CN105281194A - Garnet composite compound of ytterbium-doped yttrium manganese aluminosilicate - Google Patents
Garnet composite compound of ytterbium-doped yttrium manganese aluminosilicate Download PDFInfo
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- CN105281194A CN105281194A CN201510824646.6A CN201510824646A CN105281194A CN 105281194 A CN105281194 A CN 105281194A CN 201510824646 A CN201510824646 A CN 201510824646A CN 105281194 A CN105281194 A CN 105281194A
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- garnet
- ytterbium
- laser
- composite compound
- doped yttrium
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Abstract
The invention belongs to the technical field of photoelectron functional materials and especially relates to laser materials and femtosecond laser materials. The invention provides a garnet composite compound of ytterbium-doped yttrium manganese aluminosilicate of which the chemical formula is YbxY3-x-yMnyAl5-ySiyO12. The doping content of Yb is 0<x=<1.5 and the doping contents of Mn and Si are both 0<y=<1.5. A high temperature solid phase method is adopted as the synthetic method for ytterbium-doped yttrium manganese aluminosilicate, and the synthesis is under atmosphere environment. The structure of the garnet composite compound belongs to the garnet structure. Compared to ytterbium-doped yttrium aluminum garnet, the garnet composite compound has wider bandwidth of absorption and emission which is more suitable for laser diode pumping and helpful to obtain middle/high power femtosecond laser with shorter pulse width.
Description
Technical field
The invention belongs to technical field of optoelectronic functional materials, particularly relate to as laser and femtosecond laser material.
Background technology
Femto-second laser is technical equipment important in laser field and LASER Light Source, directly applies to retrofit and laser communications, has important application in fields such as medical science, nuclear physics, femtosecond pulse spectroscopy and high speed optical communications simultaneously.Femtosecond laser has unique ultrashort pulse, superpower characteristic, is the important directions of current laser cutting edge technology development, and femtosecond laser material, as the core work material producing femtosecond laser, has become one of focus of whole laser technology field development.
With yttrium-aluminium-garnet (Y
3al
5o
12) for the garnet material of representative has the features such as isotropism, high heat conductance, high optical quality, excellent mechanical strength and physical and chemical performance, through the research and development of nearly 50 years, mix ytterbium yttrium-aluminium-garnet (Yb:Y
3al
5o
12) near 1 micron, become very important laser material and femtosecond laser material in Laser output.The people such as SadaoUemura adopt kerr lens mode locking technology, have successfully been obtained the pulse laser that pulsewidth is 107mW for 35fs power output using yttrium aluminum garnet crystal with ytterbium doping as gain media; The people such as Wei Zhiyi adopt semiconductor saturable absorption mode-locking technique, have successfully been obtained the pulse laser that pulsewidth is 1.9W for 418fs power output to mix ytterbium yttrium aluminum garnet transparent ceramic equally as gain media.The people such as J.AusderAu have employed thin dish mode-locked laser technology in 2000 first using yttrium aluminum garnet crystal with ytterbium doping as gain media, and obtaining pulsewidth is the pulse laser of 730fs power output up to 16.2W.Because this laser technology effectively can solve the heat dissipation problem of laser medium, obtainable femtosecond laser power output obtains continuous lifting, and therefore, thin dish mode-locking technique has opened the new page that middle High Power Femtosecond Laser exports.The people such as Germany scientist W.Schneider in 2014 are using yttrium aluminum garnet crystal with ytterbium doping as gain media, power output is brought up to more than 100W by success, pulse duration is 800fs, so far, mix ytterbium yttrium-aluminium-garnet technically to obtain at thin dish mode-locked laser and apply to greatest extent and the most widely.But its pulse duration obtained but has been limited in about 700-800fs, and reason is that mixing ytterbium yttrium-aluminium-garnet half-peak breadth of emission peak near 1030nm only only has 9nm.As everyone knows, wider emission band is more conducive to obtaining shorter pulse laser, and for mixing ytterbium yttrium-aluminium-garnet, and sharp-pointed emission peak is that it becomes the critical defect of desirable middle High Power Femtosecond Laser material.
Disordered structure refers to that in crystal, some case is occupied by multiple atom simultaneously, and this structure is orderly within the scope of long-range, but partitive case site is unordered.When active ions mix after in the host crystal with disordered structure, if the case of institute's substitution atoms is unordered, then there will be multiple luminescence center and produce superimposed effect, thus causing it to absorb and emission band broadening.Therefore, structural analysis is combined with spectroscopy and laser performance, carry out broadening by design and structure disordered structure for mixing ytterbium yttrium-aluminium-garnet it mixes Yb
3+after absorption and emission band, thus be expected to shorten the laser pulse width that obtains using it as gain media.
