphire Substrate, SiC substrate, spinel substrate etc.Such as, substrate 21 can be patterned Sapphire Substrate (PSS).
Resilient coating 23 can be formed by (Al, Ga) N (such as GaN or AlGaN) under the low temperature of 400 DEG C-600 DEG C, so that growing three-dimensional grown layer 25 on substrate 21.It is thick that resilient coating 23 can be formed as about 25nm.Three dimensional growth layer 25 to alleviate the generation of dislocation defects etc., and to grow between substrate 21 and n-contact layer 27 at the relatively high temperature of 700 DEG C-900 DEG C.Three dimensional growth layer 25 can be formed to 1 μm-2 μm by such as unadulterated GaN.
N-contact layer 27 can be formed as the gallium nitride-based semiconductor doped with N-shaped impurity (such as Si), and can be formed as such as about 1 μm to about 3 μm thick.The AlGaN that this n-contact layer 27 can be 2%-10% (higher than its adjacent layer) by Al content is formed, and can be formed with the form of single or multiple lift, and wherein thickness is that the AlGaN layer of 5nm-30nm or AlInGaN layer are formed as intermediate layer.Such as, as shown in the figure, n-contact layer 27 can comprise bottom AlGaN layer 27a, intermediate layer 27b and top AlGaN layer 27c.Herein, intermediate layer 27b can be formed by AlInN or AlN, and can be formed with the form of sandwich construction (comprising superlattice structure), and in described sandwich construction, AlInN or AlGaN and GaN is stacked into such as 4-10 couple in an alternating fashion.Bottom AlGaN layer 27a can have the thickness of about 1.5 μm, and top AlGaN layer 27c can have the thickness of about 1 μm.Top AlGaN layer 27c can have the Al content being less than 10%, such as about 2%-about 9%.On the other hand, bottom AlGaN layer can have the Al content lower than top AlGaN layer.
Intermediate layer 27b can have the thickness less than top AlGaN layer 27c, and can be formed as about 80nm gross thickness.Intermediate layer 27b is formed on the AlGaN layer 27a of bottom, and top AlGaN layer 27c is formed on the 27b of intermediate layer, thus improves the crystallinity of top AlGaN layer 27c.This intermediate layer suppresses the cracking caused by the lattice mismatch between n-contact layer 27 and three dimensional growth layer 25.
Specifically, bottom AlGaN layer 27a and top AlGaN layer 27c is with 1E18/cm
3or higher high-concentration dopant Si impurity.Intermediate layer 27b can adulterate with the concentration identical or higher with top AlGaN layer 27c.Such as, intermediate layer 27b can with 1E18/cm
3or higher high-concentration dopant Si impurity.In addition, top AlGaN layer 27c can comprise the modulate-doped layer formed by repeated dopant and undoped.Intermediate layer and modulate-doped layer enhance the level dispersion of electronics.The n-electrode (49a in Fig. 7) of contact n-contact layer 27 can contact top AlGaN layer 27c.Specifically, manufacturing in the process of vertical-type light-emitting diode by removing substrate 21, by laser beam irradiation is removed substrate 21 to three dimensional growth layer 25 (laser lift-off), support substrates can be formed in the upside of P type contact layer, and bottom AlGaN layer 27a and intermediate layer 27b can remove by utilizing KOH or NaOH solvent to carry out wet etching.
Electronic Control layer 28 has the Al content higher than n-contact layer 27 and flow to active area 39 to hinder electronics from n-contact layer 27.Because the mobility of electronics exceeds 10-100 doubly than the mobility in hole, therefore the recombination rate in electronics and hole can be improved by the migration velocity in electronics and hole in the mobility balance active area 39 of the mobility and hole that control electronics.
