CN105274527A - Etching solution composition and manufacturing method of array substrate for liquid crystal display using the same - Google Patents
Etching solution composition and manufacturing method of array substrate for liquid crystal display using the same Download PDFInfo
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- CN105274527A CN105274527A CN201510354318.4A CN201510354318A CN105274527A CN 105274527 A CN105274527 A CN 105274527A CN 201510354318 A CN201510354318 A CN 201510354318A CN 105274527 A CN105274527 A CN 105274527A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses an etching solution composition, which comprises a metal layer oxidizing agent, a fluoride, a compound containing nitrogen atoms, phosphoric acid, polyethylene glycol and water as the balance. For 1g of the etching solution composition, the millimole content of repetitive units in the polyethylene glycol represents the level of ethylene oxide. Meanwhile, the level of ethylene oxide in the etching solution composition is 0.4-2. The invention also discloses a manufacturing method of an array substrate for a liquid crystal display using the same.
Description
Technical field
The present invention relates to a kind of etchant for metal level and a kind of this etchant that uses manufactures for the method for the array substrate of liquid-crystal display.
Background technology
Along with the flat panel display screen of such as LCD, PDP and OLED particularly TFT-LCD becomes large, extensively rethink the individual layer adopting and be made up of copper or copper alloy, or adopt copper or copper alloy/other metal, the alloy of other metal or metal oxide be greater than two-layer multilayer, to reduce routing resistance and to improve the binding property with dielectric silicon layer.Such as, copper/molybdenum layer, copper/titanium layer or copper/molybdenum-titanium layer can be formed as the grid line of TFT-LCD and the source/drain wiring of composition data line, and can contribute to expanding indicator screen.Therefore, exploitation is needed to have the composition of superior etch characteristic for etching these metal levels comprising base copper.
As etch combination above-mentioned, usually use hydrogen peroxide and amino acids etching solution, hydrogen peroxide and phosphoric acid class etching solution, hydrogen peroxide and polyethylene glycols etching solution etc.
As an example, Korean Patent Publication No 10-2011-0031796 discloses a kind of etching solution comprising water-soluble cpds, has: A) hydrogen peroxide (H
2o
2), B) persulphate, C) there is soluble compound and the water of amino and carboxyl.
Korean Patent Publication No 10-2012-0044630 discloses a kind of etching solution of the metal level for cupric, comprising: hydrogen peroxide, phosphoric acid, cyclic amine compound, vitriol, fluoroboric acid and water.
Korean Patent Publication No 10-2012-0081764 discloses a kind of etching solution, comprising: A) ammonium hydroxide, B) hydrogen peroxide, C) fluorochemical, D) polyvalent alcohol and E) water.
But, for the metal level containing base copper in the sheet material quantity etc. of CD loss, gradient (tapering), pattern lines degree, metallic residue, package stability, process, the condition required by etching solution above-mentioned is not enough to meet in association area.
Patent documentation
Patent documentation 1: Korean Patent Publication No 10-2011-0031796
Patent documentation 2: Korean Patent Publication No 10-2012-0044630
Patent documentation 3: Korean Patent Publication No 10-2012-0081764
Summary of the invention
Therefore, make the present invention to solve the problem, and the object of this invention is to provide a kind of etchant, it has excellent job security, excellent etch-rate and the excellent processing power to a large amount of sheet material, a kind of etchant is particularly provided, its there is excellent etch-rate and to the excellent processing power of a large amount of sheet material while also there is optimal etch profile; And a kind of method using said composition to manufacture array substrate for liquid crystal display is provided.
To achieve these goals, one aspect of the present invention provides a kind of etchant, comprising: metal layer agent; Fluorochemical; The compound of nitrogen atom; Phosphoric acid; The polyoxyethylene glycol of following chemical formula 1; And the water of surplus, wherein, based on 1 gram of described etchant, the mmole amount of the repeating unit of the polyoxyethylene glycol of following chemical formula 1 is used for representative ring oxidative ethane level, and the oxyethane level of described etchant is 0.4 ~ 2.
[chemical formula 1]
Wherein n is the integer of 2 ~ 100, and
R
1and R
2be hydrogen, the aliphatic alkyl of C1 ~ C4 or phenyl independently of one another.
