CN105316756B - Optimize the method for process recipe in pulsively electrochemical polishing technique - Google Patents
Optimize the method for process recipe in pulsively electrochemical polishing technique Download PDFInfo
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- CN105316756B CN105316756B CN201410365997.0A CN201410365997A CN105316756B CN 105316756 B CN105316756 B CN 105316756B CN 201410365997 A CN201410365997 A CN 201410365997A CN 105316756 B CN105316756 B CN 105316756B
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Abstract
The invention proposes a kind of methods for optimizing process recipe in pulsively electrochemical polishing technique, comprising: step 1: obtaining the distributed intelligence being worth before wafer thickness, and imports an original process recipe；Step 2: calculating and generate the corresponding relationship of speed of related movement at different wafer radius, which has been corrected；Step 3: calculating and generate the corresponding relationship that current duty cycle is distributed at any point on wafer, which has been corrected；Step 4: generating a new process recipe and replace original process recipe, include the corresponding relationship of the corresponding relationship for the speed of related movement being corrected and the current duty cycle being corrected distribution in the new process recipe.The present invention considers the speed of related movement and the big factor of current duty cycle two of spray head simultaneously, is controlled the removal rate of polishing.
Description
Technical field
The present invention relates to semiconducter process, more specifically to optimizing in a kind of pulsively electrochemical polishing technique
The method of process recipe.
Background technique
The semiconductor processing industry of 21 century has welcome new opportunity to develop, more along with becoming better and approaching perfection day by day for processing technology
Sample and novel manufacturing process also emerges one after another.The integrated circuit that three-dimensional based on silicon wafer through hole (TSV) technology stacks
Encapsulation technology (3D IC Package) is one of current newest encapsulation technology, has size and quality small, parasitism is effectively reduced
Effect, the advantages that improving chip speed and reduce power consumption.And the correlation of electrochemical polish would generally be involved using TSV technology
Processing means.
It is each in order to reach control wafer as accurately as possible when the prior art polishes wafer using electrochemical process
The purpose of the polishing removal rate at place, it is often constant relative to the horizontal direction speed of related movement of wafer using polishing fluid spray head,
Directly using the corresponding relationship in spray head between the duty ratio and removal rate of control electric current, by setting and changing current duty cycle
Value directly control removal rate.Regrettably, although this method generally achieves good results, there are one
Serious defect.When the defect utilizes current duty cycle practical control removal rate, although the duty ratio 20% to 90% is answered
With the linear relationship that can be obtained in range close to ideal value；But application range is when close to the regional location of 0% or 100%,
The linear relationship of current duty cycle and removal rate is poor, it is difficult to accurately control removal rate by duty ratio.
Summary of the invention
To solve the above-mentioned problems, the present invention provides the sides for optimizing process recipe in a kind of pulsively electrochemical polishing technique
Method, while considering speed of related movement and influence that two aspect factor of current duty cycle applies removal rate, and then realize
The technology vision that removal rate is accurately controlled.
In order to achieve the above object, technical solution provided by the invention is as follows:
A kind of method for optimizing process recipe in pulsively electrochemical polishing technique, passes through speed of related movement and electric current duty
Than come the removal rate that adjusts, control wafer, step includes:
Step 1: obtaining the distributed intelligence being worth before wafer thickness, and import an original process recipe；
Step 2: calculating and generate the corresponding relationship of speed of related movement at different wafer radius, which is repaired
Just；
Step 3: calculate and generate on wafer the corresponding relationship that current duty cycle is distributed at any point, the corresponding relationship by
Amendment；
Step 4: it generates a new process recipe and replaces original process recipe, it will in the new process recipe
Corresponding relationship comprising the corresponding relationship of speed of related movement being corrected and the current duty cycle being corrected distribution；
The speed of related movement is speed of related movement of the polishing fluid spray head relative to the horizontal direction of wafer, the electricity
Stream duty ratio is the current duty cycle that electric current is controlled in polishing fluid spray head.
Preferably, the distributed intelligence being worth before the wafer thickness, the new process recipe and relative motion speed
The corresponding relationship of corresponding relationship and the current duty cycle distribution of degree is further embodied by the form of figure or chart.