Anti-electrostatic discharging layer 30 is formed to realize capacitor arrangement alleviate electrostatic discharge shock by inserting undoped layer in doped layer.Anti-electrostatic discharging layer 30 can comprise unadulterated AlGaN layer 29, low concentration AlGaN layer 31 and high concentration AlGaN layer 33.Unadulterated AlGaN layer 29 can be formed by unadulterated AlGaN, and can have the thickness less than top AlGaN27C, such as 80nm-300nm.Because unadulterated AlGaN layer 29 has the resistance coefficient higher than n-contact layer 27, therefore unadulterated AlGaN layer 29 forms electric capacity between n-contact layer 27 and high concentration AlGaN layer 33.By this structure, the impact that the reverse voltage that the electrostatic that anti-electrostatic discharging layer is generated by outside by alleviation is formed causes prevents from forming destruction to active layer.Low concentration AlGaN layer 31 plays by the resistance reducing related electronic injection by undoped layer 29 effect regulating operating voltage.
Low concentration AlGaN layer 31 is positioned in undoped algan layer 29, and has the N-shaped impurity doping concentration lower than n-contact layer 27.The Si doping content of low concentration AlGaN layer 31 can such as 5 × 10
17/ cm
3-5 × 10
18/ cm
3scope in, and the thickness less than undoped algan layer 29 can be formed, such as 50nm-120nm.On the other hand, high concentration AlGaN layer 33 is positioned in low concentration AlGaN layer 31, and the doping content of its N-shaped impurity is higher than low concentration AlGaN layer 31.High concentration AlGaN layer 33 can have the Si doping content substantially identical with n-contact layer 27.High concentration AlGaN layer 33 can have the thickness less than low concentration AlGaN layer, and such as about 20nm-is about 40nm.
N-contact layer 27, Electronic Control layer 28, unadulterated AlGaN layer 29, low concentration AlGaN layer 31 and high concentration AlGaN layer 33 can by growing to growth chamber accommodating metal source gas continuously.Raw material for metal source gas can comprise the organic material of Al, Ga and In, such as TMAl, TMGa, TEGa and/or TMIn.SiH
4the source gas of Si can be used as.These layers can grow in the first temperature (such as 1050 DEG C-1150 DEG C).
Electronic Control layer 34 is positioned on anti-electrostatic discharging layer 30.Particularly, Electronic Control layer 34 adjoins high concentration AlGaN layer 33.Electronic Control layer 34 has the Al content higher than anti-electrostatic discharging layer 30, and can be formed by AlGaN or AlInGaN.Such as, Electronic Control layer 34 can have the Al content of 10%-30% and the In content of 0%-5%.Electronic Control layer 34 can have the thickness of about 1nm-10nm.
Electronic Control layer 34 has the Al content higher than anti-electrostatic discharging layer 30, to hinder electronics to flow to active layer 39 from n-contact layer 27.By this structure, Electronic Control layer 34 strengthens the recombination rate in electronics and hole in active layer 39 by controlling electron mobility.
Superlattice layer 35 is positioned on Electronic Control layer 34.Can by by having an AlInGaN layer of different component and the 2nd AlInGaN layer, alternately stacking formation about 30 is right, each making in the first and second AlInGaN layers has such as
thickness, form this superlattice layer 35.One AlInGaN layer and the 2nd AlInGaN layer have the band gap higher than the well layer 39w (Fig. 2) in active area 39.One AlInGaN layer and the 2nd AlInGaN layer have the In content lower than well layer 39w.But, be to be understood that and the present invention is not limited thereto.That is, at least one in an AlInGaN layer and the 2nd AlInGaN layer can have the In content higher than well layer 39w.Such as, one in an AlInGaN layer and the 2nd AlInGaN layer can have higher than another AlInGaN layer about 1% In content, and the Al content of about 8% can be had.Superlattice layer 35 can be formed as non-doped layer.When superlattice layer 35 is non-doped layer, the leakage of current of light-emitting diode can be reduced.
Because superlattice layer 35 has the mean value of the total lattice parameter corresponding with the median of the well layer of active area, therefore superlattice layer 35 can play the effect of lattice mismatch relief layer about active area formed thereon, thus improves internal quantum by the piezoelectric effect reduced because of the lattice mismatch formation between active area and other layers.