Another aspect of the present invention provides a kind of manufacture for the method for the array substrate of liquid-crystal display, comprising:
A) on substrate, form the step of grid;
B) on the described substrate comprising described grid, form the step of gate insulator;
C) on described gate insulator, form the step of semiconductor layer;
D) on described semiconductor layer, form the step of source/drain; And
E) step with the described pixel electrode be connected that drains is formed;
Wherein, step a), d) or e) comprises formation metal level and uses etchant according to the present invention to etch the step that described metal level forms electrode.
The sheet material quantity of etching metal layer fluid composition of the present invention by regulating repeating unit can increase process.
In addition, etching metal layer fluid composition of the present invention provides excellent etch-rate.
Further, for such as comprising the hydrogen peroxide of low levels containing the etchant of metal level of base copper, therefore its tool has the following advantages: excellent job security, price competitiveness and can dispose the effect of this etching solution economically.
Further, the etchant manufacture in the present invention is used to allow to manufacture the array substrate for liquid crystal display with excellent drive characteristic by forming the electrode with superior etch profile on the array substrate for liquid-crystal display for the method for the array substrate of liquid-crystal display.
Embodiment
Below, detailed description of the present invention will be provided.
The present invention relates to a kind of etchant, comprising: metal layer agent; Fluorochemical; The compound of nitrogen atom; Phosphoric acid; The polyoxyethylene glycol of following chemical formula 1; And the water of surplus, wherein, based on 1 gram of etchant, the mmole amount of the repeating unit of the polyoxyethylene glycol of following chemical formula 1 is used for representative ring oxidative ethane level, and the oxyethane level of above-mentioned etchant is 0.4 ~ 2.
[chemical formula 1]
Wherein n is the integer of 2 ~ 100, and
R
1and R
2be hydrogen, the aliphatic alkyl of C1 ~ C4 or phenyl independently of one another.
Further, more preferably R
1and R
2be hydrogen or methyl independently of one another.
The present invention by regulate the repeating unit of chemical formula 1 can provide oxyethane level be 0.4 ~ 2 etchant, and improve the sheet material quantity of etch-rate and process thus, the etching metal layer fluid composition showing optimal etch profile finally can be provided.
In the present invention, oxyethane level is preferably 0.4 ~ 2, is more preferably 0.8 ~ 1.5.If oxyethane level is less than 0.4, be inadequate to the improvement of sheet material quantity of process, and if it is more than 2, there is the problem that etch-rate reduces because viscosity increases.
Metal layer agent is the main ingredient for metal oxide layer, and it has no particular limits, but can be selected from the group that is made up of hydrogen peroxide, peracetic acid, acidified metal, nitric acid, persulphate, haloid acid and halate etc. one or more.
Acidified metal refers to oxidized metal, such as Fe
3+, Cu
2+deng, and it is dissociated into Fe under being included in solution state
3+, Cu
2+deng compound.Persulphate comprises ammonium persulphate, persulfuric acid an alkali metal salt, ammonium persulfate-sodium bisulfate (oxone) etc., and halate comprises oxymuriate, perchlorate, bromate, hyperbromic acid salt etc.
Etching metal layer fluid composition is by comprising following component to prepare: based on the gross weight of composition,
The metal layer agent of 1wt% ~ 40wt%;
The fluorochemical of 0.1wt% ~ 5wt%;
The compound of the nitrogen atom of 0.1wt% ~ 10wt%;
The phosphoric acid of 0.01wt% ~ 10wt%;
The wt% amount of the polyoxyethylene glycol of chemical formula 1 makes described oxyethane level be 0.4 ~ 2; And
The water of surplus.
The content of metal layer agent can carry out suitable control according to the type of oxygenant and character, and when the amount of metal layer agent falls in above-mentioned scope, suitably can regulate the etch-rate of metal level.
The polyoxyethylene glycol of chemical formula 1 of the present invention is the addition polymer of oxyethane, and its repeating unit is ethylene oxide,1,2-epoxyethane.Based on the gross weight of composition, the wt% of the polyoxyethylene glycol of chemical formula 1 amount is the oxyethane level of the polyoxyethylene glycol making chemical formula 1 is 0.4 ~ 2, is preferably 0.8 ~ 1.5.Therefore, by regulating the repeating unit of chemical formula 1, the sheet material quantity can preparing process increases and does not reduce the etching metal layer fluid composition of etch-rate.
Be included in fluorochemical in etchant of the present invention for removing etch residue, and for etching titanium-based metal layer.
Based on the gross weight of composition, the amount of fluorochemical can be 0.1wt% ~ 5wt%, more preferably 0.1wt% ~ 2wt%.