Further, the step 1 includes: to show that wafer is complete according to the processing mode that measurement, calculating or both combine
Office thickness distribution table T1, wafer overall situation thickness distribution table T1 give the corresponding wafer thickness in any coordinate position place on wafer
Angle value；And according to wafer overall situation thickness distribution table T1, the radial average thickness of wafer is calculated, and generate radial average thickness point
Cloth table T2；Wherein, the center of circle be wafer center O, radial average thickness=with point corresponding on the circle of Radius thickness summation/
With the sum of point corresponding on the circle of Radius.
Further, the step 1 includes: the standard speed of related movement table T3 for importing an existing formula, and is imported
One standard removal rate table T4 generated under conditions of standard speed of related movement table T3.
Further, the step 2 includes: according to radial average thickness distribution table T2, standard speed of related movement table T3
And standard removal rate table T4, it calculates and corrects the speed of related movement at radially any point, and generate revised opposite
Movement velocity table t1；Wherein, radially speed of related movement=original this standard speed of related movement * at any point after amendment
(the former removal rate/point corresponding thickness value in table T2).
It further, include: to import a current duty cycle and removal rate correction factor relation table T5 in the step 1,
Including at least in table T5 has a standard duty ratio, and there are a correction factor standards corresponding to specific standard duty ratio
Value.
It further, include: according to wafer overall situation thickness distribution table T1 and radial average thickness distribution table in the step 3
The corresponding mean value correction factor of each point on the circle of the global any radius of wafer is calculated in T2, and generates on the circle of different radii
The corresponding mean value correction factor distribution table T6 of each point；And according to current duty cycle and removal rate correction factor relation table T5, no
It is corresponding to calculate each coordinate position point on wafer by the corresponding mean value correction factor distribution table T6 with each point on the circle of radius
Actual duty cycle, and generate global duty cycle distribution table t2；Wherein, the center of circle is the center O of wafer, the reality of any point on wafer
The radius average thickness of circle where the correction factor=point thickness/point, actual duty cycle=standard of any point on wafer
Duty ratio * actual correction coefficient/correction factor standard value.
Preferably, in the global duty cycle distribution table t2: if the value that the actual duty cycle of certain point is calculated is greater than
1, which will be taken as 1；If the value of the actual duty cycle of certain point is calculated less than 0, which will be taken as 0.
Preferably, the step 4 further comprises: it generates a new process recipe and replaces original formula, it is described new
Process recipe in will include speed of related movement table t1 and global duty cycle distribution table t2, and table t1 and table t2 have been corrected.
Invention thinking provided by the invention only need to provide an original process recipe, while consider speed of related movement
Amendment is made in influence with current duty cycle to removal rate on the basis of original formula, can be obtained one it is new, improvement
Process recipe, it is more accurate to the control of removal rate.
Detailed description of the invention
Fig. 1 is the simplified schematic diagram of the burnishing device involved in the present invention arrived；
Fig. 2 is duty ratio and removal rate mapping table in a kind of pulsively electrochemical polishing technique of the prior art；
Fig. 3 is the schematic diagram of some points that is related in the principle of method of the invention；
Fig. 4 is the flow diagram of a specific embodiment of method of the invention；
Fig. 5 is the standard speed of related movement table T3 that a specific embodiment of method of the invention imports；
Fig. 6 is that a specific embodiment of method of the invention generates under the conditions of standard speed of related movement table T3
Standard removal rate table T4；
Fig. 7 is the revised speed of related movement table t1 of a specific embodiment of method of the invention；
Fig. 8 is that a specific embodiment of method of the invention produces under the conditions of revised speed of related movement table t1
Raw revised removal rate table t3；
Fig. 9 is the wafer overall situation thickness distribution table T1 of a specific embodiment of method of the invention；
Figure 10 is the current duty cycle and correction factor relation table T5 of a specific embodiment of method of the invention；
Figure 11 is the global duty cycle distribution table t2 of a specific embodiment of method of the invention.