The doping content of the N-shaped impurity of electron injecting layer 37 is higher than superlattice layer 35.In addition, electron injecting layer 37 can have N-shaped impurity concentration identical or higher compared with n-contact layer 27.Such as, electron injecting layer 37 can have 2 × 10
18/ cm
3-2 × 10
19/ cm
3, preferably 1 × 10
19/ cm
3-2 × 10
19/ cm
3n-shaped impurity doping concentration.Electron injecting layer 37 can have the thickness similar or less with high concentration AlGaN layer 33.Such as, electron injecting layer 37 can have the thickness that about 20nm-is about 100nm.Electron injecting layer 37 can be formed by such as AlInGaN, and can have the In content of 0-5% to improve electron mobility.
Active area 39 can be positioned on electron injecting layer 37.Fig. 4 is the amplification profile of active area 39.
See Fig. 4, active area 39 has multi-quantum pit structure, and described structure comprises the barrier layer 39b and well layer 39w that overlie one another in an alternating manner.Well layer 39w can have the component that can send 400nm or the more UV light of small wavelength.Such as, well layer 39w can be formed by GaN, InGaN or AlInGaN.When well layer 39w is formed by InGaN, the In content of well layer can be determined according to the wavelength of the UV light expected.Such as, well layer 39w can have about 5% or less In content.Each in well layer 39w can have the thickness that about 3nm-is about 4nm.Electronics and hole can be injected in each in well layer.So when the electronics be injected in well layer and hole are restricted to wherein, each in electronics and hole all can not be regarded as single particle.That is, electronics in well layer is limited to and hole is present in quantum well structure at random according to probability-distribution function.
Barrier layer 39b can be formed by the gallium nitride-based semiconductor that band gap is higher than well layer, such as AlGaN or AlInGaN, and can use Al
xin
yga
1-x-yn (0≤x≤1,0≤y≤1) represents.Specifically, barrier layer 39b can have 1% or less In content to alleviate the lattice mismatch between well layer 39w and barrier layer 39b, prevent the crystalline deterioration in barrier layer by improving Al content simultaneously.On the other hand, barrier layer can have the In content lower than well layer.In this embodiment, barrier layer 39b can be formed by AlGaN or AlInGaN.Now, barrier layer 39b can have the Al content of 10%-30%.In addition, each in the 39b of barrier layer can have the thickness of 2nm-3nm.In addition, the thickness of each in the 39b of barrier layer can for 50% of the thickness of each in well layer 39w be to being less than 100%.Thickness and the Al content of barrier layer 39b are inversely proportional to.That is, when barrier layer has the Al content of 30%, even thickness is that the barrier layer 39b of 2nm also can prevent the probability-distribution function in the electronics in the well layer adjacent with barrier layer 39b and hole from overlapping each other.
In addition, at least one in the 39b of barrier layer can have the thickness different from other barrier layers, and in the middle of this plurality of barrier layer 39b, a barrier layer can have the Al content higher than another barrier layer and less thickness.That is, barrier layer 39b can have different thickness and different band gap.
Barrier layer 39b can have the Al content of 10%-30%, therefore has the band gap higher than well layer 39w.Therefore, according to this exemplary embodiment, although barrier layer 39b has the thickness less than well layer 39w, but still the barrier layer skin depth that is enough to prevent the probability-distribution function of adjacent well layer 39w from overlapping each other can be guaranteed.Therefore, UV light-emitting diode can improve internal quantum according to an exemplary embodiment of the present invention, reduces driving voltage simultaneously.
Refer again to Fig. 3, P type contact layer 43 can be placed on active layer 39, and electronic barrier layer 41 can be placed between active layer 39 and P type contact layer 43.Can by mode repeatedly stacking for layer be formed electronic barrier layer 41 by AlGaN or AlInGaN.When electronic barrier layer 41 is formed by AlInGaN between active area 39 and P type contact layer 43, the lattice mismatch between active area 39 and P type contact layer 43 can be alleviated further.Now, electronic barrier layer 41 can have the Al content of such as about 40%.Electronic barrier layer 41 can doped p type impurity (such as Mg), or can be formed as non-doped layer.Electronic barrier layer 41 can have the thickness of about 15nm.