Preferred above-mentioned scope is because can prevent etch residue and not cause the etching of glass substrate or silicon layer below.
But, if the amount of fluorochemical exceeds above-mentioned scope, because inhomogenous etching characteristic causes producing spot in substrate, because too fast etch-rate lower floor may be damaged, and be difficult to control etch-rate during processing.
Preferably, fluorochemical can be the compound that can be dissociated into fluorion or polyatom fluorion (polyatomicfluorineion).
The compound that can be dissociated into fluorion or polyatom fluorion can be to be selected from the group that is made up of Neutral ammonium fluoride, Sodium Fluoride, Potassium monofluoride, sodium hydrogen fluoride and potassium bifluoride one or more.
Be included in the etch-rate of compound for increasing etching solution and the sheet material quantity of process of the nitrogen atom in etchant of the present invention.
The compound of nitrogen atom known in the art can be used and do not limit, and the compound in the molecule containing amino and carboxylic acid group can be used typically.
The a-amino acid such as containing a carbon atom between carboxylic acid group and amino can be comprised in the molecule containing compound that is amino and carboxylic acid group, and be typically: monovalence amino acid, such as glycine, L-glutamic acid, glutamine, Isoleucine, proline(Pro), tyrosine, arginine etc.; With multivalence amino acid, such as iminodiethanoic acid, nitrilotriacetic acid(NTA), ethylene glycol tetraacetic.The compound of nitrogen atom can be used alone or combinationally using with two or more.
Based on the gross weight of composition, the amount of the compound of nitrogen atom is 0.1wt% ~ 10wt%, is more preferably 1wt% ~ 5wt%.Preferred above-mentioned scope is because it can improve the etch-rate of etching solution and the sheet material quantity of process.
Metal layer agent is to the etching of copper by providing hydrogen ion to promote to etching solution for phosphoric acid.In addition, form phosphoric acid salt owing to being combined with oxidized cupric ion and adding the solvability in water, which eliminating the metal level residue after etching.
Based on the gross weight of composition, the amount of phosphoric acid is 0.01wt% ~ 10wt%, and is more preferably 0.01wt% ~ 1wt%.When the amount of phosphoric acid meets above-mentioned scope, the function of expection can be performed, because the risk of over etching metal level and the corrosion lower floor caused by phosphoric acid can be avoided, and the problem of the etch-rate step-down of the too low copper metal layer of content due to phosphoric acid can not be caused.
The water used in the present invention refers to deionized water, uses the water being used for semiconductor technology, and preferably uses the water being greater than 18M Ω/cm.
Except component above-mentioned, etchant of the present invention also can comprise at least one be selected from etching control agent, tensio-active agent, sequestrant, corrosion inhibitor and pH adjusting agent.
Be not particularly limited with the metal level that etchant of the present invention etches, but the multilayer that etchant of the present invention can be preferred for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or be made up of these layers.
Copper base metal layer refers to layers of copper or copper alloy layer, and molybdenum base metal layer refers to molybdenum layer or Mo alloy, and titanium-based metal layer refers to titanium layer or titanium alloy layer.
Multilayer comprises: such as, the bilayer of molybdenum base metal layer/copper base metal layer, wherein, and copper base metal Ceng Shi lower floor and molybdenum base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base metal layer, wherein, Mo layer is lower floor and copper base metal layer is upper strata; The bilayer of copper base metal layer/molybdenum base and titanium-based metal layer; And be greater than the multilayer of three layers, and wherein, copper base metal layer and molybdenum base metal layer intersecting, such as molybdenum base metal layer/copper base metal layer/molybdenum base metal layer, or copper base metal layer/molybdenum base metal layer/copper base metal layer.
In addition, multilayer comprises: such as, the bilayer of titanium-based metal layer/copper base metal layer, and wherein, copper metal layer is lower floor and titanium-based metal layer is upper strata; The bilayer of copper base metal layer/titanium-based metal layer, wherein, titanium coating is lower floor and copper base metal layer is upper strata; And be greater than the multilayer of three layers, and wherein, copper base metal layer and titanium-based metal layer intersecting, such as titanium-based metal layer/copper base metal layer/titanium-based metal layer, or copper base metal layer/titanium-based metal layer/copper base metal layer.
Form upper strata or the material of lower floor or the binding property etc. with layer by multiple consideration, the interlayer unitized construction of multilayer can be determined.