Specific embodiment
It, below will be to this in order to help those skilled in the art to more fully understand technical solution documented by the invention patent
The attached drawing of invention, which is made, to be further explained and the technical solution of the in conjunction with the embodiments more deep elaboration invention: Fig. 1 is this
The simplified schematic diagram of the involved burnishing device of invention.The principal organ of the device includes shaft 1, fixture 2, power supply 5, and
Spray head 6.Wafer 3 is clamped by fixture 2, the jet polishing liquid 4 during the polishing process of spray head 6.Power supply 5 is the pulse power, generated
Certain duty ratio will be present in electric current, and the duty ratio is adjustable.Of course, fixture 2 and spray head 6 are not fixed, two
Relative motion can occur in the horizontal direction for person.Additionally, fixture 2 will also drive 3 high speed rotation of wafer during the polishing process,
To realize global polishing.Without limitation, the size of wafer 3 used in us is: radius 150mm.
Fig. 2 is the regular table that those skilled in the art sum up, and reflects current duty cycle and removal rate
Corresponding relationship.The horizontal axis of the table represents the value of current duty cycle, and the longitudinal axis represents the value of removal rate, it can be seen that with electric current
The increase of duty ratio, removal rate is totally in raising trend, and application range, in 20% to 90% section, removal rate is almost
Be proportional to current duty cycle, but 0 to 20% and 90% to 100% section on, linear relationship is then very unsatisfactory.Existing skill
In art, common is exactly to directly control the variation of removal rate by adjusting current duty cycle using the table, non-in linear relationship
Often ideally, this method is highly effective, but in the case where linear relationship is bad, and this method is not just very accurate.
Principle based on method of the invention is mainly: the process time of any point removal rate and the point is at just on wafer
Than being inversely proportional with the horizontal relative motions speed of the point, so wafer can be controlled by adjusting horizontal direction speed of related movement
The radially removal rate (i.e. the removal rate of each point on any radial direction of wafer) of each point；Additionally, usual wafer half in office
Each point on the circle of diameter, the difference of residual thickness is smaller after polishing between each point, and corresponding horizontal relative velocity can on same circle
To be considered identical, it can be considered that the current duty cycle of each point is able to maintain ideal linear relationship (i.e. on same circle
Section of the application range of current duty cycle 20% to 90%), and then can be by current duty cycle to any radius of wafer
Circle on the removal rate of each point controlled.
Fig. 3 illustrates the partial dot being related in the principle of the invention.O is the center of wafer, A, B be located at on Radius and
It is radial by the direction of A to B.Using OA as the circle of radius, radius r, using OB as the circle of radius, radius R；And A, B points
It Wei Yu not be on two different circles of radius.A, it is the center of circle, r on the same circle of radius that a, which is located at using O,；B, it is circle that b, which is located at O,
The heart, R are on the same circle of radius.The general thought of the inventive method is that, by the relative motion speed for changing spray head 6
In other words degree is equivalent to the removal of each point on the different circle of Control Radius to adjust the radial removal rate of similar A to B
Rate；And for the removal rate of each point on same circle, the speed of related movement due to can consider them is almost the same, and removal rate
It is ideal with the linear relationship of current duty cycle, so can be each on same circle to directly control by changing current duty cycle
The removal rate of point.It so integrates, the final global removal rate that we obtain will we very close expection.