P type contact layer 43 can be formed by the AlGaN layer of doped with Mg or AlInGaN layer.Such as, P type contact layer 43 can have the Al content of about 8% and the thickness of 50nm-100nm.P type contact layer 43 can be made up of single layer, but is not limited thereto.As shown in the figure, P type contact layer 43 can comprise bottom high-concentration dopant layer 43a, low concentration doped layer (intermediate doped layer) 43b and top high-concentration dopant layer 43c.Low concentration doped layer 43b has than bottom and the lower doping content of top high-concentration dopant layer 43a, 43c, and between bottom high-concentration dopant layer 43a and top high-concentration dopant layer 43c.Low concentration doped layer 43b can grow by stopping supply Mg source gas (such as Cp2Mg).In addition, in the growth course of low concentration doped layer 43b, except H2 gas, N2 gas can be utilized as carrier gas to reduce Mg content.In addition, low concentration doped layer 43b can be formed as having than bottom and the larger thickness of top high-concentration dopant layer 43a, 43c.Such as, it is thick that low concentration doped layer 43b can be formed as about 60nm, and it is thick that each in bottom and top high-concentration dopant layer 43a, 43c can be formed as about 10nm.By this structure, can by improving the crystallinity of P type contact layer 43, reduce its impurity concentration to prevent simultaneously or alleviate the loss of the UV light caused because of P type contact layer 43.
On the other hand, delta doping layer 45 can be placed in P type contact layer 43 to reduce ohmic contact resistance.Delta doping layer 45 can Doped n-type or p-type impurity in high concentration, to reduce the Ohmic resistance between electrode formed thereon and P type contact layer 43.Delta doping layer 45 can have about
thickness.
Fig. 5 is the profile comprising the UV light-emitting diode of electrode according to one exemplary embodiment of the present invention.Fig. 5 shows the lateral type light-emitting diode formed by growing patterned epitaxial loayer on substrate 21.
See Fig. 5, except with reference to Fig. 3 describe epitaxial loayer and substrate 21 except, this light-emitting diode also comprises transparency electrode 47, n-electrode 49a and p-electrode 49b.
Transparency electrode 47 can be formed by such as tin indium oxide (ITO).P-electrode 49b is placed in transparency electrode 47.The exposed region of the n-contact layer 27 that n-electrode 49b contact is formed by etching epitaxial loayer.Particularly, n-electrode 49a contacts the upper surface of top AlGaN layer 27c.Electronic Control layer 28 is placed in n-contact layer 27, and n-electrode 49a contacts described contact layer 27 and hinders electronics to flow to active layer 39 from n-contact layer 27.
Although this embodiment is described with reference to lateral type light-emitting diode, is to be understood that and the present invention is not limited thereto.Flip chip type light-emitting diode can be manufactured by growing patterned epitaxial loayer on substrate 21, or vertical-type light-emitting diode can manufacture by removing substrate 21.
Fig. 6 illustrates typical UV light-emitting diode and transmission electron microscope (TEM) microphoto according to the multi-quantum pit structure of the UV light-emitting diode of one exemplary embodiment of the present invention.Fig. 6 (a) is the TEM microphoto of the multi-quantum pit structure of typical light-emitting diode in correlation technique, and Fig. 6 (b) is the TEM microphoto of the multi-quantum pit structure of UV light-emitting diode according to an exemplary embodiment of the present invention.
See Fig. 6, in the multi-quantum pit structure of the typical light-emitting diode of correlation technique, well layer 17w has the thickness of about 3.2nm, and barrier layer 17b has the thickness of about 4.9nm.On the contrary, in the multi-quantum pit structure of UV light-emitting diode according to an exemplary embodiment of the present invention, well layer 39w has the thickness of about 3.7nm, and barrier layer 39b has the thickness of about 2.9nm.
Fig. 7 describes by typical UV light-emitting diode and the curve chart of the intensity of light that sends of UV light-emitting diode according to an exemplary embodiment of the present invention.In the figure 7, line a represents the intensity of the light sent by typical UV light-emitting diode, and line b represents the intensity of the light sent by UV light-emitting diode according to an exemplary embodiment of the present invention.
See Fig. 7, can see, when applying identical drive current to the UV light-emitting diode with identical chips structure, the intensity of the light sent according to the UV light-emitting diode of exemplary embodiment is higher than being sent by typical UV light-emitting diode.Suppose these two kinds of UV light-emitting diodes because identical chip structure has identical light extraction efficiency, then can confirm that there is according to the UV light-emitting diode of exemplary embodiment the internal quantum of improvement.