Copper alloy layer, Mo alloy or titanium alloy layer refer to the metal level produced as alloy, and in the alloy, copper, molybdenum or titanium are main ingredient and the metal using other different according to film character.Such as, Mo alloy refers to using the layer produced for main ingredient and containing one or more the alloy be selected from titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In) as molybdenum.
As the embodiment of etchant of the present invention, hydrogen peroxide can be used as metal layer agent, and can comprise fluorochemical, the compound of nitrogen atom, phosphoric acid, the polyoxyethylene glycol of chemical formula 1 and the water of surplus.
Hydrogen peroxide is the main ingredient be oxidized copper, molybdenum and titanium, and based on the gross weight of composition, its amount can be 1wt% ~ 25wt%, is preferably greater than 1wt% and is less than or equal to 10wt%, being more preferably and being greater than 1wt% and being less than or equal to 5wt%.
When the amount of hydrogen peroxide falls in above-mentioned scope, prevent the etch-rate of copper, molybdenum and titanium to be deteriorated, the etching of appropriate amount can be realized, and excellent etching outline can be obtained.
But, if the amount of hydrogen peroxide exceeds above-mentioned scope, then can not there is etching or over etching can occur, therefore pattern loss and the loss function as metal line may occur.
The component forming etchant of the present invention preferably has semiconductor technology purity.
Further, the present invention relates to the method for a kind of manufacture for the array substrate of liquid-crystal display, comprising:
A) on substrate, form the step of grid;
B) on the substrate comprising grid, form the step of gate insulator;
C) on gate insulator, form the step of semiconductor layer;
D) step of source/drain is formed on the semiconductor layer; And
E) step with the pixel electrode be connected that drains is formed;
Wherein, step a), d) or e) comprises formation metal level and uses etchant etch metal layers according to the present invention to form the step of electrode.
The array substrate for liquid crystal display produced by aforesaid method has excellent drive characteristic because of comprising the electrode with superior etch profile.
Array substrate for liquid crystal display can be thin film transistor (TFT) array substrate.
Hereinafter, the embodiment by providing is described in more detail the present invention.But following embodiment is used for illustrating in greater detail the present invention, scope of the present invention is not by the restriction of following embodiment.Following embodiment suitably can be modified by those skilled in the art within the scope of the invention.
< prepares etchant >
Embodiment 1 ~ 6 and comparative example 1 ~ 6:
By having prepared etchant with the content blending ingredients described in following table 1.
[table 1]
(unit: wt%)
[chemical formula 2]
[chemical formula 3]
[chemical formula 4]
[chemical formula 5]
[chemical formula 6]
[chemical formula 7]
[chemical formula 8]
Experimental example 1: assessment etchant is for the etching outline of Cu/Mo-Ti bilayer
The etchant of embodiment 1 ~ 6 and comparative example 1 ~ 6 is used to carry out the etching of Cu/Mo-Ti bilayer.The etchant that use temperature is about 30 DEG C when etched carries out the etching of 100 seconds.Measure EPD (end point determination (EndPointDetection), metal etch timing) by naked eyes and obtain etch-rate according to the time.Use SEM (Hitachi, Ltd, model S4700) to have detected the profile cross section of the Cu/Mo-Ti bilayer through etching, result is shown in following table 2.
Experimental example 2: the sheet material quantity of evaluation process
Use the etchant of embodiment 1 ~ 6 and comparative example 1 ~ 6 to carry out with reference to test, and in the etching solution for reference test, add the copper powder of 4000ppm and dissolve completely.Afterwards, again etch with the etching solution carried out with reference to test, and the reduction ratio of etch-rate is assessed.
< evaluation criteria >
Zero: excellent (the reduction ratio of etch-rate is less than 10%)
△: good (the reduction ratio of etch-rate is 10% ~ 20%)
×: poor (the reduction ratio of etch-rate is greater than 20%)
[table 2]
Claims (9)
1. an etchant, comprising: metal layer agent; Fluorochemical; The compound of nitrogen atom; Phosphoric acid; The polyoxyethylene glycol of following chemical formula 1; And the water of surplus,
Wherein, based on 1 gram of described etchant, the mmole amount of the repeating unit of the polyoxyethylene glycol of following chemical formula 1 is used for representative ring oxidative ethane level, and the oxyethane level of described etchant is 0.4 ~ 2,
Wherein n is the integer of 2 ~ 100, and
R
1and R
2be hydrogen, the aliphatic alkyl of C1 ~ C4 or phenyl independently of one another.