Fig. 4 is then the flow diagram of a specific embodiment of the invention.Its specific steps includes:
1. being worth before importing wafer thickness, value can be as obtained by measuring device measurement before wafer thickness, and thickness needs are
Wafer overall situation thickness；
2. being worth before the wafer thickness imported according to 1, according to interpolation calculation method, wafer overall situation thickness distribution table T1 is calculated, it should
Wafer thickness and coordinate correspond in table；
3. calculating the radial average film thickness of wafer according to 2 obtained global thickness distribution table T1, then generate radial flat
Equal thickness distribution table T2, film thickness and radius correspond in the table；
The corresponding film thickness summation put of radial average film thickness=same radial location/with the sum of point corresponding to Radius；
4. importing the standard speed of related movement table T3 of an existing formula；
5. importing removal rate table T4 corresponding to standard speed of related movement table T3；
6. according to the wafer radial direction draw thickness distribution table T2 in 3, the standard speed of related movement table of the existing formula in 4
Standard removal rate table T4 corresponding to standard speed of related movement table T3 in T3 and 5 calculates radially arbitrary point phase after amendment
To movement velocity, and generate speed of related movement table t1 after amendment；
Radially arbitrary point speed of related movement=original this standard movement speed after amendment × (the former removal rate/it should
The radial average film thickness distribution table of point)；
7. importing current duty cycle and removal rate correction factor relation table T5, which contains a standard duty ratio, Ke Yigen
According to experience, duty ratio standard value, such as the corresponding correction factor standard value 1.0 of duty ratio 75% are set；
8. being calculated according to the radial average film thickness distribution table T2 in the wafer overall situation thickness distribution table T1 and 3 in 2
With the correction factor on Radius where global arbitrary point is corresponding, and generate the corresponding mean value amendment of each point on the circle of different radii
Coefficient distribution table T6；
Actual correction coefficient=radius where any dot thickness/point；
9. being distributed according to the mean value correction factor in the current duty cycle and removal rate correction factor relation table T5 and 8 in 7
Table T6 calculates actual duty cycle value corresponding to each point, and generates global duty cycle distribution table t2, i.e., the arbitrary point in the table
Current duty cycle value and its coordinate correspond；If calculated dutyfactor value is greater than 1 or less than 0, because without practical object
Meaning is managed, so being all calculated as being 1 or 0；
Actual duty cycle value=standard dutyfactor value × actual correction coefficient/correction factor standard value；
10. being directed respectively into according to the global duty cycle distribution table t2 in speed of related movement table t1 and 9 after the amendment in 6
Original formula replaces original speed of related movement table and global duty cycle distribution table, generates a new formula.
Fig. 5 gives a standard relative motion Speedometer Drive T3.This table shows institute is right at different radii position on wafer
The value of the speed of related movement for the spray head answered.Wherein, the horizontal axis of the table is the radius length of certain point position on wafer, the longitudinal axis
For horizontal relative motions speed.Standard relative motion Speedometer Drive T3, Fig. 6 corresponding to Fig. 5 give corresponding standard removal rate
Table T4.Standard removal rate table T4 such as Fig. 6 of generation is polished under the conditions of T3.
Fig. 7 is to be computed revised speed of related movement table t1.It is corresponding to have Fig. 8, i.e., wafer is polished by t1
The revised removal rate table t3 generated.
Fig. 9 is a wafer overall situation thickness distribution table T1.The table reflects the thickness of wafer overall situation each point, by measuring and inserting
Value method is calculated.The point of more parts below omit and indicated by the table, and not only has recorded 11 points.
Figure 10 is a current duty cycle and correction factor relation table T5.Including at least in the table has a standard duty
Than, and accordingly there are one the standard values of correction factor.The table can immediately arrive at certain by inquiring this table obtained by experience
Corresponding correction factor standard value under one standard duty ratio.
Figure 11 is a revised global duty cycle distribution table t2.
Conclusively, revised speed of related movement table t1 and revised global duty will be included in new process recipe
Than distribution table t2.The new process recipe will be used for computer program to control polishing process.
In the above description, more concrete details is given so as to provide a more thorough understanding of the present invention.So
And it will be apparent to one skilled in the art that the present invention may not need one or more of these details and be able to
Implement.Therefore, modifications and variations without departing from the spirit and scope of the present invention should be also included within permission of the invention.
Claims (9)
1. optimizing the method for process recipe in a kind of pulsively electrochemical polishing technique, which is characterized in that pass through speed of related movement
The removal rate of wafer is adjusted, controlled with current duty cycle, and step includes:
Step 1: obtaining the distributed intelligence being worth before wafer thickness, and import an original process recipe；
Step 2: calculating and generate the corresponding relationship of speed of related movement at different wafer radius, which has been corrected；
Step 3: calculating and generate the corresponding relationship that current duty cycle is distributed at any point on wafer, which is repaired
Just；
Step 4: generating a new process recipe and replace original process recipe, include in the new process recipe
The corresponding relationship for the speed of related movement being corrected and the corresponding relationship of the current duty cycle being corrected distribution；
The speed of related movement is speed of related movement of the polishing fluid spray head relative to the horizontal direction of wafer, and the electric current accounts for
Sky is than being the current duty cycle for controlling electric current in polishing fluid spray head.
