CN105277514A - Visible light refractive index sensor and machining method thereof - Google Patents
Visible light refractive index sensor and machining method thereof Download PDFInfo
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- CN105277514A CN105277514A CN201510833559.7A CN201510833559A CN105277514A CN 105277514 A CN105277514 A CN 105277514A CN 201510833559 A CN201510833559 A CN 201510833559A CN 105277514 A CN105277514 A CN 105277514A
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Abstract
The invention provides a visible light refractive index sensor and a machining method thereof and relates to optical sensors. The visible light refractive index sensor is in a three-layered structure and is sequentially provided with a substrate, a nano imprinting glue layer, a chromium layer and a silver layer from bottom to top. The machining method comprises the following steps: putting the substrate into a glue homogenizing machine; uniformly coating ultraviolet cured nano imprinting glue on the substrate and baking to form the nano imprinting glue layer on the substrate; putting a middle polymer soft membrane with a clean surface on the surface of a nickel template to carry out heat nano imprinting to obtain a middle polymer soft template; obtaining a nano structure which is complementary with the nickel template on the surface of the middle polymer soft template, and taking the middle polymer soft template as an ultraviolet nano imprinting template; putting the substrate coated with the nano imprinting glue layer on the surface on a nano imprinting photo-etching system sample platform to be subjected to ultraviolet nano imprinting, so as to obtain a nano structure complementary with the middle polymer template on the surface of the nano imprinting glue layer; and evaporating the chromium layer by using an electronic beam evaporation instrument and evaporating the silver layer to obtain the visible light refractive index sensor.
Description
Technical field
The present invention relates to optical sensor, especially relate to a kind of visible ray index sensor and job operation thereof.
Background technology
In recent years, size is little, periodicity good and highly sensitive optical sensor is the focus of academia and even industry member research always, and it can be widely used in various detection technique.Surface plasmon resonance effect is a kind of optoelectronic phenomena being interacted by light wave and metal electron and caused, when equal with the vector component of surface plasma wave along the light wave vector component at interface, plasma resonance can be there is, incident light energy is absorbed in a large number, cause energy of reflection light significantly to reduce, in reflectance spectrum, form the reflection paddy of characteristic frequency.There is the prism sensor based on Applications of surface plasmon resonance in late 1960s, raster pattern, waveguide type and optical fiber SPR sensor arise at the historic moment, and be widely used in multiple fields such as biochemistry, medical science, environmental protection.Especially optical fiber SPR sensor, have volume little, simple to operate, can realize online real-time remote detect and monitoring and other advantages, be mainly used in solution concentration at present to measure, but just have higher sensitivity when only having external environment condition refractive index to be less than or equal to the refractive index of fibre cladding, this just greatly limit its application in chemical detection.
In existing making spr sensor technology, first chemical synthesising technology is utilized can to manufacture a large amount of structure and the controlled nano particle of crystallinity, recycling photoetching technique makes nano particle keep direction consistent, thus the nanostructured prepared evenly in periodic arrangement, the speed that electron beam lithography determines its making sample due to its technological process is very slow, be not suitable for making large-area sample, and each processing is all very consuming time, not can manufacture device.And the nanometer embossing method that to be processable polymer structure the most frequently used, its adopts the method such as high resolution electron beam by baroque nanostructured pattern on mould, then with the mould of patterning in advance, polymeric material be out of shape and form structure plan on polymer, having that production efficiency is high, cost is low, simple technological process and other advantages.Nanometer embossing mainly comprises hot padding and ultraviolet stamping, and hot press printing technology is a kind of low and fireballing method of cost obtaining parallel replicated architecture at micro-nano-scale, is widely used in micro-nano structure processing; Ultraviolet stamping technology is lower to environmental requirement, only just can carry out under room temperature and low-pressure, thus uses the production of this technology greatly can shorten the production cycle, reduces wearing and tearing simultaneously.
Therefore, how ensureing low cost, the extensive repeatable large-area visible ray index sensor of manufacture, and realize the accuracy controlling to its moulded dimension, is a problem being worth probing into.
Chinese patent CN103728275A discloses a kind of optical index sensor based on optics Tamm state phasmon, comprise metallic film and distributed bragg reflector mirror, described distributed bragg reflector mirror comprises the high refractive index layer and air layer that some layers are arranged alternately with each other, connected by contiguous block between two adjacent high refractive index layers, described metallic film is in close proximity to the side of the high refractive index layer in distributed bragg reflector mirror.
Summary of the invention
The object of the present invention is to provide a kind of visible ray index sensor and the job operation thereof that can prepare the neat micro-nano structure of large area structure.
Described visible ray index sensor is 3-tier architecture, be provided with substrate, nano impression glue-line, layers of chrome and silver layer from bottom to up successively, described nano impression glue-line is coated on the upper surface of substrate, the micro-nano round metal pores array of the upper surface depositing homogeneous periodic arrangement of nano impression glue-line, layers of chrome evaporation is on nano impression glue-line, and silver layer evaporation is in layers of chrome.