Manganese aluminium garnet [Mn
3al
2(SiO
4)
3] be a kind of natural garnet, it has high heat conductance, excellent mechanical strength and physical and chemical performance equally.Because it and yttrium-aluminium-garnet belong to garnet structure together, characteristic ion (Y
3+and Mn
2+; 4 coordination Al
3+and Si
4+) between ionic radius very close, a kind of composite garnet can be formed therefore mix appropriate manganese aluminium garnet in yttrium-aluminium-garnet after.And there is metal cation Y in this composite garnet
3+and Mn
2+between Distribution Statistics, namely define the composite garnet with disordered structure, as active ions Yb
3+after mixing, Y can be occupied simultaneously
3+and Mn
2+position, there is multiple luminescence center, thus its spectral bandwidth of broadening.Absorption band after broadening will be more suitable for laser diode pump-coupling, and the emission band after broadening will be conducive to exporting the femtosecond laser of more short pulse duration.
Summary of the invention
The object of the invention is to open a kind of composite garnet compound and mix ytterbium aluminosilicate yttrium manganese, its chemical formula is Yb
xy
3-x-ymn
yal
5-ysi
yo
12yb doping content is 0<x≤1.5, the doping content of Mn and Si is 0<y≤1.5, it is compared and mixes ytterbium yttrium-aluminium-garnet and have wider absorption and transmitted bandwidth, more be applicable to laser diode-pumped, and be conducive to obtaining the middle High Power Femtosecond Laser of more short pulse duration.
Technical scheme of the present invention is as follows:
Concrete chemical equation is:
xYb
2O
3+(3-x-y)Y
2O
3+2yMnO+(5-y)Al
2O
3+2ySiO
2＝2Yb
xY
3-x-yMn
yAl
5-ySi
yO
12
Wherein, Yb doping content is 0<x≤1.5, and the doping content of Ca and Si is 0<y≤1.5.Raw materials used and purity is: Yb
2o
3(99.99%), Y
2o
3(99.99%), Al
2o
3(analyzing pure), SiO
2(analyzing pure) and MnO (analyzing pure).
The synthesis of mixing ytterbium aluminosilicate yttrium manganese adopts high temperature solid-state method, and synthetic environment is air, and detailed process is as follows: initial feed is Yb
2o
3, Y
2o
3, Al
2o
3, SiO
2and MnO, take raw material according to chemical equation according to stoichiometric proportion; Briquet material after grinding in ball grinder stirs; Be placed in Muffle furnace again after block material is placed in corundum cup and be warming up to 1100-1300 DEG C, Isothermal sinter synthesis 10-50 hour; After being down to room temperature taking-up, ground and mixed evenly, is again placed in Muffle furnace after briquet material and is warming up to 1300-1500 DEG C again; Isothermal sinter synthesis 10-50 hour, takes out after being down to room temperature.
Carried out X-ray powder diffraction analysis to mixing ytterbium aluminosilicate yttrium manganese, the peak type of gained diffracting spectrum and peak position are all consistent with ICSD lane database yttrium-aluminium-garnet pure phase, illustrate that obtained compound has the garnet structure the same with yttrium-aluminium-garnet.Powder absorption spectrum and emission spectrum test has been carried out to mixing ytterbium aluminosilicate yttrium manganese, result shows that its absorption spectrum is compared with emission spectrum and mixes ytterbium yttrium-aluminium-garnet and all occurred broadening phenomenon, and along with the increase broadening of manganese aluminium garnet doping content more obvious.Therefore, ytterbium aluminosilicate yttrium manganese of mixing prepared in the present invention is expected to become more applicable laser diode-pumped middle High Power Femtosecond Laser material, can also solve the difficult point of mixing the pulse duration of ytterbium yttrium-aluminium-garnet in thin dish mode-locked laser application and cannot shorten further preferably simultaneously.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described, but should not limit the scope of the invention with this.