2. the method according to claim 1, wherein the distributed intelligence being worth before the wafer thickness, described new
The corresponding relationship of the corresponding relationship and current duty cycle of process recipe and the speed of related movement distribution is further by scheming
Or the form of chart embodies.
3. the method according to claim 1, wherein the step 1 further comprises:
Show that wafer overall situation thickness distribution table T1, the wafer are global thick according to the processing mode that measurement, calculating or both combine
Degree distribution table T1 gives the corresponding wafer thickness value in any coordinate position place on wafer；And
According to the wafer overall situation thickness distribution table T1, the radial average thickness of wafer is calculated, and generates radial average thickness point
Cloth table T2；
Wherein, the center of circle is the center O of wafer, radial average thickness=with point corresponding on the circle of Radius thickness summation/it is same
The sum of corresponding point on the circle of Radius.
4. according to the method described in claim 3, it is characterized in that, the step 1 further comprises: importing original work
The standard speed of related movement table T3 of skill formula, and import the standard generated under conditions of standard speed of related movement table T3
Removal rate table T4.
5. according to the method described in claim 4, it is characterized in that, the step 2 further comprises:
According to the radial average thickness distribution table T2, standard speed of related movement table T3 and standard removal rate table T4, calculate
And the speed of related movement at radially any point is corrected, and generate revised speed of related movement table t1；
Wherein, radially (the former point is gone speed of related movement=original this standard speed of related movement * at any point after amendment
Except the rate/point in the radial average thickness distribution table T2 corresponding thickness value).
6. according to the method described in claim 5, it is characterized in that, the step 1 further comprises: importing current duty cycle
With removal rate correction factor relation table T5, the current duty cycle and interior include at least of removal rate correction factor relation table T5 have one
Standard duty ratio, and there are a correction factor standard values corresponding to specific standard duty ratio.
7. according to the method described in claim 6, it is characterized in that, the step 3 further comprises:
According to the wafer overall situation thickness distribution table T1 and radial average thickness distribution table T2, wafer global any half is calculated
The corresponding mean value correction factor of each point on the circle of diameter, and generate the corresponding mean value correction factor distribution of each point on the circle of different radii
Table T6；And
According to the current duty cycle and removal rate correction factor relation table T5, different radii circle on the corresponding mean value of each point repair
Positive coefficient distribution table T6 calculates the corresponding actual duty cycle of each coordinate position point on wafer, and generates global duty cycle
Distribution table t2；
Wherein, the center of circle is the center O of wafer, circle where the actual correction coefficient=point thickness of any point/point on wafer
Radius, actual duty cycle=standard duty ratio * actual correction coefficient/correction factor standard value of any point on wafer.
8. the method according to the description of claim 7 is characterized in that in the global duty cycle distribution table t2:
If the value that the actual duty cycle of certain point is calculated is greater than 1, which will be taken as 1；
If the value of the actual duty cycle of certain point is calculated less than 0, which will be taken as 0.
9. according to the method described in claim 8, it is characterized in that, the step 4 further comprises: the new technique is matched
It include the speed of related movement table t1 and global duty cycle distribution table t2 in side, and table t1 and table t2 have been corrected.
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| CN110044249B (en) * | 2019-04-30 | 2020-09-15 | 清华大学 | Film thickness measuring method and system and chemical mechanical polishing device |
| CN110207584B (en) * | 2019-04-30 | 2020-12-04 | 清华大学 | Film thickness measuring method and system and chemical mechanical polishing device |
| JP7103305B2 (en) * | 2019-05-29 | 2022-07-20 | 信越半導体株式会社 | How to cut the ingot |
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| US7189318B2 (en) * | 1999-04-13 | 2007-03-13 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7189318B2 (en) * | 1999-04-13 | 2007-03-13 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
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| Title |
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| 晶圆探针测试***校准;伍平 等;《压电与声光》;20130615;第35卷(第3期);第441-444页 |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai City, Pudong New Area China Zhangjiang High Tech Park of Shanghai Cailun Road No. 1690 building fourth Patentee before: ACM (SHANGHAI) Inc. |