The thickness of nano impression glue-line can be 200 ~ 250nm; The thickness of layers of chrome can be 10 ~ 20nm; The thickness of silver layer can be 200 ~ 250nm; The described cycle can be 500 ~ 600nm.
The job operation of described visible ray index sensor, comprises the following steps:
1) substrate is placed in sol evenning machine, adopts the mode of spin coating ultraviolet solidified nano to be impressed glue and be coated on equably on substrate, after baking, namely on substrate, form nano impression glue-line;
In step 1) in, described substrate can adopt silicon chip, and described silicon chip can select the silicon chip of single-sided polishing, and cleans according to standard cleaning flow process; The rotating speed of described spin coating can be 2000r/min; The thickness of described nano impression glue-line can be 200 ~ 250nm; The condition of described baking can in 95 DEG C of baking 2min.
2) nano impression: the intermediate polymer mantle of surface clean is placed on nickel template surface and carries out hot nano impression, obtain intermediate polymer soft template, the nanostructured with the complementation of nickel template is obtained on intermediate polymer soft template surface, with intermediate polymer soft template for ultraviolet nanometer impression block, substrate surface being scribbled nano impression glue-line is placed on nano-imprint lithography system sample stage and carries out ultraviolet nanometer impression, obtains the nanostructured with the complementation of intermediate polymer template at nano impression film surface;
3) by the first evaporation layers of chrome of electron beam evaporation plating instrument, then evaporation silver layer, obtain visible ray index sensor.
Micro-nano round metal pores array of the present invention adopts nano-imprint process to make, and why can make visible ray index sensor by the method for nano impression, is because it has following features:
(1) nano-imprint stamp adopting direct electronic beam writing technology to make, its measure of precision can meet the requirement of device pair array cycle and array diameter completely.
(2) accurately the use of template can ensure the consistance of each array element well.
(3) due to the employing of nanometer embossing, the cost of manufacture of device is reduced, and can be used for a large amount of productions in industry.
(4) operation steps is simple, can not remove cull.
Just based on as above feature, nano impression just can under the technological requirement ensureing visible ray index sensor, apply in commercial production simultaneously, technique is simple, size is little, highly sensitive, cost is low, make the application of visible ray index sensor more extensive.
Accompanying drawing explanation
Fig. 1 is the structure composition schematic diagram of visible ray index sensor embodiment of the present invention.
Fig. 2 is the work flow schematic diagram of visible ray index sensor embodiment of the present invention.
Embodiment
Following examples will the present invention is further illustrated by reference to the accompanying drawings.
See Fig. 1 and 2, described visible ray index sensor embodiment is 3-tier architecture, be provided with substrate 1, nano impression glue-line 2, layers of chrome 3 and silver layer 4 from bottom to up successively, described nano impression glue-line 2 is coated on the upper surface of substrate 1, the micro-nano round metal pores array of the upper surface depositing homogeneous periodic arrangement of nano impression glue-line 2, layers of chrome 3 evaporation is on nano impression glue-line 2, and silver layer 4 evaporation is in layers of chrome 3.
The thickness of nano impression glue-line can be 200 ~ 250nm; The thickness of layers of chrome can be 10 ~ 20nm; The thickness of silver layer can be 200 ~ 250nm; The described cycle can be 500 ~ 600nm.
The job operation of visible ray index sensor, concrete steps are as follows:
(1) silicon chip selecting single-sided polishing is substrate, according to standard cleaning flow process cleaning silicon wafer.
(2) silicon chip that step (1) obtains is placed in sol evenning machine, adopt the mode of spin coating ultraviolet solidified nano to be impressed glue and be coated in equably on silicon chip, the rotating speed of spin coating is 2000r/min, the thick 200nm of glue, 95 DEG C of baking 2min.
(3) the intermediate polymer mantle of surface clean is placed on nickel template surface and carries out hot nano impression, obtain intermediate polymer soft template, obtain the nanostructured with the complementation of nickel template on intermediate polymer soft template surface.With intermediate polymer soft template for ultraviolet nanometer impression block, silicon chip surface being scribbled nano impression glue-line is placed on nano-imprint lithography system sample stage and carries out ultraviolet nanometer impression, obtains the nanostructured with the complementation of intermediate polymer template at nano impression film surface.
(4) by the first evaporation layers of chrome of electron beam evaporation plating instrument, then evaporation silver layer, obtain visible ray index sensor.
The present invention can by changing the response of round metal bore hole size realization to different optical frequencies.In order to make micro-nano circular hole hole wall be argent entirely, should ensure that the thickness of silver layer is more than the nano-imprint process template degree of depth.Adopt different nano-imprint stamps can change the feature such as physical dimension and array period of micro-nano round metal hole, in visible-range, the light wave of different frequency range can produce and reflect paddy accordingly, thus realizes the response of the different optical frequencies of visible ray index sensor.