Embodiment 1:
Ytterbium aluminosilicate yttrium manganese Yb is mixed in preparation
xy
3-x-ymn
yal
5-ysi
yo
12(x=0.3; Y=0.3,0.6,0.9,1.2,1.5), initial feed is Yb
2o
3, Y
2o
3, Al
2o
3, SiO
2and MnO, take raw material according to chemical equation respectively according to stoichiometric proportion; Briquet material after grinding in ball grinder stirs; Be placed in Muffle furnace again after block material is placed in corundum cup and be warming up to 1100-1300 DEG C, Isothermal sinter synthesis 10-50 hour; After being down to room temperature taking-up, ground and mixed evenly, is again placed in Muffle furnace after briquet material and is warming up to 1300-1500 DEG C again; Isothermal sinter synthesis 10-50 hour, takes out after being down to room temperature.X-ray powder diffraction analysis shows that in the thing phase of five kinds of compounds and ICSD database, yttrium-aluminium-garnet pure phase is consistent, and illustrates that it has garnet structure; Powder absorption spectroanalysis shows, the absorption half-peak breadth of five kinds of compounds near 934nm is respectively 59nm, 65nm, 68nm, 70nm and 76nm, absorption half-peak breadth near 966nm is respectively 25nm, 27nm, 28nm, 30nm and 33nm, compare the half-peak breadth of mixing ytterbium yttrium-aluminium-garnet 18nm near 940nm and the half-peak breadth of 4nm all has obvious broadening near 968nm, and broadening is more obvious along with the increase of manganese aluminium garnet content; Emission spectrographic analysis shows, the absorption half-peak breadth of five kinds of compounds near 1030nm is respectively 13nm, 16nm, 18nm, 21nm and 25nm, compare the half-peak breadth of mixing ytterbium yttrium-aluminium-garnet garnet 9nm near 1030nm and all have obvious broadening, and broadening is more obvious along with the increase of manganese aluminium garnet content.
Claims (3)
1. mix ytterbium aluminosilicate yttrium manganese, it is characterized in that: chemical formula is Yb
xy
3-x-ymn
yal
5-ysi
yo
12, Yb doping content is 0<x≤1.5, and the doping content of Mn and Si is 0<y≤1.5, belongs to garnet structure.
2. mix the purposes of ytterbium aluminosilicate yttrium manganese as claimed in claim 1, it is characterized in that: this compound can be used for being prepared into fluorescent material, laser ceramics and laser crystal.
3. mix the purposes of ytterbium aluminosilicate yttrium manganese as claimed in claim 1, it is characterized in that: the fluorescent material prepared by this compound, laser ceramics and laser crystal can be used for producing continuous laser, tunable laser and femtosecond laser.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510824646.6A CN105281194A (en) | 2015-11-24 | 2015-11-24 | Garnet composite compound of ytterbium-doped yttrium manganese aluminosilicate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510824646.6A CN105281194A (en) | 2015-11-24 | 2015-11-24 | Garnet composite compound of ytterbium-doped yttrium manganese aluminosilicate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105281194A true CN105281194A (en) | 2016-01-27 |
Family
ID=55149760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510824646.6A Pending CN105281194A (en) | 2015-11-24 | 2015-11-24 | Garnet composite compound of ytterbium-doped yttrium manganese aluminosilicate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002009245A2 (en) * | 2000-07-21 | 2002-01-31 | Utar Scientific Inc. | An upconversion active gain medium and a micro-laser on the basis thereof |
| US20040062699A1 (en) * | 2002-09-25 | 2004-04-01 | Matsushita Electric Industrial Co. | Inorganic oxide and phosphor |
| CN1955116A (en) * | 2005-10-24 | 2007-05-02 | 富士胶片株式会社 | Inorganic compound, composition and molded body containing the same, light emitting device, and solid laser device |
| CN101018841A (en) * | 2004-08-11 | 2007-08-15 | 独立行政法人物质·材料研究机构 | Phosphor, production method thereof and light emitting instrument |
-
2015
- 2015-11-24 CN CN201510824646.6A patent/CN105281194A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002009245A2 (en) * | 2000-07-21 | 2002-01-31 | Utar Scientific Inc. | An upconversion active gain medium and a micro-laser on the basis thereof |
| US20040062699A1 (en) * | 2002-09-25 | 2004-04-01 | Matsushita Electric Industrial Co. | Inorganic oxide and phosphor |
| CN101018841A (en) * | 2004-08-11 | 2007-08-15 | 独立行政法人物质·材料研究机构 | Phosphor, production method thereof and light emitting instrument |
| CN1955116A (en) * | 2005-10-24 | 2007-05-02 | 富士胶片株式会社 | Inorganic compound, composition and molded body containing the same, light emitting device, and solid laser device |
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Application publication date: 20160127 |