Although the present invention is described with reference to some embodiments by reference to the accompanying drawings, it will be apparent to one skilled in the art that and can carry out various correction, change and replacement when not deviating from the spirit and scope of the present invention to the present invention.Therefore, should be appreciated that these embodiments and accompanying drawing should not be construed as limiting the present invention, but be suggested to as those skilled in the art provide complete understanding of the present invention.Scope of the present invention should become cover from claims according to the claim interpretation submitted to below and be equal to all corrections or change that obtain.
Claims (12)
1. a ultraviolet light-emitting diodes, it comprises:
Comprise the n-contact layer of AlGaN layer or AlInGaN layer;
Comprise the P type contact layer of AlGaN layer or AlInGaN layer; And
There is the active area of the multi-quantum pit structure be placed between n-contact layer and P type contact layer, the active area with multi-quantum pit structure comprises the well layer and barrier layer that overlie one another in an alternating fashion, well layer comprises the electronics and hole that exist according to its probability-distribution function
Wherein, barrier layer is formed by AlInGaN or AlGaN and Al content is 10%-30%;
At least one being placed in the barrier layer between well layer has the thickness less than one of well layer; And
Be placed in the thickness of at least one of the barrier layer between well layer and band gap prevents from being injected into the well layer adjacent with barrier layer and the electronics limited wherein and hole are diffused into another adjacent well layer.
2. ultraviolet light-emitting diodes as claimed in claim 1, wherein, the thickness of at least one in the barrier layer between well layer is 50% of the thickness of one of well layer to being less than 100%.
3. ultraviolet light-emitting diodes as claimed in claim 1, wherein, the thickness of at least one in barrier layer is 2nm-3nm, and the thickness of one of well layer is greater than 3nm-4nm.
4. ultraviolet light-emitting diodes as claimed in claim 1, wherein, well layer has 5% or less In content, and barrier layer has 1% or less In content, and the In content on barrier layer is less than the In content of well layer.
5. ultraviolet light-emitting diodes as claimed in claim 1, wherein, well layer has about 5% or less Al content, and barrier layer has the Al content of 10%-30%, and in active area, the thickness on barrier layer and its Al content are inversely proportional to.
6. ultraviolet light-emitting diodes as claimed in claim 1, it also comprises:
At least one Electronic Control layer, is placed between n-contact layer and active area;
Electronic Control layer is formed by AlInGaN or AlGaN, and has the Al content higher than adjacent layer.
7. ultraviolet light-emitting diodes as claimed in claim 1, wherein, the low concentration doped layer that P type contact layer comprises bottom high-concentration dopant layer, top high-concentration dopant layer and is placed between bottom high-concentration dopant layer and top high-concentration dopant layer.
8. ultraviolet light-emitting diodes as claimed in claim 1, wherein, n-contact layer comprises bottom GaN layer, top AlGaN layer and is placed in the intermediate layer of the sandwich construction between bottom GaN layer and top AlGaN layer.
9. ultraviolet light-emitting diodes as claimed in claim 8, wherein, the intermediate layer of sandwich construction has the structure by alternately stacking AlGaN layer and GaN layer formation.
10. ultraviolet light-emitting diodes as claimed in claim 1, it also comprises:
Be placed in the superlattice layer between n-contact layer and active area; And
Be placed in the electron injecting layer between superlattice layer and active area,
Electron injecting layer has the N-shaped impurity doping concentration higher than superlattice layer.
11. ultraviolet light-emitting diodes as claimed in claim 10, it also comprises:
Be placed in the unadulterated AlGaN layer between n-contact layer and superlattice layer;
Low concentration AlGaN layer, to be placed between unadulterated AlGaN layer and superlattice layer and with the doped in concentrations profiled N-shaped impurity lower than n-contact layer; And
High concentration AlGaN layer, is placed between low concentration AlGaN layer and superlattice layer, and with the doped in concentrations profiled N-shaped impurity higher than low concentration AlGaN layer.
12. ultraviolet light-emitting diodes as claimed in claim 1, wherein, n-contact layer comprises the AlGaN layer of modulation doping.
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