Claims (8)
1. visible ray index sensor, it is characterized in that it is 3-tier architecture, be provided with substrate, nano impression glue-line, layers of chrome and silver layer from bottom to up successively, described nano impression glue-line is coated on the upper surface of substrate, the micro-nano round metal pores array of the upper surface depositing homogeneous periodic arrangement of nano impression glue-line, layers of chrome evaporation is on nano impression glue-line, and silver layer evaporation is in layers of chrome.
2. visible ray index sensor as claimed in claim 1, is characterized in that the thickness of described nano impression glue-line is 200 ~ 250nm; The thickness of layers of chrome is 10 ~ 20nm; The thickness of silver layer is 200 ~ 250nm.
3. visible ray index sensor as claimed in claim 1, is characterized in that the described cycle is 500 ~ 600nm.
4. the job operation of visible ray index sensor as claimed in claim 1, is characterized in that comprising the following steps:
1) substrate is placed in sol evenning machine, adopts the mode of spin coating ultraviolet solidified nano to be impressed glue and be coated on equably on substrate, after baking, namely on substrate, form nano impression glue-line;
2) nano impression: the intermediate polymer mantle of surface clean is placed on nickel template surface and carries out hot nano impression, obtain intermediate polymer soft template, the nanostructured with the complementation of nickel template is obtained on intermediate polymer soft template surface, with intermediate polymer soft template for ultraviolet nanometer impression block, substrate surface being scribbled nano impression glue-line is placed on nano-imprint lithography system sample stage and carries out ultraviolet nanometer impression, obtains the nanostructured with the complementation of intermediate polymer template at nano impression film surface;
3) by the first evaporation layers of chrome of electron beam evaporation plating instrument, then evaporation silver layer, obtain visible ray index sensor.
5. the job operation of visible ray index sensor as claimed in claim 4, is characterized in that in step 1) in, described substrate adopts silicon chip.
6. the job operation of visible ray index sensor as claimed in claim 5, is characterized in that described silicon chip selects the silicon chip of single-sided polishing, and cleans according to standard cleaning flow process.
7. the job operation of visible ray index sensor as claimed in claim 4, is characterized in that in step 1) in, the rotating speed of described spin coating is 2000r/min.
8. the job operation of visible ray index sensor as claimed in claim 4, is characterized in that in step 1) in, the condition of described baking is in 95 DEG C of baking 2min.
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| CN201510833559.7A CN105277514A (en) | 2015-11-25 | 2015-11-25 | Visible light refractive index sensor and machining method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107930712A (en) * | 2017-12-22 | 2018-04-20 | 厦门百恩芯科技有限公司 | Biomedical detecting system based on nano impression micro flow chip and preparation method thereof |
| CN109655180A (en) * | 2019-01-16 | 2019-04-19 | 吉林大学 | Pliable pressure sensor and preparation method thereof based on crackle array structure |
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| CN103808691A (en) * | 2014-02-19 | 2014-05-21 | 中国科学院半导体研究所 | Asymmetric Au particle array and FPcavity coupled refractive index sensor |
| CN103926218A (en) * | 2014-05-04 | 2014-07-16 | 电子科技大学 | High-sensitivity refractive index sensor based on surface plasma resonance |
| JP5657645B2 (en) * | 2010-03-31 | 2015-01-21 | 株式会社カネカ | Structure, localized surface plasmon resonance sensor chip, localized surface plasmon resonance sensor, and methods of manufacturing the same |
| CN104849783A (en) * | 2015-05-15 | 2015-08-19 | 厦门大学 | Visible and near infrared light absorber based on nanoimprint lithography process and processing method thereof |
| CN205139007U (en) * | 2015-11-25 | 2016-04-06 | 厦门大学 | Visible light refracting index sensor |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101261227A (en) * | 2007-03-05 | 2008-09-10 | 欧姆龙株式会社 | Surface plasmon resonance sensor and chip used for the same |
| JP5657645B2 (en) * | 2010-03-31 | 2015-01-21 | 株式会社カネカ | Structure, localized surface plasmon resonance sensor chip, localized surface plasmon resonance sensor, and methods of manufacturing the same |
| CN103808691A (en) * | 2014-02-19 | 2014-05-21 | 中国科学院半导体研究所 | Asymmetric Au particle array and FPcavity coupled refractive index sensor |
| CN103926218A (en) * | 2014-05-04 | 2014-07-16 | 电子科技大学 | High-sensitivity refractive index sensor based on surface plasma resonance |
| CN104849783A (en) * | 2015-05-15 | 2015-08-19 | 厦门大学 | Visible and near infrared light absorber based on nanoimprint lithography process and processing method thereof |
| CN205139007U (en) * | 2015-11-25 | 2016-04-06 | 厦门大学 | Visible light refracting index sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107930712A (en) * | 2017-12-22 | 2018-04-20 | 厦门百恩芯科技有限公司 | Biomedical detecting system based on nano impression micro flow chip and preparation method thereof |
| CN109655180A (en) * | 2019-01-16 | 2019-04-19 | 吉林大学 | Pliable pressure sensor and preparation method thereof based on crackle array structure |
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Application publication date: 20160127 |