2. etchant according to claim 1, wherein, R
1and R
2be hydrogen or methyl independently of one another.
3. etchant according to claim 1, wherein, described metal layer agent be selected from the group that is made up of hydrogen peroxide, peracetic acid, acidified metal, nitric acid, persulphate, haloid acid and hydrohalogen one or more.
4. etchant according to claim 1, based on the gross weight of described composition, comprising:
The described metal layer agent of 1wt% ~ 40wt%;
The described fluorochemical of 0.1wt% ~ 5wt%;
The compound of the described nitrogen atom of 0.1wt% ~ 10wt%;
The phosphoric acid of 0.01wt% ~ 10wt%;
The wt% amount of the polyoxyethylene glycol of described chemical formula 1 makes described oxyethane level be 0.4 ~ 2; And
The water of surplus.
5. etchant according to claim 4, wherein, described metal layer agent comprises hydrogen peroxide.
6. etchant according to claim 5, based on the gross weight of described composition, comprises the hydrogen peroxide of 1wt% ~ 25wt%, and wherein, the compound of described nitrogen atom is amino acid.
7. etchant according to claim 1, wherein, described etchant is used for etch copper base metal layer, molybdenum base metal layer, titanium-based metal layer or their multilayer.
8. etchant according to claim 7, wherein, described multilayer is copper base metal layer/Mo layer, copper base metal layer/titanium-based metal layer, or copper base metal layer/molybdenum-titanium base alloy layer.
9. manufacture a method for the array substrate being used for liquid-crystal display, comprising:
A) on substrate, form the step of grid;
B) on the described substrate comprising described grid, form the step of gate insulator;
C) on described gate insulator, form the step of semiconductor layer;
D) on described semiconductor layer, form the step of source/drain; And
E) step with the described pixel electrode be connected that drains is formed;
Wherein, step a), d) or e) comprises formation metal level and uses etchant according to any one of claim 1 to 8 to etch described metal level to form the step of electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0080591 | 2014-06-30 | ||
| KR1020140080591A KR102204228B1 (en) | 2014-06-30 | 2014-06-30 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
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| CN105274527A true CN105274527A (en) | 2016-01-27 |
| CN105274527B CN105274527B (en) | 2018-11-20 |
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|---|---|
| KR (1) | KR102204228B1 (en) |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052907A (en) * | 2010-07-30 | 2013-04-17 | 东友Fine-Chem股份有限公司 | Method for preparing array substrate for liquid crystal display device |
| CN103668206A (en) * | 2012-09-19 | 2014-03-26 | 东友精细化工有限公司 | Etching solution combination for copper/titanium layers |
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| KR100505328B1 (en) * | 2002-12-12 | 2005-07-29 | 엘지.필립스 엘시디 주식회사 | ETCHING SOLUTIONS AND METHOD TO REMOVE MOLYBDENUM RESIDUE FOR Cu MOLYBDENUM MULTILAYERS |
| KR101495683B1 (en) * | 2008-09-26 | 2015-02-26 | 솔브레인 주식회사 | Cu or Cu/Mo or Cu/Mo alloy electrode etching liquid in Liquid Crystal Display system |
| KR101529733B1 (en) * | 2009-02-06 | 2015-06-19 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR101674680B1 (en) | 2009-09-21 | 2016-11-10 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| TWI510848B (en) * | 2010-08-02 | 2015-12-01 | Dongwoo Fine Chem Co Ltd | Etchant composistion of etching a commper-based metal layer and method of fabricating an array substrate for a liquid crystal display |
| KR20120044630A (en) | 2010-10-28 | 2012-05-08 | 주식회사 동진쎄미켐 | Etchant composition for copper-containing metal film and etching method using the same |
| KR101873583B1 (en) | 2011-01-12 | 2018-07-03 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
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- 2014-06-30 KR KR1020140080591A patent/KR102204228B1/en active IP Right Grant
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052907A (en) * | 2010-07-30 | 2013-04-17 | 东友Fine-Chem股份有限公司 | Method for preparing array substrate for liquid crystal display device |
| CN103668206A (en) * | 2012-09-19 | 2014-03-26 | 东友精细化工有限公司 | Etching solution combination for copper/titanium layers |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105274527B (en) | 2018-11-20 |
| TW201600643A (en) | 2016-01-01 |
| KR20160001986A (en) | 2016-01-07 |
| KR102204228B1 (en) | 2021-01-18 |
| TWI662156B (en) | 2019-06-11 |
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